JP2023069512A - Metal coating deposition device and deposition method thereof - Google Patents

Abstract

To provide a deposition device capable of preventing damage to a permeable membrane even when a base material is pressed with the permeable membrane before deposition or the base material is separated from the permeable membrane after deposition.SOLUTION: A metal coating deposition device comprises an upper housing 11A in which a first housing chamber 11 storing a plating solution L is formed, a permeable membrane 13 attached to the upper housing 11A so as to seal the first housing chamber 11 from below, where at least a metallic ion contained in the plating solution L permeate, and a lifting and lowering device 14 on which a base material W is placed to lift and lower the base material W so as to be brought into contact with and separated from the permeable membrane 13. A first flow channel 21 for communicating a space S and the outside of the device and a second flow channel 22 for communicating the space S and the outside of the device at a position different from the first flow channel 21 are provided in an upper part of the upper housing 11A. A cross sectional area of the first flow channel 21 is larger than a cross sectional area of the second flow channel 22. A check value 23 limiting an air flow from the outside of the device toward the space S is provided in the first flow channel 21.SELECTED DRAWING: Figure 1

Description

The present invention is a metal that forms a metal film derived from metal ions on the surface of a substrate by depositing the metal on the surface of the substrate by electrolytic plating or electroless plating from the metal ions contained in the plating solution. The present invention relates to a film forming apparatus and a method for forming a metal film.

For example, as a metal film forming apparatus for forming a metal film on the surface of a base material, Patent Document 1 discloses a metal film by electroplating using a solid electrolyte membrane as one of the permeable membranes that allow metal ions to pass through. has been proposed. This film forming apparatus includes a housing in which a storage chamber for storing a plating solution is formed. A storage chamber for storing the plating solution is formed in the housing, and a permeable membrane is attached to the housing so as to seal the storage chamber from below. At the time of film formation, a metal film is formed on the surface of the base material from the metal ions that have permeated the permeable membrane while maintaining the state of pressing the base material against the permeable membrane.

Japanese Patent Application Laid-Open No. 2021-008646

However, since the permeable membrane swells downward due to the weight of the plating solution in the storage chamber, the permeable membrane is pushed up by the base material when the substrate is evenly pressed against the permeable membrane. As a result, the pressure inside the storage chamber increases, and there is a risk that the permeable membrane will be damaged. Furthermore, after the film is formed, the substrate is pulled away from the permeable membrane. At this time, the permeable membrane pushed up by the substrate swells downward due to the weight of the plating solution. may be damaged.

The present invention has been made in view of such points. Provided are a metal film forming apparatus and a method for forming a metal film that can prevent breakage of a permeable film.

In view of the above problems, a metal film deposition apparatus according to the present invention includes a housing in which a storage chamber containing a plating solution is formed such that a space is formed in the upper portion, and the storage chamber is sealed from below. a permeable membrane attached to the housing and through which at least the metal ions contained in the plating solution permeate; and pressing the base material with the permeable membrane by lifting the base material placed on the lifting device, and maintaining the state of pressing the base material against the permeable membrane, the permeation A film forming apparatus for forming a metal film on the surface of the base material from metal ions that permeate the film, wherein a first flow path communicating the space with the outside of the apparatus is provided in the upper part of the housing; A second flow path communicating between the space and the outside of the device is provided at a position different from the first flow path, and the cross-sectional area of the first flow path is equal to that of the second flow path. , and the first flow path is provided with a check valve for restricting the flow of air from the outside of the device toward the space.

According to the present invention, the substrate placed on the lifting device is lifted to press the substrate against the permeable membrane. At this time, the permeable membrane bent downward is pushed up by the weight of the plating solution. Air can be discharged from the first channel to the outside of the device. As a result, it is possible to prevent the pressure in the storage chamber from increasing and to prevent the permeable membrane from being damaged.

Next, while maintaining the state of being pressed against the permeable membrane, a metal film is formed on the surface of the base material from the metal ions that have passed through the permeable membrane. pull away from At this time, since the first flow path is provided with a check valve that restricts the flow of air from the outside of the apparatus toward the space of the storage chamber, the air outside the apparatus (external air) flows through the second flow path. can be sucked into the space of the containment chamber. Since the channel cross-sectional area of the second channel is smaller than the channel cross-sectional area of the first channel, the air outside the device can be gently taken into the accommodation chamber. As a result, the permeable membrane gently swells downward due to the weight of the plating solution in the storage chamber, so that the impact acting on the permeable membrane can be reduced. As a result, it is possible to prevent the permeable membrane from being damaged.

In a more preferred embodiment, the plating solution is an electrolytic plating solution, the permeable membrane is a non-porous solid electrolyte membrane, the film-forming device is in contact with the plating solution in the storage chamber, It further comprises an anode arranged at a position facing the base material, and a power supply section for applying a voltage between the anode and the base material serving as a cathode.

According to this aspect, when a voltage is applied between the anode and the base material serving as the cathode while the base material is pressed against the solid electrolyte membrane, the metal ions contained in the plating solution pass through the solid electrolyte membrane. As a result, the metal is uniformly reduced on the surface of the base material, and the metal is deposited on the surface of the base material. As a result, a metal film can be formed on the surface of the substrate.

In another preferred aspect, the plating solution is an electroless plating solution, and the permeable membrane is a porous membrane that allows the plating solution to pass through. Also in this embodiment, when the substrate is pressed against the permeable membrane and held for a predetermined time, the plating solution oozes out from the permeable membrane and a metal film can be formed on the surface of the substrate by electroless plating.

As the present invention, a method for forming a metal film using the film forming apparatus described above is disclosed. In the film forming method according to the present invention, a pressing step of elevating the substrate placed on the lifting device to press the substrate against the permeable membrane; and pressing the substrate against the permeable membrane. a film forming step of forming the metal film on the surface of the base material from the metal ions that have permeated the permeable film while maintaining the state; and a separating step of separating the metal film from the permeable film, and in the pressing step, the permeable film bent downward by the weight of the plating solution is pushed up, thereby removing the air in the space from the first metal film. Air from the outside of the device is sucked into the space through the second flow path by separating the substrate from the permeable membrane in the separating step.

As described above, in the pressing step before the film forming step, the permeable membrane that is bent downward by the weight of the plating solution is pushed up, so that the air in the space can be discharged from the first flow path to the outside of the apparatus. Therefore, damage to the permeable membrane can be prevented. Furthermore, in the separation step after the film formation step, by separating the base material from the permeable membrane, the inflow of air from the outside of the device from the first flow path is restricted by the check valve, and from the second flow path, The air outside the device can be gently sucked into the space inside the accommodation chamber. As a result, the weight of the plating solution in the storage chamber gently swells the permeable membrane downward, thereby reducing the impact acting on the permeable membrane and preventing the permeable membrane from being damaged.

According to the apparatus for depositing a metal film of the present invention, the permeable membrane can be prevented from being damaged even if the permeable membrane is pressed against the substrate before the deposition or the substrate is separated from the permeable membrane after the deposition. can be done.

1 is a schematic cross-sectional view of a metal film deposition apparatus according to a first embodiment of the present invention; FIG. FIG. 2 is a flowchart of the film forming method shown in FIG. 1; 1. It is a figure for demonstrating the film-forming method using the film-forming apparatus shown in FIG. 1, (a) is a figure for demonstrating a pressing process, (b) is for demonstrating a film-forming process. and (c) is a diagram for explaining the separating step. FIG. 5 is a schematic cross-sectional view of a metal film deposition apparatus according to a second embodiment of the present invention. 5 is a diagram for explaining a film forming method using the film forming apparatus shown in FIG. 4, (a) is a diagram for explaining a pressing process, and (b) is for explaining a film forming process; FIG. and (c) is a diagram for explaining the separating step.

A metal film forming apparatus and a method for forming a metal film according to first and second embodiments of the present invention will be described below with reference to FIGS. 1 to 5. FIG.

<First Embodiment>
1. Metal film deposition apparatus 1 A deposition apparatus 1 according to the present embodiment includes a first accommodation chamber (accommodation chamber) 11, a second accommodation chamber 12, a permeable film 13, and an elevating device 14. there is The first storage chamber 11 is formed in the upper housing 11A and stores a plating solution L containing metal ions. The plating solution L is stored in the first storage chamber 11 so that a space S is formed above it.

The second storage chamber 12 is formed in the lower housing 12A. The second storage chamber 12 is arranged below the first storage chamber 11 and accommodates the base material W therein. A permeable membrane 13 is arranged between the first storage chamber 11 and the second storage chamber 12 so as to partition the first storage chamber 11 and the second storage chamber 12 . The first storage chamber 11 is sealed by covering the opening of the upper housing 11A with a permeable membrane 13 . As a result, while the plating solution L is stored in the first storage chamber 11, the first storage chamber 11 storing the plating solution L, the second storage chamber 12 storing the base material W, and the permeable membrane 13 can be partitioned. The lower housing 12A may be provided with an opening/closing door for taking the substrate W in and out of the second storage chamber 12, and the substrate W after the film formation is taken out from the second storage chamber 12 and placed in a new container. As long as the base material W can be placed in the second storage chamber 12, the device configuration is not particularly limited.

The elevating device 14 is a device for placing the base material W accommodated in the second accommodation chamber 12 and for elevating the base material W, and a direct-acting electric actuator (not shown) or the like is installed below the elevating device 14 . installed. A mounting table 14 a on which the substrate W is mounted is formed at the upper end of the lifting device 14 . A recess for positioning the substrate W is formed in the mounting table 14a.

In this embodiment, the plating solution L is an electrolytic plating solution, and the permeable membrane 13 is a nonporous solid electrolyte membrane 13A. In this embodiment, the anode 32 and the power source section 36 are further provided in order to form the metal film F by electrolytic plating. The anode 32 is arranged at a position facing the substrate W in contact with the plating solution L in the first storage chamber 11 .

The anode 32 may be, for example, a soluble anode made of the same material as the metal film F (such as Cu), or an anode made of a material that is insoluble in the plating solution L (such as Ti). .

The solid electrolyte membrane 13A is, for example, a solid electrolyte membrane having ion-exchange functional groups. The solid electrolyte membrane 13A is not particularly limited as long as it can permeate metal ions by bringing it into contact with the plating solution L and deposit metal derived from the metal ions on the surface of the substrate W. The solid electrolyte membrane 13A is flexible and preferably has a thickness in the range of 5 μm or more and 200 μm or less. As the solid electrolyte, for example, a fluorine-based resin such as Nafion (registered trademark) manufactured by DuPont, a hydrocarbon-based resin, a polyamic acid resin, and Celemion (CMV, CMD, CMF series) manufactured by Asahi Glass Co., Ltd., etc. have a cation exchange function. can be mentioned.

The plating solution L is a solution containing the metal of the metal film in the form of ions, and examples of the metal include Cu, Ni, Ag, and Au. , nitric acid, phosphoric acid, succinic acid, sulfuric acid, or pyrophosphoric acid.

In this embodiment, the anode 32 is suspended in the first housing chamber 11 by a support 34 and immersed in the plating solution L. As shown in FIG. A conductor 35 is inserted through the support 34. One end of the conductor 35 is connected to the anode 32 via wiring, and the other end of the conductor 35 is connected to an electric circuit (not shown) such as a switch. ) to the positive electrode of the power supply unit 36 . The negative electrode of the power source section 36 is connected to the substrate W via the mounting table 14a. Thereby, a voltage can be applied between the anode 32 and the base material W by the power supply section 36 with the base material W as a cathode.

The substrate W may be a substrate made of metal such as copper, iron or aluminum, and a metal film such as nickel may be further formed on the surface thereof. In addition, the main body of the base material W may be an insulating plate material made of glass epoxy resin or the like, and a metal film may be formed on the surface of this plate material (main body) by, for example, sputtering. There is no particular limitation as long as the W surface acts as a cathode.

According to the film forming apparatus 1 of the present embodiment, the substrate W placed on the lifting device 14 is lifted to press the substrate W against the solid electrolyte membrane 13A, and then the substrate W is pressed against the permeable membrane 13. A voltage is applied between the anode 32 and the substrate W (cathode) while maintaining the pressed state. As a result, the metal ions of the plating solution L stored in the first storage chamber 11 permeate the permeable membrane 13, and the permeated metal ions are reduced on the surface of the substrate W. As shown in FIG. As a result, the metal derived from the metal ions can be deposited on the surface of the substrate W, and a metal film can be formed on the surface of the substrate W.

By the way, as shown in FIG. 1, the permeable membrane 13 (solid electrolyte membrane 13A) is attached so as to seal the downward opening of the upper housing 11A, thereby forming a first storage chamber for storing the plating solution L. 11 is formed. Therefore, the weight of the plating solution L stored in the first storage chamber 11 acts on the permeable membrane 13, so that the permeable membrane 13 bends and expands downward. Therefore, in order to bring the permeable membrane 13 into uniform contact with the surface of the base material W, the permeable membrane 13 must be pushed up by the base material W when forming the metal film. If the first storage chamber 11 is sealed, this push-up may compress the air in the space S in the first storage chamber 11 and increase the pressure in the first storage chamber 11 . There is concern about damage to the

Further, after film formation, when the permeable film 13 is separated from the base material W, the permeable film 13 tries to bulge downward due to the weight of the plating solution L again. In the space S, the compressed air expands to return to its original state. Due to the restoring force of the compressed air and the weight of the plating solution L, an excessive load may be applied to the mounting portion such as the periphery of the permeable membrane 13. In this case also, there is a concern that the permeable membrane 13 may be damaged. be done.

In view of this point, in the present embodiment, the film forming apparatus 1 gently sucks air (outside air) from the outside of the apparatus (external space of the film forming apparatus) and rapidly discharges the air to the outside of the apparatus. There is also a mechanism for Specifically, as shown in FIG. 1, a first channel 21 communicating between the space S and the outside of the apparatus is provided in the upper part of the housing 11A. A second flow path 22 is provided to communicate with the outside of the device. It should be noted that the term “outside the apparatus” used herein means a space around the film forming apparatus 1 in which outside air exists under atmospheric pressure.

The flow channel cross-sectional area of the first flow channel 21 is larger than the flow channel cross-sectional area of the second flow channel 22, and the first flow channel 21 restricts the flow of air from the outside of the device toward the space S. A check valve 23 is provided. Here, a first pipe 21A and a second pipe 22A are connected to the upper housing 11A so that the first flow channel 21 and the second flow channel 22 communicate with the first storage chamber 11, respectively. is formed by Here, the pipe diameter (caliber) of the first pipe 21A is larger than the pipe diameter (caliber) of the second pipe 22A. This makes it easier for the air in the space S to flow from the first storage chamber 11 to the outside of the device through the first flow path 21 than through the second flow path 22 .

The check valve 23 is attached to the first pipe 21A, and restricts (prohibits) the flow of air (outside air) from the outside of the apparatus toward the space S, but the flow of air from the space S toward the outside of the apparatus is restricted. , is unrestricted (allowed without resistance). In addition, the "channel cross-sectional area" is the cross-sectional area of a cross section perpendicular to the direction in which fluid (air) flows in the channel.

A throttling mechanism (not shown) such as an orifice or a throttling valve for throttling the flow rate of outside air flowing into the space S from the outside of the apparatus may be further provided in the second flow path 22 . For example, in such a diaphragm mechanism, as shown below, after the metal film F is formed on the base material W, the space S continues until the next new base material W is brought into contact with the permeable membrane 13. It may be set to be a negative pressure (less than atmospheric pressure).

Furthermore, if the throttling mechanism is adjusted so that the space S becomes atmospheric pressure at the timing when the new base material W comes into contact with the permeable film 13, the permeable film 13 expands downward to its original state due to the weight of the plating solution L. Therefore, the wrinkles of the permeable film 13 generated after film formation are extended. In this manner, the transmissive film 13 can be corrected.

2. Metal Film Formation Method In this film formation method, a metal film is formed on the surface of the substrate W using the film formation apparatus 1 described above. In this embodiment, as a preparatory stage before film formation, the plating solution L is stored in the first storage chamber 11 so that the space S is formed above the first storage chamber 11 . Further, the substrate W is stored in the second storage chamber 12 so that the substrate W is placed on the mounting table 14a. In this state, with the solid electrolyte membrane 13A sandwiched therebetween, the plating solution L is placed above the solid electrolyte membrane 13A so as to be in contact with the solid electrolyte membrane 13A. 13A and the base material W are arrange|positioned at intervals.

The pressure in the space S in the first storage chamber 11 and the pressure in the second storage chamber 12 are atmospheric pressure, and the first storage chamber 11 is exposed to the outside of the device through the second flow path 22. are in communication. As shown in FIG. 1, the solid electrolyte membrane 13A is bent downward due to the weight of the plating solution L. As shown in FIG.

First, in this embodiment, the pressing step S1 shown in FIG. 2 is performed. Specifically, as shown in FIG. 3A, the substrate W placed on the lifting device 14 is raised to press the substrate W against the solid electrolyte membrane 13A. In order to bring the solid electrolyte membrane 13A into uniform contact with the substrate W, the solid electrolyte membrane 13A bent downward by the weight of the plating solution L is pushed up (lifted).

Here, since the channel cross-sectional area of the first channel 21 is larger than the channel cross-sectional area of the second channel 22, the first channel 21 has the following characteristics compared to the second channel 22: Low flow resistance. As a result, by pushing up the solid electrolyte membrane 13A, the air in the space S corresponding to the reduced volume of the first storage chamber 11 can be quickly discharged from the first flow path 21 to the outside of the device. As a result, the pressure in the first storage chamber 11 can be suppressed from increasing, and the pressure in the first storage chamber 11 can be maintained close to the atmospheric pressure, so it is possible to suppress the solid electrolyte membrane 13A from being damaged.

Next, the film forming step S2 shown in FIG. 2 is performed. Specifically, as shown in FIG. 3B, in the film forming step S2, while the solid electrolyte membrane 13A is kept pressed against the base material W, metal ions that permeate the solid electrolyte membrane 13A are A metal film F is formed on the surface of the substrate W. More specifically, in the first embodiment, as described above, an electrolytic plating solution is used as the plating solution L, and a non-porous solid electrolyte film is used as the solid electrolyte film 13A.

In the first storage chamber 11, the anode 32 is arranged at a position facing the base material W in contact with the plating solution L, and with the base material W pressed against the solid electrolyte membrane 13A, the anode 32 and the cathode A voltage is applied between the base material W. As a result, the metal ions contained in the electrolytic plating solution that has passed through the solid electrolyte membrane 13A are reduced on the surface of the substrate W, and the metal derived from the metal ions is deposited. In this manner, the metal film F derived from metal ions can be formed on the surface of the substrate W using electrolytic plating.

Next, the separating step S3 shown in FIG. 2 is performed. Specifically, as shown in FIG. 3(c), in the separation step S3, the substrate W on which the metal film F is formed is lowered to separate the metal film F from the solid electrolyte membrane 13A. At this time, since the first flow path 21 is provided with a check valve 23 that restricts the flow of air (outside air) from the outside of the device toward the space S of the first storage chamber 11, the second flow path Air outside the device (outside air) can be gently sucked into the space S of the first storage chamber 11 from 22 .

Furthermore, since the flow channel cross-sectional area of the second flow channel 22 is smaller than the flow channel cross-sectional area of the first flow channel 21 , the air outside the device can be gently taken into the first storage chamber 11 . As a result, the solid electrolyte membrane 13A gently expands downward due to the weight of the plating solution L in the first storage chamber 11, so that the impact acting on the solid electrolyte membrane 13A can be reduced. As a result, it is possible to prevent the solid electrolyte membrane 13A from being damaged.

<Second embodiment>
The film forming apparatus 1 and the film forming method according to the second embodiment differ from those of the first embodiment in that the metal film F is formed on the surface of the substrate W using electroless plating. is. Specifically, the film forming apparatus 1 for forming the metal film F of the present embodiment deposits metal on the surface of the base material W by electroless plating from the metal ions contained in the plating solution L. A metal film F derived from metal ions is formed on the surface of a substrate W. Configurations similar to those of the film forming apparatus 1 according to the first embodiment are denoted by the same reference numerals, detailed descriptions thereof are omitted, and only different points are described.

Here, electroless plating is a method of depositing (filming) a film by a chemical reduction reaction, unlike electrolytic plating in which electrolytic deposition is performed by a power supply unit. Electroless plating includes substitution plating, which utilizes the difference in ionization tendency between the metal composing the base material W and the metal ions contained in the plating solution (electroless plating solution), and the reduction ability of the reducing agent. There is self-catalytic reduction plating, etc., which is used for plating.

When the electroless plating is displacement plating, it is preferable to use, as the base material W, a metal material made of a metal that is less noble than the metal ions contained in the plating solution L (a metal that has a high ionization tendency). Further, a layer made of a metal less base than the metal ions contained in the plating solution L may be formed on the surface of the main body of the base material W. In this case, a metal material or a resin material that is more noble than the metal ions contained in the plating solution L may be used for the main body. As an example of such a base material W, when the metal ions contained in the plating solution L are Au ions, a base material W having a Ni plating layer formed on the surface of a main body made of Cu can be mentioned.

When the electroless plating is self-catalytic reduction plating, a metal material, a resin material, or the like may be used as the base material W as long as the material has a catalytic action that promotes the oxidation reaction of the reducing agent. Moreover, a layer made of a metal serving as a catalyst may be formed on the surface of the main body of the base material W. In this case, the main body of the base material W can be made of a metal material and a resin material that do not have catalytic activity. As an example of such a base material W, when the metal ions contained in the plating solution (electroless plating solution) L are Ni ions, a Pd plating layer serving as a catalyst is formed on the surface of the main body made of Cu. I can mention a few things.

As shown in FIG. 4, unlike the first embodiment, the film forming apparatus 1 according to the present embodiment does not include the anode 32, the support 34 for supporting the anode 32, the power source section 36, etc. As 13, a porous membrane 13B is used instead of the solid electrolyte membrane 13A. The porous film 13B seals the plating solution L contained in the upper housing 11A, and is attached to the upper housing 11A so as to face the substrate W (specifically, the mounting table 14a). The porous film 13B is a film through which the plating solution L can pass in the film thickness direction and has a plurality of holes through which the plating solution L can pass.

The thickness of the porous membrane 13B is preferably, for example, 5 μm or more and 200 μm or less. The average pore size of the porous membrane 13B may be, for example, 0.1 μm or more and 100 μm or less, and when the substrate W is contacted, the plating solution L passes through in the film thickness direction (specifically, the substrate W The pore diameter of the porous membrane 13B is not particularly limited as long as the plating solution L can seep out when the porous membrane 13B is pressed.

Moreover, in the present embodiment, the porous membrane 13B does not have to have an ion-exchange functional group (a cation-exchange functional group or an anion-exchange functional group) like a solid electrolyte. As a result, the porous membrane has almost no polarity, and the metal ions contained in the plating solution L can permeate through the pores without being trapped in the porous membrane. Therefore, such a plating solution L can be applied regardless of whether the metal ions contained in the plating solution L are cations, anions, or nonions. As such a plating solution L, a polyolefin resin can be used. Examples of polyolefin resins include polyethylene resins, polypropylene resins, and mixed resins thereof.

The plating solution (electroless plating solution) L is a solution supplied to one side of the porous film 13B, and contains at least metal ions deposited as the metal of the metal film F by electroless plating. The plating solution L for displacement plating or autocatalytic reduction plating may be a plating solution that is generally available on the market.

When the electroless plating is displacement plating, the metal of the metal ions contained in the plating solution L is a metal that is more noble (lower in ionization tendency) than the material of the substrate W. For example, when the base material W is made of Cu, Ag, Pt, Au, or the like can be mentioned as the metal of the metal ion.

When the electroless plating is autocatalytic reduction plating, the plating solution L contains metal ions deposited as the metal of the metal film F and a reducing agent. The metal of the metal ion is not particularly limited as long as it is a metal having catalytic activity, and examples thereof include Ag, Pt, and Au. Examples of reducing agents include hypophosphorous acid, dimethylamine borane, and the like. The plating solution L may further contain a stabilizer, a complexing agent, a reducing agent, and the like.

In the film forming method according to this embodiment, the pressing step S1 (see FIG. 5A) and the separating step S3 (see FIG. 5C) are performed in the same manner as in the first embodiment. As shown in FIG. 5A, in the pressing step S1, the substrate W is pressed against the porous membrane 13B, so that the plating solution L in the first storage chamber 11 passes through the porous membrane 13B and It oozes out on the surface of the material W. Therefore, as shown in FIG. 5B, in the present embodiment, if the substrate W is kept pressed against the porous membrane 13B for a predetermined time in the film forming step S2, the substrate W is deposited by electroless plating. A metal film F can be formed on the surface.

Also in the present embodiment, in the pressing step S1, the porous membrane 13B bent downward by the weight of the plating solution L is pushed up, so that the air in the space S is rapidly discharged from the first flow path 21 to the outside of the apparatus. Therefore, damage to the porous membrane 13B can be prevented. In the separating step S3, by separating the substrate W from the porous membrane 13B, the air outside the device can be gently sucked into the space S from the second flow path 22, thereby preventing damage to the porous membrane 13B. can do.

A throttling mechanism (not shown) such as an orifice or a throttling valve for throttling the flow rate of outside air flowing into the space S from the outside of the apparatus may be further provided in the second flow path 22 . For example, in such a throttle mechanism, as shown below, after the metal film F is formed on the base material W, the space S continues until the next new base material W is brought into contact with the porous membrane 13B. It may be set to be a negative pressure (less than atmospheric pressure).

As a result, the plating solution L in the first storage chamber 11 can be prevented from exuding from the porous film 13B until the substrate W is brought into contact with the porous film 13B. Furthermore, if the squeezing mechanism is adjusted so that the space S becomes atmospheric pressure at the timing when the new base material W comes into contact with the porous film 13B, the porous film 13B will swell downward under the weight of the plating solution L in its original state. , wrinkles of the porous film 13B generated after film formation are extended, and the porous film 13B is corrected.

An embodiment of the present invention has been described in detail above, but the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention described in the scope of claims. Design changes can be made.

In the first and second embodiments, the metal film is formed on the surface of one substrate placed on the mounting table. A metal coating may be simultaneously formed on the surface of the substrate.

In the pressing step, part of the plating solution may enter the first and second flow paths as long as the plating solution is not discharged to the outside of the apparatus.

1: film forming apparatus, 11: first accommodation chamber (accommodation chamber), 11A: upper housing (housing), 13: permeable membrane, 13A: solid electrolyte membrane, 13B: porous membrane, 14: lifting device, 21: first flow path, 22: second flow path, 23: check valve, 32: anode, 36: power supply unit, F: metal film, S: space, L: plating solution, W: base material

Claims (4)

a housing having a storage chamber in which a plating solution is stored such that a space is formed in the upper portion;
a permeable membrane attached to the housing so as to seal the storage chamber from below and through which at least metal ions contained in the plating solution permeate;
a lifting device for placing a base material and lifting and lowering the base material so as to be able to come into contact with and separate from the permeable membrane;
By elevating the base material placed on the lifting device, the base material is pressed by the permeable membrane, and the light is transmitted through the permeable membrane while maintaining the state of pressing the base material against the permeable membrane. A film forming apparatus for forming a metal film on the surface of the substrate from metal ions,
A first flow path communicating between the space and the outside of the device and a second flow path communicating between the space and the outside of the device at a position different from the first flow path are provided in the upper part of the housing. and
The flow channel cross-sectional area of the first flow channel is larger than the flow channel cross-sectional area of the second flow channel, and the flow of air from the outside of the device toward the space is restricted in the first flow channel. An apparatus for forming a metal film, comprising a check valve. The plating solution is an electrolytic plating solution,
The permeable membrane is a nonporous solid electrolyte membrane,
The film forming apparatus is
an anode that is in contact with the plating solution and is arranged at a position facing the substrate in the storage chamber;
2. The apparatus for depositing a metal film according to claim 1, further comprising a power source that applies a voltage between the anode and the base material serving as a cathode. The plating solution is an electroless plating solution,
2. The apparatus for depositing a metal film according to claim 1, wherein said permeable film is a porous film through which said plating solution passes. A method for forming a metal film using the film forming apparatus according to any one of claims 1 to 3,
a pressing step of elevating the substrate placed on the lifting device and pressing the substrate against the permeable membrane;
a film-forming step of forming the metal film on the surface of the base material from metal ions that have passed through the permeable membrane while the base material is kept pressed against the permeable membrane;
a separating step of lowering the base material on which the metal film is formed to separate the metal film from the permeable film;
In the pressing step, by pushing up the permeable membrane bent downward by the weight of the plating solution, the air in the space is discharged from the first flow path to the outside of the apparatus,
A method for forming a metal film, wherein in the separating step, air outside the device is sucked into the space through the second flow path by separating the base material from the permeable membrane.

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