JP2022067102A5 - - Google Patents

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JP2022067102A5
JP2022067102A5 JP2022025297A JP2022025297A JP2022067102A5 JP 2022067102 A5 JP2022067102 A5 JP 2022067102A5 JP 2022025297 A JP2022025297 A JP 2022025297A JP 2022025297 A JP2022025297 A JP 2022025297A JP 2022067102 A5 JP2022067102 A5 JP 2022067102A5
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light
conductive layer
main surface
transmitting conductive
thickness direction
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JP2022025297A
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JP7372995B2 (en
JP2022067102A (en
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樹脂層と、光透過性導電層とを厚み方向に順に備える光透過性導電層積層体の製造方法であり、
前記光透過性導電層は、第1主面、および、前記第1主面の厚み方向一方側に間隔を隔てて対向配置される第2主面を有し、前記厚み方向に直交する面方向に延びる単一の層を有し、
前記第1主面および前記第2主面のいずれか一方が前記樹脂層に接触し、
前記光透過性導電層は、導電性酸化物を含み、
前記導電性酸化物が、アルゴンと、前記アルゴンより原子番号が大きい希ガスとを含有し、
前記光透過性導電層は、スパッタリングにより成膜されるスパッタリング層であり、
前記希ガスを含む第1領域と、前記アルゴンを含む第2領域とを厚み方向に順に有することを特徴とする、光透過性導電層積層体の製造方法。
A method for manufacturing a light-transmitting conductive layer laminate having a resin layer and a light-transmitting conductive layer in order in the thickness direction,
The light-transmissive conductive layer has a first main surface and a second main surface arranged opposite to one side in the thickness direction of the first main surface with a gap therebetween, and in a plane direction orthogonal to the thickness direction. having a single layer extending to
either one of the first main surface and the second main surface is in contact with the resin layer;
the light transmissive conductive layer comprises a conductive oxide;
the conductive oxide contains argon and a noble gas having an atomic number greater than that of argon;
The light-transmitting conductive layer is a sputtering layer formed by sputtering,
A method for producing a light-transmitting conductive layer laminate , wherein the first region containing the rare gas and the second region containing the argon are provided in order in the thickness direction .
前記希ガスが、クリプトンであることを特徴とする、請求項1に記載の光透過性導電層積層体の製造方法。 2. The method for producing a light-transmitting conductive layer laminate according to claim 1, wherein said rare gas is krypton. 前記導電性酸化物が、インジウムおよびスズをさらに含有することを特徴とする、請求項1または2に記載の光透過性導電層積層体の製造方法。 3. The method for producing a light-transmissive conductive layer laminate according to claim 1, wherein said conductive oxide further contains indium and tin. 前記樹脂層が、前記光透過性導電層の前記第1主面に接触することを特徴とする、請求項1~3のいずれか一項に記載の光透過性導電層積層体の製造方法。 4. The method for producing a light-transmitting conductive layer laminate according to claim 1, wherein the resin layer is in contact with the first main surface of the light-transmitting conductive layer. 前記樹脂層は、ガラス基板と隣接しない、請求項1~4のいずれか一項に記載の光透過性導電層積層体の製造方法。 The method for producing a light-transmitting conductive layer laminate according to any one of claims 1 to 4, wherein the resin layer is not adjacent to the glass substrate. 樹脂層と、光透過性導電層とを厚み方向に順に備える光透過性導電層積層体であり、A light-transmitting conductive layer laminate including a resin layer and a light-transmitting conductive layer in order in the thickness direction,
前記光透過性導電層は、第1主面、および、前記第1主面の厚み方向一方側に間隔を隔てて対向配置される第2主面を有し、前記厚み方向に直交する面方向に延びる単一の層を有し、The light-transmissive conductive layer has a first main surface and a second main surface arranged opposite to one side in the thickness direction of the first main surface with a gap therebetween, and in a plane direction orthogonal to the thickness direction. having a single layer extending to
前記第1主面および前記第2主面のいずれか一方が前記樹脂層に接触し、either one of the first main surface and the second main surface is in contact with the resin layer;
前記光透過性導電層は、導電性酸化物を含み、the light transmissive conductive layer comprises a conductive oxide;
前記導電性酸化物が、アルゴンと、前記アルゴンより原子番号が大きい希ガスとを含有し、the conductive oxide contains argon and a noble gas having an atomic number greater than that of argon;
前記光透過性導電層は、スパッタリング層であり、The light-transmitting conductive layer is a sputtering layer,
前記希ガスを含む第1領域と、前記アルゴンを含む第2領域とを厚み方向に順に有することを特徴とする、光透過性導電層積層体。A light-transmitting conductive layer laminate, comprising a first region containing the rare gas and a second region containing the argon in order in the thickness direction.
前記希ガスが、クリプトンであることを特徴とする、請求項6に記載の光透過性導電層積層体。7. The light transmissive conductive layer laminate according to claim 6, wherein said rare gas is krypton. 前記導電性酸化物が、インジウムおよびスズをさらに含有することを特徴とする、請求項6または7に記載の光透過性導電層積層体。8. The light-transmitting conductive layer laminate according to claim 6, wherein said conductive oxide further contains indium and tin. 前記樹脂層が、前記光透過性導電層の前記第1主面に接触することを特徴とする、請求項6~8のいずれか一項に記載の光透過性導電層積層体。9. The light-transmitting conductive layer laminate according to claim 6, wherein the resin layer is in contact with the first main surface of the light-transmitting conductive layer. 前記樹脂層は、ガラス基板と隣接しない、請求項6~9のいずれか一項に記載の光透過性導電層積層体。10. The light-transmitting conductive layer laminate according to claim 6, wherein the resin layer is not adjacent to the glass substrate.
JP2022025297A 2020-04-20 2022-02-22 Method for producing a light-transparent conductive layer laminate and light-transparent conductive layer laminate Active JP7372995B2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020074853 2020-04-20
JP2020074853 2020-04-20
JP2020200421 2020-12-02
JP2020200421 2020-12-02
JP2021517074A JPWO2021215153A1 (en) 2020-04-20 2021-03-18
PCT/JP2021/011157 WO2021215153A1 (en) 2020-04-20 2021-03-18 Light-transmitting electrically conductive layer laminated body

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JP2022067102A JP2022067102A (en) 2022-05-02
JP2022067102A5 true JP2022067102A5 (en) 2023-02-28
JP7372995B2 JP7372995B2 (en) 2023-11-01

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JP2022025297A Active JP7372995B2 (en) 2020-04-20 2022-02-22 Method for producing a light-transparent conductive layer laminate and light-transparent conductive layer laminate

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JP (2) JPWO2021215153A1 (en)
KR (1) KR20230004439A (en)
CN (1) CN115428100A (en)
TW (1) TW202141531A (en)
WO (1) WO2021215153A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023013734A1 (en) * 2021-08-06 2023-02-09 日東電工株式会社 Laminate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
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JPH05334924A (en) * 1992-05-29 1993-12-17 Tonen Corp Manufacture of transparent conductive film
JPH07262829A (en) 1994-03-25 1995-10-13 Hitachi Ltd Transparent conductive film and its forming method
JPH1036961A (en) * 1996-07-22 1998-02-10 Sumitomo Metal Mining Co Ltd Film formation by sputtering method
JP2000038654A (en) * 1998-07-21 2000-02-08 Nippon Sheet Glass Co Ltd Production of substrate with transparent electrically conductive film, substrate with transparent electrically conductive film and liquid crystal displaying element
KR20070030620A (en) * 2005-09-13 2007-03-16 삼성에스디아이 주식회사 Method for depositing electrode and the organic light emitting display produced using it

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