CN105607371A - 阵列基板及其制作方法、显示面板 - Google Patents
阵列基板及其制作方法、显示面板 Download PDFInfo
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Abstract
本发明提供了一种阵列基板及其制作方法、显示面板,属于显示技术领域。所述阵列基板的像素区域包括多个周期性间隔排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。本发明的技术方案能够简化液晶显示器的制作工艺,降低液晶显示器的成本。
Description
技术领域
本发明涉及显示技术领域,特别是指一种阵列基板及其制作方法、显示面板。
背景技术
薄膜晶体管液晶显示器(ThinFilmTransistorLiquidCrystalDisplay,TFT-LCD)具有体积小、功耗低、无辐射等特点,在当前的平板显示器市场占据了主导地位。
彩色滤光片是液晶显示器中的重要组件,在液晶显示器中,背光模组发射的光经过彩色滤光片的处理,而呈现出彩色的画面。现有的液晶显示器多采用传统的有机颜料或者染料来制作彩色滤光片,制作彩色滤光片的方法通常是:首先在透明基板上制作黑色矩阵形成间隔;然后再分别制作红色滤色单元、绿色滤色单元和蓝色滤色单元,制作工艺复杂,导致液晶显示器的成本较高。
发明内容
本发明要解决的技术问题是提供一种阵列基板及其制作方法、显示面板,能够简化液晶显示器的制作工艺,降低液晶显示器的成本。
为解决上述技术问题,本发明的实施例提供技术方案如下:
一方面,提供一种阵列基板,所述阵列基板的像素区域包括多个周期性间隔排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
进一步地,所述滤光图形在所述阵列基板的亚像素区域内成矩阵排列。
进一步地,所述阵列基板上形成有多个不同颜色的亚像素区域,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
进一步地,所述滤光图形为圆形、椭圆形、正方形或正多边形,所述滤光图形的排列周期为所述滤光图形上两点之间的最大距离与相邻两滤光图形之间的间距的和。
进一步地,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,
在所述滤光图形为圆形时,所述红色亚像素区域的滤光图形的直径范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的直径范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的直径范围为95-115nm,周期范围为200-220nm;
在所述滤光图形为正方形时,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
进一步地,在所述滤光图形为圆形时,所述红色亚像素区域的滤光图形的直径为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的直径为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的直径为105nm,周期为210nm;
在所述滤光图形为正方形时,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
进一步地,所述滤光图形为长方形,所述滤光图形在所述阵列基板的亚像素区域内成行排列或成列排列。
进一步地,所述阵列基板上形成有多个不同颜色的亚像素区域,不同颜色亚像素区域的滤光图形的排列周期和宽度不同;亚像素区域对应颜色的波长越长,滤光图形的宽度越宽;亚像素区域对应颜色的波长越长,滤光图形的周期越宽,其中,所述滤光图形的周期为相邻两滤光图形相对距离最近的两侧边之间的距离与其中一个滤光图形的宽度之和。
进一步地,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
进一步地,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
进一步地,所述阵列基板上还形成有多个薄膜晶体管,所述薄膜晶体管的有源层与所述彩色滤光层为同层同材料设置。
进一步地,所述有源层和所述滤光图形采用多晶硅材料制备。
进一步地,所述阵列基板具体包括:
衬底基板;
位于所述衬底基板上的遮光层;
缓冲层;
位于所述缓冲层上的所述有源层和所述滤光图形;
栅绝缘层;
位于所述栅绝缘层上的栅极;
层间绝缘层;
位于所述层间绝缘层上的源极和漏极,所述源极和漏极通过贯穿所述栅绝缘层和层间绝缘层的过孔分别与所述有源层连接;
钝化层;
位于所述钝化层上的像素电极,所述像素电极通过贯穿所述钝化层的过孔与所述漏极连接。
本发明实施例还提供了一种显示面板,包括如上所述的阵列基板。
本发明实施例还提供了一种阵列基板的制作方法,所述制作方法包括:
在所述阵列基板的像素区域形成多个周期性排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
进一步地,所述阵列基板上还形成有多个薄膜晶体管,形成所述滤光图形包括:
通过一次构图工艺同时形成所述滤光图形和所述薄膜晶体管的有源层的图形。
进一步地,形成所述有源层的图形和所述滤光图形包括:
在基板上沉积缓冲层;
在所述缓冲层上沉积非晶硅层,并对所述非晶硅层进行退火或离子处理形成多晶硅层;
对所述多晶硅层进行构图形成所述有源层的图形和所述滤光图形。
进一步地,形成所述有源层的图形和所述滤光图形之后,所述方法还包括:
形成栅绝缘层;
在所述栅绝缘层上形成栅极;
形成层间绝缘层;
在所述层间绝缘层上形成源极和漏极,所述源极和漏极通过贯穿所述栅绝缘层和层间绝缘层的过孔分别与所述有源层连接;
形成钝化层;
在所述钝化层上形成像素电极,所述像素电极通过贯穿所述钝化层的过孔与所述漏极连接。
本发明的实施例具有以下有益效果:
上述方案中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
附图说明
图1为现有反射式液晶显示面板的结构示意图;
图2为本发明实施例反射式液晶显示面板的结构示意图;
图3-图5为本发明实施例滤光图形的示意图;
图6-图8为本发明实施例不同亚像素区域滤光图形的示意图;
图9为图8中沿AA’方向的剖面示意图;
图10为本发明实施例阵列基板的截面示意图。
附图标记
1、4衬底基板2反射电极3彩色滤光片5偏光片
6不对称前方散射膜7像素区域8滤光图形9栅极
10栅绝缘层11有源层12层间绝缘层13源极
14漏极15钝化层16像素电极17遮光层18缓冲层
具体实施方式
为使本发明的实施例要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。
本发明的实施例针对现有技术中彩色滤光片制作工艺复杂,导致液晶显示器的成本较高的问题,提供一种阵列基板及其制作方法、显示面板,能够简化液晶显示器的制作工艺,降低液晶显示器的成本。
实施例一
本实施例提供一种阵列基板,所述阵列基板的像素区域包括多个周期性间隔排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
具体地,所述滤光图形可以为圆形、椭圆形、正方形或正多边形,所述滤光图形的排列周期为所述滤光图形上两点之间的最大距离与相邻两滤光图形之间的间距的和。
进一步地,所述阵列基板上形成有多个不同颜色的亚像素区域,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
实施例二
本实施例提供一种阵列基板,如图2所示,所述阵列基板的像素区域7包括多个周期性排列的滤光图形8,如图3所示,所述滤光图形为圆形,所述滤光图形在所述阵列基板的亚像素区域内成矩阵排列,用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同,所述滤光图形的排列周期为相邻两滤光图形之间最小距离与其中一个滤光图形的直径之和。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
进一步地,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,所述红色亚像素区域的滤光图形的直径范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的直径范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的直径范围为95-115nm,周期范围为200-220nm。
优选实施例中,所述红色亚像素区域的滤光图形的直径为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的直径为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的直径为105nm,周期为210nm。
本实施例中,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
实施例三
本实施例提供一种阵列基板,如图2所示,所述阵列基板的像素区域7包括多个周期性排列的滤光图形8,如图4所示,所述滤光图形为正方形,所述滤光图形在所述阵列基板的亚像素区域内成矩阵排列,用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同,所述滤光图形的周期为相邻两滤光图形相对两侧边之间的距离与滤光图形的宽度之和。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
进一步地,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,如图8和图9所示,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;如图6所示,所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;如图7所示,所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
优选实施例中,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
本实施例中,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
实施例四
本实施例提供一种阵列基板,如图2所示,所述阵列基板的像素区域7包括多个周期性排列的滤光图形8,如图5所示,所述滤光图形为长方形,所述滤光图形在所述阵列基板的亚像素区域内成行排列或成列排列,用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同,所述滤光图形的周期为相邻两滤光图形相对两侧边之间的距离与滤光图形的宽度之和。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
进一步地,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
优选实施例中,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
本实施例中,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
实施例五
本实施例提供一种阵列基板,如图2所示,所述阵列基板的像素区域7包括多个周期性排列的滤光图形8,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同,所述滤光图形的周期为相邻两滤光图形相对两侧边之间的距离与滤光图形的宽度之和。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
进一步地,所述阵列基板上还形成有多个薄膜晶体管,所述薄膜晶体管的有源层与所述彩色滤光层为同层同材料设置,这样有源层和彩色滤光层可以通过同一次构图工艺制作,能够简化阵列基板的制作工艺,降低阵列基板的成本。优选地,所述有源层和所述滤光图形采用多晶硅材料制备。
如图10所示,本实施例的阵列基板具体包括:
衬底基板1,衬底基板1可以为玻璃基板或石英基板;
位于衬底基板1上的遮光层17,遮光层17可以采用金属层制成,对应有源层11设置;
覆盖遮光层17的缓冲层18;
位于缓冲层18上的有源层11和滤光图形8,有源层11和滤光图形8可以采用多晶硅制成;
覆盖有源层11和滤光图形8的栅绝缘层10;
位于栅绝缘层10上的栅极9和栅线的图形;
覆盖栅极9和栅线的层间绝缘层12;
位于层间绝缘层12上的源极13和漏极14,源极13和漏极14通过贯穿栅绝缘层10和层间绝缘层12的过孔分别与有源层11连接;
覆盖源极13和漏极14的钝化层15;
位于钝化层15上的像素电极16,像素电极16采用透明导电层制成,透明导电层可以为ITO,IZO或AZO,像素电极16通过贯穿钝化层15的过孔与漏极14连接。
实施例六
本实施例提供了一种显示面板,包括如上所述的阵列基板。
实施例七
本实施例提供了一种阵列基板的制作方法,所述制作方法包括:
在所述阵列基板的像素区域形成多个周期性排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
本实施例中,周期性排列的滤光图形能够对光线进行滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,本发明的技术方案不用再通过多个制作工艺来分别制备不同颜色的彩色滤光层,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;同时相比现有的彩色滤光层,能够有效提高滤光效率。
进一步地,所述阵列基板上还形成有多个薄膜晶体管,形成所述滤光图形包括:
通过一次构图工艺同时形成所述滤光图形和所述薄膜晶体管的有源层的图形。
进一步地,形成所述有源层的图形和所述滤光图形包括:
在基板上沉积缓冲层;
在所述缓冲层上沉积非晶硅层,并对所述非晶硅层进行退火或离子处理形成多晶硅层;
对所述多晶硅层进行构图形成所述有源层的图形和所述滤光图形。
进一步地,形成所述有源层的图形和所述滤光图形之后,所述方法还包括:
形成栅绝缘层;
在所述栅绝缘层上形成栅极;
形成层间绝缘层;
在所述层间绝缘层上形成源极和漏极,所述源极和漏极通过贯穿所述栅绝缘层和层间绝缘层的过孔分别与所述有源层连接;
形成钝化层;
在所述钝化层上形成像素电极,所述像素电极通过贯穿所述钝化层的过孔与所述漏极连接。
实施例八
图1为现有反射式液晶显示面板的结构示意图,如图1所示,现有的反射式液晶显示面板包括:相对设置的衬底基板1和4,位于衬底基板1和4之间的液晶盒,在衬底基板4上贴附有偏光片5和不对称前方散射膜6;在衬底基板4上还形成有彩色滤光片3,现有的液晶显示器多采用传统的有机颜料或者染料来制作彩色滤光片,制作彩色滤光片的方法通常是:首先在透明基板上制作黑色矩阵形成间隔;然后再分别制作红色滤色单元、绿色滤色单元和蓝色滤色单元,制作工艺复杂,导致液晶显示器的成本较高。
为了解决上述问题,本发明实施例提供了一种显示面板,如图2所示,本实施例的显示面板包括:相对设置的衬底基板1和4,位于衬底基板1和4之间的液晶盒,在衬底基板4上贴附有偏光片5和不对称前方散射膜6;在衬底基板1上形成有滤光图形8。
如图5所示,在本实施例的阵列基板中,每一亚像素区域内形成有多个长方形的滤光图形,多个滤光图形在亚像素区域内周期性排列,滤光图形的排列周期P为相邻两滤光图形之间的间隔与滤光图形的宽度D之和。其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同,不同颜色的亚像素区域对应的滤光图形的宽度不同。外界的环境光入射到滤光图形周期性纳米阵列表面时发生反射,对于特定周期的滤光图形阵列只对特定波长的光引起反射增强现象,而其他波长的光则发生吸收,其能量被耗散,从而使得滤光图形能够对来自前置光源的光线进行反射滤光。
具体地,阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,每一种颜色的亚像素区域对应的滤光图形具有相同的D值和相同的P值,当有入射光照射在周期性排列的滤光图形表面时,反射同一种颜色的光,因此此亚像素区域显示单一颜色,例如红色;同样另外两个亚像素区域采用绿色和蓝色对应的D值和P值的周期阵列,则分别反射显示绿色和蓝色。
同样地,在阵列基板上形成有黄色亚像素区域、品红色亚像素区域和青色亚像素区域时,每一种颜色的亚像素区域对应的滤光图形具有相同的D值和相同的P值,当有入射光照射在周期性排列的滤光图形表面时,反射同一种颜色的光,因此此亚像素区域显示单一颜色,例如品红色;同样另外两个亚像素区域采用黄色和青色对应的D值和P值的周期阵列,则分别反射显示黄色和青色。
进一步地,如图10所示,阵列基板上还形成有多个薄膜晶体管,阵列基板包括形成在衬底基板1上的栅极9,栅绝缘层10,有源层11,层间绝缘层12、源极13和漏极14,钝化层15,位于钝化层15上的像素电极16,其中,每一亚像素区域内的多个滤光图形8均与对应的薄膜晶体管的有源层11同层同材料设置,这样滤光图形8可以与有源层11通过一次构图工艺同时形成,进一步简化阵列基板的制作工艺,降低阵列基板的成本。
本实施例的阵列基板的制作方法具体包括以下步骤:
1、在衬底基板1上进行金属层的沉积,通过构图工艺形成遮光层17的图形;
2、在完成步骤1的衬底基板1上形成缓冲层18,在缓冲层18上进行非晶硅层的沉积,并经退火形成多晶硅层,通过构图工艺形成有源层11和滤光图形8的图形;
3、在完成步骤2的衬底基板1上形成栅绝缘层10,在栅绝缘层10上沉积栅金属层,通过构图工艺形成栅极9和栅线的图形,并以栅极9为掩膜,对有源层11进行相应的N型和P型掺杂;
4、在完成步骤3的衬底基板1上形成层间绝缘层12,在层间绝缘层12上进行源漏金属层的沉积,通过构图工艺形成数据线、源极13和漏极14;
5、在完成步骤4的衬底基板1上进行钝化层15的沉积,并形成包括有过孔的钝化层15的图形;
6、在完成步骤5的衬底基板1上沉积透明导电层,通过构图工艺形成像素电极16的图形,透明导电层可以为ITO,IZO或AZO,像素电极16通过过孔与漏极14连接。
本实施例中,周期性排列的滤光图形能够对来自前置光源的光线进行反射滤光,通过设计不同周期和间隔的滤光图形能够过滤出不同的颜色,使得滤光图形能够起到彩色滤光层的作用,不用再通过多个制作工艺来分别制备彩色滤光片,能够简化液晶显示器的制作工艺,降低液晶显示器的成本;滤光图形可以与有源层通过一次构图工艺形成,能够进一步简化阵列基板的制作工艺,降低阵列基板的成本。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明所述原理的前提下,还可以作出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (18)
1.一种阵列基板,其特征在于,所述阵列基板的像素区域包括多个周期性间隔排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
2.根据权利要求1所述的阵列基板,其特征在于,所述滤光图形在所述阵列基板的亚像素区域内成矩阵排列。
3.根据权利要求2所述的阵列基板,其特征在于,所述阵列基板上形成有多个不同颜色的亚像素区域,不同颜色亚像素区域的滤光图形的排列周期和尺寸不同;亚像素区域对应颜色的波长越长,滤光图形的尺寸越大;亚像素区域对应颜色的波长越长,滤光图形的排列周期越宽。
4.根据权利要求3所述的阵列基板,其特征在于,所述滤光图形为圆形、椭圆形、正方形或正多边形,所述滤光图形的排列周期为所述滤光图形上两点之间的最大距离与相邻两滤光图形之间的间距的和。
5.根据权利要求4所述的阵列基板,其特征在于,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,
在所述滤光图形为圆形时,所述红色亚像素区域的滤光图形的直径范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的直径范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的直径范围为95-115nm,周期范围为200-220nm;
在所述滤光图形为正方形时,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
6.根据权利要求5所述的阵列基板,其特征在于,
在所述滤光图形为圆形时,所述红色亚像素区域的滤光图形的直径为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的直径为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的直径为105nm,周期为210nm;在所述滤光图形为正方形时,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
7.根据权利要求1所述的阵列基板,其特征在于,所述滤光图形为长方形,所述滤光图形在所述阵列基板的亚像素区域内成行排列或成列排列。
8.根据权利要求7所述的阵列基板,其特征在于,所述阵列基板上形成有多个不同颜色的亚像素区域,不同颜色亚像素区域的滤光图形的排列周期和宽度不同;亚像素区域对应颜色的波长越长,滤光图形的宽度越宽;亚像素区域对应颜色的波长越长,滤光图形的周期越宽,其中,所述滤光图形的周期为相邻两滤光图形相对距离最近的两侧边之间的距离与其中一个滤光图形的宽度之和。
9.根据权利要求8所述的阵列基板,其特征在于,所述阵列基板上形成有红色亚像素区域、绿色亚像素区域和蓝色亚像素区域,所述红色亚像素区域的滤光图形的宽度范围为165-185nm,周期范围为340-360nm;所述绿色亚像素区域的滤光图形的宽度范围为110-130nm,周期范围为230-250nm;所述蓝色亚像素区域的滤光图形的宽度范围为95-115nm,周期范围为200-220nm。
10.根据权利要求9所述的阵列基板,其特征在于,所述红色亚像素区域的滤光图形的宽度为175nm,周期为350nm;所述绿色亚像素区域的滤光图形的宽度为120nm,周期为240nm;所述蓝色亚像素区域的滤光图形的宽度为105nm,周期为210nm。
11.根据权利要求1-10中任一项所述的阵列基板,其特征在于,所述阵列基板上还形成有多个薄膜晶体管,所述薄膜晶体管的有源层与所述彩色滤光层为同层同材料设置。
12.根据权利要求11所述的阵列基板,其特征在于,所述有源层和所述滤光图形采用多晶硅材料制备。
13.根据权利要求11所述的阵列基板,其特征在于,所述阵列基板具体包括:
衬底基板;
位于所述衬底基板上的遮光层;
缓冲层;
位于所述缓冲层上的所述有源层和所述滤光图形;
栅绝缘层;
位于所述栅绝缘层上的栅极;
层间绝缘层;
位于所述层间绝缘层上的源极和漏极,所述源极和漏极通过贯穿所述栅绝缘层和层间绝缘层的过孔分别与所述有源层连接;
钝化层;
位于所述钝化层上的像素电极,所述像素电极通过贯穿所述钝化层的过孔与所述漏极连接。
14.一种显示面板,其特征在于,包括如权利要求1-13中任一项所述的阵列基板。
15.一种阵列基板的制作方法,其特征在于,所述制作方法包括:
在所述阵列基板的像素区域形成多个周期性间隔排列的滤光图形,所述滤光图形用于形成彩色滤光层,其中,不同颜色的亚像素区域对应的滤光图形的排列周期不同。
16.根据权利要求15所述的阵列基板的制作方法,其特征在于,所述阵列基板上还形成有多个薄膜晶体管,形成所述滤光图形包括:
通过一次构图工艺同时形成所述滤光图形和所述薄膜晶体管的有源层的图形。
17.根据权利要求16所述的阵列基板的制作方法,其特征在于,形成所述有源层的图形和所述滤光图形包括:
在基板上沉积缓冲层;
在所述缓冲层上沉积非晶硅层,并对所述非晶硅层进行退火或离子处理形成多晶硅层;
对所述多晶硅层进行构图形成所述有源层的图形和所述滤光图形。
18.根据权利要求17所述的阵列基板的制作方法,其特征在于,形成所述有源层的图形和所述滤光图形之后,所述方法还包括:
形成栅绝缘层;
在所述栅绝缘层上形成栅极;
形成层间绝缘层;
在所述层间绝缘层上形成源极和漏极,所述源极和漏极通过贯穿所述栅绝缘层和层间绝缘层的过孔分别与所述有源层连接;
形成钝化层;
在所述钝化层上形成像素电极,所述像素电极通过贯穿所述钝化层的过孔与所述漏极连接。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105974657A (zh) * | 2016-07-26 | 2016-09-28 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN106547146A (zh) * | 2017-01-22 | 2017-03-29 | 京东方科技集团股份有限公司 | 像素结构及其制造方法、阵列基板和显示装置 |
CN106707624A (zh) * | 2017-03-10 | 2017-05-24 | 京东方科技集团股份有限公司 | 一种显示器件、背光源、显示装置 |
CN106773256A (zh) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | 彩膜基板、阵列基板及显示装置 |
WO2017161862A1 (en) * | 2016-03-25 | 2017-09-28 | Boe Technology Group Co., Ltd. | Array substrate, display panel and display apparatus having the same, and fabricating method thereof |
CN107761049A (zh) * | 2017-10-09 | 2018-03-06 | 深圳市华星光电半导体显示技术有限公司 | 蒸镀用uv前处理设备 |
WO2019023602A1 (en) * | 2017-07-28 | 2019-01-31 | Ohio University | POLYMER GLASSES AND FILMS WITH INTEGRATED COLLECTIONS OF METAL NANOCRYSTALS AND SEMICONDUCTORS THAT BLOCK INFRARED LIGHT |
CN109643657A (zh) * | 2017-06-22 | 2019-04-16 | 深圳市柔宇科技有限公司 | 阵列基板的制作设备及阵列基板的制作方法 |
US10446801B2 (en) | 2017-10-09 | 2019-10-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | UV pretreatment apparatus used in vacuum evaporation |
CN113540155A (zh) * | 2020-04-10 | 2021-10-22 | 华为技术有限公司 | 一种显示屏和电子设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10690821B1 (en) * | 2018-12-14 | 2020-06-23 | Applied Materials, Inc. | Methods of producing slanted gratings |
TWI694627B (zh) | 2019-03-25 | 2020-05-21 | 光磊科技股份有限公司 | 正面發射型發光二極體元件 |
CN111312913A (zh) * | 2020-02-20 | 2020-06-19 | 京东方科技集团股份有限公司 | 显示装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101256246A (zh) * | 2008-03-31 | 2008-09-03 | 浙江大学 | 基于金属表面等离子激元的微型阵列滤光片 |
US20090284696A1 (en) * | 2008-05-13 | 2009-11-19 | Samsung Electronics Co., Ltd. | Photonic crystal type color filter and reflective liquid crystal display device having the same |
US20110079782A1 (en) * | 2009-10-06 | 2011-04-07 | Hyun-Wuk Kim | Display substrate, method of manufacturing the display substrate, and display device having the display substrate |
CN102103222A (zh) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | 用于制造使用表面等离激元的滤色器和液晶显示器的方法 |
CN102257410A (zh) * | 2008-12-26 | 2011-11-23 | 佳能株式会社 | 光学元件、包含光学元件的图像传感器和包含图像传感器的图像拾取装置 |
CN103149616A (zh) * | 2013-01-31 | 2013-06-12 | 东北大学秦皇岛分校 | 反射型纳米柱表面等离子体滤光器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101308079B1 (ko) | 2012-05-08 | 2013-09-12 | 한국과학기술원 | 표면 플라즈몬 컬러필터 |
US10317581B2 (en) * | 2014-03-28 | 2019-06-11 | Ohio University | Compositions having a mixture of strongly plasmonic nanorods and exhibiting an extinction spectrum transparency window |
CN105607371A (zh) * | 2016-03-25 | 2016-05-25 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
-
2016
- 2016-03-25 CN CN201610178511.1A patent/CN105607371A/zh active Pending
- 2016-10-11 WO PCT/CN2016/101791 patent/WO2017161862A1/en active Application Filing
- 2016-10-11 US US15/520,554 patent/US10290684B2/en active Active
- 2016-10-11 EP EP16854605.9A patent/EP3440506B1/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101256246A (zh) * | 2008-03-31 | 2008-09-03 | 浙江大学 | 基于金属表面等离子激元的微型阵列滤光片 |
US20090284696A1 (en) * | 2008-05-13 | 2009-11-19 | Samsung Electronics Co., Ltd. | Photonic crystal type color filter and reflective liquid crystal display device having the same |
CN102257410A (zh) * | 2008-12-26 | 2011-11-23 | 佳能株式会社 | 光学元件、包含光学元件的图像传感器和包含图像传感器的图像拾取装置 |
US20110079782A1 (en) * | 2009-10-06 | 2011-04-07 | Hyun-Wuk Kim | Display substrate, method of manufacturing the display substrate, and display device having the display substrate |
CN102103222A (zh) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | 用于制造使用表面等离激元的滤色器和液晶显示器的方法 |
CN103149616A (zh) * | 2013-01-31 | 2013-06-12 | 东北大学秦皇岛分校 | 反射型纳米柱表面等离子体滤光器 |
Non-Patent Citations (2)
Title |
---|
叶志镇等: "《半导体薄膜技术与物理 第2版》", 31 December 2014, 浙江大学出版社 * |
王大巍: "《薄膜晶体管液晶显示器件的制造、测试与技术发展》", 31 March 2007, 机械工业出版社 * |
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---|---|---|---|---|
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CN105974657A (zh) * | 2016-07-26 | 2016-09-28 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
US10573668B2 (en) | 2017-01-03 | 2020-02-25 | Boe Technology Group Co., Ltd. | Color filter substrate, array substrate, and display apparatus |
CN106773256A (zh) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | 彩膜基板、阵列基板及显示装置 |
US10488697B2 (en) | 2017-01-22 | 2019-11-26 | Boe Technology Group Co., Ltd. | Pixel structure and method of manufacturing the same, array substrate and display device |
CN106547146A (zh) * | 2017-01-22 | 2017-03-29 | 京东方科技集团股份有限公司 | 像素结构及其制造方法、阵列基板和显示装置 |
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WO2019023602A1 (en) * | 2017-07-28 | 2019-01-31 | Ohio University | POLYMER GLASSES AND FILMS WITH INTEGRATED COLLECTIONS OF METAL NANOCRYSTALS AND SEMICONDUCTORS THAT BLOCK INFRARED LIGHT |
CN107761049A (zh) * | 2017-10-09 | 2018-03-06 | 深圳市华星光电半导体显示技术有限公司 | 蒸镀用uv前处理设备 |
US10446801B2 (en) | 2017-10-09 | 2019-10-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | UV pretreatment apparatus used in vacuum evaporation |
CN113540155A (zh) * | 2020-04-10 | 2021-10-22 | 华为技术有限公司 | 一种显示屏和电子设备 |
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Also Published As
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EP3440506A4 (en) | 2019-11-20 |
EP3440506B1 (en) | 2020-12-30 |
WO2017161862A1 (en) | 2017-09-28 |
US20180083070A1 (en) | 2018-03-22 |
EP3440506A1 (en) | 2019-02-13 |
US10290684B2 (en) | 2019-05-14 |
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