JP2022521531A5 - - Google Patents

Info

Publication number
JP2022521531A5
JP2022521531A5 JP2021549215A JP2021549215A JP2022521531A5 JP 2022521531 A5 JP2022521531 A5 JP 2022521531A5 JP 2021549215 A JP2021549215 A JP 2021549215A JP 2021549215 A JP2021549215 A JP 2021549215A JP 2022521531 A5 JP2022521531 A5 JP 2022521531A5
Authority
JP
Japan
Application number
JP2021549215A
Other languages
Japanese (ja)
Other versions
JPWO2020169702A5 (https=
JP2022521531A (ja
JP7610518B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2020/054421 external-priority patent/WO2020169702A1/en
Publication of JP2022521531A publication Critical patent/JP2022521531A/ja
Publication of JPWO2020169702A5 publication Critical patent/JPWO2020169702A5/ja
Publication of JP2022521531A5 publication Critical patent/JP2022521531A5/ja
Application granted granted Critical
Publication of JP7610518B2 publication Critical patent/JP7610518B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021549215A 2019-02-22 2020-02-20 改善された貯蔵寿命を有するハードマスク及び充填材料として有用な無機酸化物成分及びアルキニルオキシ置換スピンオン炭素成分を含むスピンオン組成物 Active JP7610518B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962809072P 2019-02-22 2019-02-22
US62/809,072 2019-02-22
PCT/EP2020/054421 WO2020169702A1 (en) 2019-02-22 2020-02-20 Spin-on compositions comprising an inorganic oxide component and an alkynyloxy substituted spin-on carbon component useful as hard masks and filling materials with improved shelf life

Publications (4)

Publication Number Publication Date
JP2022521531A JP2022521531A (ja) 2022-04-08
JPWO2020169702A5 JPWO2020169702A5 (https=) 2023-02-24
JP2022521531A5 true JP2022521531A5 (https=) 2023-02-24
JP7610518B2 JP7610518B2 (ja) 2025-01-08

Family

ID=69699858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021549215A Active JP7610518B2 (ja) 2019-02-22 2020-02-20 改善された貯蔵寿命を有するハードマスク及び充填材料として有用な無機酸化物成分及びアルキニルオキシ置換スピンオン炭素成分を含むスピンオン組成物

Country Status (8)

Country Link
US (1) US11767398B2 (https=)
EP (1) EP3928348B1 (https=)
JP (1) JP7610518B2 (https=)
KR (1) KR102843498B1 (https=)
CN (1) CN113412533A (https=)
SG (1) SG11202106923XA (https=)
TW (1) TWI833908B (https=)
WO (1) WO2020169702A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102907251B1 (ko) * 2022-05-03 2026-01-02 (주)휴넷플러스 유기중합체, 이를 포함하는 반도체 하드마스크 조성물 및 이를 이용한 패턴화 방법
JP7805883B2 (ja) 2022-07-08 2026-01-26 信越化学工業株式会社 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法
IL305619A (en) 2022-09-14 2024-04-01 Shinetsu Chemical Co Compound for forming a metal-containing layer, composition for forming a metal-containing layer, printing method, and semiconductor masking sensitizer
JP2024068637A (ja) * 2022-11-08 2024-05-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024089633A (ja) 2022-12-21 2024-07-03 信越化学工業株式会社 金属含有膜形成用重合体、金属含有膜形成用組成物、及びパターン形成方法
JP2024091495A (ja) * 2022-12-22 2024-07-04 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024097388A (ja) * 2023-01-06 2024-07-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP7802711B2 (ja) * 2023-01-06 2026-01-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
KR102795114B1 (ko) * 2023-02-14 2025-04-10 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
JP7802029B2 (ja) 2023-02-15 2026-01-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法
JP2024122656A (ja) * 2023-02-28 2024-09-09 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
EP4435516A1 (en) * 2023-03-16 2024-09-25 Shin-Etsu Chemical Co., Ltd. Method for forming resist underlayer film and patterning process
JP7839127B2 (ja) * 2023-06-07 2026-04-01 信越化学工業株式会社 金属含有膜形成用組成物及びパターン形成方法
JP2025032887A (ja) 2023-08-28 2025-03-12 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2025032875A (ja) 2023-08-28 2025-03-12 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2025099570A (ja) 2023-12-22 2025-07-03 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法
JP2025099887A (ja) 2023-12-22 2025-07-03 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法
JP2025101957A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法
JP2025102051A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
WO2012145330A1 (en) * 2011-04-18 2012-10-26 The University Of British Columbia Fluorene-9-bisphenol compounds and methods for their use
US9365510B2 (en) * 2012-04-16 2016-06-14 British Columbia Cancer Agency Branch Aziridine bisphenol ethers and related compounds and methods for their use
US9315636B2 (en) * 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9152051B2 (en) * 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9296922B2 (en) * 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9274426B2 (en) * 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
US9499698B2 (en) * 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
JP6641879B2 (ja) * 2015-03-03 2020-02-05 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法
US9958781B2 (en) * 2015-04-24 2018-05-01 Jsr Corporation Method for film formation, and pattern-forming method
JP6712188B2 (ja) * 2015-07-13 2020-06-17 信越化学工業株式会社 レジスト下層膜形成用組成物及びこれを用いたパターン形成方法
JP6625934B2 (ja) * 2015-07-14 2019-12-25 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及び化合物

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
JP2022521531A5 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
CL2025002820A1 (es) Interfaz radial y axial entre barra conductora y máquina de trabajo.
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021015500A2 (https=)
BR112023016292A2 (https=)
BR202021024548U2 (https=)
BR112023011539A2 (https=)
BR112023011610A2 (https=)
BR112023008976A2 (https=)
BR102021016375A2 (https=)
BR102021016200A2 (https=)
BR102021016176A2 (https=)
BR102021015566A2 (https=)
BR102021015450A8 (https=)
BR102021015247A2 (https=)