KR20230068176A - Substrate processing apparatus - Google Patents

Abstract

A substrate processing device is disclosed. The substrate processing device comprises: a chamber having a processing space where a liquid processing process for a substrate is performed; a support unit that supports the substrate and is provided to be rotatable; and a processing liquid supply unit that supplies a processing liquid to the substrate. The chamber comprises: a first side having a gate door through which the substrate enters and exits; a second side provided to face the first side and having a front door provided for a maintenance work of the processing space; and an inner door provided between the second side and the first side to reduce a volume of the processing space.

Description

Substrate processing apparatus {SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus.

In general, processes for processing glass substrates or wafers in flat panel display device manufacturing or semiconductor manufacturing processes include a photoresist coating process, a developing process, an etching process, an ashing process, and the like. Various processes are performed. Each process includes a wet cleaning process using chemical or deionized water to remove various contaminants attached to the substrate and a drying process to dry the chemical or deionized water remaining on the substrate surface. ) process is performed.

In the cleaning process using such a chemical solution, since a plurality of nozzle units are configured, the volume affected by the fan filter unit is wide, and there are many areas where air flow stagnation occurs, and it is difficult to seal the chamber.

An object of the present invention is to provide a substrate processing apparatus capable of minimizing an airflow stagnant section inside a process chamber.

An object of the present invention is to provide a substrate processing apparatus capable of preventing outflow of toxic gas generated in a processing space inside a process chamber.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

According to one aspect of the present invention, a chamber having a processing space in which a liquid treatment process for a substrate is performed; a support unit that supports the substrate and is rotatably provided; including a processing liquid supply unit supplying a processing liquid to the substrate; The chamber may include a first side having a gate door through which a substrate enters and exits; A second side facing the first side and having a front door provided for maintenance of the processing space, and an inner provided between the second side and the first side to reduce the volume of the processing space. A substrate processing apparatus including a door may be provided

In addition, an exhaust unit for exhausting gas in the buffer space between the second side surface and the inner door may be further included.

In addition, the inner door may include an installation surface on which an image acquisition member for acquiring image data of a surface of a substrate placed on the support unit is installed.

Also, the installation surface may be inclined so that the image capture member faces the support unit.

In addition, the treatment liquid supply unit may include a first nozzle unit provided on one side of the support unit; Including a second nozzle unit provided on the other side relative to the support unit; The first nozzle unit and the second nozzle unit may be provided as multi-nozzles having at least two nozzle tips.

In addition, a fan filter unit providing a down flow air flow to a processing space between the first side surface and the inner door may be provided at an upper portion of the chamber.

According to one embodiment of the present invention, the internal space of the chamber is configured in a double configuration by applying the inner door, so that the outflow of toxic gas generated in the processing space to the outside can be minimized.

According to an embodiment of the present invention, it is possible to minimize the generation of particles due to stagnant airflow by improving the airflow replacement rate through the elimination of the airflow stagnant section.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a plan view schematically illustrating a substrate processing facility provided with a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view of the substrate processing apparatus of FIG. 1 .
3 is a cross-sectional view of the substrate processing apparatus of FIG. 1 .
FIG. 4 is a cross-sectional view taken along line AA indicated in FIG. 2 .
5 is a view showing the sealing structure of the support rod.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In addition, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated. Specifically, terms such as "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features or It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, the second element may also be termed a first element, without departing from the scope of the present invention.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to", etc., should be interpreted similarly.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, they are not interpreted in an ideal or excessively formal meaning. .

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

1 is a plan view schematically showing a substrate processing facility 1 of the present invention.

Referring to FIG. 1 , a substrate processing facility 1 includes an index module 1000 and a process processing module 2000 . The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process module 2000 are sequentially arranged in a line. Hereinafter, the direction in which the load port 1200, the transfer frame 1400, and the process module 2000 are arranged is referred to as the first direction 12. And when viewed from above, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. (16).

The carrier 1300 in which the substrate W is accommodated is seated in the load port 1200 . A plurality of load ports 1200 are provided, and they are arranged in a line along the second direction 14 . 1 shows that four load ports 1200 are provided. However, the number of load ports 1200 may increase or decrease according to conditions such as process efficiency and footprint of the process processing module 2000 . A slot (not shown) provided to support the edge of the substrate W is formed in the carrier 1300 . A plurality of slots are provided in the third direction 16 . The substrates W are positioned in the carrier 1300 to be stacked spaced apart from each other along the third direction 16 . A front opening unified pod (FOUP) may be used as the carrier 1300 .

The process processing module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed parallel to the first direction 12 in its longitudinal direction. Process chambers 2600 are respectively disposed on one side and the other side of the transfer chamber 2400 along the second direction 14 . The process chambers 2600 located on one side of the transfer chamber 2400 and the process chambers 2600 located on the other side of the transfer chamber 2400 are provided to be symmetrical to each other with respect to the transfer chamber 2400 . Some of the process chambers 2600 are disposed along the length direction of the transfer chamber 2400 . Also, some of the process chambers 2600 are stacked with each other. That is, on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an array of A X B (where A and B are each a natural number of 1 or more). Here, A is the number of process chambers 2600 provided in a line along the first direction 12, and B is the number of process chambers 2600 provided in a line along the third direction 16. When four or six process chambers 2600 are provided on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in a 2x2 or 3x2 arrangement. The number of process chambers 2600 may increase or decrease. Unlike the above description, the process chamber 2600 may be provided on only one side of the transfer chamber 2400 . Also, unlike the above description, the process chamber 2600 may be provided on one side and both sides of the transfer chamber 2400 in a single layer.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400 . The buffer unit 2200 provides a space where the substrate W stays between the transfer chamber 2400 and the transfer frame 1400 before the substrate W is transported. The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided to be spaced apart from each other along the third direction 16 . In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are opened.

The transfer frame 1400 transports the substrate W between the carrier 1300 seated on the load port 1200 and the buffer unit 2200 . An index rail 1420 and an index robot 1440 are provided on the transfer frame 1400 . The length direction of the index rail 1420 is parallel to the second direction 14 . The index robot 1440 is installed on the index rail 1420 and linearly moves in the second direction 14 along the index rail 1420 . The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1441 is installed to be movable along the index rail 1420 . Body 1442 is coupled to base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1441 . In addition, the body 1442 is provided to be rotatable on the base 1441. The index arm 1443 is coupled to the body 1442 and is provided to be movable forward and backward with respect to the body 1442 . A plurality of index arms 1443 are provided to be individually driven. The index arms 1443 are stacked and spaced apart from each other along the third direction 16 . Some of the index arms 1443 are used to transport the substrate W from the process module 2000 to the carrier 1300, and some of the index arms 1443 transfer the substrate W from the carrier 1300 to the process module 2000. Can be used when transporting. This can prevent particles generated from the substrate W before processing from being attached to the substrate W after processing during the process of carrying in and unloading the substrate W by the index robot 1440 .

The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600 . A guide rail 2420 and a main robot 2440 are provided in the transfer chamber 2400 . The guide rail 2420 is disposed so that its longitudinal direction is parallel to the first direction 12 . The main robot 2440 is installed on the guide rail 2420 and moves linearly along the first direction 12 on the guide rail 2420 . The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420 . Body 2442 is coupled to base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441 . In addition, the body 2442 is provided to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442, and is provided to be movable forward and backward relative to the body 2442. A plurality of main arms 2443 are provided to be individually driven. The main arms 2443 are stacked and spaced apart from each other along the third direction 16 . The main arm 2443 used to transfer the substrate W from the buffer unit 2200 to the process chamber 2600 and the main arm 2443 used to transfer the substrate W from the process chamber 2600 to the buffer unit 2200 The main arms 2443 may be different from each other.

In the process chamber 2600 , a substrate processing apparatus 10 performing a cleaning process on the substrate W is provided. The substrate processing apparatus 10 provided in each process chamber 2600 may have a different structure depending on the type of cleaning process to be performed. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups, so that the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group have the same structure and provided to the process chambers 2600 belonging to different groups. The substrate processing apparatuses 10 may have structures different from each other. For example, when the process chamber 2600 is divided into two groups, a first group of process chambers 2600 are provided on one side of the transfer chamber 2400, and a second group of process chambers 2600 are provided on the other side of the transfer chamber 2400. Process chambers 2600 may be provided. Optionally, a first group of process chambers 2600 may be provided on a lower layer on one side and the other side of the transfer chamber 2400, and a second group of process chambers 2600 may be provided on an upper layer. The first group of process chambers 2600 and the second group of process chambers 2600 may be classified according to the type of chemical used or the type of cleaning method.

In the following embodiment, an apparatus for cleaning a substrate W using processing fluids such as high-temperature sulfuric acid, an alkaline chemical solution, an acidic chemical solution, a rinsing liquid, and a dry gas will be described as an example. However, the technical spirit of the present invention is not limited thereto, and may be applied to various types of devices that perform a process while rotating the substrate W, such as an etching process.

FIG. 2 is a plan view of the substrate processing apparatus of FIG. 1 , and FIG. 3 is a cross-sectional view of the substrate processing apparatus of FIG. 1 .

2 and 3, the substrate processing apparatus 10 includes a chamber 100, a bowl 200, a support unit 300, a first nozzle unit 410, a second nozzle unit 430, a third It includes a nozzle unit 450, an exhaust unit 500, a lifting unit 600, and an inner door 700.

The chamber 100 provides a sealed inner space. A pan tilter unit 110, which is an air flow supply member, is installed on the upper part. The fan filter unit 110 forms a descending air current inside the chamber 100 .

The fan filter unit 110 filters high-humidity outside air and supplies it to the inside of the chamber 100 . The high-humidity outside air passes through the air flow supply member 110 and is supplied into the chamber 100 to form a descending air flow. The downdraft provides a uniform airflow to the top of the substrate (W), and the contaminants generated in the process of processing the surface of the substrate (W) by the treatment fluid are removed together with the air through the collection containers (210, 220, 230) of the bowl (200). through the exhaust unit 500.

The chamber 100 is divided into a process area 120 and a maintenance area 130 by a horizontal partition wall 102 . A bowl 200 and a support unit 300 are positioned in the process area 120 . In the maintenance area 130, in addition to recovery lines 241, 243, and 245 connected to the bowl 200 and the exhaust line 510, a drive unit of the lifting unit 600, a drive unit connected to the treatment liquid supply unit 410, a supply line, etc. is located Maintenance area 130 is isolated from process area 120 .

The bowl 200 has a cylindrical shape with an open top and has a processing space for processing the substrate W. The open upper surface of the bowl 200 serves as a path for transporting and transporting the substrate W. A support unit 300 is positioned in the processing space. The support unit 300 rotates the substrate W while supporting the substrate W during the process.

The bowl 200 provides a lower space to which the exhaust duct 290 is connected at the lower end so that forced exhaust is performed. In the bowl 200, first to third collection containers 210, 220, and 230 are arranged in multiple stages to introduce and suck the treatment liquid and gas scattered on the rotating substrate W.

The annular first to third collection containers 210, 220, and 230 have exhaust ports H communicating with one common annular space. Specifically, the first to third collection containers 210, 220, and 230 each include a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second collection container 220 surrounds the first collection container 210 and is spaced apart from the first collection container 210 . The third collection container 230 surrounds the second collection container 220 and is spaced apart from the second collection container 220 .

The first to third collection containers 210, 220, and 230 provide first to third collection spaces RS1, RS2, and RS3 into which airflow containing the treatment liquid and fume scattered from the substrate W flows. . The first collection space RS1 is defined by the first collection container 110, and the second collection space RS2 is defined by a separation space between the first collection container 110 and the second collection container 120, , The third recovery space RS3 is defined by the separation space between the second recovery bottle 120 and the third recovery bottle 130.

The upper surfaces of the first to third collection containers 210, 220, and 230 have central portions opened. The first to third collection containers 210, 220, and 230 are formed of inclined surfaces with a distance from the corresponding bottom surface gradually increasing from the connected sidewall toward the opening. The treatment liquid scattered from the substrate W flows into the recovery spaces RS1 , RS2 , and RS3 along the upper surfaces of the first to third recovery containers 210 , 220 , and 230 .

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 241 . The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 243 . The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 245 .

The support unit 300 supports the substrate W during the process and can rotate the substrate W during the process.

The support unit 300 includes a support plate 310 , a spin driving unit 320 , a bag nozzle unit 330 , and a heating member 340 .

The support plate 310 includes a chuck stage 312 and a quartz window 314 . The chuck stage 312 has a circular upper surface. The chuck stage 312 is coupled to the spin driving unit 320 and rotates. Chucking pins 316 are installed at the edges of the chuck stage 312 . The chucking pins 316 are provided to penetrate the quartz window 314 and protrude upward from the quartz window 314 . The chucking pins 316 align the substrate W so that the substrate W supported by the plurality of support pins 318 is placed in place. During the process, the chucking pins 316 come into contact with the side of the substrate (W) to prevent the substrate (W) from being separated from its original position.

The quartz window 314 is positioned above the substrate W and the chuck stage 210 . A quartz window 314 is provided to protect the heating element 340 . The quartz window 314 may be provided transparent. The quartz window 314 can be rotated with the chuck stage 312 . Quartz window 314 includes support pins 318 . The support pins 318 are spaced apart from each other by a predetermined distance on the edge of the upper surface of the quartz window 314 . A support pin 318 is provided to protrude upward from the quartz window 314 . The support pins 318 support the lower surface of the substrate W so that the substrate W is supported while being spaced apart from the quartz window 314 in an upward direction.

The spin driver 320 has a hollow shape and is coupled with the chuck stage 312 to rotate the chuck stage 312 . When the chuck stage 312 is rotated, the quartz window 314 can be rotated with the chuck stage 312 . Also, components provided within the support plate 310 may be positioned independently of rotation of the support plate 310 . For example, the heating member 340 to be described below may be positioned independently of rotation of the support plate 310 .

The back nozzle unit 330 is provided to spray the rinse liquid DIW to the rear surface of the substrate W. The back nozzle part 330 includes a nozzle body 332 and a back nozzle spraying part 334 . The back nozzle injection unit 334 is located at the upper center of the chuck stage 312 and the quartz window 314 . The nozzle body 332 is installed through the hollow spin driving unit 320, and a rinse liquid moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 332.

The heating member 340 may heat the substrate W during the process. The heating element 340 is disposed within the support plate 310 . The heating member 340 may include a lamp 342 .

The heating member 340 is installed above the chuck stage 312 . The heating member 340 may be provided in a ring shape. A plurality of heating members 340 may be provided. The heating member 340 may be provided with different diameters. The temperature of each heating element 340 can be individually controlled. The heating member 340 may be a lamp 342 emitting light. The lamp 342 may be a lamp 342 emitting light having a wavelength in the infrared region. The lamp 342 may be an infrared lamp 342 (IR Lamp). The lamp 342 may heat the substrate W by radiating infrared rays.

The heating element 340 can be subdivided into a number of concentric zones. Each zone may be provided with lamps 342 capable of individually heating each zone. The ramps 342 may be provided in a ring shape concentrically arranged at different radial distances to the center of the chuck stage 312 . At this time, the number of lamps 342 may be increased or decreased depending on the desired degree of temperature control. The heating member 340 may continuously increase or decrease the temperature according to the radius of the substrate W during the process by controlling the temperature of each individual zone.

The support unit 300 may further include a cooling member (not shown), an insulation board (not shown), and a heat sink (not shown). The cooling member may be disposed in the support plate 310 to supply a cooling fluid to the support plate 310 . For example, the cooling member may supply cooling fluid to a flow path formed in the heat dissipation plate.

An insulating plate may be disposed within the support plate 310 . In addition, the insulating plate may be disposed below the heating member 340 within the support plate 310 . The insulating board may be provided with a transparent material. The insulating plate is made of a transparent material so that light emitted from the heating member 340 can pass through the insulating plate. In addition, the insulation board may be provided with a material having low thermal conductivity. For example, the heat sink may be made of a material having lower thermal conductivity than the heat sink. For example, the insulating board may be made of a material including glass. The insulating board may be provided with a material containing Neoceram. The insulating board may be provided with a material including glass ceramic. However, it is not limited thereto, and the insulating board may be provided with a material including ceramic.

The reflector may be disposed within the support plate 310 . In addition, the reflector may be disposed below the insulating plate in the support plate 310 . The reflector may be made of a material that reflects light emitted from the heating member 340 . The reflector may be made of a material that reflects light having a wavelength in the infrared region. The reflector may be made of a material containing metal. The reflector may be provided with a material containing aluminum. The reflector may be provided with a material including silver-plated aluminum having a surface plated with silver (Ag).

The heat dissipation plate may dissipate heat transferred from the insulator to the outside. In addition, a flow path through which a cooling fluid supplied by the cooling member flows may be formed in the heat dissipation plate. A heat spreader may be disposed within the support plate 310 . Also, the heat spreader may be disposed below the reflector in the support plate. The heat sink may be made of a material having high thermal conductivity. For example, the heat dissipation plate may be provided with a material having higher thermal conductivity than the aforementioned insulator plate. The heat sink may be made of a material including metal. The heat sink may be made of a material including aluminum and/or silver.

The first nozzle unit 410 , the second nozzle unit 430 , and the third nozzle unit 430 may process the substrate W by supplying a processing fluid to the substrate W according to a process. Here, the processing fluid may include chemicals, pure water, processing gas, inert gas, and the like.

The first nozzle unit 410 may include a first nozzle tip 411 , a nozzle arm 413 , a support rod 415 , and a nozzle driver 417 . The first nozzle tip 411 receives the treatment liquid through the supply unit 420 . A plurality of first nozzle tips 411 may be provided. In this embodiment, four nozzle tips are disclosed, but are not limited thereto. Each of the first nozzle tips 411 may discharge the same processing fluid or different processing fluids to the surface of the substrate W. The nozzle arm 413 is an arm provided long in one direction, and a first nozzle tip 411 is mounted at the front end. The nozzle arm 413 supports the first nozzle tips 411 . A support rod 415 is mounted at the rear end of the nozzle arm 413 . The support rod 415 is located below the nozzle arm 413 . The support rod 415 is disposed perpendicular to the nozzle arm 413 . A nozzle driver 417 is provided at the lower end of the support rod 415 . The nozzle driver 417 rotates the support rod 415 about the longitudinal axis of the support rod 415 . As the support rod 415 rotates, the nozzle arm 413 and the first nozzle tip 411 swing about the support rod 415 . The first nozzle tip 411 may swing between the outside and the inside of the bowl 200 . Also, the first nozzle tip 411 may discharge the processing fluid while swinging in a section between the center and the edge of the substrate W.

The second nozzle unit 430 may include a second nozzle tip 431 , a nozzle arm 433 , a support rod 435 , and a nozzle actuator 437 . In this embodiment, the second nozzle unit 430 is illustrated as having two nozzle arms 433, but is not limited thereto. The second nozzle tip 431 receives the treatment fluid through the supply unit 440 . The second nozzle tip 431 discharges the processing fluid to the surface of the substrate W. The nozzle arm 433 is an arm that has a long length in one direction, and a second nozzle tip 431 is mounted at the front end. The nozzle arm 433 supports the second nozzle tip 431 . A support rod 435 is mounted at the rear end of the nozzle arm 433 . The support rod 435 is positioned below the nozzle arm 433 . The support rod 435 is disposed perpendicular to the nozzle arm 433 . A nozzle driver 437 is provided at the lower end of the support rod 435 . The nozzle driver 437 rotates the support rod 435 about the longitudinal axis of the support rod 435 . As the support rod 435 rotates, the nozzle arm 433 and the second nozzle tip 431 swing about the support rod 435 . The second nozzle tip 431 may swing between the outside and the inside of the bowl 200 . Meanwhile, a description of the third nozzle unit 450 is similar to the aforementioned first and second nozzle units, and a detailed description thereof will be omitted.

As described above, the present invention secures a spare space in the chamber by simplifying the nozzle unit, which was composed of six in the existing chamber, into three nozzle units by applying a multi-nozzle tip structure. In addition, as shown in FIG. 5, the seal 416 was applied through structural improvement in the up-down and rotational directions of the support rod 415, thereby securing the sealing performance at the corresponding part.

The exhaust unit 500 may exhaust the inside of the bowl 100 . For example, the exhaust unit 500 provides exhaust pressure (suction pressure) to the recovery cylinders for recovering the treatment liquid among the first to third recovery cylinders 210, 220, and 230 during the process. The exhaust unit 500 includes an exhaust line 510 connected to the exhaust duct 290 and a damper 520 . The exhaust line 510 receives exhaust pressure from an exhaust pump (not shown) and is connected to a main exhaust line buried in a floor space of a semiconductor production line.

Meanwhile, the bowl 200 is combined with the lifting unit 600 that changes the vertical position of the bowl 200 . The lifting unit 600 linearly moves the bowl 200 in the vertical direction. As the bowl 200 moves up and down, the height of the bowl 200 relative to the support unit 300 is changed.

The lifting unit 600 includes a bracket 612, a moving shaft 614, and an actuator 616. The bracket 612 is fixedly installed on the outer wall of the processing container 100 . The bracket 612 is fixedly coupled to a moving shaft 614 moved in a vertical direction by an actuator 616. When the substrate W is loaded or unloaded from the support unit 300, the support unit 300 protrudes upward from the support unit 300, and the support unit 200 descends. In addition, when the process is in progress, the height of the bowl 200 is adjusted so that the treatment liquid can flow into the collection containers 210, 220, and 230 set in advance according to the type of the treatment liquid supplied to the substrate W. The bowl 200 may have different types of treatment liquid and pollutant gas recovered for each of the recovery spaces RS1, RS2, and RS3.

FIG. 4 is a cross-sectional view taken along line A-A shown in FIG. 2 . In FIG. 4 , nozzle units are omitted for convenience of drawing.

Referring to FIG. 4 , the chamber 100 may include a first side surface 104 and a second side surface 106 . The first side 104 and the second side 106 may be disposed to face each other. The first side surface 104 has a gate door 105 through which a substrate enters and exits. The second side 106 is provided with a front door 107 for maintenance work inside the chamber.

The inner door 700 is provided between the second side surface 106 and the first side surface 104 . The processing space can be reduced in volume by the inner door 700 . The present invention simplifies the interior of the chamber with three nozzle units 410 , 430 , and 450 to reduce the volume of the existing process zone, thereby securing an installation space for the inner door 700 . The inner door 700 may be provided to open and close.

The inner door 700 is disposed at a predetermined distance from the front door 107, and sealing performance can be implemented by fastening with an O-ring and bolting. Meanwhile, exhaust pressure may be provided to the buffer space 790 between the second side surface 106 and the inner door 700 . Exhaust pressure is provided through an exhaust port 710 formed on the bottom surface of the buffer space 790 . An exhaust line 510 connected to the aforementioned exhaust duct 290 may be connected to the exhaust port 710 . As described above, the sealing performance of the chamber 100 may be secured by exhausting the buffer space 790 .

On the other hand, the inner door 700 has an installation surface 702 on the top. An image acquisition member 730 is installed on the installation surface 702 to obtain image data for the surface of the substrate placed on the support unit. The installation surface 702 may be inclined so that the image acquisition member 730 faces the support unit.

The image acquisition member 730 is provided as, for example, a camera, an image sensor, etc., and is fixedly installed on the upper side of the support unit 300 . For example, as shown in FIG. 4 , the image acquiring member 730 acquires image data including the entire area of the substrate W loaded on the support unit 300 . When the image acquisition member 730 is fixedly installed on the installation surface 702 inclined at the top of the inner door 700, there is no interference with other peripheral devices (not shown) disposed above the substrate processing apparatus. Image data can be acquired. Such image data (IMAGE) may be provided to a vision processor (not shown).

It should be understood that the above embodiments are presented to aid understanding of the present invention, do not limit the scope of the present invention, and various deformable embodiments also fall within the scope of the present invention. The scope of technical protection of the present invention should be determined by the technical spirit of the claims, and the scope of technical protection of the present invention is not limited to the literal description of the claims themselves, but is substantially equal to the scope of technical value. It should be understood that it extends to the invention of.

100: chamber
200: Paul
300: support unit
700: inner door

Claims (6)

In the device for processing the substrate,
a chamber having a processing space in which a liquid treatment process for a substrate is performed;
a support unit that supports the substrate and is rotatably provided;
including a processing liquid supply unit supplying a processing liquid to the substrate;
the chamber
a first side surface having a gate door through which a substrate enters and exits;
A second side facing the first side and having a front door provided for maintenance of the processing space, and an inner provided between the second side and the first side to reduce the volume of the processing space. A substrate processing apparatus including a door. According to claim 1,
The substrate processing apparatus further comprises an exhaust unit for exhausting gas in the buffer space between the second side surface and the inner door. According to claim 2,
The inner door includes an installation surface on which an image acquisition member for obtaining image data of a surface of the substrate placed on the support unit is installed. According to claim 3,
The installation surface is provided to be inclined so that the image acquisition member faces the support unit. According to claim 2,
The treatment liquid supply unit
a first nozzle unit provided on one side of the support unit;
Including a second nozzle unit provided on the other side relative to the support unit;
The first nozzle unit and the second nozzle unit
A substrate processing apparatus provided as a multi-nozzle having at least two nozzle tips. According to claim 2,
A substrate processing apparatus provided at an upper portion of the chamber with a fan filter unit providing a downflow airflow to a processing space between the first side surface and the inner door.

Images