JP2003152059A - Wafer supporting apparatus and semiconductor manufacturing equipment - Google Patents
Wafer supporting apparatus and semiconductor manufacturing equipmentInfo
- Publication number
- JP2003152059A JP2003152059A JP2001348335A JP2001348335A JP2003152059A JP 2003152059 A JP2003152059 A JP 2003152059A JP 2001348335 A JP2001348335 A JP 2001348335A JP 2001348335 A JP2001348335 A JP 2001348335A JP 2003152059 A JP2003152059 A JP 2003152059A
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- JP
- Japan
- Prior art keywords
- wafer
- substrate
- pressing
- ring
- mounting surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Landscapes
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体製造のため
にウエハ(基板)を支持するウエハ支持装置及び基板に
成膜等の処理を行う半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer supporting device for supporting a wafer (substrate) for manufacturing a semiconductor and a semiconductor manufacturing device for performing processing such as film formation on the substrate.
【0002】[0002]
【従来の技術】現在、半導体の製造では、プラズマCV
D(Chemical Vapor Deposition) 装置を用いた成膜が知
られている。プラズマCVD装置は、膜の材料となる材
料ガスを成膜室の中に導入してプラズマ状態にし、プラ
ズマ中の活性な励起原子によって基板表面の化学的な反
応を促進して成膜を行う装置である。プラズマCVD装
置では、成膜室の中に基板を支持するための基板支持部
を備えたウエハ支持装置を備えている。2. Description of the Related Art Currently, in manufacturing semiconductors, plasma CV is used.
Film formation using a D (Chemical Vapor Deposition) apparatus is known. A plasma CVD apparatus is an apparatus for introducing a material gas, which is a material for a film, into a film forming chamber to bring it into a plasma state, and promoting a chemical reaction on a substrate surface by active excited atoms in the plasma to form a film. Is. The plasma CVD apparatus includes a wafer supporting device having a substrate supporting portion for supporting the substrate in the film forming chamber.
【0003】ウエハ支持装置の基板支持部は、静電チャ
ックの機能を持ったセラミックス製となっており、静電
気力を持たせて基板を吸着するようになっている。これ
により、基板支持部の温度制御を行なうことで、基板へ
の熱伝達を効率良く行い、基板の温度制御を効率的に行
なうことができる。The substrate supporting portion of the wafer supporting device is made of ceramics having the function of an electrostatic chuck, and is designed to have an electrostatic force to attract the substrate. Thus, by controlling the temperature of the substrate supporting portion, heat can be efficiently transferred to the substrate, and the temperature of the substrate can be efficiently controlled.
【0004】[0004]
【発明が解決しようとする課題】従来の半導体製造装置
(プラズマCVD装置)におけるウエハ支持装置は、静
電チャックの機能を持ったセラミックス製の基板支持部
を備えているため、非常に高価なものとなり、消耗品と
してのコストが嵩んでいた。また、基板支持部はセラミ
ックスの焼結材であり、脆く衝撃により割れやすく、ま
た、熱膨張係数が大きく広い温度範囲の制御を行なうと
破損の虞がある、といった問題があった。A wafer supporting device in a conventional semiconductor manufacturing apparatus (plasma CVD apparatus) is very expensive because it has a ceramic substrate supporting portion having an electrostatic chuck function. Therefore, the cost as a consumable item was high. Further, since the substrate supporting portion is a ceramic sintered material, it is fragile and easily broken by impact, and there is a problem that the thermal expansion coefficient is large and there is a risk of damage if controlled in a wide temperature range.
【0005】本発明は上記状況に鑑みてなされたもの
で、安価でしかも容易に基板を支持することができるウ
エハ支持装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wafer supporting apparatus which is inexpensive and can easily support a substrate.
【0006】また、本発明は上記状況に鑑みてなされた
もので、安価でしかも容易に基板を支持することができ
るウエハ支持装置を備えた半導体製造装置を提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor manufacturing apparatus equipped with a wafer supporting device which is inexpensive and can easily support a substrate.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
の本発明のウエハ支持装置の構成は、ウエハが載置面に
載置される支持台と、支持台に対する昇降位置が相対的
に調整されることにより載置されたウエハの周縁を支持
台の載置面に押さえる押さえ部材と、押さえ部材を機械
的に載置面方向に押圧する押圧手段とを備えたことを特
徴とする。In order to achieve the above object, the structure of a wafer supporting apparatus of the present invention is such that a supporting table on which a wafer is mounted and a vertical position relative to the supporting table are adjusted relative to each other. It is characterized by further comprising: a pressing member for pressing the peripheral edge of the mounted wafer against the mounting surface of the support base, and a pressing means for mechanically pressing the pressing member in the mounting surface direction.
【0008】そして、押さえ部材は、ウエハの上部に配
されウエハの周縁部に接触するリング状の押さえリング
であり、押圧手段は、押さえリングを下方に付勢する付
勢部材であり、支持台に対する昇降位置を相対的に調整
することにより付勢部材の付勢力に抗して押さえリング
がウエハの周縁部を支持台の載置面に押さえつけること
を特徴とする。The pressing member is a ring-shaped pressing ring which is arranged on the upper part of the wafer and is in contact with the peripheral edge of the wafer. The pressing means is a biasing member which biases the pressing ring downward. The holding ring presses the peripheral edge of the wafer against the mounting surface of the support base against the biasing force of the biasing member by adjusting the elevation position relative to the support.
【0009】また、押さえ部材は、ウエハの周縁部に接
触するリング状の押さえリングであり、押さえリングが
ウエハの上部に位置して昇降自在に配され、押さえリン
グはばね部材により下方に付勢され、押さえリングの支
持台に対する相対的な下降によりばね部材のばね力に抗
して押さえリングがウエハの周縁部に当接することでウ
エハを支持台の載置面に押さえつけることを特徴とす
る。The pressing member is a ring-shaped pressing ring that contacts the peripheral edge of the wafer. The pressing ring is located above the wafer and is vertically movable. The pressing ring is urged downward by a spring member. The pressing ring is brought into contact with the peripheral edge of the wafer against the spring force of the spring member by the relative lowering of the pressing ring with respect to the supporting table, thereby pressing the wafer against the mounting surface of the supporting table.
【0010】上記目的を達成するための本発明の半導体
製造装置の構成は、請求項1乃至請求項3のいずれか一
項に記載のウエハ支持装置に支持されたウエハに処理を
施す処理手段を備えたことを特徴とする。The structure of the semiconductor manufacturing apparatus of the present invention for attaining the above object comprises a processing means for processing a wafer supported by the wafer supporting apparatus according to any one of claims 1 to 3. It is characterized by having.
【0011】また、上記目的を達成するための本発明の
半導体製造装置の構成は、成膜室内に配置される請求項
1乃至請求項3のいずれか一項に記載のウエハ支持装置
と、成膜室内にプラズマを生成しそこで励起・活性化さ
れた粒子によりウエハの表面に薄膜形成処理を施す処理
手段とを備えたことを特徴とする。A semiconductor manufacturing apparatus according to the present invention for achieving the above object comprises a wafer supporting apparatus according to any one of claims 1 to 3 arranged in a film forming chamber. It is characterized by comprising a processing means for generating a plasma in the film chamber and performing a thin film forming process on the surface of the wafer by the particles excited and activated therein.
【0012】[0012]
【発明の実施の形態】図1には本発明の第1実施形態例
に係るウエハ支持装置を備えた半導体製造装置の全体構
成、図2には半導体製造装置における成膜装置(プラズ
マCVD装置)の一例を表す概略側面、図3には成膜装
置の他の例を表す概略側面、図4にはウエハ支持装置の
斜視状態、図5には基板を支持した状態のウエハ支持装
置の断面、図6には他の実施形態例の押圧手段を表す要
部断面を示してある。また、図7には本発明の第2実施
形態例に係るウエハ支持装置の断面、図8には本発明の
第3実施形態例に係るウエハ支持装置の断面を示してあ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an overall configuration of a semiconductor manufacturing apparatus equipped with a wafer supporting apparatus according to a first embodiment of the present invention, and FIG. 2 is a film forming apparatus (plasma CVD apparatus) in the semiconductor manufacturing apparatus. 3 is a schematic side view showing an example of the film forming apparatus, FIG. 3 is a schematic side view showing another example of the film forming apparatus, FIG. 4 is a perspective view of the wafer supporting apparatus, and FIG. 5 is a cross section of the wafer supporting apparatus supporting the substrate. FIG. 6 shows a cross section of a main part of a pressing means according to another embodiment. Further, FIG. 7 shows a cross section of the wafer supporting device according to the second embodiment of the present invention, and FIG. 8 shows a cross section of the wafer supporting device according to the third embodiment of the present invention.
【0013】図1に示すように、半導体製造装置1は、
大気圧中でウエハ(基板)2が多数保管される保管室3
を備え、保管室3に保管された基板2はロボット5等の
搬送手段により搬送室6に搬送される。搬送室6が真空
雰囲気にされた後、搬送室6から基板2が成膜装置7の
ウエハ支持装置8に搬送されて所定位置に位置決め載置
される。保管室3と搬送室6の間、及び搬送室6と成膜
装置7の間には内部の圧力を維持するためのゲート9が
設けられている。As shown in FIG. 1, the semiconductor manufacturing apparatus 1 is
Storage room 3 where a large number of wafers (substrates) 2 are stored under atmospheric pressure
The substrate 2 stored in the storage chamber 3 is transferred to the transfer chamber 6 by the transfer means such as the robot 5. After the transfer chamber 6 is set to a vacuum atmosphere, the substrate 2 is transferred from the transfer chamber 6 to the wafer support device 8 of the film forming apparatus 7 and positioned and placed at a predetermined position. A gate 9 for maintaining an internal pressure is provided between the storage chamber 3 and the transfer chamber 6 and between the transfer chamber 6 and the film forming apparatus 7.
【0014】成膜装置7を説明する。図2に示すよう
に、基部11には円筒状のチャンバ12が設けられ、チ
ャンバ12内に成膜室13が形成されている。チャンバ
12の上部には円形の天井板14が設けられ、チャンバ
12の中心における成膜室13にはウエハ支持装置8が
備えられている。ウエハ支持装置8は基板2が載置され
る支持台としての載置部17が備えられ、載置部17は
伸縮自在な支持軸18に支持されている。載置部7は、
支持軸18の伸縮により上下方向の高さが最適な高さに
調整できるようになっている。ウエハ支持装置8には、
載置部7が最適な高さに調整された際に基板2を機械的
に載置部7の載置面に押し付ける押さえ部材16が備え
られている。The film forming apparatus 7 will be described. As shown in FIG. 2, a cylindrical chamber 12 is provided in the base 11, and a film forming chamber 13 is formed in the chamber 12. A circular ceiling plate 14 is provided above the chamber 12, and a film forming chamber 13 at the center of the chamber 12 is provided with a wafer supporting device 8. The wafer supporting device 8 is provided with a mounting portion 17 as a supporting base on which the substrate 2 is mounted, and the mounting portion 17 is supported by a support shaft 18 which is expandable and contractible. The mounting portion 7 is
The vertical height can be adjusted to an optimum height by expanding and contracting the support shaft 18. The wafer support device 8 includes
A holding member 16 is provided for mechanically pressing the substrate 2 against the mounting surface of the mounting portion 7 when the mounting portion 7 is adjusted to an optimum height.
【0015】天井板14の上には、例えば、円形リング
状の高周波アンテナ23が配置され、高周波アンテナ2
3には整合器24を介して高周波電源25が接続されて
いる。高周波アンテナ23に電力を供給することにより
電磁波がチャンバ12の成膜室13に入射する。チャン
バ12内に入射された電磁波は、成膜室13内のガスを
イオン化してプラズマを発生する。On the ceiling plate 14, for example, a circular ring-shaped high frequency antenna 23 is arranged.
A high-frequency power source 25 is connected to 3 via a matching unit 24. By supplying electric power to the high frequency antenna 23, electromagnetic waves enter the film forming chamber 13 of the chamber 12. The electromagnetic wave that has entered the chamber 12 ionizes the gas in the film forming chamber 13 to generate plasma.
【0016】チャンバ12には例えばシラン(SiH4)等の
材料ガスを供給するガス供給ノズル26が設けられ、ガ
ス供給ノズル26から成膜室13内に成膜材料(例えば
Si)となる材料ガスが供給される。また、チャンバ12
にはアルゴン等の補助ガスを供給する補助ガス供給ノズ
ル27が設けられ、基部11にはチャンバ12の内部を
排気するための真空排気系(図示省略)に接続される排
気口30が設けられている。The chamber 12 is provided with a gas supply nozzle 26 for supplying a material gas such as silane (SiH 4 ) and the like.
The material gas that becomes Si) is supplied. Also, the chamber 12
Is provided with an auxiliary gas supply nozzle 27 for supplying an auxiliary gas such as argon, and the base 11 is provided with an exhaust port 30 connected to a vacuum exhaust system (not shown) for exhausting the inside of the chamber 12. There is.
【0017】上述したプラズマCVD装置では、ウエハ
支持装置8の載置部17に基板2が載せられ、載置部7
が最適な高さに調整された際に基板2が押さえ部材16
により機械的に載置部7の載置面に押し付けられる。載
置部7には図示しないヒータや冷媒通路等からなる温度
制御手段が備えられ、載置部7に押し付けられた基板2
が効率よく温度制御される。In the plasma CVD apparatus described above, the substrate 2 is placed on the placing portion 17 of the wafer supporting device 8, and the placing portion 7 is placed.
When the substrate is adjusted to the optimum height, the substrate 2 holds the pressing member 16
Is mechanically pressed against the mounting surface of the mounting portion 7. The mounting portion 7 is provided with temperature control means (not shown) including a heater and a refrigerant passage, and the substrate 2 pressed against the mounting portion 7
Is efficiently temperature controlled.
【0018】ガス供給ノズル26から所定流量の材料ガ
スを成膜室13内に供給すると共に補助ガス供給ノズル
27から処置流量の補助ガスを成膜室13内に供給し、
成膜室13内を成膜条件に応じた所定圧力に設定する。
その後、高周波電源25から高周波アンテナ23に電力
を供給して高周波を発生させる。同時に、三相インバー
タ電源22から電磁石19に電圧が印加され、成膜室1
3内に回転磁場が生成される。A material gas having a predetermined flow rate is supplied from the gas supply nozzle 26 into the film forming chamber 13, and an auxiliary gas having a treatment flow rate is supplied into the film forming chamber 13 from the auxiliary gas supply nozzle 27.
The inside of the film forming chamber 13 is set to a predetermined pressure according to the film forming conditions.
Then, the high frequency power supply 25 supplies power to the high frequency antenna 23 to generate a high frequency. At the same time, a voltage is applied from the three-phase inverter power supply 22 to the electromagnet 19, and the film formation chamber 1
A rotating magnetic field is generated in 3.
【0019】これにより、成膜室13内の材料ガスがプ
ラズマ状態となる。このプラズマは、材料ガス中の他の
中性分子に衝突して更に中性分子を電離、あるいは励起
する。こうして生じた活性な粒子は、基板2の表面に接
近して効率良く化学反応を起こし、堆積してCVD膜と
なる。即ち、処理手段としてプラズマにより成膜を行う
機能が構成されている。尚、プラズマにより成膜を行う
装置を例に挙げているが、成膜以外でもエッチング等他
の処理を行う装置を適用することも可能である。As a result, the material gas in the film forming chamber 13 becomes a plasma state. This plasma collides with other neutral molecules in the material gas and further ionizes or excites the neutral molecules. The active particles generated in this way approach the surface of the substrate 2 to efficiently cause a chemical reaction, and are deposited to form a CVD film. That is, the function of performing film formation by plasma is configured as the processing means. Although an apparatus for performing film formation by plasma is taken as an example, an apparatus for performing other processing such as etching other than film formation can be applied.
【0020】図3に基づいて成膜装置の他の例を説明す
る。図3に示した成膜装置は、基板2に金属、例えば、
Cuの薄膜を成膜する銅成膜装置の例である。図2に示し
た部材と同一部材には同一符号を付して重複する説明は
省略してある。Another example of the film forming apparatus will be described with reference to FIG. In the film forming apparatus shown in FIG. 3, a metal such as
It is an example of a copper film forming apparatus for forming a thin film of Cu. The same members as those shown in FIG. 2 are designated by the same reference numerals, and the duplicated description is omitted.
【0021】チャンバ12は、絶縁材料、例えば、セラ
ミックスで形成され、載置部17は図示しない温度制御
手段により所定温度(例えば、基板3が100℃乃至2
00℃に維持される温度)に制御されている。チャンバ
12の上面は開口部とされ、開口部は金属製の被エッチ
ング部材としての銅板部材31によって塞がれている。
銅板部材31によって塞がれたチャンバ12の内部は所
定の圧力に維持される。銅板部材31にはヒータ等の温
度制御手段(図示省略)が設けられ、例えば、200℃
乃至400℃程度に温度制御される。The chamber 12 is made of an insulating material, for example, ceramics, and the mounting portion 17 has a predetermined temperature (for example, the substrate 3 is 100 ° C. to 2 ° C.) by a temperature control means (not shown).
The temperature is maintained at 00 ° C). The upper surface of the chamber 12 is an opening, and the opening is closed by a copper plate member 31 as a member to be etched made of metal.
The inside of the chamber 12 closed by the copper plate member 31 is maintained at a predetermined pressure. The copper plate member 31 is provided with a temperature control means (not shown) such as a heater, for example, 200 ° C.
The temperature is controlled to about 400 ° C.
【0022】チャンバ12の筒部の周囲にはコイル状巻
線アンテナとしてのプラズマアンテナ32が設けられ、
プラズマアンテナ32には整合器33及び電源34が接
続されて給電が行われる。A plasma antenna 32 as a coiled coil antenna is provided around the cylindrical portion of the chamber 12,
A matching unit 33 and a power source 34 are connected to the plasma antenna 32 to supply power.
【0023】銅板部材31の下方におけるチャンバ12
の筒部には、チャンバ12の内部に塩素(ハロゲン)を
含有する原料ガス(He,Ar等で塩素濃度が≦50% 、好ま
しくは10% 程度に希釈されたCl2 ガス)を供給するノズ
ル35が接続されている。ノズル35は水平に向けて開
口し、ノズル35には流量制御器36を介して原料ガス
が送られる。尚、原料ガスに含有されるハロゲンとして
は、フッ素(F)、臭素(Br)及びヨウ素(I)等を
適用することが可能である。The chamber 12 below the copper plate member 31.
A nozzle for supplying a source gas containing chlorine (halogen) (Cl 2 gas diluted with He, Ar, etc., with a chlorine concentration of ≦ 50%, preferably about 10%) into the cylindrical part of the chamber 12. 35 is connected. The nozzle 35 opens horizontally, and the raw material gas is sent to the nozzle 35 via a flow rate controller 36. As the halogen contained in the source gas, it is possible to apply fluorine (F), bromine (Br), iodine (I), or the like.
【0024】上述した銅成膜装置では、チャンバ12の
内部にノズル35から原料ガスを供給し、プラズマアン
テナ32から電磁波をチャンバ12の内部に入射するこ
とで、Cl2 ガスがイオン化されてCl2 ガスプラズマ(原
料ガスプラズマ)37が発生する。Cl2 ガスプラズマ3
7により、銅板部材31にエッチング反応が生じ、前駆
体(CuxCly)38が生成される。このとき、銅板部材3
1は図示しない温度制御手段により基板2の温度よりも
高い温度(例えば、200℃乃至400℃)に維持され
ている。[0024] In the above-mentioned copper film forming apparatus, a raw material gas was supplied from the nozzle 35 into the chamber 12, and electromagnetic waves are shot from the plasma antenna 32 is into the chamber 12, Cl 2 gas is ionized Cl 2 A gas plasma (source gas plasma) 37 is generated. Cl 2 gas plasma 3
7, an etching reaction occurs in the copper plate member 31, and a precursor (CuxCly) 38 is generated. At this time, the copper plate member 3
1 is maintained at a temperature higher than the temperature of the substrate 2 (for example, 200 ° C. to 400 ° C.) by a temperature control unit (not shown).
【0025】チャンバ12の内部で生成された前駆体
(CuxCly)38は、銅板部材31よりも低い温度に制御
された基板2に運ばれる。基板2に運ばれる前駆体(Cu
xCly)38は還元反応によりCuイオンのみとされて基板
2に当てられ、基板2の表面にCu薄膜が生成される。The precursor (CuxCly) 38 generated inside the chamber 12 is carried to the substrate 2 whose temperature is controlled to be lower than that of the copper plate member 31. Precursor (Cu
The xCly) 38 is converted into only Cu ions by the reduction reaction and is applied to the substrate 2 to form a Cu thin film on the surface of the substrate 2.
【0026】このときの反応は、次式で表すことができ
る。
2Cu+Cl2 →2CuCl→2Cu↓+Cl2 ↑
反応に関与しないガス及びエッチング生成物は排気口3
0から排気される。The reaction at this time can be expressed by the following equation. 2Cu + Cl 2 → 2CuCl → 2Cu ↓ + Cl 2 ↑ Exhaust port 3 for gases and etching products not involved in the reaction
Exhausted from 0.
【0027】尚、原料ガスとして、He,Ar等で希釈され
たCl2 ガスを例に挙げて説明したが、Cl2 ガスを単独で
用いたり、HCl ガスを適用することも可能である。ま
た、銅板部材31の材質は、銅(Cu)に限らず、ハロゲ
ン化物形成金属、好ましくは塩化物形成金属であれば、
Al,Ag,Au,Pt,Ta,Ti,W,Si等を用いることが可能である。
この場合、前駆体はAg,Au,Pt,Ta,Ti, W等のハロゲン化
物(塩化物)となり、基板2の表面に生成される薄膜は
Al,Ag,Au,Pt,Ta,Ti,W,Si等になる。Although Cl 2 gas diluted with He, Ar or the like has been described as an example of the source gas, Cl 2 gas may be used alone or HCl gas may be applied. Further, the material of the copper plate member 31 is not limited to copper (Cu), and if it is a halide-forming metal, preferably a chloride-forming metal,
It is possible to use Al, Ag, Au, Pt, Ta, Ti, W, Si and the like.
In this case, the precursor is a halide (chloride) of Ag, Au, Pt, Ta, Ti, W, etc., and the thin film formed on the surface of the substrate 2 is
Al, Ag, Au, Pt, Ta, Ti, W, Si, etc.
【0028】図4、図5に基づいてウエハ支持装置8を
詳細に説明する。The wafer supporting device 8 will be described in detail with reference to FIGS. 4 and 5.
【0029】図に示すように、ウエハ支持装置8は、基
板2よりも大きい円形で、例えば、テフロン(登録商
標)系のフッ素化合物製の載置部17と、支持軸18と
で構成され、載置部17の載置面には図示しない昇降ピ
ンが設けられている。基板2が搬入される場合、昇降ピ
ンが載置部17の載置面に対して上昇しており、昇降ピ
ンの上に基板2が載せられて所定の位置に調整された後
に昇降ピンが下降して基板2が載置部17の載置面に載
置される。載置部17の載置面の周囲には基板2の周縁
が嵌合する案内が設けられ、昇降ピンの下降により案内
に基板2の周縁が嵌合して所定位置に載置される。尚、
昇降ピンは、載置部17の昇降により相対的に載置面に
対して昇降する構成とされることもある。As shown in the figure, the wafer supporting device 8 is a circle larger than the substrate 2 and is composed of a mounting portion 17 made of, for example, a Teflon (registered trademark) type fluorine compound and a supporting shaft 18. Elevating pins (not shown) are provided on the mounting surface of the mounting portion 17. When the substrate 2 is carried in, the lifting pins are raised with respect to the mounting surface of the mounting portion 17, and the substrate 2 is placed on the lifting pins and adjusted to a predetermined position before the lifting pins are lowered. Then, the substrate 2 is mounted on the mounting surface of the mounting portion 17. A guide around which the peripheral edge of the substrate 2 fits is provided around the mounting surface of the mounting portion 17, and the peripheral edge of the substrate 2 fits into the guide by the lowering of the elevating pin and is placed at a predetermined position. still,
The elevating pin may be configured to be moved up and down relatively with respect to the mounting surface when the mounting portion 17 is moved up and down.
【0030】載置部17の外方には複数本(例えば、3
本)の支柱41が固定され、支柱41の頂部には固定リ
ング42が取り付けられている。固定リング42の下方
における支柱41には押さえリング43が昇降自在に支
持されている。押さえリング43の内周縁の径は基板2
の外径に対して若干小さな大きさ(例えば、半径3mm程
度小さな径)に形成されている。固定リング42と押さ
えリング43の間における支柱41には圧縮コイルばね
44が設けられ、圧縮コイルばね44の両端は固定リン
グ42及び押さえリング43にそれぞれ固定されてい
る。押さえリング43は圧縮コイルばね44によって下
方に付勢された状態になっている。A plurality of (for example, 3
The column 41 is fixed, and a fixing ring 42 is attached to the top of the column 41. A pressing ring 43 is supported on the column 41 below the fixed ring 42 so as to be vertically movable. The diameter of the inner peripheral edge of the pressing ring 43 is the substrate 2
Is formed to have a size slightly smaller than the outer diameter (for example, a radius of about 3 mm). A compression coil spring 44 is provided on the column 41 between the fixed ring 42 and the pressing ring 43, and both ends of the compression coil spring 44 are fixed to the fixed ring 42 and the pressing ring 43, respectively. The pressing ring 43 is biased downward by the compression coil spring 44.
【0031】上記構成のウエハ支持装置8では、複数本
の支柱41の間から基板2が搬入されて載置部17の載
置面に基板2が載置されて所定位置に位置決めされる。
基板2を成膜位置に位置させるために支持軸18が伸長
して載置部17が上昇すると、載置面に載置された基板
2の周縁に押さえリング43が当接する。このとき、圧
縮コイルばね44に縮み側の力が働く。これにより、基
板2の周縁(例えば、3mm程度)が押さえリング43に
よって載置面に機械的にばね力によって押さえつけられ
た状態なる(図5参照)。基板2は圧縮コイルばね44
のばね力により押さえリング43を介して載置面に押さ
えつけられるので、基板2に反りや寸法誤差等があった
場合でも、反りや寸法誤差を吸収することができる。In the wafer supporting device 8 having the above structure, the substrate 2 is loaded from between the plurality of columns 41, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position.
When the support shaft 18 extends and the mounting portion 17 rises to position the substrate 2 at the film formation position, the pressing ring 43 contacts the peripheral edge of the substrate 2 mounted on the mounting surface. At this time, a force on the compression side acts on the compression coil spring 44. As a result, the peripheral edge of the substrate 2 (for example, about 3 mm) is mechanically pressed against the mounting surface by the pressing ring 43 by the spring force (see FIG. 5). The substrate 2 is a compression coil spring 44.
Since it is pressed against the mounting surface via the pressing ring 43 by the spring force, the warp and the dimensional error can be absorbed even when the substrate 2 has the warp and the dimensional error.
【0032】上述したウエハ支持装置8では、基板2を
成膜位置に位置させるために載置部17を上昇させるこ
とで、圧縮コイルばね44により付勢された押さえリン
グ43により基板2が載置部17の載置面に機械的に押
さえつけられる。このため、電気的な駆動源等を用いる
ことなく簡単な構成により基板2を載置面に押さえつけ
ることができ、安価でしかも容易に基板2を載置部17
に支持することが可能になる。In the above-described wafer support device 8, the substrate 2 is placed by the pressing ring 43 urged by the compression coil spring 44 by raising the placing portion 17 to position the substrate 2 at the film forming position. It is mechanically pressed against the mounting surface of the part 17. For this reason, the substrate 2 can be pressed against the mounting surface with a simple configuration without using an electric drive source or the like, and the substrate 2 can be mounted at low cost and easily.
Will be able to support.
【0033】そして、図2に示したプラズマCVD装置
及び図3に示した成膜装置では、安価でしかも容易に基
板2を載置部17に支持することができるウエハ支持装
置8を備えた半導体製造装置とすることが可能になる。In the plasma CVD apparatus shown in FIG. 2 and the film forming apparatus shown in FIG. 3, the semiconductor provided with the wafer supporting device 8 that can easily and inexpensively support the substrate 2 on the mounting portion 17 is provided. It becomes possible to make it a manufacturing apparatus.
【0034】尚、支柱41の頂部に固定リング42を取
り付けて複数本の支柱41を一体的な構成としたが、固
定リング42に代えて支柱41の頂部にそれぞれに圧縮
コイルばね44を受けるフランジ等を設けることも可能
である。また、載置部17を固定状態とし、支柱41、
固定リング42及び押さえリング43を昇降させる構成
とすることも可能である。Although the fixing ring 42 is attached to the top of the support column 41 to integrally form the plurality of support columns 41, a flange for receiving the compression coil spring 44 on the top of the support column 41 instead of the fixing ring 42. Etc. can be provided. In addition, the mounting portion 17 is fixed, and the support columns 41,
It is also possible to raise and lower the fixing ring 42 and the pressing ring 43.
【0035】また、図6に示すように、押さえリング4
3に代えて、固定リング42の下面から下部を臨むボー
ル部材51を設け、ボール部材51をばね部材52によ
り下方に付勢する構成(押圧手段)とすることも可能で
ある。この場合、載置部17を上昇させることで、ばね
部材52により付勢されたボール部材51により基板2
が載置部17の載置面に機械的に押さえつけられる。ボ
ール部材51を用いた場合、固定リング42と基板2と
の間で周方向に相対的な移動等があっても、ボール部材
51の回転により吸収することができる。Further, as shown in FIG.
Instead of 3, the ball member 51 facing the lower part from the lower surface of the fixing ring 42 may be provided, and the ball member 51 may be biased downward by the spring member 52 (pressing means). In this case, by raising the mounting portion 17, the ball member 51 urged by the spring member 52 causes the substrate 2 to move.
Are mechanically pressed against the mounting surface of the mounting portion 17. When the ball member 51 is used, even if there is relative movement in the circumferential direction between the fixed ring 42 and the substrate 2, it can be absorbed by the rotation of the ball member 51.
【0036】図7に基づいてウエハ支持装置の第2実施
形態例を説明する。尚、図4、図5に示した部材と同一
部材には同一符号を付して重複する説明は省略してあ
る。A second embodiment of the wafer support device will be described with reference to FIG. The same members as those shown in FIGS. 4 and 5 are designated by the same reference numerals, and duplicate description is omitted.
【0037】第2実施形態例のウエハ支持装置46は、
載置部17の外方には複数本(例えば、3本)の支柱4
7がチャンバ12に対して昇降自在に支持され、支柱4
7の頂部には押さえリング48が取り付けられている。
押さえリング48の内周縁の径は基板2の外径に対して
若干小さな大きさ(例えば、半径3mm程度小さな径)に
形成されている。チャンバ12の外側に貫通する支柱4
7とチャンバ12側との間には支柱47を下方に付勢す
る圧縮コイルばね49が取り付けられている。The wafer support device 46 of the second embodiment is
A plurality of (for example, three) struts 4 are provided outside the mounting portion 17.
7 is movably supported with respect to the chamber 12, and the support 4
A pressing ring 48 is attached to the top of 7.
The diameter of the inner peripheral edge of the pressing ring 48 is formed to be slightly smaller than the outer diameter of the substrate 2 (for example, the radius is about 3 mm smaller). Post 4 penetrating outside chamber 12
A compression coil spring 49 that urges the support column 47 downward is attached between 7 and the chamber 12 side.
【0038】上記構成のウエハ支持装置46では、複数
本の支柱48の間から基板2が搬入されて載置部17の
載置面に基板2が載置されて所定位置に位置決めされ
る。基板2を成膜位置に位置させるために支持軸18が
伸長して載置部17が上昇すると、載置面に載置された
基板2の周縁に押さえリング48が当接する。このと
き、圧縮コイルばね49に縮み側の力が働く。これによ
り、支柱48を介して押さえリング48に押し付け力が
生じ、基板2の周縁(例えば、3mm程度)が押さえリン
グ48によって載置面に機械的に押さえつけられた状態
となる。基板2は圧縮コイルばね49のばね力により押
さえリング48を介して載置面に押さえつけられるの
で、基板2に反りや寸法誤差等があった場合でも、反り
や寸法誤差を吸収することができる。In the wafer supporting device 46 having the above structure, the substrate 2 is loaded from between the plurality of columns 48, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position. When the support shaft 18 extends to raise the mounting portion 17 to position the substrate 2 at the film forming position, the pressing ring 48 contacts the peripheral edge of the substrate 2 mounted on the mounting surface. At this time, a force on the compression side acts on the compression coil spring 49. As a result, a pressing force is applied to the pressing ring 48 via the support column 48, and the peripheral edge (for example, about 3 mm) of the substrate 2 is mechanically pressed to the mounting surface by the pressing ring 48. Since the substrate 2 is pressed against the mounting surface by the spring force of the compression coil spring 49 via the pressing ring 48, even if the substrate 2 has a warp or a dimensional error, the warp or the dimensional error can be absorbed.
【0039】上述したウエハ支持装置46では、基板2
を成膜位置に位置させるために載置部17を上昇させる
ことで、圧縮コイルばね49により付勢された支柱47
及び押さえリング48により基板2が載置部17の載置
面に機械的に押さえつけられる。このため、電気的な駆
動源等を用いることなく簡単な構成により基板2を載置
面に押さえつけることができ、安価でしかも容易に基板
2を載置部17に支持することが可能になる。In the wafer support device 46 described above, the substrate 2
The column 47 is urged by the compression coil spring 49 by raising the mounting portion 17 to position the film at the film forming position.
The substrate 2 is mechanically pressed against the mounting surface of the mounting portion 17 by the pressing ring 48. Therefore, the substrate 2 can be pressed against the mounting surface with a simple configuration without using an electric drive source, and the substrate 2 can be easily and inexpensively supported on the mounting portion 17.
【0040】図8に基づいてウエハ支持装置の第3実施
形態例を説明する。尚、図4乃至図7に示した部材と同
一部材には同一符号を付して重複する説明は省略してあ
る。A third embodiment of the wafer supporting apparatus will be described with reference to FIG. The same members as those shown in FIGS. 4 to 7 are designated by the same reference numerals, and duplicate explanations are omitted.
【0041】第3実施形態例のウエハ支持装置56は、
載置部17の外方には複数本(例えば、3本)の支柱5
7がチャンバ12に固定され、支柱57の頂部には熱膨
張部材(例えば、SiO2)で構成される押さえリング58
が取り付けられている。押さえリング58は温度制御さ
れる載置部17に接触して熱伝達により温度が上昇する
ことで膨張する構成となっている。従って、押さえリン
グ58には載置部17に接触する接触部59が備えられ
ている。押さえリング58の内周縁の径は基板2の外径
に対して若干小さな大きさ(例えば、半径3mm程度小さ
な径)に形成されている。押さえリング58の高さは、
載置部17が上昇して成膜位置に基板2が位置した際
に、押さえリング58が基板2の上面に当接する高さに
設定されている。The wafer support device 56 of the third embodiment is
A plurality of (for example, three) support columns 5 are provided outside the mounting portion 17.
7 is fixed to the chamber 12, and a pressing ring 58 composed of a thermal expansion member (eg, SiO 2 ) is provided on the top of the column 57.
Is attached. The pressing ring 58 is in contact with the temperature-controlled mounting portion 17 and expands when the temperature rises due to heat transfer. Therefore, the pressing ring 58 is provided with a contact portion 59 that comes into contact with the mounting portion 17. The diameter of the inner peripheral edge of the pressing ring 58 is formed to be slightly smaller than the outer diameter of the substrate 2 (for example, the radius is about 3 mm smaller). The height of the pressing ring 58 is
The pressing ring 58 is set to a height at which the pressing ring 58 abuts the upper surface of the substrate 2 when the mounting portion 17 moves up and the substrate 2 is positioned at the film formation position.
【0042】上記構成のウエハ支持装置56では、複数
本の支柱57の間から基板2が搬入されて載置部17の
載置面に基板2が載置されて所定位置に位置決めされ
る。基板2を成膜位置に位置させるために支持軸18が
伸長して載置部17が上昇すると、押さえリング58の
接触部59が載置部17に接触すると共に、載置面に載
置された基板2の周縁に押さえリング58が当接する。
接触部59が載置部17に接触することで、載置部17
からの熱が押さえリング58に伝達して押さえリング5
8が熱膨張する。これにより、押さえリング58に押し
付け力が生じ、基板2の周縁(例えば、3mm程度)が押
さえリング58によって載置面に機械的に押さえつけら
れた状態なる。In the wafer supporting device 56 having the above-described structure, the substrate 2 is loaded from between the plurality of columns 57, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position. When the support shaft 18 extends and the mounting portion 17 rises to position the substrate 2 at the film forming position, the contact portion 59 of the pressing ring 58 contacts the mounting portion 17 and is mounted on the mounting surface. The pressing ring 58 contacts the peripheral edge of the substrate 2.
When the contact portion 59 contacts the mounting portion 17, the mounting portion 17
The heat from the transfer to the pressing ring 58 and the pressing ring 5
8 thermally expands. As a result, a pressing force is generated on the pressing ring 58, and the peripheral edge (for example, about 3 mm) of the substrate 2 is mechanically pressed against the mounting surface by the pressing ring 58.
【0043】上述したウエハ支持装置56では、基板2
を成膜位置に位置させるために載置部17を上昇させる
ことで、押さえリング58の接触部59が載置部17に
接触して押さえリング58が熱膨張し、押さえリング5
8により基板2が載置部17の載置面に機械的に押さえ
つけられる。このため、電気的な駆動源等を用いること
なく極めて簡単な構成により基板2を載置面に押さえつ
けることができ、安価でしかも容易に基板2を載置部1
7に支持することが可能になる。この場合も、載置部1
7側を固定して押さえリング58を昇降させるようにす
ることも可能である。In the wafer support device 56 described above, the substrate 2
By elevating the placing portion 17 to position the film at the deposition position, the contact portion 59 of the holding ring 58 comes into contact with the placing portion 17 and the holding ring 58 thermally expands, and the holding ring 5
The substrate 2 is mechanically pressed against the mounting surface of the mounting portion 17 by 8. Therefore, the substrate 2 can be pressed against the mounting surface with an extremely simple configuration without using an electric drive source or the like, and the substrate 2 can be inexpensively and easily mounted.
7 can be supported. In this case also, the mounting unit 1
It is also possible to fix the 7 side and raise and lower the pressing ring 58.
【0044】[0044]
【発明の効果】請求項1の本発明のウエハ支持装置は、
ウエハが載置面に載置される支持台と、支持台に対する
昇降位置が相対的に調整されることにより載置されたウ
エハの周縁を支持台の載置面に押さえる押さえ部材と、
押さえ部材を機械的に載置面方向に押圧する押圧手段と
を備えたので、昇降位置を相対的に調整することで電気
的な駆動源等を用いることなく極めて簡単な構成により
ウエハを載置面に押さえつけることができる。従って、
安価でしかも容易にウエハを支持台に支持することが可
能になる。According to the wafer supporting apparatus of the present invention of claim 1,
A supporting table on which the wafer is mounted on the mounting surface, and a pressing member for pressing the peripheral edge of the mounted wafer to the mounting surface of the supporting table by adjusting the elevation position relative to the supporting table.
Since the pressing member that mechanically presses the pressing member toward the mounting surface is provided, the wafer can be mounted by an extremely simple structure without using an electric drive source or the like by relatively adjusting the lifting position. Can be pressed down on the surface. Therefore,
The wafer can be easily and inexpensively supported on the support base.
【0045】請求項2の本発明のウエハ支持装置は、押
さえ部材は、ウエハの上部に配されウエハの周縁部に接
触するリング状の押さえリングであり、押圧手段は、押
さえリングを下方に付勢する付勢部材であり、支持台に
対する昇降位置を相対的に調整することにより付勢部材
の付勢力に抗して押さえリングがウエハの周縁部を支持
台の載置面に押さえつけるようにしたので、押さえリン
グの昇降位置を相対的に調整することで電気的な駆動源
等を用いることなく簡単な構成の付勢部材によりウエハ
を載置面に押さえつけることができる。従って、安価で
しかも容易にウエハを支持台に支持することが可能にな
る。According to the second aspect of the wafer supporting apparatus of the present invention, the pressing member is a ring-shaped pressing ring arranged on the upper part of the wafer and in contact with the peripheral edge of the wafer, and the pressing means attaches the pressing ring downward. An urging member for urging, and by adjusting the ascending / descending position relative to the supporting table, the pressing ring presses the peripheral portion of the wafer against the mounting surface of the supporting table against the urging force of the urging member. Therefore, by relatively adjusting the lifting position of the pressing ring, the wafer can be pressed against the mounting surface by the urging member having a simple structure without using an electric drive source or the like. Therefore, the wafer can be easily and inexpensively supported on the support base.
【0046】請求項3の本発明のウエハ支持装置は、押
さえ部材は、ウエハの周縁部に接触するリング状の押さ
えリングであり、押さえリングがウエハの上部に位置し
て昇降自在に配され、押さえリングはばね部材により下
方に付勢され、押さえリングの支持台に対する相対的な
下降によりばね部材のばね力に抗して押さえリングがウ
エハの周縁部に当接することでウエハを支持台の載置面
に押さえつけるようにしたので、電気的な駆動源等を用
いることなく簡単な構成のばね部材によりウエハを載置
面に押さえつけることができる。従って、安価でしかも
容易にウエハを支持台に支持することが可能になる。According to the third aspect of the wafer supporting apparatus of the present invention, the pressing member is a ring-shaped pressing ring that contacts the peripheral edge of the wafer, and the pressing ring is located above the wafer and is vertically movable. The pressing ring is urged downward by a spring member, and the relative lowering of the pressing ring with respect to the support table causes the pressing ring to abut against the peripheral edge of the wafer against the spring force of the spring member, thereby mounting the wafer on the support table. Since the wafer is pressed against the mounting surface, the wafer can be pressed against the mounting surface by the spring member having a simple structure without using an electric drive source or the like. Therefore, the wafer can be easily and inexpensively supported on the support base.
【0047】本発明の半導体製造装置は、請求項1乃至
請求項3のいずれか一項に記載のウエハ支持装置に支持
されたウエハに処理を施す処理手段を備えたので、安価
でしかも容易にウエハを支持台に支持することができる
ウエハ支持装置を備えた半導体製造装置とすることが可
能になる。Since the semiconductor manufacturing apparatus of the present invention includes the processing means for processing the wafer supported by the wafer supporting apparatus according to any one of claims 1 to 3, it is inexpensive and easy. It is possible to provide a semiconductor manufacturing apparatus equipped with a wafer supporting device capable of supporting a wafer on a support base.
【0048】また、本発明の半導体製造装置は、成膜室
内に配置される請求項1乃至請求項3のいずれか一項に
記載のウエハ支持装置と、成膜室内にプラズマを生成し
そこで励起・活性化された粒子によりウエハの表面に薄
膜形成処理を施す処理手段とを備えたので、安価でしか
も容易にウエハを支持台に支持することができるウエハ
支持装置を備えた半導体製造装置とすることが可能にな
る。Further, the semiconductor manufacturing apparatus of the present invention includes the wafer supporting apparatus according to any one of claims 1 to 3 arranged in the film forming chamber, and plasma is generated and excited therein in the film forming chamber. A semiconductor manufacturing apparatus equipped with a wafer supporting device, which is inexpensive and can easily support the wafer on a supporting table, because it has a processing means for performing a thin film forming process on the surface of the wafer with activated particles. It will be possible.
【図1】本発明の第1実施形態例に係るウエハ支持装置
を備えた半導体製造装置の全体構成図。FIG. 1 is an overall configuration diagram of a semiconductor manufacturing apparatus including a wafer supporting apparatus according to a first embodiment example of the present invention.
【図2】半導体製造装置における成膜装置(プラズマC
VD装置)の一例を表す概略側面図。FIG. 2 is a film forming apparatus (plasma C) in a semiconductor manufacturing apparatus.
A schematic side view showing an example of a VD device).
【図3】成膜装置の他の例を表す概略側面図。FIG. 3 is a schematic side view showing another example of a film forming apparatus.
【図4】ウエハ支持装置の斜視図。FIG. 4 is a perspective view of a wafer support device.
【図5】基板を支持した状態のウエハ支持装置の断面
図。FIG. 5 is a cross-sectional view of the wafer support device supporting a substrate.
【図6】他の実施形態例の押圧手段を表す要部断面図。FIG. 6 is a cross-sectional view of an essential part showing a pressing unit according to another embodiment.
【図7】本発明の第2実施形態例に係るウエハ支持装置
の断面図。FIG. 7 is a sectional view of a wafer supporting apparatus according to a second embodiment of the present invention.
【図8】本発明の第3実施形態例に係るウエハ支持装置
の断面図。FIG. 8 is a sectional view of a wafer supporting apparatus according to a third embodiment of the present invention.
1 半導体製造装置 2 ウエハ(基板) 3 保管室 5 ロボット 6 搬送室 7 成膜装置 8,46,56 ウエハ支持装置 9 ゲート 11 基部 12 チャンバ 13 成膜室 14 天井板 16 押さえ部材 17 載置部 18 支持軸 19 電磁石 20 鉄心 21 コイル 22 三相インバータ電源 23 高周波アンテナ 24,33 整合器 25 高周波電源 26 ガス供給ノズル 27 補助ガス供給ノズル 30 排気口 31 銅板部材 32 プラズマアンテナ 34 電源 35 ノズル 36 流量制御器 37 Cl2 ガスプラズマ 38 前駆体(CuxCly) 41,47,57 支柱 42 固定リング 43,49,58 押さえリング 44,49 圧縮コイルばね 51 ボール部材 52 ばね部材 59 接触部1 Semiconductor Manufacturing Equipment 2 Wafer (Substrate) 3 Storage Room 5 Robot 6 Transfer Room 7 Film Forming Equipment 8, 46, 56 Wafer Supporting Device 9 Gate 11 Base 12 Chamber 13 Film Forming Room 14 Ceiling Board 16 Pressing Member 17 Placement Section 18 Support shaft 19 Electromagnet 20 Iron core 21 Coil 22 Three-phase inverter power supply 23 High-frequency antenna 24, 33 Matching device 25 High-frequency power supply 26 Gas supply nozzle 27 Auxiliary gas supply nozzle 30 Exhaust port 31 Copper plate member 32 Plasma antenna 34 Power supply 35 Nozzle 36 Flow controller 37 Cl 2 gas plasma 38 precursor (CuxCly) 41, 47, 57 support 42 fixing ring 43, 49, 58 pressing ring 44, 49 compression coil spring 51 ball member 52 spring member 59 contact portion
───────────────────────────────────────────────────── フロントページの続き (72)発明者 八幡 直樹 兵庫県高砂市荒井町新浜二丁目1番1号 三菱重工業株式会社高砂研究所内 Fターム(参考) 4K030 CA04 CA12 FA03 GA02 5F031 CA02 DA01 FA01 FA07 FA11 FA12 GA02 HA07 HA25 HA28 HA37 HA38 MA28 MA29 MA32 NA05 NA20 PA30 5F045 AA08 AB02 AB40 AC01 AC05 AC16 DP04 DQ10 EM03 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Naoki Yawata 2-1-1 Niihama, Arai-cho, Takasago City, Hyogo Prefecture Takasago Laboratory, Mitsubishi Heavy Industries, Ltd. F-term (reference) 4K030 CA04 CA12 FA03 GA02 5F031 CA02 DA01 FA01 FA07 FA11 FA12 GA02 HA07 HA25 HA28 HA37 HA38 MA28 MA29 MA32 NA05 NA20 PA30 5F045 AA08 AB02 AB40 AC01 AC05 AC16 DP04 DQ10 EM03
Claims (5)
支持台に対する昇降位置が相対的に調整されることによ
り載置されたウエハの周縁を支持台の載置面に押さえる
押さえ部材と、押さえ部材を機械的に載置面方向に押圧
する押圧手段とを備えたことを特徴とするウエハ支持装
置。1. A support base on which a wafer is mounted on a mounting surface,
A pressing member that presses the peripheral edge of the mounted wafer against the mounting surface of the supporting table by adjusting the elevation position relative to the supporting table, and a pressing unit that mechanically presses the pressing member in the mounting surface direction. A wafer supporting device comprising:
ハの上部に配されウエハの周縁部に接触するリング状の
押さえリングであり、押圧手段は、押さえリングを下方
に付勢する付勢部材であり、支持台に対する昇降位置を
相対的に調整することにより付勢部材の付勢力に抗して
押さえリングがウエハの周縁部を支持台の載置面に押さ
えつけることを特徴とするウエハ支持装置。2. The pressing member according to claim 1, wherein the pressing member is a ring-shaped pressing ring that is arranged on an upper portion of the wafer and is in contact with a peripheral edge portion of the wafer, and the pressing means urges the pressing ring downward. A wafer support device characterized in that the holding ring presses the peripheral edge of the wafer against the mounting surface of the support table against the urging force of the urging member by adjusting the elevation position relative to the support table. .
ハの周縁部に接触するリング状の押さえリングであり、
押さえリングがウエハの上部に位置して昇降自在に配さ
れ、押さえリングはばね部材により下方に付勢され、押
さえリングの支持台に対する相対的な下降によりばね部
材のばね力に抗して押さえリングがウエハの周縁部に当
接することでウエハを支持台の載置面に押さえつけるこ
とを特徴とするウエハ支持装置。3. The pressing member according to claim 1, wherein the pressing member is a ring-shaped pressing ring that comes into contact with a peripheral portion of the wafer,
The pressing ring is located above the wafer and is movable up and down. The pressing ring is biased downward by a spring member, and the pressing ring is lowered relative to the support base to resist the spring force of the spring member. The wafer supporting device is characterized in that the wafer presses the wafer against the mounting surface of the support table by contacting the peripheral edge of the wafer.
記載のウエハ支持装置に支持されたウエハに処理を施す
処理手段を備えたことを特徴とする半導体製造装置。4. A semiconductor manufacturing apparatus comprising a processing means for processing a wafer supported by the wafer supporting apparatus according to claim 1.
項3のいずれか一項に記載のウエハ支持装置と、成膜室
内にプラズマを生成しそこで励起・活性化された粒子に
よりウエハの表面に薄膜形成処理を施す処理手段とを備
えたことを特徴とする半導体製造装置。5. The wafer supporting device according to claim 1, which is arranged in a film forming chamber, and a wafer generated by plasma generated in the film forming chamber and excited / activated by the particles. And a processing means for performing a thin film forming process on the surface of the semiconductor manufacturing apparatus.
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JP2001348335A JP3771833B2 (en) | 2001-11-14 | 2001-11-14 | Wafer support apparatus and semiconductor manufacturing apparatus |
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JP3771833B2 JP3771833B2 (en) | 2006-04-26 |
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