CN100446296C - Two-dimensional display panel and its black matrix structure - Google Patents
Two-dimensional display panel and its black matrix structure Download PDFInfo
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- CN100446296C CN100446296C CNB2005101202887A CN200510120288A CN100446296C CN 100446296 C CN100446296 C CN 100446296C CN B2005101202887 A CNB2005101202887 A CN B2005101202887A CN 200510120288 A CN200510120288 A CN 200510120288A CN 100446296 C CN100446296 C CN 100446296C
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Abstract
The present invention relates to a black matrix structure which comprises a semiconductor layer and a shading layer, wherein a semiconductor comprises a first surface and a second surface; the shading layer is arranged on the first surface of the semiconductor layer. The second surface of the semiconductor layer is an incident face of environment light.
Description
Technical field
The present invention relates to a kind of two-d display panel and black matrix" thereof (black matrix) structure, relate in particular to a kind of organic LED display panel that is provided with the black matrix structure of light shield layer and semiconductor layer.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) display, be electroluminescence (Electroluminescene, EL) display is a kind of, itself because have that high brightness, reaction speed are fast, compact, advantages such as low power consumption and wide viewing angle, and be expected to replace the main flow that LCD and plasma scope become flat-panel screens of new generation.
Generally speaking, because wire pattern that organic light emitting diode display inside is made of metal material or electrode etc. can the reflection environment light sources, cause the not good problem of contrast, therefore can be provided with black matrix" or polaroid etc. in the organic light emitting diode display, to improve the not good shortcoming of contrast.
Please refer to Fig. 1.Fig. 1 is existing one schematic diagram that is arranged at the black matrix structure of organic light emitting diode display.As shown in Figure 1, existing black matrix structure 10 is arranged on the substrate 20 of organic light emitting diode display, and black matrix structure 10 comprises that the chromium oxide layer 12, of being located at substrate 20 surfaces is located at the chromium nitride layer 14 on chromium oxide layer 12 surfaces, and a chromium layer 16 of being located at chromium nitride layer 14 surfaces.Another surface of substrate 20 is the display surface of organic light emitting diode display, when environment light source is injected substrate 20 (shown in solid arrow among the figure), the surround lighting of black matrix structure 10 meeting absorption portion, use and reduce the reflection (shown in dotted arrow among the figure) that environment light source caused, and then promote the contrast of organic light emitting diode display.
Yet existing black matrix structure causes can producing noxious substance, for example 6 valency chromium (Cr behind etch process owing to be made of materials such as chromium, chromium oxide and chromium nitrides
6+) and cause problem of environmental pollution, therefore present many advanced countries have conferred the range of application of restriction above-mentioned material.Moreover the antistatic effect of existing black matrix structure is not good, causes organic light emitting diode display to be subjected to electrostatic influence easily and impaired.In addition, though the reflection that the surface that utilizes light polarizing film to be attached at substrate can effectively be lowered environment light source and caused, 43% the transmissivity but the light that Organic Light Emitting Diode itself is launched is also only had an appointment, therefore cause the brightness reduction and the power consumption of organic light emitting diode display to promote, the practice that polaroid is set simultaneously also can cause problems such as plate thickness increase and attachment process rate of finished products.
Summary of the invention
One of purpose of the present invention is to provide a kind of two-d display panel and black matrix structure thereof.
Above-mentioned black matrix structure comprises semi-conductor layer, and it comprises a first surface and a second surface; And a light shield layer, be located at the first surface of semiconductor layer; Wherein the second surface of semiconductor layer is the surround lighting plane of incidence.
Above-mentioned two-d display panel comprises:
One substrate, definition has a plurality of pixel regions on it; And
One black matrix structure comprises:
Semi-conductor layer; And
One light shield layer piles up mutually with semiconductor layer.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred implementation cited below particularly, and conjunction with figs. are described in detail below.Yet following preferred implementation and accompanying drawing are only for reference and explanation usefulness, are not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the existing schematic diagram that is arranged at the black matrix structure of organic light emitting diode display.
Fig. 2 is the schematic diagram of the black matrix structure of one embodiment of the present invention.
Fig. 3 is the schematic diagram of the black matrix structure of another preferred embodiment of the present invention.
Fig. 4 is the schematic diagram of the organic LED display panel of one embodiment of the present invention.
Fig. 5 is the schematic diagram of the organic LED display panel of another preferred embodiment of the present invention.
Fig. 6 is an antireflection ability effect comparison diagram of black matrix structure of the present invention.
Fig. 7 is another antireflection ability effect comparison diagram of black matrix structure of the present invention.
The main element symbol description
10 black matrix structures, 12 chromium oxide layers
14 chromium nitride layers, 16 chromium layers
20 substrates, 30 black matrix structures
32 semiconductor layers, 34 light shield layers
40 substrates, 50 black matrix structures
52 photic zones, 54 semiconductor layers
56 light shield layers, 60 substrates
70 Organic Light Emitting Diode display surfaces, 72 substrates
Plate
74 pixel regions, 76 viewing areas
78 switch element districts, 80 black matrix structures
82 photic zones, 84 semiconductor layers
86 light shield layers, 88 inner-dielectric-ayers
90 switch elements, 92 pixel electrodes
94 organic luminous layers, 96 negative electrodes
Embodiment
Please refer to Fig. 2.Fig. 2 is the schematic diagram of the black matrix structure of one embodiment of the present invention.As shown in Figure 2, black matrix structure 30 is arranged on the substrate 40 of an organic light emitting diode display, and black matrix structure 30 comprises a semi-conductor layer 32 and a light shield layer 34, wherein the second surface of semiconductor layer 32 (lower surface) is the surround lighting plane of incidence, and contact with the surface of substrate 40, light shield layer 34 then is located at the first surface (upper surface) of semiconductor layer 32.In the present embodiment, the thickness of semiconductor layer 32 is between 100 to 300 dusts, but is not limited thereto in the scope, and the material of semiconductor layer 32 can comprise silicon or germanium, and the lattice kenel of silicon or germanium also can be monocrystalline, amorphous or polycrystalline and arranges simultaneously.In addition, the material of light shield layer 34 then comprises the alloy of titanium, nickel metal, indium metal, copper metal, silver metal, aluminum metal, molybdenum or aforementioned metal, or the stacked combination of the oxide of the alloy of aforementioned metal, and also can add semiconductor dopant in the light shield layer 34.Because semiconductor layer 32 itself has the characteristic of part extinction, is used light shield layer 34 again, makes black matrix structure 30 of the present invention have good anti-reflection effect.
Please refer to Fig. 3.Fig. 3 is the schematic diagram of the black matrix structure of another preferred embodiment of the present invention.As shown in Figure 3, black matrix structure 50 is arranged on the substrate 60 of an organic light emitting diode display, and black matrix structure 50 comprises that the photic zone 52, of being located at substrate 60 surfaces is located at the semiconductor layer 54 on photic zone 52 surfaces, an and light shield layer 56 of being located at semiconductor layer 54 surfaces, wherein in the present embodiment, the refractive index of photic zone 52 must be greater than the refractive index of substrate 60, and the thickness of photic zone 52 is between 400 to 700 dusts, but is not limited thereto in the scope.The material of photic zone 52 then can be the titanium oxide, the nickel metal oxide, the tantalum metal oxide, the indium metal oxide, the copper metal oxide, siluer metal oxide, the aluminum metal oxide, the molybdenum oxide, the tin metal oxide, tungsten metal oxidic, the semi-conducting material oxide, the titanium alloy oxide, the nickel alloy oxide, the tantalum alloy oxide, the indium alloy oxide, the copper alloy oxide, the silver alloy oxide, the oxidized aluminum alloy thing, the molybdenum alloy oxide, tin alloy oxide or tungsten alloy oxide etc.In addition, the thickness of semiconductor layer 54 is between 100 to 300 dusts, and semiconductor layer 54 materials then to be same as the last preferred embodiment of the present invention described, can comprise silicon or germanium, the lattice kenel of silicon or germanium also can be monocrystalline, amorphous or polycrystalline and arranges simultaneously.Moreover, the material of light shield layer 56 is also with aforementioned preferred embodiment, can comprise titanium, nickel metal, indium metal, copper metal, silver metal, aluminum metal, molybdenum or its alloy, or with the stacked combination of the oxide of above-mentioned alloy, and also can add semiconductor dopant in the light shield layer 56.In the present embodiment, except aforesaid semiconductor layer 54 is used light shield layer 56 and has the good anti-reflective, the material of photic zone 52 is if select electric conducting material for use, also can increase the antistatic effect of black matrix structure 50 and avoids organic LED display panel to be subjected to the influence of static and impaired.
Please refer to Fig. 4.Fig. 4 is the schematic diagram of the organic LED display panel of one embodiment of the present invention, wherein for showing feature of the present invention place, only shows single substrate and single pixel region in Fig. 4.As shown in Figure 4, organic LED display panel 70 comprises a substrate (infrabasal plate) 72, its material can be light transmissive materials such as glass, plastics or quartz, and then defining on the substrate 72 has a plurality of pixel regions 74, and each pixel region 74 is divided into a viewing area 76 and a switch element district 78.In addition, the surface of substrate 72 is provided with a black matrix structure 80, and it comprises that the photic zone 82, of being located at substrate 72 surfaces is located at the semiconductor layer 84 on photic zone 82 surfaces, and a light shield layer 86 of being located at semiconductor layer 84 surfaces.Wherein in the present embodiment, the material and the thickness of the photic zone 82 that black matrix structure 80 is comprised, semiconductor layer 84 and light shield layer 86 are described like previous embodiment, do not add in addition at this and give unnecessary details.What be worth being illustrated in addition is that light shield layer 86 has light tight characteristic, therefore must be arranged in the switch element district 78 and outside the viewing area 76, semiconductor layer 84 is not then limit with the position of photic zone 82, and semiconductor layer 84 only is arranged in the switch element district 78 with photic zone 82 in the present embodiment.In addition, then stack gradually an inner-dielectric-ayer 88 as flatness layer on the light shield layer 86 in the substrate of viewing area 76 72 and switch element district 78, and a switch element 90 (a for example thin-film transistor element) that is positioned at switch element district 78.In addition, then comprise a pixel electrode that is electrically connected with switch element 90 92, an organic luminous layer 94 and a negative electrode 96 successively on inner-dielectric-ayer 88 and the switch element 90.
Please refer to Fig. 5.Fig. 5 is the schematic diagram of the organic LED display panel of another preferred embodiment of the present invention, and wherein different for clear relatively present embodiment and last embodiment are represented at the label that Fig. 5 is identical with similar elements use among Fig. 4.As shown in Figure 5, organic LED display panel 70 comprises a substrate 72, and then defining on the substrate 72 has a plurality of pixel regions 74, and each pixel region 74 is divided into a viewing area 76 and a switch element district 78.In addition, the surface of substrate 72 is provided with a black matrix structure 80, and it comprises that the photic zone 82, of being located at substrate 70 surfaces is located at the semiconductor layer 84 on photic zone 82 surfaces, and a light shield layer 86 of being located at semiconductor layer 84 surfaces.Wherein light shield layer 86 has light tight characteristic, therefore must be arranged in the switch element district 78 with viewing area 76 outside, semiconductor layer 84 then is arranged in the switch element district 78 simultaneously with photic zone 82 and in the viewing area 76, uses simplification technology.Then stack gradually an inner-dielectric-ayer 88 as flatness layer on the semiconductor layer 84 of viewing area 76 and the light shield layer 86 in switch element district 78, and a switch element 90 (a for example thin-film transistor element) that is positioned at switch element district 78.In addition, then comprise a pixel electrode that is electrically connected with switch element 90 92, an organic luminous layer 94 and a negative electrode 96 successively on inner-dielectric-ayer 88 and the switch element 90.
Above-mentioned two embodiment difference parts be the included photic zone 82 of black matrix structure 80, semiconductor layer 84 and light shield layer 86 that the position is set is different, wherein photic zone 82, semiconductor layer 84 all are arranged in the switch element district 78 of organic LED display panel 70 with light shield layer 86 in one embodiment, and light shield layer 86 is arranged in the switch element district 76 in another embodiment, and photic zone 82 then is arranged in viewing area 76 and the switch element district 78 simultaneously with semiconductor layer 84.What deserves to be explained is in addition, because principal character of the present invention place is the composition of black matrix structure 80 and position etc., therefore do not show another substrate of organic LED display panel 70, and other element of organic LED display panel 70, the for example electrode of light-emitting diode and composition etc., be not limited to the practice that the foregoing description discloses, and can comprise various existing led designs.
Please refer to Fig. 6.Fig. 6 is an antireflection ability effect comparison diagram of black matrix structure of the present invention.As shown in Figure 6, curve # 1 representative only comprises the situation of the light shield layer of being made up of molybdenum at black matrix structure, the reflectivity of black matrix structure under this situation in visible wavelength range (380 to 780 nanometer) approximately between 50% to 60%, therefore the antireflection ability of the black matrix structure of only being made up of molybdenum is not good enough.The euphotic situation that light shield layer that on behalf of black matrix structure, curve # 2, #3 and #4 comprise to be made up of molybdenum and ITO form, wherein the thickness of ITO is respectively 350 dusts, 500 dusts and 650 dusts, under this situation, the reflectivity of black matrix structure is all rough between 25% to 50%.In addition, on behalf of black matrix structure, curve # 5 comprise the situation of semiconductor layer, and reflectivity declines to a great extent and the antireflection ability is effectively promoted under this situation.Shown in curve # 5, comprise at black matrix structure under the situation of molybdenum (light shield layer), amorphous silicon (semiconductor layer) and ITO (photic zone), reflectivity can reach the degree between 5% to 20% in most of visible-range, and producing splendid antireflection ability, set semiconductor layer has significant antireflection effect in the therefore visible black matrix structure of the present invention.
Please refer to Fig. 7.Fig. 7 is another antireflection ability effect comparison diagram of black matrix structure of the present invention.As shown in Figure 7, curve # 1 to #9 and #A represent ITO (photic zone) and amorphous silicon (semiconductor layer) respectively under the different-thickness combination, the variation of the reflectivity of black matrix structure between most of visible wavelength range (400 to 700 nanometer), curve #B then represents the reflectivity of the existing black matrix structure of being made up of chromium, chromium nitride and chromium oxide.As shown in Figure 7, when the thickness of ITO is that the thickness of 600 dusts and amorphous silicon is when being 200 dusts, black matrix structure of the present invention has antireflection ability preferably, the reflectivity of its reflectivity and existing black matrix structure is close under this forms, even in the part wave-length coverage, have the reflectivity lower than existing black matrix structure, and have antireflection ability preferably.
In sum, organic LED display panel of the present invention utilizes one to comprise light shield layer, semiconductor layer and euphotic black matrix structure, not only can solve the high pollution of existing black matrix structure and improve anti-static ability, splendid antireflection ability also can be provided simultaneously.It should be noted that the foregoing description is that example illustrates feature of the present invention with back side illuminated (rear emission type) organic LED display panel, but two-d display panel of the present invention is not limited to this and can be positive luminous organic LED display panel, display panels or other two-d display panel, switch element also is not limited to active formula switch element in addition, and can be the passive type switch element.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (17)
1. black matrix structure comprises:
Semi-conductor layer comprises a first surface and a second surface;
One light shield layer is located at this first surface of this semiconductor layer; And
One photic zone be located at this second surface of this semiconductor layer, and this euphotic material comprises the metal oxide of titanium, nickel, tantalum, indium, copper, silver, aluminium, molybdenum, tin or tungsten;
Wherein this second surface of this semiconductor layer is the surround lighting plane of incidence.
2. black matrix structure as claimed in claim 1, wherein the material of this light shield layer comprises the stacked combination of oxide of the alloy of the alloy of titanium, nickel metal, indium metal, copper metal, silver metal, aluminum metal, molybdenum or aforementioned metal or aforementioned metal.
3. black matrix structure as claimed in claim 1, wherein this light shield layer comprises the semiconductor dopant.
4. black matrix structure as claimed in claim 1, wherein the thickness of this semiconductor layer is between 100 to 300 dusts.
5. black matrix structure as claimed in claim 1, wherein this euphotic thickness is between 400 to 700 dusts.
6. two-d display panel comprises:
One substrate, definition has a plurality of pixel regions on it; And
One black matrix structure is located on this substrate, and this black matrix structure comprises:
Semi-conductor layer;
One light shield layer piles up mutually with this semiconductor layer; And
One photic zone is located between this semiconductor layer and this substrate, and this euphotic material comprises the metal oxide of titanium, nickel, tantalum, indium, copper, silver, aluminium, molybdenum, tin or tungsten.
7. two-d display panel as claimed in claim 6, wherein the material of this light shield layer comprises the alloy of titanium, nickel metal, indium metal, copper metal, silver metal, aluminum metal, molybdenum or aforementioned metal, or the stacked combination of the oxide of the alloy of aforementioned metal.
8. two-d display panel as claimed in claim 6, wherein this light shield layer comprises the semiconductor dopant.
9. two-d display panel as claimed in claim 6, wherein the material of this semiconductor layer comprises silicon or germanium.
10. two-d display panel as claimed in claim 6, wherein each described pixel region is divided into a viewing area and a switch element district.
11. two-d display panel as claimed in claim 10, wherein this semiconductor layer only is arranged in each described switch element district.
12. two-d display panel as claimed in claim 10, wherein this semiconductor layer be arranged in each described switch element district with each described viewing area in.
13. two-d display panel as claimed in claim 10, wherein this light shield layer be arranged in each described switch element district with each described viewing area outside.
14. two-d display panel as claimed in claim 6, wherein the thickness of this semiconductor layer is between 100 to 300 dusts.
15. two-d display panel as claimed in claim 6, wherein this euphotic refractive index is greater than the refractive index of this substrate.
16. two-d display panel as claimed in claim 6, wherein the material of this substrate comprises glass, plastics or quartz.
17. two-d display panel as claimed in claim 6, wherein this euphotic thickness is between 400 to 700 dusts.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10295709B2 (en) | 2015-03-18 | 2019-05-21 | Boe Technology Group Co., Ltd. | Black matrix, flat panel display device and method for producing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102023408B (en) | 2009-09-11 | 2013-04-03 | 北京京东方光电科技有限公司 | Color film substrate of liquid crystal display and manufacturing method thereof |
| CN107093616B (en) | 2017-04-27 | 2019-07-12 | 武汉华星光电技术有限公司 | Active matrix organic LED panel and the method for making it |
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