JP2003152059A - Wafer supporting apparatus and semiconductor manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To support a substrate 2 on a placement section 17 easily at a low cost. SOLUTION: By raising the placement section 17 to position the substrate 2 at a film formation position, the substrate 2 is mechanically pressed against a placement face of the placement section 17 by means of a presser ring 43 energized by a compression coil spring 44. Due to this structure, the substrate 2 is pressed against the placement face by a simple structure without using an electrical driving source or the like, and thereby the substrate 2 is supported on the placement section 17 easily at a low cost.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer supporting device for supporting a wafer (substrate) for manufacturing a semiconductor and a semiconductor manufacturing device for performing processing such as film formation on the substrate.

[0002]

2. Description of the Related Art Currently, in manufacturing semiconductors, plasma CV is used.
Film formation using a D (Chemical Vapor Deposition) apparatus is known. A plasma CVD apparatus is an apparatus for introducing a material gas, which is a material for a film, into a film forming chamber to bring it into a plasma state, and promoting a chemical reaction on a substrate surface by active excited atoms in the plasma to form a film. Is. The plasma CVD apparatus includes a wafer supporting device having a substrate supporting portion for supporting the substrate in the film forming chamber.

The substrate supporting portion of the wafer supporting device is made of ceramics having the function of an electrostatic chuck, and is designed to have an electrostatic force to attract the substrate. Thus, by controlling the temperature of the substrate supporting portion, heat can be efficiently transferred to the substrate, and the temperature of the substrate can be efficiently controlled.

[0004]

A wafer supporting device in a conventional semiconductor manufacturing apparatus (plasma CVD apparatus) is very expensive because it has a ceramic substrate supporting portion having an electrostatic chuck function. Therefore, the cost as a consumable item was high. Further, since the substrate supporting portion is a ceramic sintered material, it is fragile and easily broken by impact, and there is a problem that the thermal expansion coefficient is large and there is a risk of damage if controlled in a wide temperature range.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wafer supporting apparatus which is inexpensive and can easily support a substrate.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor manufacturing apparatus equipped with a wafer supporting device which is inexpensive and can easily support a substrate.

[0007]

In order to achieve the above object, the structure of a wafer supporting apparatus of the present invention is such that a supporting table on which a wafer is mounted and a vertical position relative to the supporting table are adjusted relative to each other. It is characterized by further comprising: a pressing member for pressing the peripheral edge of the mounted wafer against the mounting surface of the support base, and a pressing means for mechanically pressing the pressing member in the mounting surface direction.

The pressing member is a ring-shaped pressing ring which is arranged on the upper part of the wafer and is in contact with the peripheral edge of the wafer. The pressing means is a biasing member which biases the pressing ring downward. The holding ring presses the peripheral edge of the wafer against the mounting surface of the support base against the biasing force of the biasing member by adjusting the elevation position relative to the support.

The pressing member is a ring-shaped pressing ring that contacts the peripheral edge of the wafer. The pressing ring is located above the wafer and is vertically movable. The pressing ring is urged downward by a spring member. The pressing ring is brought into contact with the peripheral edge of the wafer against the spring force of the spring member by the relative lowering of the pressing ring with respect to the supporting table, thereby pressing the wafer against the mounting surface of the supporting table.

The structure of the semiconductor manufacturing apparatus of the present invention for attaining the above object comprises a processing means for processing a wafer supported by the wafer supporting apparatus according to any one of claims 1 to 3. It is characterized by having.

A semiconductor manufacturing apparatus according to the present invention for achieving the above object comprises a wafer supporting apparatus according to any one of claims 1 to 3 arranged in a film forming chamber. It is characterized by comprising a processing means for generating a plasma in the film chamber and performing a thin film forming process on the surface of the wafer by the particles excited and activated therein.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an overall configuration of a semiconductor manufacturing apparatus equipped with a wafer supporting apparatus according to a first embodiment of the present invention, and FIG. 2 is a film forming apparatus (plasma CVD apparatus) in the semiconductor manufacturing apparatus. 3 is a schematic side view showing an example of the film forming apparatus, FIG. 3 is a schematic side view showing another example of the film forming apparatus, FIG. 4 is a perspective view of the wafer supporting apparatus, and FIG. 5 is a cross section of the wafer supporting apparatus supporting the substrate. FIG. 6 shows a cross section of a main part of a pressing means according to another embodiment. Further, FIG. 7 shows a cross section of the wafer supporting device according to the second embodiment of the present invention, and FIG. 8 shows a cross section of the wafer supporting device according to the third embodiment of the present invention.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1 is
Storage room 3 where a large number of wafers (substrates) 2 are stored under atmospheric pressure
The substrate 2 stored in the storage chamber 3 is transferred to the transfer chamber 6 by the transfer means such as the robot 5. After the transfer chamber 6 is set to a vacuum atmosphere, the substrate 2 is transferred from the transfer chamber 6 to the wafer support device 8 of the film forming apparatus 7 and positioned and placed at a predetermined position. A gate 9 for maintaining an internal pressure is provided between the storage chamber 3 and the transfer chamber 6 and between the transfer chamber 6 and the film forming apparatus 7.

The film forming apparatus 7 will be described. As shown in FIG. 2, a cylindrical chamber 12 is provided in the base 11, and a film forming chamber 13 is formed in the chamber 12. A circular ceiling plate 14 is provided above the chamber 12, and a film forming chamber 13 at the center of the chamber 12 is provided with a wafer supporting device 8. The wafer supporting device 8 is provided with a mounting portion 17 as a supporting base on which the substrate 2 is mounted, and the mounting portion 17 is supported by a support shaft 18 which is expandable and contractible. The mounting portion 7 is
The vertical height can be adjusted to an optimum height by expanding and contracting the support shaft 18. The wafer support device 8 includes
A holding member 16 is provided for mechanically pressing the substrate 2 against the mounting surface of the mounting portion 7 when the mounting portion 7 is adjusted to an optimum height.

On the ceiling plate 14, for example, a circular ring-shaped high frequency antenna 23 is arranged.
A high-frequency power source 25 is connected to 3 via a matching unit 24. By supplying electric power to the high frequency antenna 23, electromagnetic waves enter the film forming chamber 13 of the chamber 12. The electromagnetic wave that has entered the chamber 12 ionizes the gas in the film forming chamber 13 to generate plasma.

The chamber 12 is provided with a gas supply nozzle 26 for supplying a material gas such as silane (SiH ₄ ) and the like.
The material gas that becomes Si) is supplied. Also, the chamber 12
Is provided with an auxiliary gas supply nozzle 27 for supplying an auxiliary gas such as argon, and the base 11 is provided with an exhaust port 30 connected to a vacuum exhaust system (not shown) for exhausting the inside of the chamber 12. There is.

In the plasma CVD apparatus described above, the substrate 2 is placed on the placing portion 17 of the wafer supporting device 8, and the placing portion 7 is placed.
When the substrate is adjusted to the optimum height, the substrate 2 holds the pressing member 16
Is mechanically pressed against the mounting surface of the mounting portion 7. The mounting portion 7 is provided with temperature control means (not shown) including a heater and a refrigerant passage, and the substrate 2 pressed against the mounting portion 7
Is efficiently temperature controlled.

A material gas having a predetermined flow rate is supplied from the gas supply nozzle 26 into the film forming chamber 13, and an auxiliary gas having a treatment flow rate is supplied into the film forming chamber 13 from the auxiliary gas supply nozzle 27.
The inside of the film forming chamber 13 is set to a predetermined pressure according to the film forming conditions.
Then, the high frequency power supply 25 supplies power to the high frequency antenna 23 to generate a high frequency. At the same time, a voltage is applied from the three-phase inverter power supply 22 to the electromagnet 19, and the film formation chamber 1
A rotating magnetic field is generated in 3.

As a result, the material gas in the film forming chamber 13 becomes a plasma state. This plasma collides with other neutral molecules in the material gas and further ionizes or excites the neutral molecules. The active particles generated in this way approach the surface of the substrate 2 to efficiently cause a chemical reaction, and are deposited to form a CVD film. That is, the function of performing film formation by plasma is configured as the processing means. Although an apparatus for performing film formation by plasma is taken as an example, an apparatus for performing other processing such as etching other than film formation can be applied.

Another example of the film forming apparatus will be described with reference to FIG. In the film forming apparatus shown in FIG. 3, a metal such as
It is an example of a copper film forming apparatus for forming a thin film of Cu. The same members as those shown in FIG. 2 are designated by the same reference numerals, and the duplicated description is omitted.

The chamber 12 is made of an insulating material, for example, ceramics, and the mounting portion 17 has a predetermined temperature (for example, the substrate 3 is 100 ° C. to 2 ° C.) by a temperature control means (not shown).
The temperature is maintained at 00 ° C). The upper surface of the chamber 12 is an opening, and the opening is closed by a copper plate member 31 as a member to be etched made of metal.
The inside of the chamber 12 closed by the copper plate member 31 is maintained at a predetermined pressure. The copper plate member 31 is provided with a temperature control means (not shown) such as a heater, for example, 200 ° C.
The temperature is controlled to about 400 ° C.

A plasma antenna 32 as a coiled coil antenna is provided around the cylindrical portion of the chamber 12,
A matching unit 33 and a power source 34 are connected to the plasma antenna 32 to supply power.

The chamber 12 below the copper plate member 31.
A nozzle for supplying a source gas containing chlorine (halogen) (Cl ₂ gas diluted with He, Ar, etc., with a chlorine concentration of ≦ 50%, preferably about 10%) into the cylindrical part of the chamber 12. 35 is connected. The nozzle 35 opens horizontally, and the raw material gas is sent to the nozzle 35 via a flow rate controller 36. As the halogen contained in the source gas, it is possible to apply fluorine (F), bromine (Br), iodine (I), or the like.

[0024] In the above-mentioned copper film forming apparatus, a raw material gas was supplied from the nozzle 35 into the chamber 12, and electromagnetic waves are shot from the plasma antenna 32 is into the chamber 12, Cl ₂ gas is ionized Cl ₂ A gas plasma (source gas plasma) 37 is generated. Cl ₂ gas plasma 3
7, an etching reaction occurs in the copper plate member 31, and a precursor (CuxCly) 38 is generated. At this time, the copper plate member 3
1 is maintained at a temperature higher than the temperature of the substrate 2 (for example, 200 ° C. to 400 ° C.) by a temperature control unit (not shown).

The precursor (CuxCly) 38 generated inside the chamber 12 is carried to the substrate 2 whose temperature is controlled to be lower than that of the copper plate member 31. Precursor (Cu
The xCly) 38 is converted into only Cu ions by the reduction reaction and is applied to the substrate 2 to form a Cu thin film on the surface of the substrate 2.

The reaction at this time can be expressed by the following equation. 2Cu + Cl ₂ → 2CuCl → 2Cu ↓ + Cl ₂ ↑ Exhaust port 3 for gases and etching products not involved in the reaction
Exhausted from 0.

Although Cl ₂ gas diluted with He, Ar or the like has been described as an example of the source gas, Cl ₂ gas may be used alone or HCl gas may be applied. Further, the material of the copper plate member 31 is not limited to copper (Cu), and if it is a halide-forming metal, preferably a chloride-forming metal,
It is possible to use Al, Ag, Au, Pt, Ta, Ti, W, Si and the like.
In this case, the precursor is a halide (chloride) of Ag, Au, Pt, Ta, Ti, W, etc., and the thin film formed on the surface of the substrate 2 is
Al, Ag, Au, Pt, Ta, Ti, W, Si, etc.

The wafer supporting device 8 will be described in detail with reference to FIGS. 4 and 5.

As shown in the figure, the wafer supporting device 8 is a circle larger than the substrate 2 and is composed of a mounting portion 17 made of, for example, a Teflon (registered trademark) type fluorine compound and a supporting shaft 18. Elevating pins (not shown) are provided on the mounting surface of the mounting portion 17. When the substrate 2 is carried in, the lifting pins are raised with respect to the mounting surface of the mounting portion 17, and the substrate 2 is placed on the lifting pins and adjusted to a predetermined position before the lifting pins are lowered. Then, the substrate 2 is mounted on the mounting surface of the mounting portion 17. A guide around which the peripheral edge of the substrate 2 fits is provided around the mounting surface of the mounting portion 17, and the peripheral edge of the substrate 2 fits into the guide by the lowering of the elevating pin and is placed at a predetermined position. still,
The elevating pin may be configured to be moved up and down relatively with respect to the mounting surface when the mounting portion 17 is moved up and down.

A plurality of (for example, 3
The column 41 is fixed, and a fixing ring 42 is attached to the top of the column 41. A pressing ring 43 is supported on the column 41 below the fixed ring 42 so as to be vertically movable. The diameter of the inner peripheral edge of the pressing ring 43 is the substrate 2
Is formed to have a size slightly smaller than the outer diameter (for example, a radius of about 3 mm). A compression coil spring 44 is provided on the column 41 between the fixed ring 42 and the pressing ring 43, and both ends of the compression coil spring 44 are fixed to the fixed ring 42 and the pressing ring 43, respectively. The pressing ring 43 is biased downward by the compression coil spring 44.

In the wafer supporting device 8 having the above structure, the substrate 2 is loaded from between the plurality of columns 41, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position.
When the support shaft 18 extends and the mounting portion 17 rises to position the substrate 2 at the film formation position, the pressing ring 43 contacts the peripheral edge of the substrate 2 mounted on the mounting surface. At this time, a force on the compression side acts on the compression coil spring 44. As a result, the peripheral edge of the substrate 2 (for example, about 3 mm) is mechanically pressed against the mounting surface by the pressing ring 43 by the spring force (see FIG. 5). The substrate 2 is a compression coil spring 44.
Since it is pressed against the mounting surface via the pressing ring 43 by the spring force, the warp and the dimensional error can be absorbed even when the substrate 2 has the warp and the dimensional error.

In the above-described wafer support device 8, the substrate 2 is placed by the pressing ring 43 urged by the compression coil spring 44 by raising the placing portion 17 to position the substrate 2 at the film forming position. It is mechanically pressed against the mounting surface of the part 17. For this reason, the substrate 2 can be pressed against the mounting surface with a simple configuration without using an electric drive source or the like, and the substrate 2 can be mounted at low cost and easily.
Will be able to support.

In the plasma CVD apparatus shown in FIG. 2 and the film forming apparatus shown in FIG. 3, the semiconductor provided with the wafer supporting device 8 that can easily and inexpensively support the substrate 2 on the mounting portion 17 is provided. It becomes possible to make it a manufacturing apparatus.

Although the fixing ring 42 is attached to the top of the support column 41 to integrally form the plurality of support columns 41, a flange for receiving the compression coil spring 44 on the top of the support column 41 instead of the fixing ring 42. Etc. can be provided. In addition, the mounting portion 17 is fixed, and the support columns 41,
It is also possible to raise and lower the fixing ring 42 and the pressing ring 43.

Further, as shown in FIG.
Instead of 3, the ball member 51 facing the lower part from the lower surface of the fixing ring 42 may be provided, and the ball member 51 may be biased downward by the spring member 52 (pressing means). In this case, by raising the mounting portion 17, the ball member 51 urged by the spring member 52 causes the substrate 2 to move.
Are mechanically pressed against the mounting surface of the mounting portion 17. When the ball member 51 is used, even if there is relative movement in the circumferential direction between the fixed ring 42 and the substrate 2, it can be absorbed by the rotation of the ball member 51.

A second embodiment of the wafer support device will be described with reference to FIG. The same members as those shown in FIGS. 4 and 5 are designated by the same reference numerals, and duplicate description is omitted.

The wafer support device 46 of the second embodiment is
A plurality of (for example, three) struts 4 are provided outside the mounting portion 17.
7 is movably supported with respect to the chamber 12, and the support 4
A pressing ring 48 is attached to the top of 7.
The diameter of the inner peripheral edge of the pressing ring 48 is formed to be slightly smaller than the outer diameter of the substrate 2 (for example, the radius is about 3 mm smaller). Post 4 penetrating outside chamber 12
A compression coil spring 49 that urges the support column 47 downward is attached between 7 and the chamber 12 side.

In the wafer supporting device 46 having the above structure, the substrate 2 is loaded from between the plurality of columns 48, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position. When the support shaft 18 extends to raise the mounting portion 17 to position the substrate 2 at the film forming position, the pressing ring 48 contacts the peripheral edge of the substrate 2 mounted on the mounting surface. At this time, a force on the compression side acts on the compression coil spring 49. As a result, a pressing force is applied to the pressing ring 48 via the support column 48, and the peripheral edge (for example, about 3 mm) of the substrate 2 is mechanically pressed to the mounting surface by the pressing ring 48. Since the substrate 2 is pressed against the mounting surface by the spring force of the compression coil spring 49 via the pressing ring 48, even if the substrate 2 has a warp or a dimensional error, the warp or the dimensional error can be absorbed.

In the wafer support device 46 described above, the substrate 2
The column 47 is urged by the compression coil spring 49 by raising the mounting portion 17 to position the film at the film forming position.
The substrate 2 is mechanically pressed against the mounting surface of the mounting portion 17 by the pressing ring 48. Therefore, the substrate 2 can be pressed against the mounting surface with a simple configuration without using an electric drive source, and the substrate 2 can be easily and inexpensively supported on the mounting portion 17.

A third embodiment of the wafer supporting apparatus will be described with reference to FIG. The same members as those shown in FIGS. 4 to 7 are designated by the same reference numerals, and duplicate explanations are omitted.

The wafer support device 56 of the third embodiment is
A plurality of (for example, three) support columns 5 are provided outside the mounting portion 17.
7 is fixed to the chamber 12, and a pressing ring 58 composed of a thermal expansion member (eg, SiO ₂ ) is provided on the top of the column 57.
Is attached. The pressing ring 58 is in contact with the temperature-controlled mounting portion 17 and expands when the temperature rises due to heat transfer. Therefore, the pressing ring 58 is provided with a contact portion 59 that comes into contact with the mounting portion 17. The diameter of the inner peripheral edge of the pressing ring 58 is formed to be slightly smaller than the outer diameter of the substrate 2 (for example, the radius is about 3 mm smaller). The height of the pressing ring 58 is
The pressing ring 58 is set to a height at which the pressing ring 58 abuts the upper surface of the substrate 2 when the mounting portion 17 moves up and the substrate 2 is positioned at the film formation position.

In the wafer supporting device 56 having the above-described structure, the substrate 2 is loaded from between the plurality of columns 57, and the substrate 2 is mounted on the mounting surface of the mounting portion 17 and positioned at a predetermined position. When the support shaft 18 extends and the mounting portion 17 rises to position the substrate 2 at the film forming position, the contact portion 59 of the pressing ring 58 contacts the mounting portion 17 and is mounted on the mounting surface. The pressing ring 58 contacts the peripheral edge of the substrate 2.
When the contact portion 59 contacts the mounting portion 17, the mounting portion 17
The heat from the transfer to the pressing ring 58 and the pressing ring 5
8 thermally expands. As a result, a pressing force is generated on the pressing ring 58, and the peripheral edge (for example, about 3 mm) of the substrate 2 is mechanically pressed against the mounting surface by the pressing ring 58.

In the wafer support device 56 described above, the substrate 2
By elevating the placing portion 17 to position the film at the deposition position, the contact portion 59 of the holding ring 58 comes into contact with the placing portion 17 and the holding ring 58 thermally expands, and the holding ring 5
The substrate 2 is mechanically pressed against the mounting surface of the mounting portion 17 by 8. Therefore, the substrate 2 can be pressed against the mounting surface with an extremely simple configuration without using an electric drive source or the like, and the substrate 2 can be inexpensively and easily mounted.
7 can be supported. In this case also, the mounting unit 1
It is also possible to fix the 7 side and raise and lower the pressing ring 58.

[0044]

According to the wafer supporting apparatus of the present invention of claim 1,
A supporting table on which the wafer is mounted on the mounting surface, and a pressing member for pressing the peripheral edge of the mounted wafer to the mounting surface of the supporting table by adjusting the elevation position relative to the supporting table.
Since the pressing member that mechanically presses the pressing member toward the mounting surface is provided, the wafer can be mounted by an extremely simple structure without using an electric drive source or the like by relatively adjusting the lifting position. Can be pressed down on the surface. Therefore,
The wafer can be easily and inexpensively supported on the support base.

According to the second aspect of the wafer supporting apparatus of the present invention, the pressing member is a ring-shaped pressing ring arranged on the upper part of the wafer and in contact with the peripheral edge of the wafer, and the pressing means attaches the pressing ring downward. An urging member for urging, and by adjusting the ascending / descending position relative to the supporting table, the pressing ring presses the peripheral portion of the wafer against the mounting surface of the supporting table against the urging force of the urging member. Therefore, by relatively adjusting the lifting position of the pressing ring, the wafer can be pressed against the mounting surface by the urging member having a simple structure without using an electric drive source or the like. Therefore, the wafer can be easily and inexpensively supported on the support base.

According to the third aspect of the wafer supporting apparatus of the present invention, the pressing member is a ring-shaped pressing ring that contacts the peripheral edge of the wafer, and the pressing ring is located above the wafer and is vertically movable. The pressing ring is urged downward by a spring member, and the relative lowering of the pressing ring with respect to the support table causes the pressing ring to abut against the peripheral edge of the wafer against the spring force of the spring member, thereby mounting the wafer on the support table. Since the wafer is pressed against the mounting surface, the wafer can be pressed against the mounting surface by the spring member having a simple structure without using an electric drive source or the like. Therefore, the wafer can be easily and inexpensively supported on the support base.

Since the semiconductor manufacturing apparatus of the present invention includes the processing means for processing the wafer supported by the wafer supporting apparatus according to any one of claims 1 to 3, it is inexpensive and easy. It is possible to provide a semiconductor manufacturing apparatus equipped with a wafer supporting device capable of supporting a wafer on a support base.

Further, the semiconductor manufacturing apparatus of the present invention includes the wafer supporting apparatus according to any one of claims 1 to 3 arranged in the film forming chamber, and plasma is generated and excited therein in the film forming chamber. A semiconductor manufacturing apparatus equipped with a wafer supporting device, which is inexpensive and can easily support the wafer on a supporting table, because it has a processing means for performing a thin film forming process on the surface of the wafer with activated particles. It will be possible.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of a semiconductor manufacturing apparatus including a wafer supporting apparatus according to a first embodiment example of the present invention.

FIG. 2 is a film forming apparatus (plasma C) in a semiconductor manufacturing apparatus.
A schematic side view showing an example of a VD device).

FIG. 3 is a schematic side view showing another example of a film forming apparatus.

FIG. 4 is a perspective view of a wafer support device.

FIG. 5 is a cross-sectional view of the wafer support device supporting a substrate.

FIG. 6 is a cross-sectional view of an essential part showing a pressing unit according to another embodiment.

FIG. 7 is a sectional view of a wafer supporting apparatus according to a second embodiment of the present invention.

FIG. 8 is a sectional view of a wafer supporting apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

1 Semiconductor Manufacturing Equipment 2 Wafer (Substrate) 3 Storage Room 5 Robot 6 Transfer Room 7 Film Forming Equipment 8, 46, 56 Wafer Supporting Device 9 Gate 11 Base 12 Chamber 13 Film Forming Room 14 Ceiling Board 16 Pressing Member 17 Placement Section 18 Support shaft 19 Electromagnet 20 Iron core 21 Coil 22 Three-phase inverter power supply 23 High-frequency antenna 24, 33 Matching device 25 High-frequency power supply 26 Gas supply nozzle 27 Auxiliary gas supply nozzle 30 Exhaust port 31 Copper plate member 32 Plasma antenna 34 Power supply 35 Nozzle 36 Flow controller 37 Cl ₂ gas plasma 38 precursor (CuxCly) 41, 47, 57 support 42 fixing ring 43, 49, 58 pressing ring 44, 49 compression coil spring 51 ball member 52 spring member 59 contact portion

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Naoki Yawata             2-1-1 Niihama, Arai-cho, Takasago City, Hyogo Prefecture             Takasago Laboratory, Mitsubishi Heavy Industries, Ltd. F-term (reference) 4K030 CA04 CA12 FA03 GA02                 5F031 CA02 DA01 FA01 FA07 FA11                       FA12 GA02 HA07 HA25 HA28                       HA37 HA38 MA28 MA29 MA32                       NA05 NA20 PA30                 5F045 AA08 AB02 AB40 AC01 AC05                       AC16 DP04 DQ10 EM03

Claims (5)

[Claims] 1. A support base on which a wafer is mounted on a mounting surface,
A pressing member that presses the peripheral edge of the mounted wafer against the mounting surface of the supporting table by adjusting the elevation position relative to the supporting table, and a pressing unit that mechanically presses the pressing member in the mounting surface direction. A wafer supporting device comprising: 2. The pressing member according to claim 1, wherein the pressing member is a ring-shaped pressing ring that is arranged on an upper portion of the wafer and is in contact with a peripheral edge portion of the wafer, and the pressing means urges the pressing ring downward. A wafer support device characterized in that the holding ring presses the peripheral edge of the wafer against the mounting surface of the support table against the urging force of the urging member by adjusting the elevation position relative to the support table. . 3. The pressing member according to claim 1, wherein the pressing member is a ring-shaped pressing ring that comes into contact with a peripheral portion of the wafer,
The pressing ring is located above the wafer and is movable up and down. The pressing ring is biased downward by a spring member, and the pressing ring is lowered relative to the support base to resist the spring force of the spring member. The wafer supporting device is characterized in that the wafer presses the wafer against the mounting surface of the support table by contacting the peripheral edge of the wafer. 4. A semiconductor manufacturing apparatus comprising a processing means for processing a wafer supported by the wafer supporting apparatus according to claim 1. 5. The wafer supporting device according to claim 1, which is arranged in a film forming chamber, and a wafer generated by plasma generated in the film forming chamber and excited / activated by the particles. And a processing means for performing a thin film forming process on the surface of the semiconductor manufacturing apparatus.