JP2022516752A - 誘導結合プラズマのための反復的コイル - Google Patents

誘導結合プラズマのための反復的コイル Download PDF

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Publication number
JP2022516752A
JP2022516752A JP2021539521A JP2021539521A JP2022516752A JP 2022516752 A JP2022516752 A JP 2022516752A JP 2021539521 A JP2021539521 A JP 2021539521A JP 2021539521 A JP2021539521 A JP 2021539521A JP 2022516752 A JP2022516752 A JP 2022516752A
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Japan
Prior art keywords
coil
coils
process chamber
chamber
parallel
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Pending
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JP2021539521A
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English (en)
Japanese (ja)
Inventor
チョン ジョン イェー，
アビジット カングデ，
ルーク ボーンカッター，
ルパンカール チョードゥリー，
ジェイ ディー．， ザ セカンド ピンソン，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2022516752A publication Critical patent/JP2022516752A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26—Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2021539521A 2019-01-08 2019-10-28 誘導結合プラズマのための反復的コイル Pending JP2022516752A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN201941000851 2019-01-08
IN201941000851 2019-01-08
PCT/US2019/058364 WO2020146034A1 (fr) 2019-01-08 2019-10-28 Bobines récursives pour plasmas couplés par induction

Publications (1)

Publication Number Publication Date
JP2022516752A true JP2022516752A (ja) 2022-03-02

Family

ID=71404430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021539521A Pending JP2022516752A (ja) 2019-01-08 2019-10-28 誘導結合プラズマのための反復的コイル

Country Status (7)

Country Link
US (1) US20200219698A1 (fr)
JP (1) JP2022516752A (fr)
KR (1) KR20210102467A (fr)
CN (1) CN113330533A (fr)
SG (1) SG11202107115VA (fr)
TW (1) TW202036661A (fr)
WO (1) WO2020146034A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102148350B1 (ko) * 2020-04-28 2020-08-26 에이피티씨 주식회사 구조 변형이 가능한 플라즈마 소스 코일 및 이의 조정 방법
JP7417569B2 (ja) * 2021-10-29 2024-01-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
JP2002525866A (ja) * 1998-09-22 2002-08-13 アプライド マテリアルズ インコーポレイテッド 内部誘導コイルアンテナ及び導電性チャンバ壁を有するｒｆプラズマエッチング反応器
JP2001052895A (ja) * 1999-08-04 2001-02-23 Shibaura Mechatronics Corp プラズマ発生装置及びこの装置を備えたプラズマ処理装置
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
KR101007822B1 (ko) * 2003-07-14 2011-01-13 주성엔지니어링(주) 혼합형 플라즈마 발생 장치
KR100545169B1 (ko) * 2003-09-03 2006-01-24 동부아남반도체 주식회사 반도체 제조 설비의 정전척 및 이를 이용한 웨이퍼 척킹방법
KR101038204B1 (ko) * 2004-02-25 2011-05-31 주성엔지니어링(주) 플라즈마 발생용 안테나
US20050264291A1 (en) * 2004-05-07 2005-12-01 Vaughan J T Multi-current elements for magnetic resonance radio frequency coils
WO2006049085A1 (fr) * 2004-11-04 2006-05-11 Ulvac, Inc. Appareil à mandrin électrostatique
CN101465189B (zh) * 2007-12-17 2012-03-07 北京北方微电子基地设备工艺研究中心有限责任公司 一种电感耦合线圈及等离子体装置
CN101640091B (zh) * 2008-07-28 2011-06-15 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及采用该电感耦合线圈的等离子体处理装置
US9313872B2 (en) * 2009-10-27 2016-04-12 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5592098B2 (ja) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5554099B2 (ja) * 2010-03-18 2014-07-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9111722B2 (en) * 2012-04-24 2015-08-18 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
WO2015013142A1 (fr) * 2013-07-22 2015-01-29 Applied Materials, Inc. Porte-substrat électrostatique pour applications de traitement à haute température
US20180323042A1 (en) * 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber

Also Published As

Publication number Publication date
SG11202107115VA (en) 2021-07-29
TW202036661A (zh) 2020-10-01
WO2020146034A1 (fr) 2020-07-16
US20200219698A1 (en) 2020-07-09
CN113330533A (zh) 2021-08-31
KR20210102467A (ko) 2021-08-19

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