TW202215590A - Substrate processing apparatus and adjusting method of substrate position A pedestal having a holding surface for holding a disk-shaped substrate in a horizontal posture - Google Patents

Substrate processing apparatus and adjusting method of substrate position A pedestal having a holding surface for holding a disk-shaped substrate in a horizontal posture Download PDF

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TW202215590A
TW202215590A TW110134810A TW110134810A TW202215590A TW 202215590 A TW202215590 A TW 202215590A TW 110134810 A TW110134810 A TW 110134810A TW 110134810 A TW110134810 A TW 110134810A TW 202215590 A TW202215590 A TW 202215590A
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substrate
light
gas
guard
mentioned
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TWI804991B (en
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安武陽介
菊本憲幸
岩尾通矩
石井弘晃
宝鈴 鄧
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Two-Way Televisions, Distribution Of Moving Picture Or The Like (AREA)
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Abstract

The substrate processing apparatus of the invention includes: a pedestal having a holding surface for holding a disk-shaped substrate in a horizontal posture; a rotating unit that rotates the pedestal around a vertical axis of rotation; and a heating unit that holds the holding surface of the substrate peripheral portion is heated; the eccentricity measuring unit has a light-emitting portion that emits light and a light-receiving portion that receives light emitted from the light-emitting portion, and is located on the peripheral portion of the substrate held on the holding surface. The light-emitting portion and the above-mentioned In the detection space between the light-receiving parts, the eccentricity of the substrate relative to the rotation axis is measured; the centering unit moves the substrate on the holding surface relative to the base, so that the center of the substrate is close to the above-mentioned rotation axis; and an atmosphere replacement unit, which replaces the atmosphere existing in the detection space with the atmosphere outside the detection space.

Description

基板處理裝置及基板位置調整方法Substrate processing apparatus and substrate position adjustment method

本發明係關於一種處理基板之基板處理裝置、與使用該基板處理裝置之基板位置調整方法。成為處理對象之基板包含例如半導體晶圓、液晶顯示裝置及有機EL(Electroluminescence：電致發光)顯示裝置等FPD(Flat Panel Display：平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。The present invention relates to a substrate processing apparatus for processing a substrate, and a substrate position adjustment method using the substrate processing apparatus. Substrates to be processed include, for example, semiconductor wafers, liquid crystal display devices, and organic EL (Electroluminescence) display devices and other FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disks. Substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.

日本專利特開2017-11015號公報中，揭示有一種基板處理裝置，其包含小於基板之圓板狀旋轉夾盤、沿基板之下表面周緣部之環狀加熱器、及對基板之上表面供給處理液之噴嘴。該基板處理裝置中，一面將基板之周緣部加熱，一面進行以處理液處理基板之上表面之周緣部之基板處理。Japanese Patent Laid-Open No. 2017-11015 discloses a substrate processing apparatus including a disk-shaped spin chuck smaller than a substrate, an annular heater along a peripheral portion of the lower surface of the substrate, and a supply to the upper surface of the substrate Nozzle for treatment liquid. In this substrate processing apparatus, while heating the peripheral portion of the substrate, the substrate processing is performed to treat the peripheral portion of the upper surface of the substrate with the processing liquid.

日本專利特開2017-11015號公報所揭示之基板處理裝置中，將基板配置於旋轉夾盤時，有時會將基板偏心配置。In the substrate processing apparatus disclosed in Japanese Patent Laid-Open No. 2017-11015, when the substrate is arranged on the spin chuck, the substrate may be arranged eccentrically.

因此，本發明之一個目的在於提供一種可良好地減少基板之偏心量之基板處理裝置及基板位置調整方法。Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate position adjustment method which can satisfactorily reduce the eccentric amount of the substrate.

本發明之一實施形態提供一種基板處理裝置，其具備：基座，其具有將圓板狀基板以水平姿勢保持之保持面；旋轉單元，其使上述基座繞鉛直之旋轉軸線旋轉；加熱單元，其將保持於上述保持面之基板之周緣部加熱；偏心量測定單元，其具有發出光之發光部及接受自上述發光部發出之光之受光部，於保持於上述保持面之基板之周緣部位於上述發光部與上述受光部之間之檢測空間內時，測定該基板相對於上述旋轉軸線之偏心量；定心單元，其使上述保持面上之基板相對於上述基座移動，而使該基板之中心部靠近上述旋轉軸線；及氛圍置換單元，其以上述檢測空間外之氛圍置換存在於上述檢測空間內之氛圍。One embodiment of the present invention provides a substrate processing apparatus including: a base having a holding surface for holding a disk-shaped substrate in a horizontal posture; a rotating unit that rotates the base around a vertical axis of rotation; and a heating unit , which heats the peripheral edge of the substrate held on the above-mentioned holding surface; the eccentricity measuring unit has a light-emitting part that emits light and a light-receiving part that receives light emitted from the above-mentioned light-emitting part, on the peripheral edge of the substrate held on the above-mentioned holding surface When the part is located in the detection space between the light-emitting part and the light-receiving part, the eccentricity of the substrate relative to the rotation axis is measured; the centering unit moves the substrate on the holding surface relative to the base, so that the The center portion of the base plate is close to the rotation axis; and an atmosphere replacement unit, which replaces the atmosphere existing in the detection space with the atmosphere outside the detection space.

該基板處理裝置中，於保持於保持面之基板之周緣部位於發光部與受光部之間時，偏心量測定單元測定基板相對於基座之旋轉軸線之偏心量。基於該偏心量，定心單元以基板之中心部靠近旋轉軸線之方式，使基板相對於基座移動，藉此減少基板之偏心量。In this substrate processing apparatus, the eccentricity measuring unit measures the eccentricity of the substrate with respect to the rotational axis of the base when the peripheral edge of the substrate held on the holding surface is located between the light-emitting portion and the light-receiving portion. Based on the eccentric amount, the centering unit moves the substrate relative to the base in such a way that the center portion of the substrate is close to the rotation axis, thereby reducing the eccentric amount of the substrate.

由於基板之周緣部藉由加熱單元加熱，故於基板之周緣部附近之空間內產生氛圍波動。詳細而言，與基板之周緣部相接之溫度相對較高之氛圍與其周圍之氛圍混合，將氛圍攪亂。因氛圍被攪亂，基板之周緣部附近之空間之折射率產生不均。Since the peripheral portion of the substrate is heated by the heating unit, atmospheric fluctuations are generated in the space near the peripheral portion of the substrate. Specifically, the relatively high-temperature atmosphere in contact with the peripheral portion of the substrate is mixed with the surrounding atmosphere, and the atmosphere is disturbed. When the atmosphere is disturbed, the refractive index of the space near the peripheral portion of the substrate is uneven.

由於基板之偏心量於基板之周緣部位於發光部與受光部之間之檢測空間之狀態下測定，故於檢測空間內亦會產生氛圍波動，檢測空間之折射率產生不均。當空間之折射率產生不均時，發光部發出之光之到達位置偏移，偏心量測定單元之檢測精度惡化。Since the eccentricity of the substrate is measured when the peripheral edge of the substrate is located in the detection space between the light-emitting part and the light-receiving part, atmospheric fluctuations will also occur in the detection space, and the refractive index of the detection space will be uneven. When the refractive index of the space is uneven, the arrival position of the light emitted by the light-emitting portion is shifted, and the detection accuracy of the eccentricity measuring unit is deteriorated.

因此，若為使用氛圍置換單元，以檢測空間外之氛圍置換存在於檢測空間內之氛圍之構成，則基板之周緣部位於檢測空間內時，可消除檢測空間內之氛圍波動。其結果，可提高偏心量測定單元之檢測精度，故可良好地減少基板之偏心量。Therefore, if the atmosphere replacement unit is used to replace the atmosphere existing in the detection space with the atmosphere outside the detection space, when the peripheral edge of the substrate is located in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentric amount measuring unit can be improved, so that the eccentric amount of the substrate can be reduced favorably.

本發明之一實施形態中，上述氛圍置換單元包含朝上述檢測空間供給上述氣體之氣體供給單元。因此，檢測空間內之氛圍被自氣體供給單元供給之氣體擠出，而由自氣體供給單元供給之氣體良好地置換。In one embodiment of the present invention, the atmosphere replacement unit includes a gas supply unit for supplying the gas to the detection space. Therefore, the atmosphere in the detection space is squeezed out by the gas supplied from the gas supply unit, and replaced well by the gas supplied from the gas supply unit.

本發明之一實施形態中，上述加熱單元包含與保持於上述保持面之基板之周緣部對向之加熱器。上述氣體供給單元於上述檢測空間內，朝保持於上述保持面之基板之周緣部與上述加熱器之間之部分噴出氣體。In one embodiment of the present invention, the heating unit includes a heater facing the peripheral edge portion of the substrate held on the holding surface. The gas supply unit ejects gas toward a portion between the peripheral edge portion of the substrate held on the holding surface and the heater in the detection space.

基板之周緣部與加熱器之間之氛圍易由加熱器加熱，易產生與周圍氛圍之溫度差。因此，基板之周緣部與加熱器之間之氛圍尤其容易發生波動。因此，若朝基板之周緣部與加熱器之間之空間噴出氣體，則可有效置換引起檢測空間內之波動之基板之周緣部與加熱器之間之氛圍。因此，可進而消除檢測空間內之氛圍波動。The atmosphere between the peripheral portion of the substrate and the heater is easily heated by the heater, and a temperature difference with the surrounding atmosphere is easily generated. Therefore, the atmosphere between the peripheral portion of the substrate and the heater is particularly likely to fluctuate. Therefore, if the gas is ejected toward the space between the peripheral portion of the substrate and the heater, the atmosphere between the peripheral portion of the substrate and the heater that causes fluctuations in the detection space can be effectively replaced. Therefore, the fluctuation of the atmosphere in the detection space can be further eliminated.

本發明之一實施形態中，上述氣體供給單元包含沿上述發光部與上述受光部之對向方向排列之複數個氣體噴出口。因此，藉由自沿對向方向排列之複數個氣體噴出口噴出之氣體，不僅置換基板之周緣部附近之部分氛圍，亦置換檢測空間全體之氛圍。因此，可提高偏心量測定單元之檢測精度。In one embodiment of the present invention, the gas supply unit includes a plurality of gas ejection ports arranged in a direction opposite to the light-emitting portion and the light-receiving portion. Therefore, the gas ejected from the plurality of gas ejection ports arranged in the opposite direction not only replaces part of the atmosphere near the peripheral edge of the substrate, but also replaces the entire atmosphere of the detection space. Therefore, the detection accuracy of the eccentricity measuring unit can be improved.

本發明之一實施形態中，上述氣體供給單元包含：各自具有複數個上述氣體噴出口之複數個固定氣體噴嘴、及供共通安裝複數個上述固定氣體噴嘴之安裝板。且，上述固定氣體噴嘴包含：安裝於上述安裝板之安裝部、及與上述安裝部一體形成，設置有上述氣體噴出口之噴出部。In one embodiment of the present invention, the gas supply unit includes a plurality of fixed gas nozzles each having a plurality of the gas ejection ports, and a mounting plate on which the plurality of the fixed gas nozzles are commonly mounted. Moreover, the said fixed gas nozzle includes the attachment part attached to the said attachment plate, and the ejection part formed integrally with the said attachment part and provided with the said gas ejection port.

複數個固定氣體噴嘴安裝於安裝板，一體形成固定氣體噴嘴之安裝部及噴出部。因此，可將固定氣體噴嘴牢固地固定於安裝板，可將固定氣體噴嘴彼此之位置關係牢固地固定。因此，可準確地朝檢測空間供給氣體。A plurality of fixed gas nozzles are mounted on the mounting plate, and integrally form the mounting portion and the ejection portion of the fixed gas nozzles. Therefore, the fixed gas nozzles can be firmly fixed to the mounting plate, and the positional relationship between the fixed gas nozzles can be firmly fixed. Therefore, the gas can be accurately supplied to the detection space.

本發明之一實施形態中，上述氣體供給單元包含移動氣體噴嘴頭，其係與上述發光部及上述受光部一起移動，且對上述檢測空間供給氣體者，且於保持於上述保持面之基板之周緣部位於上述檢測空間內之檢測位置、與保持於上述保持面之基板之周緣部位於上述檢測空間外之退避位置之間移動。因此，移動氣體噴嘴位於檢測位置時，對檢測空間噴出氣體，以氣體置換檢測空間內之空氣，藉此可提高偏心量測定單元之檢測精度。藉此，可良好地減少基板之偏心量。In one embodiment of the present invention, the gas supply unit includes a moving gas nozzle head that moves together with the light-emitting portion and the light-receiving portion to supply gas to the detection space, and is located on the substrate held on the holding surface. The peripheral edge portion moves between a detection position in the detection space and a retraction position in which the peripheral edge portion of the substrate held on the holding surface is located outside the detection space. Therefore, when the moving gas nozzle is located at the detection position, the gas is ejected into the detection space, and the air in the detection space is replaced by the gas, thereby improving the detection accuracy of the eccentricity measurement unit. Thereby, the amount of eccentricity of the substrate can be reduced favorably.

本發明之一實施形態中，上述基板處理裝置進而具備收容上述基座之腔室。且，上述氛圍置換單元包含給排氣單元，其進行向上述腔室內之空間給氣、及自上述腔室內之空氣的排氣。因此，於對腔室內之空間之給氣及排氣時，可以檢測空間外之氛圍良好地置換檢測空間內之氛圍。In one embodiment of the present invention, the substrate processing apparatus further includes a chamber for accommodating the susceptor. Moreover, the said atmosphere replacement|exchange means contains the supply-exhaust means which supplies air to the space in the said chamber, and discharges the air from the said chamber. Therefore, when supplying and exhausting air to the space in the chamber, the atmosphere outside the detection space can be satisfactorily replaced with the atmosphere in the detection space.

本發明之一實施形態中，上述基板處理裝置進而包含防護件，其係包圍保持於上述保持面之基板者，且構成為於上述防護件之上端部位於較該基板之上表面上方之上位置、與上述防護件之上端部位於較該基板之上表面下方之下位置之間移動。上述給排氣單元包含：排氣管，其將上述腔室內之氛圍排氣；及氣流形成單元，其對上述腔室內供給氛圍，於上述腔室內形成朝向上述排氣管之氣流。且，上述防護件如下切換上述氣流之路徑：上述防護件位於上述上位置時，上述氣流通過保持於上述保持面之基板之周緣部與上述防護件之間，上述防護件位於上述下位置時，上述氣流通過上述防護件之外側。In one embodiment of the present invention, the substrate processing apparatus further includes a guard that surrounds the substrate held on the holding surface, and is configured so that the upper end of the guard is positioned above the upper surface of the substrate , and the upper end of the above-mentioned protective piece is moved between a position lower than the upper surface of the base plate. The air supply and exhaust unit includes: an exhaust pipe for exhausting the atmosphere in the chamber; and an air flow forming unit for supplying the atmosphere to the chamber and forming an air flow in the chamber toward the exhaust pipe. And, the guard member switches the path of the airflow as follows: when the guard member is located at the upper position, the airflow passes between the peripheral edge portion of the base plate held on the holding surface and the guard member, and when the guard member is located at the lower position, The above-mentioned air flow passes through the outside of the above-mentioned guard.

根據該構成，防護件位於上位置時，腔室內朝向排氣管之氣流通過基板之周緣部與防護件之間，防護件位於下位置時，氣流通過防護件之外側。According to this configuration, when the guard is at the upper position, the airflow in the chamber toward the exhaust pipe passes between the peripheral edge of the substrate and the guard, and when the guard is at the lower position, the airflow passes through the outside of the guard.

因此，藉由將防護件配置於上位置，可以由氣流攜帶之氣體置換基板之周緣部周圍之氛圍。藉此，基板之周緣部位於檢測空間內時，可消除檢測空間之氛圍波動。其結果，可提高偏心量測定單元之檢測精度，故可良好地減少基板之偏心量。Therefore, by arranging the guard at the upper position, the atmosphere around the peripheral portion of the substrate can be replaced by the gas carried by the airflow. Thereby, when the peripheral portion of the substrate is located in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentric amount measuring unit can be improved, so that the eccentric amount of the substrate can be reduced favorably.

本發明之一實施形態中，上述定心單元包含：升降機，其構成為抬起保持於上述保持面之基板，或將該抬起之基板載置於上述保持面；及升降機水平移動機構，其藉由使上述升降機水平移動，而使該基板之中心部靠近上述旋轉軸線。In one embodiment of the present invention, the centering unit includes: a lifter configured to lift the substrate held on the holding surface, or place the lifted substrate on the holding surface; and a lifter horizontal movement mechanism, which By moving the elevator horizontally, the center portion of the base plate is brought close to the rotation axis.

根據該構成，於由升降機抬起保持於保持面之基板之狀態下，使升降機水平移動，而使基板之中心部靠近旋轉軸線，藉此可減少偏心量。According to this configuration, when the lifter lifts the substrate held on the holding surface, the lifter is moved horizontally so that the center portion of the substrate is brought close to the rotation axis, thereby reducing the amount of eccentricity.

本發明之一實施形態中，上述升降機設置有複數個。複數個上述升降機具有自較保持於上述保持面之基板下方，與該基板對向之對向部。且，上述定心單元進而包含升降機鉛直移動機構，其使上述對向部於較上述保持面上方之第1位置、與較上述保持面下方之第2位置之間，於鉛直方向移動。In one Embodiment of this invention, the said elevator is provided in plural. The plurality of the lifters have opposing portions facing the substrate from below the substrate held on the holding surface. The centering unit further includes an elevator vertical movement mechanism that moves the opposing portion in the vertical direction between a first position above the holding surface and a second position below the holding surface.

根據該構成，藉由使複數個升降機移動至第1位置，可以複數個升降機抬起基板，並自下方支持。藉由使支持基板之複數個升降機相對於基座朝水平方向移動，而使基板之中心部靠近旋轉軸線，可減少偏心量。其後，藉由使複數個升降機移動至第2位置，可將基板保持於保持面。According to this configuration, by moving the plurality of lifters to the first position, the plurality of lifters can lift the substrate and support it from below. By moving the plurality of lifts supporting the substrate in the horizontal direction relative to the base, the center portion of the substrate is brought close to the axis of rotation, thereby reducing the amount of eccentricity. After that, by moving the plurality of lifts to the second position, the substrate can be held on the holding surface.

本發明之一實施形態中，上述升降機設置有複數個。複數個上述升降機包含：第1升降機，其具有自水平方向與保持於上述保持面之基板之周緣部對向之第1對向面；及第2升降機，其具有自與上述第1對向面為相反側，自水平方向與保持於上述保持面之基板之周緣部對向的第2對向面。上述升降機水平移動機構包含：第1升降機水平移動機構，其使上述第1升降機及上述第2升降機個別地水平移動；及第2升降機水平移動機構，其使上述第1升降機及上述第2升降機一體地水平移動。上述第1對向面及上述第2對向面以隨著朝向上方而互相離開之方式，相對於水平方向傾斜。In one Embodiment of this invention, the said elevator is provided in plural. The plurality of said elevators include: a first elevator having a first facing surface that faces a peripheral edge portion of a substrate held on the holding surface from a horizontal direction; and a second elevator having a first facing surface from a horizontal direction The opposite side is a second opposing surface that faces the peripheral edge portion of the substrate held on the holding surface from the horizontal direction. The elevator horizontal movement mechanism includes: a first elevator horizontal movement mechanism that horizontally moves the first elevator and the second elevator individually; and a second elevator horizontal movement mechanism that integrates the first elevator and the second elevator move horizontally. The said 1st opposing surface and the said 2nd opposing surface are inclined with respect to a horizontal direction so that it may separate from each other as it goes up.

根據該構成，第1水平移動機構可使第1升降機及第2升降機於水平方向個別地移動。藉由第1水平移動機構，以第1升降機及第2升降機互相靠近之方式，使第1升降機及第2升降機於水平方向移動，藉此，第1對向面及第2對向面與基板之周緣部抵接。第1對向面及第2對向面以隨著朝向上方而互相離開之方式，相對於水平方向傾斜。因此，第1對向面及第2對向面可自保持面抬起基板，並自下方支持。藉由一面維持由第1對向面及第2對向面自下方支持基板之狀態，一面利用第2升降機水平移動機構，使第1升降機及第2升降機向水平方向移動，可使基板之中心部靠近旋轉軸線。藉此，可減少偏心量。According to this configuration, the first horizontal movement mechanism can individually move the first elevator and the second elevator in the horizontal direction. By the first horizontal movement mechanism, the first lift and the second lift are moved in the horizontal direction in such a way that the first lift and the second lift are close to each other, whereby the first and second opposing surfaces and the substrate the peripheral part of the contact. The first opposing surface and the second opposing surface are inclined with respect to the horizontal direction so as to be separated from each other as they go upward. Therefore, the first opposing surface and the second opposing surface can lift the substrate from the holding surface and support it from below. By maintaining the state that the substrate is supported from below by the first opposing surface and the second opposing surface, the center of the substrate can be moved by using the second elevator horizontal moving mechanism to move the first elevator and the second elevator in the horizontal direction. The part is close to the axis of rotation. Thereby, the amount of eccentricity can be reduced.

本發明之另一實施形態提供一種基板位置調整方法，其包含：基板保持步驟，其以加熱器與圓板狀基板之周緣部對向之方式，將上述基板以水平姿勢保持於基板之保持面；氛圍置換步驟，其於上述基板之周緣部位於具有發光部及受光部之感測器之上述發光部及上述受光部之間之空間即檢測空間之狀態下，以上述檢測空氣外之氛圍置換存在於上述檢測空間之氛圍；偏心量測定步驟，其於執行上述氛圍置換步驟執行之過程中，一面使上述基座繞鉛直之旋轉軸線旋轉，一面藉由上述感測器檢測該基板相對於上述旋轉軸線之偏心量；及對位步驟，其根據藉由上述偏心量測定步驟檢測出之偏心量，使上述基板相對於上述基座移動，藉此使上述基板之中心部靠近上述旋轉軸線。Another embodiment of the present invention provides a method for adjusting the position of a substrate, which includes a substrate holding step of holding the substrate in a horizontal position on a holding surface of the substrate such that a heater faces a peripheral edge portion of the disk-shaped substrate. The atmosphere replacement step, in the state where the peripheral edge of the substrate is located in the space between the light-emitting portion and the light-receiving portion of the sensor having the light-emitting portion and the light-receiving portion, that is, the detection space, replace with the atmosphere outside the detection air The atmosphere existing in the detection space; the eccentricity measuring step, in the process of executing the atmosphere replacement step, while the base is rotated around the vertical axis of rotation, the sensor detects the substrate relative to the above-mentioned an eccentric amount of a rotation axis; and an alignment step of moving the substrate relative to the base according to the eccentric amount detected by the eccentric amount measuring step, thereby bringing the center portion of the substrate close to the rotation axis.

根據該方法，藉由氛圍置換步驟，將存在於發光部及受光部間之檢測空間之氛圍置換至檢測空間外，藉此可消除檢測空間內之氛圍波動。若一面繼續置換存在於檢測空間之氛圍，一面藉由感測器測定基板之偏心量，則可於消除檢測空間內之氛圍波動之狀態下測定偏心量。藉此，可精度良好地檢測偏心量，故可良好地減少基板之偏心量。According to this method, the atmosphere in the detection space between the light-emitting part and the light-receiving part is replaced outside the detection space by the atmosphere replacement step, thereby eliminating the fluctuation of the atmosphere in the detection space. If the eccentricity of the substrate is measured by the sensor while continuing to replace the atmosphere existing in the detection space, the eccentricity can be measured while eliminating the fluctuation of the atmosphere in the detection space. Thereby, since the eccentric amount can be detected with high accuracy, the eccentric amount of the substrate can be reduced favorably.

根據本發明之其他實施形態，上述氛圍置換步驟包含朝上述檢測空間供給上述氣體之氣體供給步驟。因此，存在於檢測空間之氛圍被自氣體供給單元供給之氣體擠出，而由自氣體供給單元供給之氣體良好地置換。According to another embodiment of the present invention, the atmosphere replacement step includes a gas supply step of supplying the gas to the detection space. Therefore, the atmosphere existing in the detection space is squeezed out by the gas supplied from the gas supply unit, and replaced favorably by the gas supplied from the gas supply unit.

根據本發明之另一實施形態，上述氛圍置換步驟包含氣流形成步驟，該氣流形成步驟藉由將防護件之上端部配置於上位置，而於收容上述防護件及上述基座之腔室內，形成通過上述基板之周緣部與上述防護件之間流向排氣管之氣流，且上述防護件係包圍上述基板者，且構成為於該防護件之上端部於位於較該基板之上表面上方之上位置、與該防護件之上端部位於較該基板之上表面下方之下位置之間移動。According to another embodiment of the present invention, the above-mentioned atmosphere replacement step includes an air flow forming step, and the air flow forming step is formed by arranging the upper end of the protective member at an upper position in the cavity for accommodating the above-mentioned protective member and the above-mentioned base. The airflow to the exhaust pipe passes between the peripheral edge portion of the base plate and the guard, and the guard surrounds the base plate and is configured to be located above the upper surface of the base plate at the upper end of the guard moving between the position and the position where the upper end of the guard is located below the upper surface of the substrate.

根據該方法，防護件位於上位置時，腔室內朝向排氣管之氣流通過周緣部與防護件之間，防護件位於下位置時，氣流通過防護件之外側。因此，藉由將防護件配置於上位置，可以由氣流攜帶之氣體置換基板之周緣部附近之氛圍。因此，基板之周緣部位於檢測空間內時，可消除檢測空間之氛圍波動。其結果，可提高偏心量測定單元之檢測精度，故可良好地減少基板之偏心量。According to this method, when the guard is at the upper position, the airflow in the chamber toward the exhaust pipe passes between the peripheral edge and the guard, and when the guard is at the lower position, the air flows through the outside of the guard. Therefore, by arranging the guard at the upper position, the atmosphere in the vicinity of the peripheral portion of the substrate can be replaced by the gas carried by the airflow. Therefore, when the peripheral edge of the substrate is located in the detection space, the fluctuation of the atmosphere in the detection space can be eliminated. As a result, the detection accuracy of the eccentric amount measuring unit can be improved, so that the eccentric amount of the substrate can be reduced favorably.

本發明之上述或進而其他目的、特徵及效果藉由以下參照隨附圖式敘述之實施形態之說明而明確。The above-mentioned or other objects, features, and effects of the present invention will be clarified from the following description of the embodiments described with reference to the accompanying drawings.

＜第1實施形態＞ 圖1係顯示本發明之一實施形態之基板處理裝置1之內部構成之圖解俯視圖。 <First Embodiment> FIG. 1 is a schematic plan view showing the internal structure of a substrate processing apparatus 1 according to an embodiment of the present invention.

基板處理裝置1係對矽晶圓等基板W進行逐片處理之單片式裝置。本實施形態中，基板W為圓板狀基板。基板W例如為半導體晶圓。The substrate processing apparatus 1 is a monolithic apparatus for processing substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate W is, for example, a semiconductor wafer.

基板處理裝置1包含：複數個處理單元2，其等以處理液處理基板W；裝載埠LP，其供載置收容由處理單元2處理之複數片基板W之載體C；搬送機械手IR及CR，其等於裝載埠LP與處理單元2之間搬送基板W；及控制器3，其控制基板處理裝置1。The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing substrates W with a processing liquid; a loading port LP for mounting a carrier C for accommodating a plurality of substrates W processed by the processing units 2; and transfer robots IR and CR , which is equal to conveying the substrate W between the load port LP and the processing unit 2 ; and the controller 3 , which controls the substrate processing apparatus 1 .

搬送機械手IR於載體C與搬送機械手CR之間搬送基板W。搬送機械手CR於搬送機械手IR與處理單元2之間搬送基板W。複數個處理單元2例如具有相同構成。The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2 . The plurality of processing units 2 have the same configuration, for example.

各處理單元2包含：旋轉夾盤6，其一面水平保持基板W一面使基板W繞旋轉軸線A1(鉛直軸線)旋轉；處理杯7，其於俯視時包圍旋轉夾盤6；及腔室8，其收容旋轉夾盤6及處理杯。旋轉軸線A1為通過基板W之中央部之鉛直直線。Each processing unit 2 includes: a spin chuck 6 which horizontally holds the substrate W while rotating the substrate W around a rotation axis A1 (vertical axis); a processing cup 7 which surrounds the spin chuck 6 in plan view; and a chamber 8, It accommodates the rotating chuck 6 and the processing cup. The rotation axis A1 is a vertical straight line passing through the central portion of the substrate W. As shown in FIG.

腔室8中，形成有用以供搬送機械手CR搬入基板W或搬出基板W之出入口。於腔室8，配備有開閉該出入口之擋板單元(未圖示)。In the chamber 8 , an entrance and exit through which the substrate W is loaded or unloaded by the transfer robot CR is formed. The chamber 8 is provided with a shutter unit (not shown) for opening and closing the entrance.

圖2係用以說明處理單元2之構成例之模式圖。圖3係旋轉夾盤6及其周邊之模式性俯視圖。FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2 . FIG. 3 is a schematic plan view of the spin chuck 6 and its surroundings.

旋轉夾盤6一面水平保持基板W，一面使基板W繞通過基板W之中央部之鉛直之旋轉軸線A1(鉛直軸線)旋轉。旋轉夾盤6為一面水平保持基板W，一面使基板W繞旋轉軸線A1旋轉之基板保持旋轉單元之一例。旋轉夾盤6包含旋轉基座21(基座)、旋轉軸22、旋轉馬達23及馬達外殼24。The spin chuck 6 rotates the substrate W around a vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W while holding the substrate W horizontally. The spin chuck 6 is an example of a substrate holding rotation unit that rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally. The spin chuck 6 includes a spin base 21 (base), a spin shaft 22 , a spin motor 23 and a motor housing 24 .

旋轉基座21具有將基板W以水平姿勢保持之保持面21a。保持面21a例如於俯視時為圓形狀。保持面21a例如為旋轉基座21之上表面。保持面21a之直徑小於基板W之直徑。The rotation base 21 has the holding surface 21a which holds the board|substrate W in a horizontal attitude|position. The holding surface 21a has a circular shape in plan view, for example. The holding surface 21 a is, for example, the upper surface of the rotating base 21 . The diameter of the holding surface 21a is smaller than the diameter of the substrate W.

旋轉軸22為中空軸。旋轉軸22沿旋轉軸線A1於鉛直方向延伸。旋轉軸線A1為通過旋轉基座21之保持面21a之中央部之鉛直軸線。旋轉基座21與旋轉軸22之上端連結。旋轉基座21外嵌至旋轉軸22之上端。The rotating shaft 22 is a hollow shaft. The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The rotation axis A1 is a vertical axis passing through the central portion of the holding surface 21 a of the rotation base 21 . The rotating base 21 is connected to the upper end of the rotating shaft 22 . The rotating base 21 is externally embedded on the upper end of the rotating shaft 22 .

於旋轉基座21及旋轉軸22，插通有吸引路徑25。吸引路徑25具有自旋轉基座21之保持面21a之中心露出之吸引口25a。吸引路徑25與吸引配管26連結。吸引配管26與真空泵等吸引單元27連結。A suction path 25 is inserted through the rotating base 21 and the rotating shaft 22 . The suction path 25 has a suction port 25a exposed from the center of the holding surface 21a of the spin base 21 . The suction path 25 is connected to the suction pipe 26 . The suction piping 26 is connected to a suction unit 27 such as a vacuum pump.

於吸引配管26，介裝有用以開閉其路徑之吸引閥28。藉由打開吸引閥28，吸引配置於旋轉基座21之保持面21a之基板W，藉此將基板W吸附於保持面21a。旋轉基座21為基板保持單元之一例。保持面21a亦稱為吸附基板W之吸附面。旋轉夾盤6亦稱為使基板W吸附於吸附面之吸附裝置。A suction valve 28 for opening and closing the path of the suction pipe 26 is interposed. By opening the suction valve 28, the substrate W disposed on the holding surface 21a of the spin base 21 is sucked, thereby attracting the substrate W to the holding surface 21a. The spin base 21 is an example of a substrate holding unit. The holding surface 21a is also referred to as a suction surface for suctioning the substrate W. As shown in FIG. The spin chuck 6 is also called a suction device for sucking the substrate W to the suction surface.

藉由旋轉馬達23使旋轉軸22旋轉，旋轉基座21旋轉。藉此，基板W與旋轉基座21一起繞旋轉軸線A1旋轉。旋轉馬達23為使基板W繞旋轉軸線A1旋轉之旋轉單元之一例。馬達外殼24收容旋轉馬達23及旋轉軸22。旋轉軸22之上端自馬達外殼24突出。The rotating shaft 22 is rotated by the rotating motor 23 to rotate the rotating base 21 . Thereby, the substrate W rotates around the rotation axis A1 together with the spin base 21 . The rotation motor 23 is an example of a rotation unit that rotates the substrate W around the rotation axis A1. The motor case 24 accommodates the rotary motor 23 and the rotary shaft 22 . The upper end of the rotating shaft 22 protrudes from the motor housing 24 .

處理杯7包含：複數個防護件30，其等接住自保持於旋轉基座21之保持面21a之基板W飛散之液體；複數個杯31，其等接住藉由複數個杯30朝下方引導之液體；排氣桶33，其於俯視時包圍複數個防護件30及複數個杯31；及排氣管34，其連結於排氣桶33。The processing cup 7 includes: a plurality of guards 30, which catch the liquid scattered from the substrate W held on the holding surface 21a of the rotating base 21; The liquid to be guided; the exhaust barrel 33 , which surrounds a plurality of guards 30 and a plurality of cups 31 in plan view; and an exhaust pipe 34 , which is connected to the exhaust barrel 33 .

本實施形態中，顯示設置有2個防護件30(第1防護件30A及第2防護件30B)、及2個杯31(第1杯31A及第2杯31B)之例。In the present embodiment, an example in which two guards 30 (a first guard 30A and a second guard 30B) and two cups 31 (a first cup 31A and a second cup 31B) are provided is shown.

第1杯31A及第2杯31B各自具有朝上打開之環狀槽之形態。Each of the first cup 31A and the second cup 31B has the form of an annular groove opened upward.

第1防護件30A以包圍旋轉基座21之方式配置。第2防護件30B以於較第1防護件30A更靠近旋轉基座21之位置，包圍旋轉基座21之方式配置。The first guard 30A is arranged so as to surround the rotating base 21 . The second guard 30B is arranged so as to surround the rotating base 21 at a position closer to the rotating base 21 than the first guard 30A.

第1防護件30A及第2防護件30B各自具有大致圓筒形狀。各防護件30之上端部以朝向旋轉基座21側(防護件30之中心側)之方式朝內側傾斜。The first guard 30A and the second guard 30B each have a substantially cylindrical shape. The upper end of each guard 30 is inclined inward so as to face the rotation base 21 side (the center side of the guard 30 ).

防護件30之中心側亦為基板W之旋轉徑向之內側。防護件30之中心側之相反側亦為基板W之旋轉徑向之外側。第1防護件30A及第2防護件30B配置於同軸上，防護件30之中心側為第1防護件30A之中心側，亦為第2防護件30B之中心側。The center side of the guard 30 is also the inner side in the rotational radial direction of the substrate W. As shown in FIG. The side opposite to the center side of the guard 30 is also the outer side in the rotational radial direction of the substrate W. As shown in FIG. The first guard 30A and the second guard 30B are arranged on the same axis, and the center side of the guard 30 is the center side of the first guard 30A and also the center side of the second guard 30B.

第1防護件30A以包圍旋轉基座21之方式配置。第2防護件30B(內側防護件)以於較第1防護件30A(外側防護件)更靠第1防護件30A之中心側，包圍旋轉基座21之方式配置。The first guard 30A is arranged so as to surround the rotating base 21 . The second guard 30B (inner guard) is arranged on the center side of the first guard 30A rather than the first guard 30A (outer guard) so as to surround the rotating base 21 .

詳細而言，第1防護件30A具有：俯視時包圍旋轉基座21之第1筒狀部35A、及自第1筒狀部之上端朝防護件30之中心側延伸之第1延設部36A。第1延設部36A具有以隨著朝向防護件30之中心側而朝向上方之方式，相對於水平方向傾斜之傾斜部。第1延設部36A於俯視時為環狀。Specifically, the first guard 30A includes a first cylindrical portion 35A surrounding the rotating base 21 in plan view, and a first extension portion 36A extending from the upper end of the first cylindrical portion toward the center of the guard 30 . The first extending portion 36A has an inclined portion inclined with respect to the horizontal direction so as to be directed upward toward the center side of the guard 30 . The first extending portion 36A is annular in plan view.

第2防護件30B包含：第2筒狀部35B，其配置於較第1筒狀部35A更靠防護件30之中心側，俯視時包圍旋轉基座21；及第2延設部36B，其自第2筒狀部35B之上端朝防護件30之中心側延伸。第2延設部36B自下方與第1延設部36A對向。第2延設部36B具有以隨著朝向防護件30之中心側而朝向上方之方式，相對於水平方向傾斜之傾斜部。第2延設部36B於俯視時為環狀。The second guard 30B includes: a second cylindrical portion 35B disposed on the center side of the guard 30 rather than the first cylindrical portion 35A and surrounding the rotating base 21 in plan view; and a second extending portion 36B It extends from the upper end of the second cylindrical portion 35B toward the center side of the guard 30 . The second extension portion 36B faces the first extension portion 36A from below. The second extending portion 36B has an inclined portion inclined with respect to the horizontal direction so as to be directed upward toward the center side of the guard 30 . The second extending portion 36B is annular in plan view.

第1杯31A與第2防護件30B一體形成，接住由第1防護件30A朝下方引導之處理液。第2杯31B接住由第2防護件30B朝下方引導之處理液。由第1杯31A接住之處理液由連結於第1杯31A下端之第1處理液回收路徑(未圖示)回收。由第2杯31B接住之處理液由連結於第2杯31B下端之第2處理液回收路徑(未圖示)回收。The first cup 31A is integrally formed with the second guard 30B, and receives the processing liquid guided downward by the first guard 30A. The second cup 31B receives the treatment liquid guided downward by the second guard 30B. The processing liquid received by the first cup 31A is recovered by a first processing liquid recovery path (not shown) connected to the lower end of the first cup 31A. The processing liquid received by the second cup 31B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cup 31B.

處理單元2包含使第1防護件30A及第2防護件30B分開升降之防護件升降單元37。防護件升降單元37使第1防護件30A及第2防護件30B於下位置與上位置之間個別升降。The processing unit 2 includes a guard lifting unit 37 that separates and lifts the first guard 30A and the second guard 30B. The guard lifting unit 37 individually lifts and lowers the first guard 30A and the second guard 30B between the lower position and the upper position.

第1防護件30A及第2防護件30B皆位於上位置時，自基板W飛散之處理液由第2防護件30B接住。第2防護件30B位於下位置，第1防護件30A位於上位置時，自基板W飛散之處理液由第1防護件30A接住。When both the first guard 30A and the second guard 30B are located at the upper position, the processing liquid scattered from the substrate W is received by the second guard 30B. When the second guard 30B is positioned at the lower position and the first guard 30A is positioned at the upper position, the processing liquid scattered from the substrate W is caught by the first guard 30A.

各防護件30之上位置為防護件30之上端位於較保持於旋轉夾盤6之基板W之位置即保持位置(圖2所示之基板W之位置)上方之位置。各防護件30之下位置為防護件30之上端位於較保持位置下方之位置。The upper position of each guard 30 is a position where the upper end of the guard 30 is located above the position of the substrate W held by the spin chuck 6 , that is, the holding position (the position of the substrate W shown in FIG. 2 ). The lower position of each guard 30 is a position where the upper end of the guard 30 is located below the holding position.

第1防護件30A及第2防護件30B皆位於下位置時，對應之搬送機械手CR可將基板W搬入至腔室8內，或自腔室8內搬出基板W。When both the first guard 30A and the second guard 30B are located at the lower position, the corresponding transfer robot CR can carry the substrate W into the chamber 8 or carry out the substrate W from the chamber 8 .

防護件升降單元37包含：使第1防護件30A升降之第1防護件升降單元；及使第2防護件30B升降之第2防護件升降單元。The guard lifting unit 37 includes: a first guard lifting unit that lifts the first guard 30A; and a second guard lifting unit that lifts the second guard 30B.

第1防護件升降單元之構成雖無特別限制，但第1防護件升降單元亦可包含例如缸體機構、滾珠螺桿機構、線性馬達機構、及齒條齒輪機構中之至少一者。Although the configuration of the first guard lifting unit is not particularly limited, the first guard lifting unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism.

第1防護件升降單元包含例如：馬達等第1致動器(未圖示)；及第1升降運動傳遞機構(未圖示)，其與第1防護件30A連結，將自第1致動器賦予之驅動力傳遞至第1防護件30A，使第1防護件30A升降。第1升降運動傳遞機構包含例如滾珠螺桿機構或齒條齒輪機構。The first guard lifting unit includes, for example: a first actuator (not shown) such as a motor; and a first lifting motion transmission mechanism (not shown), which is connected to the first guard 30A and will be actuated from the first The driving force given by the device is transmitted to the first guard 30A, and the first guard 30A is moved up and down. The first elevating motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

第2防護件升降單元之構成雖無特別限制，但第2防護件升降單元亦可包含例如缸體機構、滾珠螺桿機構、線性馬達機構、及齒條齒輪機構中之至少一者。Although the structure of the second guard lifting unit is not particularly limited, the second guard lifting unit may include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism.

第2防護件升降單元包含例如：馬達等第2致動器(未圖示)；及第2升降運動傳遞機構(未圖示)，其與第2防護件30B連結，將由第2致動器賦予之驅動力傳遞至第2防護件30B，使第2防護件30B升降。第2升降運動傳遞機構包含例如滾珠螺桿機構或齒條齒輪機構。The second guard lifting unit includes, for example: a second actuator (not shown) such as a motor; and a second lifting motion transmission mechanism (not shown), which is connected to the second guard 30B and will be driven by the second actuator The given driving force is transmitted to the second guard 30B to move the second guard 30B up and down. The second elevating motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

處理單元2進而包含：周緣噴嘴頭9、氣流形成單元10、加熱單元11、移動氣體噴嘴頭12、感測器13、及定心單元14。The processing unit 2 further includes: a peripheral nozzle head 9 , a gas flow forming unit 10 , a heating unit 11 , a moving gas nozzle head 12 , a sensor 13 , and a centering unit 14 .

周緣噴嘴頭9包含：對基板W之上表面之周緣部供給處理流體之複數個周緣噴嘴40、及支持複數個周緣噴嘴40之噴嘴支持構件41。基板W之上表面之周緣部為包含基板W之外周端(前端)與基板W之上表面中外周端附近部分之區域。The peripheral nozzle head 9 includes a plurality of peripheral nozzles 40 for supplying the processing fluid to the peripheral portion of the upper surface of the substrate W, and a nozzle support member 41 for supporting the plurality of peripheral nozzles 40 . The peripheral portion of the upper surface of the substrate W is an area including the outer peripheral end (front end) of the substrate W and the portion near the outer peripheral end in the upper surface of the substrate W. As shown in FIG.

於各周緣噴嘴40，連接有將處理流體引導至對應之周緣噴嘴40之處理流體配管42。於各處理流體配管42，介裝有開閉對應之處理流體配管42內之流路之處理流體閥43。To each peripheral nozzle 40, a processing fluid pipe 42 for guiding the processing fluid to the corresponding peripheral nozzle 40 is connected. In each processing fluid pipe 42, a processing fluid valve 43 for opening and closing the flow path in the corresponding processing fluid pipe 42 is interposed.

複數個周緣噴嘴40包含例如：第1周緣藥液噴嘴40A，其噴出APM(氨水過氧化氫水混合液)等藥液；第2周緣藥液噴嘴40B，其噴出氫氟酸(HF：氫氟酸)等藥液；周緣清洗液噴嘴40C，其噴出碳酸水等清洗液；及周緣氣體噴嘴40D，其噴出氮氣(N 2)等氣體。 The plurality of peripheral nozzles 40 include, for example, a first peripheral chemical liquid nozzle 40A that sprays chemical liquid such as APM (aqueous ammonia and hydrogen peroxide mixture), and a second peripheral chemical liquid nozzle 40B that sprays hydrofluoric acid (HF: hydrofluoric acid). Acid) and other chemicals; peripheral cleaning liquid nozzle 40C, which sprays cleaning liquid such as carbonated water; and peripheral gas nozzle 40D, which sprays gas such as nitrogen (N 2 ).

自第1周緣藥液噴嘴40A及第2周緣藥液噴嘴40B噴出之藥液不限於APM或氫氟酸。自周緣噴嘴40噴出之藥液亦可為例如含有硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH：四甲基氫氧化銨等)、界面活性劑、防腐劑中之至少一者之液體。作為將該等混合之藥液例，除APM外，列舉SPM(sulfuric acid／hydrogen peroxide mixture：硫酸/過氧化氫水混合液)等。APM亦稱為SC1(Standard Clean 1：標準清潔1)。The chemical liquid ejected from the first peripheral chemical liquid nozzle 40A and the second peripheral chemical liquid nozzle 40B is not limited to APM or hydrofluoric acid. The chemical liquid sprayed from the peripheral nozzle 40 may also contain, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (such as citric acid, oxalic acid, etc.), organic base (such as TMAH: four Methyl ammonium hydroxide, etc.), a liquid of at least one of surfactants and preservatives. As an example of these mixed chemical solutions, in addition to APM, SPM (sulfuric acid/hydrogen peroxide mixture: sulfuric acid/hydrogen peroxide mixture) etc. are mentioned. APM is also called SC1 (Standard Clean 1: Standard Clean 1).

自周緣清洗液噴嘴40C噴出之清洗液不限於碳酸水。自周緣噴嘴40噴出之清洗液亦可為含有DIW(Deionized Water：去離子水)、碳酸水、電解離子水、稀釋濃度(例如1 ppm以上且100 ppm以下)之鹽酸水、稀釋濃度(例如1 ppm以上且100 ppm以下)之氨水、還原水(氫水)中之至少一者之液體。The cleaning liquid sprayed from the peripheral cleaning liquid nozzle 40C is not limited to carbonated water. The cleaning liquid sprayed from the peripheral nozzle 40 may also be water containing DIW (Deionized Water: deionized water), carbonated water, electrolytic ionized water, hydrochloric acid water with a diluted concentration (for example, 1 ppm or more and 100 ppm or less), diluted concentration (for example, 1 A liquid of at least one of ammonia water and reduced water (hydrogen water) containing ppm or more and 100 ppm or less.

自周緣氣體噴嘴40D噴出之氣體不限於氮氣。自周緣噴嘴40噴出之氣體亦可為空氣。又，自周緣氣體噴嘴40D噴出之氣體亦可為氮氣以外之惰性氣體。氮氣以外之惰性氣體例如為氬氣等稀有氣體類。The gas ejected from the peripheral gas nozzle 40D is not limited to nitrogen gas. The gas ejected from the peripheral nozzle 40 can also be air. In addition, the gas ejected from the peripheral gas nozzle 40D may be an inert gas other than nitrogen. Inert gases other than nitrogen are rare gases such as argon, for example.

於噴嘴支持構件41連結有支持周緣噴嘴頭9之頭支持臂45。周緣噴嘴頭9藉由利用周緣噴嘴移動單元44使頭支持臂45移動，而於水平方向及鉛直方向移動。周緣噴嘴頭9以於中心位置與初始位置(退避位置)之間於水平方向移動之方式構成。若於周緣噴嘴頭9位於中央位置與初始位置之間之周緣位置時將複數個處理流體閥43中之任一者打開，則自對應之周緣噴嘴40供給與基板W之上表面之周緣部對應之處理流體。A head support arm 45 that supports the peripheral nozzle head 9 is connected to the nozzle support member 41 . The peripheral nozzle head 9 moves in the horizontal direction and the vertical direction by moving the head support arm 45 by the peripheral nozzle moving unit 44 . The peripheral nozzle head 9 is configured to move in the horizontal direction between the center position and the initial position (retracted position). If any one of the plurality of processing fluid valves 43 is opened when the peripheral nozzle head 9 is located at the peripheral position between the central position and the initial position, the corresponding peripheral nozzle 40 supplies the peripheral portion corresponding to the upper surface of the substrate W the processing fluid.

周緣噴嘴移動單元44包含：使頭支持臂45於鉛直方向移動之臂鉛直移動機構(未圖示)；及使頭支持臂45於水平方向移動之臂水平移動機構(未圖示)。The peripheral nozzle moving unit 44 includes: an arm vertical movement mechanism (not shown) for moving the head support arm 45 in the vertical direction; and an arm horizontal movement mechanism (not shown) for moving the head support arm 45 in the horizontal direction.

頭支持臂45可為直動式，亦可為旋動式。頭支持臂45為直動式臂之情形時，頭支持臂45於頭支持臂45之延設方向(頭支持臂45延伸之方向)水平移動。頭支持臂45為旋動式臂之情形時，藉由繞特定之鉛直軸線轉動而水平移動。The head support arm 45 may be a direct-acting type or a rotating type. When the head support arm 45 is a direct-acting arm, the head support arm 45 moves horizontally in the extending direction of the head support arm 45 (the direction in which the head support arm 45 extends). When the head support arm 45 is a swivel arm, it moves horizontally by rotating around a specific vertical axis.

臂水平移動機構亦可包含例如缸體機構、滾珠螺桿機構、線性馬達機構、及齒條齒輪機構之至少一者。臂水平移動機構包含例如：馬達等水平移動用致動器(未圖示)；及水平運動傳遞機構(未圖示)，其與頭支持臂45連結，將自該致動器賦予之驅動力傳遞至頭支持臂45，使頭支持臂45水平移動。水平運動傳遞機構包含例如滾珠螺桿機構或齒條齒輪機構。The arm horizontal movement mechanism may also include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm horizontal movement mechanism includes, for example, an actuator for horizontal movement such as a motor (not shown); and a horizontal movement transmission mechanism (not shown), which is connected to the head support arm 45 and transmits the driving force given from the actuator. It is transmitted to the head support arm 45 to move the head support arm 45 horizontally. The horizontal motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

臂鉛直移動機構亦可包含例如缸體機構、滾珠螺桿機構、線性馬達機構、及齒條齒輪機構之至少一者。臂鉛直移動機構包含例如：馬達等升降致動器(未圖示)；及升降運動傳遞機構(未圖示)，其與頭支持臂45連結，將由升降致動器賦予之驅動力傳遞至頭支持臂45，使頭支持臂45升降。升降運動傳遞機構包含例如滾珠螺桿機構或齒條齒輪機構。The arm vertical movement mechanism may also include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The arm vertical movement mechanism includes, for example, a lift actuator (not shown) such as a motor; and a lift motion transmission mechanism (not shown), which is connected to the head support arm 45 and transmits the driving force given by the lift actuator to the head The support arm 45 moves the head support arm 45 up and down. The elevating motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

腔室8包含：包圍旋轉夾盤6及處理杯7之大致四角筒狀之側壁8A；配置於較旋轉夾盤6上方之上壁8B；及支持旋轉夾盤6之下壁8C。The chamber 8 includes: a substantially quadrangular cylindrical side wall 8A surrounding the spin chuck 6 and the processing cup 7 ; an upper wall 8B disposed above the spin chuck 6 ; and a lower wall 8C supporting the spin chuck 6 .

氣流形成單元10包含：輸送清潔空氣(由過濾器過濾後之空氣)之FFU(風扇過濾單元)10A；及配置於在腔室8之上壁8B開口之送風口8a之下方之整流板10B。The airflow forming unit 10 includes: an FFU (Fan Filter Unit) 10A for supplying clean air (air filtered by a filter);

氣流形成單元10配置於送風口8a之上。送風口8a設置於腔室8之上端部，排氣管34配置於腔室8之下端部。排氣管34之上游端34a配置於腔室8中，排氣管34之下游端配置於腔室8外。The airflow forming unit 10 is arranged above the air supply port 8a. The ventilation port 8 a is provided at the upper end of the chamber 8 , and the exhaust pipe 34 is arranged at the lower end of the chamber 8 . The upstream end 34 a of the exhaust pipe 34 is disposed in the chamber 8 , and the downstream end of the exhaust pipe 34 is disposed outside the chamber 8 .

FFU10A經由送風口8a對腔室8內輸送清潔空氣。供給至腔室8內之清潔空氣被吸入至排氣管34內，自腔室8排出。藉此，於腔室8內形成自整流板10B朝下方流動之均勻的清潔空氣之下降流。對基板W之各種處理(後述之基板處理)於形成有清潔空氣之下降流之狀態下進行。如此，氣流形成單元10及排氣管34構成進行向腔室8內之空間給氣及自腔室8內之空間之排氣之給排氣單元。The FFU 10A sends clean air into the chamber 8 through the air supply port 8a. The clean air supplied into the chamber 8 is sucked into the exhaust pipe 34 and discharged from the chamber 8 . Thereby, a uniform downflow of clean air flowing downward from the rectifying plate 10B is formed in the chamber 8 . Various treatments on the substrate W (substrate treatments to be described later) are performed in a state in which a downflow of clean air is formed. In this way, the airflow forming unit 10 and the exhaust pipe 34 constitute an air supply and exhaust unit for supplying air to and exhausting from the space in the chamber 8 .

藉由氣流形成單元10形成於腔室8內之下降流之流量例如為1.3 m 3/min以上且7.0 m 3/min以下。 The flow rate of the downflow formed in the chamber 8 by the airflow forming unit 10 is, for example, 1.3 m 3 /min or more and 7.0 m 3 /min or less.

加熱單元11為將保持於保持面21a之基板W之周緣部加熱之單元。基板W之周緣部為基板W中包含外周端(前端)與外周端之附近部分之部分。The heating unit 11 is a unit for heating the peripheral portion of the substrate W held on the holding surface 21a. The peripheral portion of the substrate W is a portion of the substrate W that includes an outer peripheral end (front end) and a portion near the outer peripheral end.

加熱單元11包含：具有與基板W之下表面之周緣部對向之對向面50a之俯視圓環狀加熱器50、與對加熱器50內送出氮氣等氣體之氣體送出單元55。於加熱器50，經由饋電線56連接有電源等通電單元57。對向面50a與基板W之下表面隔開例如2 mm以上且5 mm以下之距離而對向。The heating unit 11 includes: a plan view annular heater 50 having a facing surface 50a facing the peripheral edge of the lower surface of the substrate W; An energizing means 57 such as a power source is connected to the heater 50 via a feeder 56 . The opposing surface 50a is opposed to the lower surface of the substrate W at a distance of, for example, 2 mm or more and 5 mm or less.

如圖3所示，亦可於處理單元2，設置具有對基板W之下表面供給處理流體之噴嘴之下側周緣噴嘴頭17，該情形時，於加熱器50設有收容下側周緣噴嘴頭17，將加熱器50之周向之一部分切除之缺口50b。As shown in FIG. 3 , the processing unit 2 may also be provided with a lower peripheral nozzle head 17 having a nozzle for supplying the processing fluid to the lower surface of the substrate W. In this case, the heater 50 is provided with a lower peripheral nozzle head for accommodating 17. A notch 50b which is partially cut out in the circumferential direction of the heater 50.

下側周緣噴嘴頭17包含：複數個下側周緣噴嘴75、與支持複數個下側周緣噴嘴75之噴嘴支持構件76。於各下側周緣噴嘴75，連接有將處理流體引導至對應之下側周緣噴嘴75之下側處理流體配管77。於各下側處理流體配管77，介裝有下側處理流體閥78，下側處理流體閥78開閉對應之下側處理流體配管77內之流路。The lower peripheral nozzle head 17 includes a plurality of lower peripheral nozzles 75 and a nozzle support member 76 that supports the plurality of lower peripheral nozzles 75 . To each of the lower peripheral nozzles 75 , pipes 77 for guiding the processing fluid to the lower side of the corresponding lower peripheral nozzles 75 are connected. A lower processing fluid valve 78 is interposed in each of the lower processing fluid pipes 77 , and the lower processing fluid valve 78 opens and closes a flow path in the corresponding lower processing fluid pipe 77 .

複數個下側周緣噴嘴75亦可以噴出與複數個周緣噴嘴40相同之液體之方式構成。具體而言，複數個下側周緣噴嘴75包含：噴出APM等藥液之第1下側周緣藥液噴嘴75A；噴出氫氟酸等藥液之第2下側周緣藥液噴嘴75B；及噴出碳酸水等清洗液之下側周緣清洗液噴嘴75C。作為自下側周緣噴嘴75噴出之處理流體，列舉與作為自周緣噴嘴40(參照圖2)噴出之處理流體之例列舉者相同者。The plurality of lower peripheral nozzles 75 may also be configured to eject the same liquid as the plurality of peripheral nozzles 40 . Specifically, the plurality of lower peripheral nozzles 75 include: a first lower peripheral chemical nozzle 75A for ejecting a chemical such as APM; a second lower peripheral chemical nozzle 75B for ejecting a chemical such as hydrofluoric acid; and a carbonic acid The lower peripheral edge cleaning liquid nozzle 75C of the cleaning liquid such as water. As the treatment fluid ejected from the lower peripheral nozzle 75, the same as those listed as the example of the treatment fluid ejected from the peripheral nozzle 40 (see FIG. 2 ).

參照圖2，氣體送出單元55包含：連結於加熱器50，對加熱器50內送入氣體之氣體供給配管58、與開閉氣體供給配管58內之流路之流路開閉閥59。2 , the gas delivery unit 55 includes a gas supply pipe 58 connected to the heater 50 and feeding gas into the heater 50 , and a flow path opening and closing valve 59 for opening and closing the flow path in the gas supply pipe 58 .

圖4係加熱單元11周邊之剖視圖。藉由氣體送出單元55送入至加熱器50內之氣體在形成於加熱器50內之加熱流路51內被加熱，自形成於加熱器50之氣體噴出口50c噴出。加熱器50藉由輻射熱與自氣體噴出口50c噴出之加熱氣體，將基板W之周緣部加熱。自氣體噴出口50c噴出之氣體之流量例如為40 L/min。FIG. 4 is a cross-sectional view of the periphery of the heating unit 11 . The gas sent into the heater 50 by the gas sending unit 55 is heated in the heating flow path 51 formed in the heater 50 and ejected from the gas ejection port 50 c formed in the heater 50 . The heater 50 heats the peripheral portion of the substrate W by radiant heat and the heating gas ejected from the gas ejection port 50c. The flow rate of the gas ejected from the gas ejection port 50c is, for example, 40 L/min.

藉由氣體送出單元55送入至加熱器50之氣體不限於氮氣，亦可為空氣。又，該氣體亦可為氮氣以外之惰性氣體。The gas sent to the heater 50 by the gas sending unit 55 is not limited to nitrogen, and may be air. In addition, the gas may be an inert gas other than nitrogen.

加熱器50包含例如碳化矽(SiC)或陶瓷製加熱器本體部52、與內置於加熱器本體部52之發熱體53。發熱體53例如為鎳鉻合金線等電阻發熱體。該情形時，發熱體53為電阻發熱體之情形時，加熱器50為電阻式加熱器。發熱體53遍及加熱器50周向之大致全域設置。如圖3之例般，於加熱器50設置有缺口50b之情形時，發熱體53為於加熱器50之周向上設置有缺口部50b之位置具有端部之有端環狀。發熱體53藉由利用通電單元57(參照圖2)通電而發熱。與圖3之例不同，加熱器50亦可為於周向上具有端部之有端環狀。The heater 50 includes, for example, a heater body 52 made of silicon carbide (SiC) or ceramics, and a heating element 53 built in the heater body 52 . The heating element 53 is, for example, a resistance heating element such as a nichrome wire. In this case, when the heating element 53 is a resistance heating element, the heater 50 is a resistance heater. The heating element 53 is provided over substantially the entire area in the circumferential direction of the heater 50 . As shown in FIG. 3 , when the heater 50 is provided with the notch 50b, the heating element 53 is an end ring having an end at the position where the notch 50b is provided in the circumferential direction of the heater 50 . The heat generating body 53 generates heat by being energized by the energization unit 57 (see FIG. 2 ). Different from the example of FIG. 3 , the heater 50 may also be an end ring having an end portion in the circumferential direction.

加熱流路51在相對於發熱體53與基板W為相反側，遍及加熱器50之周向之大致全域設置。該情形時，由於在基板W與發熱體53之間不存在加熱流路51，故易均一將基板W加熱。又，自發熱體53到達基板W之輻射熱及傳熱不會被流過加熱流路51之惰性氣體阻礙。The heating flow path 51 is provided on the opposite side of the heating element 53 and the substrate W, and is provided over substantially the entire area in the circumferential direction of the heater 50 . In this case, since the heating flow path 51 does not exist between the substrate W and the heating element 53, the substrate W can be easily heated uniformly. In addition, radiation heat and heat transfer from the heating element 53 to the substrate W are not hindered by the inert gas flowing through the heating flow path 51 .

與圖4所示之例不同，加熱流路51亦可配設於基板W與發熱體53之間。Unlike the example shown in FIG. 4 , the heating flow path 51 may be arranged between the substrate W and the heating element 53 .

加熱器本體部52具備例如自下方朝上方依序積層之下構件52a、中構件52b及上構件52c。加熱流路51由形成於下構件52a之上表面之凹部、與中構件52b之下表面中封塞該凹部之部分形成。The heater main body 52 includes, for example, a lower member 52a, a middle member 52b, and an upper member 52c that are stacked in this order from bottom to top. The heating flow path 51 is formed by a concave portion formed on the upper surface of the lower member 52a and a portion of the lower surface of the middle member 52b that closes the concave portion.

複數個氣體噴出口50c以與基板W之下表面對向之方式，設置於加熱器50之對向面50a。複數個氣體噴出口50c於俯視時，於較發熱體53更靠旋轉軸線A1側及較發熱體53更靠與旋轉軸線A1為相反側之兩側，沿加熱器50之周向配置。複數個氣體噴出口50c經由形成於上構件52c及中構件52b之複數條連結流路52d之各者，與加熱流路51連接。The plurality of gas ejection ports 50c are provided on the opposing surface 50a of the heater 50 so as to face the lower surface of the substrate W. As shown in FIG. The plurality of gas ejection ports 50c are arranged along the circumferential direction of the heater 50 on both sides closer to the rotation axis A1 than the heating element 53 and opposite to the rotation axis A1 than the heating element 53 in plan view. The plurality of gas ejection ports 50c are connected to the heating flow path 51 through each of the plurality of connection flow paths 52d formed in the upper member 52c and the middle member 52b.

加熱器50藉由發熱體53之發熱，自對向面50a對基板W之下表面放射紅外線之熱線H，而將基板W加熱。由氣體送出單元55供給至加熱器50之氣流被導入至加熱流路51，於流過加熱流路51之過程中，由發熱體53預先加熱。加熱後之氣體經由各連結流路52d自對應之氣體噴出口50c朝基板W之下表面之周緣部與加熱器50之對向面50a之間之環狀空間SP1噴出。由於自氣體噴出口50c噴出之氣體已被預加熱，故有助於基板W之加熱。The heater 50 heats the substrate W by radiating heat rays H of infrared rays to the lower surface of the substrate W from the opposite surface 50 a by the heat generated by the heating element 53 . The gas flow supplied to the heater 50 by the gas delivery unit 55 is introduced into the heating flow path 51 , and is pre-heated by the heating element 53 in the process of flowing through the heating flow path 51 . The heated gas is ejected from the corresponding gas ejection port 50c through each connecting flow path 52d toward the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50 . Since the gas ejected from the gas ejection port 50c has been preheated, the heating of the substrate W is facilitated.

圖5係用以說明移動氣體噴嘴頭12及感測器13之構成之模式圖。移動氣體噴嘴頭12包含：具有朝大致水平方向噴出氣體之噴出口60a之移動氣體噴嘴60、與支持移動氣體噴嘴60之噴嘴支持構件61。於移動氣體噴嘴60，連接有將氣體引導至移動氣體噴嘴60之氣體配管62。於氣體配管62，介裝有開閉氣體配管62內之流路之氣體閥63。FIG. 5 is a schematic diagram for explaining the configuration of the moving gas nozzle head 12 and the sensor 13 . The moving gas nozzle head 12 includes a moving gas nozzle 60 having an ejection port 60 a for ejecting gas in a substantially horizontal direction, and a nozzle support member 61 for supporting the moving gas nozzle 60 . The moving gas nozzle 60 is connected to a gas pipe 62 that guides the gas to the moving gas nozzle 60 . In the gas piping 62, a gas valve 63 for opening and closing the flow path in the gas piping 62 is interposed.

自移動氣體噴嘴60噴出之氣體不限於氮氣。自移動氣體噴嘴60噴出之氣體亦可為空氣。又，自移動氣體噴嘴60噴出之氣體亦可為氮氣以外之惰性氣體。自移動氣體噴嘴60噴出之氣體之流量例如為5 L/min以上且30 L/min以下。The gas ejected from the moving gas nozzle 60 is not limited to nitrogen gas. The gas ejected from the moving gas nozzle 60 can also be air. In addition, the gas ejected from the moving gas nozzle 60 may be an inert gas other than nitrogen. The flow rate of the gas ejected from the moving gas nozzle 60 is, for example, 5 L/min or more and 30 L/min or less.

感測器13為測定基板W相對於旋轉軸線A1之偏心量E之偏心量測定單元之一例。基板W相對於旋轉軸線A1之偏心量E為通過基板W之上表面之中心部C1之鉛直之中心軸線A2相對於旋轉軸線A1之偏移量。The sensor 13 is an example of an eccentricity measuring unit that measures the eccentricity E of the substrate W with respect to the rotation axis A1. The eccentric amount E of the substrate W with respect to the rotation axis A1 is the offset amount of the vertical center axis A2 passing through the center portion C1 of the upper surface of the substrate W relative to the rotation axis A1.

感測器13具有發出光之發光部70、與接收自發光部70發出之光之受光部71。本實施形態中，發光部70及受光部71由噴嘴支持構件61支持。本實施形態中，發光部70及受光部71於鉛直方向上互相對向。因此，由自發光部70發出之光形成之光軸於鉛直方向延伸。The sensor 13 has a light-emitting portion 70 that emits light, and a light-receiving portion 71 that receives the light emitted from the light-emitting portion 70 . In this embodiment, the light-emitting portion 70 and the light-receiving portion 71 are supported by the nozzle support member 61 . In this embodiment, the light-emitting portion 70 and the light-receiving portion 71 face each other in the vertical direction. Therefore, the optical axis formed by the light emitted from the light-emitting portion 70 extends in the vertical direction.

發光部70具有於水平方向延伸之發光面70a，受光部71具有與發光面70a平行延伸之受光面71a。發光部70具有例如LED(Light Emitting Diode：發光二極體)等光源。本實施形態中，受光部71為線感測器，以複數個像素於水平方向排成一行之方式配置於受光面71a上。本實施形態中，發光部70之發光面70a與受光部71之受光面71a於鉛直方向上互相對向。自發光部70之發光面70a朝受光部71之受光面71a出射帶狀之光。The light-emitting portion 70 has a light-emitting surface 70a extending in the horizontal direction, and the light-receiving portion 71 has a light-receiving surface 71a extending parallel to the light-emitting surface 70a. The light emitting unit 70 has, for example, a light source such as an LED (Light Emitting Diode). In this embodiment, the light-receiving portion 71 is a line sensor, and is disposed on the light-receiving surface 71a so that a plurality of pixels are aligned in a horizontal direction. In this embodiment, the light-emitting surface 70a of the light-emitting portion 70 and the light-receiving surface 71a of the light-receiving portion 71 face each other in the vertical direction. Band-shaped light is emitted from the light-emitting surface 70a of the light-emitting portion 70 toward the light-receiving surface 71a of the light-receiving portion 71 .

由旋轉夾盤21之保持面21a保持之基板W之周緣部位於發光部70之發光面70a與受光部71之受光面71a之間之空間(檢測空間DS)時，藉由感測器13測定基板W相對於旋轉基座21之偏心量E。受光部71將顯示接受到之光L的光量(例如強度)之電性信號輸出至控制器3(參照圖1)。When the peripheral portion of the substrate W held by the holding surface 21a of the spin chuck 21 is located in the space (detection space DS) between the light-emitting surface 70a of the light-emitting portion 70 and the light-receiving surface 71a of the light-receiving portion 71, the sensor 13 measures The eccentricity E of the substrate W with respect to the spin base 21 . The light receiving unit 71 outputs an electrical signal indicating the light quantity (eg, intensity) of the received light L to the controller 3 (see FIG. 1 ).

噴嘴支持構件61包含：支持發光部70之發光部支持部61a、支持受光部71之受光部支持部61b、及連結發光部支持部61a及受光部支持部61b之連結部61c。因此，由發光部支持部61a、受光部支持部61b及連結部61c，區劃支持部內空間SS。The nozzle support member 61 includes a light-emitting portion support portion 61a that supports the light-emitting portion 70, a light-receiving portion support portion 61b that supports the light-receiving portion 71, and a connecting portion 61c that connects the light-emitting portion support portion 61a and the light-receiving portion support portion 61b. Therefore, the space SS in the support part is partitioned by the light emitting part support part 61a, the light receiving part support part 61b, and the connection part 61c.

連結部61c於發光部70及受光部71之對向方向D1上延伸。連結部61c可如圖5所示，於對向方向D1上直線延伸，亦可與圖5不同，以朝離開基板W之方向突出之方向彎曲狀地於對向方向D1延伸。The connecting portion 61c extends in the opposing direction D1 of the light-emitting portion 70 and the light-receiving portion 71 . As shown in FIG. 5 , the connecting portion 61 c may extend linearly in the opposite direction D1 , or may extend in the opposite direction D1 in a curved shape in a direction protruding away from the substrate W, different from FIG. 5 .

移動氣體噴嘴60之移動氣體噴嘴60之噴出口60a設置於連結部61c。移動氣體噴嘴60之噴出口60a之氣體之噴出方向D2為相對於對向方向D1正交之方向(水平方向)。The discharge port 60a of the moving gas nozzle 60 of the moving gas nozzle 60 is provided in the connecting portion 61c. The discharge direction D2 of the gas from the discharge port 60a of the moving gas nozzle 60 is a direction (horizontal direction) orthogonal to the opposing direction D1.

自移動氣體噴嘴60之噴出口60a噴出之氣體朝支持部內空間SS供給，充滿支持部內空間SS內。檢測空間DS為支持部內空間SS之一部分。因此，自移動氣體噴嘴60之噴出口60a噴出之氣體易遍佈檢測空間DS全體。The gas ejected from the ejection port 60a of the moving gas nozzle 60 is supplied to the supporter inner space SS, and fills the supporter inner space SS. The detection space DS is part of the support interior space SS. Therefore, the gas ejected from the ejection port 60a of the moving gas nozzle 60 easily spreads over the entire detection space DS.

如此，移動氣體噴嘴頭12(移動氣體噴嘴60)作為朝檢測空間DS供給氣體之氣體供給單元發揮功能。再者，移動氣體噴嘴頭12(移動氣體噴嘴60)作為以檢測空間DS外之氛圍(自噴出口60a噴出之氣體)置換存在於檢測空間DS內之氛圍之氛圍置換單元發揮功能。In this way, the moving gas nozzle head 12 (moving gas nozzle 60 ) functions as a gas supply means for supplying gas to the detection space DS. Furthermore, the moving gas nozzle head 12 (moving gas nozzle 60 ) functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere outside the detection space DS (gas ejected from the discharge port 60a).

移動氣體噴嘴頭12藉由氣體噴嘴移動單元65於水平方向移動。移動氣體噴嘴頭12構成為與發光部70及受光部71一起，於檢測位置(圖5所示之位置)與退避位置(圖1所示之位置)之間，於水平方向移動。移動氣體噴嘴頭12位於檢測位置時，自水平方向與加熱器50相鄰配置。The moving gas nozzle head 12 is moved in the horizontal direction by the gas nozzle moving unit 65 . The moving gas nozzle head 12 is configured to move in the horizontal direction together with the light-emitting portion 70 and the light-receiving portion 71 between a detection position (position shown in FIG. 5 ) and a retracted position (position shown in FIG. 1 ). When the moving gas nozzle head 12 is located at the detection position, it is arranged adjacent to the heater 50 from the horizontal direction.

移動氣體噴嘴頭12位於檢測位置時，保持於旋轉基座21之基板W之周緣部位於檢測空間DS。移動氣體噴嘴頭12位於檢測位置時，藉由自噴出口60a噴出氣體，可對檢測空間DS供給氣體。When the moving gas nozzle head 12 is located at the detection position, the peripheral portion of the substrate W held by the spin base 21 is located in the detection space DS. When the moving gas nozzle head 12 is located at the detection position, the gas can be supplied to the detection space DS by ejecting the gas from the ejection port 60a.

又，移動氣體噴嘴頭12位於檢測位置時，噴出口60a自水平方向與基板W之下表面之周緣部與加熱器50之對向面50a之間之環狀空間SP1對向。因此，移動氣體噴嘴頭12可將氣體有效送入至環狀空間SP1內。基板W之下表面之周緣部為包含基板W之外周端(前端)與基板W之下表面中外周端附近部分之區域。When the moving gas nozzle head 12 is located at the detection position, the ejection port 60a faces the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50 from the horizontal direction. Therefore, moving the gas nozzle head 12 can efficiently send the gas into the annular space SP1. The peripheral portion of the lower surface of the substrate W is an area including the outer peripheral end (front end) of the substrate W and the portion near the outer peripheral end in the lower surface of the substrate W.

移動氣體噴嘴頭12位於檢測位置時，發光部70及受光部71之一者位於較保持於旋轉基座21之基板W(保持位置)上方，發光部70及受光部71之另一者位於較保持位置下方。本實施形態中，發光部70位於較保持位置上方，受光部71位於較保持位置下方。When the moving gas nozzle head 12 is located at the detection position, one of the light-emitting portion 70 and the light-receiving portion 71 is positioned higher than the substrate W (holding position) held on the rotating base 21, and the other of the light-emitting portion 70 and the light-receiving portion 71 is positioned higher. Keep the position down. In this embodiment, the light-emitting portion 70 is positioned above the holding position, and the light-receiving portion 71 is positioned below the holding position.

移動氣體噴嘴頭12位於退避位置時，保持於旋轉基座21之基板W之周緣部位於檢測空間DS外。When the moving gas nozzle head 12 is located at the retracted position, the peripheral edge portion of the substrate W held by the spin base 21 is located outside the detection space DS.

移動氣體噴嘴頭12位於檢測位置時，自發光部70發出之光於檢測空間DS內行進，其一部分由基板W之周緣區域遮擋，其他部分入射至受光面71a上之一部分像素。控制器3基於受光部71之複數個像素中接受來自發光部70之光之像素的位置，檢測檢測空間DS內之基板W之外周端之位置。When the moving gas nozzle head 12 is at the detection position, the light emitted from the light-emitting part 70 travels in the detection space DS, a part of which is blocked by the peripheral region of the substrate W, and the other part is incident on a part of the pixels on the light-receiving surface 71a. The controller 3 detects the position of the outer peripheral end of the substrate W in the detection space DS based on the position of the pixel receiving the light from the light-emitting portion 70 among the plurality of pixels of the light-receiving portion 71 .

移動氣體噴嘴60之一部分插通與噴嘴支持構件61連結並水平延伸之氣體噴嘴臂66。A part of the moving gas nozzle 60 penetrates the gas nozzle arm 66 which is connected to the nozzle support member 61 and extends horizontally.

氣體噴嘴移動單元65包含使氣體噴嘴臂66於水平方向移動之氣體噴嘴臂水平移動機構(未圖示)。氣體噴嘴臂水平移動機構亦可包含例如缸體機構、滾珠螺桿機構、線性馬達機構、及齒條齒輪機構之至少一者。氣體噴嘴臂水平移動機構包含例如：馬達等水平移動用致動器(未圖示)；及水平運動傳遞機構(未圖示)，其與氣體噴嘴臂66連結，將自該致動器賦予之驅動力傳遞至氣體噴嘴臂66，使氣體噴嘴臂66水平移動。水平運動傳遞機構包含例如滾珠螺桿機構或齒條齒輪機構。The gas nozzle moving unit 65 includes a gas nozzle arm horizontal movement mechanism (not shown) for moving the gas nozzle arm 66 in the horizontal direction. The gas nozzle arm horizontal movement mechanism may also include, for example, at least one of a cylinder mechanism, a ball screw mechanism, a linear motor mechanism, and a rack and pinion mechanism. The gas nozzle arm horizontal movement mechanism includes, for example, a horizontal movement actuator (not shown) such as a motor; The driving force is transmitted to the gas nozzle arm 66 to move the gas nozzle arm 66 horizontally. The horizontal motion transmission mechanism includes, for example, a ball screw mechanism or a rack and pinion mechanism.

圖6係定心單元14周邊之剖視圖。定心單元14構成為使旋轉基座21之保持面21a上之基板W相對於旋轉基座21移動，使基板W之中心軸線A2靠近旋轉軸線A1。定心單元14配置於較加熱單元11更靠旋轉軸線A1側。FIG. 6 is a cross-sectional view of the periphery of the centering unit 14 . The centering unit 14 is configured to move the substrate W on the holding surface 21a of the spin base 21 relative to the spin base 21 so that the center axis A2 of the substrate W is brought close to the rotation axis A1. The centering unit 14 is arranged on the rotation axis A1 side of the heating unit 11 .

定心單元14包含：複數個提升銷80(亦參照圖3)，其等作為以抬起保持於保持面21a之基板W，或將該抬起之基板W載置於保持面21a之方式構成之複數個(本實施形態中為3個)升降機；及銷水平移動機構90，其藉由使複數個提升銷80水平移動，而使基板W之中心部C1靠近旋轉軸線A1。銷水平移動機構90為升降機水平移動機構之一例。The centering unit 14 includes a plurality of lift pins 80 (see also FIG. 3 ), which are configured to lift the substrate W held on the holding surface 21 a or place the lifted substrate W on the holding surface 21 a a plurality of (three in this embodiment) lifters; and a pin horizontal movement mechanism 90 that moves the plurality of lift pins 80 horizontally to bring the center portion C1 of the substrate W close to the rotation axis A1. The pin horizontal movement mechanism 90 is an example of an elevator horizontal movement mechanism.

複數個提升銷80於繞旋轉軸線A1之旋轉方向等間隔配置。銷水平移動機構90使複數個提升銷80相對於旋轉基座21一體向水平方向移動。複數個提升銷80藉由圓環狀之連結構件81連結。The plurality of lift pins 80 are arranged at equal intervals in the rotation direction around the rotation axis A1. The pin horizontal movement mechanism 90 integrally moves the plurality of lift pins 80 in the horizontal direction with respect to the rotating base 21 . The plurality of lift pins 80 are connected by an annular connecting member 81 .

定心單元14進而包含使複數個提升銷80一體於鉛直方向移動之銷鉛直移動機構85。銷鉛直移動機構85為升降機鉛直移動機構之一例。The centering unit 14 further includes a pin vertical movement mechanism 85 that integrally moves the plurality of lift pins 80 in the vertical direction. The pin vertical movement mechanism 85 is an example of an elevator vertical movement mechanism.

提升銷80具有作為自較保持於保持面21a之基板W下方，與基板W對向之對向部之前端部80a。複數個提升銷80藉由銷鉛直移動機構85，於第1位置(圖6中二點鏈線所示之位置)與第2位置(圖6中實線所示之位置)之間移動。提升銷80位於第1位置時，提升銷80之前端部80a位於較保持於保持面21a之基板W上方。提升銷80位於第2位置時，提升銷80之前端部80a位於較保持於保持面21a之基板W下方。The lift pin 80 has a front end portion 80a of an opposing portion facing the substrate W from below the substrate W held on the holding surface 21a. The plurality of lift pins 80 are moved between a first position (the position shown by the two-dot chain line in FIG. 6 ) and the second position (the position shown by the solid line in FIG. 6 ) by the pin vertical movement mechanism 85 . When the lift pin 80 is located at the first position, the front end portion 80a of the lift pin 80 is positioned above the substrate W held on the holding surface 21a. When the lift pin 80 is located at the second position, the front end portion 80a of the lift pin 80 is positioned below the substrate W held on the holding surface 21a.

銷鉛直移動機構85之構成雖未特別限制，但銷鉛直移動機構85包含例如線性馬達機構、滾珠螺桿機構或缸體機構。Although the configuration of the pin vertical movement mechanism 85 is not particularly limited, the pin vertical movement mechanism 85 includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.

銷鉛直移動機構85包含固定體86、可動體87及驅動機構88。可動體87設置成可相對於固定體86沿鉛直方向移動。驅動機構88使用以使可動體87相對於固定體86於鉛直方向移動之驅動力作用於可動體87。The pin vertical movement mechanism 85 includes a fixed body 86 , a movable body 87 , and a drive mechanism 88 . The movable body 87 is provided so as to be movable in the vertical direction with respect to the fixed body 86 . The driving mechanism 88 is used to act on the movable body 87 with a driving force that moves the movable body 87 in the vertical direction with respect to the fixed body 86 .

驅動機構88包含例如馬達。例如，可動體87適當經由連桿構件等連結於馬達之轉子，該連桿構件藉由馬達而移位，藉此，使可動體87相對於固定體86於鉛直方向移動。藉由驅動機構88使可動體87相對於固定體861於鉛直方向移動，連結構件81及複數個提升銷80一體於鉛直方向移動。The drive mechanism 88 includes, for example, a motor. For example, the movable body 87 is suitably connected to the rotor of the motor via a link member or the like, and the link member is displaced by the motor, thereby moving the movable body 87 in the vertical direction with respect to the fixed body 86 . The movable body 87 is moved in the vertical direction with respect to the fixed body 861 by the drive mechanism 88 , and the connecting member 81 and the plurality of lift pins 80 are integrally moved in the vertical direction.

於基板W載置於旋轉基座21之保持面21a上之狀態下，使複數個提升銷80自第2位置移動至第1位置，藉此由複數個提升銷80抬起基板W。詳細而言，於移動至第1位置之中途，將基板W自旋轉基座21交接給複數個提升銷80，使基板W自旋轉基座21朝上方離開。When the substrate W is placed on the holding surface 21 a of the spin base 21 , the plurality of lift pins 80 are moved from the second position to the first position, thereby lifting the substrate W by the plurality of lift pins 80 . Specifically, in the middle of moving to the first position, the substrate W is transferred from the spin base 21 to the plurality of lift pins 80 , and the substrate W is separated upward from the spin base 21 .

銷水平移動機構90之構成雖未特別限制，但包含例如線性馬達機構、滾珠螺桿機構或缸體機構。The configuration of the pin horizontal movement mechanism 90 is not particularly limited, but includes, for example, a linear motor mechanism, a ball screw mechanism, or a cylinder mechanism.

銷水平移動機構90包含固定體91、可動體92及驅動機構93。可動體92以相對於固定體91沿水平方向移動之方式構成。可動體92之移動方向為與通過旋轉軸線A1之鉛直平面即基準面P1(參照圖3)平行之水平方向。可動體92之移動方向為與後述之對位步驟中基板W之移動方向即定心方向相同之方向。The pin horizontal movement mechanism 90 includes a fixed body 91 , a movable body 92 and a drive mechanism 93 . The movable body 92 is configured to move in the horizontal direction with respect to the fixed body 91 . The moving direction of the movable body 92 is a horizontal direction parallel to the reference plane P1 (refer to FIG. 3 ) that is a vertical plane passing through the rotation axis A1. The moving direction of the movable body 92 is the same as the centering direction, which is the moving direction of the substrate W in the alignment step to be described later.

驅動機構93使用以使可動體92相對於固定體91移動之驅動力作用於可動體92。例如，驅動機構93為線性馬達機構。該情形時，線性馬達機構包含安裝於定子之線圈、及安裝於動子之永磁體，藉由該等之磁性作用，使動子相對於定子於水平方向移動。固定體91連結於線性馬達之定子，可動體92連結於線性馬達之動子。驅動機構93為藉由使複數個提升銷80水平移動，而使基板W相對於旋轉基座21水平移動之定心致動器之一例。The driving mechanism 93 is used to act on the movable body 92 with a driving force for moving the movable body 92 relative to the fixed body 91 . For example, the drive mechanism 93 is a linear motor mechanism. In this case, the linear motor mechanism includes a coil mounted on the stator and a permanent magnet mounted on the mover, and the mover is moved in the horizontal direction relative to the stator by these magnetic effects. The fixed body 91 is connected to the stator of the linear motor, and the movable body 92 is connected to the mover of the linear motor. The drive mechanism 93 is an example of a centering actuator that horizontally moves the substrate W relative to the rotating base 21 by horizontally moving the plurality of lift pins 80 .

銷水平移動機構90之可動體92連結於銷鉛直移動機構85之固定體86。因此，藉由使銷水平移動機構90之可動體92於水平方向移動，銷鉛直移動機構85、連結構件81及複數個提升銷80一體於水平方向移動。The movable body 92 of the pin horizontal movement mechanism 90 is connected to the fixed body 86 of the pin vertical movement mechanism 85 . Therefore, by moving the movable body 92 of the pin horizontal movement mechanism 90 in the horizontal direction, the pin vertical movement mechanism 85 , the connecting member 81 , and the plurality of lift pins 80 are integrally moved in the horizontal direction.

藉由銷鉛直移動機構85，複數個提升銷80自第2位置移動至第1位置，藉此，複數個提升銷80將基板W自旋轉基座21抬起並支持。銷水平移動機構90可使支持基板W之複數個提升銷80水平移動，調整基板W相對於旋轉基座21之位置。詳細而言，藉由使基板W之中心軸線A2靠近旋轉軸線A1，可減少偏心量E。調整基板W相對於旋轉基座21之位置後，藉由銷鉛直移動機構85，使複數個提升銷80自第1位置移動至第2位置，藉此可將基板W保持於旋轉基座21之保持面21a。The plurality of lift pins 80 are moved from the second position to the first position by the pin vertical movement mechanism 85 , whereby the plurality of lift pins 80 lift and support the substrate W from the spin base 21 . The pin horizontal movement mechanism 90 can move the plurality of lift pins 80 supporting the substrate W horizontally, so as to adjust the position of the substrate W relative to the rotating base 21 . Specifically, the eccentric amount E can be reduced by bringing the central axis A2 of the substrate W closer to the rotation axis A1. After the position of the substrate W relative to the rotating base 21 is adjusted, the plurality of lift pins 80 are moved from the first position to the second position by the pin vertical movement mechanism 85 , so that the substrate W can be held on the rotating base 21 . The holding surface 21a.

定心單元14亦可包含檢測水平方向之銷水平移動機構90之可動體92之位置之編碼器等位置測定感測器94。The centering unit 14 may also include a position measuring sensor 94 such as an encoder that detects the position of the movable body 92 of the pin horizontal movement mechanism 90 in the horizontal direction.

定心單元14包含收容銷鉛直移動機構85及銷水平移動機構90之環狀之收容構件95。於收容構件95，形成有複數個貫通孔95a，複數個提升銷80自複數個貫通孔95a各者朝基板W之下表面突出。定心單元14包含設置於各貫通孔95a之周緣與對應之提升銷80之間之密封構件96。The centering unit 14 includes an annular accommodating member 95 that accommodates the pin vertical movement mechanism 85 and the pin horizontal movement mechanism 90 . A plurality of through holes 95 a are formed in the housing member 95 , and a plurality of lift pins 80 protrude toward the lower surface of the substrate W from each of the plurality of through holes 95 a. The centering unit 14 includes a sealing member 96 disposed between the peripheral edge of each through hole 95a and the corresponding lift pin 80 .

圖7係顯示基板處理裝置1之主要部分之電性構成之方塊圖。控制器3具備微電腦，依照特定之控制程式控制配備於基板處理裝置1之控制對象。FIG. 7 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus 1 . The controller 3 is provided with a microcomputer, and controls the control object provided in the substrate processing apparatus 1 according to a specific control program.

具體而言，控制器3亦可為包含處理器(CPU(Central Processing Unit：中央處理單元))4，與存儲有控制程式之記憶體5之電腦。控制器3構成為藉由使處理器4執行控制程式，而執行用於基板處理之各種控制。Specifically, the controller 3 may also be a computer including a processor (Central Processing Unit (CPU)) 4 and a memory 5 storing a control program. The controller 3 is configured to execute various controls for substrate processing by causing the processor 4 to execute a control program.

尤其，如下編程：控制器3控制搬送機械手IR、CR、旋轉馬達23、周緣噴嘴移動單元44、氣體噴嘴移動單元65、防護件升降單元37、通電單元57、感測器13、定心單元14、吸引閥28、複數個處理流體閥43、氣體閥63及下側處理流體閥73。In particular, it is programmed as follows: the controller 3 controls the transfer robots IR, CR, the rotary motor 23, the peripheral nozzle moving unit 44, the gas nozzle moving unit 65, the guard lifting unit 37, the energization unit 57, the sensor 13, the centering unit 14. The suction valve 28 , the plurality of processing fluid valves 43 , the gas valve 63 and the lower processing fluid valve 73 .

控制器3接收顯示由定心單元14之位置測定感測器94檢測出之可動體92之位置之電性信號。控制器3接收自受光部71輸出之電性信號。The controller 3 receives an electrical signal indicating the position of the movable body 92 detected by the position measuring sensor 94 of the centering unit 14 . The controller 3 receives the electrical signal output from the light receiving unit 71 .

圖8係用以說明藉由上述基板處理裝置執行之基板處理之一例之流程圖。圖8主要顯示藉由使控制器3執行程式而實現之處理。FIG. 8 is a flowchart for explaining an example of substrate processing performed by the above-described substrate processing apparatus. FIG. 8 mainly shows the processing realized by causing the controller 3 to execute a program.

首先，將未處理之基板W藉由搬送機械手IR、CR(參照圖1)，自載體C搬入至處理單元2，移交給旋轉夾盤6(步驟S1)。具體而言，將基板W載置於保持面21a。藉由於基板W載置於保持面21a之狀態下，打開吸引閥28，而水平保持基板W(基板保持步驟)。於將基板W載置於保持面21a前，打開流路開閉閥59，且開始通電單元57對加熱器50之通電。First, the unprocessed substrate W is carried from the carrier C to the processing unit 2 by the transfer robots IR and CR (refer to FIG. 1 ), and transferred to the spin chuck 6 (step S1 ). Specifically, the substrate W is placed on the holding surface 21a. With the substrate W placed on the holding surface 21a, the suction valve 28 is opened to hold the substrate W horizontally (substrate holding step). Before placing the substrate W on the holding surface 21a, the flow path opening and closing valve 59 is opened, and the energization of the heater 50 by the energization unit 57 is started.

雖細節於下文敘述，但將基板W載置於保持面21a後，執行進行基板W之對位之基板位置調整處理(步驟S2)。基板位置調整處理亦稱為定心處理(定心步驟)。Although the details will be described later, after the substrate W is placed on the holding surface 21a, the substrate position adjustment process for performing the alignment of the substrate W is performed (step S2). The substrate position adjustment process is also referred to as a centering process (centering step).

基板位置調整處理結束後，執行特定之液體處理。該基板處理裝置1中，例如一面以加熱單元11將基板W之周緣部加熱，一面自周緣噴嘴頭9朝基板W之上表面之周緣部供給處理液。對基板W之上表面之周緣部依序供給APM、碳酸水、HF、碳酸水。處理液之供給結束後，使基板W高速旋轉，使得基板W之上表面之周緣部乾燥。After the substrate position adjustment process is completed, a specific liquid process is performed. In this substrate processing apparatus 1 , for example, the heating unit 11 heats the peripheral portion of the substrate W, and supplies the processing liquid toward the peripheral portion of the upper surface of the substrate W from the peripheral nozzle head 9 . APM, carbonated water, HF, and carbonated water were sequentially supplied to the peripheral portion of the upper surface of the substrate W. After the supply of the processing liquid is completed, the substrate W is rotated at a high speed to dry the peripheral portion of the upper surface of the substrate W. As shown in FIG.

更具體而言，藉由使周緣噴嘴頭9移動至處理位置，打開對應之處理流體閥43，而自第1周緣藥液噴嘴40A對基板W之上表面之周緣部供給APM等藥液(第1藥液處理：步驟S3)。More specifically, by moving the peripheral nozzle head 9 to the processing position, the corresponding processing fluid valve 43 is opened, and the chemical liquid such as APM is supplied from the first peripheral chemical liquid nozzle 40A to the peripheral portion of the upper surface of the substrate W (the first chemical liquid). 1. Liquid treatment: step S3).

其後，關閉與第1周緣藥液噴嘴40A對應之處理流體閥43，取而代之，打開與周緣清洗液噴嘴40C對應之處理流體閥43。藉此，自周緣清洗液噴嘴40C對基板W之上表面之周緣部供給碳酸水等清洗液(第1清洗處理：步驟S4)。After that, the processing fluid valve 43 corresponding to the first peripheral chemical liquid nozzle 40A is closed, and the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is opened instead. Thereby, the cleaning liquid, such as carbonated water, is supplied to the peripheral edge part of the upper surface of the board|substrate W from the peripheral cleaning liquid nozzle 40C (1st cleaning process: step S4).

再者，其後，關閉與周緣清洗液噴嘴40C對應之處理流體閥43，打開與第2周緣藥液噴嘴40B對應之處理流體閥43。藉此，自第2周緣藥液噴嘴40B對基板W之上表面之周緣部供給氫氟酸等藥液(第2藥液處理：步驟S5)。其後，關閉與第2周緣藥液噴嘴40B對應之處理流體閥43，打開與周緣清洗液噴嘴40C對應之處理流體閥43。藉此，自周緣清洗液噴嘴40C對基板W之上表面之周緣部供給碳酸水等清洗液(第2清洗處理：步驟S6)。Then, the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is closed, and the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is opened. Thereby, the chemical liquid such as hydrofluoric acid is supplied from the second peripheral chemical liquid nozzle 40B to the peripheral edge portion of the upper surface of the substrate W (second chemical liquid treatment: step S5 ). After that, the processing fluid valve 43 corresponding to the second peripheral chemical liquid nozzle 40B is closed, and the processing fluid valve 43 corresponding to the peripheral cleaning liquid nozzle 40C is opened. Thereby, the cleaning liquid, such as carbonated water, is supplied to the peripheral edge part of the upper surface of the board|substrate W from the peripheral cleaning liquid nozzle 40C (2nd cleaning process: step S6).

第2清洗處理後，關閉處理流體閥43，旋轉馬達23使基板W之旋轉加速，使基板W以高旋轉速度(例如數千rpm)旋轉(旋轉乾燥：步驟S7)。藉此，將液體自基板W去除，將基板W乾燥。自基板W之高速旋轉開始起經過特定時間後，旋轉馬達23停止旋轉。藉此，停止基板W之旋轉。After the second cleaning process, the process fluid valve 43 is closed, and the rotation motor 23 accelerates the rotation of the substrate W to rotate the substrate W at a high rotation speed (eg, several thousand rpm) (spin drying: step S7 ). Thereby, the liquid is removed from the substrate W, and the substrate W is dried. After a certain time has elapsed since the high-speed rotation of the substrate W was started, the rotation of the rotation motor 23 is stopped. Thereby, the rotation of the substrate W is stopped.

對基板W之液體處理結束後，搬送機械手CR進入處理單元2，自旋轉夾盤6取出已處理之基板W，將其搬出至處理單元2外(步驟S8)。將該基板W自搬送機械手CR移交給搬送機械手IR，藉由搬送機械手IR收納於載體C內。After the liquid processing on the substrate W is completed, the transfer robot CR enters the processing unit 2, takes out the processed substrate W from the spin chuck 6, and carries it out of the processing unit 2 (step S8). The substrate W is handed over from the transfer robot CR to the transfer robot IR, and stored in the carrier C by the transfer robot IR.

液體處理中，由加熱器50供給輻射熱與加熱氣體，藉此將基板W加熱。因此，APM或HF等藥液對基板W之上表面周緣部之處理速率提高。利用APM或HF等藥液，蝕刻存在於基板W之上表面周緣部之TiN或SiO 2。藉由將加熱氣體供給至加熱器50與基板W之下表面之間之環狀空間SP1，可防止著液於基板之上表面之周緣部之處理液迴繞至基板之下表面。 In the liquid processing, the substrate W is heated by supplying radiant heat and heating gas from the heater 50 . Therefore, the processing rate of the peripheral portion of the upper surface of the substrate W with chemical solutions such as APM or HF is improved. TiN or SiO 2 existing on the peripheral edge portion of the upper surface of the substrate W is etched with a chemical solution such as APM or HF. By supplying the heating gas to the annular space SP1 between the heater 50 and the lower surface of the substrate W, it is possible to prevent the processing liquid that has reached the peripheral portion of the upper surface of the substrate from wrapping around to the lower surface of the substrate.

圖9係用以針對基板處理中之基板位置調整處理(步驟S2)進行說明之流程圖。圖10A～圖10C係用以說明進行基板位置調整處理之一例時之基板之狀況的模式圖。FIG. 9 is a flowchart for explaining the substrate position adjustment process (step S2 ) in the substrate processing. 10A to 10C are schematic views for explaining the state of the substrate when an example of the substrate position adjustment process is performed.

基板位置調整處理(步驟S2)中，氣體噴嘴移動單元65使移動氣體噴嘴頭12移動至檢測位置(步驟S10)。In the substrate position adjustment process (step S2 ), the gas nozzle moving unit 65 moves the moving gas nozzle head 12 to the detection position (step S10 ).

打開氣體閥63，開始自移動氣體噴嘴60向檢測空間DS供給氣體(氣體供給步驟)。藉此，如圖5所示，開始利用自移動氣體噴嘴60供給之氣體，置換存在於檢測空間DS之氛圍(步驟S11)。即，於基板W之周緣部位於檢測空間DS之狀態下，開始由移動氣體噴嘴60噴出之氣體，置換存在於檢測空間DS之氛圍之氛圍置換步驟。The gas valve 63 is opened, and gas supply from the moving gas nozzle 60 to the detection space DS is started (gas supply step). Thereby, as shown in FIG. 5, the gas supplied from the moving gas nozzle 60 starts to replace the atmosphere existing in the detection space DS (step S11). That is, in a state where the peripheral edge of the substrate W is located in the detection space DS, an atmosphere replacement step of replacing the atmosphere existing in the detection space DS by the gas ejected from the moving gas nozzle 60 is started.

開始氛圍置換步驟之後，藉由感測器13測定基板W之偏心量E(步驟S12)。即，於執行氛圍置換步驟之過程中，執行一面使基板W旋轉，一面由感測器13測定偏心量E之偏心量測定步驟。After the atmosphere replacement step is started, the eccentric amount E of the substrate W is measured by the sensor 13 (step S12). That is, during the execution of the atmosphere replacement step, the eccentric amount measuring step of measuring the eccentric amount E by the sensor 13 while rotating the substrate W is executed.

由感測器13測定出偏心量E後，控制器3判定偏心量E是否在特定閾值以內(步驟S13：偏心量判定步驟)。特定閾值例如為0.08 mm。偏心量E不在閾值以內之情形時(步驟S13：否(NO))，於進行基板W之對位之前，進行確認基板W是否位於配置基板W之基準位置之位置確認步驟(步驟S14)。After the eccentricity amount E is measured by the sensor 13, the controller 3 determines whether the eccentricity amount E is within a predetermined threshold value (step S13: eccentricity amount determination step). A specific threshold is, for example, 0.08 mm. When the eccentric amount E is not within the threshold value (step S13: NO (NO)), before performing the alignment of the substrate W, a position confirmation step of confirming whether the substrate W is located at the reference position where the substrate W is arranged is performed (step S14).

位置確認步驟中，具體而言，控制器3基於受光部71之檢測值，確認基板W是否位於基準位置。基準位置為基板W之中心軸線A2與基準面P1重合，且基板W之中心軸線A2與旋轉軸線A1於提升銷80之移動方向(定心方向)排列之旋轉相位。圖10A係顯示基板W之中心軸線A2不與基準面P1重合之狀態。In the position confirmation step, specifically, the controller 3 confirms whether or not the substrate W is located at the reference position based on the detection value of the light receiving unit 71 . The reference position is the rotation phase in which the central axis A2 of the substrate W and the reference plane P1 coincide, and the central axis A2 of the substrate W and the rotation axis A1 are aligned in the moving direction (centering direction) of the lift pin 80 . FIG. 10A shows a state in which the central axis A2 of the substrate W does not coincide with the reference plane P1.

基板W位於基準位置之情形時(步驟S14：是(YES)，旋轉馬達23不使基板W及旋轉基座21旋轉，而使之於該位置靜止。基板W不位於基準位置之情形時(步驟S14：否)，旋轉馬達23使基板W及旋轉基座21旋轉至基準位置，於基準位置靜止(步驟S15)。例如，基板W處於圖10B所示之狀態之情形時，旋轉馬達23使基板W及旋轉基座21順時針旋轉90°。藉此，如圖10B所示，基板W之中心部C1與基準面P1重合，基板W配置於基準位置。When the substrate W is located at the reference position (step S14: YES), the rotary motor 23 does not rotate the substrate W and the rotating base 21, but makes them stationary at the position. When the substrate W is not located at the reference position (step S14) S14: No), the rotary motor 23 rotates the substrate W and the rotary base 21 to the reference position, and is stationary at the reference position (step S15). For example, when the substrate W is in the state shown in FIG. 10B, the rotary motor 23 rotates the substrate W and the rotating base 21 are rotated clockwise by 90°. As a result, as shown in FIG.

於基板W配置於基準位置之狀態下，藉由定心單元14進行基板W之對位(對位步驟：步驟S16)。詳細而言，定心單元14根據由感測器13測定出之偏心量E，以基板W之中心軸線A2靠近旋轉軸線A1之方式，使基板W相對於旋轉基座21於定心方向水平移動。When the substrate W is arranged at the reference position, the alignment of the substrate W is performed by the centering unit 14 (alignment step: step S16 ). Specifically, the centering unit 14 horizontally moves the substrate W in the centering direction relative to the rotating base 21 so that the central axis A2 of the substrate W is close to the rotation axis A1 according to the eccentricity E measured by the sensor 13 . .

具體而言，使複數個提升銷80移動至第1位置(參照圖6中二點鏈線所示之提升銷80之位置)，藉由複數個提升銷80抬起旋轉基座21上之基板W。其後，如圖10B所示，藉由使複數個提升銷80於定心方向移動，減少基板W之偏心量E，其後，使複數個提升銷80下降至第2位置(參照圖6中實線所示之提升銷80之位置)。藉由複數個提升銷80之下降，將基板W載置於旋轉基座21之保持面21a。Specifically, the plurality of lift pins 80 are moved to the first position (refer to the position of the lift pins 80 shown by the two-dot chain line in FIG. 6 ), and the plurality of lift pins 80 are used to lift the substrate on the rotating base 21 W. Then, as shown in FIG. 10B , by moving the plurality of lift pins 80 in the centering direction, the eccentric amount E of the substrate W is reduced, and thereafter, the plurality of lift pins 80 are lowered to the second position (see FIG. 6 ). position of lift pin 80 shown in solid line). The substrate W is placed on the holding surface 21 a of the spin base 21 by the descending of the plurality of lift pins 80 .

藉由對位步驟，基板W之中心軸線A2充分靠近旋轉基座21之旋轉軸線A1，藉此如圖10C所示，消除基板W之偏心。消除基板W之偏心並非意指旋轉軸線A1與基板W之中心軸線A2完全一致，而係意指偏心量E為特定之閾值(例如0.08 mm)以下。Through the alignment step, the central axis A2 of the substrate W is sufficiently close to the rotation axis A1 of the rotating base 21, thereby eliminating the eccentricity of the substrate W as shown in FIG. 10C. Eliminating the eccentricity of the substrate W does not mean that the rotation axis A1 and the central axis A2 of the substrate W are completely consistent, but means that the eccentricity E is below a certain threshold (eg, 0.08 mm).

其後，藉由打開吸引閥28，將基板W吸附於旋轉基座21(吸附步驟：步驟S17)。其後，藉由關閉氣體閥63，檢測空間DS內之氛圍置換結束(步驟S18)。即，氛圍置換步驟結束。又，氣體噴嘴移動單元65使移動氣體噴嘴頭12朝退避位置移動(步驟S19)。根據以上，基板位置調整處理(步驟S2)結束。Then, by opening the suction valve 28, the substrate W is sucked to the spin base 21 (suction step: step S17). Then, by closing the gas valve 63, the atmosphere replacement in the detection space DS is completed (step S18). That is, the atmosphere replacement step ends. Moreover, the gas nozzle moving means 65 moves the moving gas nozzle head 12 to the retracted position (step S19). From the above, the substrate position adjustment process (step S2 ) ends.

步驟S13中，偏心量E為閾值以內之情形時(步驟S13：NO(否))，不執行對位步驟，而執行步驟S17以後的步驟。In step S13, when the eccentricity amount E is within the threshold value (step S13: NO (NO)), the alignment step is not performed, but the steps after step S17 are performed.

其後，將未處理之基板W搬入至處理單元2，對該基板W進行基板位置調整及基板處理。於加熱器50之加熱效率之觀點，於基板處理結束後，至開始對下個基板W之基板位置調整之期間，亦繼續通電單元57對加熱單元11之加熱器50之通電及氣體供給。After that, the unprocessed substrate W is carried into the processing unit 2 , and the substrate W is subjected to substrate position adjustment and substrate processing. From the viewpoint of the heating efficiency of the heater 50, the energization and gas supply of the heater 50 of the heating unit 11 by the energization unit 57 are continued until the substrate position adjustment for the next substrate W is started after the substrate processing is completed.

接著，針對置換檢測空間DS內之氛圍之效果進行說明。Next, the effect of replacing the atmosphere in the detection space DS will be described.

基板位置調整處理中，藉由將基板W載置於保持面21a，由加熱單元11將基板W之周緣部加熱。因此，於基板W之周緣部附近之空間內，產生氛圍波動。詳細而言，與基板之周緣部相接之溫度相對較高之氛圍與其周圍之氛圍混合而攪亂氛圍。因氛圍被攪亂，基板W之周緣部附近之空間之折射率產生不均。In the substrate position adjustment process, the peripheral portion of the substrate W is heated by the heating unit 11 by placing the substrate W on the holding surface 21a. Therefore, in the space in the vicinity of the peripheral portion of the substrate W, atmospheric fluctuations are generated. Specifically, the atmosphere with a relatively high temperature in contact with the peripheral portion of the substrate is mixed with the surrounding atmosphere to disturb the atmosphere. When the atmosphere is disturbed, the refractive index of the space in the vicinity of the peripheral portion of the substrate W is uneven.

若將移動氣體噴嘴頭12配置於檢測位置，則感測器13之發光部70及受光部71之間之檢測空間DS位於基板W之周緣部附近。因此，檢測空間DS中亦發生氛圍波動。If the moving gas nozzle head 12 is arranged at the detection position, the detection space DS between the light-emitting portion 70 and the light-receiving portion 71 of the sensor 13 is located near the peripheral portion of the substrate W. Therefore, atmospheric fluctuation also occurs in the detection space DS.

圖11係用以說明進行檢測空間DS內之氛圍置換前後之偏心量E之測定值差異之圖表。圖11中，橫軸表示基板W之旋轉相位，縱軸表示基板W外周端之移位量。FIG. 11 is a graph for explaining the difference in the measured value of the eccentricity E before and after the replacement of the atmosphere in the detection space DS. In FIG. 11 , the horizontal axis represents the rotational phase of the substrate W, and the vertical axis represents the displacement amount of the outer peripheral end of the substrate W. As shown in FIG.

旋轉相位意指將基板W之旋轉方向上之基準位置之角度設為0°時，相對於基準位置之旋轉量。基板W之外周端之移位量係與發光部70及受光部71之對向方向正交之方向上之基板W之移位量，係位於特定基準位置之基板W之外周端與各旋轉相位處之基板W之外周端之距離。基準位置係基板W之中心軸線A2與旋轉基座21之旋轉軸線A1一致之位置。The rotation phase means the amount of rotation relative to the reference position when the angle of the reference position in the rotation direction of the substrate W is set to 0°. The displacement amount of the outer peripheral end of the substrate W is the displacement amount of the substrate W in the direction orthogonal to the opposing direction of the light-emitting portion 70 and the light-receiving portion 71, and the outer peripheral end of the substrate W located at a specific reference position and each rotational phase The distance from the outer peripheral end of the substrate W. The reference position is a position at which the central axis A2 of the substrate W and the rotation axis A1 of the rotating base 21 coincide.

基板W相對於旋轉軸線A1之偏心量E為基板W之外周端之移位量之最大值之絕對值、與基板W之外周端之移位量之最小值之絕對值之和(合計移位量DA)的一半(E=DA/2)。The eccentric amount E of the substrate W relative to the rotation axis A1 is the sum of the absolute value of the maximum value of the displacement of the outer peripheral end of the substrate W and the absolute value of the minimum value of the displacement of the outer peripheral end of the substrate W (total displacement half of the amount DA) (E=DA/2).

假設與該基板處理不同，不進行檢測空間DS內之氛圍置換之情形時，於檢測空間DS內產生氛圍波動之狀態下，測定偏心量E。因此，如圖11中虛線所示，基板W之外周端之移位量產生雜訊。因此，偏心量E之測定精度不充分。Assuming that unlike the substrate processing, when the atmosphere in the detection space DS is not replaced, the eccentricity amount E is measured in a state where the atmosphere fluctuates in the detection space DS. Therefore, as shown by the dotted line in FIG. 11 , the displacement amount of the outer peripheral end of the substrate W generates noise. Therefore, the measurement accuracy of the eccentricity E is insufficient.

另一方面，該基板處理中，由於由自移動氣體噴嘴60供給之氣體來置換存在於檢測空間DS之氛圍，故消除檢測空間DS之氛圍波動。因此，如圖11中實線所示，基板W之外周端之移位量之雜訊減少。因此，可精度良好地測定基板W之偏心量E。On the other hand, in this substrate processing, since the atmosphere existing in the detection space DS is replaced by the gas supplied from the moving gas nozzle 60, the fluctuation of the atmosphere in the detection space DS is eliminated. Therefore, as shown by the solid line in FIG. 11 , the noise of the displacement amount of the outer peripheral end of the substrate W is reduced. Therefore, the eccentric amount E of the substrate W can be measured with high accuracy.

根據第1實施形態，由自移動氣體噴嘴60噴出之氣體(檢測空間DS外之氛圍)，置換檢測空間DS內之氛圍。因此，基板W之周緣部位於檢測空間DS時，可消除檢測空間DS之氛圍波動。其結果，可提高感測器13之檢測精度，故可良好地減少基板W之偏心量E。According to the first embodiment, the gas (the atmosphere outside the detection space DS) ejected from the moving gas nozzle 60 replaces the atmosphere in the detection space DS. Therefore, when the peripheral portion of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13 can be improved, so that the eccentric amount E of the substrate W can be reduced favorably.

移動氣體噴嘴60朝保持於保持面21a之基板W之周緣部與加熱器50之間之環狀空間SP1噴出氣體。存在於環狀空間SP1之氛圍易藉由加熱器50加熱，易產生與環狀空間SP1外之氛圍之溫度差。因此，存在於環狀空間SP1之氛圍尤其易產生波動。因此，若將移動氣體噴嘴60以朝環狀空間SP1噴出氣體之方式構成，則可有效置換環狀空間SP1之氛圍。因此，可消除環狀空間SP1之氛圍波動。The moving gas nozzle 60 ejects gas toward the annular space SP1 between the peripheral edge portion of the substrate W held on the holding surface 21 a and the heater 50 . The atmosphere existing in the annular space SP1 is easily heated by the heater 50, and a temperature difference with the atmosphere outside the annular space SP1 is easily generated. Therefore, the atmosphere existing in the annular space SP1 is particularly susceptible to fluctuations. Therefore, if the moving gas nozzle 60 is configured to eject gas toward the annular space SP1, the atmosphere of the annular space SP1 can be effectively replaced. Therefore, the fluctuation of the atmosphere of the annular space SP1 can be eliminated.

＜第2實施形態＞ 圖12係用以說明配備於第2實施形態之基板處理裝置1P之處理單元2之構成例之模式圖。圖13係第2實施形態之處理單元2之模式性俯視圖。圖13中，為方便起見，省略周緣噴嘴頭9及氣體噴嘴移動單元65之圖示。 <Second Embodiment> FIG. 12 is a schematic diagram for explaining a configuration example of the processing unit 2 provided in the substrate processing apparatus 1P of the second embodiment. FIG. 13 is a schematic plan view of the processing unit 2 according to the second embodiment. In FIG. 13 , for the sake of convenience, illustration of the peripheral nozzle head 9 and the gas nozzle moving unit 65 is omitted.

圖12及圖13以及後述之圖14～圖18B中，針對與上述圖1～圖11所示之構成同等之構成，標註與圖1等相同之參照符號，省略其說明。In FIGS. 12 and 13 , and FIGS. 14 to 18B described later, the same reference numerals as those in FIG. 1 are assigned to the same structures as those shown in the above-mentioned FIGS. 1 to 11 , and descriptions thereof are omitted.

基板處理裝置1P與第1實施形態之基板處理裝置1之主要不同點在於：取代移動氣體噴嘴頭12，設置有複數個固定氣體噴嘴15及安裝板16、感測器13P之位置固定、以及將定心單元14P安裝於防護件30。The substrate processing apparatus 1P is mainly different from the substrate processing apparatus 1 of the first embodiment in that, instead of the moving gas nozzle head 12, a plurality of fixed gas nozzles 15 and a mounting plate 16 are provided, the position of the sensor 13P is fixed, and the The centering unit 14P is attached to the guard 30 .

感測器13P之發光部70及受光部71之一者配置於較保持位置上方，發光部70及受光部71之另一者配置於較保持位置下方。第2實施形態中，發光部70及受光部71之對向方向D1與鉛直方向一致。圖13所示之例中，發光部70配置於較保持位置下方，受光部71配置於較保持位置上方。One of the light-emitting portion 70 and the light-receiving portion 71 of the sensor 13P is disposed above the holding position, and the other of the light-emitting portion 70 and the light-receiving portion 71 is disposed below the holding position. In the second embodiment, the opposing direction D1 of the light-emitting portion 70 and the light-receiving portion 71 coincides with the vertical direction. In the example shown in FIG. 13 , the light-emitting portion 70 is arranged below the holding position, and the light-receiving portion 71 is arranged above the holding position.

發光部70配置於旋轉夾盤6之馬達外殼24中。發光部70配置於在上下方向貫通馬達外殼24之透過孔之下方。馬達外殼24之透過孔由透過發光部70之光L之透過構件覆蓋。發光部70發出之光L通過透明構件放出至馬達外殼24之外。The light-emitting portion 70 is disposed in the motor housing 24 of the rotary chuck 6 . The light-emitting portion 70 is disposed below the transmission hole that penetrates the motor housing 24 in the vertical direction. The transmission hole of the motor case 24 is covered with a transmission member for transmitting the light L of the light-emitting portion 70 . The light L emitted by the light-emitting portion 70 is emitted to the outside of the motor housing 24 through the transparent member.

受光部71配置於感測器外殼100中，且該感測器外殼100配置於腔室8內。受光部71配置於在上下方向上貫通感測器外殼100之透過孔之上方。感測器外殼100之透過孔由透過發光部70之光L之透明構件封塞。自發光部70發出之光L通過透明構件進入感測器外殼100中，照射至受光部71。本實施形態中，發光部70之發光面70a與受光部71之受光面71a於鉛直方向上互相對向。The light receiving portion 71 is arranged in the sensor case 100 , and the sensor case 100 is arranged in the chamber 8 . The light receiving portion 71 is disposed above the transmission hole penetrating the sensor case 100 in the up-down direction. The transmission hole of the sensor housing 100 is sealed by a transparent member that transmits the light L of the light-emitting portion 70 . The light L emitted from the light-emitting portion 70 enters the sensor housing 100 through the transparent member, and is irradiated to the light-receiving portion 71 . In this embodiment, the light-emitting surface 70a of the light-emitting portion 70 and the light-receiving surface 71a of the light-receiving portion 71 face each other in the vertical direction.

如此，發光部70及受光部71固定於構件(馬達外殼24及感測器外殼100)，且該構件於腔室8內之位置固定。因此，藉由將基板W保持於保持面21a，而將基板W之周緣部配置於檢測空間DS。In this way, the light-emitting portion 70 and the light-receiving portion 71 are fixed to the members (the motor casing 24 and the sensor casing 100 ), and the positions of the members in the chamber 8 are fixed. Therefore, by holding the board|substrate W on the holding surface 21a, the peripheral part of the board|substrate W is arrange|positioned in the detection space DS.

旋轉基座21上不存在基板W之情形時，自發光部70發出之光L於鉛直方向通過形成於防護件30之上端部之內周面與加熱器50之外周面之間之環狀空間SP2，未被防護件30及加熱器50遮擋而到達受光部71。於旋轉基座21上存在基板W之情形時，自發光部70發出之光L之一部分被基板W之周緣部遮擋。因此，控制器3基於受光部71之複數個像素中接受來自發光部70之光L之像素之位置，檢測檢測空間DS內之基板W之外周端之位置。When there is no substrate W on the rotating base 21, the light L emitted from the light-emitting portion 70 passes through the annular space formed between the inner peripheral surface of the upper end of the guard 30 and the outer peripheral surface of the heater 50 in the vertical direction. SP2 reaches the light receiving portion 71 without being blocked by the guard 30 and the heater 50 . When the substrate W exists on the spin base 21 , a portion of the light L emitted from the light-emitting portion 70 is blocked by the peripheral portion of the substrate W. As shown in FIG. Therefore, the controller 3 detects the position of the outer peripheral end of the substrate W in the detection space DS based on the position of the pixel receiving the light L from the light-emitting portion 70 among the plurality of pixels of the light-receiving portion 71 .

安裝板16安裝固定於腔室8之側壁8A。The mounting plate 16 is mounted and fixed on the side wall 8A of the chamber 8 .

複數個固定氣體噴嘴15共通安裝於單一之安裝板16。複數個固定氣體噴嘴15於較基板W之保持位置上方，沿發光部70及受光部71之對向方向D1排列。A plurality of fixed gas nozzles 15 are commonly mounted on a single mounting plate 16 . The plurality of fixed gas nozzles 15 are arranged above the holding position of the substrate W along the opposing direction D1 of the light-emitting portion 70 and the light-receiving portion 71 .

於各固定氣體噴嘴15，連接有將氮氣等氣體引導至固定氣體噴嘴15之氣體配管110。於各氣體配管110，介裝有氣體閥111，各氣體閥111開閉對應之氣體配管110內之流路。複數個固定氣體噴嘴15各自具有複數個氣體噴出口15a。複數個氣體噴出口15a沿對向方向D1排列。To each stationary gas nozzle 15, the gas piping 110 which guides gas, such as nitrogen gas, to the stationary gas nozzle 15 is connected. A gas valve 111 is interposed in each gas pipe 110 , and each gas valve 111 opens and closes a flow path in the corresponding gas pipe 110 . Each of the plurality of stationary gas nozzles 15 has a plurality of gas ejection ports 15a. The plurality of gas ejection ports 15a are arranged in the opposing direction D1.

複數個固定氣體噴嘴15包含：於檢測空間DS中對基板W之周緣部附近之部分供給氣體之第1固定氣體噴嘴15A、與於檢測空間DS中對基板W之周緣部周圍之空間局部供給氣體之第2固定氣體噴嘴15B。第2固定氣體噴嘴15B亦可設置有複數個(圖12之例中為2個)。The plurality of fixed gas nozzles 15 include a first fixed gas nozzle 15A for supplying gas to a portion of the detection space DS in the vicinity of the peripheral edge portion of the substrate W, and a partial supply of gas to the space around the peripheral edge portion of the substrate W in the detection space DS The second fixed gas nozzle 15B. The second stationary gas nozzle 15B may be provided in plural (two in the example of FIG. 12 ).

複數個固定氣體噴嘴15為對檢測空間DS供給氣體之氣體供給單元之一例。再者，固定氣體噴嘴15作為由檢測空間DS外之氛圍(自氣體噴出口15a噴出之氣體)置換存在於檢測空間DS之氛圍之氛圍置換單元發揮功能。The plurality of fixed gas nozzles 15 is an example of a gas supply unit that supplies gas to the detection space DS. Furthermore, the fixed gas nozzle 15 functions as an atmosphere replacement unit that replaces the atmosphere existing in the detection space DS with the atmosphere outside the detection space DS (gas ejected from the gas ejection port 15a).

圖14A係自水平方向觀察複數個固定氣體噴嘴15之模式圖。圖14B係複數個固定氣體噴嘴15之周邊之立體圖。圖14C係複數個固定氣體噴嘴15之俯視圖。FIG. 14A is a schematic view of the plurality of fixed gas nozzles 15 viewed from the horizontal direction. FIG. 14B is a perspective view of the periphery of the plurality of fixed gas nozzles 15 . FIG. 14C is a top view of a plurality of stationary gas nozzles 15 .

如圖14A所示，第2固定氣體噴嘴15B之氣體噴出口15a之氣體之噴出方向D3為相對於對向方向D1正交之方向。第1固定氣體噴嘴15A之氣體噴出口15a之氣體之噴出方向D4為相對於水平面HS傾斜之傾斜方向。本實施形態中，由於對向方向D1為鉛直方向，故相對於對向方向D1正交之方向為水平方向。於噴出方向D4延伸之直線SL與水平面HS所成之角度θ例如為18°。As shown in FIG. 14A , the gas jetting direction D3 of the gas jetting port 15a of the second stationary gas nozzle 15B is a direction orthogonal to the opposing direction D1. The gas discharge direction D4 of the gas discharge port 15a of the first stationary gas nozzle 15A is an inclined direction inclined with respect to the horizontal plane HS. In this embodiment, since the opposing direction D1 is a vertical direction, the direction orthogonal to the opposing direction D1 is a horizontal direction. The angle θ formed by the straight line SL extending in the ejection direction D4 and the horizontal plane HS is, for example, 18°.

由於第1固定氣體噴嘴15A配置於較基板W之保持位置上方，故噴出方向D4以隨著自第1固定氣體噴嘴15A之氣體噴出口15a朝向檢測空間DS，而朝向下方之方式相對於水平面HS傾斜。詳細而言，第1固定氣體噴嘴15A之氣體噴出口15a之氣體噴出方向D4為朝向基板W之下表面之周緣部與加熱器50之對向面50a之間之環狀空間SP1之方向。因此，第1固定氣體噴嘴15A可對環狀空間SP1有效送入氣體。Since the first stationary gas nozzle 15A is disposed above the holding position of the substrate W, the ejection direction D4 is directed downward with respect to the horizontal plane HS as the gas ejection port 15a from the first stationary gas nozzle 15A is directed toward the detection space DS tilt. Specifically, the gas ejection direction D4 of the gas ejection port 15a of the first stationary gas nozzle 15A is a direction toward the annular space SP1 between the peripheral edge of the lower surface of the substrate W and the facing surface 50a of the heater 50 . Therefore, the first stationary gas nozzle 15A can efficiently feed the gas into the annular space SP1.

如圖14B所示，各固定氣體噴嘴15包含：沿安裝板16延伸，安裝於安裝板16之安裝部115；及與安裝部115一體形成，設置有氣體噴出口15a之噴出部116。As shown in FIG. 14B , each fixed gas nozzle 15 includes: a mounting part 115 extending along the mounting plate 16 and mounted on the mounting plate 16;

於安裝部115，設置有供螺栓等緊固構件118插通之插通孔115a(亦參照圖14C)。固定氣體噴嘴15藉由緊固構件118共通安裝於安裝板16。The attachment portion 115 is provided with an insertion hole 115a (see also FIG. 14C ) through which the fastening member 118 such as a bolt is inserted. The fixed gas nozzles 15 are commonly mounted on the mounting plate 16 by the fastening members 118 .

如圖13所示，噴出部116於俯視時，自安裝部115朝相對於安裝部115延伸之方向(沿側壁8A之方向)傾斜之方向延伸。於俯視時，噴出部116及安裝部115以不正交之方式水平延伸。As shown in FIG. 13 , the ejection portion 116 extends from the mounting portion 115 in a direction inclined relative to the direction in which the mounting portion 115 extends (in the direction of the side wall 8A) in a plan view. In a plan view, the ejection portion 116 and the mounting portion 115 extend horizontally in a manner not orthogonal to each other.

氣體噴出口15a設置於噴出部116之前端部。噴出部116朝旋轉軸線A1延伸，於噴出部116與旋轉軸線A1之間配置有感測器13P(參照圖13)。因此，將自噴出部116噴出之氣體送入至感測器13P之檢測空間DS。The gas ejection port 15 a is provided at the front end portion of the ejection portion 116 . The ejection portion 116 extends toward the rotation axis A1, and the sensor 13P (see FIG. 13 ) is arranged between the ejection portion 116 and the rotation axis A1. Therefore, the gas ejected from the ejection portion 116 is sent into the detection space DS of the sensor 13P.

第1固定氣體噴嘴15A之噴出部116具有形成氣體噴出口15a且相對於對向方向D1傾斜之平坦面116a。第2固定氣體噴嘴15B之噴出部116具有形成氣體噴出口15a且沿對向方向D1之平坦面116b。The ejection portion 116 of the first stationary gas nozzle 15A has a flat surface 116a which forms the gas ejection port 15a and is inclined with respect to the opposing direction D1. The ejection portion 116 of the second stationary gas nozzle 15B has a flat surface 116b which forms the gas ejection port 15a and extends in the opposing direction D1.

如圖14C所示，於各固定氣體噴嘴15之噴出部116，連接有氣體配管110。詳細而言，於噴出部116之內部，形成有一端連接於氣體噴出口15a之內部流路117，氣體配管110內之流路連接於內部流路117之另一端。As shown in FIG. 14C , a gas pipe 110 is connected to the ejection portion 116 of each fixed gas nozzle 15 . Specifically, an internal flow path 117 having one end connected to the gas discharge port 15 a is formed inside the ejection portion 116 , and the other end of the internal flow path 117 is connected to the other end of the flow path in the gas piping 110 .

圖15係第2實施形態之定心單元14P之周邊之剖視圖。FIG. 15 is a cross-sectional view of the periphery of the centering unit 14P according to the second embodiment.

定心單元14P包含：2個升降機120，其等構成為抬起保持於保持面21a之基板W，或將該抬起之基板W載置於保持面21a；及升降機水平移動機構90P，其藉由使2個升降機120水平移動，而使基板W之中心部C1靠近旋轉軸線A1。The centering unit 14P includes: two elevators 120 configured to lift the substrate W held on the holding surface 21a, or to place the lifted substrate W on the holding surface 21a; and an elevator horizontal movement mechanism 90P, which uses By moving the two elevators 120 horizontally, the center portion C1 of the substrate W is brought close to the rotation axis A1.

各升降機120自水平方向與旋轉基座21上之基板W之周緣部對向。升降機水平移動機構90P包含：使升降機個別地於定心方向水平移動之第1升降機水平移動機構122、與使2個升降機120一體於定心方向水平移動之第2升降機水平移動機構123。Each elevator 120 faces the peripheral edge portion of the substrate W on the rotating base 21 from the horizontal direction. The elevator horizontal movement mechanism 90P includes a first elevator horizontal movement mechanism 122 that horizontally moves the elevators individually in the centering direction, and a second elevator horizontal movement mechanism 123 that horizontally moves the two elevators 120 integrally in the centering direction.

2個升降機120包含：第1升降機120A；及第2升降機120B，其與第1升降機120A為相反側，自水平方向與旋轉基座21上之基板W之周緣部對向。各升降機120具有相同構成。The two elevators 120 include: a first elevator 120A; and a second elevator 120B, which are opposite to the first elevator 120A and face the peripheral edge of the substrate W on the rotating base 21 from the horizontal direction. Each elevator 120 has the same structure.

2個升降機120分別配置於繞旋轉軸線A1之角度相差180°之2個位置。各升降機120具有於定心方向上水平對向之對向面127。將第1升降機120A之對向面127稱為第1對向面127A，將第2升降機120B之對向面127稱為第2對向面127B。第1對向面127A及第2對向面127B以隨著朝向上方而互相離開之方式，相對於水平方向傾斜。The two elevators 120 are respectively arranged at two positions whose angles around the rotation axis A1 differ by 180°. Each elevator 120 has an opposing surface 127 that is horizontally opposed to each other in the centering direction. The facing surface 127 of the first elevator 120A is referred to as a first facing surface 127A, and the facing surface 127 of the second elevator 120B is referred to as a second facing surface 127B. The first opposing surface 127A and the second opposing surface 127B are inclined with respect to the horizontal direction so as to be separated from each other as they go upward.

各升降機120藉由第1升降機水平移動機構122，於提升位置(圖15中二點鏈線所示之位置)與退避位置(圖15中實線所示之位置)之間移動。提升位置為升降機120之對向面127之前端(定心方向之端部)位於較旋轉基座21之保持面21a上之基板W之外周端部更靠旋轉軸線A1側之位置。退避位置為升降機120之對向面127離開旋轉基座21之保持面21a上之基板W之外周端之位置。Each elevator 120 is moved between a lifting position (position shown by a two-dot chain line in FIG. 15 ) and a retracted position (position shown by a solid line in FIG. 15 ) by the first elevator horizontal moving mechanism 122 . The lifting position is a position where the front end (end in the centering direction) of the facing surface 127 of the lifter 120 is located closer to the rotation axis A1 than the outer peripheral end of the substrate W on the holding surface 21 a of the rotating base 21 . The retracted position is the position at which the facing surface 127 of the elevator 120 is separated from the outer peripheral end of the substrate W on the holding surface 21 a of the rotating base 21 .

由於第1對向面127A與第2對向面127B以隨著朝向上方而互相離開之方式相對於水平方向傾斜，故於第1升降機120A及第2升降機120B朝提升位置移動之過程中，藉由第1升降機120A及第2升降機120B，抬起旋轉基座21上之基板W。Since the first opposing surface 127A and the second opposing surface 127B are inclined with respect to the horizontal direction so as to be separated from each other as they go upward, during the movement of the first elevator 120A and the second elevator 120B to the lifting position, the The substrate W on the spin base 21 is lifted up by the first lifter 120A and the second lifter 120B.

詳細而言，第1對向面127A及第2對向面127B與基板W之外周端接觸後，第1升降機120A及第2升降機120B互相進一步靠近，自旋轉基座21抬起基板W。且，第1升降機120A及第2升降機120B到達將基板W自旋轉基座21抬起至特定高度之提升位置。Specifically, after the first facing surface 127A and the second facing surface 127B contact the outer peripheral end of the substrate W, the first elevator 120A and the second elevator 120B come closer to each other, and the substrate W is lifted from the spin base 21 . And the 1st elevator 120A and the 2nd elevator 120B arrive at the raising position which raises the board|substrate W from the rotation base 21 to a predetermined height.

於使位於提升位置之第1升降機120A及第2升降機120B移動至退避位置之過程中，將基板W載置於旋轉基座21之保持面21a。In the process of moving the 1st elevator 120A and the 2nd elevator 120B located in the raising position to the retracted position, the board|substrate W is mounted on the holding surface 21a of the rotating base 21.

第1升降機水平移動機構122包含2個氣缸125。2個氣缸125分別配置於繞旋轉軸線A1之角度相差180°之2個位置。2個氣缸125配置於相同高度。2個氣缸125水平對向。旋轉基座21俯視時配置於2個氣缸125之間。The first elevator horizontal movement mechanism 122 includes two air cylinders 125. The two air cylinders 125 are respectively arranged at two positions whose angles around the rotation axis A1 differ by 180°. The two cylinders 125 are arranged at the same height. The two cylinders 125 are horizontally opposed. The rotating base 21 is arranged between the two cylinders 125 in a plan view.

氣缸125包含：缸本體125a，其具有內部空間；活塞，其將缸本體125a之內部空間分隔成於氣缸125之軸向隔開之2個室；及桿125b，其自缸本體125a之端面朝氣缸125之軸向突出，與活塞一起於氣缸125之軸向移動。升降機120安裝於桿125b。2個氣缸125為升降機致動器之一例。The cylinder 125 includes: a cylinder body 125a, which has an inner space; a piston, which divides the inner space of the cylinder body 125a into 2 chambers spaced apart in the axial direction of the cylinder 125; and a rod 125b, which faces from the end of the cylinder body 125a toward The axial direction of the cylinder 125 protrudes and moves together with the piston in the axial direction of the cylinder 125 . The elevator 120 is attached to the rod 125b. The two air cylinders 125 are examples of elevator actuators.

升降機120相對於缸本體125a，與桿125b一起於氣缸125之軸向移動。氣缸125之軸向與定心方向一致。The lifter 120 moves in the axial direction of the cylinder 125 together with the rod 125b relative to the cylinder body 125a. The axial direction of the cylinder 125 is the same as the centering direction.

第2升降機水平移動機構123包含：支持2個氣缸125之滑動支架140；使滑動支架140於定心方向移動之線性馬達141；及將滑動支架140朝定心方向引導之線性導件142。線性馬達141為藉由使2個升降機120水平移動，而使基板W相對於旋轉基座21水平移動之定心致動器之一例。The second elevator horizontal movement mechanism 123 includes: a slide bracket 140 supporting two cylinders 125; a linear motor 141 for moving the slide bracket 140 in the centering direction; and a linear guide 142 for guiding the slide bracket 140 in the centering direction. The linear motor 141 is an example of a centering actuator that horizontally moves the substrate W with respect to the rotating base 21 by horizontally moving the two elevators 120 .

滑動支架140包含：配置於2個氣缸125各者之下方之底板140a、與連結2個底板140a之1個以上關節臂140b。線性導件142設置於分別支持2個底板140a之2個主基座143與對應之底板140a間。The slide bracket 140 includes: a bottom plate 140a arranged below each of the two air cylinders 125, and one or more joint arms 140b connecting the two bottom plates 140a. The linear guides 142 are disposed between the two main bases 143 respectively supporting the two base plates 140a and the corresponding base plates 140a.

藉由使滑動支架140水平移動，支持於滑動支架140之2個氣缸125、與支持於2個氣缸125之2個升降機120以與滑動支架140相同之方向、速度及移動量水平移動。By moving the slide bracket 140 horizontally, the two cylinders 125 supported by the slide bracket 140 and the two elevators 120 supported by the two cylinders 125 move horizontally in the same direction, speed and movement amount as the slide bracket 140 .

定心單元14P包含收容2個氣缸125與底板140a之單元外殼145(參照圖13)。線性馬達141及線性導件142分別收容於2個單元外殼145。升降機120配置於單元外殼145外。The centering unit 14P includes a unit case 145 (refer to FIG. 13 ) that accommodates the two cylinders 125 and the bottom plate 140a. The linear motor 141 and the linear guide 142 are respectively accommodated in the two unit casings 145 . The elevator 120 is disposed outside the unit housing 145 .

單元外殼145自上方載置於第1防護件30A之第1延設部36A，由第1延設部36A支持。因此，定心單元14與第1防護件30A一起升降。因此，定心單元14動作時，第1防護件30A需要配置於使2個升降機120之對向面127自水平方向與基板W之周緣部對向之基板位置調整位置。基板位置調整位置為上位置與下位置之間之位置。防護件升降單元37(第1防護件升降單元)為使2個升降機120升降之升降機鉛直移動機構之一例。The unit case 145 is placed on the first extension portion 36A of the first guard 30A from above, and is supported by the first extension portion 36A. Therefore, the centering unit 14 moves up and down together with the first guard 30A. Therefore, when the centering unit 14 operates, the first guard 30A needs to be arranged at the substrate position adjustment position where the opposing surfaces 127 of the two elevators 120 face the peripheral edge of the substrate W from the horizontal direction. The substrate position adjustment position is the position between the upper position and the lower position. The guard raising/lowering unit 37 (first guard raising/lowering unit) is an example of an elevator vertical movement mechanism for raising and lowering the two elevators 120 .

旋轉基座21上之基板W於使2個升降機120以互相靠近之方式移動而移動至特定之提升位置之過程中，由2個升降機120抬起，離開旋轉基座21之保持面21a。The substrate W on the rotating base 21 is lifted by the two elevators 120 and leaves the holding surface 21 a of the rotating base 21 when the two elevators 120 are moved close to each other to move to a specific lifting position.

於2個升降機120水平支持基板W之狀態下，若線性馬達141使滑動支架140於定心方向移動，則支持於2個升降機120之基板W以與滑動支架140相同之方向、速度及移動量水平移動。藉此，基板W之中心軸線A2相對於旋轉軸線A1移動。因此，藉由調整滑動支架140之移動量，可使基板W之中心軸線A2靠近旋轉軸線A1。In the state where the two elevators 120 support the substrate W horizontally, if the linear motor 141 moves the slide bracket 140 in the centering direction, the substrate W supported by the two elevators 120 has the same direction, speed and movement amount as the slide bracket 140 Move horizontally. Thereby, the central axis A2 of the substrate W moves with respect to the rotation axis A1. Therefore, by adjusting the movement amount of the sliding bracket 140, the central axis A2 of the substrate W can be brought close to the rotation axis A1.

藉由基板處理裝置1P，可執行與第1實施形態之基板處理裝置1相同之基板處理。具體而言，可藉由基板處理裝置1P，執行圖8之基板處理。The substrate processing apparatus 1P can perform the same substrate processing as the substrate processing apparatus 1 of the first embodiment. Specifically, the substrate processing shown in FIG. 8 can be performed by the substrate processing apparatus 1P.

但，基板位置調整處理(步驟S2)之各構件之動作多少有所不同。具體而言，基板處理裝置1P中，由於設置有固定氣體噴嘴15取代移動氣體噴嘴60，故如圖16所示，省略噴嘴之移動相關之步驟。However, the operations of the components in the substrate position adjustment process (step S2) are somewhat different. Specifically, in the substrate processing apparatus 1P, since the stationary gas nozzle 15 is provided instead of the moving gas nozzle 60, as shown in FIG. 16, the steps related to the movement of the nozzle are omitted.

圖16係用以針對上述基板處理中之基板位置調整(步驟S2)進行說明之流程圖。具體而言，由於腔室8內之感測器13P之位置固定，故省略感測器之移動相關之步驟。FIG. 16 is a flowchart for explaining the substrate position adjustment (step S2 ) in the above-mentioned substrate processing. Specifically, since the position of the sensor 13P in the chamber 8 is fixed, the steps related to the movement of the sensor are omitted.

更具體而言，如下所述。將基板W載置於旋轉基座21之保持面21a後，打開複數個氣體閥111。More specifically, it is as follows. After the substrate W is placed on the holding surface 21a of the spin base 21, the plurality of gas valves 111 are opened.

藉由將基板W載置於保持面21a，基板W之周緣部位於檢測空間DS內。藉由打開複數個氣體閥111，如上述之圖14A所示，開始自複數個固定氣體噴嘴15向檢測空間DS供給氣體(氣體供給步驟)。By placing the substrate W on the holding surface 21a, the peripheral portion of the substrate W is positioned in the detection space DS. By opening the plurality of gas valves 111, as shown in FIG. 14A described above, the supply of gas to the detection space DS from the plurality of fixed gas nozzles 15 is started (gas supply step).

開始以自固定氣體噴嘴15供給之氣體，置換存在於檢測空間DS之氛圍(步驟S11)。即，於基板W之周緣部位於檢測空間DS之狀態下，開始以複數個固定氣體噴嘴15噴出之氣體，置換存在於檢測空間DS之氛圍之氛圍置換步驟。It starts to replace the atmosphere existing in the detection space DS with the gas supplied from the fixed gas nozzle 15 (step S11). That is, in a state where the peripheral edge of the substrate W is located in the detection space DS, the atmosphere replacement step of replacing the atmosphere existing in the detection space DS with the gas ejected by the plurality of fixed gas nozzles 15 is started.

開始氛圍置換步驟之後，藉由感測器13P測定基板W之偏心量(步驟S12)。即，於執行氛圍置換步驟之過程中，執行一面使基板W旋轉，一面藉由感測器13測定偏心量E之偏心量測定步驟。After the atmosphere replacement step is started, the amount of eccentricity of the substrate W is measured by the sensor 13P (step S12). That is, in the process of performing the atmosphere replacement|exchange process, the eccentricity measuring process of measuring the eccentricity E by the sensor 13 is performed while rotating the board|substrate W.

藉由感測器13P測定出偏心量E之後，控制器3判定偏心量E是否在特定之閾值以內(步驟S13：偏心量判定步驟)。特定之閾值例如為0.08 mm。偏心量E不在閾值以內之情形時(步驟S13：否)，於進行基板W之對位之前，進行確認基板W是否位於配置基板W之基準位置之位置確認步驟(步驟S14)。After the eccentricity amount E is measured by the sensor 13P, the controller 3 determines whether the eccentricity amount E is within a predetermined threshold value (step S13: eccentricity amount determination step). A specific threshold value is, for example, 0.08 mm. When the eccentric amount E is not within the threshold value (step S13: NO), before performing the alignment of the substrate W, a position confirmation step of confirming whether the substrate W is located at the reference position where the substrate W is arranged is performed (step S14).

具體而言，控制器3基於受光部71之檢測值，確認基板W是否位於基準位置。基準位置為基板W之中心軸線A2與基準面P1重合，且基板W之中心軸線A2與旋轉軸線A1於升降機120之移動方向(定心方向)排列之旋轉相位。Specifically, the controller 3 confirms whether or not the substrate W is located at the reference position based on the detection value of the light receiving unit 71 . The reference position is the rotation phase in which the central axis A2 of the substrate W and the reference plane P1 are coincident, and the central axis A2 of the substrate W and the rotation axis A1 are aligned in the moving direction (centering direction) of the elevator 120 .

基板W位於基準位置之情形時(步驟S14：是)，旋轉馬達23不使基板W及旋轉基座21旋轉，而使之於該位置靜止。基板W不位於基準位置之情形時(步驟S14：否)，旋轉馬達23使基板W及旋轉基座21旋轉至基準位置，並於基準位置靜止(步驟S15)。藉此，如圖17A所示，基板W之中心軸線A2與基準面P1重合，基板W配置於基準位置。When the substrate W is at the reference position (step S14: YES), the rotation motor 23 does not rotate the substrate W and the rotation base 21, but makes them stand still at that position. When the substrate W is not located at the reference position (step S14: NO), the rotary motor 23 rotates the substrate W and the rotation base 21 to the reference position, and is stationary at the reference position (step S15). Thereby, as shown to FIG. 17A, the center axis line A2 of the board|substrate W overlaps with the reference plane P1, and the board|substrate W is arrange|positioned in a reference position.

於將基板W配置於基準位置之狀態下，藉由定心單元14進行基板W之對位(對位步驟：步驟S16)。詳細而言，定心單元14P基於藉由感測器13P測定出之偏心量E，以基板W之中心軸線A2靠近旋轉軸線A1之方式，使基板W相對於旋轉基座21於定心方向水平移動。In a state where the substrate W is arranged at the reference position, the alignment of the substrate W is performed by the centering unit 14 (alignment step: step S16 ). Specifically, the centering unit 14P makes the centering direction of the substrate W horizontal with respect to the rotating base 21 so that the central axis A2 of the substrate W is close to the rotation axis A1 based on the eccentricity E measured by the sensor 13P move.

具體而言，如圖17B所示，藉由使第1升降機120A及第2升降機120B移動至提升位置，由第1升降機120A及第2升降機120B抬起旋轉基座21上之基板W。其後，如圖17C所示，藉由使第1升降機120A及第2升降機120B一體於定心方向移動，減少基板W之偏心量E。其後，藉由使第1升降機120A及第2升降機120B水平移動至退避位置，將基板W載置於旋轉基座21之保持面21a。Specifically, as shown in FIG. 17B , by moving the first lifter 120A and the second lifter 120B to the lifting position, the first lifter 120A and the second lifter 120B lift the substrate W on the spin base 21 . After that, as shown in FIG. 17C , the eccentric amount E of the substrate W is reduced by moving the first elevator 120A and the second elevator 120B integrally in the centering direction. Then, the board|substrate W is mounted on the holding surface 21a of the rotating base 21 by horizontally moving the 1st elevator 120A and the 2nd elevator 120B to the retracted position.

藉由對位步驟，基板W之中心軸線A2充分靠近旋轉基座21之旋轉軸線A1，消除基板W之偏心。Through the alignment step, the central axis A2 of the substrate W is sufficiently close to the rotation axis A1 of the rotating base 21, and the eccentricity of the substrate W is eliminated.

其後，藉由打開吸引閥28，將基板W吸附於旋轉基座21(吸附步驟：步驟S17)。其後，藉由關閉氣體閥63，檢測空間DS內之氛圍置換結束(步驟S18)。即，氛圍置換步驟結束。根據以上，基板位置調整處理(步驟S2)結束。Then, by opening the suction valve 28, the substrate W is sucked to the spin base 21 (suction step: step S17). Then, by closing the gas valve 63, the atmosphere replacement in the detection space DS is completed (step S18). That is, the atmosphere replacement step ends. From the above, the substrate position adjustment process (step S2 ) ends.

根據第2實施形態，以自固定氣體噴嘴15噴出之氣體(檢測空間DS外之氛圍)，置換存在於檢測空間DS之氛圍。因此，基板W之周緣部位於檢測空間DS時，可消除檢測空間DS之氛圍波動。其結果，可提高感測器13P之檢測精度，故可良好地減少基板W之偏心量E。According to the second embodiment, the atmosphere existing in the detection space DS is replaced with the gas (the atmosphere outside the detection space DS) ejected from the fixed gas nozzle 15 . Therefore, when the peripheral portion of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, so that the eccentric amount E of the substrate W can be reduced favorably.

如上所述，存在於環狀空間SP1之氛圍尤其易產生波動。第1固定氣體噴嘴15A朝保持於保持面21a之基板W之周緣部與加熱器50之間之環狀空間SP1噴出氣體。因此，可有效置換環狀空間SP1之氛圍。因此，可消除檢測空間SP1之氛圍波動。As described above, the atmosphere existing in the annular space SP1 is particularly susceptible to fluctuations. The first stationary gas nozzle 15A ejects gas toward the annular space SP1 between the peripheral edge portion of the substrate W held on the holding surface 21 a and the heater 50 . Therefore, the atmosphere of the annular space SP1 can be effectively replaced. Therefore, the fluctuation of the atmosphere of the detection space SP1 can be eliminated.

根據第2實施形態，作為氣體供給單元之複數個固定氣體噴嘴15包含沿發光部70與受光部71之對向方向D1排列之複數個氣體噴出口15a。因此，藉由自沿對向方向D1排列之複數個氣體噴出口15a噴出之氣體，不僅置換基板W之周緣部附近之部分氛圍，亦置換檢測空間SP全體之氛圍。因此，可提高感測器13P之檢測精度。According to the second embodiment, the plurality of fixed gas nozzles 15 serving as the gas supply means includes the plurality of gas ejection ports 15a arranged along the opposing direction D1 of the light-emitting portion 70 and the light-receiving portion 71 . Therefore, the gas ejected from the plurality of gas ejection ports 15a arranged in the opposite direction D1 replaces not only part of the atmosphere near the peripheral portion of the substrate W, but also the entire atmosphere of the detection space SP. Therefore, the detection accuracy of the sensor 13P can be improved.

根據第2實施形態，複數個固定氣體噴嘴15安裝於安裝板16，一體形成有複數個固定氣體噴嘴15之安裝部115及噴出部116。因此，可將複數個固定氣體噴嘴15牢固地固定於安裝板16，可將固定氣體噴嘴15彼此之位置關係牢固地固定。因此，可準確地朝檢測空間DS供給氣體。According to the second embodiment, the plurality of stationary gas nozzles 15 are attached to the attachment plate 16, and the attachment portion 115 and the ejection portion 116 of the plurality of stationary gas nozzles 15 are integrally formed. Therefore, the plurality of fixed gas nozzles 15 can be firmly fixed to the mounting plate 16, and the positional relationship between the fixed gas nozzles 15 can be firmly fixed. Therefore, the gas can be accurately supplied to the detection space DS.

圖18A及圖18B係用以針對第2實施形態之基板處理中執行之氛圍置換步驟之變化例進行說明之模式圖。18A and 18B are schematic diagrams for explaining a modification of the atmosphere replacement step performed in the substrate processing of the second embodiment.

第2實施形態之基板處理裝置1P中，亦可不進行自固定氣體噴嘴15噴出氣體，而進行由利用氣流形成單元10形成之氣流F，置換檢測空間DS內之氛圍。具體而言，以切換氣流F之路徑之方式構成第1防護件30A，且氣流F之路徑如下切換：第1防護件30A位於上位置時，氣流F通過基板W之周緣部與第1防護件30A之內周端部(上端部)之間，第1防護件30A位於下位置時，氣流F通過第1防護件30A之外側。In the substrate processing apparatus 1P of the second embodiment, the gas flow F formed by the gas flow forming unit 10 may be performed instead of ejecting gas from the fixed gas nozzle 15 to replace the atmosphere in the detection space DS. Specifically, the first guard 30A is configured to switch the path of the airflow F, and the path of the airflow F is switched as follows: when the first guard 30A is at the upper position, the airflow F passes through the peripheral edge of the substrate W and the first guard Between inner peripheral ends (upper ends) of 30A, when the first guard 30A is located at the lower position, the airflow F passes through the outside of the first guard 30A.

更具體而言，如圖18A所示，第1防護件30A位於上位置時，由於基板W之周緣部與第1防護件30A之內周端之間之間隙變大，故氣流F主要通過第1防護件30A之內周端部與基板W之周緣部之間，到達排氣管34之上游端34a(氣流形成步驟)。另一方面，如圖18B所示，第1防護件30A位於下位置時，基板W之周緣部與第1防護件30A之內周端部之間之間隙較第1防護件30A位於上位置時小。因此，氣流F主要通過第1防護件30A與排氣桶33之間之間隙，到達排氣管34之上游端34a。More specifically, as shown in FIG. 18A , when the first guard 30A is at the upper position, since the gap between the peripheral edge portion of the substrate W and the inner peripheral end of the first guard 30A becomes larger, the airflow F mainly passes through the first guard 30A. 1. Between the inner peripheral end of the guard 30A and the peripheral edge of the substrate W, reaches the upstream end 34a of the exhaust pipe 34 (air flow forming step). On the other hand, as shown in FIG. 18B , when the first guard 30A is at the lower position, the gap between the peripheral edge portion of the substrate W and the inner peripheral end of the first guard 30A is higher than when the first guard 30A is at the upper position Small. Therefore, the airflow F mainly passes through the gap between the first guard 30A and the exhaust barrel 33 to reach the upstream end 34 a of the exhaust pipe 34 .

如此，藉由將第1防護件30A配置於上位置，於腔室8內形成通過基板W之周緣部與第1防護件30A之間流向排氣管34之氣流F。藉此，可以由氣流F攜帶之氣體置換基板W之周緣部附近之氛圍。即，由氣流形成單元10及排氣管34構成之給排氣單元作為氛圍置換單元發揮功能。因此，基板W之周緣部位於檢測空間DS時，可消除檢測空間DS之氛圍波動。其結果，可提高感測器13P之檢測精度，故可藉由定心單元14，良好地減少基板W之偏心量E。In this way, by arranging the first guard 30A at the upper position, the airflow F that flows to the exhaust pipe 34 between the peripheral edge portion of the substrate W and the first guard 30A is formed in the chamber 8 . Thereby, the atmosphere in the vicinity of the peripheral portion of the substrate W can be replaced by the gas carried by the gas flow F. As shown in FIG. That is, the air supply and exhaust unit constituted by the airflow forming unit 10 and the exhaust pipe 34 functions as an atmosphere replacement unit. Therefore, when the peripheral portion of the substrate W is located in the detection space DS, the fluctuation of the atmosphere in the detection space DS can be eliminated. As a result, the detection accuracy of the sensor 13P can be improved, so that the eccentric amount E of the substrate W can be reduced favorably by the centering unit 14 .

又，亦可於排氣桶33與第1防護件30A之間，設置徑路寬度調整機構160，其於第1防護件30A位於上位置時，縮窄排氣桶33與第1防護件30A之間之氣流F通過之路徑。路徑寬度調整機構160例如由自第1防護件30A之第1筒狀部35A朝與防護件30之中心側為相反側突出之第1凸緣161、與自排氣桶33朝防護件30之中心側突出之第2凸緣162構成。第1凸緣161及第2凸緣162於鉛直方向互相對向，第1防護件30A愈靠近上位置，第1凸緣161與第2凸緣162之間之間隙愈窄。In addition, a path width adjustment mechanism 160 may be provided between the exhaust bucket 33 and the first guard 30A, which narrows the exhaust bucket 33 and the first guard 30A when the first guard 30A is at the upper position. The path through which the airflow F between them passes. The path width adjustment mechanism 160 includes, for example, a first flange 161 protruding from the first cylindrical portion 35A of the first guard 30A toward the side opposite to the center side of the guard 30 , and a connection from the exhaust barrel 33 toward the guard 30 . The second flange 162 protruding from the center side is constituted. The first flange 161 and the second flange 162 face each other in the vertical direction. The closer the first guard 30A is to the upper position, the narrower the gap between the first flange 161 and the second flange 162 is.

＜其他實施形態＞<Other Embodiments>

本發明並非限定於以上說明之實施形態，亦可進而以其他形態實施。The present invention is not limited to the embodiment described above, and can be further implemented in other forms.

例如，上述實施形態中，基板處理裝置1、1P具備搬送機械手IR、CR、處理單元2及控制器3。然而，基板處理裝置1、1P亦可僅由處理單元2構成。換言之，處理單元2亦可為基板處理裝置之一例。For example, in the above-described embodiment, the substrate processing apparatuses 1 and 1P include the transfer robots IR and CR, the processing unit 2 , and the controller 3 . However, the substrate processing apparatuses 1 and 1P may be constituted only by the processing unit 2 . In other words, the processing unit 2 may also be an example of a substrate processing apparatus.

又，上述實施形態中，感測器13、13P中，發光部70及受光部71之對向方向D1沿鉛直方向。然而，對向方向D1不一定沿鉛直方向，亦可相對於鉛直方向傾斜。換言之，亦可於高軸相對於鉛直方向傾斜之方向延伸。In addition, in the above-described embodiment, in the sensors 13 and 13P, the opposing direction D1 of the light-emitting portion 70 and the light-receiving portion 71 is along the vertical direction. However, the facing direction D1 is not necessarily along the vertical direction, and may be inclined with respect to the vertical direction. In other words, it may extend in the direction in which the high axis is inclined with respect to the vertical direction.

又，第1實施形態中，亦可以切換氣流F之路徑之方式構成第1防護件30A，且氣流F之路徑如下切換：第1防護件30A位於上位置時，氣流F通過基板W之周緣部與第1防護件30A之內周端部之間，第1防護件30A位於下位置時，氣流F通過第1防護件30A之外側。因此，需要以第1防護件30A位於上位置時，移動氣體噴嘴頭12可移動至檢測位置之方式，於第1防護件30A設置移動容許孔。Furthermore, in the first embodiment, the first guard 30A may be configured to switch the path of the airflow F, and the path of the airflow F can be switched as follows: When the first guard 30A is at the upper position, the airflow F passes through the peripheral edge of the substrate W Between the inner peripheral end of the first guard 30A, when the first guard 30A is located at the lower position, the airflow F passes through the outer side of the first guard 30A. Therefore, when the first guard 30A is located at the upper position, it is necessary to provide a movement permitting hole in the first guard 30A so that the moving gas nozzle head 12 can move to the detection position.

又，第2實施形態中可應用定心單元14，相反地，若將容許移動氣體噴嘴頭12移動至檢測位置之移動容許孔設置於第1防護件30A，則亦可將定心單元14P應用於第1實施形態。In addition, the centering unit 14 can be applied to the second embodiment. Conversely, the centering unit 14P can also be applied if a movement permitting hole that allows the movement of the gas nozzle head 12 to the detection position is provided in the first guard 30A. in the first embodiment.

又，第2實施形態中，亦可取代複數個固定氣體噴嘴15，而設置單一之固定氣體噴嘴，且該單一之固定氣體噴嘴設置有複數個氣體噴出口15a。又，第1實施形態中，亦可於移動氣體噴嘴頭12，設置於對向方向D1排列之複數個噴出口60a。Furthermore, in the second embodiment, instead of the plurality of fixed gas nozzles 15, a single fixed gas nozzle may be provided, and the single fixed gas nozzle may be provided with a plurality of gas ejection ports 15a. In addition, in the first embodiment, the gas nozzle head 12 may be moved to provide a plurality of ejection ports 60a arranged in the opposing direction D1.

又，第2實施形態中，第1對向面127A及第2對向面127B以隨著朝向上方而互相離開之方式，相對於水平方向傾斜。然而，第1對向面127A及第2對向面127B亦可為鉛直面。該情形時，於藉由2個升降機120自水平方向之兩側固持基板W之狀態下，使第1防護件30A朝上方移動，藉此可使基板W自旋轉基座21上浮。Moreover, in 2nd Embodiment, the 1st opposing surface 127A and the 2nd opposing surface 127B are inclined with respect to the horizontal direction so that it may separate from each other as it goes up. However, the first opposing surface 127A and the second opposing surface 127B may be vertical surfaces. In this case, the substrate W can be floated from the spin base 21 by moving the first guard 30A upward while the substrate W is held by the two elevators 120 from both sides in the horizontal direction.

又，自移動氣體噴嘴60噴出之氣體及自第1固定氣體噴嘴15A噴出之氣體亦可不形成朝向環狀空間SP1之氣流，只要可抑制產生因加熱器50之加熱引起之檢測空間DS內之氛圍波動即可。In addition, the gas ejected from the moving gas nozzle 60 and the gas ejected from the first stationary gas nozzle 15A may not form the airflow toward the annular space SP1, as long as the generation of the atmosphere in the detection space DS caused by the heating of the heater 50 can be suppressed. Just fluctuate.

上述實施形態中，有以區塊模式性顯示各構成之情形，但各區塊之形狀、大小及位置關係並非表示各構成之形狀、大小及位置關係者。In the above-mentioned embodiment, each component is shown schematically in blocks, but the shape, size, and positional relationship of each block do not represent the shape, size, and positional relationship of each component.

雖已針對本發明之實施形態進行詳細說明，但其只不過係用於明確本發明之技術性內容之具體例，本發明不應限定於該等具體例而解釋，本發明之範圍僅由隨付之申請專利範圍限定。Although the embodiments of the present invention have been described in detail, they are only specific examples for clarifying the technical content of the present invention, the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is only limited by the following. The scope of the patent application is limited.

[相關申請案] 本申請案與2020年9月24日向日本專利廳提交之日本專利特願2020-159314號對應，該申請案之所有揭示以引用之方式併入於此。 [Related applications] This application corresponds to Japanese Patent Application No. 2020-159314 filed with the Japan Patent Office on September 24, 2020, and all the disclosures of this application are incorporated herein by reference.

1:基板處理裝置 1P:基板處理裝置 2:處理單元 3:控制器 4:處理器 5:記憶體 6:旋轉夾盤 7:處理杯 8:腔室 8A:側壁 8B:上壁 8C:下壁 8a:送風口 9:周緣噴嘴頭 10:氣流形成單元 10A:FFU 10B:整流板 11:加熱單元 12:移動氣體噴嘴頭 13:感測器 13P:感測器 14:感測單元 14P:感測單元 15:固定氣體噴嘴 15A:第1固定氣體噴嘴 15B:第2固定氣體噴嘴 15a:氣體噴出口 16:安裝板 17:下側周緣噴嘴頭 21:旋轉基座 21a:保持面 22:旋轉軸 23:旋轉馬達 24:馬達外殼 25:吸引路徑 25a:吸引口 26:吸引配管 27:吸引單元 28:吸引閥 30:防護件 30A:第1防護件 30B:第2防護件 31:杯 31A:第1杯 31B:第2杯 33:排氣桶 34:排氣管 34a:上游端 35A:第1筒狀部 35B:第2筒狀部 36A:第1延設部 36B:第2延設部 37:防護件升降單元 40:周緣噴嘴 40A:第1周緣藥液噴嘴 40B:第2周緣藥液噴嘴 40C:周緣清洗液噴嘴 40D:周緣氣體噴嘴 41:噴嘴支持構件 42:處理流體配管 43:處理流體閥 44:周緣噴嘴移動單元 45:頭支持臂 50:加熱器 50a:對向面 50b:缺口 50c:氣體噴出口 51:加熱流路 52:加熱器本體部 52a:下構件 52b:中構件 52c:上構件 52d:連結流路 53:發熱體 55:氣體送出單元 56:餽電線 57:通電單元 58:氣體供給配管 59:流路開閉閥 60:移動氣體噴嘴 60a:噴出口 61:噴嘴支持構件 61a:發光部支持部 61b:受光部支持部 61c:連結部 62:氣體配管 63:氣體閥 65:氣體噴嘴移動單元 66:氣體噴嘴臂 70:發光部 70a:發光面 71:受光部 71a:受光面 73:下側處理流體閥 75:下側周緣噴嘴 75A:第1下側周緣藥液噴嘴 75B:第2下側周緣藥液噴嘴 75C:下側周緣清洗液噴嘴 76:噴嘴支持構件 77:下側處理流體配管 78:下側處理流體閥 80:提升銷 80a:前端部 81:連結構件 85:銷鉛直移動機構 86:固定體 87:可動體 88:驅動機構 90:銷水平移動機構 90P:升降機水平移動機構 91:固定體 92:可動體 93:驅動機構 94:位置測定感測器 95:收容構件 95a:貫通孔 96:密封構件 100:感測器外殼 110:氣體配管 111:氣體閥 115:安裝部 115a:插通孔 116:噴出部 116a:平坦面 116b:平坦面 117:內部流路 118:緊固構件 120:升降機 120A:第1升降機 120B:第2升降機 122:第1升降機水平移動機構 123:第2升降機水平移動機構 125:氣缸 125a:缸本體 125b:桿 127:對向面 127A:第1對向面 127B:第2對向面 140:滑動支架 140a:底板 140b:關節臂 141:線性馬達 142:線性導件 143:主基座 145:單元外殼 160:徑路寬度調整機構 161:第1凸緣 162:第2凸緣 A1:旋轉軸線 A2:中心軸線 C:載體 C1:中心部 CR:搬送機械手 D1:對向方向 D2:噴出方向 D3:噴出方向 D4:噴出方向 DA:合計移位量 DS:檢測空間 E:偏心量 F:氣流 H:熱線 HS:水平面 IR:搬送機械手 L:光 LP:裝載埠 P1:基準面 S1～S8:步驟 S10～S19:步驟 SL:直線 SP:檢測空間 SP1:環狀空間 SP2:環狀空間 SS:支持部內空間 W:基板 θ:角度 1: Substrate processing device 1P: Substrate processing device 2: Processing unit 3: Controller 4: Processor 5: Memory 6: Rotary chuck 7: Processing Cup 8: Chamber 8A: Sidewall 8B: Upper Wall 8C: Lower Wall 8a: air outlet 9: Peripheral nozzle head 10: Airflow forming unit 10A: FFU 10B: Rectifier plate 11: Heating unit 12: Move the gas nozzle head 13: Sensor 13P: Sensor 14: Sensing unit 14P: Sensing unit 15: Fixed gas nozzle 15A: 1st fixed gas nozzle 15B: 2nd fixed gas nozzle 15a: Gas ejection port 16: Mounting plate 17: Lower peripheral nozzle head 21: Swivel base 21a: Keep Faces 22: Rotary axis 23: Rotary Motor 24: Motor housing 25: Path of Attraction 25a: Attraction mouth 26: Suction piping 27: Attraction Unit 28: Suction valve 30: Guards 30A: 1st Guard 30B: 2nd guard 31: Cup 31A: 1st cup 31B: 2nd cup 33: Exhaust barrel 34: Exhaust pipe 34a: Upstream 35A: 1st cylindrical part 35B: Second cylindrical part 36A: Extension 1 36B: Second Extension 37: Guard lift unit 40: Peripheral nozzle 40A: 1st peripheral liquid spray nozzle 40B: 2nd peripheral liquid spray nozzle 40C: Peripheral cleaning fluid nozzle 40D: Peripheral Gas Nozzle 41: Nozzle support member 42: Handling fluid piping 43: Handling Fluid Valves 44: Peripheral nozzle moving unit 45: Head Support Arm 50: Heater 50a: Opposite side 50b: Notch 50c: Gas outlet 51: Heating flow path 52: Heater body 52a: Lower member 52b: Middle component 52c: Upper member 52d: Link flow path 53: Heater 55: Gas delivery unit 56: Feeder 57: Power-on unit 58: Gas supply piping 59: Flow path opening and closing valve 60: Mobile Gas Nozzle 60a: ejection port 61: Nozzle support member 61a: Light-emitting part support part 61b: Light receiving part support part 61c: Links 62: Gas piping 63: Gas valve 65: Gas nozzle moving unit 66: Gas Nozzle Arm 70: Light-emitting part 70a: Luminous surface 71: Light receiving part 71a: light-receiving surface 73: Lower processing fluid valve 75: Lower peripheral nozzle 75A: 1st lower peripheral chemical liquid nozzle 75B: 2nd lower peripheral chemical liquid nozzle 75C: Lower peripheral cleaning fluid nozzle 76: Nozzle support member 77: Lower processing fluid piping 78: Lower Process Fluid Valve 80: Lifting Pin 80a: Front end 81: Connecting components 85: Pin vertical movement mechanism 86: Fixed body 87: Movable body 88: Drive mechanism 90: Pin horizontal movement mechanism 90P: Elevator Horizontal Movement Mechanism 91: Fixed body 92: Movable body 93: Drive mechanism 94: Position Determination Sensor 95: Containment Structure 95a: Through hole 96: Sealing member 100: Sensor housing 110: Gas piping 111: Gas valve 115: Installation Department 115a: through hole 116: Ejection Department 116a: flat surface 116b: flat face 117: Internal flow path 118: Fastening components 120: Lift 120A: 1st lift 120B: 2nd lift 122: The first elevator horizontal movement mechanism 123: Second elevator horizontal movement mechanism 125: Cylinder 125a: Cylinder body 125b: Rod 127: Opposite 127A: Opposite side 1 127B: Opposite side 2 140: Sliding bracket 140a: Bottom plate 140b: Articulated Arm 141: Linear Motor 142: Linear guide 143: Main Pedestal 145: Unit enclosure 160: Path width adjustment mechanism 161: 1st flange 162: 2nd flange A1: Rotation axis A2: Center axis C: carrier C1: Center CR: transfer robot D1: opposite direction D2: ejection direction D3: ejection direction D4: ejection direction DA: Total shift amount DS: Detection Space E: Eccentricity F: Airflow H: hotline HS: Horizontal plane IR: transfer robot L: light LP: Load port P1: Datum plane S1～S8: Steps S10～S19: Steps SL: straight line SP: detection space SP1: Annular space SP2: Annulus SS: Support for internal space W: substrate θ: angle

圖1係顯示本發明之第1實施形態之基板處理裝置之內部構成之圖解俯視圖。 圖2係用以說明配備於上述基板處理裝置之處理單元之構成例之模式圖。 圖3係配備於上述處理單元之旋轉夾盤及其周邊之模式性俯視圖。 圖4係配備於上述處理單元之加熱單元之周邊之剖視圖。 圖5係用以說明配備於上述處理單元之移動氣體噴嘴頭及感測器之構成之模式圖。 圖6係配備於上述處理單元之定心單元之周邊之剖視圖。 圖7係顯示上述基板處理裝置之主要部之電性構成之方塊圖。 圖8係用以說明藉由上述基板處理裝置執行之基板處理之一例之流程圖。 圖9係用以針對上述基板處理中之基板位置調整處理(步驟S2)進行說明之流程圖。 圖10A～圖10C係用以說明進行上述基板位置調整處理之一例時之基板狀況之模式圖。 圖11係用以說明進行檢測空間內之氛圍置換前後之偏心量之測定值之差異之圖表。 圖12係用以說明配備於第2實施形態之基板處理裝置之處理單元之構成例之模式圖。 圖13係第2實施形態之處理單元之模式性俯視圖。 圖14A係自水平方向觀察配備於上述處理單元之複數個固定氣體噴嘴之模式圖。 圖14B係複數個上述固定氣體噴嘴之周邊之立體圖。 圖14C係複數個上述固定氣體噴嘴之俯視圖。 圖15係配備於第2實施形態之處理單元之定心單元之周邊之剖視圖。 圖16係用以針對第2實施形態之基板處理中之基板位置調整處理(步驟S2)進行說明之流程圖。 圖17A～圖17C係用以說明進行第2實施形態之基板位置調整處理之一例時之基板狀況之模式圖。 圖18A及圖18B係用以針對第2實施形態之基板處理中執行之氛圍置換步驟之變化例進行說明之模式圖。 FIG. 1 is a schematic plan view showing the internal structure of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic diagram for explaining a configuration example of a processing unit provided in the above-mentioned substrate processing apparatus. FIG. 3 is a schematic plan view of the spin chuck equipped with the above-mentioned processing unit and its periphery. FIG. 4 is a cross-sectional view of the periphery of the heating unit provided in the above-mentioned processing unit. FIG. 5 is a schematic diagram for explaining the configuration of the moving gas nozzle head and the sensor provided in the above-mentioned processing unit. FIG. 6 is a cross-sectional view of the periphery of the centering unit provided in the above-mentioned processing unit. FIG. 7 is a block diagram showing the electrical configuration of the main part of the above-mentioned substrate processing apparatus. FIG. 8 is a flowchart for explaining an example of substrate processing performed by the above-described substrate processing apparatus. FIG. 9 is a flowchart for explaining the substrate position adjustment process (step S2 ) in the above-mentioned substrate processing. 10A to 10C are schematic views for explaining the state of the substrate when an example of the above-described substrate position adjustment process is performed. FIG. 11 is a graph for explaining the difference in the measured value of the eccentricity amount before and after performing the atmospheric replacement in the detection space. FIG. 12 is a schematic diagram for explaining a configuration example of a processing unit provided in the substrate processing apparatus of the second embodiment. Fig. 13 is a schematic plan view of the processing unit of the second embodiment. FIG. 14A is a schematic view of a plurality of fixed gas nozzles provided in the above-mentioned processing unit viewed from a horizontal direction. FIG. 14B is a perspective view of the periphery of a plurality of the above-mentioned fixed gas nozzles. Figure 14C is a top view of a plurality of the above-mentioned stationary gas nozzles. Fig. 15 is a cross-sectional view of the periphery of the centering unit provided in the processing unit of the second embodiment. FIG. 16 is a flowchart for explaining the substrate position adjustment process (step S2 ) in the substrate process of the second embodiment. 17A to 17C are schematic views for explaining the state of the substrate when an example of the substrate position adjustment process of the second embodiment is performed. 18A and 18B are schematic diagrams for explaining a modification of the atmosphere replacement step performed in the substrate processing of the second embodiment.

12:移動氣體噴嘴頭 12: Move the gas nozzle head

13:感測器 13: Sensor

21:旋轉基座 21: Swivel base

21a:保持面 21a: Keep Faces

50:加熱器 50: Heater

50a:對向面 50a: Opposite side

60:移動氣體噴嘴 60: Mobile Gas Nozzle

60a:噴出口 60a: ejection port

61:噴出支持構件 61: Ejection support member

61a:發光部支持部 61a: Light-emitting part support part

61b:受光部支持部 61b: Light receiving part support part

61c:連結部 61c: Links

62:氣體配管 62: Gas piping

63:氣體閥 63: Gas valve

65:氣體噴嘴移動單元 65: Gas nozzle moving unit

66:氣體噴嘴臂 66: Gas Nozzle Arm

70:發光部 70: Light-emitting part

70a:發光面 70a: Luminous surface

71:受光部 71: Light receiving part

71a:受光面 71a: light-receiving surface

A1:旋轉軸線 A1: Rotation axis

A2:中心軸線 A2: Center axis

C1:中心部 C1: Center

D1:對向方向 D1: opposite direction

D2:噴出方向 D2: ejection direction

DS:檢測空間 DS: Detection Space

E:偏心量 E: Eccentricity

L:光 L: light

SP1:環狀空間 SP1: Annular space

SS:支持部內空間 SS: Support for internal space

W:基板 W: substrate

Claims (14)

一種基板處理裝置，其具備： 基座，其具有將圓板狀基板以水平姿勢保持之保持面； 旋轉單元，其使上述基座繞鉛直之旋轉軸線旋轉； 加熱單元，其將保持於上述保持面之基板之周緣部加熱； 偏心量測定單元，其具有發出光之發光部及接受自上述發光部發出之光之受光部，於保持於上述保持面之基板之周緣部位於上述發光部與上述受光部之間之檢測空間內時，測定該基板相對於上述旋轉軸線之偏心量； 定心單元，其使上述保持面上之基板相對於上述基座移動，使該基板之中心部靠近上述旋轉軸線；及 氛圍置換單元，其由上述檢測空間外之氛圍置換存在於上述檢測空間內之氛圍。 A substrate processing apparatus comprising: a base having a holding surface for holding the disk-shaped substrate in a horizontal position; A rotating unit, which rotates the above-mentioned base around a vertical axis of rotation; a heating unit, which heats the peripheral portion of the substrate held on the above-mentioned holding surface; An eccentricity measuring unit comprising a light-emitting portion that emits light and a light-receiving portion that receives light emitted from the light-emitting portion, and is located in a detection space between the light-emitting portion and the light-receiving portion at a peripheral edge portion of a substrate held on the holding surface When , measure the eccentricity of the base plate relative to the above-mentioned rotation axis; a centering unit that moves the base plate on the holding surface relative to the base so that the center portion of the base plate is close to the rotation axis; and An atmosphere replacement unit, which replaces the atmosphere existing in the detection space with the atmosphere outside the detection space. 如請求項1之基板處理裝置，其中上述氛圍置換單元包含朝上述檢測空間供給上述氣體之氣體供給單元。The substrate processing apparatus according to claim 1, wherein the atmosphere replacement unit includes a gas supply unit that supplies the gas to the detection space. 如請求項2之基板處理裝置，其中上述加熱單元包含與保持於上述保持面之基板之周緣部對向之加熱器， 上述氣體供給單元朝保持於上述保持面之基板之周緣部與上述加熱器之間之空間噴出氣體。 The substrate processing apparatus according to claim 2, wherein the heating unit includes a heater facing the peripheral edge of the substrate held on the holding surface, The gas supply unit ejects gas toward the space between the peripheral edge portion of the substrate held on the holding surface and the heater. 如請求項2或3之基板處理裝置，其中上述氣體供給單元包含沿上述發光部與上述受光部之對向方向排列之複數個氣體噴出口。The substrate processing apparatus according to claim 2 or 3, wherein the gas supply unit includes a plurality of gas ejection ports arranged in a direction opposite to the light-emitting portion and the light-receiving portion. 如請求項4之基板處理裝置，其中上述氣體供給單元包含：各自具有複數個上述氣體噴出口之複數個固定氣體噴嘴、及供共通安裝複數個上述固定氣體噴嘴之安裝板， 上述固定氣體噴嘴包含：安裝於上述安裝板之安裝部、及與上述安裝部一體形成，且設置有上述氣體噴出口之噴出部。 The substrate processing apparatus according to claim 4, wherein the gas supply unit comprises: a plurality of fixed gas nozzles each having a plurality of the gas ejection ports; and a mounting plate for mounting the plurality of the fixed gas nozzles in common, The fixed gas nozzle includes a mounting portion mounted on the mounting plate, and an ejection portion formed integrally with the mounting portion and provided with the gas ejection port. 如請求項2或3之基板處理裝置，其中上述氣體供給單元包含移動氣體噴嘴頭，其係與上述發光部及上述受光部一起移動，對上述檢測空間供給氣體者，且於保持於上述保持面之基板之周緣部位於上述檢測空間內之檢測位置、與保持於上述保持面之基板之周緣部位於上述檢測空間外之退避位置之間移動。The substrate processing apparatus according to claim 2 or 3, wherein the gas supply unit includes a moving gas nozzle head that moves together with the light-emitting portion and the light-receiving portion to supply gas to the detection space, and is held on the holding surface The peripheral edge portion of the substrate is located at the detection position within the detection space, and the peripheral edge portion of the substrate held on the holding surface is located at the retracted position outside the detection space. 如請求項1至3中任一項之基板處理裝置，其進而具備收容上述基座之腔室， 上述氛圍置換單元包含給排氣單元，其進行向上述腔室內之空間給氣、及自上述腔室內之空氣的排氣。 The substrate processing apparatus according to any one of claims 1 to 3, further comprising a chamber for accommodating the susceptor, The above-mentioned atmosphere replacement unit includes an air supply and exhaust unit that performs air supply to the space in the chamber and exhaust of the air from the chamber. 如請求項7之基板處理裝置，其進而包含防護件，該防護件係包圍保持於上述保持面之基板者，且構成為於上述防護件之上端部位於較該基板之上表面上方之上位置、與上述防護件之上端部位於較該基板之上表面下方之下位置之間移動；且 上述給排氣單元包含：排氣管，其將上述腔室內之氛圍排氣；及氣流形成單元，其對上述腔室內供給氛圍，將朝向上述排氣管之氣流形成於上述腔室內； 上述防護件如下切換上述氣流之路徑：上述防護件位於上述上位置時，上述氣流通過保持於上述保持面之基板之周緣部與上述防護件之間，上述防護件位於上述下位置時，上述氣流通過上述防護件之外側。 The substrate processing apparatus according to claim 7, further comprising a guard that surrounds the substrate held on the holding surface and is configured so that the upper end of the guard is positioned above the upper surface of the substrate , and the upper end of the above-mentioned protective member is located in a position lower than the upper surface of the base plate; and The above-mentioned air supply and exhaust unit comprises: an exhaust pipe, which exhausts the atmosphere in the above-mentioned chamber; and an air flow forming unit, which supplies the atmosphere in the above-mentioned chamber, and forms an air flow toward the above-mentioned exhaust pipe in the above-mentioned chamber; The above-mentioned guard switches the path of the above-mentioned air flow as follows: when the above-mentioned guard is located at the above-mentioned upper position, the above-mentioned air flow passes between the peripheral edge portion of the base plate held on the above-mentioned holding surface and the above-mentioned guard member, and when the above-mentioned guard is located at the above-mentioned lower position, the above-mentioned air flow through the outside of the above guard. 如請求項1至3中任一項之基板處理裝置，其中上述定心單元包含：升降機，其構成為抬起保持於上述保持面之基板，或將該抬起之基板載置於上述保持面；及升降機水平移動機構，其藉由使上述升降機水平移動，而使該基板之中心部靠近上述旋轉軸線。The substrate processing apparatus according to any one of claims 1 to 3, wherein the centering unit includes a lifter configured to lift the substrate held on the holding surface or place the lifted substrate on the holding surface ; and an elevator horizontal moving mechanism, which makes the center portion of the base plate approach the above-mentioned rotation axis by horizontally moving the above-mentioned elevator. 如請求項9之基板處理裝置，其中上述升降機設置有複數個，且 複數個上述升降機具有自較保持於上述保持面之基板下方，與該基板對向之對向部， 上述定心單元進而包含：升降機鉛直移動機構，其使上述對向部於較上述保持面上方之第1位置、與較上述保持面下方之第2位置之間，於鉛直方向移動。 The substrate processing apparatus of claim 9, wherein a plurality of the lifters are provided, and A plurality of the above-mentioned elevators have opposite portions facing the base plate from below the base plate held on the above-mentioned holding surface, The centering unit further includes an elevator vertical movement mechanism that moves the opposing portion in the vertical direction between a first position above the holding surface and a second position below the holding surface. 如請求項9之基板處理裝置，其中上述升降機設置有複數個， 複數個上述升降機包含：第1升降機，其具有自水平方向與保持於上述保持面之基板之周緣部對向之第1對向面；及第2升降機，其具有自與上述第1對向面為相反側，自水平方向與保持於上述保持面之基板之周緣部對向的第2對向面；且 上述升降機水平移動機構包含：第1升降機水平移動機構，其使上述第1升降機及上述第2升降機個別地水平移動；及第2升降機水平移動機構，其使上述第1升降機及上述第2升降機一體地水平移動， 上述第1對向面及上述第2對向面以隨著朝向上方而互相離開之方式，相對於水平方向傾斜。 The substrate processing apparatus according to claim 9, wherein a plurality of said elevators are provided, The plurality of said elevators include: a first elevator having a first facing surface that faces a peripheral edge portion of a substrate held on the holding surface from a horizontal direction; and a second elevator having a first facing surface from a horizontal direction is the opposite side, the second facing surface that faces the peripheral edge portion of the substrate held on the above-mentioned holding surface from the horizontal direction; and The elevator horizontal movement mechanism includes: a first elevator horizontal movement mechanism that horizontally moves the first elevator and the second elevator individually; and a second elevator horizontal movement mechanism that integrates the first elevator and the second elevator move horizontally, The said 1st opposing surface and the said 2nd opposing surface are inclined with respect to a horizontal direction so that it may separate from each other as it goes up. 一種基板位置調整方法，其包含： 基板保持步驟，其以加熱器與圓板狀基板之周緣部對向之方式，將上述基板以水平姿勢保持於基座之保持面； 氛圍置換步驟，其於上述基板之周緣部位於具有發光部及受光部之感測器之上述發光部及上述受光部之間之空間即檢測空間之狀態下，以上述檢測空氣外之氛圍置換存在於上述檢測空間之氛圍； 偏心量測定步驟，其於執行上述氛圍置換步驟執行之過程中，一面使上述基座繞鉛直之旋轉軸線旋轉，一面藉由上述感測器檢測該基板相對於上述旋轉軸線之偏心量；及 對位步驟，其根據藉由上述偏心量測定步驟檢測出之偏心量，使上述基板相對於上述基座移動，藉此使上述基板之中心部靠近上述旋轉軸線。 A method for adjusting the position of a substrate, comprising: the substrate holding step, which holds the substrate in a horizontal position on the holding surface of the base in such a way that the heater faces the peripheral edge of the disc-shaped substrate; Atmosphere replacement step, in the state where the peripheral edge of the substrate is located in the space between the light-emitting portion and the light-receiving portion of the sensor having the light-emitting portion and the light-receiving portion, that is, the detection space, replace the presence with the atmosphere outside the detection air The atmosphere in the above-mentioned testing space; The eccentricity measuring step, in which the eccentricity of the base plate relative to the rotation axis is detected by the sensor while the base plate is rotated around the vertical axis of rotation during the execution of the air replacement step; and The alignment step moves the substrate relative to the base according to the eccentric amount detected in the eccentric amount measuring step, thereby bringing the center portion of the substrate close to the rotation axis. 如請求項12之基板位置調整方法，其中上述氛圍置換步驟包含朝上述檢測空間供給上述氣體之氣體供給步驟。The substrate position adjustment method according to claim 12, wherein the atmosphere replacement step includes a gas supplying step of supplying the gas to the detection space. 如請求項12或13之基板位置調整方法，其中上述氛圍置換步驟包含氣流形成步驟，該氣流形成步驟藉由將防護件配置於上位置，而於收容上述防護件及上述基座之腔室內，形成通過上述基板之周緣部與上述防護件之間流向排氣管之氣流，且上述防護件係包圍上述基板者，構成為於該防護件之上端部位於較該基板之上表面上方之上位置、與該防護件之上端部位於較該基板之上表面下方之下位置之間移動。The method for adjusting the position of the substrate according to claim 12 or 13, wherein the step of replacing the atmosphere includes a step of forming an air flow, and the step of forming the air flow is in the cavity for accommodating the guard and the base by arranging the guard at the upper position, The airflow to the exhaust pipe is formed between the peripheral edge portion of the base plate and the guard member, and the guard member surrounds the base plate, so that the upper end portion of the guard member is located above the upper surface of the base plate. , and the upper end of the protection piece is positioned lower than the upper surface of the base plate and moves between the positions.
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JP7072415B2 (en) * 2018-03-26 2022-05-20 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and board processing equipment
JP7227729B2 (en) * 2018-10-23 2023-02-22 株式会社Ｓｃｒｅｅｎホールディングス SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP7446714B2 (en) 2019-02-01 2024-03-11 株式会社荏原製作所 Substrate processing equipment and substrate processing method

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