JP2022531362A5 - - Google Patents

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Publication number
JP2022531362A5
JP2022531362A5 JP2021564871A JP2021564871A JP2022531362A5 JP 2022531362 A5 JP2022531362 A5 JP 2022531362A5 JP 2021564871 A JP2021564871 A JP 2021564871A JP 2021564871 A JP2021564871 A JP 2021564871A JP 2022531362 A5 JP2022531362 A5 JP 2022531362A5
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JP
Japan
Prior art keywords
substrate
back side
film layer
approximately
factory interface
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Application number
JP2021564871A
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English (en)
Japanese (ja)
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JP2022531362A (ja
JP7316379B2 (ja
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Priority claimed from PCT/US2020/027994 external-priority patent/WO2020226855A1/en
Publication of JP2022531362A publication Critical patent/JP2022531362A/ja
Publication of JP2022531362A5 publication Critical patent/JP2022531362A5/ja
Priority to JP2023116015A priority Critical patent/JP7635306B2/ja
Application granted granted Critical
Publication of JP7316379B2 publication Critical patent/JP7316379B2/ja
Active legal-status Critical Current
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JP2021564871A 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置 Active JP7316379B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023116015A JP7635306B2 (ja) 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962843201P 2019-05-03 2019-05-03
US62/843,201 2019-05-03
PCT/US2020/027994 WO2020226855A1 (en) 2019-05-03 2020-04-13 Method and apparatus for backside physical vapor deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023116015A Division JP7635306B2 (ja) 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置

Publications (3)

Publication Number Publication Date
JP2022531362A JP2022531362A (ja) 2022-07-06
JP2022531362A5 true JP2022531362A5 (cg-RX-API-DMAC7.html) 2023-03-14
JP7316379B2 JP7316379B2 (ja) 2023-07-27

Family

ID=73016738

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Application Number Title Priority Date Filing Date
JP2021564871A Active JP7316379B2 (ja) 2019-05-03 2020-04-13 裏側物理的気相堆積の方法及び装置
JP2023116015A Active JP7635306B2 (ja) 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置

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JP2023116015A Active JP7635306B2 (ja) 2019-05-03 2023-07-14 裏側物理的気相堆積の方法及び装置

Country Status (4)

Country Link
US (3) US11469096B2 (cg-RX-API-DMAC7.html)
JP (2) JP7316379B2 (cg-RX-API-DMAC7.html)
KR (2) KR20250010145A (cg-RX-API-DMAC7.html)
WO (1) WO2020226855A1 (cg-RX-API-DMAC7.html)

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KR20250010145A (ko) * 2019-05-03 2025-01-20 어플라이드 머티어리얼스, 인코포레이티드 후면 물리 기상 증착을 위한 방법 및 장치
WO2020251696A1 (en) * 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US11860528B2 (en) * 2020-12-21 2024-01-02 Applied Materials, Inc. Multi-chamber substrate processing platform
CN117223088A (zh) * 2021-04-27 2023-12-12 应用材料公司 用于半导体处理的应力与重叠管理
WO2023102376A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Deposition of high compressive stress thermally stable nitride film
TW202348822A (zh) * 2022-02-14 2023-12-16 美商應用材料股份有限公司 用於製造pvd鈣鈦礦膜的設備及方法
TWI826001B (zh) * 2022-09-19 2023-12-11 汎銓科技股份有限公司 一種減少缺陷的鍍膜方法
KR102833899B1 (ko) * 2023-03-09 2025-07-15 에스케이실트론 주식회사 웨이퍼 리프트 핀
CN116254513A (zh) * 2023-04-12 2023-06-13 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种用于超薄膜制备的团簇束流沉积系统
CN118109804B (zh) * 2024-04-19 2024-07-16 上海陛通半导体能源科技股份有限公司 背面镀膜工艺腔室及化学气相沉积设备
CN119710592B (zh) * 2024-12-24 2025-07-18 江苏乐萌精密科技有限公司 一种基于磁场分布设计的双面同步成膜的高效镀膜机

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JPS6218881A (ja) * 1985-07-18 1987-01-27 Fuji Photo Film Co Ltd フイ−ルド／フレ−ム変換方式
JP3343620B2 (ja) * 1992-04-09 2002-11-11 アネルバ株式会社 マグネトロンスパッタリングによる薄膜形成方法および装置
US6620298B1 (en) * 1999-04-23 2003-09-16 Matsushita Electric Industrial Co., Ltd. Magnetron sputtering method and apparatus
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US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
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JP2010037656A (ja) 2008-08-01 2010-02-18 Fuji Electric Holdings Co Ltd スパッタリング装置
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US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
JP6596634B2 (ja) 2014-10-23 2019-10-30 アドバンストマテリアルテクノロジーズ株式会社 強誘電体セラミックス、電子部品及び強誘電体セラミックスの製造方法
KR20190088493A (ko) * 2016-11-18 2019-07-26 어플라이드 머티어리얼스, 인코포레이티드 헤테로접합 태양 전지 형성을 위한 교환 및 플립 챔버 설계
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US11572618B2 (en) * 2019-08-27 2023-02-07 Applied Materials, Inc. Method and chamber for backside physical vapor deposition

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