JP2022048552A - Semiconductor device - Google Patents

Abstract

To provide a semiconductor device in which occurrence of electric discharge is prevented.SOLUTION: A semiconductor device 10 includes a case including a housing part 41 and a stationary part 45. The housing part 41 forms a formwork including an upper opening 42a and a lower opening 43a (housing region) which penetrate from a front side (housing front side) to a back side (housing back side) and are opened, the housing part housing an insulation circuit board 20 in the lower opening 43a. The stationary part 45 is integrally formed on a part of an outside wall part of the housing part 41 in plan view, has a through hole 45a formed therein, the through hole penetrating from a front surface (stationary front surface) to a back surface (stationary back surface) in a same direction as the lower opening 43a, and includes a conductive member 47 which penetrates from the outside wall part to a lower inner wall surface 43b, and one end of which contacts a metal base substrate 23 while the other end of which is arranged on the front surface side of the through hole 45a.SELECTED DRAWING: Figure 3

Description

The present invention relates to a semiconductor device.

The semiconductor device includes a power device and is used as a power conversion device. The power device includes, for example, a semiconductor chip of an IGBT (Insulated Gate Bipolar Transistor) and a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Such a semiconductor device includes at least a semiconductor chip and an insulating circuit board on which the semiconductor chip is arranged. The insulating circuit board includes an insulating plate, a predetermined circuit pattern formed on the insulating plate, and a metal plate formed on the back surface of the insulating plate. Further, the semiconductor device includes a metal substrate on which an insulating circuit board on which a semiconductor chip is arranged is placed, a case provided on the substrate so as to cover the semiconductor chip and the insulating circuit board, and a seal that seals the inside of the case. Including a stop member. At this time, a screw screwed into a heat sink arranged on the back surface of the substrate is inserted in the case (see, for example, Patent Document 1).

Another semiconductor device may include a control board for controlling the semiconductor chip, which faces and is separated from the insulating circuit board. In this case, in order to shield the electromagnetic waves from the outside to the control board, the electromagnetic shielding plate provided on the back surface of the control board is electrically connected to the metal plate on the back surface of the electromagnetic shielding plate and the insulating circuit board. A body and a case are provided (see, for example, Patent Document 2).

Further, in another semiconductor device, the semiconductor chip and the insulating circuit board may be housed in a case, the back surface of the metal plate of the insulating circuit board may be exposed, and the inside of the case may be sealed with a sealing member. A screw hole is formed in the case. A heat sink can be attached to a semiconductor device by screwing a screw inserted into a screw hole into a heat sink arranged on the back surface of such a semiconductor device. In such a semiconductor device, a conductive connecting member for connecting the metal plate and the screw hole is provided in the case. Therefore, the metal plate is electrically connected to the heat sink via the connecting member and the screw. Therefore, it is possible to suppress the occurrence of partial discharge of the semiconductor device (see, for example, Patent Document 3).

By the way, in a semiconductor device, a resin layer may be used as an insulating plate of an insulating circuit board, a conductive foil-shaped circuit pattern may be used on the front surface of the resin layer, and a conductor plate may be used on the back surface of the resin layer. In such a semiconductor device, the semiconductor chip and the insulating circuit board are housed in a case, and the back surface of the conductor plate of the insulating circuit board is exposed on the back surface of the case. A heat sink is arranged on the back surface of the semiconductor device via an insulating heat-dissipating grease, and the heat sink is screwed into the case with screws. In this way, the heat sink is attached to the back surface of the semiconductor device.

Japanese Unexamined Patent Publication No. 2010-28299 Japanese Unexamined Patent Publication No. 2002-07265 Japanese Unexamined Patent Publication No. 2020-089766

As described above, in a semiconductor device in which a resin layer is used as an insulating plate of an insulating circuit board, a conductive foil-like circuit pattern is used on the front surface of the resin layer, and a conductor plate is used on the back surface of the resin layer, a semiconductor chip and a semiconductor chip and The insulating circuit board is housed in the case, and the back surface of the conductor plate is exposed on the back surface of the case. A heat sink is arranged on the back surface of the semiconductor device via an insulating heat-dissipating grease, and the heat sink is screwed into the case with screws. In this way, the heat sink is attached to the back surface of the semiconductor device. At this time, the conductor plate is surrounded by the resin layer, the case, and the heat-dissipating grease, resulting in a floating potential. In such a semiconductor device, the thermal paste is pumped out in response to the occurrence of warpage due to a temperature change, and a space may be created in the thermal paste due to drying due to volatilization of low molecular weight components due to long-term use. When a space is created in this way, a discharge according to Paschen's law may occur. When an electric discharge occurs, an opening may be generated in the conductor plate and the heat sink due to a spatter phenomenon. Further, if the noise due to the discharge increases, it affects the gate drive voltage, and there is a concern that it may lead to a malfunction of the semiconductor device.

The present invention has been made in view of such a point, and an object of the present invention is to provide a semiconductor device in which the generation of electric discharge is prevented.

According to one aspect of the present invention, the semiconductor chip is formed on the front surface of the insulating resin layer and the insulating resin layer, and is formed on the circuit pattern on which the semiconductor chip is arranged and the back surface of the insulating resin layer. An insulating circuit board including a metal plate, a frame type having a storage area opened through the storage front surface to the storage back surface, and a storage unit for storing the insulating circuit board in the storage area. A through hole is formed integrally with a part of the outer wall portion of the storage portion in a plan view and penetrates from the fixed front surface to the fixed back surface in the same direction as the storage region, and the outer wall portion is described as described above. A case that penetrates the storage area, one end of which is in contact with the metal plate, and the other end of which includes a fixing portion including a conductive member arranged on the fixing front surface side of the through hole. Provided is a semiconductor device having.

The semiconductor device having the above configuration can prevent the generation of electric discharge and suppress the deterioration of reliability.

It is a figure for demonstrating the semiconductor device of 1st Embodiment. It is sectional drawing (the 1) of the semiconductor device of 1st Embodiment. It is sectional drawing (the 2) of the semiconductor device of 1st Embodiment. It is sectional drawing of the main part of the semiconductor device of 1st Embodiment. It is a figure for demonstrating the conductive member of the semiconductor device of 1st Embodiment. It is sectional drawing of the semiconductor device which attached the heat sink of 1st Embodiment. It is sectional drawing of the semiconductor device which attached the heat sink of a reference example. It is a figure for demonstrating the case of the semiconductor device of 2nd Embodiment. It is a figure for demonstrating the resin filled in the mold in the manufacturing method of the case included in the semiconductor device of 2nd Embodiment. It is a figure for demonstrating the case which removed the mold in the manufacturing method of the case included in the semiconductor device of 2nd Embodiment. It is sectional drawing of the main part of the semiconductor device of 2nd Embodiment. It is a figure for demonstrating the resin filled in the mold in the manufacturing method of the case included in the semiconductor device of a reference example. It is sectional drawing of the main part of the semiconductor device of the modification of the 2nd Embodiment. It is sectional drawing of the semiconductor device which attached the heat sink of 3rd Embodiment. It is sectional drawing of the main part of the semiconductor device of 3rd Embodiment. It is a figure for demonstrating the manufacturing process of the case included in the semiconductor device of 3rd Embodiment.

Hereinafter, embodiments will be described with reference to the drawings. In the present embodiment, the front surface (upper side) represents the surface (direction) in which the semiconductor device 10 of FIG. 2 faces upward. For example, in the insulating circuit board 20, the surface (mounted side) on which the semiconductor chips 31 and 32 are mounted is the front surface (upper side). The back surface (lower side) represents a surface (direction) facing downward in the semiconductor device 10 of FIG. For example, in the insulating circuit board 20, the surface (mounted side) to which the metal base substrate 23 is joined is the back surface (lower side). In addition to FIG. 2, the front surface (upper side) and the back surface (lower side) mean the same direction.

[First Embodiment]
The semiconductor device of the first embodiment will be described with reference to FIGS. 1 to 4. FIG. 1 is a diagram for explaining the semiconductor device of the first embodiment, and FIGS. 2 and 3 are cross-sectional views of the semiconductor device of the first embodiment. FIG. 4 is a cross-sectional view of a main part of the semiconductor device according to the first embodiment. 2 is a cross-sectional view taken along the alternate long and short dash line X1-X1 of FIG. 1, and FIG. 3 is a cross-sectional view taken along the alternate long and short dash line X2-X2 of FIG. Further, FIG. 4 shows an enlarged view of the fixed portion 45 on the right side of FIG.

The semiconductor device 10 includes an insulating circuit board 20, semiconductor chips 31, 32, a case 40 for accommodating them, and a sealing member 51 for sealing the inside of the case 40. The insulating circuit board 20 has a circuit pattern 21a, 21b, an insulating resin layer 22 on which the circuit patterns 21a, 21b are arranged on the front surface, and a metal base substrate 23 on which the insulating resin layer 22 is arranged on the front surface. ing.

The circuit patterns 21a and 21b are made of a material having excellent conductivity. Such a material is made of, for example, copper, aluminum, or an alloy containing at least one of these. The thickness of the circuit patterns 21a and 21b is preferably 0.10 mm or more and 2.00 mm or less, and more preferably 0.20 mm or more and 1.00 mm or less. Semiconductor chips 31 and 32 are joined to the circuit pattern 21a via solder. In addition to the semiconductor chips 31 and 32, wiring members such as bonding wires, lead frames and connection terminals, and electronic components may be appropriately arranged on the circuit patterns 21a and 21b, if necessary. It is also possible to perform plating on such circuit patterns 21a and 21b with a material having excellent corrosion resistance. Such materials may be, for example, aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, silver, platinum, palladium, or alloys containing at least one of these. And so on. The number, arrangement position, and shape of the circuit patterns 21a and 21b shown in FIGS. 2 and 3 are examples, and the number, arrangement position, and shape can be appropriately selected by design.

The insulating resin layer 22 is made of a resin having low thermal resistance and high insulating properties. Such a resin is, for example, a thermosetting resin. The thermosetting resin may contain a thermally conductive filler. As a result, the thermal resistance of the insulating resin layer 22 can be further reduced, and the difference in the coefficient of thermal expansion from the metal base substrate 23 can be reduced. Such thermosetting resins include, for example, epoxy resins, cyanate resins, polyimide resins, benzoxazine resins, unsaturated polyester resins, phenol resins, melamine resins, silicone resins, maleimide resins, acrylic resins, and polyamide (PA) resins. At least one of them can be mentioned. The thermally conductive filler is composed of at least one of an oxide and a nitride. The oxide is, for example, silicon oxide or aluminum oxide, and the nitride is, for example, silicon nitride, aluminum nitride, or boron nitride. Further, hexagonal boron nitride may be used as the thermally conductive filler. The thickness of such an insulating resin layer 22 depends on the rated voltage of the semiconductor device 10. That is, it is desired that the thickness of the insulating resin layer 22 is increased as the rated voltage of the semiconductor device 10 is higher. On the other hand, it is also desired to make the insulating resin layer 22 as thin as possible to reduce the thermal resistance. The thickness of such an insulating resin layer 22 is, for example, 0.05 mm or more and 0.50 mm or less.

The metal base substrate 23 is made of a metal having excellent thermal conductivity. Examples of this metal include aluminum, iron, silver, copper, or alloys containing at least one of these. As an example of the alloy in this case, a metal composite material such as aluminum-silicon nitride (Al-SiC) or magnesium-silicon nitride (Mg-SiC) may be used. Further, in order to improve the corrosion resistance, for example, a plating film may be formed on the surface of the metal base substrate 23 by a plating treatment. Examples of the material of the plating film include nickel, nickel-phosphorus alloy, and nickel-boron alloy. The thickness of the plating film is preferably 1 μm or more, more preferably 5 μm or more. Further, the cooling unit in this case is made of, for example, a metal having excellent thermal conductivity. The metal is aluminum, iron, silver, copper, or an alloy containing at least one of these. Further, the cooling unit is a heat sink provided with one or more fins, a water-cooled cooling device, or the like. Further, the metal base substrate 23 may be integrated with such a cooling unit. In that case, it is composed of aluminum, iron, silver, copper, or an alloy containing at least one of these, which has excellent thermal conductivity. Then, in order to improve the corrosion resistance, a plating film may be formed on the surface of the metal base substrate 23 integrated with the cooling unit by a plating treatment. Examples of the material of the plating film include nickel, nickel-phosphorus alloy, and nickel-boron alloy. The thickness of the metal base substrate 23 is preferably 2 mm or more and 5 mm or less.

The insulating circuit board 20 composed of the above components is formed, for example, as follows. First, the metal base substrate 23, the insulating resin layer 22, and the conductive plate including the circuit patterns 21a and 21b are laminated in order, and the respective are crimped by heating and pressurizing in the stacking direction. Such crimping is performed in an activated gas atmosphere or in vacuum. After that, the conductive plate is aligned with a predetermined pattern, masked with a photosensitive resist mask, a pattern is formed by etching, and the photosensitive resist mask is removed to form circuit patterns 21a and 21b. The insulated circuit board 20 can be obtained by disassembling what is formed in this way.

The semiconductor chips 31 and 32 are power devices composed of silicon, silicon carbide, or gallium nitride. The semiconductor chip 31 includes a switching element. The switching element is a power MOSFET, an IGBT, or the like. In such a semiconductor chip 31, for example, a drain electrode (positive electrode, collector electrode in an IGBT) is used as a main electrode on the back surface, and a gate electrode (control electrode) and a source electrode (negative electrode) are used as main electrodes on the front surface. In the IGBT, each has an emitter electrode). Further, the semiconductor chip 32 includes a diode element. The diode element is an FWD (Free Wheeling Diode) such as an SBD (Schottky Barrier Diode) or a PiN (P-intrinsic-N) diode. Such a semiconductor chip 32 has a cathode electrode as a main electrode on the back surface and an anode electrode as a main electrode on the front surface.

The back surfaces of the semiconductor chips 31 and 32 are joined to a predetermined circuit pattern 21a by soldering (not shown). The solder is composed of lead-free solder containing a predetermined alloy as a main component. The predetermined alloy is, for example, at least one of tin-silver-copper alloy, tin-zinc-bismuth alloy, tin-copper alloy, tin-silver-indium-bismus alloy, and tin-antimon. Either alloy. The solder may contain additives. Additives are, for example, nickel, germanium, cobalt or silicon. In addition, instead of soldering, it may be joined by sintering using a sintering material. The sintered material in this case is, for example, powder of silver, iron, copper, gold, platinum, aluminum, titanium, nickel, tungsten, and molybdenum. The thicknesses of the semiconductor chips 31 and 32 are, for example, 80 μm or more and 500 μm or less, and the average is about 200 μm. Further, instead of the semiconductor chips 31 and 32, a semiconductor chip including an RC-IGBT switching element in which the IGBT and the FWD are configured in one chip may be arranged. The case where a set of semiconductor chips 31 and 32 are arranged on the insulating circuit board 20 shown in FIG. 2 is illustrated. Not limited to this example, a plurality of sets may be arranged by appropriate design.

The bonding wire 33 appropriately electrically connects between the semiconductor chips 31 and 32 and the circuit patterns 21a and 21b, between the semiconductor chips 31 and 32, and between the circuit patterns 21a and 21b and the lead terminal 44. Such a bonding wire 33 is made of a material having excellent conductivity. The material is, for example, gold, silver, copper, aluminum, or an alloy containing at least one of these. The diameter of the bonding wire 33 is, for example, 110 μm or more and 500 μm or less. In FIG. 2, the bonding wire 33 is used between the circuit pattern 21a and the lead terminal 44 described later, between the semiconductor chips 31 and 32, between the semiconductor chip 32 and the circuit pattern 21b, and between the circuit pattern 21b and the lead terminal 44. The case where it is electrically connected is shown. As a result, the semiconductor chips 31 and 32 are electrically connected to the lead terminal 44 via the circuit patterns 21a and 21b and the bonding wire 33. Further, the electrical connection between the circuit patterns 21a and 21b and the lead terminal 44 is not limited to the bonding wire 33, and a lead frame may be used. Alternatively, one end of the lead terminal 44 in the case 40 may be extended and directly connected to the circuit patterns 21a and 21b.

The case 40 includes a storage portion 41 and a fixing portion 45 integrally formed on a part of the outer wall portion of the storage portion 41 in a plan view. The storage portion 41 forms a frame shape including an upper opening 42a and a lower opening 43a (storage area) that are opened from the front surface (storage front surface) to the back surface (storage back surface). There is. The upper opening 42a is a rectangular parallelepiped opening having a depth of about three-fifths of the height of the storage portion 41 from the front surface of the storage portion 41. Further, the upper opening 42a communicates with the lower opening 43a. The upper opening 42a is surrounded by the facing upper inner wall surface 42b in the lateral direction and the facing upper inner wall surface 42c in the longitudinal direction in a plan view. A protrusion 42d projects from the lower end of the upper inner wall surface 42b facing the upper opening 42a toward the center of the upper opening 42a. The protruding portion 42d has a rectangular shape in a plan view along the width of the upper inner wall surface 42b, although not shown. The front surface of the protruding portion 42d is the stepped portion 42e, and the back surface is the protruding back surface 42f.

The lower opening 43a is a rectangular parallelepiped opening having a depth of about two-fifths of the height of the storage portion 41 from the back surface of the storage portion 41 (corresponding to the protrusion from the back surface of the storage portion 41 to the protruding back surface 42f). be. The lower opening 43a is surrounded by the facing lower inner wall surface 43b in the lateral direction and the facing lower inner wall surface 43c in the longitudinal direction in a plan view. Further, the area of the lower opening 43a is smaller than that of the upper opening 42a in a plan view, and corresponds to the area of the insulating circuit board 20. The lower opening 43a communicates with the upper opening 42a via the space between the facing protrusions 42d. An insulating circuit board 20 in which semiconductor chips 31 and 32 are arranged is provided for such a lower opening 43a. The side peripheral surfaces of the insulating circuit board 20 are fixed to the lower inner wall surfaces 43b and 43c of the lower opening 43a by the adhesive member 52, respectively. The thickness of the adhesive member 52 depends on the gap G between the insulating circuit board 20 and the lower inner wall surfaces 43b and 43c (see FIG. 4). The gap G is, for example, 500 μm or more and 1 mm or less. As the adhesive member 52, for example, a thermosetting resin-based adhesive member or an organic-based adhesive member is used. The thermosetting resin-based adhesive member contains, for example, an epoxy resin or a phenol resin as a main component. The organic adhesive member is, for example, an elastomer adhesive containing silicone rubber or chloroprene rubber as a main component. Further, the circuit patterns 21a and 21b of the insulating circuit board 20 and the semiconductor chips 31 and 32 are located between the protrusions 42d. Further, the back surface of the metal base substrate 23 of the insulating circuit board 20 is flush with the back surface of the storage portion 41.

Further, the lead terminal 44 is integrally molded in the storage portion 41. As shown in FIG. 2, the lead terminal 44 has an L-shape when viewed from the side. Four lead terminals 44 are embedded in two places on the back surface of the upper inner wall surface 42b of the storage portion 41. One end of the lead terminal 44 extends upward from the front surface of the storage portion 41. The other end of the lead terminal 44 is exposed from the step portion 42e. Such a lead terminal 44 is made of a material having excellent conductivity. Such materials include, for example, copper, aluminum, or alloys containing at least one of these. The thickness of the lead terminal 44 is preferably 1.00 mm or more and 2.00 mm or less, and more preferably 1.20 mm or more and 1.50 mm or less. The bonding wire 33 is electrically and mechanically connected to the other end exposed from the step portion 42e of the lead terminal 44. The surface of the lead terminal 44 can also be plated with a material having excellent corrosion resistance to form a plating film. Such materials may be, for example, aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, silver, platinum, palladium, or alloys containing at least one of these. Can be mentioned.

The inside of the upper opening 42a of the storage portion 41 and the front surface side of the insulating circuit board 20 are sealed by the sealing member 51. The sealing member 51 contains a thermosetting resin and a filler contained in the thermosetting resin. The thermosetting resin is, for example, an epoxy resin, a phenol resin, a maleimide resin, or a polyester resin. As an example of the sealing member 51, there is an epoxy resin, and the epoxy resin contains a filler as a filler. The filler is, for example, silicon oxide, aluminum oxide, boron nitride or aluminum nitride. Alternatively, the sealing member 51 may use a thermoplastic resin. Examples of the thermoplastic resin include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, PA resin, and acrylonitrile butadiene styrene (ABS) resin.

In order to seal the inside of the case 40 with such a sealing member 51, the sealed member 51 in a molten state is injected into the case 40. At this time, in order to maintain the viscosity of the sealing member 51 in the molten state, the sealing member 51, the case 40, and the semiconductor chips 31 and 32 are heated so as to maintain a predetermined temperature. Further, by injecting the sealing member 51 in a vacuum, the sealing member 51 spreads to every corner of the case 40 without generating voids. Further, such a sealing member 51 is defoamed to remove voids in a vacuum before being injected. After the defoaming, the sealed member 51 in a molten state is stirred in a vacuum to completely defoam, so that the generation of further voids can be suppressed. Alternatively, by applying ultrasonic vibration to the case 40, the insulating circuit board 20, and the like when the sealing member 51 in the molten state is injected, it is possible to more reliably suppress the generation of voids in the sealing member 51.

The fixing portion 45 is a part of the outer wall portion of the storage portion 41, and is integrally formed at each of the four corner portions. The formation position of the fixed portion 45 with respect to the storage portion 41 is not limited to this case. The fixing portion 45 may be a part of the outer wall portion of the storage portion 41 and may be fixed to a heat sink described later. The back surface (fixed back surface) of the fixed portion 45 is flush with the back surface of the storage portion 41. The fixing portion 45 is formed with through holes 45a penetrating from the front surface (fixed front surface) to the back surface. The through hole 45a penetrates in the same direction as the upper opening 42a and the lower opening 43a. Further, the sleeve portion 46 is fitted in the through hole 45a. The sleeve portion 46 includes a cylindrical body portion and flanges formed along the openings at both ends of the body portion. The diameter of the sleeve portion 46 corresponds to the diameter of the through hole 45a. Further, the sleeve portion 46 has end portions (flange) exposed from the openings at both ends of the through hole 45a. The sleeve portion 46 is made of a material having excellent conductivity. Such a material is made of, for example, copper, aluminum, or an alloy containing at least one of these. It is also possible to form a plating film by plating the surface of the sleeve portion 46 with a material having excellent corrosion resistance. Such materials may be, for example, aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, silver, platinum, palladium, or alloys containing at least one of these. Can be mentioned. Such a sleeve portion 46 facilitates insertion of the screw 71, which will be described later, into the through hole 45a.

Further, the accommodating portion 41 and the fixing portion 45 are further provided with a conductive member 47. As shown in FIG. 4, the conductive member 47 is integrally molded on the front surface side of the fixing portion 45, and penetrates from the outer wall portion of the storage portion 41 to the lower opening portion 43a. One end of the conductive member 47 penetrates and contacts the metal base substrate 23 of the insulating circuit board 20 through the adhesive member 52, and the other end is arranged on the front surface side of the through hole 45a of the fixing portion 45. At this time, one end of the conductive member 47 (the wiring portion 47b included in the conductive member 47) penetrates the adhesive member 52 and comes into contact with the metal base substrate 23 in a state of being bent toward the storage portion 41. The conductive member 47 is made of a material having excellent conductivity. Such materials include, for example, copper, aluminum, or alloys containing at least one of these. It is also possible to form a plating film by plating the surface of such a conductive member 47 with a material having excellent corrosion resistance. Such materials may be, for example, aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, silver, platinum, palladium, or alloys containing at least one of these. Can be mentioned. Details of the conductive member 47 will be described later.

Such a case 40 is manufactured by the following injection molding. First, the lead terminal 44, the sleeve portion 46, and the conductive member 47 are set in a mold corresponding to the shapes of the storage portion 41 and the fixing portion 45. Next, while heating the mold, the molten thermoplastic resin is filled in the mold. Examples of the resin used in this case include PPS resin, PBT resin, PBS resin, PA resin, and ABS resin. After filling the thermoplastic resin, the pressure is adjusted and applied to the thermoplastic resin to cool the thermoplastic resin. After cooling, the molded product is taken out from the mold to obtain a molded case 40.

Next, the conductive member 47 will be described with reference to FIG. FIG. 5 is a diagram for explaining a conductive member of the semiconductor device according to the first embodiment. 5 (A) shows a perspective view of the conductive member 47 with respect to the sleeve portion 46, and FIG. 5 (B) shows an enlarged view of the fixed portion 45 in FIG. Further, in FIG. 5B, only the case 40 is shown.

The conductive member 47 includes a washer portion 47a and a wiring portion 47b. The washer portion 47a has a shape corresponding to the flange of the sleeve portion 46 and the opening of the through hole 45a. The washer portion 47a, that is, forms an annular shape. The wiring portion 47b extends in one direction, and the other end thereof is connected to the washer portion 47a. The wiring portion 47b is integrally formed with the washer portion 47a. Further, such a conductive member 47 has a uniform overall thickness. The thickness is, for example, 0.1 mm or more and 0.5 mm or less.

As shown in FIG. 5B, such a conductive member 47 is integrally molded with the fixing portion 45 so that the washer portion 47a is arranged on the flange of the sleeve portion 46. The wiring portion 47b extends from the washer portion 47a toward the lower opening portion 43a. The wiring portion 47b extends the front surface of the fixing portion 45 to the outer wall portion of the storage portion 41. The wiring portion 47b penetrates the lower inner wall surface 43b from the outer wall portion of the storage portion 41, and the tip portion protrudes into the lower opening portion 43a. The protrusion length S at this time is, for example, 1.1 mm or more and 1.5 mm or less, although it depends on the gap G.

Therefore, the insulating circuit board 20 is attached to the lower opening 43a of the case 40 where the wiring portion 47b of the conductive member 47 projects from the lower opening 43a from the back surface side of the case 40 via the adhesive member 52. At this time, the portion of the conductive member 47 protruding from the lower opening 43a of the wiring portion 47b is pushed toward the storage portion 41 by the insulating circuit board 20. Therefore, as shown in FIG. 4, one end of the wiring portion 47b of the conductive member 47 penetrates the adhesive member 52 and comes into contact with the metal base substrate 23 in a state of being bent toward the storage portion 41.

The washer portion 47a of the conductive member 47 is not limited to an annular shape as long as it has a shape that electrically and mechanically contacts the flange of the sleeve portion 46. The washer portion 47a may be, for example, U-shaped or rod-shaped orthogonal to the wiring portion 47b. Further, since the washer portion 47a is annular, it is easily sandwiched between the screw inserted into the sleeve portion 46 and the sleeve portion 46, which will be described later.

Next, a case where a heat sink is attached to such a semiconductor device 10 as a heat dissipation unit will be described with reference to FIG. FIG. 6 is a cross-sectional view of a semiconductor device to which the heat sink of the first embodiment is attached. In FIG. 6, some reference numerals are omitted.

The heat sink 60 shown in FIG. 6 includes a heat radiating plate 61 and a plurality of fins 62. Further, the heat sink 61 and the plurality of fins 62 are integrally connected. The heat radiating plate 61 has a flat plate shape and is larger than the area of the back surface of the semiconductor device 10 in a plan view. Further, the heat radiating plate 61 has a screw hole 61a formed at a predetermined position on the front surface. The plurality of fins 62 are attached to the main surface of the heat radiating plate 61 (in FIG. 6, the back surface with respect to the front surface to which the semiconductor device 10 is attached) extending vertically downward in FIG. Such a heat sink 60 is made of a metal having excellent thermal conductivity. Metals include aluminum, iron, silver, copper, or alloys containing at least one of these. Further, in order to improve the corrosion resistance, a plating film may be formed on the surface of the heat sink 60 by a plating process. Examples of the plating material in this case include nickel, nickel-phosphorus alloy, and nickel-boron alloy. The thickness of the plating film is preferably 1 μm or more, more preferably 5 μm or more. Further, the heat sink 60 made of the metal also has conductivity.

Further, the heat sink 60 is attached to the back surface of the semiconductor device 10 via the insulating member 70. Examples of the insulating member 70 include heat-dissipating grease and an insulating heat-dissipating sheet. The thermal paste is, for example, silicone mixed with a filler made of a material having excellent thermal conductivity. As the filler material at this time, for example, a general metal is used. Alternatively, as another filler material, an oxide or a nitride is used. The oxide is, for example, aluminum oxide or silicon oxide, and the nitride is, for example, boron nitride, silicon nitride, aluminum nitride, or boron nitride.

The heat insulating sheet is made of a resin having high insulating properties. Such a resin is, for example, a thermosetting resin. The thermosetting resin may contain a thermally conductive filler. This makes it possible to further reduce the thermal resistance of the insulating sheet. As such a thermosetting resin, for example, at least one of epoxy resin, cyanate resin, benzoxazine resin, unsaturated polyester resin, phenol resin, melamine resin, silicone resin, maleimide resin, acrylic resin, and polyamide resin is used. Used. The thermally conductive filler is composed of at least one of an oxide or a nitride. The oxide is, for example, silicon oxide or aluminum oxide. The nitride is, for example, boron nitride, silicon nitride, aluminum nitride, or boron nitride. Further, hexagonal boron nitride may be used as the thermally conductive filler. However, the heat-insulating heat-dissipating sheet may not be able to follow the warp of the semiconductor device 10 generated by the temperature change. Therefore, it is preferable to use thermal paste for the insulating member 70.

A heat sink 60 is attached to the back surface of the semiconductor device 10 via an insulating member 70, a screw 71 is inserted through the fixing portion 45 of the semiconductor device 10, and the screw 71 is screwed into the screw hole 61a of the heat sink 60. As a result, the heat sink 60 is fixed to the semiconductor device 10. The screw 71 is made of a conductive metal.

In the semiconductor device 10 to which the heat sink 60 is attached in this way, the front surface of the metal base substrate 23 is the insulating resin layer 22, and the side peripheral surface is the lower inner wall surface 43b, 43c (adhesive member 52) of the storage portion 41. And the back surface is covered with the insulating member 70, respectively. However, the metal base substrate 23 is mechanically and electrically connected to the heat sink 60 via the conductive member 47 and the screw 71. Therefore, the metal base substrate 23 has the same potential as the heat sink 60. That is, the metal base substrate 23 is electrically connected to the heat sink 60. In order to achieve this state, even if the case 40 does not have the sleeve portion 46, the washer portion 47a of the conductive member 47 is arranged on the front surface of the through hole 45a of the fixing portion 45, and the screw 71 is a washer. It suffices if it comes into contact with the portion 47a and is screwed into the heat sink 60.

Here, as a reference example, a semiconductor device that does not include the conductive member 47 in the semiconductor device 10 will be described with reference to FIG. 7. FIG. 7 is a cross-sectional view of a semiconductor device to which a heat sink of a reference example is attached. Since the semiconductor device 100 shown in FIG. 7 is a semiconductor device 10 that does not include the conductive member 47, it has the same configuration as the semiconductor device 10 except for the conductive member 47.

In the semiconductor device 100, the front surface of the metal base substrate 23 is covered with the insulating resin layer 22, the side surfaces are covered with the lower inner wall surfaces 43b and 43c (adhesive member 52) of the storage portion 41, and the back surface is covered with the insulating member 70. ing. In this way, the metal base substrate 23 is insulated in the semiconductor device 100 to which the heat sink 60 is attached and becomes a floating potential. In the semiconductor device 100, a voltage equal to or higher than the rated voltage of the semiconductor device 100 may be generated between the circuit patterns 21a and 21b and the metal base substrate 23. When such a voltage is generated, the metal base substrate 23 is insulated and cannot be discharged. Further, at this time, a space may be created in the insulating member 70 at a thin portion or in the insulating member 70 due to drying due to volatilization of a small molecule component. Then, there is a possibility that electric discharge will occur starting from those points. When an electric discharge occurs, a hole may be formed in the metal base substrate 23 due to a spatter phenomenon.

On the other hand, the semiconductor device 10 is formed on the front surfaces of the semiconductor chips 31, 32, the insulating resin layer 22, and the insulating resin layer 22, and the circuit patterns 21a, 21b and the insulating resin layer on which the semiconductor chips 31, 32 are arranged are arranged. It has an insulating circuit board 20 including a metal base board 23 formed on the back surface of the 22. Further, the semiconductor device 10 includes a case 40 including a storage portion 41 and a fixing portion 45. The storage portion 41 forms a frame shape including an upper opening 42a and a lower opening 43a (storage area) that are opened from the front surface (storage front surface) to the back surface (storage back surface). The insulating circuit board 20 is housed in the lower opening 43a. The fixed portion 45 is integrally formed on a part of the outer wall portion of the storage portion 41 in a plan view, and is formed from the front surface (fixed front surface) to the back surface (fixed back surface) in the same direction as the lower opening portion 43a. A through hole 45a is formed through the through hole 45a, and one end thereof is in contact with the metal base substrate 23 and the other end is arranged on the front surface side of the through hole 45a by penetrating from the outer wall portion to the lower inner wall surface 43b. Includes the conductive member 47. Then, the heat sink 60 is set on the back surface of the semiconductor device 10 via the insulating member 70, the screw 71 is inserted through the through hole 45a of the fixing portion 45, and the heat sink 60 is screwed into the heat sink 60 to attach the heat sink 60. In such a semiconductor device 10, even if the metal base substrate 23 is covered with the insulating resin layer 22, the lower inner wall surfaces 43b, 43c of the lower opening 43a, and the insulating member 70, the metal base substrate 23 is covered with the conductive member 47 and the screw 71. It is electrically connected to the heat sink 60. Therefore, in the semiconductor device 10, even if a voltage equal to or higher than the rated voltage of the semiconductor device 10 is generated between the circuit patterns 21a and 21b and the metal base substrate 23, the metal base substrate 23 is the same as the heat sink 60. Since it is an electric potential, a voltage can be emitted from the heat sink 60 to the outside. Therefore, the generation of electric discharge can be suppressed, and the generation of holes in the metal base substrate 23 can be suppressed. Therefore, it is possible to prevent the reliability of the semiconductor device 10 from being lowered.

[Second Embodiment]
In the second embodiment, the case where the shape is different from the case 40 of the first embodiment will be described with reference to FIG. FIG. 8 is a diagram for explaining a case of the semiconductor device of the second embodiment. Note that FIG. 8A is a cross-sectional view of the periphery of the fixed portion 45. That is, FIG. 8A corresponds to FIG. 5B, and the illustration of the insulating circuit board 20 is omitted. 8 (B) is a plan view seen from the lower inner wall surface 43b side of FIG. 8 (A). The semiconductor device of the second embodiment has the same configuration as the semiconductor device 10 except for the case 40a.

In the case 40a of the second embodiment, the groove portion 43d is formed on the lower inner wall surface 43b of the storage portion 41. Further, the groove portion 43d is formed on the back surface side of the storage portion 41 corresponding to the width of the wiring portion 47b of the conductive member 47 extending from the lower inner wall surface 43b. The width of the groove portion 43d may be equal to or greater than the width of the wiring portion 47b.

Next, a method for manufacturing such a case 40a will be described with reference to FIGS. 9 and 10. FIG. 9 is a diagram for explaining the resin filled in the mold in the method of manufacturing the case included in the semiconductor device of the second embodiment. FIG. 10 is a diagram for explaining a case in which a mold is removed in a method of manufacturing a case included in the semiconductor device of the second embodiment. Note that FIG. 10A is a cross-sectional view of the periphery of the fixing portion 45 from which the mold has been removed. 10 (B) is a plan view seen from the lower inner wall surface 43b side of the fixed portion 45 of FIG. 10 (A).

Such a case 40a is manufactured by the following injection molding. First, molds 81 and 82 corresponding to the shapes of the storage portion 41 and the fixing portion 45 are prepared. The mold 81 corresponds to a groove portion 43d formed in a protruding portion 42d of the storage portion 41, a lower opening portion 43a, and a lower inner wall surface 43b. Further, the mold 81 includes the recess 811. The mold 82 corresponds to the upper opening 42a of the storage portion 41. The lead terminal 44, the sleeve portion 46, and the conductive member 47 are set by combining the molds 81 and 82. At this time, the wiring portion 47b of the conductive member 47 is bent, and the tip portion corresponds to the recess 811 of the mold 81. That is, the wiring portion 47b is bent so that the tip portion of the wiring portion 47b faces the back surface side of the molded case 40a.

Next, while heating the molds 81 and 82, the molten thermoplastic resin is filled along the molds 81 and 82. After filling the thermoplastic resin, the pressure is adjusted and applied to the thermoplastic resin to cool the thermoplastic resin. After cooling, as shown in FIG. 9, the storage portion 41 and the fixing portion 45 of the case 40a having a shape corresponding to the molds 81 and 82 are formed. The mold 82 is pulled out to the front surface (upper middle of FIG. 9) side of the case 40, and the mold 81 is pulled out to the back surface (lower middle of FIG. 9) side of the case 40a. At this time, since the tip of the wiring portion 47b faces the back surface (lower middle of FIG. 9) side of the case 40a, the mold 81 can be detached by simply moving the mold 81 to the lower middle side of FIG. By detaching the molds 81 and 82 in this way, the case 40a shown in FIG. 10A can be obtained. In this case 40a, a groove 43d is formed on the lower inner wall surface 43b of the lower opening 43a. Further, the bent portion of the wiring portion 47b of the conductive member 47 is housed in the groove portion 43d. After that, the bent portion of the wiring portion 47b is returned to the original position to straighten the wiring portion 47b, whereby the case 40a shown in FIG. 8 can be obtained.

Next, a semiconductor device in which the insulating circuit board 20 is attached to such a case 40a will be described with reference to FIG. FIG. 11 is a cross-sectional view of a main part of the semiconductor device according to the second embodiment. Note that FIG. 11 shows a cross-sectional view of the fixing portion 45 of the semiconductor device according to the second embodiment.

After the case 40a is obtained, the adhesive member 52 is applied to either the side peripheral surface of the insulating circuit board 20 or the lower inner wall surfaces 43b and 43c of the lower opening 43a to insulate the semiconductor chips 31 and 32. The circuit board 20 is attached to the lower opening 43a from the back surface of the case 40a. At this time, the portion of the conductive member 47 protruding from the lower opening 43a of the wiring portion 47b is pushed toward the storage portion 41 by the insulating circuit board 20. Therefore, as shown in FIG. 11, one end of the wiring portion 47b of the conductive member 47 penetrates the adhesive member 52 and comes into contact with the metal base substrate 23 in a state of being bent toward the storage portion 41. When the adhesive member 52 is applied, the groove portion 43d serves as a relief for the adhesive member 52, and the adhesive member 52 is prevented from protruding from the lower opening portion 43a.

As a reference example for the case 40a of the second embodiment, a method of manufacturing the case 40 in the case where there is no groove will be described with reference to FIG. FIG. 12 is a diagram for explaining the resin filled in the mold in the manufacturing method of the case included in the semiconductor device of the reference example. Note that FIG. 12 corresponds to the case of FIG. 9 in which the groove portion 43d is not formed in the case 40.

In this case, dies 81a, 81b, 82 corresponding to the shapes of the storage portion 41 and the fixing portion 45 are used. The mold 82 corresponds to the upper opening 42a of the storage portion 41, as in FIG. Here, a mold 81a corresponding to the lower opening 43a of the storage portion 41 and a mold 81b corresponding to the protruding portion 42d of the storage portion 41 are prepared. Further, the mold 81a includes the recess 812. The lead terminal 44, the sleeve portion 46, and the conductive member 47 are set by combining the molds 81a, 81b, and 82. At this time, the wiring portion 47b of the conductive member 47 is maintained in a straightened state. The tip of the wiring portion 47b corresponds to the recess 812 of the mold 81a.

Next, while heating the molds 81a, 81b, 82, the molten thermoplastic resin is filled along the molds 81a, 81b, 82. After filling the thermoplastic resin, the pressure is adjusted and applied to the thermoplastic resin to cool the thermoplastic resin. After cooling, as shown in FIG. 12, the storage portion 41 and the fixing portion 45 of the case 40 having a shape corresponding to the molds 81a, 81b, 82 are formed. The mold 82 can be pulled out toward the front surface (upper in FIG. 12) of the case 40. The mold 81a can be pulled out to the back surface (lower middle of FIG. 12) side of the case 40. However, the mold 81b can be slid to the left side in FIG. 12 at one end and then pulled out to the back surface (lower middle in FIG. 12) side of the case 40 in order to avoid the tip end portion of the wiring portion 47b. For this reason, in particular, an extra operation is required in the process of removing the mold 81b, the structure of the molds 81a, 81b, 82 becomes complicated, and the manufacturing cost of the case 40 increases.

Therefore, in the case 40a of the second embodiment, as shown in FIG. 8, a groove portion 43d in which the tip end portion of the wiring portion 47b of the conductive member 47 can be accommodated is formed on the lower inner wall surface 43b. It is possible to suppress an increase in the manufacturing cost of 40a. Further, the adhesive member 52 applied when the insulating circuit board 20 is stored in the lower opening 43a of the storage portion 41 of the case 40a in which the groove portion 43d is formed enters the groove portion 43d. Therefore, it is possible to prevent the adhesive member 52 from protruding from the lower opening 43a.

Here, a modified example of the case 40a included in the semiconductor device of the second embodiment will be described with reference to FIG. FIG. 13 is a cross-sectional view of a main part of the semiconductor device of the modified example of the second embodiment. In the case 40a shown in FIG. 13, the protruding portion of the wiring portion 47b of the conductive member 47 is moved to the back surface side of the case 40a as compared with the case of FIG.

In FIG. 11, a case where the height of the metal base substrate 23 is the minimum of 2 mm, the protrusion length S of the wiring portion 47b of the conductive member 47 is sufficiently long, and the gap G is narrow will be described. In this case, if the insulating circuit board 20 is attached to the lower opening 43a of the case 40a, the portion of the wiring portion 47b bent toward the storage portion 41 may penetrate the storage portion 41 side of the insulating circuit board 20. .. In this case, the conductive member 47 may not be reliably electrically connected to the metal base substrate 23.

Therefore, in such a case, as shown in FIG. 13, in the case 40a, the wiring portion 47b of the conductive member 47 is projected on the back surface side of the case 40a as compared with the case of FIG. As a result, when the insulating circuit board 20 is attached to the lower opening 43a of the case 40a, even if the protruding portion of the wiring portion 47b is bent, the bent portion penetrates toward the storage portion 41 side of the insulating circuit board 20. Is prevented. As a result, even when the insulating circuit board 20 (metal base board 23) is thinned, the conductive member 47 is surely electrically connected to the metal base board 23. Even in the case of the case 40 of the first embodiment, the protruding portion of the wiring portion 47b of the conductive member 47 can be moved to the back surface side of the case 40 as compared with the case of FIG.

[Third Embodiment]
In the third embodiment, the case where the mounting position of the conductive member 47 is different from the case of the first embodiment will be described with reference to FIGS. 14 and 15. FIG. 14 is a cross-sectional view of a semiconductor device to which the heat sink of the third embodiment is attached. FIG. 15 is a cross-sectional view of a main part of the semiconductor device according to the third embodiment. Note that FIG. 15 shows a cross-sectional view of the fixing portion 45 of the semiconductor device 10b according to the third embodiment. The semiconductor device 10b has the same configuration as the semiconductor device 10 except for the arrangement position of the conductive member 47.

In the semiconductor device 10 of the first embodiment, the semiconductor device 10b is provided with a conductive member 47 on the back surface side of the case 40b and integrally molded on the back surface side of the fixing portion 45. That is, the washer portion 47a of the conductive member 47 is arranged on the flange on the back surface side of the sleeve portion 46 of the fixing portion 45. The wiring portion 47b extends the back surface of the case 40b from the washer portion 47a, and the tip portion thereof protrudes into the lower opening portion 43a. The washer portion 47a of the conductive member 47 in this case is also not limited to an annular shape as long as it has a shape that electrically and mechanically contacts the flange of the sleeve portion 46.

When the insulating circuit board 20 is attached to the lower opening 43a of the case 40b, the portion of the wiring portion 47b protruding toward the housing portion 41 is pushed toward the housing portion 41 side of the case 40b by the insulating circuit board 20. Therefore, as shown in FIG. 15, one end of the wiring portion 47b of the conductive member 47 comes into contact with the metal base substrate 23 in a state of being bent toward the storage portion 41. The insulating circuit board 20 is fixed to the lower opening 43a by the adhesive member 52.

Then, the heat sink 60 is attached to the back surface of the semiconductor device 10b via the insulating member 70, the screw 71 is inserted into the fixing portion 45 of the semiconductor device 10b, and the screw 71 is screwed into the screw hole 61a of the heat sink 60. As a result, the heat sink 60 is fixed to the semiconductor device 10b.

Even in the semiconductor device 10b to which the heat sink 60 is attached in this way, the metal base substrate 23 is mechanically and electrically connected to the heat sink 60 via the conductive member 47 and the screw 71. Therefore, the metal base substrate 23 has the same potential as the heat sink 60.

Next, a method for manufacturing such a case 40b will be described with reference to FIG. FIG. 16 is a diagram for explaining a manufacturing process of a case included in the semiconductor device of the third embodiment. Note that FIG. 16 is a cross-sectional view of the periphery of the fixed portion 45. FIG. 16A is a diagram for explaining the resin filled in the mold in the manufacturing method of the case 40b, and corresponds to FIG. 9. FIG. 16B shows a fixing portion 45 from which the mold has been removed.

Such a case 40b is manufactured by the following injection molding. First, molds 81c and 82 corresponding to the shapes of the storage portion 41 and the fixing portion 45 are prepared. The mold 81c corresponds to the protrusion 42d and the lower opening 43a of the storage portion 41. The mold 82 is the same as in FIG. The lead terminal 44, the sleeve portion 46, and the conductive member 47 are set by combining the molds 81c and 82. At this time, the tip of the wiring portion 47b of the conductive member 47 faces the back surface (lower side of FIG. 16) of the case 40b. That is, the wiring portion 47b is bent so that the tip portion of the wiring portion 47b faces the direction corresponding to the back surface of the molded case 40b.

Next, while heating the molds 81c and 82, the molten thermoplastic resin is filled along the molds 81c and 82. After filling the thermoplastic resin, the pressure is adjusted and applied to the thermoplastic resin to cool the thermoplastic resin. After cooling, as shown in FIG. 16A, the storage portion 41 and the fixing portion 45 of the case 40b having a shape corresponding to the molds 81c and 82 are formed. The mold 82 is pulled out to the front surface (upper middle of FIG. 16) side of the case 40, and the mold 81c is pulled out to the back surface (lower middle of FIG. 9) side of the case 40. At this time, since the tip of the wiring portion 74b faces the back surface (lower middle of FIG. 16) side of the case 40, the mold 81c can be detached by simply moving the mold 81c to the lower middle side of FIG. Then, by returning the bent portion of the wiring portion 47b to the original position and straightening the wiring portion 47b, the case 40b shown in FIG. 16B can be obtained.

After that, the adhesive member 52 is applied to either the side peripheral surface of the insulating circuit board 20 or the lower inner wall surfaces 43b and 43c of the lower opening 43a, and the insulating circuit board 20 on which the semiconductor chips 31 and 32 are arranged is arranged. Is attached to the lower opening 43a. As a result, the wiring portion 47b of the conductive member 47 comes into contact with the metal base substrate 23 of the insulating circuit board 20.

Therefore, in the case 40b of the third embodiment, the molds 81c and 82 can be easily configured and detached by directing the tip of the wiring portion 47b of the conductive member 47 downward to the case 40b. This makes it possible to suppress an increase in the manufacturing cost of the case 40b.

10, 10b Semiconductor device 20 Insulation circuit board 21a, 21b Circuit pattern 22 Insulation resin layer 23 Metal base board 31, 32 Semiconductor chip 33 Bonding wire 40, 40a, 40b Case 41 Storage part 42a Upper opening 42b, 42c Upper inner wall surface 42d Protruding part 42e Stepped part 42f Protruding back surface 43a Lower opening 43b, 43c Lower inner wall surface 43d Groove 44 Lead terminal 45 Fixed part 45a Through hole 46 Sleeve part 47 Conductive member 47a Washer part 47b Wiring part 51 Sealing member 52 Adhesive member 60 Heat sink 61 Heat sink 61a Screw hole 62 Fin 70 Insulation member 71 Screw 81, 81a, 81b, 81c, 82 Mold 811 Recess

Claims (10)

With semiconductor chips
An insulating circuit board formed on the front surface of the insulating resin layer and the insulating resin layer, and including a circuit pattern on which the semiconductor chip is arranged and a metal plate formed on the back surface of the insulating resin layer.
A frame type having a storage area opened from the front surface of the storage to the back surface of the storage is formed, and the storage portion for storing the insulating circuit board in the storage area and the outer wall portion of the storage portion in a plan view. A through hole is formed integrally with a part of the above and penetrates from the front surface to the fixed back surface in the same direction as the storage area, and the outer wall portion penetrates the storage area and one end thereof is formed. A case including a fixing portion including a conductive member which is in contact with the metal plate and whose other end is arranged on the fixing front surface side of the through hole.
Semiconductor device with. The metal plate of the insulating circuit board is stored in the storage area so as to be flush with the back surface of the storage.
The semiconductor device according to claim 1. The fixed portion forms the same plane with respect to the fixed back surface and the storage back surface, and is formed in the storage portion.
The semiconductor device according to claim 2. A conductive sleeve portion is provided in the through hole.
The semiconductor device according to claim 3. Both ends of the sleeve portion are exposed from the through openings at both ends of the through hole.
The semiconductor device according to claim 4. The other end of the conductive member is in contact with the sleeve portion exposed on the fixed front surface side.
The semiconductor device according to claim 5. The conductive member has a concave groove formed at least corresponding to the width of the conductive member from one end thereof penetrating the storage region of the storage portion toward the back surface of the storage.
The semiconductor device according to any one of claims 2 to 6. The portion of the conductive member exposed from the storage area is bent, and one end thereof faces the back surface of the storage.
The semiconductor device according to claim 7. A heat radiating part provided on the back surface of the storage via an insulating member,
A conductive screw through which the through hole is inserted and screwed into the heat radiating portion,
The semiconductor device according to any one of claims 3 to 8. The other end is annular and is arranged corresponding to the through hole.
The screw is screwed into the heat radiating portion through the other end portion and the through hole.
The semiconductor device according to claim 9.

Images