JP2022012501A - Substrate placement table and manufacturing method of the same - Google Patents

Abstract

To be able to suppress the chemical reaction of a brazing part by processing gas and the generation of particles in a substrate placement table where a heater or an electrode is attached to a plate by brazing.SOLUTION: A substrate placement table has a first plate with a non-through recess and a through-hole through which a lift pin is raised and lowered and a second plate housed in the non-through recess. In the non-through recess, a first wire forming a heater or an electrode is brazed between the first plate and the second plate.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to a substrate mount and a method for manufacturing a substrate mount.

As a method for manufacturing a substrate mount, there is a method in which a heater is embedded inside an insulating material such as ceramics and integrally fired to manufacture the substrate mount. However, in this manufacturing method, the position of the heater may shift during the integral firing. Therefore, Patent Documents 1 to 4 disclose a substrate mounting table manufactured by sandwiching a heater between a plurality of plates and brazing the heater to the plates.

U.S. Patent Application Publication No. 2019/0291199 U.S. Patent Application Publication No. 2017/0263486 U.S. Patent Application Publication No. 2017/0072516 U.S. Patent Application Publication No. 2016/01894912

In the present disclosure, in a substrate mounting table in which a heater or an electrode is attached to a plate by brazing, the substrate mounting table and the substrate mounting table capable of suppressing the generation of particles due to a chemical reaction of the brazed portion by the processing gas. Provides a manufacturing method for.

According to one aspect of the substrate mounting table of the present disclosure,
A first plate having a non-penetrating recess and a through hole for the lift pin to move up and down,
With a second plate housed in the non-penetrating recess,
In the non-penetrating recess, a first wire forming a heater or an electrode is brazed between the first plate and the second plate.

According to the present disclosure, in a substrate mounting table in which a heater or an electrode is attached to a plate by brazing, it is possible to prevent the brazed portion from chemically reacting with the processing gas to generate particles.

It is a vertical sectional view which shows an example of the substrate processing apparatus which has the substrate mounting stand which concerns on 1st Embodiment. It is a vertical sectional view which shows an example of the substrate mounting table which concerns on 1st Embodiment. It is a process drawing which shows an example of the manufacturing method of the substrate mounting table which concerns on embodiment. Following FIG. 3, it is a process diagram which shows an example of the manufacturing method of the substrate mounting table which concerns on embodiment. Following FIG. 4, it is a process diagram which shows an example of the manufacturing method of the substrate mounting table which concerns on embodiment. It is a vertical sectional view which shows an example of the substrate mounting table which concerns on 2nd Embodiment.

Hereinafter, the substrate mounting table and the manufacturing method thereof according to the embodiment of the present disclosure will be described with reference to the attached drawings. In the present specification and the drawings, substantially the same components may be designated by the same reference numerals to omit duplicate explanations.

[Embodiment]
<Board mount and board processing device according to the first embodiment>
First, with reference to FIGS. 1 and 2, an example of a substrate mount according to the first embodiment of the present disclosure and an example of a substrate processing apparatus having this substrate mount will be described. Here, FIG. 1 is a vertical sectional view showing an example of a substrate processing apparatus having a substrate mounting table according to the first embodiment, and FIG. 2 is a vertical sectional view showing an example of a substrate mounting table according to the first embodiment. It is a figure.

The substrate processing apparatus 100 shown in FIG. 1 is an apparatus capable of performing film formation, sputtering, and etching, such as a CVD (Chemical Vapor Deposition) apparatus and an ALD (Atomic Layer Deposition) apparatus. The substrate processing apparatus 100 moves up and down while mounting a processing container 10 which is a chamber and a substrate W (hereinafter, a semiconductor wafer which is an example of the substrate W is referred to as a “wafer”) arranged in the processing container 10. It has a pedestal device 50. The substrate processing device 100 further exhausts various processing gases and purge gases from the supply device 80 that supplies the processing gas and the purge gas to the processing container 10 and the inside of the processing container 10, and further vacuums the inside of the processing container 10 to reduce the pressure. It has an exhaust device 70 and a control device 90 for controlling each device.

The mounting table device 50 mounts the board W and has a board mounting table 20 (hereinafter referred to as “mounting table”) provided with a pin hole 21d (an example of a through hole) and a lift pin 31 for raising and lowering the inside of the pin hole 21d. It has a lift pin unit 30 and a lifting unit 40 for raising and lowering and rotating the mounting table 20. By driving the elevator 41 constituting the elevating unit 40, the mounting table 20 can move up and down between the transport position indicated by the alternate long and short dash line and the processing position above the transfer position. Here, the transport position is set when the wafer W is delivered between the transfer device (not shown) of the wafer W that enters the inside of the processing container 10 from the carry-in / out port 13 of the processing container 10 and the lift pin 31. This is the position where the stand 20 stands by. The processing position is a position where processing such as film formation is performed on the wafer W.

The processing container 10 is made of a metal such as aluminum, and has a side wall 11 having a substantially cylindrical shape and a bottom plate 12 having a circular shape in a plan view. A carry-in / out port 13 for carrying in / out the wafer W is provided on the side wall 11, and the carry-in / out port 13 can be opened and closed by a gate valve 14. An exhaust duct 15 having a substantially rectangular cross section and an annular shape is disposed above the processing container 10. A slit 15a is formed in the exhaust duct 15 along the inner peripheral surface. Further, an exhaust port 15b is formed on the outer wall of the exhaust duct 15. A top plate 16 that closes the upper opening of the processing container 10 is provided on the upper surface of the exhaust duct 15. A seal ring 17 is arranged at the contact interface between the top plate 16 and the exhaust duct 15, and the top plate 16 and the exhaust duct 15 are airtightly sealed by the seal ring 17.

A cap member 61 is attached to the lower surface of the top plate 16, and a processing space S on which the substrate W is processed is formed between the cap member 61 and the mounting table 20 facing each other. For example, the cap member 61 is attached to the top plate 16 by a bolt or the like.

A mortar-shaped recess 62 is provided on the lower surface of the cap member 61. The height of the mounting table 20 when the processing space S is formed is such that a gap S1 is provided between the lowermost end of the recess 62 of the cap member 61 and the upper end of the shield member 28 arranged around the mounting table 20. Set to be formed. For example, it is preferable to apply to the recess 62 a form in which the volume of the processing space S becomes as small as possible and the gas replacement property when the processing gas is replaced by purging becomes good.

A gas introduction path 65 for introducing a processing gas or a purge gas into the processing space S is formed in the center of the cap member 61. The gas introduction path 65 is provided so as to penetrate the center of the cap member 61 and face the center of the wafer W on the mounting table 20 at the lower end thereof. Further, a flow path forming member 63 is fitted in the center of the cap member 61, and the upper part of the gas introduction path 65 is branched by the flow path forming member 63 and communicates with the gas introduction path 16a penetrating the top plate 16, respectively. ing.

The supply device 80 includes a plurality of gas supply sources 81 for individually supplying a plurality of treatment gases and purge gases applied to a plurality of treatments, which are continuously performed inside the treatment container 10, and a plurality of gas supply sources 81. It has a plurality of gas supply pipes 82 for supplying each processing gas and purge gas from. The gas supply pipe 82 communicates with the gas introduction path 16d. Note that FIG. 1 shows only one gas supply source 81 and a gas supply pipe 82 extracted. Each gas supply pipe is provided with an on-off valve and a flow rate controller such as a mass flow controller (neither is shown), and the on-off valve and mass flow controller can be used to switch the gas type and control the gas flow rate. Will be executed.

Below the lower end of the gas introduction path 65 of the cap member 61, a branch plate 64 for dispersing the gas discharged from the gas introduction path 65 in the processing space S is provided. The branch plate 64 is fixed to a support rod 66 extending downward from the flow path forming member 63.

The exhaust device 70 exhausts the inside of the processing container 10 to form a desired depressurized atmosphere. The exhaust device 70 has an exhaust pipe 72 connected to the exhaust port 15b of the exhaust duct 15 and an exhaust mechanism 71 connected to the exhaust pipe 72, and the exhaust mechanism 71 includes a turbo molecular pump, a dry pump, or the like. It has a pressure control valve, an on / off valve, etc. (neither is shown). In the exhaust treatment, the gas in the treatment container 10 reaches the exhaust duct 15 through the slit 15a, and is exhausted from the exhaust duct 15 through the exhaust pipe 72 by the exhaust mechanism 71 of the exhaust device 70. When the inside of the processing container 10 is set to a high pressure, for example, exhaust is performed only by a dry pump. On the other hand, when the inside of the processing container 10 is set to a low pressure, the dry pump and the turbo molecular pump are used in combination to exhaust the air. A pressure sensor (not shown) is installed in the processing container 10, and the pressure inside the processing container 10 is controlled by controlling the opening degree of the pressure control valve based on the detection value of the pressure sensor. ..

The mounting table 20 constituting the mounting table device 50 has a first plate 21 and a second plate 22. On the side surface of the disk-shaped mounting table 20, an annular shield member 28 covering the outer peripheral region of the mounting surface 21e of the first plate 21 and the side surface is provided with a slight gap from the first plate 21. .. The shield member 28 is made of ceramics such as alumina and quartz.

Both the first plate 21 and the second plate 22 are formed of a ceramic material such as aluminum nitride (AlN) or a metal material such as aluminum or nickel alloy. When the first plate 21 and the second plate 22 are formed of a ceramic material, the first plate 21 and the second plate 22 are sintered bodies.

As shown enlarged in FIG. 2, the first plate 21 has a box-shaped tubular shape having a top plate 21a having a circular shape in a plan view and a tubular side wall 21b along the contour of the top plate 21a, and has an inward shape. It is provided with a plurality of non-penetrating recesses 21c. When the first plate 21 is made of a ceramic material, the top plate 21a and the tubular side wall 21b are integrally formed by sintering. The first plate 21 functions as, for example, an electrostatic chuck.

The second plate 22 is a laminated body in which two third plates 23 and 24 have the same or substantially the same outer diameter as the inner diameter of the side wall 21b of the first plate 21.

An electrode 25 having an electrostatic adsorption function (an example of a first wire) is disposed between the first plate 21 and the second plate 22, and the electrode 25 is at least one of the first plate 21 and the second plate 22. It is attached by brazing. Here, silver, copper, zinc, aluminum, titanium, nickel, alloys thereof and the like can be applied as brazing for brazing. Although not shown, the electrode 25 is connected to a DC power supply via a feeder line, and a switch is interposed in the feeder line. When this switch is turned on, a DC voltage is applied from the DC power supply to the electrode 25, so that a Coulomb force or a Johnson Rabbeck force is generated. The wafer W is electrostatically adsorbed on the mounting surface 21e of the first plate 21, which is an electrostatic chuck, by these Coulomb forces and Johnson Rabbeck forces.

The second plate 22 may not be formed by the two third plates 23 and 24, but may be formed by one second plate, or may be a laminated body of three or more third plates. Further, in addition to the form in which the electrode 25 is arranged between the first plate 21 and the second plate 22, a heating portion such as a heater may be arranged between them. Further, the first wire 25 may be a heating portion such as a heater in addition to the electrodes.

A temperature sensor such as a thermocouple (not shown) is arranged on the mounting surface 21e, and the temperature sensor monitors the temperature of the mounting surface 21e and the wafer W at any time. This monitor information is transmitted to the control device 90 at any time, and the temperature control of the mounting surface 21e and the wafer W is executed by the control device 90 based on the monitor information. More specifically, the set temperature data of the mounting surface 21e (and the wafer W) corresponding to various processes is stored inside the control device 90, and the temperature of the mounting surface 21e is adjusted to the set temperature as follows. The temperature control of the heating unit 26 described in the above is executed.

On the other hand, a heating unit 26 (an example of a second wire) such as a heater is arranged between the two third plates 23 and 24 constituting the second plate 22, and the heating unit 26 is the two third plates. It is attached to at least one of 23 and 24 by brazing. Here, the heating portion 26 can be formed of tungsten, molybdenum, nickel, chromium, titanium, lead, silver, platinum, palladium, or an alloy thereof. A refrigerant flow path (not shown) through which a refrigerant supplied from a chiller or the like flows may be built in the third plates 23 and 24.

As shown in FIG. 2, the first plate 21 has a plurality of non-penetrating recesses 21c and pin holes 21d which are a plurality of through holes for raising and lowering the lift pin 31. For example, in the illustrated example, two pin holes 21d are formed in the mounting table 20, and the lift pin 31 moves up and down in each pin hole 21d, but the number of pin holes 21d and the lift pin 31 is not limited to the illustrated example. ..

The second plate 22 that sandwiches the heating portion 26 is fitted into the non-penetrating recess 21c with the electrode 25 sandwiched between the heating portion 26 and the non-penetrating recess 21c.

That is, in a state where the second plate 22 is fitted in the non-penetrating recess 21c of the first plate 21, both the electrode 25 and the second plate 22 including the heating portion 26 inside are exposed to the pin hole 21d. Also, it is not exposed on the outer peripheral surface of the side wall 21b of the first plate 21. Therefore, for example, the brazed portion for fixing the non-penetrating recess 21c and the electrode 25, and the brazed portion for fixing the third plates 23, 24 and the heating portion 26 are also not exposed to the pin hole 21d, and the side wall 21b. It is not exposed on the outer peripheral surface.

Here, the distance t between the outer peripheral surface of the side wall 21b of the mounting table 20 and the pin hole 21d and the ends of the electrodes 25 and the heating portion 26 (the ends of these brazed portions) is, for example, in the range of 6 mm to 25 mm. Is set to.

In this way, by applying the mounting table 20 having a structure in which the brazed portion is not exposed on the pin hole 21d or the outer peripheral surface of the side wall 21b in the mounting table on which the electrode 25 and the heating portion 26 are brazed. Various effects are played. That is, when the brazed part is exposed to the outer peripheral surface of the mounting table or the pin hole, the brazed part chemically reacts with the processing gas, and the reaction product (particle) is supplied into the processing container, causing a problem of metal contamination. However, the problem is solved. Further, if the brazed portion is exposed in the pin hole, the lift pin that moves up and down inside the pin hole and the brazed portion may come into contact with each other, and the raising and lowering of the lift pin may be hindered, but this problem is solved.

Returning to FIG. 1, the lift pin unit 30 constituting the mounting table device 50 has a plurality of elongated lift pins 31 (two in the illustrated example) and a support member 33 for supporting the plurality of lift pins 31. A flange portion 32 is provided at an intermediate position of the lift pin 31, and a portion of the lift pin 31 above the flange portion 32 is inserted into the pin hole 21d of the mounting table 20. As shown in FIG. 2, a portion of the lift pin 31 below the flange portion 32 is slidably inserted vertically into an insertion hole (not shown) of the support member 33. The portion of the lift pin 31 below the flange portion 32 has a larger diameter than the upper portion, and stably supports the upper portion protruding upward from the support member 33.

The lift pin 31, the flange portion 32, and the support member 33 are all made of ceramics such as alumina. For example, in the support member 33 having a circular shape in a plan view, three or four lift pins 31 may be slidably supported by the support member 33 in the circumferential direction at equal intervals. In these forms, three or four pin holes 21d are provided at the corresponding positions of the mounting table 20. The pin hole 21d has an inner diameter larger than that of the lift pin 31 and a smaller diameter than that of the flange portion 32.

The elevator unit 40 constituting the mounting platform device 50 has an elevator 41 and a support member 42 that is moved up and down and rotated by the elevator 41. The support member 42 is fitted into a through hole 33a of the support member 33 constituting the lift pin unit 30, and the upper end of the support member 42 is fixed to the lower surface of the mounting table 20 (third plate 24). The elevator 41 is formed by, for example, a motor, an air cylinder, a combination mechanism thereof, or the like.

An opening 12a is opened in the center of the bottom plate 12 of the processing container 10, and a support member 42 is inserted through the opening 12a.

Here, the length of the lift pin 31 and the position of the flange portion 32 are set so as to satisfy the following two conditions in a state where the lift pin unit 30 is in the processing position. One of the conditions is that the upper end of the lift pin 31 does not protrude above the mounting surface 20e of the mounting table 20. In FIG. 1, the upper end of the lift pin 31 substantially coincides with the mounting surface 20e.

Another condition is that the upper end of the lift pin 31 is located above the lower surface of the mounting table 20 (third plate 24), and at least a part of the lift pin 31 is inserted into the pin hole 21d of the mounting table 20. It is that you are.

As shown in FIG. 1, a flange 45 having a through hole 45a through which the support member 42 is inserted is arranged between the lower part of the bottom plate 12 of the processing container 10 and the elevator 41. A bellows 46 connecting the flange 45 and the bottom plate 12 is provided around the support member 42 between the flange 45 and the bottom plate 12.

Further, in the bottom plate 12, a separate opening 12b is provided on the side of the opening 12a. Then, when the mounting table 20 is in the transport position shown by the alternate long and short dash line in FIG. 1, an elevator member 34 that pushes the lower end of the lift pin 31 upward, an elevator 35 that drives the elevator member 34 to be pushed out, and an elevator 35 A connecting member 35a for connecting the extrusion member 34 is provided. The extrusion member 34 is disposed above the bottom plate 12, the elevator 35 is disposed below the bottom plate 12, and the connecting member 35a inserts the opening 12b. A bellows 36 connecting the bottom plate 12 and the elevator 35 is provided around the communication member 35a between the bottom plate 12 and the elevator 35.

The lift pin 31 is inside the pin hole 21d when the elevator 35 is not driven when the mounting table 20 is in the transport position. On the other hand, when the wafer W is transported to a position above the mounting surface 21e of the mounting table 20 by a transport device (not shown), the elevator 35 is driven to push up the extrusion member 34 upward. Then, when the lift pin 31 is pushed upward by the pushing member 34 pushed upward, the upper end of the lift pin 31 protrudes from the mounting surface 21e, and the wafer W is delivered to the plurality of lift pins 31. Next, the elevator 35 is driven to lower the extrusion member 34, so that the lift pin 31 is housed inside the pin hole 21d, and the wafer W is mounted on the mounting surface 21e.

By heating the heating unit 26 to heat the mounting table 20, the inside of the processing container 10 is made into a desired depressurized atmosphere via the exhaust device 70, and the processing gas or the like is supplied to the processing space S via the supply device 80. , A film forming process or the like is performed on the surface of the wafer W. At this time, the temperature of the mounting table 20 (the mounting surface 21e) is heated to, for example, about 300 ° C to 800 ° C.

The control device 90 controls the operation of each component of the substrate processing device 100, for example, the heating unit 26 built in the mounting table 20, the supply device 80, the exhaust device 70, and the like. The control device 90 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a predetermined process according to a recipe (process recipe) stored in a storage area such as RAM. In the recipe, control information of the substrate processing apparatus 100 for the process conditions is set. The control information includes, for example, the gas flow rate, the pressure in the processing container 10, the temperature in the processing container 10, the temperature of the mounting surface 21e of the first plate 21 which is an electrostatic chuck, the process time, and the like.

The recipe and the program applied by the control device 90 may be stored in, for example, a hard disk, a compact disk, a magneto-optical disk, or the like. Further, the recipe or the like may be set in the control device 90 in a state of being housed in a storage medium that can be read by a portable computer such as a CD-ROM, a DVD, or a memory card, and may be read out. The control device 90 also has a user interface such as an input device such as a keyboard or mouse for inputting commands, a display device such as a display that visualizes and displays the operating status of the board processing device 100, and an output device such as a printer. Have.

<Manufacturing method of substrate mounting table according to the embodiment>
Next, an example of a method for manufacturing a substrate mounting table according to an embodiment will be described with reference to FIGS. 3 to 5. Here, FIGS. 3 to 5 are process diagrams showing an example of a method for manufacturing a substrate mounting table according to an embodiment, in order. Note that FIG. 2 will be referred to as necessary.

In the manufacturing method according to the embodiment, first, as shown in FIG. 3, the first plate 21 having a plurality of non-penetrating recesses 21c is manufactured. More specifically, by sintering a ceramic material such as aluminum nitride (AlN), a first plate 21 having a non-penetrating recess 21c and a pin hole 21d is manufactured. In FIG. 3, in the first plate 21, a cylindrical wall body 20f surrounding the pin hole 21d is provided around the pin hole 21d. For example, the pin hole 21d may not be formed at the time of sintering, but may be formed by cutting in a subsequent step (the above is the step of manufacturing the first plate).

Next, as shown in FIG. 4, the second plate 22 is manufactured separately from the manufacturing of the first plate 21. The second plate 22 is composed of two third plates 23 and 24, and like the first plate 21, the two third plates 23 and 24 are formed by sintering a ceramic material such as aluminum nitride. To manufacture. In the third plates 23 and 24, openings 23a and 24a are formed at the same time as sintering at the positions corresponding to each other when the plates are laminated to each other.

After manufacturing the two third plates 23 and 24, the heating unit 26 is arranged between the third plates 23 and 24 together with the brazing material to form a laminated body, and the heating unit 26 is heat-treated. A second plate 22 brazed to two third plates 23, 24 is manufactured. In the second plate 22, the through holes 22a are formed by the corresponding openings 23a and 24a. The through hole 22a is a hole through which the cylindrical wall body 20f is inserted when the second plate 22 is fitted into the non-penetrating recess 21c of the first plate 21. When the third plates 23 and 24 were sintered, the openings 23a and 24a were not formed, and the two third plates 23 and 24 sandwiching the heating portion 26 were heat-treated and then penetrated by cutting. The holes 22a may be formed (the above is the step of manufacturing the second plate). Here, the step of manufacturing the first plate and the step of manufacturing the second plate may be performed in parallel or may be performed one after the other.

Next, as shown in FIG. 5, the electrode 25 and the brazing material are arranged at the bottom of the non-penetrating recess 21c of the first plate 21, and the second plate 22 is further fitted and then heat-treated. By this heat treatment, the electrode 25 is brazed to the non-penetrating recess 21c and the second plate 22, and the mounting table 20 in which the first plate 21 and the second plate 22 are connected to each other is manufactured (the above is the first). The process of brazing the wire).

According to the illustrated manufacturing method, the electrode 25 which is the first wire is brazed to the non-penetrating recess 21c, and the second plate 22 to which the heating portion 26 which is the second wire is brazed is attached to the non-penetrating recess 21c. By fitting, it is possible to prevent the brazed portion from being exposed to the pin hole 21d or the like.

<Substrate mounting table according to the second embodiment>
Next, an example of the substrate mounting table according to the second embodiment will be described with reference to FIG. Here, FIG. 6 is a vertical sectional view showing an example of the substrate mounting table according to the second embodiment.

The illustrated substrate mounting table 20A differs from the mounting table 20 in that the insulating paste layer 27 is provided between the wall surface of the non-penetrating recess 21c and the second plate 22.

The insulating paste layer 27 can be formed of, for example, an epoxy resin, a polyimide resin, a phenol resin, a modified resin thereof, or the like. Further, as these materials, a single resin or a mixed resin of two or more kinds, or a mixture of a reactive diluent, a curing agent, a silane coupling agent and the like, if necessary, may be applied. ..

According to the substrate mounting table 20A, the brazed portion of the electrode 25 and the heating portion 26 is housed inside the non-penetrating recess 21c provided in the first plate 21, and the brazed portion is further surrounded by the insulating paste layer 27. Thereby, it is possible to prevent the brazed portion from being exposed to the pin hole 21d or the like.

Other embodiments may be used in which other components are combined with respect to the configurations and the like described in the above embodiments, and the present disclosure is not limited to the configurations shown here. This point can be changed without departing from the spirit of the present disclosure, and can be appropriately determined according to the application form thereof. For example, the substrate processing device 100 may be a plasma processing device. Specific examples thereof include Inductive Coupled Plasma (ICP) and Electron Cyclotron resonance Plasma (ECP). Examples thereof include Helicon Wave Plasma (HWP) and Capacitively coupled Plasma (CCP).

20, 20A: Board mounting table (mounting table)
21: First plate 21c: Non-penetrating recess 21d: Through hole (pin hole)
22: Second plate 25: First wire (electrode)
31: Lift pin

In this way, by applying the mounting table 20 having a structure in which the brazed portion is not exposed on the pin hole 21d or the outer peripheral surface of the side wall 21b in the mounting table on which the electrode 25 and the heating portion 26 are brazed. Various effects are played. That is, when the brazed part is exposed to the outer peripheral surface of the mounting table or the pin hole, the brazed part chemically reacts with the processing gas, and the reaction product (particle) is supplied into the processing container, causing the problem of metal contamination . However, the problem is solved. Further, if the brazed portion is exposed in the pin hole, the lift pin that moves up and down inside the pin hole and the brazed portion may come into contact with each other, and the raising and lowering of the lift pin may be hindered, but this problem is solved.

Claims (13)

A first plate having a non-penetrating recess and a through hole for the lift pin to move up and down,
With a second plate housed in the non-penetrating recess,
A substrate mounting table in which a first wire forming a heater or an electrode is brazed between the first plate and the second plate in the non-penetrating recess. The substrate mounting table according to claim 1, wherein an insulating paste layer is provided between the wall surface of the non-penetrating recess and the second plate. The second plate is a laminate of a plurality of third plates.
The substrate mounting table according to claim 1 or 2, wherein a second wire forming a heater is brazed between the upper and lower third plates. The substrate mounting table according to any one of claims 1 to 3, wherein the first plate and the second plate are formed of a metal material or an insulating material. The substrate mounting table according to any one of claims 1 to 4, wherein the first plate and the second plate are formed of AlN. The distance between the outer peripheral surface of the substrate mounting table and the end of the brazed portion where the first wire and the second wire are brazed, and the through hole, and the first wire and the second wire are brazed. The substrate mounting table according to any one of claims 4 and 5, which is dependent on claim 3 and claim 3, wherein the distance from the end of the brazed portion is in the range of 6 mm to 25 mm. The process of manufacturing a first plate with non-penetrating recesses,
The process of manufacturing the second plate to be accommodated in the non-penetrating recess, and
It comprises a step of brazing the first wire in the non-penetrating recess by inserting the first wire forming a heater or an electrode into the non-penetrating recess in order and heating the second plate. How to manufacture a board mount. The method for manufacturing a substrate mounting table according to claim 7, wherein in the step of manufacturing the first plate, a through hole for raising and lowering a lift pin is formed in the first plate. The method for manufacturing a substrate mounting table according to claim 7, further comprising a step of forming a through hole in the first plate for raising and lowering a lift pin, following the step of brazing the first wire. The method for manufacturing a substrate mounting table according to any one of claims 7 to 9, further comprising a step of providing an insulating paste layer between the wall surface of the non-penetrating recess and the second plate. In the step of manufacturing the second plate, a plurality of third plates are laminated to manufacture the second plate, and at this time, a second wire forming a heater is brazed between the upper and lower third plates. The method for manufacturing a substrate mounting table according to any one of claims 7 to 10, which is attached. The method for manufacturing a substrate mounting table according to any one of claims 7 to 11, wherein the first plate and the second plate are formed of a metal material or an insulating material. The method for manufacturing a substrate mounting table according to any one of claims 7 to 12, wherein the first plate and the second plate are formed of AlN.

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