JP2022525086A5 - - Google Patents

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Publication number
JP2022525086A5
JP2022525086A5 JP2021554600A JP2021554600A JP2022525086A5 JP 2022525086 A5 JP2022525086 A5 JP 2022525086A5 JP 2021554600 A JP2021554600 A JP 2021554600A JP 2021554600 A JP2021554600 A JP 2021554600A JP 2022525086 A5 JP2022525086 A5 JP 2022525086A5
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JP
Japan
Prior art keywords
substrate
distance
station
base
layer
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JP2021554600A
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English (en)
Japanese (ja)
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JP7671696B2 (ja
JP2022525086A (ja
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Priority claimed from PCT/US2020/021323 external-priority patent/WO2020185539A1/en
Publication of JP2022525086A publication Critical patent/JP2022525086A/ja
Publication of JP2022525086A5 publication Critical patent/JP2022525086A5/ja
Priority to JP2025069205A priority Critical patent/JP2025111580A/ja
Application granted granted Critical
Publication of JP7671696B2 publication Critical patent/JP7671696B2/ja
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JP2021554600A 2019-03-12 2020-03-06 独立して調節可能な台座を用いるマルチステーション半導体処理 Active JP7671696B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025069205A JP2025111580A (ja) 2019-03-12 2025-04-21 独立して調節可能な台座を用いるマルチステーション半導体処理

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962817332P 2019-03-12 2019-03-12
US62/817,332 2019-03-12
PCT/US2020/021323 WO2020185539A1 (en) 2019-03-12 2020-03-06 Multi-station semiconductor processing with independently adjustable pedestals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025069205A Division JP2025111580A (ja) 2019-03-12 2025-04-21 独立して調節可能な台座を用いるマルチステーション半導体処理

Publications (3)

Publication Number Publication Date
JP2022525086A JP2022525086A (ja) 2022-05-11
JP2022525086A5 true JP2022525086A5 (https=) 2023-03-13
JP7671696B2 JP7671696B2 (ja) 2025-05-02

Family

ID=72427072

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021554600A Active JP7671696B2 (ja) 2019-03-12 2020-03-06 独立して調節可能な台座を用いるマルチステーション半導体処理
JP2025069205A Pending JP2025111580A (ja) 2019-03-12 2025-04-21 独立して調節可能な台座を用いるマルチステーション半導体処理

Family Applications After (1)

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JP2025069205A Pending JP2025111580A (ja) 2019-03-12 2025-04-21 独立して調節可能な台座を用いるマルチステーション半導体処理

Country Status (7)

Country Link
US (1) US12421602B2 (https=)
JP (2) JP7671696B2 (https=)
KR (1) KR102857746B1 (https=)
CN (1) CN113811637A (https=)
SG (1) SG11202109959TA (https=)
TW (2) TW202507063A (https=)
WO (1) WO2020185539A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170314129A1 (en) 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
US12270103B2 (en) 2019-11-08 2025-04-08 Lam Research Corporation Plasma-enhanced atomic layer deposition with radio-frequency power ramping
US12217968B2 (en) * 2020-04-06 2025-02-04 California Institute Of Technology Atomic layer etching for smoothing of arbitrary surfaces
US11864472B2 (en) 2020-07-10 2024-01-02 California Institute Of Technology Methods and systems for atomic layer etching and atomic layer deposition
KR20240073974A (ko) * 2021-10-07 2024-05-27 램 리써치 코포레이션 멀티-스테이션 프로세싱 챔버 컴포넌트들의 선택적인 제어

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7008484B2 (en) 2002-05-06 2006-03-07 Applied Materials Inc. Method and apparatus for deposition of low dielectric constant materials
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
CN100358097C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
US7968469B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7674394B2 (en) 2007-02-26 2010-03-09 Applied Materials, Inc. Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
US20080236490A1 (en) 2007-03-29 2008-10-02 Alexander Paterson Plasma reactor with an overhead inductive antenna and an overhead gas distribution showerhead
US9002514B2 (en) * 2007-11-30 2015-04-07 Novellus Systems, Inc. Wafer position correction with a dual, side-by-side wafer transfer robot
US20090206056A1 (en) 2008-02-14 2009-08-20 Songlin Xu Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8766240B2 (en) * 2010-09-21 2014-07-01 Universal Display Corporation Permeation barrier for encapsulation of devices and substrates
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP6045610B2 (ja) 2013-01-24 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9865501B2 (en) 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
US9490149B2 (en) 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
US9556514B2 (en) 2014-02-06 2017-01-31 Veeco Ald Inc. Spatial deposition of material using short-distance reciprocating motions
US9797042B2 (en) * 2014-05-15 2017-10-24 Lam Research Corporation Single ALD cycle thickness control in multi-station substrate deposition systems
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US20170314129A1 (en) 2016-04-29 2017-11-02 Lam Research Corporation Variable cycle and time rf activation method for film thickness matching in a multi-station deposition system
JP7017306B2 (ja) 2016-11-29 2022-02-08 株式会社日立ハイテク 真空処理装置
KR102369676B1 (ko) * 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
US12051630B2 (en) * 2018-02-23 2024-07-30 Lam Research Corporation RF current measurement in semiconductor processing tool

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