JP2022171371A - Deposition method for metallic film - Google Patents

Deposition method for metallic film Download PDF

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JP2022171371A
JP2022171371A JP2021077971A JP2021077971A JP2022171371A JP 2022171371 A JP2022171371 A JP 2022171371A JP 2021077971 A JP2021077971 A JP 2021077971A JP 2021077971 A JP2021077971 A JP 2021077971A JP 2022171371 A JP2022171371 A JP 2022171371A
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film
plating solution
forming
porous
metal
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修 山下
Osamu Yamashita
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Toyota Motor Corp
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Abstract

To provide a deposition method for a metallic film that can prevent a plating solution from excluding from a site not contacting to a body to be coated in a porous film.SOLUTION: A porous film 50 is pinched by a placing table 16 in which an accommodation recess 16a that accommodates a body to be coated W is formed so that a surface to coated F of the body to be coated W is exposed, and a clipping member 12 in which a liquid holding hole 13 by which plating solution L is held is formed at a location facing a surface to be coated F of the body to be coated W placed on the placing table 16, so that the surface to be coated F contacts the porous film 50. By compressing the plating solution L holed in the liquid holding hole 13, the plating solution L is impregnated into the porous film 50. After stopping the compression of the plating solution L, a metallic film is deposited on to the surface to be coated F with the plating solution L impregnated into the porous film 50.SELECTED DRAWING: Figure 1A

Description

本発明は、被成膜体の被成膜面に金属皮膜を成膜する成膜方法に関する。 The present invention relates to a film forming method for forming a metal film on a film forming surface of a film forming object.

この種の技術として、たとえば、特許文献1には、陽極と、陽極と被成膜体の間に、被成膜体と接触可能に設けられた多孔質膜と、陽極と多孔質膜の間に溶液収容空間を画成する液収容室と、陽極と被成膜体の間に電圧を印加する電源部とを有し、多孔質膜がイオン交換性官能基を有さないポリオレフィン鎖から構成された成膜装置が開示されている。 As a technique of this kind, for example, Patent Document 1 discloses an anode, a porous film provided between the anode and a film-forming object, a porous film provided so as to be in contact with the film-forming object, and a and a power supply unit for applying a voltage between the anode and the film-forming body, and the porous membrane is composed of a polyolefin chain that does not have an ion-exchange functional group. A film forming apparatus is disclosed.

この成膜装置を用いて、液収容室にめっき液を収容し、多孔質膜と陰極が接触した状態で、陽極と被成膜体の間に電圧を印加することにより、被成膜体の被成膜領域に、金属皮膜を成膜することができる。 Using this film-forming apparatus, a plating solution is stored in the liquid storage chamber, and a voltage is applied between the anode and the film-forming body while the porous film and the cathode are in contact with each other. A metal coating can be deposited on the deposition region.

特開2020-97764号公報JP 2020-97764 A

しかしながら、特許文献1に示す成膜装置において、多孔質膜を用いた場合、液収容室内のめっき液を加圧した状態で、金属皮膜を成膜するため、被成膜体に接触しない多孔質膜の部分まで、めっき液が滲み出るおそれがある。 However, in the film forming apparatus disclosed in Patent Document 1, when a porous film is used, the metal film is formed while the plating solution in the liquid storage chamber is pressurized. There is a possibility that the plating solution will seep out to the film portion.

本発明は、このような点を鑑みてなされたものであり、その目的とするところは、多孔質膜のうち、被成膜体に接触していない箇所からも、めっき液が滲み出すことを抑えることができる金属皮膜の成膜方法を提供することにある。 The present invention has been made in view of these points, and an object of the present invention is to prevent the plating solution from seeping out even from the portions of the porous film that are not in contact with the substrate. The object of the present invention is to provide a method for forming a metal film that can suppress the amount of heat generated.

前記課題を鑑みて、本発明に係る金属皮膜の成膜方法は、金属イオンを含むめっき液が含浸された多孔質膜を、被成膜体に押し当てることにより、前記被成膜体の表面のうち、前記めっき液が接触した被成膜面に、前記金属イオンに由来する金属からなる金属皮膜を成膜する金属皮膜の成膜方法であって、前記被成膜体の前記被成膜面が露出するように、前記被成膜体を収容する収容凹部が形成された載置台と、前記載置台に載置された前記被成膜体の前記被成膜面と対向する位置に前記めっき液が保持された液保持孔が形成された挟持部材とで、前記多孔質膜に前記被成膜面が接触するように前記多孔質膜を挟み込む工程と、前記液保持孔に保持された前記めっき液を加圧して、前記めっき液を前記多孔質膜に含浸させる工程と、前記めっき液の加圧を停止し、前記多孔質膜に含浸させためっき液により、前記被成膜面に前記金属皮膜を成膜する工程と、を少なくとも含むことを特徴とする。 In view of the above-described problems, the method for forming a metal film according to the present invention provides a method for forming a metal film by pressing a porous film impregnated with a plating solution containing metal ions against a film-forming object, so that the surface of the film-forming object Among them, a method for forming a metal film comprising forming a metal film made of a metal derived from the metal ions on a surface to be formed that is in contact with the plating solution, the method comprising: A mounting table having a concave portion for housing the film-forming object so that the surface is exposed; a step of sandwiching the porous film with a sandwiching member having a liquid holding hole in which the plating solution is held so that the film-forming surface is in contact with the porous film; and a step of pressurizing the plating solution to impregnate the porous film with the plating solution; and a step of forming the metal film.

本発明によれば、多孔質膜を挟み込む工程において、被成膜体を収容した載置台と、挟持部材とで、多孔質膜に被成膜面が接触するように多孔質膜を挟み込む。これにより、被成膜面に接触していない多孔質膜の部分は、載置台の表面に接触して、シール材の如く機能するので、めっき液を加圧したとしても、多孔質膜からめっき液が滲み出すことを抑えることができる。 According to the present invention, in the step of sandwiching the porous film, the porous film is sandwiched between the mounting table accommodating the film-forming object and the holding member so that the film-forming surface is in contact with the porous film. As a result, the portion of the porous film that is not in contact with the surface to be formed is in contact with the surface of the mounting table and functions like a sealing material. It is possible to prevent the liquid from seeping out.

本発明の第1実施形態に係る金属皮膜の成膜方法における挟み込み工程を説明するための模式的断面図である。FIG. 4 is a schematic cross-sectional view for explaining a sandwiching step in the method for forming a metal film according to the first embodiment of the present invention; 図1Aに示す成膜装置において、金属皮膜の成膜方法における加圧工程と成膜工程とを説明するための模式的断面図である。1B is a schematic cross-sectional view for explaining a pressurizing step and a film forming step in a method for forming a metal film in the film forming apparatus shown in FIG. 1A; FIG. 図1Aに示す成膜装置において、金属皮膜の成膜装置における成膜工程を説明するための模式的断面図である。1B is a schematic cross-sectional view for explaining a film forming process in the film forming apparatus for forming a metal film in the film forming apparatus shown in FIG. 1A. FIG. 図1Aの変形例に係る金属皮膜の成膜装置の要部断面図である。FIG. 1B is a cross-sectional view of a main part of a metal film deposition apparatus according to a modification of FIG. 1A; 図2Aに示す成膜装置において、金属皮膜の成膜装置における加圧工程を説明するための模式的断面図である。2B is a schematic cross-sectional view for explaining a pressurizing step in the film forming apparatus for forming a metal film in the film forming apparatus shown in FIG. 2A. FIG. 図1Aの比較となる成膜方法を実施する成膜装置を説明するための模式的断面図である。FIG. 1B is a schematic cross-sectional view for explaining a film forming apparatus that implements a film forming method that is a comparison of FIG. 1A. 図3Aに示す成膜装置による成膜方法を説明するための模式的断面図である。3B is a schematic cross-sectional view for explaining a film forming method using the film forming apparatus shown in FIG. 3A; FIG. 図2Aの比較となる成膜方法を実施する成膜装置を説明するための模式的断面図である。FIG. 2B is a schematic cross-sectional view for explaining a film forming apparatus that performs a film forming method for comparison with FIG. 2A. 図4Aに示す成膜装置による成膜方法を説明するための模式的断面図である。4B is a schematic cross-sectional view for explaining a film forming method using the film forming apparatus shown in FIG. 4A; FIG.

以下に、本実施形態に係る金属皮膜の成膜方法を説明する。まず、図1A~図4Bを参照し、第1実施形態に係る金属皮膜の成膜方法に用いる成膜装置について説明する。 A method for forming a metal film according to this embodiment will be described below. First, with reference to FIGS. 1A to 4B, a film forming apparatus used in the method for forming a metal film according to the first embodiment will be described.

1.成膜装置について
図1に示すように、本実施形態に係る成膜装置1は、金属イオンを含むめっき液Lが含浸された多孔質膜50を、被成膜体Wに押し当てることにより、前記被成膜体Wの表面のうち、めっき液Lが接触した被成膜面Fに、前記金属イオンに由来する金属からなる金属皮膜を成膜する金属皮膜の成膜装置である。
1. 1. About Film Forming Apparatus As shown in FIG. 1, the film forming apparatus 1 according to the present embodiment presses a porous film 50 impregnated with a plating solution L containing metal ions against an object W to be film-formed. A metal film forming apparatus for forming a metal film made of a metal derived from the metal ions on a film forming surface F in contact with a plating solution L among the surfaces of the film forming object W.

図1Aに示すように成膜装置1は、被成膜体Wが載置される載置台16を備えており、載置台16には、被成膜体Wの被成膜面Fが露出するように、被成膜体Wを収容する収容凹部16aが形成されている。収容凹部16aには、ばねなどの付勢部材28が配置されており、付勢部材28は、多孔質膜50の方向に向かって被成膜体Wを付勢部材28している。 As shown in FIG. 1A, the film forming apparatus 1 includes a mounting table 16 on which the film formation target W is mounted. , a recess 16a for accommodating the object W to be deposited is formed. A biasing member 28 such as a spring is arranged in the housing recess 16 a , and the biasing member 28 biases the film-forming body W toward the porous film 50 .

本実施形態では、付勢部材28は、成膜時には、被成膜体Wが載置台16の表面と略面一となる(同じ面となるまで)圧縮変形するように設定されている。したがって、収容凹部16aの深さが、被成膜体Wの高さと圧縮変形した付勢部材28の和に一致するように、被成膜体Wの高さおよび付勢部材28のばね定数等が設定されている。 In this embodiment, the urging member 28 is set so that the object W to be film-formed is compressed and deformed so that it becomes substantially flush with the surface of the mounting table 16 (until it becomes the same surface) during film-forming. Therefore, the height of the object to be film-formed W, the spring constant of the urging member 28, etc. are adjusted so that the depth of the housing recess 16a matches the sum of the height of the object to be film-formed W and the compressively deformed urging member 28. is set.

成膜装置1は、装置本体10を備えており、装置本体10は、載置台16に対向する位置に多孔質膜50が取り付けられ、多孔質膜50でめっき液Lを封止するようにめっき液Lを収容する液収容室11が形成されている。載置台16は、装置本体10に対して、昇降自在となっている。載置台16の昇降は、リニアガイドなどの直動装置など、一般的に知られた装置により、実現可能である。 The film forming apparatus 1 includes an apparatus main body 10. The apparatus main body 10 has a porous film 50 attached at a position facing a mounting table 16, and performs plating so that the porous film 50 seals the plating solution L. A liquid containing chamber 11 for containing the liquid L is formed. The mounting table 16 can be raised and lowered with respect to the apparatus main body 10 . The lifting and lowering of the mounting table 16 can be realized by a generally known device such as a linear motion device such as a linear guide.

ここで、装置本体10の液収容室11には、めっき液Lが収容されており、たとえば、被成膜体Wを無電解めっきにより、金属皮膜を成膜する際には、めっき液Lとして無電解めっき液が収容されている。さらに、電解めっきにより、金属皮膜を成膜する場合には、液収容室11に、被成膜体Wと対向する位置に陽極(図示せず)が配置されている。被成膜体Wを陰極として、陽極と被成膜体W(陰極)に電源(図示せず)が接続されており、成膜時にこれらの間に電圧が印加される。 Here, the plating solution L is stored in the liquid storage chamber 11 of the apparatus main body 10. For example, when forming a metal film on the object W to be deposited by electroless plating, It contains an electroless plating solution. Furthermore, when forming a metal film by electroplating, an anode (not shown) is arranged in the liquid storage chamber 11 at a position facing the object W to be film-formed. A power supply (not shown) is connected to the anode and the film-forming object W (cathode) with the film-forming object W as a cathode, and a voltage is applied between them during film-forming.

さらに、本実施形態では、載置台16を囲うように、筐体18が配置されていてもよく、成膜時に筐体18の内部の空気を吸引することにより、筐体18内部を負圧にする吸引ポンプ30が接続されていてもよい。これにより、被成膜体Wに多孔質膜50を成膜することができる。液収容室11には、液収容室11に収容されためっき液Lを加圧する加圧ポンプ19が設けられている。 Furthermore, in the present embodiment, the housing 18 may be arranged so as to surround the mounting table 16, and the inside of the housing 18 is set to a negative pressure by sucking the air inside the housing 18 during film formation. A suction pump 30 may be connected. Thereby, the porous film 50 can be formed on the object W to be film-formed. The liquid storage chamber 11 is provided with a pressure pump 19 that pressurizes the plating solution L stored in the liquid storage chamber 11 .

多孔質膜50は、膜厚方向に、めっき液が透過する微細孔が形成された多孔質膜であり、20~100nm程度の孔径を有した膜であり、多孔構造(すなわちイオンクラスター構造)を有している。該多孔構造の細孔は非常に小さく、平均細孔径は例えば0.1μm以上100μm以下である。圧力を掛けることにより固体電解質膜中に無電解めっき液を含浸させることができる。電解めっきを行う場合には、多孔質膜50は、金属イオンが透過する固体電解質膜であり、例えば、デュポン社製のナフィオン(登録商標)等のフッ素系樹脂、炭化水素系樹脂、ポリアミック酸樹脂、旭硝子社製のセレミオン(CMV、CMD、CMFシリーズ)等のイオン交換機能を有する樹脂を挙げることができるが、特にこれらに限定されるものではない。多孔質膜50の膜厚は、10μm以上200μm以下であることが好ましく、20μm以上160μm以下であることがより好ましい。 The porous film 50 is a porous film in which fine pores through which the plating solution permeates are formed in the film thickness direction. have. The pores of the porous structure are very small, and the average pore diameter is, for example, 0.1 μm or more and 100 μm or less. By applying pressure, the solid electrolyte membrane can be impregnated with the electroless plating solution. When electroplating is performed, the porous membrane 50 is a solid electrolyte membrane through which metal ions permeate. , Selemion (CMV, CMD, CMF series) manufactured by Asahi Glass Co., Ltd., and other resins having an ion exchange function, but are not particularly limited to these. The film thickness of the porous membrane 50 is preferably 10 μm or more and 200 μm or less, more preferably 20 μm or more and 160 μm or less.

めっき液Lに含有される金属イオンは、例えば、銅イオン、ニッケルイオン、銀イオン、または金イオンなどの金属イオンである。無電解めっき液である場合には、無電解めっき液は、いわゆる置換型無電解めっき液であることが好ましい。無電解めっき液は、例えば、金属化合物及び錯化剤を含み、必要に応じて添加剤を含んでもよい。添加剤としては、例えば、pH緩衝剤又は安定剤等が挙げられる。めっき液が電解めっき液である場合には、硫酸または硝酸等により、金属皮膜となる金属がイオンの形態で溶解している電解液であることが好ましい。 Metal ions contained in the plating solution L are, for example, metal ions such as copper ions, nickel ions, silver ions, or gold ions. In the case of an electroless plating solution, the electroless plating solution is preferably a so-called substitution type electroless plating solution. The electroless plating solution contains, for example, a metal compound and a complexing agent, and may contain additives as necessary. Additives include, for example, pH buffers, stabilizers, and the like. When the plating solution is an electrolytic plating solution, it is preferably an electrolytic solution in which the metal that forms the metal film is dissolved in the form of ions with sulfuric acid, nitric acid, or the like.

本実施形態では、図1Bに示すように被成膜体Wの被成膜面Fは、陰極となるべく、導電性を有した表面であり、凹溝Rが形成されている。無電解めっきの場合には、被成膜面Fには、パラジウムなどの触媒が付されていてもよい。 In this embodiment, as shown in FIG. 1B, the film formation surface F of the film formation object W is a surface having conductivity so as to serve as a cathode, and grooves R are formed thereon. In the case of electroless plating, the film-forming surface F may be coated with a catalyst such as palladium.

本実施形態では、挟持部材12をさらに備えている。挟持部材12は、載置台16に載置された被成膜体Wの被成膜面Fと対向する位置に、液収容室11のめっき液Lが保持された液保持孔13が形成されている。 In this embodiment, a holding member 12 is further provided. The holding member 12 is formed with a liquid holding hole 13 in which the plating liquid L in the liquid storage chamber 11 is held at a position facing the film formation surface F of the film formation target W placed on the mounting table 16 . there is

本実施形態では、挟持部材12は、多孔質膜50と接触するように、多孔質膜50よりも液収容室11側に配置されている。液保持孔13は、液収容室11のめっき液Lが多孔質膜50に向かって通過しており、被成膜面Fに応じた大きさの開口を、多孔質膜50側に有しており、この開口を介して、めっき液Lが多孔質膜50に接触する。 In this embodiment, the holding member 12 is arranged closer to the liquid storage chamber 11 than the porous membrane 50 so as to be in contact with the porous membrane 50 . The plating solution L in the solution storage chamber 11 passes toward the porous film 50, and the solution holding hole 13 has an opening having a size corresponding to the film formation surface F on the porous film 50 side. The plating solution L contacts the porous film 50 through this opening.

ところで、図3Aに示す、比較となる成膜装置9を用いた成膜方法では、載置台16の収容凹部16aから、被成膜体Wが突出している。収容凹部16aには、ばねなどの付勢部材は設けられていない。図3Aに示す状態で、被成膜体Wの被成膜面Fに、金属皮膜をしようとすると、図3Bに示すように、載置台16と多孔質膜50との間に隙間が形成されているため、これらの隙間に、滲み出しためっき液が入り込ませる。これにより、めっき液Lの滲み出しにより、被成膜体Wの凹溝Rの表面にも、金属皮膜を成膜することができる。しかしながら、この場合には、凹溝Rの表面に、金属皮膜を成膜することができたとしても、多量のめっき液Lが載置台16の上に滲み出すため、めっき液Lの拭き取り作業が発生する。 By the way, in the film forming method using the comparative film forming apparatus 9 shown in FIG. A biasing member such as a spring is not provided in the accommodation recess 16a. In the state shown in FIG. 3A, when a metal film is formed on the film formation surface F of the film formation object W, a gap is formed between the mounting table 16 and the porous film 50 as shown in FIG. 3B. Therefore, the exuded plating solution enters into these gaps. As a result, a metal film can be formed also on the surface of the concave groove R of the object W to be film-formed by the bleeding of the plating solution L. However, in this case, even if a metal film can be formed on the surface of the groove R, a large amount of the plating solution L seeps out onto the mounting table 16, and the plating solution L cannot be wiped off. Occur.

そこで、本実施形態の成膜方法では、以下の挟み込み工程、含浸工程、および成膜工程を行う。まず、挟み込み工程では、図1Aに示すように、被成膜体Wの被成膜面Fが露出するように、被成膜体Wを収容する収容凹部16aが形成された載置台16と、載置台16に載置された被成膜体Wの被成膜面Fと対向する位置にめっき液Lが保持された液保持孔13が形成された挟持部材12とで、多孔質膜50に被成膜面Fが接触するように、多孔質膜50を挟み込む。このとき、付勢部材28が圧縮変形することで、被成膜面Fは、多孔質膜50を介してめっき液Lに接触し、載置台16の表面は、多孔質膜50を介して挟持部材12に接触する。 Therefore, in the film forming method of the present embodiment, the following sandwiching step, impregnation step, and film forming step are performed. First, in the sandwiching step, as shown in FIG. 1A, a mounting table 16 having an accommodating concave portion 16a for accommodating the film-forming object W so that the film-forming surface F of the film-forming object W is exposed; The holding member 12 having the liquid holding hole 13 holding the plating solution L at a position facing the film formation surface F of the film formation object W placed on the mounting table 16 , and the porous film 50 . The porous film 50 is sandwiched so that the film-forming surfaces F are in contact with each other. At this time, the biasing member 28 is compressed and deformed, so that the film-forming surface F comes into contact with the plating solution L through the porous film 50, and the surface of the mounting table 16 is sandwiched through the porous film 50. contact member 12;

図1Bに示すように、含浸工程では、加圧ポンプ19を駆動して、液収容室11のめっき液Lを加圧することにより、液保持孔13に保持されためっき液Lを加圧する。これにより、液保持孔13のめっき液Lを多孔質膜50に含浸させる。 As shown in FIG. 1B , in the impregnation step, the pressure pump 19 is driven to pressurize the plating solution L in the solution storage chamber 11 , thereby pressurizing the plating solution L held in the solution holding holes 13 . As a result, the porous film 50 is impregnated with the plating solution L in the solution holding holes 13 .

ここで、被成膜面Fに接触していない多孔質膜50の部分が、載置台16の表面に接触して、シール材の如く機能するので、図1Bに示すように、めっき液を加圧したとしても、多孔質膜からめっき液が滲み出すことを抑えることができる。この結果、含浸工程において、多孔質膜50を通過しためっき液Lの液圧により、付勢部材28が、さらに圧縮変形することで、被成膜体Wは、押し下げられる。これにより、被成膜体Wの被成膜面Fに形成された凹溝Rにも、めっき液が充填される。 Here, the portion of the porous film 50 that is not in contact with the film formation surface F is in contact with the surface of the mounting table 16 and functions like a sealing material. Even if the porous film is pressed, it is possible to prevent the plating solution from seeping out from the porous film. As a result, in the impregnation process, the liquid pressure of the plating solution L that has passed through the porous film 50 causes the biasing member 28 to be further compressed and deformed, thereby pushing down the object W to be film-formed. As a result, the grooves R formed in the film formation surface F of the film formation object W are also filled with the plating solution.

さらに、図1Cに示すように、成膜工程において、加圧ポンプ19によるめっき液Lの加圧を停止し、多孔質膜50に含浸させためっき液Lにより、被成膜面Fに金属皮膜を成膜する。このようにして、本実施形態によれば、めっき液Lが載置台16に漏れ出すことを抑えることができるため、載置台16に対するめっき液Lの拭き取り作業を低減することができる。 Furthermore, as shown in FIG. 1C, in the film formation process, the pressurization of the plating solution L by the pressure pump 19 is stopped, and the plating solution L impregnated in the porous film 50 is applied to the film formation surface F to form a metal film. to form a film. In this manner, according to the present embodiment, the plating solution L can be prevented from leaking onto the mounting table 16, so that the work of wiping the plating solution L off the mounting table 16 can be reduced.

さらに、図4Aに示すように、比較となる成膜装置9を用いた成膜方法では、成膜時に、被成膜体W(WA、WB)の高さが異なる場合、高さの高い被成膜体WAは、載置台16の表面から突出してしまう。したがって、被成膜体WA、WBに金属皮膜を成膜しようとした場合、被成膜体WA、WBに多孔質膜50を押圧すると、高さの低い被成膜体WBに比べて、高さの高い被成膜体WAの被成膜面Fに接触する多孔質膜50の部分に、過大な応力が作用する。これにより、図4Bに示すように、過大な多力が作用した多孔質膜50の部分が破損するおそれがある。 Furthermore, as shown in FIG. 4A, in the film forming method using the film forming apparatus 9 as a comparison, when the heights of the film forming objects W (WA, WB) are different during film formation, the height of the object W (WA, WB) is The film-forming body WA protrudes from the surface of the mounting table 16 . Therefore, when a metal film is to be formed on the film-forming bodies WA and WB, when the porous film 50 is pressed against the film-forming bodies WA and WB, the height of the film-forming bodies WA and WB is higher than that of the film-forming bodies WB, which is short. Excessive stress acts on the portion of the porous film 50 in contact with the film formation surface F of the film formation object WA having a high thickness. As a result, as shown in FIG. 4B, there is a risk that the portion of the porous membrane 50 on which the excessive force is applied may be damaged.

しかしながら、本実施形態では、このような高さの異なる被成膜体WA、WBであって、図2Aに示すように、載置台16からの飛び出し量L1、L2が異なるとしても、図2Bに示すように、付勢部材28は、成膜時に被成膜体Wが載置台16の表面と略面一となるまで(同じ面となるまで)圧縮変形するように設定されていればよい。これにより、多孔質膜50の破損を抑えつつ、被成膜体WA、WBの被成膜面Fに金属皮膜を成膜することができる。 However, in the present embodiment, even if the deposition targets WA and WB having different heights have different protruding amounts L1 and L2 from the mounting table 16 as shown in FIG. As shown, the urging member 28 may be set so as to compressively deform the object W to be film-formed until it becomes substantially flush with the surface of the mounting table 16 (until it becomes the same surface) during film-forming. As a result, the metal film can be formed on the film formation surfaces F of the film formation objects WA and WB while suppressing damage to the porous film 50 .

以上、本発明の実施形態について詳述したが、本発明は、前記の実施形態に限定されるものではなく、特許請求の範囲に記載された本発明の精神を逸脱しない範囲で、種々の設計変更を行うことができるものである。 Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various designs can be made without departing from the spirit of the invention described in the claims. Changes can be made.

1:成膜装置、10:装置本体、11:液収容室、12:挟持部材、13:液保持孔、16:載置台、F:被成膜面、L:めっき液、W:被成膜体 1: film forming apparatus, 10: apparatus main body, 11: liquid storage chamber, 12: sandwiching member, 13: liquid holding hole, 16: mounting table, F: film formation surface, L: plating solution, W: film formation target body

Claims (1)

金属イオンを含むめっき液が含浸された多孔質膜を、被成膜体に押し当てることにより、前記被成膜体の表面のうち、前記めっき液が接触した被成膜面に、前記金属イオンに由来する金属からなる金属皮膜を成膜する金属皮膜の成膜方法であって、
前記被成膜体の前記被成膜面が露出するように、前記被成膜体を収容する収容凹部が形成された載置台と、前記載置台に載置された前記被成膜体の前記被成膜面と対向する位置に前記めっき液が保持された液保持孔が形成された挟持部材とで、前記多孔質膜に前記被成膜面が接触するように前記多孔質膜を挟み込む工程と、
前記液保持孔に保持された前記めっき液を加圧して、前記めっき液を前記多孔質膜に含浸させる工程と、
前記めっき液の加圧を停止し、前記多孔質膜に含浸させためっき液により、前記被成膜面に前記金属皮膜を成膜する工程と、
を少なくとも含む金属皮膜の成膜方法。
By pressing a porous film impregnated with a plating solution containing metal ions against a film-forming object, the metal ion A method for forming a metal film comprising a metal derived from
a mounting table having an accommodation recess for accommodating the film formation target so that the film formation surface of the film formation target is exposed; and the film formation target mounted on the mounting table. A step of sandwiching the porous film between a sandwiching member having a solution holding hole in which the plating solution is held at a position facing the film-forming surface so that the film-forming surface is in contact with the porous film. When,
a step of pressurizing the plating solution held in the solution holding holes to impregnate the porous membrane with the plating solution;
A step of stopping pressurization of the plating solution and forming the metal film on the film-forming surface with the plating solution impregnated in the porous film;
A method for forming a metal film containing at least
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