TWI694627B - 正面發射型發光二極體元件 - Google Patents
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229920005591 polysilicon Polymers 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 16
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
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- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
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- 239000002184 metal Substances 0.000 description 3
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- 229920005989 resin Polymers 0.000 description 3
- 229910004143 HfON Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
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- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
一種正面發射型發光二極體元件，包括：一玻璃基板；一多晶矽層，形成於該玻璃基板的一第一表面，且該多晶矽層的表面包括周期性排列的複數個次波長結構；一白光發光層，覆蓋於該多晶矽層以及該些次波長結構；以及一透明導電層，覆蓋於該白光發光層上。
Description
本發明是有關於一種發光二極體(light-emitting diode，簡稱LED)，且特別是有關於一種正面發射型(top emitting)發光二極體元件。
請參照第1圖，其所繪示為習知正面發射型有機發光二極體(organic light-emitting diode，簡稱OLED)元件示意圖。其揭露於2018年9月26日的SID期刊第555頁(Journal of SID 26/9,2018 555)。
於基板110上形成多個陽極(anode)，例如陽極(G)122、陽極(B)124、陽極(R)126。再者，在陽極(G)122、陽極(B)124、陽極(R)126上方，覆蓋厚度不同的電洞傳輸層(hole transport layer)130。接著，電洞傳輸層130上依序堆疊白光發光層(white emission layer)140、電子傳輸層(electron transport layer)150、陰極(cathode)160以及封裝層(encapsulation)170。之後，即形成OLED元件100。
此OLED元件100可由白光OLED的正面發射出紅光、綠光、藍光，以作為顯示器用途。利用電子束蒸鍍(e-beam evaporation)製程來控制OLED元件100的電洞傳輸層130厚度來形成RGB微腔結構(RGB microcavity)用以調整振盪長度(resonator length)。因此，利用微腔模式選擇(microcavity-based mode selection)，可在白光頻譜(white spectrum)中選擇出紅光、綠光、藍光。
請參照第2圖，其所繪示為習知另一正面發射型OLED元件示意圖。其揭露於2007年的Current Applied Physics 7期刊第300-304頁(Current Applied Physics 7(2007)300-304)。
於玻璃基板(Glass substrate)210依序形成銀反射層(reflective Ag)220、銦錫氧化膜(ITO)層230、白光發光層(white light emitting layer)240、鋁半透明層(semitransparent Al)250與銀半透明層(semitransparent Ag)260。之後，即形成OLED元件200。
OLED元件200係以銀反射層220來做為反射器(reflector)，以ITO層230作為調整層(adjusting layer)。再者，陰極是由鋁半透明層250與銀半透明層260所組成，白光發光層240由Alq：DCJTB/TBADN：TBPe/Alq：C545所組成。經由適當地調整ITO層230的厚度，可使得微腔結構的光學長度(optical
length)改變，並改變OLED元件200所發出的顏色。因此，可達成RBG三顏色(tricolor)的OLED元件200。
請參照第3圖，其所繪示為習知再一正面發射型OLED元件示意圖。其揭露於2009年5月11日的OPTICS EXPRESS期刊第17卷，編號10，第8005頁(11 May 2009/Vol.17.No.10/OPTICS EXPRESS 8005)。
於玻璃基板(Glass substrate)310上形成多個濾光器(color filter，CF)，例如紅光濾光器(CF-R)322、綠光濾光器(CF-G)324、藍光濾光器(CF-B)326，並形成保護樹脂層(protection resin layer)328覆蓋於該些濾光器。接著，於保護樹脂層328上形成分散式布拉格反射層(distributed Bragg reflecting layer，DBR)330。
再者，於於分散式布拉格反射層(DBR)330上形成不同厚度的多個ITO層，例如紅光用ITO層(ITO-R)342、綠光用ITO層(ITO-G)344、藍光用ITO層(ITO-B)346，用以形成不同的ITO微腔結構空間(ITO microcavity spaces)。並且，形成導電高分子層(PEDOT)348覆蓋於該些ITO層。之後，於導電高分子層(PEDOT)348上形成白光發光層350，並於白光發光層350形成金屬層360以形成OLED元件300。
基本上，OLED元件300中金屬層360作為陰極，ITO層除了做為陽極外，也形成不同的微腔結構空間
(microcavity spaces)，並使得OLED元件300發出RGB三個顏色。
當然，除了正面發射型OLED元件之外，也有底面發射型OLD元件(bottom emission OLED)。例如，揭露於2009年2月17日的SID期刊第151頁(Journal of SID 17/2,2009 151)的底面發射型OLD元件。
本發明的目的在於設計出一種正面發射型發光二極體元件。該發光二極體元件中具有微腔結構，可用來調整發光二極體的發射光的波長。
本發明提出一種正面發射型發光二極體元件，包括：一玻璃基板；一多晶矽層，形成於該玻璃基板的一第一表面，且該多晶矽層的表面包括周期性排列的複數個次波長結構；一白光發光層，覆蓋於該多晶矽層以及該些次波長結構；以及一透明導電層，覆蓋於該白光發光層上。
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下：
100、200、300:OLED元件
110:基板
122、124、126:陽極
130:電洞傳輸層
140、430:白光發光層
150:電子傳輸層
160:陰極
170:封裝層
210、310、410:玻璃基板
220:銀反射層
230:ITO層
240:發光層
250:鋁半透明層
260:銀半透明層
322、324、326:濾光器
328:保護樹脂層
330:分散式布拉格反射層
342、344、346:ITO層
348:導電高分子層
350:金屬層
400、600:LED元件
420:多晶矽層
422:次波長結構
432:第一位障層
434:量子井層
436:第二位障層
440:透明導電層
650:反射層
第1圖至第3圖為習知正面發射型OLED元件示意圖。
第4A圖至第4D圖為本發明正面發射型LED元件的製作流程示意圖。
第5A圖為白光LED的光譜圖。
第5B圖與第5C圖為LED元件的透明導電層厚度不同時，其波長的變化關係示意圖。
第6A圖為本發明正面發射型LED元件的第二實施例。
第6B圖為第一實施例LED元件與第二實施例LED元件的亮度比較。
請參照第4A圖至第4D圖，其所繪示為本發明正面發射型LED元件的製作流程示意圖。如第4A圖所示，在玻璃基板410上形成一多晶矽層(polysilicon layer)420。
如第4B圖所示，利用雷射光束週期性地照射於多晶矽層420，以進行雷射熱退火製程(laser annealing process)。由於自聚集效應(self-assembly effect)，於多晶矽層420形成周期性排列的次波長結構(sub-wavelength structure)422。其中，次波長結構422的排列周期約為300nm，高度約為30nm。另外，多晶矽層420可為n型多晶矽層或者p型多晶矽層。
如第4C圖所示，於多晶矽層420上形成一白光發光層430。根據本發明的實施例，白光發光層430為單一量子井/雙位障結構(single well/double barriers structure)。舉例來說，
白光發光層430為堆疊結構，其包括第一位障層(barrier layer)432、量子井層(quantum well layer)434與第二位障層436。此堆疊結構的材料可為氮氧化鋁鎵層/氮氧化銦鎵層/氮氧化鋁鎵層層(AlGaON/InGaON/AlGaON)、氮氧化鉿層/氮氧化鋁鎵層/氮氧化鉿層(HfON/AlGaON/HfON)、氮氧化鋁鎵層/氮氧化鋅層/氮氧化鋁鎵層(AlGaON/ZnON/AlGaON)。當然，白光發光層430也可以為多量子井/位障結構(multi-well/double barriers structure)，例如，氮氧化鋁鎵層/氮氧化銦鎵層/氮氧化鋁鎵層/氮氧化銦鎵層/氮氧化鋁鎵層(AlGaON/InGaON/AlGaON/InGaON/AlGaON)。
如第4D圖所示，於白光發光層430上形成一透明導電層440後，即完成本發明LED元件400。其中，透明導電層440可為銦錫氧化膜(ITO)層或者為銦鋅氧化膜(IZO)層。
根據本發明的實施例，多晶矽層420、白光發光層430、透明導電層440組成LED元件400的微腔結構。再者，多晶矽層420的厚度為d1、白光發光層430的厚度為d2、透明導電層440的厚度為d3。其中，多晶矽層420、白光發光層430、透明導電層440的總厚度t(t=d1+d2+d3)不大於2 λ/n，其中λ為介於500-600nm的波長，n為微腔結構對應500-600nm波長之折射係數。在較佳的情況下，可以設計總厚度t=λ/n或者t=λ/2n。
以下詳細介紹本發明LED元件的特性。請參照第5A圖，其所繪示為白光LED的光譜圖。其中，白光LED係將白光發光層(AlGaON/InGaON/AlGaON)形成於p型矽基板上的光譜圖。如第5A圖所示，當偏壓電流為45mA時，白光LED的亮度約為175(a.u)，波長λ約為581nm。再者，當偏壓電流為65mA時，白光LED的亮度約為225(a.u)，波長λ約為581nm。
請參照第5B圖與第5C圖，其所繪示為LED元件的透明導電層厚度分別為30nm與70nm時，其波長的變化關係示意圖。其中，二LED元件的白光發光層皆為10nm厚度之下，二LED元件的光譜中皆呈現數個峰值。
由第5B圖可知，LED元件的峰值波長會隨著銦錫氧化膜(ITO)層的厚度縮減而減小，並且輻射強度增加的現象。換言之，隨著微腔結構的厚度縮減，LED元件發出的光會偏藍化(blue shift with reduced microcavity thickness)。再者，波長470nm的藍光與波長500nm的綠光提升輻射強度約4倍，而波長590nm的橘光與波長650nm的紅光則無明顯地改變。上述的現象即為玻璃基板410上呈現微腔結構的光場增益(optical gain)。
相同地，如第5C圖所示，當銦錫氧化膜(ITO)層的厚度由70nm減少至30nm時，LED元件的最大峰值波長會由約590nm降低至約550nm。
為了增加LED元件的亮度，請參照第6A圖，其所繪示為本發明正面發射型LED元件的第二實施例。相較於第4D圖的第一實施例，第二實施例LED元件600更增加了一反射層410覆蓋於玻璃基板410的底部，用以增加LED元件600正面的發光強度。
請參照第6B圖，其所繪示為第一實施例LED元件與第二實施例LED元件的亮度比較。於二LED元件的銦錫氧化膜(ITO)層厚度為70nm，且偏壓電流為5mA下，具有反射層650的第二實施例LED元件600的發光強度相較於第一實施例LED元件400的發光強度，增加了約20%。
再者，由於多晶矽層420的折射係數n很大(約為n=4.0)，且遠大於錫氧化膜的折射係數(約為n=1.8)。因此，低階與基模的共振腔模態(fundamental and low order transverse mode)會集中在多晶矽層420。因此，設計厚度較薄的多晶矽層420(例如50nm~75nm)搭配50nm的銦錫氧化膜(ITO)層以及10nm的白光發光層430，將使得微腔結構侷限在基模(fundamental mode，m=1)的共振腔模態，並使得LED元件同時具備RGB三色分立之單基模白光源。
另外，搭配上多晶矽層420上周期性排列的次波長結構422，將可以提高LED元件400的出光效率。
由於LED元件400具備RGB三色分立之單基模白光，所以可以進一步在透明導電層440上進行蝕刻用以形成空間
頻率不同的多個光柵圖案(grating pattern)，其適用於RGB三色光。舉例來說，第一光柵適用於紅光，第二光柵適用於綠光，第三光柵適用於藍光。因此，紅光由第一光柵繞射出LED元件400，綠光由第二光柵繞射出LED元件400，藍光由第三光柵繞射出LED元件400。
由以上的說明可知，本發明提出一種正面發射型LED元件。利用改變透明導電層的厚度來調整微腔結構，並改變LED元件的峰值波長。另外，在多晶矽層420的厚度很薄(例如50nm~75nm)時，可使得LED元件同時具備RGB三色分立之單基模白光源，並利用光柵由LED元件的正面發射出RGB三色。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
400:LED元件
410:玻璃基板
420:多晶矽層
430:白光發光層
432:第一位障層
434:量子井層
436:第二位障層
440:透明導電層
Claims (12)
- 一種正面發射型發光二極體元件，包括：一玻璃基板；一多晶矽層，形成於該玻璃基板的一第一表面，且該多晶矽層的表面包括周期性排列的複數個次波長結構；一白光發光層，覆蓋於該多晶矽層以及該些次波長結構；以及一透明導電層，覆蓋於該白光發光層上。
- 申請專利範圍第1項所述之正面發射型發光二極體元件，其中該多晶矽層、該白光發光層與該透明導電層形成一微腔結構。
- 申請專利範圍第2項所述之正面發射型發光二極體元件，其中該微腔結構的總厚度不大於2 λ/n，其中λ為介於500-600nm的波長，且n為該微腔結構對應500-600nm波長之折射係數。
- 申請專利範圍第3項所述之正面發射型發光二極體元件，其中該多晶矽層、該白光發光層與該透明導電層形成的總厚度為λ/n，或者λ/2n。
- 申請專利範圍第1項所述之正面發射型發光二極體元件，其中利用一雷射光束週期性地照射於該多晶矽層以進行一雷射熱退火製程，並於該多晶矽層表面形成周期性排列的該些次波長結構。
- 如申請專利範圍第1項所述之正面發射型發光二極體元件，更包括一反射層，形成於該玻璃基板的一第二表面。
- 如申請專利範圍第1項所述之正面發射型發光二極體元件，更包括複數個光柵形成於該透明導電層的表面。
- 申請專利範圍第1項所述之正面發射型發光二極體元件，其中該一多晶矽層為一n型多晶矽層或者一p型多晶矽層。
- 如申請專利範圍第1項所述之正面發射型發光二極體元件，其中該白光發光層包括一堆疊結構，且該堆疊結構包括：一第一位障層、一量子井層與一第二位障層。
- 如申請專利範圍第9項所述之正面發射型發光二極體元件，其中該第一位障層、該量子井層與該第二位障層為一氮氧化鋁鎵層、一氮氧化銦鎵層與一氮氧化鋁鎵層。
- 如申請專利範圍第9項所述之正面發射型發光二極體元件，其中該第一位障層、該量子井層與該第二位障層為一氮氧化鉿層、一氮氧化鋁鎵層與一氮氧化鉿層。
- 如申請專利範圍第9項所述之正面發射型發光二極體元件，其中該第一位障層、該量子井層與該第二位障層為一氮氧化鋁鎵層、一氮氧化鋅層與一氮氧化鋁鎵層。
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| TW201027809A (en) * | 2008-11-21 | 2010-07-16 | Agency Science Tech & Res | A light emitting diode structure and a method of forming a light emitting diode structure |
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