JP2022510484A - 傾斜した格子を製造する方法 - Google Patents
傾斜した格子を製造する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 84
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- 238000005530 etching Methods 0.000 claims abstract description 55
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- G02B5/00—Optical elements other than lenses
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
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Abstract
Description
基板上に光学格子層を設けることと、
光学格子層の上にパターニングされたハードマスクを設けることを含む。
本方法は、光学格子層の一部分及びパターニングされたハードマスクの上だけにマスクを形成することをさらに含みうる。本方法は、光学格子層、パターニングされたハードマスク、及びマスクをエッチングすることによって、光学格子層に複数のトレンチを形成することであって、以下の格子特徴、即ち、トレンチの深さ及びトレンチの幅の少なくとも1つが、複数のトレンチのうちの1つ以上のトレンチの間で変わる、複数のトレンチを形成することをさらに含みうる。
Claims (15)
- 回折光学素子を形成する方法であって、
基板上に光学格子層を設けることと、
前記光学格子層の上にパターニングされたハードマスクを設けることと、
前記光学格子層の一部分及び前記パターニングされたハードマスクの上だけにマスクを形成することと、
前記光学格子層に複数のトレンチをエッチングして、光学格子を形成することであって、前記複数のトレンチの第1のトレンチの第1の深さは、前記複数のトレンチの第2のトレンチの第2の深さとは異なっている、光学格子を形成することと、
を含む、方法。 - 前記複数のトレンチの前記第1のトレンチの第1の幅は、前記複数のトレンチの前記第2のトレンチの第2の幅とは異なっている、請求項1に記載の方法。
- 前記光学格子層に前記複数のトレンチをエッチングする前に、前記マスクをパターニングすることをさらに含む、請求項1に記載の方法。
- 前記エッチングすることが、角度を付けたイオンエッチングを行うことを含み、前記角度を付けたイオンエッチングが、反応性イオンビームによって行われ、前記基板が、前記反応性イオンビームに対して走査方向に沿って走査される、請求項1に記載の方法。
- 前記パターニングされたハードマスクを、間隙によってそれぞれが互いに分離された複数のハードマスク要素として形成することをさらに含み、
前記複数のハードマスク要素のうち第1の部分集合が、前記複数のハードマスク要素のうち第2の部分集合の隣に存在し、前記複数のハードマスク要素の前記第1の部分集合のそれぞれが第1の幅を有し、前記複数のハードマスク要素の前記第2の部分集合のそれぞれが第2の幅を有し、前記第1の幅が前記第2の幅よりも大きい、請求項1に記載の方法。 - 前記マスクを、前記光学格子層の上面に対して2つ以上の高さを含むよう形成することをさらに含む、請求項5に記載の方法。
- 前記複数のハードマスク要素の前記第2の部分集合の上だけに前記マスクを形成することをさらに含む、請求項5に記載の方法。
- 前記複数のトレンチの前記第1のトレンチの前記第1の幅が、前記複数のトレンチの前記第2のトレンチの前記第2の幅とほぼ等しい、請求項5に記載の方法。
- 光学格子部品を形成する方法であって、
基板上に光学格子層を設けることと、
前記光学格子層の上にパターニングされたハードマスクを設けることと、
前記光学格子層の一部分及び前記パターニングされたハードマスクの上だけにマスクを形成することであって、前記マスクは、前記パターニングされたハードマスクよりもエッチング抵抗が低い、マスクを形成することと、
前記光学格子層に複数のトレンチをエッチングして、光学格子を形成することであって、トレンチの深さが、前記複数のトレンチのうちの1つ以上のトレンチの間で変わる、光学格子を形成すること
を含む方法。 - 前記エッチングすることが、角度を付けたイオンエッチングを行うことを含み、前記角度を付けたイオンエッチングが、前記光学格子層、前記パターニングされたハードマスク、及び前記マスクのそれぞれに適用される、請求項9に記載の方法。
- 前記光学格子層の前記一部分に形成された前記複数のトレンチの第1のトレンチが、第1の深さを有し、前記光学格子層の第2の部分に形成された前記複数のトレンチの第2のトレンチが、第2の深さを有し、前記第2の深さが、前記第1の深さより大きい、請求項9に記載の方法。
- 前記光学格子層に前記複数のトレンチをエッチングする前に、前記マスクをパターニングすることをさらに含む、請求項9に記載の方法。
- 前記パターニングされたハードマスクを、間隙によってそれぞれが互いに分離された複数のハードマスク要素として形成することをさらに含み、前記複数のハードマスク要素の第1のハードマスク要素の幅が、前記複数のハードマスク要素の第2のハードマスク要素の幅とは異なっている、請求項9に記載の方法。
- 前記複数のハードマスク要素のうち第1の部分集合を、前記複数のハードマスク要素のうち第2の部分集合の隣に形成することをさらに含み、前記複数のハードマスク要素の前記第1の部分集合のそれぞれが、第1の幅を有し、前記複数のハードマスク要素の前記第2の部分集合のそれぞれが、第2の幅を有し、前記第1の幅が前記第2の幅よりも大きく、前記複数のトレンチのそれぞれの幅がほぼ均一である、請求項13に記載の方法。
- 光学格子部品を形成する方法であって、
基板上に光学格子層を設けることと、
前記光学格子層の上にパターニングされたハードマスクを設けることと、
前記光学格子層の一部分及び前記パターニングされたハードマスクの上だけにマスクを形成することと、
前記光学格子層、前記パターニングされたハードマスク、及び前記マスクをエッチングすることによって、前記光学格子層に複数のトレンチを形成することであって、以下の格子特徴、即ち、トレンチの深さ及びトレンチの幅の少なくとも1つが、前記複数のトレンチのうちの1つ以上のトレンチの間で変わる、複数のトレンチを形成すること
を含む、方法。
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US16/297,981 US10690821B1 (en) | 2018-12-14 | 2019-03-11 | Methods of producing slanted gratings |
US16/297,981 | 2019-03-11 | ||
PCT/US2019/059059 WO2020123054A1 (en) | 2018-12-14 | 2019-10-31 | Methods of producing slanted gratings |
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EP3900027B1 (en) * | 2018-12-17 | 2024-05-22 | Applied Materials, Inc. | Methods for controlling etch depth by localized heating |
US11747639B2 (en) * | 2019-07-22 | 2023-09-05 | Lawrence Livermore National Security, Llc | Birefringent waveplate and method for forming a waveplate having a birefringent metasurface |
US10823888B1 (en) * | 2019-11-12 | 2020-11-03 | Applied Materials, Inc. | Methods of producing slanted gratings with variable etch depths |
US11456205B2 (en) | 2020-05-11 | 2022-09-27 | Applied Materials, Inc. | Methods for variable etch depths |
US20220035251A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Methods to fabricate 2d wedge and localized encapsulation for diffractive optics |
US20220082739A1 (en) * | 2020-09-17 | 2022-03-17 | Facebook Technologies, Llc | Techniques for manufacturing variable etch depth gratings using gray-tone lithography |
CN114167532A (zh) * | 2021-12-10 | 2022-03-11 | 谷东科技有限公司 | 衍射光栅波导及其制备方法和近眼显示设备 |
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KR20210092830A (ko) | 2021-07-26 |
US20200192009A1 (en) | 2020-06-18 |
TW202026675A (zh) | 2020-07-16 |
CN113167947A (zh) | 2021-07-23 |
WO2020123054A1 (en) | 2020-06-18 |
US10690821B1 (en) | 2020-06-23 |
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