KR20220041022A - Substrate treating apparatus, and method for adjusting substrate position - Google Patents

Abstract

A substrate processing device includes: a base having a holding surface holding a disk-shaped substrate in a horizontal posture; a rotating unit rotating the base around a vertical axis of rotation; a heating unit heating the peripheral portion of the substrate held on the holding surface; an eccentricity measuring unit having a light emitting portion that emits light and a light receiving portion that receives light emitted from the light emitting portion, and measuring the eccentricity of the substrate relative to the rotation axis when the peripheral portion of the substrate held on the holding surface is located in a detection space between the light emitting portion and the light receiving portion; a centering unit moving the substrate on the holding surface relative to the base to make the center of the substrate close to the rotation axis; and an atmosphere replacement unit, which replaces the atmosphere existing in the detection space with the atmosphere outside the detection space. The present invention is capable of reducing eccentricity of a substrate suitably.

Description

SUBSTRATE TREATING APPARATUS, AND METHOD FOR ADJUSTING SUBSTRATE POSITION

This application corresponds to Patent Application No. 2020-159314 filed with the Japan Patent Office on September 24, 2020, and the entire disclosure of this application is incorporated herein by reference.

The present invention relates to a substrate processing apparatus for processing a substrate, and a substrate position adjustment method using the substrate processing apparatus. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a flat panel display such as a liquid crystal display device and an organic EL (Electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, etc. A substrate, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like are included.

Japanese Patent Laid-Open No. 2017-11015 discloses a substrate processing apparatus including a spin chuck in the shape of a disk smaller than a substrate, an annular heater along the periphery of the lower surface of the substrate, and a nozzle for supplying a processing liquid to the upper surface of the substrate. . In this substrate processing apparatus, a substrate processing is performed in which the periphery of the upper surface of the substrate is treated with a processing liquid while heating the periphery of the substrate.

In the substrate processing apparatus disclosed in Japanese Patent Laid-Open No. 2017-11015, when the substrate is placed on the spin chuck, the substrate may be eccentrically arranged.

Then, one object of this invention is to provide the substrate processing apparatus which can reduce favorably the amount of eccentricity of a board|substrate, and a board|substrate position adjustment method.

One embodiment of the present invention includes a base having a holding surface for holding a disk-shaped substrate in a horizontal position, a rotation unit for rotating the base around a vertical rotation axis, and a substrate held on the holding surface. A heating unit for heating a peripheral portion, a light emitting portion for emitting light, and a light receiving portion for receiving the light emitted from the light emitting portion, wherein the peripheral portion of the substrate held on the holding surface is located in a detection space between the light emitting portion and the light receiving portion an eccentricity measurement unit for measuring an amount of eccentricity of the substrate with respect to the rotational axis, and a centering unit for moving the substrate on the holding surface with respect to the base to bring the central portion of the substrate closer to the rotational axis; Provided is an atmosphere replacement unit that replaces an atmosphere existing in the detection space with an atmosphere outside the detection space.

In this substrate processing apparatus, when the periphery of the substrate held on the holding surface is positioned between the light emitting unit and the light receiving unit, the eccentricity measurement unit measures the eccentricity of the substrate with respect to the rotation axis of the base. Based on this eccentricity, the centering unit moves the substrate with respect to the base so that the central portion of the substrate approaches the rotation axis, whereby the eccentricity of the substrate is reduced.

Since the periphery of the substrate is heated by the heating unit, fluctuations in the atmosphere occur in the space in the vicinity of the periphery of the substrate. Specifically, the atmosphere with a relatively high temperature in contact with the periphery of the substrate and the atmosphere around it are mixed and the atmosphere is stirred. A non-uniformity arises in the refractive index of the space in the vicinity of the periphery of a board|substrate by stirring an atmosphere.

Since the amount of eccentricity of the substrate is measured in a state where the peripheral edge of the substrate is positioned in the detection space between the light emitting portion and the light receiving portion, fluctuations in the atmosphere occur in the detection space as well, and the refractive index of the detection space becomes non-uniform. When the refractive index of space is non-uniform, the arrival position of the light emitted by the light emitting unit is shifted, and the detection accuracy of the eccentricity measurement unit is deteriorated.

Therefore, if the atmosphere existing in the detection space is replaced with an atmosphere outside the detection space by using the atmosphere replacement unit, fluctuations in the atmosphere in the detection space can be eliminated when the peripheral portion of the substrate is located in the detection space. As a result, since the detection precision of the eccentricity measurement unit can be improved, the eccentricity amount of the substrate can be reduced favorably.

In one embodiment of the present invention, the atmosphere replacement unit includes a gas supply unit that supplies the gas toward the detection space. Therefore, the atmosphere in the detection space is pushed out by the gas supplied from the gas supply unit and is favorably replaced by the gas supplied from the gas supply unit.

In one embodiment of the present invention, the heating unit includes a heater facing the peripheral portion of the substrate held by the holding surface. The gas supply unit discharges gas toward a portion in the detection space between the periphery of the substrate held on the holding surface and the heater.

The atmosphere between the periphery of the substrate and the heater is easily heated by the heater, and a temperature difference with the surrounding atmosphere is likely to occur. Therefore, fluctuations are particularly likely to occur in the atmosphere between the periphery of the substrate and the heater. Therefore, when the gas is discharged toward the space between the periphery of the substrate and the heater, it is possible to effectively replace the atmosphere between the periphery of the substrate and the heater, which causes fluctuations in the detection space. Therefore, fluctuations in the atmosphere in the detection space can be further eliminated.

In one embodiment of the present invention, the gas supply unit includes a plurality of gas discharge ports arranged in a direction opposite to the light emitting unit and the light receiving unit. Therefore, not only the atmosphere in the vicinity of the periphery of the substrate, but also the entire detection space is replaced by the gas discharged from the plurality of gas discharge ports arranged in the opposite direction. Therefore, the detection accuracy of the eccentricity measurement unit can be improved.

In one embodiment of the present invention, the gas supply unit includes a plurality of fixed gas nozzles each having a plurality of the gas discharge ports, and a mounting plate to which the plurality of fixed gas nozzles are mounted in common. The fixed gas nozzle includes a mounting portion mounted on the mounting plate, and a discharge unit integrally formed with the mounting portion and provided with the gas discharge port.

A plurality of fixed gas nozzles are mounted on the mounting plate, and the mounting portion and the discharging portion of the fixed gas nozzle are integrally formed. For this reason, the fixed gas nozzle can be firmly fixed with respect to the mounting plate, and the positional relationship of the fixed gas nozzles can be firmly fixed. Accordingly, it is possible to accurately supply the gas toward the detection space.

In one embodiment of the present invention, the gas supply unit is a moving gas nozzle head for supplying gas to the detection space by moving together with the light emitting unit and the light receiving unit, wherein the peripheral portion of the substrate held by the holding surface is and a moving gas nozzle head that moves between a detection position located in the detection space and a retracted position in which a periphery of the substrate held on the holding surface is located outside the detection space. Therefore, when the moving gas nozzle is positioned at the detection position, the detection accuracy of the eccentricity measurement unit can be improved by discharging gas to the detection space to replace the air in the detection space with the gas. Thereby, the amount of eccentricity of a board|substrate can be reduced favorably.

In one embodiment of this invention, the said substrate processing apparatus is further equipped with the chamber which accommodates the said base. The atmosphere replacement unit includes a supply/exhaust unit configured to supply air to and exhaust air from the space within the chamber. Therefore, when supplying and evacuating the space in the chamber, the atmosphere in the detection space can be favorably replaced by the atmosphere outside the detection space.

In one embodiment of the present invention, the substrate processing apparatus is a guard surrounding the substrate held by the holding surface, and an upper position where the upper end of the guard is located above the upper surface of the substrate and the upper end of the guard It further includes a guard configured to move between lower positions positioned below the upper surface of the substrate. The supply/exhaust unit includes an exhaust duct for exhausting the atmosphere in the chamber, and an airflow forming unit for supplying an atmosphere into the chamber to form an airflow toward the exhaust duct in the chamber. And, the guard passes between the guard and the periphery of the substrate held by the holding surface when the guard is positioned at the upper position, and the air flow when the guard is positioned at the lower position diverts the path of the airflow so that it passes through the outside of the guard.

According to this configuration, when the guard is positioned at the upper position, the airflow toward the exhaust duct in the chamber passes between the periphery of the substrate and the guard, and when the guard is positioned at the lower position, the airflow passes through the outside of the guard. do.

Therefore, by arranging the guard at the upper position, the atmosphere around the periphery of the substrate can be replaced with the gas carried by the airflow. Thereby, when the peripheral part of a board|substrate is located in a detection space, the fluctuation|fluctuation of the atmosphere in a detection space can be eliminated. As a result, since the detection precision of the eccentricity measurement unit can be improved, the eccentricity amount of the substrate can be reduced favorably.

In one embodiment of the present invention, the centering unit includes a lifter configured to lift the substrate held on the holding surface or to place the lifted substrate on the holding surface, and the lifter. and a lifter horizontal movement mechanism for bringing the central portion of the substrate closer to the rotation axis by horizontally moving it.

According to this configuration, the amount of eccentricity can be reduced by moving the lifter horizontally to bring the center portion of the substrate closer to the rotation axis while the substrate held on the holding surface is lifted by the lifter.

In one embodiment of the present invention, a plurality of the lifters are provided. The plurality of lifters have opposing portions facing the substrate below the substrate held on the holding surface. The centering unit further includes a lifter vertical movement mechanism that vertically moves the opposing portion between a first position higher than the holding surface and a second position lower than the holding surface.

According to this configuration, by moving the plurality of lifters to the first position, the plurality of lifters can lift the substrate and support it from below. The amount of eccentricity can be reduced by moving the plurality of lifters supporting the substrate in the horizontal direction with respect to the base to bring the center portion of the substrate closer to the rotation axis. Thereafter, the substrate can be held on the holding surface by moving the plurality of lifters to the second position.

In one embodiment of the present invention, a plurality of the lifters are provided. A plurality of the lifters include a first lifter having a first opposing surface opposite to a periphery of the substrate held on the holding surface in a horizontal direction, and the first opposing surface at a periphery of the substrate held on the holding surface; includes a second lifter having a second opposing surface opposite in the horizontal direction on the opposite side. The lifter horizontal movement mechanism includes a first lifter horizontal movement mechanism for individually horizontally moving the first lifter and the second lifter, and a second lifter horizontal movement mechanism for horizontally moving the first lifter and the second lifter integrally. includes instruments. The first opposing surface and the second opposing surface are inclined with respect to the horizontal direction so as to be spaced apart from each other as they face upward.

According to this configuration, the first horizontal movement mechanism can individually move the first lifter and the second lifter in the horizontal direction. By moving the first lifter and the second lifter in the horizontal direction so that the first lifter and the second lifter come closer to each other by the first horizontal movement mechanism, the first opposing surface and the second opposing surface abut against the periphery of the substrate. The first opposing face and the second opposing face are inclined with respect to the horizontal direction so as to be spaced apart from each other as they face upward. Therefore, the 1st opposing surface and the 2nd opposing surface can lift a board|substrate from a holding surface and support it from below. By moving the first lifter and the second lifter in the horizontal direction by the second lifter horizontal movement mechanism while maintaining the state in which the first opposed surface and the second opposed surface support the substrate from below, the central portion of the substrate is aligned with the rotation axis. can be accessed Thereby, the amount of eccentricity can be reduced.

Another embodiment of the present invention includes a substrate holding step of holding the substrate in a horizontal position on a holding surface of a base such that a heater faces a peripheral portion of a disk-shaped substrate, and the light emitting unit of a sensor having a light emitting unit and a light receiving unit and an atmosphere replacement step of replacing an atmosphere existing in the detection space with an atmosphere outside the detection space in a state in which the peripheral edge of the substrate is positioned in a detection space that is a space between the light receiving units; An eccentricity measurement step of detecting the amount of eccentricity of the substrate with respect to the rotation axis by the sensor while rotating the base around a vertical rotation axis, and according to the amount of eccentricity detected by the eccentricity measurement step, the substrate is placed on the base It provides a substrate positioning method comprising a positioning step of moving the central portion of the substrate close to the rotation axis by moving the substrate.

According to this method, fluctuations in the atmosphere in the detection space can be eliminated by replacing the atmosphere existing in the detection space between the light emitting portion and the light receiving portion with an atmosphere outside the detection space by the atmosphere replacement step. If the amount of eccentricity of the substrate is measured by the sensor while replacing the atmosphere existing in the detection space, the amount of eccentricity can be measured in a state in which fluctuations in the atmosphere in the detection space are eliminated. Thereby, since the amount of eccentricity can be accurately detected, the amount of eccentricity of a board|substrate can be reduced favorably.

According to another embodiment of the present invention, the atmosphere replacement step includes a gas supply step of supplying the gas toward the detection space. Therefore, the atmosphere existing in the detection space is pushed out by the gas supplied from the gas supply unit and is favorably replaced by the gas supplied from the gas supply unit.

According to another embodiment of the present invention, the atmosphere replacement step is a guard surrounding the substrate, wherein the upper end of the guard is positioned above the upper surface of the substrate, and the upper end of the guard is higher than the upper surface of the substrate. By disposing an upper end of a guard configured to move between lower positions positioned below in the upper position, an exhaust duct passes through between the periphery of the substrate and the guard in a chamber accommodating the guard and the base and an airflow forming process of forming an airflow flowing toward the

According to this method, when the guard is located in the upper position, the airflow toward the exhaust duct in the chamber passes between the periphery of the substrate and the guard, and when the guard is located in the lower position, the airflow passes through the outside of the guard do. Therefore, by disposing the guard at the upper position, the atmosphere around the periphery of the substrate can be replaced with the gas carried by the airflow. Therefore, when the peripheral part of the board|substrate is located in a detection space, the fluctuation|fluctuation of the atmosphere in a detection space can be eliminated. As a result, since the detection precision of the eccentricity measurement unit can be improved, the eccentricity amount of the substrate can be reduced favorably.

The above-mentioned or still another objective in this invention, a characteristic, and an effect will become clear by description of embodiment described next with reference to an accompanying drawing.

1 is a schematic plan view showing an internal configuration of a substrate processing apparatus according to a first embodiment of the present invention.
2 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus.
3 is a schematic plan view of a spin chuck provided in the processing unit and its surroundings.
4 is a sectional view of a periphery of a heating unit provided in the processing unit.
5 is a schematic diagram for explaining the configuration of a moving gas nozzle head and a sensor provided in the processing unit.
6 is a cross-sectional view of a periphery of a centering unit provided in the processing unit.
7 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus.
8 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.
9 is a flowchart for explaining a substrate position adjustment process (step S2) in the substrate process.
10A-10C are schematic diagrams for demonstrating the mode of a board|substrate when an example of the said board|substrate position adjustment process is performed.
11 is a graph for explaining the difference in the measured values of the amount of eccentricity before and after replacement of the atmosphere in the detection space is performed.
12 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus according to the second embodiment.
13 is a schematic plan view of a processing unit according to the second embodiment.
14A is a schematic diagram of a plurality of fixed gas nozzles provided in the processing unit as viewed from the horizontal direction.
14B is a perspective view of the periphery of the plurality of fixed gas nozzles.
14C is a plan view of a plurality of the fixed gas nozzles.
15 is a cross-sectional view of a periphery of a centering unit provided in the processing unit according to the second embodiment.
16 is a flowchart for explaining a substrate position adjustment process (step S2) in the substrate process according to the second embodiment.
17A to 17C are schematic diagrams for explaining the state of the substrate when an example of the substrate position adjustment process according to the second embodiment is being performed.
18A and 18B are schematic diagrams for explaining a modified example of the atmosphere replacement step performed in the substrate processing according to the second embodiment.

<First embodiment>

1 is a schematic plan view showing the internal configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.

The substrate processing apparatus 1 is a single-wafer type apparatus which processes the board|substrates W, such as a silicon wafer, one by one. In this embodiment, the board|substrate W is a disk-shaped board|substrate. The substrate W is, for example, a semiconductor wafer.

In the substrate processing apparatus 1 , a plurality of processing units 2 that treat a substrate W with a processing liquid, and a carrier C accommodating a plurality of substrates W processed by the processing unit 2 are mounted. The load port LP to be used, the transfer robots IR and CR for transferring the substrate W between the load port LP and the processing unit 2 , and the controller 3 for controlling the substrate processing apparatus 1 . ) is included.

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2 . The plurality of processing units 2 have, for example, the same configuration.

Each processing unit 2 includes a spin chuck 6 that rotates the substrate W around a rotation axis A1 (vertical axis) while keeping the substrate W horizontal, and a spin chuck 6 in plan view. ), a processing cup (7) surrounding the spin chuck (6) and a chamber (8) housing the processing cup. The rotation axis A1 is a vertical straight line passing through the central portion of the substrate W.

The chamber 8 is provided with the entrance/exit for carrying in the board|substrate W or carrying out the board|substrate W by the conveyance robot CR. The chamber 8 is equipped with a shutter unit (not shown) which opens and closes this entrance/exit.

2 : is a schematic diagram for demonstrating the structural example of the processing unit 2 . 3 is a schematic plan view of the spin chuck 6 and its periphery.

The spin chuck 6 rotates the substrate W around a vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W while maintaining the substrate W horizontally. The spin chuck 6 is an example of a substrate holding rotation unit that rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally. The spin chuck 6 includes a spin base 21 (base), a rotating shaft 22 , a spin motor 23 , and a motor housing 24 .

The spin base 21 has a holding surface 21a for holding the substrate W in a horizontal posture. The holding surface 21a is circular in planar view, for example. The holding surface 21a is, for example, an upper surface of the spin base 21 . The diameter of the holding surface 21a is smaller than the diameter of the substrate W.

The rotating shaft 22 is a hollow shaft. The rotating shaft 22 extends in the vertical direction along the rotating axis A1. The rotation axis A1 is a vertical axis passing through the central portion of the holding surface 21a of the spin base 21 . A spin base 21 is coupled to the upper end of the rotation shaft 22 . The spin base 21 is externally fitted with respect to the upper end of the rotation shaft 22 .

A suction path 25 is inserted through the spin base 21 and the rotation shaft 22 . The suction path 25 has a suction port 25a exposed from the center of the holding surface 21a of the spin base 21 . The suction path 25 is connected to the suction pipe 26 . The suction pipe 26 is connected to the suction unit 27, such as a vacuum pump.

A suction valve 28 for opening and closing the path is interposed in the suction pipe 26 . By opening the suction valve 28 , the substrate W disposed on the holding surface 21a of the spin base 21 is sucked, so that the substrate W is attracted to the holding surface 21a. The spin base 21 is an example of a substrate holding unit. The holding surface 21a is also referred to as a suction surface on which the substrate W is adsorbed. The spin chuck 6 is also referred to as an adsorption device for adsorbing the substrate W to the adsorption surface.

As the rotation shaft 22 is rotated by the spin motor 23 , the spin base 21 is rotated. Thereby, the substrate W is rotated around the rotation axis A1 together with the spin base 21 . The spin motor 23 is an example of a rotation unit that rotates the substrate W around the rotation axis A1 . The motor housing 24 accommodates the spin motor 23 and the rotation shaft 22 . The upper end of the rotating shaft 22 protrudes from the motor housing 24 .

The processing cup 7 includes a plurality of guards 30 that receive a liquid scattered from the substrate W held on the holding surface 21a of the spin base 21 , and a plurality of guards 30 downward by the plurality of guards 30 . A plurality of cups 31 receiving the guided liquid, an exhaust pipe 33 surrounding the plurality of guards 30 and the plurality of cups 31 in plan view, and an exhaust duct connected to the exhaust pipe 33 . (34).

In this embodiment, two guards 30 (first guard 30A and second guard 30B) and two cups 31 (first cup 31A and second cup 31B) are provided. An example of installation is shown.

Each of the first cup 31A and the second cup 31B has a shape of an annular groove open upward.

The first guard 30A is disposed so as to surround the spin base 21 . The second guard 30B is disposed so as to surround the spin base 21 at a position closer to the spin base 21 than the first guard 30A.

The first guard 30A and the second guard 30B each have a substantially cylindrical shape. The upper end of each guard 30 is inclined inward so as to face the spin base 21 side (center side of the guard 30).

The center side of the guard 30 is also the inside of the rotation radial direction of the board|substrate W. The side opposite to the center side of the guard 30 is also the outer side in the rotational radial direction of the board|substrate W. As shown in FIG. The first guard 30A and the second guard 30B are coaxially arranged, and the central side of the guard 30 is the central side of the first guard 30A, and the central side of the second guard 30B. It is also

The first guard 30A is disposed so as to surround the spin base 21 . The second guard 30B (inner guard) is disposed so as to surround the spin base 21 from the center side of the first guard 30A rather than the first guard 30A (outer guard).

Specifically, the first guard 30A includes a first cylindrical portion 35A surrounding the spin base 21 when viewed in a plan view, and a first cylindrical portion extending from the upper end of the first cylindrical portion toward the center of the guard 30 . 1 It has 36A of extension installation parts. The first extended installation part 36A has an inclined part inclined with respect to the horizontal direction so as to face upward as it goes toward the center side of the guard 30 . 36A of 1st extension installation parts are annular in planar view.

The second guard 30B includes a second cylindrical portion 35B that is disposed on the central side of the guard 30 rather than the first cylindrical portion 35A and surrounds the spin base 21 in a plan view; and a second extension installation portion 36B extending from the upper end of the second cylindrical portion 35B toward the center side of the guard 30 . The second extension portion 36B faces the first extension portion 36A from below. The second extension installation part 36B has an inclined part inclined with respect to the horizontal direction so as to face upward as it goes toward the center side of the guard 30 . The 2nd extension part 36B is annular in planar view.

The first cup 31A is integrally formed with the second guard 30B, and receives the processing liquid guided downward by the first guard 30A. The second cup 31B receives the processing liquid guided downward by the second guard 30B. The processing liquid received by the first cup 31A is recovered by a first processing liquid recovery path (not shown) connected to the lower end of the first cup 31A. The processing liquid received by the second cup 31B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cup 31B.

The processing unit 2 includes a guard raising/lowering unit 37 for lifting and lowering the first guard 30A and the second guard 30B separately. The guard raising/lowering unit 37 individually raises/lowers the 1st guard 30A and the 2nd guard 30B between a lower position and an upper position.

When both the first guard 30A and the second guard 30B are positioned at the upper positions, the processing liquid scattered from the substrate W is received by the second guard 30B. When the second guard 30B is positioned at the lower position and the first guard 30A is positioned at the upper position, the processing liquid scattered from the substrate W is received by the first guard 30A.

In the upper position of each guard 30, the upper end of the guard 30 is higher than the holding position (position of the substrate W shown in FIG. 2) which is the position of the substrate W held by the spin chuck 6 is the location where it is located. The lower position of each guard 30 is a position where the upper end of the guard 30 is located below the holding position.

When both the first guard 30A and the second guard 30B are positioned at the lower positions, the corresponding transfer robot CR loads the substrate W into the chamber 8 or the substrate from within the chamber 8 . (W) can be taken out.

The guard elevating unit 37 includes a first guard elevating unit elevating the first guard 30A and a second guard elevating elevating unit elevating the second guard 30B.

Although the configuration of the first guard lifting unit is not particularly limited, the first guard lifting unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack-and-pinion mechanism. do.

The first guard lifting unit, for example, is coupled to a first actuator (not shown) such as a motor and the first guard 30A, and transmits a driving force applied from the first actuator to the first guard 30A and a first lifting motion transmission mechanism (not shown) for lifting and lowering the first guard 30A. The first lifting motion transmitting mechanism includes, for example, a ball screw mechanism or a rack-and-pinion mechanism.

Although the configuration of the second guard lifting unit is not particularly limited, the second guard lifting unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack-and-pinion mechanism. do.

The second guard lifting unit, for example, is coupled to a second actuator (not shown) such as a motor and the second guard 30B, and transmits a driving force applied from the second actuator to the second guard 30B. and a second lifting motion transmission mechanism (not shown) for raising and lowering the second guard 30B. The second lifting motion transmitting mechanism includes, for example, a ball screw mechanism or a rack-and-pinion mechanism.

The processing unit 2 includes a peripheral nozzle head 9 , an airflow forming unit 10 , a heating unit 11 , a moving gas nozzle head 12 , a sensor 13 , and a centering unit 14 . further includes.

The peripheral nozzle head 9 includes a plurality of peripheral nozzles 40 for supplying a processing fluid to the peripheral portion of the upper surface of the substrate W, and a nozzle support member 41 for supporting the plurality of peripheral nozzles 40 . . The periphery of the upper surface of the substrate W is a region including the outer peripheral end (tip) of the substrate W and a portion in the vicinity of the outer peripheral end in the upper surface of the substrate W.

Each of the peripheral nozzles 40 is connected to a processing fluid pipe 42 that guides the processing fluid to the corresponding peripheral nozzle 40 . Each processing fluid pipe 42 is interposed with a processing fluid valve 43 that opens and closes a flow path in the corresponding processing fluid pipe 42 .

The plurality of peripheral nozzles 40 are, for example, a first peripheral chemical liquid nozzle 40A that discharges a chemical liquid such as APM (ammonia/hydrogen peroxide aqueous mixture), and a chemical liquid such as hydrofluoric acid (HF: hydrofluoric acid) a second peripheral chemical liquid nozzle 40B, a peripheral rinse liquid nozzle 40C for discharging a rinsing liquid such as carbonated water, and a peripheral gas nozzle 40D for discharging a gas such as nitrogen gas (N ₂ ).

The chemical liquid discharged from the first peripheral chemical liquid nozzle 40A and the second peripheral chemical liquid nozzle 40B is not limited to APM or hydrofluoric acid. The chemical liquid discharged from the peripheral nozzle 40 is, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide solution, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: The liquid containing at least 1 of tetramethylammonium hydroxide etc.), surfactant, and a corrosion inhibitor may be sufficient. As an example of the chemical|medical solution which mixed these, SPM (sulfuric acid/hydrogen peroxide mixture: sulfuric acid hydrogen peroxide mixture) etc. other than APM are mentioned. APM is also called SC1 (Standard Clean 1).

The rinse liquid discharged from the peripheral rinse liquid nozzle 40C is not limited to carbonated water. The rinse liquid discharged from the peripheral nozzle 40 is DIW (deionized water), carbonated water, electrolytic ionized water, hydrochloric acid water having a dilution concentration (eg, 1 ppm or more and 100 ppm or less), dilution concentration (eg, The liquid containing at least 1 of 1 ppm or more and 100 ppm or less of ammonia water and reduced water (hydrogen water) may be sufficient.

The gas discharged from the peripheral gas nozzle 40D is not limited to nitrogen gas. The gas discharged from the peripheral nozzle 40 may be air. In addition, the gas discharged from the peripheral gas nozzle 40D may be an inert gas other than nitrogen gas. The inert gas other than nitrogen gas is, for example, a noble gas such as argon.

A head support arm 45 for supporting the peripheral nozzle head 9 is coupled to the nozzle support member 41 . The peripheral nozzle head 9 is moved in the horizontal direction and the vertical direction by moving the head support arm 45 by the peripheral nozzle moving unit 44 . The peripheral nozzle head 9 is configured to move in the horizontal direction between the central position and the home position (retraction position). When any one of the plurality of processing fluid valves 43 is opened when the peripheral nozzle head 9 is positioned at the peripheral position between the central position and the home position, the periphery of the upper surface of the substrate W from the corresponding peripheral nozzle 40 . A processing fluid corresponding to is supplied.

The peripheral nozzle moving unit 44 includes an arm vertical movement mechanism (not shown) for moving the head support arm 45 in the vertical direction, and an arm horizontal movement mechanism (not shown) for moving the head support arm 45 in the horizontal direction. not included).

The head support arm 45 may be of a direct acting type or a rotation type. When the head support arm 45 is a direct-acting arm, the head support arm 45 horizontally moves in the extension installation direction of the head support arm 45 (the direction in which the head support arm 45 extends). When the head support arm 45 is a rotating arm, it moves horizontally by rotating around a predetermined vertical axis.

The arm horizontal movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack-and-pinion mechanism. The arm horizontal movement mechanism is coupled to, for example, an actuator (not shown) for horizontal movement, such as a motor, and the head support arm 45 , and transmits a driving force applied from the actuator to the head support arm 45 to the head and a horizontal motion transmission mechanism (not shown) for horizontally moving the support arm 45 . The horizontal motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

The arm vertical movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack-and-pinion mechanism. The arm vertical movement mechanism is coupled to, for example, a lifting actuator (not shown) such as a motor and the head support arm 45, and transmits a driving force applied from the lifting actuator to the head support arm 45 to support the head. and a lifting motion transmission mechanism (not shown) for raising and lowering the arm 45 . The lifting motion transmission mechanism includes, for example, a ball screw mechanism or a rack-and-pinion mechanism.

The chamber 8 has a substantially rectangular cylindrical side wall 8A surrounding the spin chuck 6 and the processing cup 7 , an upper wall 8B disposed above the spin chuck 6 , and the spin chuck and a lower wall 8C supporting (6).

The airflow forming unit 10 includes an FFU (fan filter unit) 10A that sends clean air (air filtered by a filter), and an air outlet 8a opened in the chamber 8 upper wall 8B. and a rectifying plate 10B disposed below.

The airflow forming unit 10 is disposed on the air outlet 8a. The air outlet 8a is provided at the upper end of the chamber 8 , and the exhaust duct 34 is arranged at the lower end of the chamber 8 . The upstream end 34a of the exhaust duct 34 is disposed in the chamber 8 , and the downstream end of the exhaust duct 34 is disposed outside the chamber 8 .

The FFU 10A sends clean air into the chamber 8 through the air outlet 8a. The clean air supplied into the chamber 8 is sucked into the exhaust duct 34 and discharged from the chamber 8 . Thereby, a uniform downward flow of clean air flowing downward from the baffle plate 10B is formed in the chamber 8 . Various processes (substrate process mentioned later) with respect to the board|substrate W are performed in the state in which the downflow of clean air is formed. In this way, the airflow forming unit 10 and the exhaust duct 34 constitute a supply/exhaust unit that supplies air to the space in the chamber 8 and exhausts the air from the space in the chamber 8 .

The flow rate of the downflow formed in the chamber 8 by the airflow formation unit 10 is 1.3 m< ³ >/min or more, and is 7.0 m< ³ >/min or less, for example.

The heating unit 11 is a unit which heats the periphery of the board|substrate W hold|maintained by the holding surface 21a. The periphery of the substrate W is a portion of the substrate W including an outer peripheral end (tip) and a portion in the vicinity of the outer peripheral end.

The heating unit 11 sends gas such as nitrogen gas into the heater 50 and the heater 50 having an annular shape in plan view having an opposing surface 50a opposite to the periphery of the lower surface of the substrate W. and a gas delivery unit 55 that A power supply unit 57 such as a power supply is connected to the heater 50 via a power supply line 56 . The opposing surface 50a faces the lower surface of the substrate W at a distance of, for example, 2 mm or more and 5 mm or less.

As shown in FIG. 3 , the processing unit 2 may be provided with a lower peripheral nozzle head 17 having a nozzle for supplying a processing fluid to the lower surface of the substrate W, and in that case, the heater 50 , the lower peripheral nozzle head 17 is accommodated, and a cutout 50b is formed to cut a part of the heater 50 in the circumferential direction.

The lower peripheral nozzle head 17 includes a plurality of lower peripheral nozzles 75 and a nozzle support member 76 supporting the plurality of lower peripheral nozzles 75 . Each lower peripheral nozzle 75 is connected to a lower processing fluid pipe 77 , which guides the processing fluid to the corresponding lower peripheral nozzle 75 . A lower processing fluid valve 78 is interposed in each lower processing fluid pipe 77 , and the lower processing fluid valve 78 opens and closes a flow path in the corresponding lower processing fluid pipe 77 .

The plurality of lower peripheral nozzles 75 may be configured to discharge the same liquid as the plurality of peripheral nozzles 40 . Specifically, the plurality of lower peripheral nozzles 75 include a first lower peripheral chemical liquid nozzle 75A for discharging a chemical liquid such as APM, and a second lower peripheral chemical liquid nozzle 75B for ejecting a chemical liquid such as hydrofluoric acid; and a lower peripheral rinse liquid nozzle 75C for discharging a rinse liquid such as carbonated water. Examples of the processing fluid discharged from the lower peripheral nozzle 75 include the same ones listed as examples of the processing fluid discharged from the peripheral nozzle 40 (refer to FIG. 2 ).

Referring to FIG. 2 , the gas delivery unit 55 is connected to the heater 50 and opens and closes a gas supply pipe 58 for supplying gas into the heater 50 and a flow path in the gas supply pipe 58 . and a flow path opening/closing valve (59).

4 is a cross-sectional view of the periphery of the heating unit 11 . The gas blown into the heater 50 by the gas delivery unit 55 is heated in the heating passage 51 formed in the heater 50 , and discharged from the gas discharge port 50c formed in the heater 50 . The heater 50 heats the periphery of the substrate W by radiant heat and the heating gas discharged from the gas discharge port 50c. The flow rate of the gas discharged from the gas discharge port 50c is, for example, 40 L/min.

The gas supplied to the heater 50 by the gas delivery unit 55 is not limited to nitrogen gas, and may be air. Moreover, inert gas other than nitrogen gas may be sufficient as this gas.

The heater 50 includes, for example, a heater body 52 made of silicon carbide (SiC) or ceramics, and a heating element 53 incorporated in the heater body 52 . The heating element 53 is a resistance heating element, such as a nichrome wire, for example. In this case, when the heating element 53 is a resistance heating element, the heater 50 is a resistance heater. The heat generating element 53 is provided over substantially the entire circumferential direction of the heater 50 . As in the example of FIG. 3 , when the cutout 50b is formed in the heater 50 , the heating element 53 has an end at the position where the cutout 50b is formed in the circumferential direction of the heater 50 . It is an illusion. The heat generating element 53 generates heat by being energized by the energizing unit 57 (refer to FIG. 2 ). Unlike the example of FIG. 3 , the heater 50 may be an annular edged end having an end in the circumferential direction.

The heating flow path 51 is provided over substantially the entire circumferential direction of the heater 50 on the opposite side to the substrate W with respect to the heat generating element 53 . In this case, since the heating flow path 51 does not exist between the board|substrate W and the heating element 53, it becomes easy to heat the board|substrate W uniformly. Moreover, radiant heat and heat transfer from the heating element 53 to the substrate W are not inhibited by the inert gas flowing through the heating flow passage 51 .

Unlike the example shown in FIG. 4 , the heating flow path 51 may be provided between the substrate W and the heat generating element 53 .

The heater body part 52 is provided with the lower member 52a, the intermediate member 52b, and the upper member 52c laminated|stacked in order from the downward direction toward the upper side, for example. The heating flow path 51 is formed by a recess formed in the upper surface of the lower member 52a and a portion blocking the recess in the lower surface of the intermediate member 52b.

The plurality of gas discharge ports 50c are provided on the opposing surface 50a of the heater 50 so as to face the lower surface of the substrate W. As shown in FIG. The plurality of gas discharge ports 50c are on both sides of the rotational axis A1 side from the heating element 53 and the side opposite to the rotational axis A1 from the heating element 53 in a plan view of the heater 50 It is arranged along the circumferential direction. The plurality of gas discharge ports 50c are connected to the heating passage 51 through each of the plurality of connection passages 52d formed in the upper member 52c and the intermediate member 52b.

The heater 50 heats the substrate W by radiating infrared heat rays H from the opposing surface 50a to the lower surface of the substrate W by the heat generated by the heating element 53 . The gas supplied to the heater 50 by the gas delivery unit 55 is introduced into the heating flow path 51 and is heated in advance by the heating element 53 in the process of flowing through the heating flow path 51 . The heated gas is discharged from the corresponding gas discharge port 50c through each connection flow path 52d to the annular space SP1 between the periphery of the lower surface of the substrate W and the opposing surface 50a of the heater 50 . do. Since the gas discharged from the gas discharge port 50c is heated in advance, it contributes to the heating of the substrate W.

5 : is a schematic diagram for demonstrating the structure of the moving gas nozzle head 12 and the sensor 13. FIG. The moving gas nozzle head 12 includes a moving gas nozzle 60 having a discharge port 60a for discharging gas in a substantially horizontal direction, and a nozzle support member 61 supporting the moving gas nozzle 60 . A gas pipe 62 , which guides gas to the moving gas nozzle 60 , is connected to the moving gas nozzle 60 . A gas valve 63 for opening and closing a flow path in the gas pipe 62 is interposed in the gas pipe 62 .

The gas discharged from the moving gas nozzle 60 is not limited to nitrogen gas. The gas discharged from the moving gas nozzle 60 may be air. In addition, the gas discharged from the moving gas nozzle 60 may be an inert gas other than nitrogen gas. The flow rate of the gas discharged from the moving gas nozzle 60 is, for example, 5 L/min or more and 30 L/min or less.

The sensor 13 is an example of an eccentricity measurement unit that measures the eccentricity E of the substrate W with respect to the rotation axis A1 . The amount of eccentricity E of the substrate W with respect to the rotation axis A1 is the amount of deviation of the vertical central axis A2 passing through the central portion C1 of the upper surface of the substrate W with respect to the rotation axis A1. am.

The sensor 13 has a light emitting unit 70 that emits light and a light receiving unit 71 that receives the light emitted from the light emitting unit 70 . In this embodiment, the light emitting unit 70 and the light receiving unit 71 are supported by the nozzle support member 61 . In this embodiment, the light emitting unit 70 and the light receiving unit 71 face each other in the vertical direction. Therefore, the optical axis formed by the light emitted from the light emitting part 70 extends in the vertical direction.

The light emitting part 70 has a light emitting surface 70a extending in the horizontal direction, and the light receiving part 71 has a light receiving surface 71a extending parallel to the light emitting surface 70a. The light emitting part 70 has light sources, such as LED, for example. In this embodiment, the light receiving unit 71 is a line sensor, and on the light receiving surface 71a, a plurality of pixels are arranged so as to be arranged in a row in the horizontal direction. In this embodiment, the light emitting surface 70a of the light emitting part 70 and the light receiving surface 71a of the light receiving part 71 face each other in the vertical direction. A band-shaped light is emitted from the light-emitting surface 70a of the light-emitting unit 70 toward the light-receiving surface 71a of the light receiving unit 71 .

A substrate held by the holding surface 21a of the spin base 21 in the space (detection space DS) between the light emitting surface 70a of the light emitting unit 70 and the light receiving surface 71a of the light receiving unit 71 . When the periphery of W is positioned, the amount of eccentricity E of the substrate W with respect to the spin base 21 is measured by the sensor 13 . The light receiving unit 71 outputs an electric signal indicating the amount (eg, intensity) of the received light L to the controller 3 (refer to FIG. 1 ).

The nozzle support member 61 includes a light emitting part support part 61a for supporting the light emitting part 70 , a light receiving part support part 61b for supporting the light receiving part 71 , a light emitting part support part 61a and a light receiving part support part 61b . It includes a connection portion (61c) for connecting the. Therefore, the space SS in the support part is partitioned by the light emitting part support part 61a, the light receiving part support part 61b, and the connection part 61c.

The connecting portion 61c extends in the opposite direction D1 of the light emitting portion 70 and the light receiving portion 71 . As shown in Fig. 5, the connecting portion 61c may extend linearly in the opposite direction D1, and unlike Fig. 5, it is curved in a curved shape so as to protrude in a direction away from the substrate W in the opposite direction D1. It may be extended.

As for the moving gas nozzle 60, the discharge port 60a of the moving gas nozzle 60 is provided in the connection part 61c. The gas discharge direction D2 of the discharge port 60a of the moving gas nozzle 60 is orthogonal to the opposing direction D1 (horizontal direction).

The gas discharged from the discharge port 60a of the moving gas nozzle 60 is supplied toward the support part internal space SS, and is filled in the support part internal space SS. The detection space DS is a part of the support part internal space SS. Therefore, the gas discharged from the discharge port 60a of the moving gas nozzle 60 tends to spread evenly throughout the detection space DS.

In this way, the moving gas nozzle head 12 (the moving gas nozzle 60 ) functions as a gas supply unit that supplies gas toward the detection space DS. In addition, the moving gas nozzle head 12 (the moving gas nozzle 60 ) is an atmosphere in which the atmosphere existing in the detection space DS is replaced by an atmosphere outside the detection space DS (gas discharged from the discharge port 60a ). It functions as a substitution unit.

The moving gas nozzle head 12 is moved in the horizontal direction by the gas nozzle moving unit 65 . The moving gas nozzle head 12, together with the light emitting unit 70 and the light receiving unit 71, is configured to move in the horizontal direction between the detection position (the position shown in FIG. 5) and the retracted position (the position shown in FIG. 1). has been The moving gas nozzle head 12 is disposed adjacent to the heater 50 in the horizontal direction when positioned at the detection position.

When the moving gas nozzle head 12 is positioned at the detection position, the periphery of the substrate W held by the spin base 21 is positioned in the detection space DS. The moving gas nozzle head 12 can supply gas to the detection space DS by discharging gas from the discharge port 60a when it is located in a detection position.

Moreover, when the moving gas nozzle head 12 is located at the detection position, the discharge port 60a is located in the annular space SP1 between the periphery of the lower surface of the substrate W and the opposing surface 50a of the heater 50 . opposite in the horizontal direction. Therefore, the moving gas nozzle head 12 can inject gas into annular space SP1 efficiently. The peripheral edge of the lower surface of the substrate W is a region including the outer peripheral end (tip) of the substrate W and a portion in the vicinity of the outer peripheral end in the lower surface of the substrate W.

When the moving gas nozzle head 12 is positioned at the detection position, one of the light emitting unit 70 and the light receiving unit 71 is positioned above the substrate W (holding position) held by the spin base 21 . , the other of the light emitting unit 70 and the light receiving unit 71 is located below the holding position. In this embodiment, the light emitting unit 70 is located above the holding position, and the light receiving unit 71 is located below the holding position.

When the moving gas nozzle head 12 is positioned at the retracted position, the periphery of the substrate W held by the spin base 21 is positioned outside the detection space DS.

When the moving gas nozzle head 12 is positioned at the detection position, the light emitted from the light emitting unit 70 travels in the detection space DS, a part of which is blocked by the peripheral region of the substrate W, and , other portions are incident on some pixels on the light-receiving surface 71a. The controller 3 is located at the outer peripheral end of the substrate W in the detection space DS based on the position of the pixel that has received the light from the light emitting unit 70 among the plurality of pixels of the light receiving unit 71 . detect the position.

A part of the moving gas nozzle 60 is inserted into the gas nozzle arm 66 coupled to the nozzle support member 61 and extending horizontally.

The gas nozzle moving unit 65 includes a gas nozzle arm horizontal moving mechanism (not shown) that moves the gas nozzle arm 66 in the horizontal direction. The gas nozzle arm horizontal movement mechanism may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack-and-pinion mechanism. The gas nozzle arm horizontal movement mechanism is coupled to, for example, an actuator (not shown) for horizontal movement, such as a motor, and the gas nozzle arm 66 , and transmits a driving force applied from the actuator to the gas nozzle arm 66 . and a horizontal motion transmission mechanism (not shown) for horizontally moving the gas nozzle arm 66 . The horizontal motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

6 is a sectional view of the periphery of the centering unit 14 . The centering unit 14 moves the substrate W on the holding surface 21a of the spin base 21 with respect to the spin base 21 , and sets the central axis A2 of the substrate W to the rotation axis A1 . It is designed to access The centering unit 14 is disposed on the rotation axis A1 side rather than the heating unit 11 .

The centering unit 14 lifts the board|substrate W hold|maintained on the holding surface 21a, or multiple (in this embodiment) comprised so that the said lifted board|substrate W may be mounted on the holding surface 21a. . It includes a pin horizontal movement mechanism (90) for approaching. The pin horizontal movement mechanism 90 is an example of a lifter horizontal movement mechanism.

The plurality of lift pins 80 are arranged at equal intervals in the rotation direction around the rotation axis A1. The pin horizontal movement mechanism 90 moves the plurality of lift pins 80 in a horizontal direction with respect to the spin base 21 integrally. The plurality of lift pins 80 are connected by an annular connecting member 81 .

The centering unit 14 further includes a pin vertical movement mechanism 85 that integrally moves the plurality of lift pins 80 in the vertical direction. The pin vertical movement mechanism 85 is an example of a lifter vertical movement mechanism.

The lift pin 80 has a front-end|tip part 80a as an opposing part which opposes the board|substrate W below the board|substrate W hold|maintained by the holding surface 21a. The plurality of lift pins 80 are moved between the first position (the position indicated by the dashed-dotted line in FIG. 6 ) and the second position (the position indicated by the solid line in FIG. 6 ) by the pin vertical movement mechanism 85 . do. When the lift pin 80 is positioned at the first position, the tip portion 80a of the lift pin 80 is positioned above the substrate W held on the holding surface 21a. When the lift pin 80 is positioned at the second position, the tip portion 80a of the lift pin 80 is positioned below the substrate W held on the holding surface 21a.

Although the structure in particular of the pin vertical movement mechanism 85 is not restrict|limited, The pin vertical movement mechanism 85 contains a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism, for example.

The pin vertical movement mechanism 85 includes a fixed body 86 , a movable body 87 , and a drive mechanism 88 . The movable body 87 is provided so as to be movable along the vertical direction with respect to the fixed body 86 . The drive mechanism 88 acts on the movable body 87 with a driving force for moving the movable body 87 in the vertical direction with respect to the fixed body 86 .

The drive mechanism 88 includes, for example, a motor. For example, the movable body 87 is appropriately connected to the rotor of the motor via a link member or the like, and when the link member is displaced by the motor, the movable body 87 is moved with respect to the fixed body 86 . move in the vertical direction. When the drive mechanism 88 moves the movable body 87 with respect to the fixed body 86 in the vertical direction, the connecting member 81 and the plurality of lift pins 80 integrally move in the vertical direction.

In a state where the substrate W is placed on the holding surface 21a of the spin base 21 , the plurality of lift pins 80 are moved from the second position to the first position, whereby the plurality of lift pins 80 are The substrate W is lifted by the Specifically, the substrate W is transferred from the spin base 21 to the plurality of lift pins 80 while moving to the first position, and the substrate W is spaced upward from the spin base 21 . .

Although the structure in particular of the pin horizontal movement mechanism 90 is not restrict|limited, For example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism is included.

The pin horizontal movement mechanism 90 includes a fixed body 91 , a movable body 92 , and a drive mechanism 93 . The movable body 92 is configured to move along the horizontal direction with respect to the fixed body 91 . The moving direction of the movable body 92 is a horizontal direction parallel to the reference plane P1 (refer to FIG. 3) which is a vertical plane passing through the rotation axis A1. The moving direction of the movable body 92 is the same direction as the centering direction, which is the direction in which the substrate W moves in the alignment step to be described later.

The drive mechanism 93 causes the movable body 92 to apply a driving force for moving the movable body 92 with respect to the fixed body 91 . For example, the drive mechanism 93 is a linear motor mechanism. In that case, the linear motor mechanism includes a coil mounted on the stator and a permanent magnet mounted on the mover, and by these magnetic actions, the mover is moved in the horizontal direction with respect to the stator. The fixed body 91 is connected to the stator of the linear motor, and the movable body 92 is connected to the mover of the linear motor. The drive mechanism 93 is an example of a centering actuator that horizontally moves the substrate W with respect to the spin base 21 by horizontally moving the plurality of lift pins 80 .

The movable body 92 of the pin horizontal movement mechanism 90 is connected to the fixed body 86 of the pin vertical movement mechanism 85 . Therefore, when the movable body 92 of the pin horizontal movement mechanism 90 moves in the horizontal direction, the pin vertical movement mechanism 85, the connecting member 81, and the plurality of lift pins 80 integrally move in the horizontal direction. Move.

The plurality of lift pins 80 are moved from the second position to the first position by the pin vertical movement mechanism 85 , so that the plurality of lift pins 80 lift and support the substrate W from the spin base 21 . do. The pin horizontal movement mechanism 90 horizontally moves the plurality of lift pins 80 supporting the substrate W, so that the position of the substrate W with respect to the spin base 21 can be adjusted. Specifically, the amount of eccentricity E can be reduced by bringing the central axis A2 of the substrate W closer to the rotation axis A1. After adjusting the position of the substrate W with respect to the spin base 21, by moving the plurality of lift pins 80 from the first position to the second position by the pin vertical movement mechanism 85, the spin base 21 ) to hold the substrate W on the holding surface 21a.

The centering unit 14 may include a position measurement sensor 94 such as an encoder that detects the position of the movable body 92 of the pin horizontal movement mechanism 90 in the horizontal direction.

The centering unit 14 includes an annular accommodating member 95 for accommodating the pin vertical movement mechanism 85 and the pin horizontal movement mechanism 90 . A plurality of through holes 95a are formed in the receiving member 95 , and a plurality of lift pins 80 protrude from each of the plurality of through holes 95a toward the lower surface of the substrate W . The centering unit 14 includes a sealing member 96 provided between the periphery of each through hole 95a and the corresponding lift pin 80 .

7 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus 1 . The controller 3 is provided with a microcomputer, and controls the control object with which the substrate processing apparatus 1 was equipped according to a predetermined|prescribed control program.

Specifically, the controller 3 may be a computer including a processor (CPU) 4 and a memory 5 in which a control program is stored. The controller 3 is configured so that the processor 4 executes a control program to execute various controls for substrate processing.

In particular, the controller 3 includes the transfer robots IR and CR, the spin motor 23 , the peripheral nozzle moving unit 44 , the gas nozzle moving unit 65 , the guard raising/lowering unit 37 , and the energizing unit 57 . , sensor 13 , centering unit 14 , suction valve 28 , plurality of processing fluid valves 43 , gas valve 63 , and lower processing fluid valve 73 .

The controller 3 receives an electric signal indicating the position of the movable body 92 detected by the position measuring sensor 94 of the centering unit 14 . The controller 3 receives the electric signal output from the light receiving unit 71 .

8 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus. Fig. 8 mainly shows processing realized when the controller 3 executes a program.

First, the unprocessed substrate W is loaded into the processing unit 2 from the carrier C by the transfer robots IR and CR (refer to FIG. 1 ) and passed to the spin chuck 6 (step S1). Specifically, the substrate W is placed on the holding surface 21a. When the suction valve 28 is opened in the state in which the board|substrate W is mounted on the holding surface 21a, the board|substrate W is hold|maintained horizontally (substrate holding process). Before the substrate W is placed on the holding surface 21a , the flow path opening/closing valve 59 is opened, and the energization of the heater 50 by the energization unit 57 is started.

Although detailed later, after the board|substrate W is mounted on the holding surface 21a, the board|substrate position adjustment process (step S2) which aligns the board|substrate W is performed. The substrate position adjustment process is also referred to as a centering process (centering process).

After the substrate position adjustment process is finished, a predetermined liquid process is performed. In the substrate processing apparatus 1 , for example, a processing liquid is supplied from the peripheral nozzle head 9 toward the periphery of the upper surface of the substrate W while heating the periphery of the substrate W with the heating unit 11 . . APM, carbonated water, HF, and carbonated water are supplied to the periphery of the upper surface of the substrate W in this order. After the supply of the processing liquid is finished, the substrate W is rotated at a high speed to dry the periphery of the upper surface of the substrate W.

More specifically, by moving the peripheral nozzle head 9 to the processing position and opening the corresponding processing fluid valve 43, the APM, etc. A chemical solution is supplied (first chemical solution process: step S3).

Then, the processing fluid valve 43 corresponding to the first peripheral chemical liquid nozzle 40A is closed, and instead, the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is opened. Accordingly, a rinsing liquid such as carbonated water is supplied from the peripheral rinsing liquid nozzle 40C to the periphery of the upper surface of the substrate W (first rinsing process: step S4).

Further, thereafter, the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is closed, and the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is opened. Thereby, a chemical liquid such as hydrofluoric acid is supplied from the second peripheral chemical liquid nozzle 40B to the peripheral portion of the upper surface of the substrate W (second chemical liquid processing: step S5). Then, the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is closed, and the processing fluid valve 43 corresponding to the peripheral rinse liquid nozzle 40C is opened. Accordingly, a rinsing liquid such as carbonated water is supplied from the peripheral rinsing liquid nozzle 40C to the periphery of the upper surface of the substrate W (second rinsing process: step S6).

After the second rinse treatment, the processing fluid valve 43 is closed, and the spin motor 23 accelerates the rotation of the substrate W, thereby rotating the substrate W at a high rotation speed (eg, several thousand rpm) (spin). Dry: Step S7). Thereby, the liquid is removed from the board|substrate W, and the board|substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W is started, the spin motor 23 stops rotating. Thereby, rotation of the board|substrate W is stopped.

After the liquid processing on the substrate W is finished, the transfer robot CR enters the processing unit 2 , picks up the processed substrate W from the spin chuck 6 , and picks up the processing unit 2 . It is taken out (step S8). The substrate W is passed from the transfer robot CR to the transfer robot IR, and is accommodated in the carrier C by the transfer robot IR.

In the liquid treatment, the substrate W is heated by the supply of radiant heat and heating gas by the heater 50 . Therefore, the processing rate of the upper surface periphery of the substrate W is improved by the chemical liquid such as APM or HF. TiN or SiO ₂ present in the upper surface peripheral portion of the substrate W is etched by the chemical liquid such as APM or HF. do. By supplying the heating gas to the annular space SP1 between the heater 50 and the lower surface of the substrate W, the processing liquid deposited on the periphery of the upper surface of the substrate can be prevented from returning to the lower surface of the substrate. there is.

9 : is a flowchart for demonstrating the board|substrate position adjustment process (step S2) in a board|substrate process. 10A-10C are schematic diagrams for demonstrating the mode of a board|substrate when an example of a board|substrate position adjustment process is performed.

In the substrate position adjustment process (step S2), the gas nozzle moving unit 65 moves the moving gas nozzle head 12 to the detection position (step S10).

The gas valve 63 opens, and supply of gas from the moving gas nozzle 60 to the detection space DS is started (gas supply process). Thereby, as shown in FIG. 5, substitution of the atmosphere existing in the detection space DS by the gas supplied from the moving gas nozzle 60 is started (step S11). That is, the atmosphere replacement process of replacing the atmosphere existing in the detection space DS with the gas discharged from the moving gas nozzle 60 in a state where the peripheral edge of the substrate W is located in the detection space DS is started.

After the replacement of the atmosphere is started, the eccentricity E of the substrate W is measured by the sensor 13 (step S12). That is, the eccentricity measurement process of measuring the eccentricity amount E by the sensor 13 while rotating the board|substrate W during execution of an atmosphere substitution process is performed.

After the amount of eccentricity E is measured by the sensor 13, the controller 3 determines whether or not the amount of eccentricity E is within a predetermined threshold (step S13: eccentricity determination process). The predetermined threshold is, for example, 0.08 mm. If the amount of eccentricity E is not within the threshold (step S13: NO), before alignment of the substrate W is performed, it is determined whether the substrate W is located at the reference position where the substrate W is placed. A position confirmation process to confirm is performed (step S14).

In a positioning process, specifically, the controller 3 confirms whether the board|substrate W is located in a reference position based on the detection value of the light receiving part 71. In the reference position, the central axis A2 of the substrate W overlaps the reference plane P1, and the central axis A2 and the rotation axis A1 of the substrate W are in the moving direction (centering) of the lift pin 80. direction) is the rotation phase. FIG. 10A shows a state in which the central axis A2 of the substrate W does not overlap the reference plane P1.

When the substrate W is positioned at the reference position (step S14: YES), the spin motor 23 stops the substrate W and the spin base 21 on the spot without rotating them. When the substrate W is not positioned at the reference position (step S14: NO), the spin motor 23 rotates the substrate W and the spin base 21 to the reference positions and stops them at the reference positions (step S14: NO). S15). For example, when the substrate W is in the state shown in FIG. 10B , the spin motor 23 rotates the substrate W and the spin base 21 clockwise by 90°. Thereby, as shown to FIG. 10B, the center part C1 of the board|substrate W overlaps with the reference plane P1, and the board|substrate W is arrange|positioned at a reference position.

In the state where the board|substrate W is arrange|positioned at the reference position, the alignment of the board|substrate W is performed by the centering unit 14 (alignment process: step S16). Specifically, the centering unit 14 is attached to the spin base 21 so that the central axis A2 of the substrate W approaches the rotation axis A1 according to the eccentricity E measured by the sensor 13 . The substrate W is moved horizontally in the centering direction.

Specifically, the plurality of lift pins 80 are moved to the first position (refer to the position of the lift pins 80 indicated by the dashed-dotted line in FIG. 6 ), and the substrate W on the spin base 21 is separated from the plurality of lift pins 80 . It is lifted by a lift pin (80). Thereafter, as shown in FIG. 10B , the plurality of lift pins 80 move in the centering direction to reduce the eccentricity E of the substrate W, and then, the plurality of lift pins 80 move to the second position. (refer to the position of the lift pin 80 shown by the solid line in FIG. 6) and descend|falls. The substrate W is placed on the holding surface 21a of the spin base 21 by the lowering of the plurality of lift pins 80 .

When the central axis A2 of the substrate W sufficiently approaches the rotation axis A1 of the spin base 21 by the alignment step, the eccentricity of the substrate W is eliminated as shown in FIG. 10C . Elimination of the eccentricity of the substrate W does not mean that the rotation axis A1 and the central axis A2 of the substrate W completely coincide, but the amount of eccentricity E is set to a predetermined threshold (eg, for example, 0.08 mm) or less.

Thereafter, when the suction valve 28 is opened, the substrate W is adsorbed to the spin base 21 (adsorption step: step S17). After that, when the gas valve 63 is closed, replacement of the atmosphere in the detection space DS is completed (step S18). That is, the atmosphere replacement process is completed. Moreover, the gas nozzle moving unit 65 moves the moving gas nozzle head 12 toward a retracted position (step S19). As a result, the substrate position adjustment process (step S2) is finished.

In step S13, when the amount of eccentricity E is within the threshold value (step S13: NO), the alignment process is not executed, but the steps after step S17 are executed.

Thereafter, the unprocessed substrate W is loaded into the processing unit 2 , and substrate position adjustment and substrate processing are performed with respect to the substrate W . From the viewpoint of the heating efficiency of the heater 50 , the energization of the energization unit 57 and the supply of gas to the heater 50 of the heating unit 11 are performed to the next substrate W after the substrate processing is completed. It continues even during the period until the substrate position adjustment is started.

Next, the effect of replacing the atmosphere in the detection space DS will be described.

In the substrate position adjustment process, the periphery of the substrate W is heated by the heating unit 11 when the substrate W is placed on the holding surface 21a. Therefore, fluctuations in the atmosphere occur in the space near the periphery of the substrate W. Specifically, the atmosphere with a relatively high temperature in contact with the periphery of the substrate W and the surrounding atmosphere are mixed and the atmosphere is stirred. A non-uniformity arises in the refractive index of the space in the vicinity of the periphery of the board|substrate W by stirring an atmosphere.

When the moving gas nozzle head 12 is disposed at the detection position, the detection space DS between the light emitting portion 70 and the light receiving portion 71 of the sensor 13 is located in the vicinity of the periphery of the substrate W . Therefore, fluctuations in the atmosphere occur also in the detection space DS.

11 : is a graph for demonstrating the difference of the measured value of the eccentricity amount E in before and after substitution of the atmosphere in detection space DS is performed. In FIG. 11, the horizontal axis has shown the rotation phase of the board|substrate W, and the vertical axis|shaft has shown the displacement amount of the outer peripheral edge of the board|substrate W. In FIG.

The rotation phase means the amount of rotation with respect to the reference position when the angle of the reference position in the rotation direction of the substrate W is 0°. The amount of displacement of the outer peripheral end of the substrate W is the amount of shift of the substrate W in a direction orthogonal to the opposing directions of the light emitting unit 70 and the light receiving unit 71, and the substrate W positioned at a predetermined reference position ) and the distance between the outer peripheral end of the substrate W in each rotation phase. The reference position is a position where the central axis A2 of the substrate W coincides with the rotation axis A1 of the spin base 21 .

The amount of eccentricity E of the substrate W with respect to the rotation axis A1 is the absolute value of the maximum value of the displacement amount of the outer peripheral end of the substrate W and the absolute value of the minimum value of the displacement amount of the outer peripheral end of the substrate W It is half of the sum (total displacement (DA)) (E=DA/2).

If, unlike this substrate processing, the atmosphere in the detection space DS is not replaced, the amount of eccentricity E is measured in a state in which the atmosphere is fluctuated in the detection space DS. Therefore, as shown by the broken line in FIG. 11, noise arises in the displacement amount of the outer peripheral edge of the board|substrate W. As shown in FIG. Therefore, the measurement precision of the eccentricity amount E is insufficient.

On the other hand, in this substrate processing, since the atmosphere existing in the detection space DS is replaced by the gas supplied from the moving gas nozzle 60, fluctuation|fluctuation of the atmosphere in the detection space DS is eliminated. Therefore, as shown by the solid line in FIG. 11, the noise of the displacement amount of the outer peripheral edge of the board|substrate W is reduced. Accordingly, the eccentricity E of the substrate W can be accurately measured.

According to the first embodiment, the atmosphere in the detection space DS is replaced by the gas (the atmosphere outside the detection space DS) discharged from the moving gas nozzle 60 . Therefore, when the periphery of the board|substrate W is located in the detection space DS, the fluctuation|fluctuation of the atmosphere in detection space DS can be eliminated. As a result, since the detection precision of the sensor 13 can be improved, the amount of eccentricity E of the board|substrate W can be reduced favorably.

The moving gas nozzle 60 discharges gas toward the annular space SP1 between the periphery of the substrate W held by the holding surface 21a and the heater 50 . The atmosphere existing in the annular space SP1 is easily heated by the heater 50, and a temperature difference with the atmosphere outside the annular space SP1 is likely to occur. Therefore, it is easy to generate|occur|produce especially in the atmosphere which exists in annular space SP1. Then, if the moving gas nozzle 60 is comprised so that gas may be discharged toward the annular space SP1, the atmosphere of the annular space SP1 can be replaced effectively. Therefore, fluctuations in the atmosphere in the annular space SP1 can be eliminated.

<Second embodiment>

12 : is a schematic diagram for demonstrating the structural example of the processing unit 2 with which the substrate processing apparatus 1P which concerns on 2nd Embodiment is equipped. 13 is a schematic plan view of the processing unit 2 according to the second embodiment. In FIG. 13, illustration of the peripheral nozzle head 9 and the gas nozzle moving unit 65 is abbreviate|omitted for the convenience of description.

In FIGS. 12 and 13, and FIGS. 14 to 18B to be described later, the same reference numerals as those in FIG. 1 are attached to the same components as those shown in FIGS. 1 to 11 and descriptions thereof are omitted.

The main difference between the substrate processing apparatus 1P and the substrate processing apparatus 1 according to the first embodiment is that a plurality of fixed gas nozzles 15 and a mounting plate 16 are used instead of the moving gas nozzle head 12 . is installed, the position of the sensor 13P is fixed, and the centering unit 14P is attached to the guard 30 .

One of the light emitting unit 70 and the light receiving unit 71 of the sensor 13P is disposed above the holding position, and the other of the light emitting unit 70 and the light receiving unit 71 is disposed below the holding position, there is. In the second embodiment, the opposing direction D1 of the light emitting unit 70 and the light receiving unit 71 coincides with the vertical direction. In the example shown in FIG. 13, the light emitting part 70 is arrange|positioned below the holding position, and the light receiving part 71 is arrange|positioned above the holding position.

The light emitting part 70 is arranged in the motor housing 24 of the spin chuck 6 . The light emitting part 70 is arrange|positioned below the through-hole which penetrates the motor housing 24 in an up-down direction. The transmission hole of the motor housing 24 is covered with a transmission member that transmits the light L of the light emitting part 70 . The light L emitted by the light emitting unit 70 is emitted to the outside of the motor housing 24 through the transparent member.

The light receiving part 71 is arranged in the sensor housing 100 arranged in the chamber 8 . The light receiving unit 71 is disposed above the through hole penetrating the sensor housing 100 in the vertical direction. The transmission hole of the sensor housing 100 is covered with a transparent member that transmits the light L of the light emitting unit 70 . The light L emitted from the light emitting unit 70 enters the sensor housing 100 through the transparent member and is irradiated to the light receiving unit 71 . In this embodiment, the light emitting surface 70a of the light emitting part 70 and the light receiving surface 71a of the light receiving part 71 face each other in the vertical direction.

In this way, the light emitting part 70 and the light receiving part 71 are being fixed to the members (motor housing 24 and sensor housing 100) whose positions in the chamber 8 were fixed. Therefore, the periphery of the board|substrate W is arrange|positioned in the detection space DS by hold|maintaining the board|substrate W by the holding surface 21a.

When there is no substrate W on the spin base 21 , the light L emitted from the light emitting part 70 is annular formed between the inner peripheral surface of the upper end of the guard 30 and the outer peripheral surface of the heater 50 . It passes through the space SP2 in the vertical direction and reaches the light receiving unit 71 without being blocked by the guard 30 and the heater 50 . When the substrate W is on the spin base 21 , a part of the light L emitted from the light emitting unit 70 is blocked by the periphery of the substrate W. Accordingly, the controller 3 controls the substrate W in the detection space DS based on the position of the pixel that has received the light L from the light emitting unit 70 among the plurality of pixels of the light receiving unit 71 . ) to detect the position of the outer periphery.

The mounting plate 16 is mounted and fixed to the side wall 8A of the chamber 8 .

The plurality of fixed gas nozzles 15 are commonly attached to a single mounting plate 16 . The plurality of fixed gas nozzles 15 are arranged above the holding position of the substrate W along the opposing direction D1 of the light emitting unit 70 and the light receiving unit 71 .

A gas pipe 110 for guiding gas such as nitrogen gas to the fixed gas nozzle 15 is connected to each of the fixed gas nozzles 15 . A gas valve 111 is interposed in each gas pipe 110 , and each gas valve 111 opens and closes a flow path in the corresponding gas pipe 110 . Each of the plurality of fixed gas nozzles 15 has a plurality of gas discharge ports 15a. The plurality of gas discharge ports 15a are arranged along the opposite direction D1.

The plurality of fixed gas nozzles 15 include a first fixed gas nozzle 15A that supplies gas to a portion in the vicinity of the periphery of the substrate W in the detection space DS, and a substrate in the detection space DS. and a second fixed gas nozzle 15B for supplying gas to a portion of the space around the periphery of (W). A plurality of the second fixed gas nozzles 15B (in the example of FIG. 12 , two) may be provided.

The plurality of fixed gas nozzles 15 is an example of a gas supply unit that supplies gas to the detection space DS. Further, the fixed gas nozzle 15 functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with an atmosphere outside the detection space DS (gas discharged from the gas discharge port 15a).

14A is a schematic diagram of the plurality of fixed gas nozzles 15 viewed from the horizontal direction. 14B is a perspective view of the periphery of the plurality of fixed gas nozzles 15 . 14C is a plan view of a plurality of fixed gas nozzles 15 .

As shown to FIG. 14A, the gas discharge direction D3 of the gas discharge port 15a of the 2nd fixed gas nozzle 15B is a direction orthogonal to the opposing direction D1. The gas discharge direction D4 of the gas discharge port 15a of the first fixed gas nozzle 15A is an inclined direction inclined with respect to the horizontal plane HS. In this embodiment, since the opposing direction D1 is a vertical direction, the direction orthogonal to the opposing direction D1 is a horizontal direction. The angle θ between the straight line SL extending in the discharge direction D4 and the horizontal plane HS is, for example, 18°.

Since the first fixed gas nozzle 15A is disposed above the holding position of the substrate W, the discharge direction D4 is from the gas discharge port 15a of the first fixed gas nozzle 15A to the detection space ( As it faces DS, it is inclined with respect to the horizontal plane HS so as to face downward. Specifically, the gas discharge direction D4 of the gas discharge port 15a of the first fixed gas nozzle 15A is an annular space between the periphery of the lower surface of the substrate W and the opposing surface 50a of the heater 50 . (SP1) direction. Therefore, 15 A of 1st fixed gas nozzles can inject gas into annular space SP1 efficiently.

As shown in FIG. 14B, each fixed gas nozzle 15 is formed integrally with the mounting part 115 extended along the mounting plate 16 and mounted on the mounting plate 16, and the mounting part 115, and the base and a discharge unit 116 provided with a discharge port 15a.

An insertion hole 115a through which a fastening member 118 such as a screw is inserted is formed in the attachment portion 115 (see also Fig. 14C). The fixed gas nozzle 15 is commonly attached to the mounting plate 16 by a fastening member 118 .

13 , the discharge unit 116 extends from the mounting unit 115 in a direction inclined with respect to the direction in which the mounting unit 115 extends (direction along the sidewall 8A) in plan view. has been In a plan view, the discharge unit 116 and the mounting unit 115 extend horizontally so as not to be orthogonal to each other.

The gas discharge port 15a is provided at the distal end of the discharge unit 116 . The discharge unit 116 extends toward the rotation axis A1, and a sensor 13P is disposed between the discharge unit 116 and the rotation axis A1 (refer to FIG. 13). Accordingly, the gas discharged from the discharge unit 116 is fed into the detection space DS of the sensor 13P.

The discharge portion 116 of the first fixed gas nozzle 15A has a flat surface 116a in which the gas discharge port 15a is formed and inclined with respect to the opposite direction D1. The discharge portion 116 of the second fixed gas nozzle 15B has a flat surface 116b along the opposite direction D1 on which the gas discharge port 15a is formed.

As shown in FIG. 14C , a gas pipe 110 is connected to the discharge portion 116 of each fixed gas nozzle 15 . Specifically, an internal flow path 117 having one end connected to the gas discharge port 15a is formed inside the discharge unit 116 , and the flow path in the gas pipe 110 is connected to the other end of the internal flow path 117 . has been

15 : is sectional drawing of the periphery of the centering unit 14P which concerns on 2nd Embodiment.

The centering unit 14P lifts the board|substrate W hold|maintained on the holding|maintenance surface 21a, or two lifters 120 comprised so that the said lifted board|substrate W may be mounted on the holding|maintenance surface 21a. and a lifter horizontal movement mechanism 90P for moving the central portion C1 of the substrate W close to the rotation axis A1 by horizontally moving the two lifters 120 .

Each lifter 120 faces the periphery of the substrate W on the spin base 21 in the horizontal direction. The lifter horizontal movement mechanism 90P includes a first lifter horizontal movement mechanism 122 for individually horizontally moving in the centering direction, and a second lifter horizontal movement mechanism for integrally horizontally moving the two lifters 120 in the centering direction ( 123).

The two lifters 120 include a first lifter 120A and a second lifter 120B that is horizontally opposed to the periphery of the substrate W on the spin base 21 on the opposite side to the first lifter 120A. include Each lifter 120 has the same configuration.

The two lifters 120 are respectively arranged at two positions where the angles around the rotation axis A1 are 180 degrees different from each other. Each lifter 120 has opposing surfaces 127 which are horizontally opposed in the centering direction. The opposing surface 127 of the first lifter 120A is referred to as a first opposing face 127A, and the opposing face 127 of the second lifter 120B is referred to as a second opposing face 127B. The first opposing surface 127A and the second opposing surface 127B are inclined with respect to the horizontal direction so as to be spaced apart from each other as they face upward.

Each lifter 120 is moved between a lift position (a position indicated by a dashed-dotted line in FIG. 15 ) and a retracted position (a position indicated by a solid line in FIG. 15 ) by the first lifter horizontal movement mechanism 122 . The lift position is that the tip (end in the centering direction) of the opposing surface 127 of the lifter 120 is greater than the outer peripheral edge of the substrate W on the holding surface 21a of the spin base 21 on the rotation axis A1. It is located on the side The retracted position is a position where the opposing surface 127 of the lifter 120 is spaced apart from the outer peripheral end of the substrate W on the holding surface 21a of the spin base 21 .

Since the first opposing face 127A and the second opposing face 127B are inclined with respect to the horizontal direction so as to be spaced apart from each other as they face upward, the first lifter 120A and the second lifter 120B move to the lift position. In the process of moving, the substrate W on the spin base 21 is lifted by the first lifter 120A and the second lifter 120B.

Specifically, after the first opposing surface 127A and the second opposing surface 127B come into contact with the outer peripheral end of the substrate W, the first lifter 120A and the second lifter 120B become closer to each other and spin The substrate W is lifted from the base 21 . Then, the first lifter 120A and the second lifter 120B reach a lift position in which the substrate W is lifted from the spin base 21 to a predetermined height.

In the process of moving the first lifter 120A and the second lifter 120B located in the lift position to the retracted position, the substrate W is placed on the holding surface 21a of the spin base 21 .

The first lifter horizontal movement mechanism 122 includes two air cylinders 125 . The two air cylinders 125 are respectively arrange|positioned at the two positions in which the angle around the rotation axis line A1 differs by 180 degrees. The two air cylinders 125 are arranged at the same height. The two air cylinders 125 are horizontally opposed. The spin base 21 is arranged between the two air cylinders 125 in a plan view.

The air cylinder 125 includes a cylinder body 125a having an internal space, a piston dividing the internal space of the cylinder body 125a into two chambers spaced apart in the axial direction of the air cylinder 125, and the cylinder body 125a. It protrudes in the axial direction of the air cylinder 125 from the cross section of and includes a rod 125b that moves in the axial direction of the air cylinder 125 together with the piston. The lifter 120 is attached to the rod 125b. The two air cylinders 125 are an example of a lifter actuator.

The lifter 120 moves in the axial direction of the air cylinder 125 together with the rod 125b with respect to the cylinder body 125a. The axial direction of the air cylinder 125 coincides with the centering direction.

The second lifter horizontal movement mechanism 123 includes a slide bracket 140 for supporting two air cylinders 125 , a linear motor 141 for moving the slide bracket 140 in a centering direction, and a slide bracket 140 . ) includes a linear guide 142 for guiding in the centering direction. The linear motor 141 is an example of a centering actuator that horizontally moves the substrate W with respect to the spin base 21 by horizontally moving the two lifters 120 .

The slide bracket 140 includes a base plate 140a disposed below each of the two air cylinders 125 and one or more joint arms 140b connecting the two base plates 140a. The linear guide 142 is provided between the two main bases 143 supporting the two base plates 140a, respectively, and the corresponding base plates 140a.

As the slide bracket 140 moves horizontally, the two air cylinders 125 supported by the slide bracket 140 and the two lifters 120 supported by the two air cylinders 125 are formed by the slide bracket 140 . It moves horizontally in the same direction, speed, and amount of movement.

The centering unit 14P includes a unit housing 145 for accommodating the base plate 140a with two air cylinders 125 (see FIG. 13 ). The linear motor 141 and the linear guide 142 are accommodated in two unit housings 145, respectively. The lifter 120 is disposed outside the unit housing 145 .

The unit housing 145 is mounted on the first extension portion 36A of the first guard 30A from above, and is supported by the first extension portion 36A. Therefore, the centering unit 14 moves up and down together with the first guard 30A. Accordingly, when the centering unit 14 operates, the first guard 30A is positioned at the substrate positioning position where the opposing surfaces 127 of the two lifters 120 oppose the periphery of the substrate W in the horizontal direction. need to be placed. The substrate position adjustment position is a position between the upper position and the lower position. The guard raising/lowering unit 37 (first guard raising/lowering unit) is an example of a lifter vertical movement mechanism for raising/lowering the two lifters 120 .

The substrate W on the spin base 21 is lifted by the two lifters 120 while the two lifters 120 are moved closer to each other and moved to a predetermined lift position, and the spin base 21 ) from the holding surface 21a.

When the two lifters 120 horizontally support the substrate W and the linear motor 141 moves the slide bracket 140 in the centering direction, the two lifters 120 support the substrate ( W) horizontally moves in the same direction, speed, and amount of movement as the slide bracket 140 . Thereby, the central axis A2 of the substrate W moves with respect to the rotation axis A1. Accordingly, by adjusting the amount of movement of the slide bracket 140 , the central axis A2 of the substrate W can be brought closer to the rotation axis A1 .

The substrate processing apparatus 1P can perform substrate processing similar to that of the substrate processing apparatus 1 according to the first embodiment. Specifically, the substrate processing of FIG. 8 can be performed by the substrate processing apparatus 1P.

However, the operation|movement of each member in the board|substrate position adjustment process (step S2) differs somewhat. Specifically, in the substrate processing apparatus 1P, instead of the moving gas nozzle 60, the fixed gas nozzle 15 is provided, and therefore, as shown in FIG. 16 , the process related to the movement of the nozzle is omitted.

16 is a flowchart for explaining substrate position adjustment (step S2) in the substrate processing. Specifically, since the position of the sensor 13P in the chamber 8 is fixed, the process related to the movement of the sensor is omitted.

More specifically, it is as follows. After the substrate W is placed on the holding surface 21a of the spin base 21 , the plurality of gas valves 111 are opened.

When the substrate W is placed on the holding surface 21a, the periphery of the substrate W is located in the detection space DS. When the plurality of gas valves 111 are opened, supply of gas from the plurality of fixed gas nozzles 15 to the detection space DS is started (gas supply process), as shown in FIG. 14A mentioned above.

Substitution of the atmosphere existing in the detection space DS by the gas supplied from the fixed gas nozzle 15 is started (step S11). That is, in the state where the peripheral edge of the substrate W is positioned in the detection space DS, the atmosphere replacement process of replacing the atmosphere existing in the detection space DS with the gas discharged from the plurality of fixed gas nozzles 15 is started. do.

After the replacement of the atmosphere is started, the amount of eccentricity of the substrate W is measured by the sensor 13P (step S12). That is, the eccentricity measurement process of measuring the eccentricity amount E by the sensor 13 while rotating the board|substrate W during execution of an atmosphere substitution process is performed.

After the amount of eccentricity E is measured by the sensor 13P, the controller 3 determines whether or not the amount of eccentricity E is within a predetermined threshold (step S13: eccentricity determination process). The predetermined threshold is, for example, 0.08 mm. If the amount of eccentricity E is not within the threshold (step S13: NO), before alignment of the substrate W is performed, it is determined whether the substrate W is located at the reference position where the substrate W is placed. A position confirmation process to confirm is performed (step S14).

Specifically, the controller 3 confirms whether or not the substrate W is positioned at the reference position based on the detected value of the light receiving unit 71 . In the reference position, the central axis A2 of the substrate W overlaps the reference plane P1, and the central axis A2 and the rotation axis A1 of the substrate W are in the moving direction (centering direction) of the lifter 120. ) are the rotational phases.

When the substrate W is positioned at the reference position (step S14: YES), the spin motor 23 stops the substrate W and the spin base 21 on the spot without rotating them. When the substrate W is not positioned at the reference position (step S14: NO), the spin motor 23 rotates the substrate W and the spin base 21 to the reference positions and stops them at the reference positions (step S14: NO). S15). Thereby, as shown to FIG. 17A, the central axis line A2 of the board|substrate W overlaps with the reference plane P1, and the board|substrate W is arrange|positioned at a reference position.

In the state where the board|substrate W is arrange|positioned at the reference position, the alignment of the board|substrate W is performed by the centering unit 14 (alignment process: step S16). Specifically, the centering unit 14P rotates the spin base 21 so that the central axis A2 of the substrate W approaches the rotation axis A1 based on the eccentricity E measured by the sensor 13P. The substrate W is moved horizontally in the centering direction with respect to .

Specifically, as shown in FIG. 17B , the first lifter 120A and the second lifter 120B are moved to the lift position so that the substrate W on the spin base 21 is moved between the first lifter 120A and the second lifter 120A and the second lifter 120B. It is lifted by the lifter 120B. Thereafter, as shown in FIG. 17C , the eccentricity E of the substrate W is reduced by moving the first lifter 120A and the second lifter 120B integrally in the centering direction. Thereafter, the substrate W is placed on the holding surface 21a of the spin base 21 by horizontally moving the first lifter 120A and the second lifter 120B to the retracted position.

By the alignment step, the central axis A2 of the substrate W is sufficiently close to the rotation axis A1 of the spin base 21, and the eccentricity of the substrate W is eliminated.

Thereafter, when the suction valve 28 is opened, the substrate W is adsorbed to the spin base 21 (adsorption step: step S17). After that, when the gas valve 63 is closed, replacement of the atmosphere in the detection space DS is completed (step S18). That is, the atmosphere replacement process is completed. As a result, the substrate position adjustment process (step S2) is finished.

According to the second embodiment, the atmosphere existing in the detection space DS is replaced by the gas discharged from the fixed gas nozzle 15 (the atmosphere outside the detection space DS). Therefore, when the periphery of the board|substrate W is located in the detection space DS, the fluctuation|fluctuation of the atmosphere in detection space DS can be eliminated. As a result, since the detection precision of the sensor 13P can be improved, the amount of eccentricity E of the board|substrate W can be reduced favorably.

As described above, fluctuations are particularly likely to occur in the atmosphere existing in the annular space SP1. The 1st fixed gas nozzle 15A discharges gas toward the annular space SP1 between the periphery of the board|substrate W hold|maintained by the holding surface 21a, and the heater 50. Therefore, the atmosphere of the annular space SP1 can be replaced effectively. Therefore, fluctuations in the atmosphere in the annular space SP1 can be eliminated.

According to the second embodiment, the plurality of fixed gas nozzles 15 as the gas supply unit includes a plurality of gas discharge ports 15a arranged along the opposite direction D1 of the light emitting unit 70 and the light receiving unit 71 . . Therefore, with the gas discharged from the plurality of gas discharge ports 15a arranged along the opposite direction D1, not only the atmosphere in the vicinity of the periphery of the substrate W but also the atmosphere in the entire detection space SP. is replaced Therefore, the detection accuracy of the sensor 13P can be improved.

According to the second embodiment, a plurality of fixed gas nozzles 15 are mounted on the mounting plate 16 , and the mounting portion 115 and the discharge portion 116 of the plurality of fixed gas nozzles 15 are integrally formed. there is. Therefore, the plurality of fixed gas nozzles 15 can be firmly fixed with respect to the mounting plate 16 , and the positional relationship of the fixed gas nozzles 15 can be firmly fixed. Accordingly, it is possible to accurately supply gas toward the detection space DS.

18A and 18B are schematic diagrams for explaining a modified example of the atmosphere replacement step performed in the substrate processing according to the second embodiment.

In the substrate processing apparatus 1P according to the second embodiment, the gas is not discharged from the fixed gas nozzle 15 , but the detection space DS is caused by the airflow F formed by the airflow forming unit 10 . ) may be substituted for the atmosphere in the . Specifically, when the first guard 30A is positioned at the upper position, the airflow F passes between the periphery of the substrate W and the inner peripheral end (upper end) of the first guard 30A, and the first guard The first guard 30A is configured to divert the path of the airflow F so that the airflow F passes outside of the first guard 30A when 30A is positioned at the lower position.

More specifically, as shown in Fig. 18A, when the first guard 30A is positioned at the upper position, the gap between the substrate W and the periphery and the inner peripheral end of the first guard 30A is widened, The airflow F mainly passes between the inner peripheral edge part of the 1st guard 30A and the peripheral edge part of the board|substrate W, and reaches the upstream edge 34a of the exhaust duct 34 (airflow formation process). On the other hand, as shown in FIG. 18B , when the first guard 30A is positioned at the lower position, the gap between the periphery of the substrate W and the inner peripheral end of the first guard 30A is formed by the first guard 30A. becomes smaller than when is located in the upper position. Therefore, the airflow F mainly passes through the gap between the first guard 30A and the exhaust pipe 33 to reach the upstream end 34a of the exhaust duct 34 .

In this way, by disposing the first guard 30A in the upper position, the airflow ( F) is formed. Thereby, the atmosphere in the vicinity of the periphery of the board|substrate W can be replaced with the gas conveyed by the airflow F. As shown in FIG. That is, the supply/exhaust unit constituted by the airflow forming unit 10 and the exhaust duct 34 functions as an atmosphere replacement unit. Therefore, when the periphery of the board|substrate W is located in the detection space DS, the fluctuation|fluctuation of the atmosphere in detection space DS can be eliminated. As a result, since the detection precision of the sensor 13P can be improved, the eccentricity amount E of the board|substrate W can be reduced favorably by the centering unit 14. As shown in FIG.

In addition, between the exhaust pipe 33 and the first guard 30A, when the first guard 30A is positioned at the upper position, the air flow F between the exhaust pipe 33 and the first guard 30A A path width adjustment mechanism 160 for narrowing the path through which the The path width adjustment mechanism 160 includes, for example, a first flange 161 protruding from the first cylindrical portion 35A of the first guard 30A to the side opposite to the center side of the guard 30; It is constituted by a second flange 162 protruding from the exhaust pipe 33 toward the center of the guard 30 . The first flange 161 and the second flange 162 are opposite to each other in the vertical direction, and the closer the first guard 30A is to the upper position, the closer the first flange 161 and the second flange 162 to each other. The gap narrows.

<Other embodiments>

This invention is not limited to the embodiment demonstrated above, It can implement in another form.

For example, in the embodiment described above, the substrate processing apparatuses 1 and 1P include the transfer robots IR and CR, the processing unit 2 , and the controller 3 . However, the substrate processing apparatuses 1 and 1P may be configured by only the processing unit 2 . In other words, the processing unit 2 may be an example of a substrate processing apparatus.

Moreover, in the above-mentioned embodiment, in the sensors 13 and 13P, the opposing direction D1 of the light emitting part 70 and the light receiving part 71 follows the vertical direction. However, the opposing direction D1 does not necessarily need to follow the perpendicular direction, and may incline with respect to the perpendicular direction. In other words, the high axis may extend in a direction inclined with respect to the vertical direction.

Also in the first embodiment, when the first guard 30A is positioned at the upper position, the airflow F passes between the periphery of the substrate W and the inner periphery of the first guard 30A, The first guard 30A may be configured to switch the path of the airflow F so that the first guard 30A is positioned at the lower position so that the airflow F passes outside the first guard 30A. For that purpose, it is necessary that a movement permitting hole is formed in the first guard 30A so that the moving gas nozzle head 12 can move to the detection position when the first guard 30A is positioned at the upper position.

Moreover, it is possible to apply the centering unit 14 to the second embodiment, and conversely, a movement permitting hole for allowing the movement of the moving gas nozzle head 12 to the detection position is formed in the first guard 30A. If it is, it is also possible to apply the centering unit 14P to 1st Embodiment.

Moreover, in 2nd Embodiment, instead of the some fixed gas nozzle 15, the single fixed gas nozzle in which the some gas discharge port 15a was formed may be provided. Moreover, in 1st Embodiment, the some discharge port 60a in a line in the opposing direction D1 may be formed in the moving gas nozzle head 12. As shown in FIG.

Moreover, in 2nd Embodiment, the 1st opposing surface 127A and the 2nd opposing surface 127B incline with respect to the horizontal direction so that it may be spaced apart from each other as it goes upward. However, the first opposed surface 127A and the second opposed surface 127B may be vertical surfaces. In this case, the substrate W is lifted from the spin base 21 by moving the first guard 30A upward while the substrate W is held on both sides in the horizontal direction by the two lifters 120 . can do it

Moreover, the gas discharged from the moving gas nozzle 60 and the gas discharged from the 1st fixed gas nozzle 15A do not need to form the airflow which goes to the annular space SP1, and the heater 50 is heated The occurrence of fluctuations in the atmosphere in the detection space DS caused by .

In the above-described embodiment, each configuration is schematically represented by blocks in some cases, but the shape, size, and positional relationship of each block does not indicate the shape, size, and positional relationship of each configuration.

Although embodiments of the present invention have been described in detail, these are only specific examples used to clarify the technical content of the present invention, and the present invention is not limited to these specific examples and should not be interpreted, and the scope of the present invention is not limited only by the appended claims.

Claims (14)

A base having a holding surface for maintaining the disk-shaped substrate in a horizontal position;
a rotating unit for rotating the base around a vertical axis of rotation;
a heating unit which heats the periphery of the substrate held on the holding surface;
It has a light emitting unit that emits light and a light receiving unit that receives the light emitted from the light emitting unit, wherein when the periphery of the substrate held on the holding surface is located in the detection space between the light emitting unit and the light receiving unit, an eccentricity measuring unit for measuring the eccentricity of the substrate;
a centering unit for moving the substrate on the holding surface with respect to the base to bring the central portion of the substrate closer to the rotation axis;
and an atmosphere replacement unit for replacing an atmosphere existing in the detection space with an atmosphere outside the detection space. The method according to claim 1,
The substrate processing apparatus, wherein the atmosphere replacement unit includes a gas supply unit that supplies a gas toward the detection space. 3. The method according to claim 2,
the heating unit includes a heater facing the peripheral portion of the substrate held on the holding surface;
The substrate processing apparatus, wherein the gas supply unit discharges gas toward a space between a periphery of a substrate held by the holding surface and the heater. 4. The method according to claim 2 or 3,
The substrate processing apparatus, wherein the gas supply unit includes a plurality of gas discharge ports arranged in a direction opposite to the light emitting unit and the light receiving unit. 5. The method according to claim 4,
the gas supply unit includes a plurality of fixed gas nozzles each having a plurality of the gas discharge ports, and a mounting plate to which the plurality of fixed gas nozzles are mounted in common;
The fixed gas nozzle includes a mounting portion mounted on the mounting plate, and a discharge portion integrally formed with the mounting portion and provided with the gas discharge port. 4. The method according to claim 2 or 3,
A detection position in which the gas supply unit moves together with the light emitting unit and the light receiving unit to supply gas to the detection space, wherein a periphery of a substrate held on the holding surface is located within the detection space. and a moving gas nozzle head in which a periphery of the substrate held by the holding surface moves between a retracted position located outside the detection space. 4. The method according to any one of claims 1 to 3,
Further comprising a chamber for accommodating the base,
The substrate processing apparatus, wherein the atmosphere replacement unit includes a supply/exhaust unit configured to supply air to and exhaust air from the space within the chamber. 8. The method of claim 7,
A guard surrounding the substrate held on the holding surface, between an upper position where the upper end of the guard is located above the upper surface of the substrate and a lower position where the upper end of the guard is located below the upper surface of the substrate further comprising a guard configured to move;
The supply/exhaust unit includes an exhaust duct for exhausting the atmosphere in the chamber, and an airflow forming unit for supplying an atmosphere into the chamber to form an airflow toward the exhaust duct in the chamber,
The guard is configured such that when the guard is positioned at the upper position, the airflow passes between the guard and the periphery of the substrate held on the holding surface, and when the guard is positioned at the lower position, the airflow passes through the diverting the path of the airflow to pass through the outside of the guard. 4. The method according to any one of claims 1 to 3,
The center of the board|substrate by the said centering unit lifting the board|substrate hold|maintained on the said holding surface, or by horizontally moving the lifter and the lifter comprised so that the said lifted board|substrate may be mounted on the said holding surface. and a lifter horizontal movement mechanism for approaching the rotation axis. 10. The method of claim 9,
A plurality of the lifters are installed,
the plurality of lifters have opposing portions facing the substrate from below than the substrate held on the holding surface;
The centering unit further includes a lifter vertical movement mechanism for vertically moving the opposing portion between a first position higher than the holding surface and a second position lower than the holding surface. . 10. The method of claim 9,
A plurality of lifters are installed,
A plurality of the lifters include a first lifter having a first opposing surface opposite to a periphery of the substrate held on the holding surface in a horizontal direction, and the first opposing surface at a periphery of the substrate held on the holding surface; comprises a second lifter having a second opposing surface opposite in the horizontal direction on the opposite side,
The lifter horizontal movement mechanism includes a first lifter horizontal movement mechanism for individually horizontally moving the first lifter and the second lifter, and a second lifter horizontal movement mechanism for horizontally moving the first lifter and the second lifter integrally. including instruments;
The first opposing surface and the second opposing surface are inclined with respect to a horizontal direction so as to be spaced apart from each other as they face upward. a substrate holding step of holding the substrate in a horizontal position on the holding surface of the base such that the heater faces the periphery of the disk-shaped substrate;
In a state where the periphery of the substrate is positioned in a detection space that is a space between the light emitting portion and the light receiving portion of a sensor having a light emitting portion and a light receiving portion, atmosphere replacement for replacing an atmosphere existing in the detection space with an atmosphere outside the detection space process and
an eccentricity measurement step of detecting, with the sensor, an amount of eccentricity of the substrate with respect to the rotational axis while rotating the base around a vertical rotational axis during execution of the atmosphere replacement step;
and a positioning step of bringing the central portion of the substrate closer to the rotation axis by moving the substrate relative to the base in accordance with the amount of eccentricity detected by the eccentricity measurement step. 13. The method of claim 12,
The substrate position adjustment method, wherein the atmosphere replacement step includes a gas supply step of supplying a gas toward the detection space. 14. The method of claim 12 or 13,
wherein the atmosphere replacement step includes a guard surrounding the substrate, between an upper position in which the upper end of the guard is positioned above the upper surface of the substrate and a lower position in which the upper end of the guard is positioned below the upper surface of the substrate. By disposing a guard configured to move in the upper position, an airflow forming process of forming an airflow flowing toward an exhaust duct through between the periphery of the substrate and the guard in a chamber accommodating the guard and the base; A method for positioning a substrate, comprising:

Images