JP2022052835A - Substrate processing device and substrate position adjusting method - Google Patents

Abstract

To provide a substrate processing device and a substrate position adjusting method, capable of reducing eccentricity of a substrate suitably.SOLUTION: A substrate processing device includes: a spin base 21 having a holding surface 21a for holding a disk-shaped substrate W in a horizontal posture; a heater 50 for heating a peripheral edge part of the substrate W held by the holding surface 21a; a sensor 13 having a light-emitting part 70 emitting light L and a light-receiving part 71 for receiving the light L emitted from the light-emitting part 70, and measuring eccentricity E of the substrate W with respect to a rotation axial line A1 when the peripheral edge part of the substrate W held by the holding surface 21a is positioned in a detection space DS between the light-emitting part 70 and the light-receiving part 71; a centering unit for moving the substrate W on the holding surface 21a relative to the spin base 21 so that a center part C1 of the substrate W gets close to the rotation axial line A1; and a moving gas nozzle head 12 for replacing the atmosphere in the detection space DS with the atmosphere outside the detection space.SELECTED DRAWING: Figure 5

Description

The present invention relates to a substrate processing apparatus for processing a substrate and a substrate position adjusting method using the substrate processing apparatus. The substrate to be processed includes, for example, a substrate for FPD (Flat Panel Display) such as a semiconductor wafer, a liquid crystal display device and an organic EL (Electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. , Photomask substrate, ceramic substrate, solar cell substrate, etc. are included.

Patent Document 1 below discloses a substrate processing apparatus including a disk-shaped spin chuck smaller than the substrate, an annular heater along the lower peripheral edge of the substrate, and a nozzle for supplying a processing liquid to the upper surface of the substrate. .. In this substrate processing apparatus, while heating the peripheral edge portion of the substrate, the substrate processing is performed by treating the peripheral edge portion of the upper surface of the substrate with the processing liquid.

Japanese Unexamined Patent Publication No. 2017-11015

In the substrate processing apparatus disclosed in Patent Document 1, when the substrate is arranged on the spin chuck, the substrate may be eccentrically arranged.
Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate position adjusting method capable of satisfactorily reducing the amount of eccentricity of the substrate.

One embodiment of the present invention is held by a base having a holding surface for holding a disk-shaped substrate in a horizontal posture, a rotating unit for rotating the base around a vertical rotation axis, and the holding surface. It has a heating unit that heats the peripheral edge of the substrate, a light emitting section that emits light, and a light receiving section that receives the light emitted from the light emitting section, and the peripheral edge portion of the substrate held on the holding surface is the light emitting section. The eccentricity measuring unit for measuring the eccentricity of the substrate with respect to the rotation axis when located in the detection space between the light receiving portion and the substrate on the holding surface are moved with respect to the base. Provided is a substrate processing apparatus including a centering unit that brings a central portion of a substrate closer to the rotation axis, and an atmosphere replacement unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space.

In this substrate processing apparatus, when the peripheral edge portion of the substrate held on the holding surface is located between the light emitting portion and the light receiving portion, the eccentricity measuring unit measures the eccentricity of the substrate with respect to the rotation axis of the base. Based on this amount of eccentricity, the amount of eccentricity of the substrate is reduced by moving the substrate with respect to the base so that the central portion of the substrate approaches the rotation axis.
Since the peripheral edge of the substrate is heated by the heating unit, the atmosphere fluctuates in the space near the peripheral edge of the substrate. Specifically, the atmosphere having a relatively high temperature in contact with the peripheral edge of the substrate and the atmosphere around the substrate are mixed and the atmosphere is agitated. As the atmosphere is agitated, the refractive index of the space near the peripheral edge of the substrate becomes uneven.

Since the amount of eccentricity of the substrate is measured in a state where the peripheral edge of the substrate is located in the detection space between the light emitting portion and the light receiving portion, the atmosphere fluctuates in the detection space and the refractive index of the detection space becomes uneven. Occurs. If the refractive index of the space becomes uneven, the arrival position of the light emitted by the light emitting portion shifts, and the detection accuracy of the eccentricity measuring unit deteriorates.
Therefore, if the atmosphere existing in the detection space is replaced with the atmosphere outside the detection space by using the atmosphere replacement unit, the fluctuation of the atmosphere in the detection space is eliminated when the peripheral edge of the substrate is located in the detection space. can. As a result, the detection accuracy of the eccentricity measuring unit can be improved, so that the eccentricity of the substrate can be satisfactorily reduced.

In one embodiment of the invention, the atmosphere replacement unit includes a gas supply unit that supplies the gas towards the detection space. Therefore, the atmosphere in the detection space is extruded by the gas supplied from the gas supply unit and is satisfactorily replaced by the gas supplied from the gas supply unit.
In one embodiment of the invention, the heating unit comprises a heater facing the peripheral edge of the substrate held on the holding surface. The gas supply unit discharges gas toward a portion between the peripheral portion of the substrate held by the holding surface and the heater in the detection space.

The atmosphere between the peripheral edge of the substrate and the heater is likely to be heated by the heater, and a temperature difference from the surrounding atmosphere is likely to occur. Therefore, fluctuations are particularly likely to occur in the atmosphere between the peripheral edge of the substrate and the heater. Therefore, if the gas is discharged toward the space between the peripheral edge of the substrate and the heater, the atmosphere between the peripheral edge of the substrate and the heater, which causes fluctuations in the detection space, can be effectively replaced. Therefore, the fluctuation of the atmosphere in the detection space can be further eliminated.

In one embodiment of the present invention, the gas supply unit includes a plurality of gas discharge ports arranged along the opposite direction of the light emitting unit and the light receiving unit. Therefore, the gas discharged from the plurality of gas discharge ports arranged along the facing direction replaces the atmosphere not only in the vicinity of the peripheral portion of the substrate but also in the entire detection space. Therefore, the detection accuracy of the eccentricity measuring unit can be improved.

In one embodiment of the present invention, the gas supply unit includes a plurality of fixed gas nozzles each having a plurality of the gas discharge ports, and a mounting plate to which the plurality of fixed gas nozzles are commonly mounted. Then, the fixed gas nozzle includes a mounting portion to be mounted on the mounting plate and a discharge portion formed integrally with the mounting portion and provided with the gas discharge port.

A plurality of fixed gas nozzles are attached to the mounting plate, and the mounting portion and the discharging portion of the fixed gas nozzle are integrally formed. Therefore, the fixed gas nozzle can be firmly fixed to the mounting plate, and the positional relationship between the fixed gas nozzles can be firmly fixed. Therefore, the gas can be accurately supplied toward the detection space.
In one embodiment of the present invention, the gas supply unit is a moving gas nozzle head that moves together with the light emitting unit and the light receiving unit to supply gas to the detection space, and is a substrate held on the holding surface. Includes a moving gas nozzle head that moves between a detection position where the peripheral edge of the is located in the detection space and a retracted position where the peripheral edge of the substrate held on the holding surface is located outside the detection space. Therefore, the detection accuracy of the eccentricity measuring unit can be improved by discharging the gas into the detection space and replacing the air in the detection space with the gas when the moving gas nozzle is located at the detection position. As a result, the amount of eccentricity of the substrate can be satisfactorily reduced.

In one embodiment of the invention, the substrate processing apparatus further comprises a chamber that houses the base. The atmosphere replacement unit includes an air supply / exhaust unit that supplies air to the space in the chamber and exhausts air from the space in the chamber. Therefore, when the space inside the chamber is supplied and exhausted, the atmosphere inside the detection space can be satisfactorily replaced with the atmosphere outside the detection space.

In one embodiment of the present invention, the substrate processing apparatus is a guard that surrounds the substrate held on the holding surface, and the upper end portion of the guard is located above the upper surface of the substrate and the above position. Further included is a guard configured such that the upper end of the guard moves to and from a lower position located below the top surface of the substrate. The air supply / exhaust unit includes an exhaust duct that exhausts the atmosphere in the chamber, and an air flow forming unit that supplies an atmosphere into the chamber and forms an air flow toward the exhaust duct in the chamber. Then, the guard passes between the peripheral edge portion of the substrate where the airflow is held on the holding surface and the guard when the guard is located at the upper position, and the guard is located at the lower position. Occasionally, the path of the airflow is switched so that the airflow passes outside the guard.

According to this configuration, when the guard is in the upper position, the airflow toward the exhaust duct in the chamber passes between the peripheral edge of the board and the guard, and when the guard is in the lower position, the airflow is outside the guard. Pass through.
Therefore, by arranging the guard at the upper position, the atmosphere around the peripheral edge of the substrate can be replaced with the gas carried by the air flow. This makes it possible to eliminate fluctuations in the atmosphere in the detection space when the peripheral edge of the substrate is located in the detection space. As a result, the detection accuracy of the eccentricity measuring unit can be improved, so that the eccentricity of the substrate can be satisfactorily reduced.

In one embodiment of the present invention, the centering unit is configured to lift a substrate held on the holding surface and place the lifted substrate on the holding surface, and the lifter. It includes a lifter horizontal movement mechanism that brings the central portion of the substrate closer to the rotation axis by horizontally moving the lifter.
According to this configuration, the amount of eccentricity can be reduced by moving the lifter horizontally to bring the central portion of the substrate closer to the rotation axis while the substrate held on the holding surface is lifted by the lifter.

In one embodiment of the present invention, a plurality of the lifters are provided. The plurality of lifters have facing portions facing the substrate from below the substrate held on the holding surface. Then, the centering unit moves the facing portion vertically between the first position above the holding surface and the second position below the holding surface. Including further.

According to this configuration, by moving the plurality of lifters to the first position, the substrate can be lifted and supported from below by the plurality of lifters. The amount of eccentricity can be reduced by moving a plurality of lifters supporting the substrate in the horizontal direction with respect to the base to bring the center of the substrate closer to the rotation axis. After that, by moving the plurality of lifters to the second position, the substrate can be held on the holding surface.

In one embodiment of the present invention, a plurality of the lifters are provided. The first lifter having the first lifter having a first facing surface horizontally opposed to the peripheral edge portion of the substrate held by the holding surface, and the first lifter having the peripheral edge portion of the substrate held by the holding surface. 1 Includes a second lifter having a second facing surface facing horizontally from the side opposite to the facing surface. The lifter horizontal movement mechanism is a first lifter horizontal movement mechanism that moves the first lifter and the second lifter individually horizontally, and a second lifter horizontal movement that integrally moves the first lifter and the second lifter horizontally. Including the mechanism. The first facing surface and the second facing surface are inclined in the horizontal direction so as to be separated from each other as they go upward.

According to this configuration, the first horizontal movement mechanism can move the first lifter and the second lifter individually in the horizontal direction. By horizontally moving the first lifter and the second lifter so that the first lifter and the second lifter are close to each other by the first horizontal movement mechanism, the first facing surface and the second facing surface are brought to the peripheral edge of the substrate. Contact. The first facing surface and the second facing surface are inclined with respect to the horizontal direction so as to be separated from each other toward the upper side. Therefore, the first facing surface and the second facing surface can lift the substrate from the holding surface and support it from below. By moving the first lifter and the second lifter in the horizontal direction by the second lifter horizontal movement mechanism while maintaining the state in which the first facing surface and the second facing surface support the substrate from below, the central portion of the substrate is moved. It can be brought closer to the axis of rotation. As a result, the amount of eccentricity can be reduced.

Another embodiment of the present invention includes a substrate holding step of holding the substrate in a horizontal position on the holding surface of the base so that the heater faces the peripheral edge of the disk-shaped substrate, and a light emitting portion and a light receiving portion. Atmosphere replacement step of replacing the atmosphere existing in the detection space with the atmosphere outside the detection space in a state where the peripheral edge portion of the substrate is located in the detection space which is the space between the light emitting portion and the light receiving portion of the sensor. By the eccentricity measuring step and the eccentricity measuring step of detecting the eccentricity of the substrate with respect to the rotating axis by the sensor while rotating the base around the vertical axis of rotation during the execution of the atmosphere replacement step. Provided is a substrate position adjustment including an alignment step of bringing the center portion of the substrate closer to the rotation axis by moving the substrate with respect to the base according to the detected eccentricity amount.

According to this method, the fluctuation of the atmosphere in the detection space can be eliminated by replacing the atmosphere existing in the detection space between the light emitting unit and the light receiving unit outside the detection space by the atmosphere replacement step. If the amount of eccentricity of the substrate is measured by the sensor while continuing to replace the atmosphere existing in the detection space, the amount of eccentricity can be measured while the fluctuation of the atmosphere in the detection space is eliminated. As a result, the amount of eccentricity can be detected with high accuracy, so that the amount of eccentricity of the substrate can be satisfactorily reduced.

According to another embodiment of the invention, the atmosphere replacement step comprises a gas supply step of supplying the gas towards the detection space. Therefore, the atmosphere existing in the detection space is extruded by the gas supplied from the gas supply unit and is satisfactorily replaced by the gas supplied from the gas supply unit.
According to another embodiment of the present invention, the atmosphere replacement step is a guard surrounding the substrate, and an upper position where the upper end portion of the guard is located above the upper surface of the substrate and an upper end portion of the guard. In the chamber containing the guard and the base, by arranging the upper end of the guard configured to move from a lower position below the top surface of the substrate to the upper position. Includes an airflow forming step of forming an airflow flowing toward the exhaust duct through between the peripheral edge of the substrate and the guard.

According to this method, when the guard is in the upper position, the airflow toward the exhaust duct in the chamber passes between the peripheral edge of the board and the guard, and when the guard is in the lower position, the airflow is outside the guard. Pass through. Therefore, by arranging the guard in the upper position, the atmosphere around the peripheral edge of the substrate can be replaced with the gas carried by the air flow. Therefore, when the peripheral edge of the substrate is located in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentricity measuring unit can be improved, so that the eccentricity of the substrate can be satisfactorily reduced.

FIG. 1 is a schematic plan view showing an internal configuration of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus. FIG. 3 is a schematic plan view of the spin chuck provided in the processing unit and its surroundings. FIG. 4 is a cross-sectional view of the periphery of the heating unit provided in the processing unit. FIG. 5 is a schematic diagram for explaining the configuration of the moving gas nozzle head and the sensor provided in the processing unit. FIG. 6 is a cross-sectional view of the periphery of the centering unit provided in the processing unit. FIG. 7 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus. FIG. 8 is a flow chart for explaining an example of substrate processing executed by the substrate processing apparatus. FIG. 9 is a flow chart for explaining the substrate position adjusting process (step S2) in the substrate process. FIG. 10A is a schematic diagram for explaining the state of the substrate when an example of the substrate position adjustment process is being performed. FIG. 10B is a schematic diagram for explaining the state of the substrate when an example of the substrate position adjustment process is being performed. FIG. 10C is a schematic diagram for explaining the state of the substrate when an example of the substrate position adjustment process is being performed. FIG. 11 is a graph for explaining the difference in the measured values of the eccentricity amount before and after the replacement of the atmosphere in the detection space is performed. FIG. 12 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus according to the second embodiment. FIG. 13 is a schematic plan view of the processing unit according to the second embodiment. FIG. 14A is a schematic view of a plurality of fixed gas nozzles provided in the processing unit as viewed from the horizontal direction. FIG. 14B is a perspective view of the periphery of the plurality of fixed gas nozzles. FIG. 14C is a plan view of the plurality of fixed gas nozzles. FIG. 15 is a cross-sectional view of the periphery of the centering unit provided in the processing unit according to the second embodiment. FIG. 16 is a flow chart for explaining the substrate position adjusting process (step S2) in the substrate process according to the second embodiment. FIG. 17A is a schematic diagram for explaining a state of the substrate when an example of the substrate position adjusting process according to the second embodiment is performed. FIG. 17B is a schematic diagram for explaining a state of the substrate when an example of the substrate position adjusting process according to the second embodiment is performed. FIG. 17C is a schematic diagram for explaining the state of the substrate when an example of the substrate position adjusting process according to the second embodiment is performed. FIG. 18A is a schematic diagram for explaining a modified example of the atmosphere replacement step executed in the substrate processing according to the second embodiment. FIG. 18B is a schematic diagram for explaining a modified example of the atmosphere replacement step executed in the substrate processing according to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
<First Embodiment>
FIG. 1 is a schematic plan view showing an internal configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.
The substrate processing device 1 is a single-wafer processing device that processes a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate W is, for example, a semiconductor wafer.

The substrate processing apparatus 1 includes a plurality of processing units 2 for processing the substrate W with a processing liquid, a load port LP on which a carrier C accommodating a plurality of substrates W processed by the processing unit 2 is placed, and a load port. It includes transfer robots IR and CR that transfer the substrate W between the LP and the processing unit 2, and a controller 3 that controls the substrate processing device 1.
The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, a similar configuration.

Each processing unit 2 includes a spin chuck 6 that rotates the substrate W around the rotation axis A1 (vertical axis) while holding the substrate W horizontally, a processing cup 7 that surrounds the spin chuck 6 in a plan view, a spin chuck 6, and a spin chuck 6. Includes a chamber 8 for accommodating a processing cup. The rotation axis A1 is a vertical straight line passing through the central portion of the substrate W.
The chamber 8 is formed with an entrance / exit for loading / unloading the substrate W and carrying out the substrate W by the transfer robot CR. The chamber 8 is provided with a shutter unit (not shown) that opens and closes the doorway.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. FIG. 3 is a schematic plan view of the spin chuck 6 and its surroundings.
The spin chuck 6 rotates the substrate W around the vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W while holding the substrate W horizontally. The spin chuck 6 is an example of a substrate holding rotation unit that rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally. The spin chuck 6 includes a spin base 21 (base), a rotary shaft 22, a spin motor 23, and a motor housing 24.

The spin base 21 has a holding surface 21a that holds the substrate W in a horizontal posture. The holding surface 21a has, for example, a circular shape in a plan view. The holding surface 21a is, for example, the upper surface of the spin base 21. The diameter of the holding surface 21a is smaller than the diameter of the substrate W.
The rotating shaft 22 is a hollow shaft. The rotation axis 22 extends in the vertical direction along the rotation axis A1. The rotation axis A1 is a vertical axis that passes through the central portion of the holding surface 21a of the spin base 21. A spin base 21 is coupled to the upper end of the rotating shaft 22. The spin base 21 is fitted externally to the upper end of the rotating shaft 22.

A suction path 25 is inserted through the spin base 21 and the rotating shaft 22. The suction path 25 has a suction port 25a exposed from the center of the holding surface 21a of the spin base 21. The suction path 25 is connected to the suction pipe 26. The suction pipe 26 is connected to a suction unit 27 such as a vacuum pump.
The suction pipe 26 is interposed with a suction valve 28 for opening and closing the path. By opening the suction valve 28, the substrate W arranged on the holding surface 21a of the spin base 21 is sucked, and the substrate W is attracted to the holding surface 21a. The spin base 21 is an example of a substrate holding unit. The holding surface 21a is also referred to as a suction surface that sucks the substrate W. The spin chuck 6 is also referred to as a suction device that sucks the substrate W onto the suction surface.

The spin base 21 is rotated by rotating the rotating shaft 22 by the spin motor 23. As a result, the substrate W is rotated around the rotation axis A1 together with the spin base 21. The spin motor 23 is an example of a rotation unit that rotates the substrate W around the rotation axis A1. The motor housing 24 houses the spin motor 23 and the rotary shaft 22. The upper end of the rotating shaft 22 projects from the motor housing 24.

The processing cup 7 includes a plurality of guards 30 that receive the liquid scattered from the substrate W held on the holding surface 21a of the spin base 21, and a plurality of cups 31 that receive the liquid guided downward by the plurality of guards 30. In plan view, the exhaust tub 33 surrounding the plurality of guards 30 and the plurality of cups 31 and the exhaust duct 34 connected to the exhaust tub 33 are included.
This embodiment shows an example in which two guards 30 (first guard 30A and second guard 30B) and two cups 31 (first cup 31A and second cup 31B) are provided.

Each of the first cup 31A and the second cup 31B has the form of an annular groove open upward.
The first guard 30A is arranged so as to surround the spin base 21. The second guard 30B is arranged so as to surround the spin base 21 at a position closer to the spin base 21 than the first guard 30A.

The first guard 30A and the second guard 30B each have a substantially cylindrical shape. The upper end of each guard 30 is inclined inward toward the spin base 21 side (center side of the guard 30).
The center side of the guard 30 is also inside the rotation radial direction of the substrate W. The opposite side of the center side of the guard 30 is also the outside of the substrate W in the radial direction of rotation. The first guard 30A and the second guard 30B are arranged coaxially, and the center side of the guard 30 is the center side of the first guard 30A and also the center side of the second guard 30B.

The first guard 30A is arranged so as to surround the spin base 21. The second guard 30B (inner guard) is arranged so as to surround the spin base 21 on the center side of the first guard 30A with respect to the first guard 30A (outer guard).
Specifically, the first guard 30A has a first cylindrical portion 35A that surrounds the spin base 21 in a plan view, and a first extending portion 36A that extends from the upper end of the first tubular portion toward the center of the guard 30. The first extension portion 36A has an inclined portion that is inclined with respect to the horizontal direction so as to be upward toward the center side of the guard 30. The first extension portion 36A is annular in a plan view.

The second guard 30B is arranged on the center side of the guard 30 with respect to the first cylindrical portion 35A, and surrounds the spin base 21 in a plan view. The second tubular portion 35B and the guard 30 from the upper end of the second tubular portion 35B. Includes a second extension 36B extending toward the center. The second extension portion 36B faces the first extension portion 36A from below. The second extension portion 36B has an inclined portion that is inclined with respect to the horizontal direction so as to be upward toward the center side of the guard 30. The second extending portion 36B is annular in a plan view.

The first cup 31A is integrally formed with the second guard 30B, and receives the treatment liquid guided downward by the first guard 30A. The second cup 31B receives the treatment liquid guided downward by the second guard 30B. The treatment liquid received by the first cup 31A is recovered by a first treatment liquid recovery path (not shown) connected to the lower end of the first cup 31A. The treatment liquid received by the second cup 31B is collected by a second treatment liquid recovery path (not shown) connected to the lower end of the second cup 31B.

The processing unit 2 includes a guard elevating unit 37 that separately elevates and elevates the first guard 30A and the second guard 30B. The guard elevating unit 37 individually raises and lowers the first guard 30A and the second guard 30B between the lower position and the upper position.
When both the first guard 30A and the second guard 30B are located in the upper position, the processing liquid scattered from the substrate W is received by the second guard 30B. When the second guard 30B is located in the lower position and the first guard 30A is located in the upper position, the processing liquid scattered from the substrate W is received by the first guard 30A.

The upper position of each guard 30 is a position where the upper end of the guard 30 is located above the holding position (the position of the substrate W shown in FIG. 2) which is the position of the substrate W held by the spin chuck 6. The lower position of each guard 30 is a position where the upper end of the guard 30 is located below the holding position.
When both the first guard 30A and the second guard 30B are located at the lower positions, the corresponding transfer robot CR can carry the substrate W into and out of the chamber 8.

The guard elevating unit 37 includes a first guard elevating unit for elevating and lowering the first guard 30A and a second guard elevating unit for elevating and lowering the second guard 30B.
Although the configuration of the first guard elevating unit is not particularly limited, the first guard elevating unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. good.

The first guard elevating unit is, for example, coupled to a first actuator (not shown) such as a motor and the first guard 30A, and transmits the driving force applied from the first actuator to the first guard 30A to be the first guard. It includes a first elevating motion transmission mechanism (not shown) for elevating and lowering 30A. The first elevating motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

Although the configuration of the second guard elevating unit is not particularly limited, the second guard elevating unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. good.
The second guard elevating unit is, for example, coupled to a second actuator (not shown) such as a motor and the second guard 30B, and transmits the driving force applied from the second actuator to the second guard 30B to the second guard. It includes a second elevating motion transmission mechanism (not shown) for elevating and lowering 30B. The second ascending / descending motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

The processing unit 2 further includes a peripheral nozzle head 9, an air flow forming unit 10, a heating unit 11, a moving gas nozzle head 12, a sensor 13, and a centering unit 14.
The peripheral nozzle head 9 includes a plurality of peripheral nozzles 40 that supply a processing fluid to the peripheral edge portion of the upper surface of the substrate W, and a nozzle support member 41 that supports the plurality of peripheral nozzles 40. The peripheral edge portion of the upper surface of the substrate W is a region including an outer peripheral end (tip) of the substrate W and a portion of the upper surface of the substrate W near the outer peripheral end.

Each peripheral nozzle 40 is connected to a processing fluid pipe 42 that guides the processing fluid to the corresponding peripheral nozzle 40. Each processing fluid pipe 42 is interposed with a processing fluid valve 43 that opens and closes a flow path in the corresponding processing fluid pipe 42.
The plurality of peripheral nozzles 40 discharge, for example, a first peripheral chemical solution nozzle 40A for discharging a chemical solution such as APM (a mixture of ammonia and hydrogen peroxide) and a chemical solution such as hydrofluoric acid (HF: hydrofluoric acid). It includes a second peripheral chemical liquid nozzle 40B, a peripheral rinse liquid nozzle 40C for discharging a rinse liquid such as carbonated water, and a peripheral gas nozzle 40D for discharging a gas such as nitrogen gas (N ₂ ).

The chemicals discharged from the first peripheral chemical nozzle 40A and the second peripheral chemical nozzle 40B are not limited to APM and hydrofluoric acid. The chemical liquid discharged from the peripheral nozzle 40 is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH:). It may be a liquid containing at least one of tetramethylammonium hydrochloride, etc.), a surfactant, and a corrosion inhibitor. Examples of the chemical solution in which these are mixed include SPM (sulfuric acid / hydrogen peroxide mixture) and the like, in addition to APM. APM is also called SC1 (Standard Clean 1).

The rinse liquid discharged from the peripheral rinse liquid nozzle 40C is not limited to carbonated water. The rinse liquid discharged from the peripheral nozzle 40 is DIW (Deionized Water), carbonated water, electrolytic ionized water, hydrochloric acid having a diluted concentration (for example, 1 ppm or more and 100 ppm or less), and a diluted concentration (for example, 1 ppm or more). And, it may be a liquid containing at least one of ammonia water and reduced water (hydrogen water) of 100 ppm or less).

The gas discharged from the peripheral gas nozzle 40D is not limited to nitrogen gas. The gas discharged from the peripheral nozzle 40 may be air. Further, the gas discharged from the peripheral gas nozzle 40D may be an inert gas other than the nitrogen gas. The inert gas other than the nitrogen gas is, for example, a rare gas such as argon.
A head support arm 45 that supports the peripheral nozzle head 9 is connected to the nozzle support member 41. The peripheral nozzle head 9 is moved in the horizontal direction and the vertical direction by moving the head support arm 45 by the peripheral nozzle moving unit 44. The peripheral nozzle head 9 is configured to move horizontally between the center position and the home position (retracted position). When any of the plurality of processing fluid valves 43 is opened when the peripheral nozzle head 9 is located at the peripheral position between the central position and the home position, the corresponding peripheral nozzle 40 corresponds to the peripheral edge portion of the upper surface of the substrate W. The processing fluid to be supplied is supplied.

The peripheral nozzle moving unit 44 includes an arm vertical moving mechanism (not shown) for moving the head support arm 45 in the vertical direction and an arm horizontal moving mechanism (not shown) for moving the head support arm 45 in the horizontal direction. ..
The head support arm 45 may be a linear motion type or a rotary type. When the head support arm 45 is a linear motion type arm, the head support arm 45 horizontally moves in the extending direction of the head support arm 45 (direction in which the head support arm 45 extends). When the head support arm 45 is a rotary arm, it moves horizontally by rotating around a predetermined vertical axis.

The arm horizontal movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm horizontal movement mechanism is, for example, coupled to a horizontal movement actuator (not shown) such as a motor and a head support arm 45, and transmits the driving force applied from the actuator to the head support arm 45 to the head support arm 45. Includes a horizontal motion transmission mechanism (not shown) that horizontally moves the motor. Horizontal motion transmission mechanisms include, for example, a ball screw mechanism or a rack and pinion mechanism.

The arm vertical movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm vertical movement mechanism is, for example, coupled to an elevating actuator (not shown) such as a motor and the head support arm 45, and transmits the driving force applied from the elevating actuator to the head support arm 45 to elevate the head support arm 45. Includes a plumb bob transmission mechanism (not shown). The lift transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

The chamber 8 includes a substantially square cylindrical side wall 8A surrounding the spin chuck 6 and the processing cup 7, an upper wall 8B located above the spin chuck 6, and a lower wall 8C supporting the spin chuck 6.
The airflow forming unit 10 includes an FFU (fan filter unit) 10A for sending clean air (air filtered by a filter) and a straightening vane 10B arranged below the air outlet 8a opened at the upper wall 8B of the chamber 8. And include.

The airflow forming unit 10 is arranged on the air outlet 8a. The air vent 8a is provided at the upper end of the chamber 8, and the exhaust duct 34 is arranged at the lower end of the chamber 8. The upstream end 34a of the exhaust duct 34 is located inside the chamber 8, and the downstream end of the exhaust duct 34 is located outside the chamber 8.
The FFU 10A sends clean air into the chamber 8 through the air outlet 8a. The clean air supplied into the chamber 8 is sucked into the exhaust duct 34 and discharged from the chamber 8. As a result, a uniform downward flow of clean air flowing downward from the straightening vane 10B is formed in the chamber 8. Various treatments for the substrate W (the substrate treatment described later) are performed in a state where a downward flow of clean air is formed. As described above, the airflow forming unit 10 and the exhaust duct 34 constitute an air supply / exhaust unit that supplies air to the space in the chamber 8 and exhausts air from the space in the chamber 8.

The flow rate of the downward flow formed in the chamber 8 by the airflow forming unit 10 is, for example, 1.3 m ³ / min or more and 7.0 m ³ / min or less.
The heating unit 11 is a unit that heats the peripheral edge portion of the substrate W held on the holding surface 21a. The peripheral edge portion of the substrate W is a portion of the substrate W including an outer peripheral end (tip) and a portion in the vicinity of the outer peripheral end.

The heating unit 11 includes a plan-view annular heater 50 having a facing surface 50a facing the peripheral edge of the lower surface of the substrate W, and a gas delivery unit 55 that sends a gas such as nitrogen gas into the heater 50. An energizing unit 57 such as a power supply is connected to the heater 50 via a feeder line 56. The facing surface 50a faces the lower surface of the substrate W at a distance of, for example, 2 mm or more and 5 mm or less.

As shown in FIG. 3, the processing unit 2 may be provided with a lower peripheral nozzle head 17 having a nozzle for supplying a processing fluid on the lower surface of the substrate W, and in that case, the heater 50 may be provided with a lower side. A notch 50b that accommodates the peripheral nozzle head 17 and cuts out a part of the heater 50 in the circumferential direction is provided.
The lower peripheral edge nozzle head 17 includes a plurality of lower peripheral edge nozzles 75 and a nozzle support member 76 that supports the plurality of lower peripheral edge nozzles 75. Each lower peripheral edge nozzle 75 is connected to a lower processing fluid pipe 77 that guides the processing fluid to the corresponding lower peripheral edge nozzle 75. A lower treatment fluid valve 78 is interposed in each lower treatment fluid pipe 77, and the lower treatment fluid valve 78 opens and closes a flow path in the corresponding lower treatment fluid pipe 77.

The plurality of lower peripheral nozzles 75 may be configured to discharge the same liquid as the plurality of peripheral nozzles 40. Specifically, the plurality of lower peripheral edge nozzles 75 include a first lower peripheral edge chemical solution nozzle 75A that ejects a chemical solution such as APM, a second lower peripheral edge chemical solution nozzle 75B that ejects a chemical solution such as hydrofluoric acid, and carbon dioxide. It includes a lower peripheral edge rinse liquid nozzle 75C for discharging a rinse liquid such as water. Examples of the processing fluid discharged from the lower peripheral edge nozzle 75 include the same as those listed as examples of the processing fluid discharged from the peripheral edge nozzle 40 (see FIG. 2).

With reference to FIG. 2, the gas delivery unit 55 is connected to the heater 50 and has a gas supply pipe 58 that sends gas into the heater 50 and a flow path opening / closing valve 59 that opens / closes the flow path in the gas supply pipe 58. include.
FIG. 4 is a cross-sectional view of the periphery of the heating unit 11. The gas sent into the heater 50 by the gas delivery unit 55 is heated in the heating flow path 51 formed in the heater 50 and discharged from the gas discharge port 50c formed in the heater 50. The heater 50 heats the peripheral edge portion of the substrate W by the radiant heat and the heated gas discharged from the gas discharge port 50c. The flow rate of the gas discharged from the gas discharge port 50c is, for example, 40 L / min.

The gas sent to the heater 50 by the gas delivery unit 55 is not limited to nitrogen gas, but may be air. Further, this gas may be an inert gas other than the nitrogen gas.
The heater 50 includes, for example, a heater main body 52 made of silicon carbide (SiC) or ceramics, and a heating element 53 built in the heater main body 52. The heating element 53 is, for example, a resistance heating element such as a nichrome wire. In this case, when the heating element 53 is a resistance heating element, the heater 50 is a resistance type heater. The heating element 53 is provided over almost the entire circumferential direction of the heater 50. As in the example of FIG. 3, when the heater 50 is provided with the notch 50b, the heating element 53 has an end portion at a position where the notch 50b is provided in the circumferential direction of the heater 50. It is a ring. The heating element 53 generates heat when it is energized by the energizing unit 57 (see FIG. 2). Unlike the example of FIG. 3, the heater 50 may be an endd ring having an end in the circumferential direction.

The heating flow path 51 is provided on the side opposite to the substrate W with respect to the heating element 53 over substantially the entire circumferential direction of the heater 50. In this case, since the heating flow path 51 does not exist between the substrate W and the heating element 53, it becomes easy to uniformly heat the substrate W. Further, the radiant heat and heat transfer from the heating element 53 to the substrate W are not hindered by the inert gas flowing through the heating flow path 51.

Unlike the example shown in FIG. 4, the heating flow path 51 may be arranged between the substrate W and the heating element 53.
The heater main body 52 includes, for example, a lower member 52a, a middle member 52b, and an upper member 52c that are sequentially laminated from the lower side to the upper side. The heating flow path 51 is formed by a recess formed on the upper surface of the lower member 52a and a portion on the lower surface of the middle member 52b that closes the recess.

The plurality of gas discharge ports 50c are provided on the facing surface 50a of the heater 50 so as to face the lower surface of the substrate W. The plurality of gas discharge ports 50c are arranged along the circumferential direction of the heater 50 on both sides of the rotating axis A1 side of the heating element 53 and on both sides of the heating element 53 opposite to the rotating axis A1 in a plan view. .. The plurality of gas discharge ports 50c are connected to the heating flow path 51 via each of the plurality of connecting flow paths 52d formed in the upper member 52c and the middle member 52b.

The heater 50 heats the substrate W by radiating infrared heat rays H from the facing surface 50a to the lower surface of the substrate W due to the heat generated by the heating element 53. The gas supplied by the gas delivery unit 55 to the heater 50 is introduced into the heating flow path 51 and is preheated by the heating element 53 in the process of flowing through the heating flow path 51. The heated gas is discharged from the corresponding gas discharge port 50c via each connecting flow path 52d to the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50. Since the gas discharged from the gas discharge port 50c is preheated, it contributes to the heating of the substrate W.

FIG. 5 is a schematic diagram for explaining the configurations of the moving gas nozzle head 12 and the sensor 13. The moving gas nozzle head 12 includes a moving gas nozzle 60 having a discharge port 60a for discharging gas in a substantially horizontal direction, and a nozzle support member 61 for supporting the moving gas nozzle 60. A gas pipe 62 for guiding gas to the moving gas nozzle 60 is connected to the moving gas nozzle 60. The gas pipe 62 is interposed with a gas valve 63 that opens and closes a flow path in the gas pipe 62.

The gas discharged from the moving gas nozzle 60 is not limited to nitrogen gas. The gas discharged from the moving gas nozzle 60 may be air. Further, the gas discharged from the moving gas nozzle 60 may be an inert gas other than the nitrogen gas. The flow rate of the gas discharged from the moving gas nozzle 60 is, for example, 5 L / min or more and 30 L / min or less.
The sensor 13 is an example of an eccentricity measuring unit that measures the eccentricity E of the substrate W with respect to the rotation axis A1. The eccentricity E of the substrate W with respect to the rotation axis A1 is the amount of deviation of the vertical center axis A2 passing through the center portion C1 of the upper surface of the substrate W with respect to the rotation axis A1.

The sensor 13 has a light emitting unit 70 that emits light and a light receiving unit 71 that receives the light emitted from the light emitting unit 70. In this embodiment, the light emitting unit 70 and the light receiving unit 71 are supported by the nozzle support member 61. In this embodiment, the light emitting unit 70 and the light receiving unit 71 face each other in the vertical direction. Therefore, the optical axis formed by the light emitted from the light emitting unit 70 extends in the vertical direction.

The light emitting unit 70 has a light emitting surface 70a extending in the horizontal direction, and the light receiving unit 71 has a light receiving surface 71a extending in parallel with the light emitting surface 70a. The light emitting unit 70 has, for example, a light source such as an LED. In this embodiment, the light receiving unit 71 is a line sensor, and a plurality of pixels are arranged in a horizontal row on the light receiving surface 71a. In this embodiment, the light emitting surface 70a of the light emitting unit 70 and the light receiving surface 71a of the light receiving unit 71 face each other in the vertical direction. A band of light is emitted from the light emitting surface 70a of the light emitting unit 70 toward the light receiving surface 71a of the light receiving unit 71.

When the peripheral edge of the substrate W held by the holding surface 21a of the spin base 21 is located in the space (detection space DS) between the light emitting surface 70a of the light emitting unit 70 and the light receiving surface 71a of the light receiving unit 71, the spin base The eccentricity E of the substrate W with respect to 21 is measured by the sensor 13. The light receiving unit 71 outputs an electric signal indicating the amount (for example, intensity) of the received light L to the controller 3 (see FIG. 1).

The nozzle support member 61 includes a light emitting portion support portion 61a that supports the light emitting portion 70, a light receiving portion support portion 61b that supports the light receiving portion 71, and a connecting portion 61c that connects the light emitting portion support portion 61a and the light receiving portion support portion 61b. including. Therefore, the space SS in the support portion is partitioned by the light emitting portion support portion 61a, the light receiving portion support portion 61b, and the connecting portion 61c.
The connecting portion 61c extends in the opposite direction D1 of the light emitting portion 70 and the light receiving portion 71. As shown in FIG. 5, the connecting portion 61c may extend linearly in the facing direction D1, and unlike FIG. 5, the connecting portion 61c extends in the facing direction D1 in a curved shape so as to project in a direction away from the substrate W. May be.

In the moving gas nozzle 60, the discharge port 60a of the moving gas nozzle 60 is provided in the connecting portion 61c. The gas discharge direction D2 of the discharge port 60a of the moving gas nozzle 60 is an orthogonal direction (horizontal direction) with respect to the facing direction D1.
The gas discharged from the discharge port 60a of the moving gas nozzle 60 is supplied toward the space SS inside the support portion and fills the space SS inside the support portion. The detection space DS is a part of the space SS in the support portion. Therefore, the gas discharged from the discharge port 60a of the moving gas nozzle 60 easily spreads over the entire detection space DS.

In this way, the moving gas nozzle head 12 (moving gas nozzle 60) functions as a gas supply unit that supplies gas toward the detection space DS. Further, the moving gas nozzle head 12 (moving gas nozzle 60) functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere outside the detection space DS (gas discharged from the discharge port 60a).
The moving gas nozzle head 12 is moved in the horizontal direction by the gas nozzle moving unit 65. The moving gas nozzle head 12 is configured to move horizontally between the detection position (position shown in FIG. 5) and the retracted position (position shown in FIG. 1) together with the light emitting unit 70 and the light receiving unit 71. .. When the moving gas nozzle head 12 is located at the detection position, the moving gas nozzle head 12 is arranged adjacent to the heater 50 from the horizontal direction.

When the moving gas nozzle head 12 is located at the detection position, the peripheral edge portion of the substrate W held by the spin base 21 is located at the detection space DS. The moving gas nozzle head 12 can supply gas to the detection space DS by discharging gas from the discharge port 60a when it is located at the detection position.
Further, when the moving gas nozzle head 12 is located at the detection position, the discharge port 60a faces the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50 from the horizontal direction. Therefore, the moving gas nozzle head 12 can efficiently send the gas to the annular space SP1. The peripheral edge portion of the lower surface of the substrate W is a region including an outer peripheral end (tip) of the substrate W and a portion of the lower surface of the substrate W near the outer peripheral end.

When the moving gas nozzle head 12 is located at the detection position, one of the light emitting unit 70 and the light receiving unit 71 is located above the substrate W (holding position) held by the spin base 21, and the light emitting unit 70 and the light receiving unit 70 are positioned. The other end of the portion 71 is located below the holding position. In this embodiment, the light emitting unit 70 is located above the holding position, and the light receiving unit 71 is located below the holding position.

When the moving gas nozzle head 12 is located at the retracted position, the peripheral edge portion of the substrate W held by the spin base 21 is located outside the detection space DS.
The light emitted from the light emitting unit 70 when the moving gas nozzle head 12 is located at the detection position travels in the detection space DS, a part thereof is blocked by the peripheral region of the substrate W, and the other part receives light. It is incident on some pixels on the surface 71a. The controller 3 detects the position of the outer peripheral end of the substrate W in the detection space DS based on the position of the pixel that receives the light from the light emitting unit 70 among the plurality of pixels of the light receiving unit 71.

A part of the moving gas nozzle 60 is coupled to the nozzle support member 61 and inserted into a gas nozzle arm 66 extending horizontally.
The gas nozzle moving unit 65 includes a gas nozzle arm horizontal moving mechanism (not shown) that moves the gas nozzle arm 66 in the horizontal direction. The gas nozzle arm horizontal movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The gas nozzle arm horizontal movement mechanism is, for example, coupled to a horizontal movement actuator (not shown) such as a motor and a gas nozzle arm 66, and transmits the driving force applied from the actuator to the gas nozzle arm 66 to transmit the gas nozzle. It includes a horizontal motion transmission mechanism (not shown) that horizontally moves the arm 66. Horizontal motion transmission mechanisms include, for example, a ball screw mechanism or a rack and pinion mechanism.

FIG. 6 is a cross-sectional view of the periphery of the centering unit 14. The centering unit 14 is configured to move the substrate W on the holding surface 21a of the spin base 21 with respect to the spin base 21 so that the central axis A2 of the substrate W comes closer to the rotation axis A1. The centering unit 14 is arranged on the rotation axis A1 side of the heating unit 11.
A plurality of centering units 14 are configured to lift the substrate W held on the holding surface 21a and place the lifted substrate W on the holding surface 21a (three in this embodiment). Includes a plurality of lift pins 80 as lifters (see also FIG. 3) and a pin horizontal movement mechanism 90 that brings the central portion C1 of the substrate W closer to the rotation axis A1 by horizontally moving the plurality of lift pins 80. The pin horizontal movement mechanism 90 is an example of the lifter horizontal movement mechanism.

The plurality of lift pins 80 are arranged at equal intervals in the rotation direction around the rotation axis A1. The pin horizontal movement mechanism 90 integrally moves a plurality of lift pins 80 in the horizontal direction with respect to the spin base 21. The plurality of lift pins 80 are connected by an annular connecting member 81.
The centering unit 14 further includes a pin vertical movement mechanism 85 that integrally moves a plurality of lift pins 80 in the vertical direction. The pin vertical movement mechanism 85 is an example of a lifter vertical movement mechanism.

The lift pin 80 has a tip portion 80a as a facing portion facing the substrate W from below the substrate W held on the holding surface 21a. The plurality of lift pins 80 are moved between the first position (the position shown by the alternate long and short dash line in FIG. 6) and the second position (the position shown by the solid line in FIG. 6) by the pin vertical movement mechanism 85. When the lift pin 80 is located at the first position, the tip portion 80a of the lift pin 80 is located above the substrate W held on the holding surface 21a. When the lift pin 80 is located at the second position, the tip portion 80a of the lift pin 80 is located below the substrate W held by the holding surface 21a.

Although the configuration of the pin vertical movement mechanism 85 is not particularly limited, the pin vertical movement mechanism 85 includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.
The pin vertical movement mechanism 85 includes a fixed body 86, a movable body 87, and a drive mechanism 88. The movable body 87 is provided so as to be movable along the vertical direction with respect to the fixed body 86. The drive mechanism 88 exerts a driving force on the movable body 87 to move the movable body 87 in the vertical direction with respect to the fixed body 86.

The drive mechanism 88 includes, for example, a motor. For example, the movable body 87 is appropriately connected to the rotor of the motor via a link member or the like, and the movable body 87 moves in the vertical direction with respect to the fixed body 86 when the link member is displaced by the motor. do. The drive mechanism 88 moves the movable body 87 in the vertical direction with respect to the fixed body 86, so that the connecting member 81 and the plurality of lift pins 80 are integrally moved in the vertical direction.

By moving the plurality of lift pins 80 from the second position to the first position while the substrate W is placed on the holding surface 21a of the spin base 21, the substrate W is lifted by the plurality of lift pins 80. Specifically, the substrate W is handed over from the spin base 21 to the plurality of lift pins 80 while moving to the first position, and the substrate W is separated upward from the spin base 21.

The configuration of the pin horizontal movement mechanism 90 is not particularly limited, but includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.
The pin horizontal movement mechanism 90 includes a fixed body 91, a movable body 92, and a drive mechanism 93. The movable body 92 is configured to move along the horizontal direction with respect to the fixed body 91. The moving direction of the movable body 92 is a horizontal direction parallel to the reference plane P1 (see FIG. 3) which is a vertical plane passing through the rotation axis A1. The moving direction of the movable body 92 is the same as the centering direction, which is the direction in which the substrate W moves in the positioning step described later.

The drive mechanism 93 exerts a driving force on the movable body 92 for moving the movable body 92 with respect to the fixed body 91. For example, the drive mechanism 93 is a linear motor mechanism. In that case, the linear motor mechanism includes a coil attached to the stator and a permanent magnet attached to the mover, and these magnetic actions cause the mover to move horizontally with respect to the stator. The fixed body 91 is connected to the stator of the linear motor, and the movable body 92 is connected to the mover of the linear motor. The drive mechanism 93 is an example of a centering actuator that moves the substrate W horizontally with respect to the spin base 21 by moving a plurality of lift pins 80 horizontally.

The movable body 92 of the pin horizontal movement mechanism 90 is connected to the fixed body 86 of the pin vertical movement mechanism 85. Therefore, when the movable body 92 of the pin horizontal movement mechanism 90 moves in the horizontal direction, the pin vertical movement mechanism 85, the connecting member 81, and the plurality of lift pins 80 move integrally in the horizontal direction.
The plurality of lift pins 80 are moved from the second position to the first position by the pin vertical movement mechanism 85, so that the plurality of lift pins 80 lift and support the substrate W from the spin base 21. The pin horizontal movement mechanism 90 can horizontally move a plurality of lift pins 80 supporting the substrate W to adjust the position of the substrate W with respect to the spin base 21. Specifically, the amount of eccentricity E can be reduced by bringing the central axis A2 of the substrate W closer to the rotation axis A1. After adjusting the position of the substrate W with respect to the spin base 21, the plurality of lift pins 80 are moved from the first position to the second position by the pin vertical movement mechanism 85 to hold the substrate W on the holding surface 21a of the spin base 21. be able to.

The centering unit 14 may include a position measurement sensor 94 such as an encoder that detects the position of the movable body 92 of the pin horizontal movement mechanism 90 in the horizontal direction.
The centering unit 14 includes an annular accommodating member 95 accommodating a pin vertical movement mechanism 85 and a pin horizontal movement mechanism 90. A plurality of through holes 95a are formed in the accommodating member 95, and a plurality of lift pins 80 project from each of the plurality of through holes 95a toward the lower surface of the substrate W. The centering unit 14 includes a sealing member 96 provided between the peripheral edge of each through hole 95a and the corresponding lift pin 80.

FIG. 7 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls a controlled object provided in the substrate processing apparatus 1 according to a predetermined control program.
Specifically, the controller 3 may be a computer including a processor (CPU) 4 and a memory 5 in which a control program is stored. The controller 3 is configured to execute various controls for substrate processing by the processor 4 executing a control program.

In particular, the controller 3 includes a transfer robot IR, CR, a spin motor 23, a peripheral nozzle moving unit 44, a gas nozzle moving unit 65, a guard elevating unit 37, an energizing unit 57, a sensor 13, a centering unit 14, a suction valve 28, and a plurality of controllers 3. It is programmed to control the processing fluid valve 43, the gas valve 63, and the lower processing fluid valve 73.

The controller 3 receives an electric signal indicating the position of the movable body 92 detected by the position measurement sensor 94 of the centering unit 14. The controller 3 receives the electric signal output from the light receiving unit 71.
FIG. 8 is a flow chart for explaining an example of substrate processing executed by the substrate processing apparatus. FIG. 8 mainly shows the processing realized by the controller 3 executing the program.

First, the unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robots IR and CR (see FIG. 1) and passed to the spin chuck 6 (step S1). Specifically, the substrate W is placed on the holding surface 21a. By opening the suction valve 28 while the substrate W is placed on the holding surface 21a, the substrate W is held horizontally (board holding step). Before the substrate W is placed on the holding surface 21a, the flow path opening / closing valve 59 is opened and the energization of the heater 50 by the energizing unit 57 is started.

As will be described in detail later, after the substrate W is placed on the holding surface 21a, a substrate position adjusting process (step S2) for aligning the substrate W is executed. The board position adjustment process is also referred to as a centering process (centering process).
After the substrate position adjustment process is completed, a predetermined liquid process is executed. In the substrate processing apparatus 1, for example, the processing liquid is supplied from the peripheral nozzle head 9 toward the peripheral edge of the upper surface of the substrate W while heating the peripheral edge of the substrate W with the heating unit 11. APM, carbonated water, HF, and carbonated water are supplied to the peripheral edge of the upper surface of the substrate W in this order. After the supply of the treatment liquid is completed, the substrate W is rotated at high speed to dry the peripheral edge of the upper surface of the substrate W.

More specifically, by moving the peripheral nozzle head 9 to the processing position and opening the corresponding processing fluid valve 43, the chemical liquid such as APM is supplied from the first peripheral chemical liquid nozzle 40A to the peripheral portion on the upper surface of the substrate W. (First chemical solution treatment: step S3).
After that, the processing fluid valve 43 corresponding to the first peripheral chemical liquid nozzle 40A is closed, and instead, the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is opened. As a result, a rinse liquid such as carbonated water is supplied from the peripheral rinse liquid nozzle 40C to the peripheral edge portion of the upper surface of the substrate W (first rinse treatment: step S4).

After that, the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is closed, and the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is opened. As a result, a chemical solution such as hydrofluoric acid is supplied from the second peripheral chemical solution nozzle 40B to the upper peripheral edge portion of the substrate W (second chemical solution treatment: step S5). After that, the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is closed, and the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is opened. As a result, a rinse liquid such as carbonated water is supplied from the peripheral rinse liquid nozzle 40C to the peripheral edge portion of the upper surface of the substrate W (second rinse treatment: step S6).

After the second rinsing process, the processing fluid valve 43 is closed, and the spin motor 23 accelerates the rotation of the substrate W to rotate the substrate W at a high rotation speed (for example, several thousand rpm) (spin dry: step S7). .. As a result, the liquid is removed from the substrate W and the substrate W dries. When a predetermined time has elapsed from the start of high-speed rotation of the substrate W, the spin motor 23 stops rotating. As a result, the rotation of the substrate W is stopped.

After the liquid treatment on the substrate W is completed, the transfer robot CR enters the processing unit 2, scoops the processed substrate W from the spin chuck 6, and carries it out of the processing unit 2 (step S8). The substrate W is passed from the transfer robot CR to the transfer robot IR, and is housed in the carrier C by the transfer robot IR.
In the liquid treatment, the substrate W is heated by the radiant heat from the heater 50 and the supply of the heated gas. Therefore, the processing rate of the upper peripheral portion of the substrate W by the chemical solution such as APM or HF is improved. TiN and SiO ₂ existing on the peripheral edge of the upper surface of the substrate W are etched by a chemical solution such as APM or HF. By supplying the heated gas to the annular space SP1 between the heater 50 and the lower surface of the substrate W, it is possible to prevent the treatment liquid that has landed on the peripheral edge of the upper surface of the substrate from wrapping around the lower surface of the substrate.

FIG. 9 is a flow chart for explaining the substrate position adjusting process (step S2) in the substrate process. 10A to 10C are schematic views for explaining the state of the substrate when an example of the substrate position adjustment process is being performed.
In the substrate position adjustment process (step S2), the gas nozzle moving unit 65 moves the moving gas nozzle head 12 to the detection position (step S10).

The gas valve 63 is opened, and the supply of gas from the moving gas nozzle 60 to the detection space DS is started (gas supply step). As a result, as shown in FIG. 5, replacement of the atmosphere existing in the detection space DS with the gas supplied from the moving gas nozzle 60 is started (step S11). That is, the atmosphere replacement step of replacing the atmosphere existing in the detection space DS with the gas discharged from the moving gas nozzle 60 is started in the state where the peripheral edge portion of the substrate W is located in the detection space DS.

After the atmosphere replacement is started, the eccentricity E of the substrate W is measured by the sensor 13 (step S12). That is, during the execution of the atmosphere replacement step, the eccentricity measuring step of measuring the eccentricity amount E by the sensor 13 while rotating the substrate W is executed.
After the eccentricity amount E is measured by the sensor 13, the controller 3 determines whether or not the eccentricity amount E is within a predetermined threshold value (step S13: eccentricity amount determination step). The predetermined threshold is, for example, 0.08 mm. If the eccentricity E is not within the threshold value (step S13: NO), it is confirmed whether or not the substrate W is located at the reference position where the substrate W is arranged before the alignment of the substrate W is performed. The position confirmation step is performed (step S14).

In the position confirmation step, specifically, the controller 3 confirms whether or not the substrate W is located at the reference position based on the detected value of the light receiving unit 71. The reference position is a rotation phase in which the center axis A2 of the substrate W overlaps the reference surface P1 and the center axis A2 and the rotation axis A1 of the substrate W are aligned in the moving direction (centering direction) of the lift pin 80. FIG. 10A shows a state in which the central axis A2 of the substrate W does not overlap the reference plane P1.

When the substrate W is located at the reference position (step S14: YES), the spin motor 23 makes the substrate W and the spin base 21 stand still in place without rotating. When the substrate W is not located at the reference position (step S14: NO), the spin motor 23 rotates the substrate W and the spin base 21 to the reference position and makes them stand still at the reference position (step S15). For example, when the substrate W is in the state shown in FIG. 10B, the spin motor 23 rotates the substrate W and the spin base 21 clockwise by 90 °. As a result, as shown in FIG. 10B, the central portion C1 of the substrate W overlaps the reference surface P1 and the substrate W is arranged at the reference position.

With the substrate W arranged at the reference position, the alignment of the substrate W is performed by the centering unit 14 (alignment step: step S16). Specifically, the centering unit 14 moves the substrate W horizontally with respect to the spin base 21 so that the central axis A2 of the substrate W approaches the rotation axis A1 according to the eccentricity E measured by the sensor 13. Let me.

Specifically, the plurality of lift pins 80 are moved to the first position (see the position of the lift pin 80 shown by the alternate long and short dash line in FIG. 6), and the substrate W on the spin base 21 is lifted by the plurality of lift pins 80. After that, as shown in FIG. 10B, the eccentricity E of the substrate W is reduced by moving the plurality of lift pins 80 in the centering direction, and then the plurality of lift pins 80 are placed in the second position (the lift pins 80 shown by the solid line in FIG. 6). See the position of). The substrate W is placed on the holding surface 21a of the spin base 21 by lowering the plurality of lift pins 80.

As shown in FIG. 10C, the eccentricity of the substrate W is eliminated when the central axis A2 of the substrate W is sufficiently close to the rotation axis A1 of the spin base 21 by the alignment step. Eliminating the eccentricity of the substrate W does not mean that the rotation axis A1 and the central axis A2 of the substrate W are completely aligned, but the eccentricity amount E is a predetermined threshold value (for example, 0.08 mm). ) It means that it becomes the following.

After that, when the suction valve 28 is opened, the substrate W is attracted to the spin base 21 (suction step: step S17). After that, when the gas valve 63 is closed, the replacement of the atmosphere in the detection space DS is completed (step S18). That is, the atmosphere replacement step is completed. Further, the gas nozzle moving unit 65 moves the moving gas nozzle head 12 toward the retracted position (step S19). As a result, the substrate position adjustment process (step S2) is completed.

In step S13, when the eccentricity amount E is within the threshold value (step S13: NO), the steps after step S17 are executed without executing the alignment step.
After that, the unprocessed substrate W is carried into the processing unit 2, and the substrate position adjustment and the substrate processing are performed on the substrate W. From the viewpoint of the heating efficiency of the heater 50, the energization of the energization unit 57 and the supply of gas to the heater 50 of the heating unit 11 are performed after the substrate processing is completed and until the substrate position adjustment for the next substrate W is started. Will continue.

Next, the effect of replacing the atmosphere in the detection space DS will be described.
In the substrate position adjusting process, the substrate W is placed on the holding surface 21a, so that the peripheral edge portion of the substrate W is heated by the heating unit 11. Therefore, the atmosphere fluctuates in the space near the peripheral edge of the substrate W. Specifically, the atmosphere having a relatively high temperature in contact with the peripheral edge portion of the substrate W and the atmosphere around the substrate W are mixed and the atmosphere is agitated. As the atmosphere is agitated, the refractive index of the space near the peripheral edge of the substrate W becomes uneven.

When the moving gas nozzle head 12 is arranged at the detection position, the detection space DS between the light emitting portion 70 and the light receiving portion 71 of the sensor 13 is located near the peripheral edge portion of the substrate W. Therefore, the atmosphere fluctuates even in the detection space DS.
FIG. 11 is a graph for explaining the difference in the measured values of the eccentricity amount E before and after the replacement of the atmosphere in the detection space DS is performed. In FIG. 11, the horizontal axis shows the rotation phase of the substrate W, and the vertical axis shows the displacement amount of the outer peripheral edge of the substrate W.

The rotation phase means the amount of rotation with respect to the reference position when the angle of the reference position in the rotation direction of the substrate W is 0 °. The displacement amount of the outer peripheral end of the substrate W is the shift amount of the substrate W in the direction orthogonal to the facing direction of the light emitting portion 70 and the light receiving portion 71, and the outer peripheral end of the substrate W located at a predetermined reference position and each rotation. It is the distance from the outer peripheral edge of the substrate W in phase. The reference position is a position where the central axis A2 of the substrate W coincides with the rotation axis A1 of the spin base 21.

The eccentricity E of the substrate W with respect to the rotation axis A1 is the sum of the absolute value of the maximum displacement of the outer peripheral edge of the substrate W and the absolute value of the minimum displacement of the outer peripheral edge of the substrate W (total displacement DA). ) Is half (E = DA / 2).
If, unlike this substrate processing, the atmosphere in the detection space DS is not replaced, the eccentricity E is measured in a state where the atmosphere fluctuates in the detection space DS. Therefore, as shown by the broken line in FIG. 11, noise is generated in the displacement amount of the outer peripheral end of the substrate W. Therefore, the measurement accuracy of the eccentricity E is insufficient.

On the other hand, in this substrate processing, the atmosphere existing in the detection space DS is replaced by the gas supplied from the moving gas nozzle 60, so that the fluctuation of the atmosphere in the detection space DS is eliminated. Therefore, as shown by the solid line in FIG. 11, the noise of the displacement amount of the outer peripheral end of the substrate W is reduced. Therefore, the eccentricity E of the substrate W can be measured accurately.
According to the first embodiment, the atmosphere inside the detection space DS is replaced by the gas discharged from the moving gas nozzle 60 (atmosphere outside the detection space DS). Therefore, when the peripheral edge of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13 can be improved, so that the eccentricity E of the substrate W can be satisfactorily reduced.

The moving gas nozzle 60 discharges gas toward the annular space SP1 between the peripheral edge portion of the substrate W held on the holding surface 21a and the heater 50. The atmosphere existing in the annular space SP1 is likely to be heated by the heater 50, and a temperature difference from the atmosphere outside the annular space SP1 is likely to occur. Therefore, fluctuations are particularly likely to occur in the atmosphere existing in the annular space SP1. Therefore, if the moving gas nozzle 60 is configured to discharge the gas toward the annular space SP1, the atmosphere of the annular space SP1 can be effectively replaced. Therefore, the fluctuation of the atmosphere in the annular space SP1 can be eliminated.

<Second Embodiment>
FIG. 12 is a schematic diagram for explaining a configuration example of the processing unit 2 provided in the substrate processing apparatus 1P according to the second embodiment. FIG. 13 is a schematic plan view of the processing unit 2 according to the second embodiment. In FIG. 13, for convenience of explanation, the peripheral nozzle head 9 and the gas nozzle moving unit 65 are not shown.

In FIGS. 12 and 13 and FIGS. 14 to 18B described later, the same configurations as those shown in FIGS. 1 to 11 described above will be described with reference to the same reference numerals as those in FIGS. 1 and 1. Omit.
The main difference between the substrate processing apparatus 1P and the substrate processing apparatus 1 according to the first embodiment is that a plurality of fixed gas nozzles 15 and a mounting plate 16 are provided instead of the moving gas nozzle head 12, and the sensor. The point where the position of 13P is fixed and the point where the centering unit 14P is attached to the guard 30.

One of the light emitting unit 70 and the light receiving unit 71 of the sensor 13P is arranged above the holding position, and the other of the light emitting unit 70 and the light receiving unit 71 is arranged below the holding position. In the second embodiment, the facing direction D1 of the light emitting unit 70 and the light receiving unit 71 coincides with the vertical direction. In the example shown in FIG. 13, the light emitting unit 70 is arranged below the holding position, and the light receiving unit 71 is arranged above the holding position.

The light emitting unit 70 is arranged in the motor housing 24 of the spin chuck 6. The light emitting unit 70 is arranged below the transmission hole that penetrates the motor housing 24 in the vertical direction. The transmission hole of the motor housing 24 is covered with a transmission member that transmits light L of the light emitting portion 70. The light L emitted by the light emitting unit 70 is emitted to the outside of the motor housing 24 through the transparent member.

The light receiving unit 71 is arranged in the sensor housing 100 arranged in the chamber 8. The light receiving portion 71 is arranged above the transmission hole that penetrates the sensor housing 100 in the vertical direction. The transmission hole of the sensor housing 100 is closed with a transparent member that transmits light L of the light emitting portion 70. The light L emitted from the light emitting unit 70 enters the sensor housing 100 through the transparent member and irradiates the light receiving unit 71. In this embodiment, the light emitting surface 70a of the light emitting unit 70 and the light receiving surface 71a of the light receiving unit 71 face each other in the vertical direction.

In this way, the light emitting unit 70 and the light receiving unit 71 are fixed to the members (motor housing 24 and sensor housing 100) whose positions in the chamber 8 are fixed. Therefore, by holding the substrate W on the holding surface 21a, the peripheral edge portion of the substrate W is arranged in the detection space DS.
When the substrate W is not on the spin base 21, the light L emitted from the light emitting unit 70 vertically passes through the annular space SP2 formed between the inner peripheral surface of the upper end portion of the guard 30 and the outer peripheral surface of the heater 50. It reaches the light receiving unit 71 without being blocked by the guard 30 and the heater 50. When the substrate W is on the spin base 21, a part of the light L emitted from the light emitting unit 70 is blocked by the peripheral edge portion of the substrate W. Therefore, the controller 3 detects the position of the outer peripheral end of the substrate W in the detection space DS based on the position of the pixel that receives the light L from the light emitting unit 70 among the plurality of pixels of the light receiving unit 71.

The mounting plate 16 is mounted and fixed to the side wall 8A of the chamber 8.
The plurality of fixed gas nozzles 15 are commonly mounted on a single mounting plate 16. The plurality of fixed gas nozzles 15 are arranged above the holding position of the substrate W along the facing direction D1 of the light emitting unit 70 and the light receiving unit 71.
A gas pipe 110 for guiding a gas such as nitrogen gas is connected to each fixed gas nozzle 15 to the fixed gas nozzle 15. A gas valve 111 is interposed in each gas pipe 110, and each gas valve 111 opens and closes a flow path in the corresponding gas pipe 110. Each of the plurality of fixed gas nozzles 15 has a plurality of gas discharge ports 15a. The plurality of gas discharge ports 15a are arranged along the facing direction D1.

The plurality of fixed gas nozzles 15 are a first fixed gas nozzle 15A that supplies gas to a portion near the peripheral edge of the substrate W in the detection space DS, and a portion in the space around the peripheral edge of the substrate W in the detection space DS. It includes a second fixed gas nozzle 15B for supplying gas. A plurality of second fixed gas nozzles 15B (two in the example of FIG. 12) may be provided.
The plurality of fixed gas nozzles 15 are an example of a gas supply unit that supplies gas to the detection space DS. Further, the fixed gas nozzle 15 functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere outside the detection space DS (gas discharged from the gas discharge port 15a).

FIG. 14A is a schematic view of a plurality of fixed gas nozzles 15 as viewed from the horizontal direction. FIG. 14B is a perspective view of the periphery of the plurality of fixed gas nozzles 15. FIG. 14C is a plan view of the plurality of fixed gas nozzles 15.
As shown in FIG. 14A, the gas discharge direction D3 of the gas discharge port 15a of the second fixed gas nozzle 15B is a direction orthogonal to the facing direction D1. The gas discharge direction D4 of the gas discharge port 15a of the first fixed gas nozzle 15A is an inclination direction inclined with respect to the horizontal plane HS. In this embodiment, since the facing direction D1 is a vertical direction, the direction orthogonal to the facing direction D1 is the horizontal direction. The angle θ formed by the straight line SL extending in the discharge direction D4 and the horizontal plane HS is, for example, 18 °.

Since the first fixed gas nozzle 15A is arranged above the holding position of the substrate W, the discharge direction D4 moves downward from the gas discharge port 15a of the first fixed gas nozzle 15A toward the detection space DS. It is inclined with respect to the horizontal plane HS so as to face it. Specifically, the gas discharge direction D4 of the gas discharge port 15a of the first fixed gas nozzle 15A is a direction toward the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50. Therefore, the first fixed gas nozzle 15A can efficiently send the gas to the annular space SP1.

As shown in FIG. 14B, each fixed gas nozzle 15 extends along the mounting plate 16 and is integrally formed with the mounting portion 115 mounted on the mounting plate 16 and is provided with a gas discharge port 15a. Includes part 116.
The mounting portion 115 is provided with an insertion hole 115a through which a fastening member 118 such as a screw is inserted (see also FIG. 14C). The fixed gas nozzle 15 is commonly attached to the attachment plate 16 by the fastening member 118.

As shown in FIG. 13, the discharge portion 116 extends from the mounting portion 115 in a direction in which the mounting portion 115 is inclined with respect to the extending direction (direction along the side wall 8A) in a plan view. In a plan view, the discharge portion 116 and the mounting portion 115 extend horizontally so as not to be orthogonal to each other.
The gas discharge port 15a is provided at the tip of the discharge portion 116. The discharge unit 116 extends toward the rotation axis A1, and the sensor 13P is arranged between the discharge unit 116 and the rotation axis A1 (see FIG. 13). Therefore, the gas discharged from the discharge unit 116 is sent to the detection space DS of the sensor 13P.

The discharge portion 116 of the first fixed gas nozzle 15A has a flat surface 116a on which the gas discharge port 15a is formed and is inclined with respect to the facing direction D1. The discharge portion 116 of the second fixed gas nozzle 15B has a flat surface 116b on which the gas discharge port 15a is formed and along the facing direction D1.
As shown in FIG. 14C, a gas pipe 110 is connected to the discharge portion 116 of each fixed gas nozzle 15. Specifically, an internal flow path 117 having one end connected to the gas discharge port 15a is formed inside the discharge unit 116, and the flow path in the gas pipe 110 is connected to the other end of the internal flow path 117. ing.

FIG. 15 is a cross-sectional view of the periphery of the centering unit 14P according to the second embodiment.
The centering unit 14P has two lifters 120 and two lifters 120 configured to lift the substrate W held on the holding surface 21a and place the lifted substrate W on the holding surface 21a. Includes a lifter horizontal movement mechanism 90P that brings the central portion C1 of the substrate W closer to the rotation axis A1 by horizontally moving the substrate W.

Each lifter 120 faces the peripheral edge of the substrate W on the spin base 21 from the horizontal direction. The lifter horizontal movement mechanism 90P includes a first lifter horizontal movement mechanism 122 that moves horizontally in the centering direction individually, and a second lifter horizontal movement mechanism 123 that integrally moves the two lifters 120 horizontally in the centering direction.
The two lifters 120 include a first lifter 120A and a second lifter 120B that horizontally faces the peripheral edge of the substrate W on the spin base 21 from the side opposite to the first lifter 120A. Each lifter 120 has a similar configuration.

The two lifters 120 are arranged at two positions where the angles around the rotation axis A1 differ by 180 °. Each lifter 120 has a facing surface 127 that faces horizontally in the centering direction. The facing surface 127 of the first lifter 120A is referred to as a first facing surface 127A, and the facing surface 127 of the second lifter 120B is referred to as a second facing surface 127B. The first facing surface 127A and the second facing surface 127B are inclined in the horizontal direction so as to be separated from each other as they go upward.

Each lifter 120 is moved between the lift position (the position shown by the alternate long and short dash line in FIG. 15) and the retracted position (the position shown by the solid line in FIG. 15) by the first lifter horizontal movement mechanism 122. The lift position is a position where the tip end (end in the centering direction) of the facing surface 127 of the lifter 120 is located on the rotation axis A1 side of the outer peripheral end of the substrate W on the holding surface 21a of the spin base 21. The retracted position is a position where the facing surface 127 of the lifter 120 is separated from the outer peripheral end of the substrate W on the holding surface 21a of the spin base 21.

Since the first facing surface 127A and the second facing surface 127B are inclined in the horizontal direction so as to be separated from each other as they go upward, in the process of moving the first lifter 120A and the second lifter 120B to the lift position. The first lifter 120A and the second lifter 120B lift the substrate W on the spin base 21.
Specifically, after the first facing surface 127A and the second facing surface 127B come into contact with the outer peripheral end of the substrate W, the first lifter 120A and the second lifter 120B come closer to each other and lift the substrate W from the spin base 21. Then, the first lifter 120A and the second lifter 120B reach the lift position for lifting the substrate W from the spin base 21 to a predetermined height.

In the process of moving the first lifter 120A and the second lifter 120B located at the lift position to the retracted position, the substrate W is placed on the holding surface 21a of the spin base 21.
The first lifter horizontal movement mechanism 122 includes two air cylinders 125. The two air cylinders 125 are arranged at two positions where the angles around the rotation axis A1 differ by 180 °. The two air cylinders 125 are arranged at the same height. The two air cylinders 125 are horizontally opposed to each other. The spin base 21 is arranged between two air cylinders 125 in a plan view.

The air cylinder 125 includes a cylinder body 125a having an internal space, a piston that divides the internal space of the cylinder body 125a into two chambers separated in the axial direction of the air cylinder 125, and an axial direction of the air cylinder 125 from the end face of the cylinder body 125a. Includes a rod 125b that projects in the axial direction of the air cylinder 125 and moves along with the piston. The lifter 120 is attached to the rod 125b. The two air cylinders 125 are an example of a lifter actuator.

The lifter 120 moves with respect to the cylinder body 125a in the axial direction of the air cylinder 125 together with the rod 125b. The axial direction of the air cylinder 125 coincides with the centering direction.
The second lifter horizontal movement mechanism 123 includes a slide bracket 140 that supports two air cylinders 125, a linear motor 141 that moves the slide bracket 140 in the centering direction, and a linear guide 142 that guides the slide bracket 140 in the centering direction. include. The linear motor 141 is an example of a centering actuator that moves the substrate W horizontally with respect to the spin base 21 by moving the two lifters 120 horizontally.

The slide bracket 140 includes a base plate 140a arranged below each of the two air cylinders 125 and one or more joint arms 140b connecting the two base plates 140a. The linear guide 142 is provided between the two main bases 143 that each support the two base plates 140a and the corresponding base plates 140a.

As the slide bracket 140 moves horizontally, the two air cylinders 125 supported by the slide bracket 140 and the two lifters 120 supported by the two air cylinders 125 have the same direction, speed, and speed as the slide bracket 140. Move horizontally according to the amount of movement.
The centering unit 14P includes a unit housing 145 that houses two air cylinders 125 and a base plate 140a (see FIG. 13). The linear motor 141 and the linear guide 142 are housed in two unit housings 145, respectively. The lifter 120 is located outside the unit housing 145.

The unit housing 145 is mounted from above on the first extension portion 36A of the first guard 30A and is supported by the first extension portion 36A. Therefore, the centering unit 14 moves up and down together with the first guard 30A. Therefore, when the centering unit 14 operates, the first guard 30A needs to be arranged at a substrate position adjusting position where the facing surfaces 127 of the two lifters 120 face each other from the horizontal direction to the peripheral edge portion of the substrate W. The board position adjustment position is a position between the upper position and the lower position. The guard elevating unit 37 (first guard elevating unit) is an example of a lifter vertical movement mechanism for elevating and lowering two lifters 120.

The substrate W on the spin base 21 is lifted by the two lifters 120 and separated from the holding surface 21a of the spin base 21 in the process of moving the two lifters 120 so as to approach each other and moving them to a predetermined lift position.
When the linear motor 141 moves the slide bracket 140 in the centering direction while the two lifters 120 horizontally support the substrate W, the substrate W supported by the two lifters 120 is the same as the slide bracket 140. Move horizontally in direction, speed, and amount of movement. As a result, the central axis A2 of the substrate W moves with respect to the rotation axis A1. Therefore, by adjusting the amount of movement of the slide bracket 140, the central axis A2 of the substrate W can be brought closer to the rotation axis A1.

The substrate processing apparatus 1P can execute the same substrate processing as the substrate processing apparatus 1 according to the first embodiment. Specifically, the substrate processing of FIG. 8 can be executed by the substrate processing apparatus 1P.
However, the operation of each member in the substrate position adjustment process (step S2) is slightly different. Specifically, in the substrate processing apparatus 1P, since the fixed gas nozzle 15 is provided instead of the moving gas nozzle 60, the step related to the movement of the nozzle is omitted as shown in FIG.

FIG. 16 is a flow chart for explaining the substrate position adjustment (step S2) in the substrate processing. Specifically, since the position of the sensor 13P in the chamber 8 is fixed, the step related to the movement of the sensor is omitted.
More specifically, it is as follows. After the substrate W is placed on the holding surface 21a of the spin base 21, a plurality of gas valves 111 are opened.

By placing the substrate W on the holding surface 21a, the peripheral edge portion of the substrate W is located in the detection space DS. When the plurality of gas valves 111 are opened, as shown in FIG. 14A described above, the supply of gas from the plurality of fixed gas nozzles 15 to the detection space DS is started (gas supply step).
The gas supplied from the fixed gas nozzle 15 initiates the replacement of the atmosphere existing in the detection space DS (step S11). That is, the atmosphere replacement step of replacing the atmosphere existing in the detection space DS with the gas discharged from the plurality of fixed gas nozzles 15 is started in the state where the peripheral edge portion of the substrate W is located in the detection space DS.

After the atmosphere replacement is started, the eccentricity of the substrate W is measured by the sensor 13P (step S12). That is, during the execution of the atmosphere replacement step, the eccentricity measuring step of measuring the eccentricity amount E by the sensor 13 while rotating the substrate W is executed.
After the eccentricity amount E is measured by the sensor 13P, the controller 3 determines whether or not the eccentricity amount E is within a predetermined threshold value (step S13: eccentricity amount determination step). The predetermined threshold is, for example, 0.08 mm. If the eccentricity E is not within the threshold value (step S13: NO), it is confirmed whether or not the substrate W is located at the reference position where the substrate W is arranged before the alignment of the substrate W is performed. The position confirmation step is performed (step S14).

Specifically, the controller 3 confirms whether or not the substrate W is located at the reference position based on the detected value of the light receiving unit 71. The reference position is a rotation phase in which the center axis A2 of the substrate W overlaps the reference surface P1 and the center axis A2 and the rotation axis A1 of the substrate W are aligned in the moving direction (centering direction) of the lifter 120.
When the substrate W is located at the reference position (step S14: YES), the spin motor 23 makes the substrate W and the spin base 21 stand still in place without rotating. When the substrate W is not located at the reference position (step S14: NO), the spin motor 23 rotates the substrate W and the spin base 21 to the reference position and makes them stand still at the reference position (step S15). As a result, as shown in FIG. 17A, the central axis A2 of the substrate W overlaps the reference surface P1, and the substrate W is arranged at the reference position.

With the substrate W arranged at the reference position, the alignment of the substrate W is performed by the centering unit 14 (alignment step: step S16). Specifically, the centering unit 14P moves the substrate W horizontally with respect to the spin base 21 so that the central axis A2 of the substrate W approaches the rotation axis A1 based on the eccentricity E measured by the sensor 13P. Let me.

Specifically, as shown in FIG. 17B, the substrate W on the spin base 21 is lifted by the first lifter 120A and the second lifter 120B by moving the first lifter 120A and the second lifter 120B to the lift position. After that, as shown in FIG. 17C, the eccentricity E of the substrate W is reduced by integrally moving the first lifter 120A and the second lifter 120B in the centering direction. After that, the substrate W is placed on the holding surface 21a of the spin base 21 by horizontally moving the first lifter 120A and the second lifter 120B to the retracted position.

By the alignment step, the central axis A2 of the substrate W is sufficiently close to the rotation axis A1 of the spin base 21, and the eccentricity of the substrate W is eliminated.
After that, when the suction valve 28 is opened, the substrate W is attracted to the spin base 21 (suction step: step S17). After that, when the gas valve 63 is closed, the replacement of the atmosphere in the detection space DS is completed (step S18). That is, the atmosphere replacement step is completed. As a result, the substrate position adjustment process (step S2) is completed.

According to the second embodiment, the atmosphere existing in the detection space DS is replaced by the gas discharged from the fixed gas nozzle 15 (atmosphere outside the detection space DS). Therefore, when the peripheral edge of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, so that the eccentricity E of the substrate W can be satisfactorily reduced.

As described above, fluctuations are particularly likely to occur in the atmosphere existing in the annular space SP1. The first fixed gas nozzle 15A discharges gas toward the annular space SP1 between the peripheral edge portion of the substrate W held by the holding surface 21a and the heater 50. Therefore, the atmosphere of the annular space SP1 can be effectively replaced. Therefore, the fluctuation of the atmosphere in the annular space SP1 can be eliminated.

According to the second embodiment, the plurality of fixed gas nozzles 15 as the gas supply unit include a plurality of gas discharge ports 15a arranged along the facing direction D1 between the light emitting unit 70 and the light receiving unit 71. Therefore, the gas discharged from the plurality of gas discharge ports 15a arranged along the facing direction D1 replaces the atmosphere not only in the vicinity of the peripheral edge portion of the substrate W but also in the entire detection space SP. Therefore, the detection accuracy of the sensor 13P can be improved.

According to the second embodiment, a plurality of fixed gas nozzles 15 are attached to the mounting plate 16, and the mounting portions 115 and the discharge portions 116 of the plurality of fixed gas nozzles 15 are integrally formed. Therefore, the plurality of fixed gas nozzles 15 can be firmly fixed to the mounting plate 16, and the positional relationship between the fixed gas nozzles 15 can be firmly fixed. Therefore, the gas can be accurately supplied toward the detection space DS.

18A and 18B are schematic views for explaining a modified example of the atmosphere replacement step executed in the substrate processing according to the second embodiment.
In the substrate processing apparatus 1P according to the second embodiment, even if the atmosphere in the detection space DS is replaced by the airflow F formed by the airflow forming unit 10 without discharging the gas from the fixed gas nozzle 15. good. Specifically, when the first guard 30A is located at the upper position, the airflow F passes between the peripheral edge portion of the substrate W and the inner peripheral end portion (upper end portion) of the first guard 30A, and the first guard 30A passes through. The first guard 30A is configured to switch the path of the airflow F so that the airflow F passes outside the first guard 30A when located in the lower position.

More specifically, as shown in FIG. 18A, when the first guard 30A is located at the upper position, the gap between the substrate W and the peripheral edge portion and the inner peripheral end portion of the first guard 30A becomes wider. The airflow F mainly passes between the inner peripheral end portion of the first guard 30A and the peripheral edge portion of the substrate W, and reaches the upstream end 34a of the exhaust duct 34 (airflow forming step). On the other hand, as shown in FIG. 18B, when the first guard 30A is located in the lower position, the gap between the peripheral edge portion of the substrate W and the inner peripheral end portion of the first guard 30A is in the upper position. It is smaller than when it is located in. Therefore, the airflow F mainly passes through the gap between the first guard 30A and the exhaust tub 33 and reaches the upstream end 34a of the exhaust duct 34.

By arranging the first guard 30A at the upper position in this way, an air flow F flowing toward the exhaust duct 34 is formed in the chamber 8 through between the peripheral edge portion of the substrate W and the first guard 30A. .. As a result, the atmosphere near the peripheral edge of the substrate W can be replaced with the gas carried by the air flow F. That is, the air supply / exhaust unit composed of the airflow forming unit 10 and the exhaust duct 34 functions as an atmosphere replacement unit. Therefore, when the peripheral edge of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, so that the centering unit 14 can satisfactorily reduce the eccentricity E of the substrate W.

Further, between the exhaust tub 33 and the first guard 30A, when the first guard 30A is located at the upper position, the path through which the airflow F passes between the exhaust tub 33 and the first guard 30A is narrowed. The width adjusting mechanism 160 may be provided. The path width adjusting mechanism 160 has, for example, a first flange 161 projecting from the first tubular portion 35A of the first guard 30A to the side opposite to the center side of the guard 30, and projecting from the exhaust tub 33 toward the center side of the guard 30. It is composed of a second flange 162 and a second flange 162. The first flange 161 and the second flange 162 face each other in the vertical direction, and the closer the first guard 30A is to the upper position, the narrower the gap between the first flange 161 and the second flange 162.

<Other embodiments>
The present invention is not limited to the embodiments described above, and can be implemented in still other embodiments.
For example, in the above-described embodiment, the substrate processing devices 1 and 1P include transfer robots IR and CR, a processing unit 2, and a controller 3. However, the substrate processing devices 1 and 1P may be configured only by the processing unit 2. In other words, the processing unit 2 may be an example of a substrate processing apparatus.

Further, in the above-described embodiment, in the sensors 13 and 13P, the facing direction D1 of the light emitting unit 70 and the light receiving unit 71 is along the vertical direction. However, the facing direction D1 does not necessarily have to be along the vertical direction and may be inclined with respect to the vertical direction. In other words, the high axis may extend in a direction inclined with respect to the vertical direction.
Further, also in the first embodiment, when the first guard 30A is located at the upper position, the airflow F passes between the peripheral edge portion of the substrate W and the inner peripheral end portion of the first guard 30A, and the first guard 30A passes through. The first guard 30A may be configured to switch the path of the airflow F so that the airflow F passes outside the first guard 30A when located in the lower position. For that purpose, it is necessary that the first guard 30A is provided with a movement allowable hole so that the moving gas nozzle head 12 can move to the detection position when the first guard 30A is located at the upper position.

Further, it is possible to apply the centering unit 14 to the second embodiment, and conversely, the first guard 30A is provided with a movement allowable hole that allows the moving gas nozzle head 12 to move to the detection position. If so, the centering unit 14P can be applied to the first embodiment.
Further, in the second embodiment, instead of the plurality of fixed gas nozzles 15, a single fixed gas nozzle provided with a plurality of gas discharge ports 15a may be provided. Further, in the first embodiment, the moving gas nozzle head 12 may be provided with a plurality of discharge ports 60a arranged in the opposite direction D1.

Further, in the second embodiment, the first facing surface 127A and the second facing surface 127B are inclined in the horizontal direction so as to be separated from each other as they go upward. However, the first facing surface 127A and the second facing surface 127B may be vertically facing. In this case, the substrate W can be lifted from the spin base 21 by moving the first guard 30A upward while the substrate W is gripped from both sides in the horizontal direction by the two lifters 120.

Further, the gas discharged from the moving gas nozzle 60 and the gas discharged from the first fixed gas nozzle 15A do not have to form an air flow toward the annular space SP1, and are detected due to the heating of the heater 50. It suffices if the occurrence of fluctuations in the atmosphere in the space DS can be suppressed.
In the above-described embodiment, each configuration may be schematically shown by blocks, but the shape, size, and positional relationship of each block do not indicate the shape, size, and positional relationship of each configuration.

In addition, various changes can be made within the scope of the claims.

1: Board processing device 1P: Board processing device 2: Processing unit (board processing device)
8: Chamber 10: Airflow formation unit (air supply / exhaust unit, atmosphere replacement unit)
11: Heating unit 12: Moving gas nozzle head (gas supply unit, atmosphere replacement unit)
13: Sensor (eccentricity measurement unit)
13P: Sensor (eccentricity measurement unit)
14: Centering unit 14P: Centering unit 15: Fixed gas nozzle (gas supply unit, atmosphere replacement unit)
15a: Gas discharge port 16: Mounting plate 21: Spin base (base)
21a: Holding surface 30: Guard 30A: First guard 34: Exhaust duct (air supply / exhaust unit, atmosphere replacement unit)
60a: Discharge port 70: Light emitting unit 71: Light receiving unit 80: Lift pin (lifter)
80a: Tip (opposing part)
85: Pin vertical movement mechanism (lifter vertical movement mechanism)
90: Pin horizontal movement mechanism (lifter horizontal movement mechanism)
90P: Lifter horizontal movement mechanism 115: Mounting part 116: Discharge part 120: Lifter 120A: First lifter 120B: Second lifter 122: First lifter horizontal movement mechanism 123: Second lifter horizontal movement mechanism 127: Facing surface 127A: First 1 facing surface 127B: 2nd facing surface A1: rotating axis A2: central axis (center of the substrate)
C1: Central part D1: Opposite direction DS: Detection space L: Optical SP1: Circular space (space between the peripheral edge of the substrate and the heater)
W: Substrate

Claims (14)

A base with a holding surface that holds the disk-shaped substrate in a horizontal position,
A rotating unit that rotates the base around a vertical axis of rotation,
A heating unit that heats the peripheral edge of the substrate held on the holding surface,
It has a light emitting part that emits light and a light receiving part that receives the light emitted from the light emitting part, and the peripheral edge portion of the substrate held on the holding surface is in the detection space between the light emitting part and the light receiving part. An eccentricity measuring unit that measures the eccentricity of the substrate with respect to the rotation axis when it is positioned, and an eccentricity measuring unit.
A centering unit that moves the substrate on the holding surface with respect to the base to bring the center of the substrate closer to the rotation axis.
A substrate processing apparatus including an atmosphere replacement unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space. The substrate processing apparatus according to claim 1, wherein the atmosphere replacement unit includes a gas supply unit that supplies the gas toward the detection space. The heating unit comprises a heater facing the peripheral edge of the substrate held on the holding surface.
The substrate processing apparatus according to claim 2, wherein the gas supply unit discharges gas toward the space between the peripheral edge portion of the substrate held on the holding surface and the heater. The substrate processing apparatus according to claim 2 or 3, wherein the gas supply unit includes a plurality of gas discharge ports arranged along a direction opposite to the light emitting unit and the light receiving unit. The gas supply unit includes a plurality of fixed gas nozzles having each of the plurality of gas discharge ports, and a mounting plate to which the plurality of fixed gas nozzles are commonly mounted.
The substrate processing apparatus according to claim 4, wherein the fixed gas nozzle includes a mounting portion mounted on the mounting plate and a discharge portion integrally formed with the mounting portion and provided with the gas discharge port. The gas supply unit is a moving gas nozzle head that moves together with the light emitting unit and the light receiving unit to supply gas to the detection space, and the peripheral portion of the substrate held on the holding surface is in the detection space. 2. Board processing equipment. Further equipped with a chamber for accommodating the base
The substrate processing apparatus according to any one of claims 1 to 6, wherein the atmosphere replacement unit includes an air supply / exhaust unit that supplies air to a space in the chamber and exhausts air from the space in the chamber. A guard that surrounds the substrate held on the holding surface, and the upper end of the guard is located above the upper surface of the substrate and the upper end of the guard is located below the upper surface of the substrate. Includes a guard that is configured to move to and from the lower position to
The air supply / exhaust unit includes an exhaust duct that exhausts the atmosphere in the chamber, and an air flow forming unit that supplies an atmosphere into the chamber and forms an air flow toward the exhaust duct in the chamber.
The guard passes between the peripheral edge of the substrate where the airflow is held by the holding surface and the guard when the guard is located in the upper position, and when the guard is located in the lower position. The substrate processing apparatus according to claim 7, wherein the path of the airflow is switched so that the airflow passes outside the guard. By horizontally moving the lifter and the lifter configured such that the centering unit lifts the substrate held on the holding surface and mounts the lifted substrate on the holding surface. The substrate processing apparatus according to any one of claims 1 to 8, further comprising a lifter horizontal movement mechanism that brings the central portion of the substrate closer to the rotation axis. A plurality of the lifters are provided, and the lifter is provided.
The plurality of lifters have facing portions facing the substrate from below the substrate held on the holding surface.
The centering unit further provides a lifter vertical movement mechanism for vertically moving the facing portion between a first position above the holding surface and a second position below the holding surface. The substrate processing apparatus according to claim 9, which includes. A plurality of the lifters are provided, and the lifter is provided.
The first lifter having the first lifter having a first facing surface horizontally opposed to the peripheral edge portion of the substrate held by the holding surface, and the first lifter having the peripheral edge portion of the substrate held by the holding surface. 1 Includes a second lifter having a second facing surface facing horizontally from the opposite side to the facing surface.
The lifter horizontal movement mechanism is a first lifter horizontal movement mechanism that moves the first lifter and the second lifter individually horizontally, and a second lifter horizontal movement that integrally moves the first lifter and the second lifter horizontally. Including the mechanism
The substrate processing apparatus according to claim 9, wherein the first facing surface and the second facing surface are inclined in the horizontal direction so as to be separated from each other as they go upward. A substrate holding process in which the substrate is held in a horizontal position on the holding surface of the base so that the heater faces the peripheral edge of the disk-shaped substrate.
With the peripheral edge of the substrate located in the detection space, which is the space between the light emitting part and the light receiving part of the sensor having the light emitting part and the light receiving part, the atmosphere existing in the detection space is the atmosphere outside the detection space. Atmosphere replacement process to replace with
During the execution of the atmosphere replacement step, the eccentricity measuring step of detecting the eccentricity of the substrate with respect to the rotating axis while rotating the base around the vertical axis of rotation by the sensor.
A substrate position adjusting method including a positioning step of moving the substrate with respect to the base in accordance with the eccentricity detected by the eccentricity measuring step to bring the central portion of the substrate closer to the rotation axis. .. The substrate position adjusting method according to claim 12, wherein the atmosphere replacement step includes a gas supply step of supplying the gas toward the detection space. The atmosphere replacement step is a guard surrounding the substrate, and the upper end of the guard is located above the upper surface of the substrate and the upper end of the guard is located below the upper surface of the substrate. By arranging the guard configured to move to and from the lower position in the upper position, the guard passes between the peripheral edge of the substrate and the guard in the chamber accommodating the guard and the base. The substrate position adjusting method according to claim 12 or 13, comprising an airflow forming step of forming an airflow flowing toward an exhaust duct.

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