JP2021504672A - 二フィルタ光検出デバイスおよびそれに関連する方法 - Google Patents
二フィルタ光検出デバイスおよびそれに関連する方法 Download PDFInfo
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- JP2021504672A JP2021504672A JP2019571232A JP2019571232A JP2021504672A JP 2021504672 A JP2021504672 A JP 2021504672A JP 2019571232 A JP2019571232 A JP 2019571232A JP 2019571232 A JP2019571232 A JP 2019571232A JP 2021504672 A JP2021504672 A JP 2021504672A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/448—Array [CCD]
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- G—PHYSICS
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G01N2021/0325—Cells for testing reactions, e.g. containing reagents
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- G—PHYSICS
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
- G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
-
- G—PHYSICS
- G01—MEASURING; TESTING
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N2021/6463—Optics
- G01N2021/6471—Special filters, filter wheel
Abstract
Description
簡単な記載
図面
本開示の態様ならびにその一定の例、特長、利益、および詳細は、添付の図面において例示する非制限的な例を参照して、以下により一層十分に説明する。関連する詳細をいたずらに不明瞭にしないように、よく知られる材料、製造ツール、処理技術、等の説明は省略する。しかし、詳細な説明および特定の例は、本開示の態様を示す一方で、例示のためだけに与え、および制限のためではないことを理解すべきである。基礎となる発明の概念の精神および/または範囲内の様々な置換、修飾、付加、および/またはアレンジメントは、この開示から本技術において熟練する者(当業者とも言う)には明らかであろう。
Claims (20)
- デバイスであって、次の:
反応溶液、および反応溶液による処理後入射励起光に応答して光放射を生じる複数の反応サイトを含むための反応構造であり、反応構造はデバイスベース上に配置されるもの;
デバイスベース内の複数の光センサ;
光センサによって検出される光子に基づいてデータ信号を送信するために複数の光センサに電気的に連結されるデバイスベース内のデバイスサーキトリー;および
励起光および少なくとも一の対応する反応サイトからの光放射を受け取るための入力領域を有する複数の光ガイドであり、光ガイドは入力領域から少なくとも一の対応する光センサに向かってデバイスベース中に延びるもの
を含み、
そこで各々の複数の光ガイドには、少なくとも第一の波長の励起光をフィルタリングし、および第二の波長の光放射が少なくとも一の対応する光センサにまでそれを通過するのを許すために第一のフィルタ物質で形成される第一のフィルタ領域、および少なくとも第一の波長の励起光をフィルタリングし、および第三の波長の光放射が少なくとも一の対応する光センサにまでそれを通過するのを許すために第二のフィルタ物質で形成される第二のフィルタ領域が含まれる、デバイス。 - 第一のフィルタ領域の底部分の下および周りに延びる光ガイドの底部分内に支持層がさらに含まれる、請求項1のデバイス。
- 支持層は、酸化物、窒化物、またはそれらの組合せから構成される、請求項2のデバイス。
- 光ガイドの第二のフィルタ領域は支持層の上および第一のフィルタ領域の周りに延びる、請求項2のデバイス。
- 第一および第二のフィルタ領域は光ガイドの入力領域を形成する、請求項4のデバイス。
- 支持層と光ガイドの底部分でのデバイスサーキトリーとの間に配置され、および光ガイドの上部分内の第二のフィルタ領域デバイスサーキトリー間に配置される第二のライナ層がさらに含まれる、請求項2のデバイス。
- 第二のライナ層には、窒化ケイ素シールド層が含まれる、請求項6のデバイス。
- 第一のフィルタ物質は第三の波長の光放射をさらにフィルタリングし、および第二のフィルタ物質は第二の波長の光放射をさらにフィルタリングする、請求項1のデバイス。
- 第一のフィルタ物質は第一のダイを伴うポリマ物質であり、および第二のフィルタ物質は第一のダイとは異なる第二のダイを伴うポリマ物質である、請求項1のデバイス。
- 各々の複数の反応サイトは、反応構造の反応リセス内の反応構造に固定化される、請求項1のデバイス。
- 反応溶液は、反応を惹起し、および/または反応サイトにて、入射励起光に応答して第二および第三の波長の光放射を生じる反応生産物を形成する、請求項10のデバイス。
- 反応サイトには、少なくとも一の被分析物が含まれ、およびそこで反応溶液には、少なくとも一の蛍光-標識分子を含む水溶液が含まれる、請求項11のデバイス。
- 少なくとも一の被分析物には、オリゴヌクレオチドが含まれ、およびそこで少なくとも一の蛍光標識分子には、蛍光標識ヌクレオチドが含まれる、請求項12のデバイス。
- デバイスベースのデバイスサーキトリーは相補型金属酸化膜半導体(CMOS)回路を形成する、請求項1のデバイス。
- 次の:
請求項1のデバイス;および
デバイスに取り付けられるフローセルで、反応溶液、および反応溶液を反応構造の反応サイトに向けるためにそれと流体連通にある少なくとも一のフローチャネル
を含む、バイオセンサ。 - 方法であって、次の:
光センサによって検出される光子に基づいてデータ信号を送信するために、複数の光センサおよび光センサに電気的に連結されるデバイスサーキトリーが含まれるデバイスベース内に複数のトレンチを形成することであり、複数のトレンチはデバイスベースの上部表面から、および少なくとも一の対応する光センサに向けて伸びるものであり;
複数のトレンチの内側表面上に支持層を堆積すること;
少なくとも第一の波長の光をフィルタリングし、および第二の波長の光が少なくとも一の対応する光センサにまでそれを通過するのを許す第一のフィルタ物質により、堆積された支持層上の複数のトレンチを充填すること;
複数のボイドを形成するために、デバイスベースおよび第一のフィルタ物質の間に配置される複数のトレンチ内で堆積された支持層の上側部分を除去すること;
少なくとも第一の波長の光をフィルタリングし、および複数の光ガイドを形成するために、第三の波長の光が少なくとも一の対応する光センサにまでそれを通過するのを許す第二のフィルタ物質により複数のボイドを充填すること;および
デバイスベースおよび反応溶液と、反応溶液による処理後少なくとも第一の波長の入射励起光に応答して少なくとも一の第二および第三の波長の光を生じる少なくとも一の反応サイトとを含むための複数の光ガイド上の反応構造を形成すること
を含む、方法。 - 複数のトレンチ内の堆積された支持層の上側部分を除去することは、第一の領域の底部分の下および周りに延びる支持層部分を形成する、請求項16の方法。
- 支持層が第二のライナ層上に延びるように支持層を堆積するのに先立ち、複数のトレンチの内側表面上およびデバイスベースの上部表面上に第二のライナ層を堆積することがさらに含まれる、請求項16の方法。
- 第一のフィルタ物質は第二の波長の光をさらにフィルタリングし、および第二のフィルタ物質は第一の波長の光をさらにフィルタリングする、請求項16の方法。
- 第一のフィルタ物質は第一のダイを伴うポリマ物質であり、および第二のフィルタ物質は第一のダイとは異なる第二のダイを伴うポリマ物質である、請求項16の方法。
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