JP2021185601A - 露出可能なセンシング層を有するウエハ処理機器 - Google Patents
露出可能なセンシング層を有するウエハ処理機器 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00412—Mask characterised by its behaviour during the etching process, e.g. soluble masks
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- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
[0001] 本願は、本書で参照することによって全内容が以下に組み込まれる、2016年8月25日出願の米国特許出願第15/247,717号の優先権を主張するものである。
[0002] 実施形態は半導体処理の分野に関し、具体的には、ウエハ処理ツールにおける材料の堆積あるいは材料の除去を測定するためのデバイス及び方法に関する。
[0003] 半導体デバイス製造の一番の関心事は、半導体ウエハの粒子汚染である。このような汚染は典型的に、半導体デバイスの製造中にウエハ処理ツールによって行われる一又は複数の工程中に発生する。例えば、ウエハ処理ツールは、ロードロックによって相互接続された幾つかのチャンバなど、幾つかのインターフェースを含みうる。また、これらのシステム構成要素のいずれかの作動又は操作は、アルミニウム、ステンレス鋼、ジルコニウムなどの金属粒子又は非金属粒子、或いはツール内の半導体ウエハを汚染しうる他の粒子を生成しうる。当業者であれば、粒子はインターフェース及び可動部分以外のウエハ処理ツール内の多くのソースから発生することがあり、したがって、上記は例として提示したものであることが理解されるであろう。
第2のマイクロセンサは、ウエハ処理ツール102の第2の所定の位置、例えば、チャンバ空間406内の第2の位置に配置されてよい。マイクロセンサ210は、ランダムに、あるいは所定のパターンで処理チャンバ114上に分散していてよい。例えば、第2の位置は、第1の位置に対して、又は処理チャンバ114上の他の何らかの基準点に対して既知の配置を有しうる。したがって、材料の堆積/除去の均一性は、第1のマイクロセンサ及び第2のマイクロセンサからのリアルタイムの測定値を比較することによって、以下に説明するように決定することができる。
Claims (15)
- ウエハ処理ツールであって、
チャンバ空間を有する処理チャンバと、
前記チャンバ空間内に装着された第1のマイクロセンサであって、第1のセンシング層の上に第1のマスク層を含む第1のマイクロセンサと、
前記チャンバ空間内に装着された第2のマイクロセンサであって、第2のセンシング層の上に第2のマスク層を含む第2のマイクロセンサとを備え、
前記第1のマイクロセンサと前記第2のマイクロセンサはそれぞれのパラメータを有し、それぞれのセンシング層の上にそれぞれのセンサ表面を含み、材料が前記それぞれのセンサ表面から取り除かれると、前記それぞれのパラメータは変化する、ウエハ処理ツール。 - 前記チャンバ空間内に装着され、前記チャンバ空間に開かれている露出したセンシング層をさらに備える、請求項1に記載のウエハ処理ツール。
- 前記第1のマスク層は第1の厚さを有し、前記第2のマスク層は、前記第1の厚さとは異なる第2の厚さを有する、請求項2に記載のウエハ処理ツール。
- 前記第1のマスク層と前記第2のマスク層は、様々な厚さを含む層プロファイルを有するブランケットマスク層の一部である、請求項3に記載のウエハ処理ツール。
- 前記第1のマスク層は第1のマスク材料を有し、前記第2のマスク層は第2のマスク材料を有し、前記第1のマスク材料は前記チャンバ空間内のエッチャントによるエッチングに対して感受性があり、前記第2のマスク材料は前記エッチャントによるエッチングに対して感受性がない、請求項2に記載のウエハ処理ツール。
- 前記第1のマイクロセンサは前記露出したセンシング層を含み、前記第1のマスク層は前記露出したセンシング層と前記第1のセンシング層との間にある、請求項5に記載のウエハ処理ツール。
- 前記露出したセンシング層と前記第1のセンシング層との間に中間マスク層をさらに備える、請求項6に記載のウエハ処理ツール。
- 前記マイクロセンサはマイクロセンサを含み、前記それぞれのパラメータは前記マイクロセンサのキャパシタンスであり、前記キャパシタンスは、材料が前記それぞれのセンサ表面から取り除かれると変化する、請求項1に記載のウエハ処理ツール。
- チャンバ空間を有する処理チャンバ内でウエハ製造プロセスを開始することであって、第1のマイクロセンサと第2のマイクロセンサは前記処理チャンバ内に配置され、前記第1のマイクロセンサの第1のセンシング層と前記第2のマイクロセンサの第2のマスク層は前記チャンバ空間に露出される、ウエハ製造プロセスを開始することと、
前記第1のマイクロセンサの前記第1のセンシング層上の第1のセンサ表面をエッチャントによってエッチングすることと、
前記第2のマイクロセンサの第2のセンシング層上の第2のセンサ表面を前記チャンバ空間に露出するため、前記第2のマイクロセンサの前記第2のマスク層をストリッピングすることと
を含む方法。 - 前記マイクロセンサはそれぞれのキャパシタンスを有するマイクロセンサを含み、前記それぞれのキャパシタンスは、材料が前記それぞれのセンサ表面から取り除かれると変化する、請求項9に記載の方法。
- 前記それぞれのキャパシタンスを測定することと、
前記それぞれのキャパシタンスに基づいて、前記第2のセンシング層上の前記第2のセンサ表面が前記チャンバ空間に露出されているかどうかを判定することとをさらに含む、請求項10に記載の方法。 - 前記エッチャントは前記第1のセンサ表面から材料を取り除き、前記第2のマスク層から材料を取り除かない、請求項10に記載の方法。
- 前記第1のマイクロセンサと前記第2のマイクロセンサは、前記チャンバ空間内のチャンバ壁に装着されている、請求項9に記載の方法。
- 前記第1のマイクロセンサと前記第2のマイクロセンサは、前記チャンバ空間内に配置された粒子モニタリング装置の支持体面に装着された、請求項9に記載の方法。
- 第3のマイクロセンサは前記処理チャンバ内に配置され、前記第3のマイクロセンサの第3のマスク層は前記チャンバ空間に露出されており、前記第3のマスク層は前記第2のマスク層よりも厚い、請求項9に記載の方法。
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US15/247,717 | 2016-08-25 | ||
US15/247,717 US9725302B1 (en) | 2016-08-25 | 2016-08-25 | Wafer processing equipment having exposable sensing layers |
JP2019510823A JP6923639B2 (ja) | 2016-08-25 | 2017-06-28 | 露出可能なセンシング層を有するウエハ処理機器 |
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