JP2021170610A - Method of manufacturing light emitting device and method of manufacturing light emitting module - Google Patents

Abstract

To provide a light emitting device with reduced variation in chromaticity.SOLUTION: A method of manufacturing a light emitting device is provided, including the steps of: preparing a light emitting element 10 that includes a semiconductor laminate 11 having a first face, a second face opposite to the first face, and lateral faces between the first face and the second face, and an electrode 12 arranged on the second face; preparing a cured first wavelength conversion member 21; arranging a semi-cured second wavelength conversion material on the first wavelength conversion member; placing the light emitting element on the second wavelength conversion material in such a manner that an upper face of the second wavelength conversion material and the first face of the light emitting element are opposed to each other; applying a load to the light emitting element in such a manner that at least a part of the semiconductor laminate is buried in the second wavelength conversion material while the electrode is exposed; and curing the second wavelength conversion material thereby forming a second wavelength conversion member 22.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a method for manufacturing a light emitting device and a method for manufacturing a light emitting module.

Light emitting devices and light emitting modules using semiconductor light emitting elements are known.

JP-A-2017-228657 Japanese Unexamined Patent Publication No. 2018-133304

It is an object of the present invention to provide a light emitting device having reduced chromaticity variation and a method for manufacturing a light emitting module having reduced chromaticity distribution variation.

The method for manufacturing a light emitting device according to the present disclosure includes the following configurations.
A semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode arranged on the second surface. And the process of preparing a light emitting element including
The process of preparing the first wavelength conversion member in a cured state and
A step of arranging the second wavelength conversion material in a semi-cured state on the first wavelength conversion member, and
A step of placing the light emitting element on the second wavelength conversion material so that the upper surface of the second wavelength conversion material and the first surface of the light emitting element face each other.
A step of applying a load to the light emitting element so that at least a part of the semiconductor laminate is embedded in the second wavelength conversion material and the electrodes are exposed.
A step of curing the second wavelength conversion material to obtain a second wavelength conversion member, and
A method for manufacturing a light emitting device including.

Thereby, it is possible to provide a light emitting device having reduced chromaticity variation and a light emitting module having reduced chromaticity distribution variation.

It is a schematic cross-sectional view which shows an example of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on embodiment. It is a schematic plan view, a schematic bottom view and a sectional view of the light emitting module which concerns on embodiment. FIG. 7A is a schematic cross-sectional view and a partially enlarged cross-sectional view taken along the line VIIB shown in FIG. 7A. It is a schematic plan view of the light emitting module which concerns on embodiment. It is a schematic cross-sectional view and a partially enlarged view in line VIIIB shown in FIG. 8A.

Hereinafter, the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, "upper", "lower", and other terms including those terms) are used as necessary, but the use of these terms is used. This is for facilitating the understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention. Further, the parts having the same reference numerals appearing in a plurality of drawings indicate the same or equivalent parts or members. Further, each member shall use the same name even if the state, shape, etc. are different before and after curing, before and after cutting, and the like.

Further, the embodiments shown below exemplify a light emitting module for embodying the technical idea of the present invention, and do not limit the present invention to the following. In addition, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are not intended to limit the scope of the present invention to the specific description, but are exemplified. It was intended. Further, the contents described in one embodiment can be applied to other embodiments. In addition, the size and positional relationship of the members shown in the drawings may be exaggerated in order to clarify the explanation.

<Embodiment 1>
FIG. 1 is a schematic cross-sectional view showing an example of a light emitting device obtained by the method for manufacturing a light emitting device according to the present embodiment. The light emitting device 100 includes a light emitting element 10 and a wavelength conversion member 20. As shown in FIG. 2A, the light emitting element 10 includes a first surface 111, a second surface 112 on the opposite side of the first surface 111, and a side surface 113 between the first surface 111 and the second surface 112. .. The second surface 112 includes a pair of positive and negative electrodes 12. The wavelength conversion member 20 includes a first wavelength conversion member 21 that covers the first surface 111 of the semiconductor laminate 11, and a second wavelength conversion member 22 that covers the side surface 113 of the semiconductor laminate 11.

Such a method for manufacturing the light emitting device 100 includes the following steps.
(1) A semiconductor laminate having a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and arranged on the second surface. Step of preparing a light emitting element including an electrode (2) Step of preparing a first wavelength conversion member in a cured state (3) A second wavelength conversion material in a semi-cured state is arranged on the first wavelength conversion member. (4) The step of placing the light emitting element on the second wavelength conversion material so that the upper surface of the second wavelength conversion material and the first surface of the light emitting element face each other (5). A step of applying a load to the light emitting element so that at least a part of the semiconductor laminate is embedded in the second wavelength conversion material and the electrodes are exposed. (6) The second wavelength conversion material is cured. The process of using the second wavelength conversion member

Hereinafter, each process will be described in detail.

(1) Step of preparing light emitting elements A plurality of light emitting elements 10 are prepared. A required number or more of the light emitting elements 10 are prepared according to the size of the light emitting module 100 and the target optical characteristics. As shown in FIG. 2A, the light emitting element 10 includes a semiconductor laminate 11 and a pair of positive and negative electrodes 12. The semiconductor laminate 11 includes a first surface 111, a second surface 112 on the opposite side of the first surface 111, and a side surface 113 between the first surface 111 and the second surface 112. The electrode 12 is arranged on the second surface 112.

Such a light emitting element 10 can be purchased and prepared. Alternatively, a part of the manufacturing process of the light emitting element 10, such as a step of laminating a semiconductor layer on a wafer-like growth substrate to form a semiconductor laminate, a step of forming an electrode on the semiconductor laminate, a step of individualizing, or the like. You can do everything and get ready.

(2) Step of Preparing First Wavelength Conversion Member As shown in FIG. 2B, a sheet-shaped first wavelength conversion member 21 is prepared. The cured first wavelength conversion member 21 includes a translucent resin and particles of a phosphor which is a wavelength conversion substance. A first wavelength conversion material in which a phosphor is dispersed in a liquid resin can be prepared by arranging it on a support base by a printing method such as coating or a spray method, and heating and curing it. can. Alternatively, the cured first wavelength conversion member 21 may be purchased and prepared.

The first wavelength conversion member 21 in the cured state is adjusted so that the thickness is uniform. For example, the film thickness of the first wavelength conversion member 21 is, for example, 30 μm to 100 μm, and a thickness difference of about 5 μm or less is defined as a uniform thickness.

(3) Step of Arranging the Second Wavelength Conversion Material on the First Wavelength Conversion Member The second wavelength conversion material 22a becomes the second wavelength conversion member 22 by being cured. The second wavelength conversion material 22 contains a translucent resin and particles of a phosphor which is a wavelength conversion substance. A mixed liquid containing the resin and the phosphor is arranged on the first wavelength conversion member 21. The mixed solution may contain a solvent or the like. Examples of the method of arranging include a printing method such as coating, a method selected from a spraying method, and the like.

When the mixed liquid contains a solvent, it can be made into a semi-cured state by evaporating (volatilizing) the solvent. The temperature at which the solvent is evaporated is at room temperature or higher, preferably about 50 ° C. to 100 ° C., and more preferably about 60 ° C. to 80 ° C. By heating to such a temperature, a semi-cured state can be obtained. As a result, as shown in FIG. 2C, a laminated body in which the second wavelength conversion material 22a in the semi-cured state is arranged on the first wavelength conversion member 21 is obtained. The thickness of the second wavelength conversion material 22a is adjusted so as to be the same as or thinner than the thickness of the semiconductor laminate 11 of the light emitting element 10.

(4) Step of placing the light emitting element on the second wavelength conversion material Next, as shown in FIG. 2D, the light emitting element 10 is placed on the second wavelength conversion material 22a. The light emitting element 10 is arranged so that the first surface 111 of the semiconductor laminate 11 of the light emitting element 10 and the upper surface of the second wavelength conversion material 22a face each other. When arranging the light emitting elements 10, the light emitting elements 10 may be placed one by one, or a plurality of light emitting elements 10 may be placed together in a state of being attached to a wafer sheet, a substrate, or the like. can.

(5) Step of applying a load to the light emitting element Next, as shown in FIG. 2E, the light emitting element 10 is pressed from above by using the pressing member 300 to apply a load. As a result, as shown in FIG. 2F, the semiconductor laminate 11 of the light emitting element 10 is embedded in the second wavelength conversion material 22a. At this time, a load is applied to the light emitting element 10 until the first surface 111 of the semiconductor laminate 11 comes into contact with the upper surface of the first wavelength conversion member 21 or reaches a predetermined pushing load. Examples of the method of applying the load include a spring load, an electric load, and the like. The load applied to the light emitting element 1 can be, for example, 5 gf to 60 gf. The load can be adjusted by the elastic force of the second wavelength conversion material 22a. Since the first wavelength conversion member 21 is cured even when the light emitting element 10 is loaded in this way, the thickness of the first wavelength conversion member 21 located below the first surface 111 of the semiconductor laminate 11 changes. do not.

(6) Step of Curing the Second Wavelength Conversion Material to Form a Second Wavelength Conversion Member Next, the second wavelength conversion material 22a is cured by heating to form a second wavelength conversion member 22. After that, as shown in FIG. 2G, the first wavelength conversion member 21 and the second wavelength conversion member 22 are cut so as to include at least one light emitting element 10. The light emitting device 100 shown in FIG. 1 can be obtained by cutting so as to include one light emitting element 10.

<Embodiment 2>
The light emitting device 100A shown in FIG. 3 includes a light adjusting member 30 on the wavelength conversion member 20. Other configurations are the same as those of the light emitting device 100 shown in FIG. The light adjusting member 30 reflects 50% to 90% of the light from the light emitting element 10. By adjusting the reflectance of the light adjusting member 30, the light distribution characteristic of the light emitting device 100A can be adjusted.

In such a manufacturing method of the light emitting device 100A, in the step of preparing the first wavelength conversion member 21 in the cured state, a laminated structure in which the first wavelength conversion member 21 is laminated on the light adjusting member 30 in the cured state is prepared. It may include a step of performing. Such a laminated structure may include a step of arranging the first wavelength conversion member 21 in the cured state on the light adjusting member 30 in the cured state. Further, a step of arranging a liquid first wavelength conversion material on the cured light adjusting member 30 and heating the first wavelength conversion member 21 in a cured state may be included. Alternatively, a step of arranging the cured light adjusting member 30 on the cured first wavelength conversion member 21 may be included. Alternatively, the light adjusting member 30 in the cured state may be obtained by arranging the liquid light adjusting material on the first wavelength conversion member 21 in the cured state and then heating the material.

Next, as shown in FIG. 4A, the first wavelength conversion member 21 is arranged on the light adjusting member 30, and the second wavelength conversion material 22a in a semi-cured state is arranged on the first wavelength conversion member 21. The light emitting element 10 is placed on the light emitting element 10, and as shown in FIG. 4B, the light emitting element 10 is pressed by the pressing member 300 to apply a load. Other steps can be performed in the same manner as in the first embodiment.

The cured light adjusting member 30 includes a translucent resin and particles of a light reflecting substance. It can be prepared by arranging a mixture in which a light reflecting substance is dispersed in a liquid resin on a support base by a printing method such as coating or a spraying method, and heating and curing the mixture. Alternatively, the cured light adjusting member 30 may be purchased and prepared.

<Embodiment 3>
The light emitting device 100B shown in FIG. 5 includes a light adjusting member 31 (second light adjusting member 31) under the wavelength conversion member 20. The light adjusting member 31 covers the second surface 112 of the semiconductor laminate 11 of the light emitting element 10 and the side surface of the electrode 12. Other configurations are the same as those of the light emitting device 100A shown in FIG.

The light adjusting member 31 reflects 70% to 99% of the light from the light emitting element 10. By providing the light adjusting member 31, it is possible to reduce the leakage of light from the light emitting element 10 below the light emitting device 100B.

As shown in FIG. 4B, such an optical adjusting member 31 is arranged with a thickness such that the electrode 12 is embedded after the semiconductor laminate 11 is embedded in the second wavelength conversion material 22a, as shown in FIG. 6A. do. The light adjusting member 31 arranges the material of the liquid light adjusting member on the second wavelength conversion material 22a in the semi-cured state, and then heats the light adjusting member 31 in the cured state and the second wavelength conversion member in the cured state, respectively. It can be 22. Alternatively, the second wavelength conversion member 22a may be heated to form a cured light-reflecting member 22, and then a light-reflecting material may be arranged on the light-reflecting member 22a and cured to form the light adjusting member 31.

The material of the liquid light adjusting member can be arranged by a printing method such as coating, a method selected from a spraying method, or the like. Further, the light tonality member 31 can be arranged by using a semi-cured or cured sheet-shaped or plate-shaped light adjusting member and laminating it with the second wavelength conversion member 22a by a laminating method or the like. Then, as shown in FIG. 6B, a part of the light adjusting member 31 is removed until the electrode 12 is exposed. Examples of the method for removing a part of the phototonal member 31 include grinding with a grindstone and blasting. Other steps are the same as in other embodiments.

(Light emitting module)
The light emitting device obtained by the manufacturing method according to each embodiment can be used as a light source of the light emitting module. 7A and 7B are examples of a light emitting module using the light emitting device 100B. Here, four light emitting devices 100B are arranged in 2 rows and 2 columns. Two vertically arranged light emitting devices 100B are connected in series, and they are further connected in parallel. Then, power is supplied from the external connection terminals 251 and 252, and the four light emitting devices 100B are turned on at the same time. The connection of the light emitting device 100B is not limited to this, and any number of light emitting devices can be connected in series or in parallel. In addition, they can be connected so that they can be individually driven one by one.

The light emitting module 200 includes a light guide plate 210, a plurality of light emitting devices 100B joined to the light guide plate 210, and a covering member 220. The light guide plate 10 includes a first main surface 211 that serves as a light extraction surface, and a second main surface 212 that is opposite to the first main surface 211. The light guide plate 210 includes a plurality of first recesses 212a arranged in a matrix on the second main surface 212. The light emitting device 100B is joined by a translucent member 230 on the bottom surface of the first recess 212a1 of the light guide plate 210. The covering member 220 is arranged so as to cover the light emitting device 100B and the second main surface 212 of the light guide plate 210.

A part of the light emitted from the light emitting element 10 is wavelength-converted by the first wavelength conversion member 21 or the second wavelength conversion member 22. Then, the mixed light of the converted light and the light from the light emitting element 10 is emitted as the light from the light emitting device 100B. The light emitted from the light emitting device 100B passes through the translucent member 230 and is incident inside the light guide plate 210.

The first wavelength conversion member 21 of the light emitting device 100B is in a cured state adjusted so that the thickness is uniform. Therefore, the amount of light converted by the first wavelength conversion member 21 has little variation in chromaticity for each light emitting device 100B. Therefore, in the light emitting module 200, it is possible to reduce the variation in the in-plane chromaticity distribution.

Such a light emitting module 200 includes an optical function unit 211a on the first main surface 211 side of the light guide plate 210. The optical function unit 211a is, for example, a recess arranged directly above the recess 212a of the light guide plate 210 as shown in FIG. 7B. The side surface of the optical function unit 211a allows the light from the light emitting device 100B to be spread in the plane. Further, in the example shown in FIG. 7B, the optical adjusting member 240 is arranged in the optical functional unit 211a. The light adjusting member 240 is a member that reflects at least a part of the light from the light emitting device 100B, and has a function of reflecting the light from the light emitting device 100B so as to efficiently spread it in the plane. By reducing the variation in the chromaticity of the light from the light emitting device 100B, the optical function unit 211a and the light adjusting member 240 provide light with little variation in chromaticity, and planar light with reduced variation in brightness. Can be emitted as.

The second main surface 212 of the light guide plate 210 can include a second recess 212b arranged so as to surround the first recess 212a in a plan view. The side surface of the second recess 212b can function as a reflector that reflects the light emitted from the light emitting device toward the first main surface 211. The side surface of the second recess 212b may be a straight line or a curved surface in a cross-sectional view, and further, these may be combined. Further, when the side surface of the groove is a curved surface, the curvature may be constant, and it may have an arbitrary curvature depending on the position.

The following steps can be mentioned as an example of such a method for manufacturing the light emitting module 200.
(1) Step of preparing a light emitting device (2) Step of preparing a light guide plate having a first main surface to be a light extraction surface and a second main surface opposite to the first main surface and having a plurality of recesses. (3) Step of arranging the translucent member and the light emitting device in the recess (4) Step of arranging the covering member covering the light emitting device and the second main surface (5) Step of arranging the wiring layer

8A and 8B are another example of the light emitting module. Here, too, an example in which the light emitting device 100B is used as the light source is shown.

The light emitting module 200A includes a light guide plate 210, a plurality of light emitting devices 100B joined to the light guide plate 210, and a covering member 220. The light guide plate 210 includes a first main surface 211 that serves as a light extraction surface, and a second main surface 212 that is opposite to the first main surface 211. Further, a plurality of through holes 213 penetrating from the first main surface 211 to the second main surface 212 are provided. A light-reflecting covering member 220 is arranged in the through hole 213 of the light guide plate 210. The covering member 220 has a hole, and the conductive member 270 is arranged inside the hole. The conductive member 270 is electrically connected to the wiring layer 250. The wiring layer 250 is covered with a substrate 260. The light emitting device 100B is electrically connected to the conductive member 270 in the through hole 213. A translucent member 230 is arranged in the through hole 213 so as to cover the light emitting device 100B.

Similar to the light emitting module 200, by using the light emitting device 100B having a small variation in chromaticity, it is possible to reduce the variation in the in-plane chromaticity distribution also in the light emitting module 200A.

In the light emitting module 200A, a light adjusting member 240 (third light adjusting member 240) is arranged on the translucent member 230. As a result, it is possible to prevent the light from the light emitting device 100B from being strongly emitted directly above the light emitting device 100B. As a result, the light emitted from the light emitting device 100B with little variation in chromaticity can be emitted as planar light with reduced variation in luminance distribution.

The plurality of light emitting devices 100B can be locally dimmable light emitting modules. For example, one light emitting region may include one light emitting device 100B, each of which can be independently driven. Alternatively, one light emitting region can include a plurality of light emitting devices 100B as one group. In that case, a plurality of light emitting devices 100B in one group can be electrically connected to the same circuit by electrically connecting them in series or in parallel, and simultaneous light emission is possible.

In this way, in the case of a locally dimmable light emitting module, it is preferable to prevent light from propagating to adjacent light emitting regions. The light emitting module 200A includes a picture groove 211b surrounding the through hole 213 on the first main surface 211 side of the light guide plate 210. In the example shown in FIG. 8A, a quadrangular partition groove 211b is provided in a plan view. With such a partition groove 211b, it is possible to suppress the propagation of light to the adjacent light emitting region. Further, the partition member 280 can be arranged in the partition groove 211b. As the partition member 280, for example, a light-reflecting member can be used. This makes it possible to efficiently suppress the propagation of light.

The following steps can be mentioned as an example of such a method for manufacturing the light emitting module 200A.
(1) Step of preparing a light emitting device (2) Penetration through the first main surface to be the light extraction surface, the second main surface opposite to the first main surface, and the first main surface to the second main surface. Step of preparing a light guide plate having a plurality of holes (3) Step of arranging a light emitting device on a wiring board (4) A process of arranging a light guide plate on a wiring board so that a light emitting device is arranged in a through hole (4) 5) Step of arranging the translucent member in the through hole (6) Step of arranging the light adjusting member on the translucent member

Each member constituting the light emitting device and the light emitting module will be described in detail below.

[Light emitting device]
The light emitting device includes a light emitting element and a wavelength conversion member. Further, the light emitting device may further include a light adjusting member or a light reflecting member.

(Light emitting element)
As the light emitting element, a known semiconductor light emitting element can be used. In this embodiment, a light emitting diode is exemplified as a light emitting element.

The light emitting device includes, for example, a semiconductor laminate including a translucent element substrate such as sapphire and a semiconductor layer laminated on the element substrate. As the light emitting element, an element that emits light having an arbitrary wavelength can be selected. For example, blue, as the device that emits green light, using the light emitting device using nitride semiconductor _{(In x Al y Ga 1-} x-y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) be able to. Various emission wavelengths can be selected depending on the material of the semiconductor laminate and its mixed crystallinity. The composition, emission color, size, number, etc. of the light emitting element to be used may be appropriately selected according to the purpose. _{The light emitting device is a nitride semiconductor (In x} Al _y Ga _1-xy N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) capable of emitting short-wavelength light capable of efficiently exciting a wavelength conversion member. ) Is preferably provided.

The shape of the light emitting element in a plan view can be a quadrangle such as a square or a rectangle, or a polygon such as a triangle or a hexagon. The size of the light emitting element is, for example, preferably 1000 μm or less in the vertical and horizontal dimensions in a plan view, more preferably 500 μm or less in the vertical and horizontal dimensions, and further preferably the vertical and horizontal dimensions. It is 200 μm or less.

(Wavelength conversion member / first wavelength conversion member / second wavelength conversion member)
The wavelength conversion member includes a wavelength conversion substance such as a phosphor that converts the wavelength of light emitted from a light emitting element into light having a different wavelength. The wavelength conversion member includes a translucent material as a base material and a particulate phosphor as a wavelength conversion substance. The wavelength conversion member includes a first wavelength conversion member that covers the first surface of the semiconductor laminate of the light emitting element, and a second wavelength conversion member that covers the side surface of the semiconductor laminate. The base material and the phosphor contained in the first wavelength conversion member and the second wavelength conversion member may be the same or different from each other.

The translucent material has at least a translucent property that allows light from the light emitting element to be transmitted, and transmits 60% or more of the light emitted from the light emitting element, preferably 90% or more. As the material of the wavelength conversion member, a translucent thermosetting resin material such as an epoxy resin or a silicone resin can be used.

Examples of the phosphor include an yttrium aluminum garnet type phosphor (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce) and a lutetium aluminum garnet type phosphor (for example, Lu ₃ (Al, Ga) ₅ O). ₁₂ : Ce), terbium aluminum garnet-based phosphor (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce) -based phosphor, silicate-based phosphor (for example, (Ba, Sr) ₂ SiO ₄ : Eu), Examples thereof include chlorosilicate-based phosphors (for example, Ca ₈ Mg (SiO ₄ ) ₄ Cl ₂ : Eu). Further, as the nitride-based phosphor, a β-sialone-based phosphor (for example, Si _6-z Al _{z Oz} N _8-z : Eu (0 <z <4.2)) and an α-sialon-based phosphor (for example, Mz (for example)) Si, Al) ₁₂ (O, N) ₁₆ (where 0 <z ≦ 2, M is a lanthanide element excluding Li, Mg, Ca, Y, and La and Ce), nitrogen-containing calcium aluminosilicate (CASN or SCASN) phosphor (e.g. _{(Sr, Ca) AlSiN 3:} . Eu) and the like general formula _{(I) Ma x Mb y Al} 3 N z: phosphor represented by Eu (provided that the general formula ( In I)), Ma is at least one element selected from the group consisting of Ca, Sr and Ba, and Mb is at least one element selected from the group consisting of Li, Na and K. , X, y and z satisfy 0.5 ≦ x ≦ 1.5, 0.5 ≦ y ≦ 1.2 and 3.5 ≦ z ≦ 4.5, respectively). Further, SGS-based phosphors (for example, SrGa ₂ S ₄ : Eu) can be mentioned. In addition, a manganese-activated fluoride-based phosphor represented by a manganese-activated fluoride-based phosphor (general formula (II) A ₂ [M _1-a Mn _a F ₆ ] (however, in the above general formula (II), A is K, At least one element selected from the group consisting of Li, Na, Rb, Cs and NH ₄ , M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and a is 0 <a <0.2 is satisfied)). Typical examples of the manganese-activated fluoride phosphors, phosphor manganese-activated fluoride potassium silicate (e.g. _{KSF (K 2 SiF 6: Mn} )) is.

One wavelength conversion member may contain one or more types of phosphors. The plurality of types of phosphors may be used in a mixed manner, or may be used in a laminated manner. For example, a light emitting element that emits blue-based light can be used, and as a phosphor, a β-sialone phosphor that emits green-based light and a fluoride-based phosphor such as a KSF phosphor that emits red-based light can be included. .. By using these two types of phosphors, the color reproduction range of the light emitting module can be expanded. Further, the phosphor may be a quantum dot.

The phosphor may be arranged in any way inside the wavelength conversion member. For example, the phosphors may be distributed substantially uniformly inside the wavelength conversion member, or may be unevenly distributed in a part thereof.

The wavelength conversion member may contain a light diffusing substance. Examples of the light diffusing substance include fine particles such as _{SiO 2} , TiO ₂ , Al ₂ O _{3, and ZnO.}

The thickness of the first wavelength conversion member can be 5 μm to 200 μm. Further, the thickness of the second wavelength conversion member can be the same as that of the semiconductor laminate. Further, the thickness of the second wavelength conversion member can be made thicker than the thickness of the semiconductor laminate.

The thickness of the second wavelength conversion member can be the same as that of the semiconductor laminate. In this case, the second surface and the electrodes of the semiconductor laminate are exposed from the second wavelength conversion member. When the light emitting device includes the second phototuning member, the second phototuning member can cover the second surface of the semiconductor laminate and the side surface of the electrode.

Further, the thickness of the second wavelength conversion member can be made thicker than the thickness of the semiconductor laminate. In this case, the side surface and the second surface of the semiconductor laminate are covered with the second wavelength conversion member.

Alternatively, the thickness of the second wavelength conversion member can be made thinner than the thickness of the semiconductor laminate. In that case, a part of the side surface and the second surface of the semiconductor laminate are exposed from the second wavelength conversion member. When the light emitting device includes the second phototuning member, the side surface and the second surface of the semiconductor laminate can be covered with the second phototuning member. That is, since the thickness of the second phototuning member can be increased, it is possible to reduce the leakage of light from the lower surface side of the light emitting device.

(Light adjustment member / 1st light adjustment member / 2nd light adjustment member)
The light adjusting member (first light adjusting member or second light adjusting member) is arranged on the wavelength conversion member. The light adjusting member preferably has a function of reflecting a part of the light from the light emitting element. For example, it has a reflectance of 50% to 90%, preferably 60% to 80% with respect to the light emitted from the light emitting element. As the material of the light adjusting member, for example, a white resin material can be used. As the material of the light adjusting member, a white resin material is particularly preferable. Examples of the white resin material _{include resin materials containing SiO 2} , TiO ₂ , Al ₂ O ₃ , ZnO, and the like as light-reflecting substances. As the resin material, a translucent thermosetting resin material such as an epoxy resin or a silicone resin can be used.

(Pressing member)
Examples of the pressing member include a hard member such as a metal plate, ceramic, or cemented carbide. A plate-shaped pressing member can be used, and a load can be applied to a plurality of light emitting elements at the same time. Alternatively, a load can be applied to each light emitting element by using a collet or the like. Further, the load when applying the load can be, for example, 5 gf to 60 gf.

[Light emitting module]
The light emitting module includes a translucent light guide plate, a light reflective coating member, a translucent member arranged between the light emitting device and the light guide plate, and a wiring layer for supplying power to the light emitting device. Be prepared. Further, a light adjusting member, a substrate, a conductive member, a partition member and the like can be provided.

The light guide plate is a translucent member that spreads the light emitted from the light emitting device in a plane shape. As the material of the light guide plate, a thermoplastic resin such as acrylic, polycarbonate, cyclic polyolefin, polyethylene terephthalate and polyester, a resin material such as a thermosetting resin such as epoxy and silicone, and an optically transparent material such as glass should be used. Can be done. In particular, a thermoplastic resin material is preferable because it can be efficiently produced by injection molding.

The covering member is a light-reflecting member that covers the plurality of light emitting devices and the second main surface of the light guide plate. The covering member has a reflectance of 60% or more, preferably 90% or more, with respect to the light emitted from the light source. As the material of the covering member, for example, a metal, a white resin material, or the like can be used. Further, a DBR film can be used as the covering member. As the material of the covering member, a white resin material is particularly preferable. Examples of the white resin material _{include a resin material containing SiO 2} , TiO ₂ , Al ₂ O ₃ , ZnO and the like as a light-reflecting substance, a foamed resin material and the like. As the resin material, a translucent thermosetting resin material such as an epoxy resin, a silicone resin, or polyethylene terephthalate can be used. The partition member can be used with the same material as the covering member.

The translucent member is arranged between the light emitting device and the light guide plate in the arrangement in the first recess or the through hole of the light guide plate. The translucent member is translucent to transmit the light emitted from the light emitting device. The translucent member transmits 60% or more, preferably 90% or more of the light emitted from the light emitting device. The translucent member is preferably a material having a refractive index comparable to that of the light guide plate material. For example, as the material of the base material, an epoxy resin, a silicone resin, a resin in which these are mixed, or a translucent material such as glass can be used.

The wiring layer is a conductive member for supplying power to the light emitting device. As the wiring layer, for example, Ag, Ag / Cu, Ni / Au and the like can be used. Alternatively, a conductive paste or the like containing Cu or the like can be used. The wiring layer may use these materials alone, or may have an alloy containing a plurality of materials or a laminated structure. The thickness of the wiring layer can be, for example, 5 μm to 50 μm.

The light adjusting member (third light adjusting member) is arranged in the optical function portion of the light guide plate or in the through hole. The light adjusting member preferably has a function of reflecting a part of the light from the light source. For example, it has a reflectance of 50% to 90%, preferably 60% to 80% with respect to the light emitted from the light source. As the material of the light adjusting member, for example, a white resin material can be used. As the material of the light adjusting member, a white resin material is particularly preferable. Examples of the white resin material _{include a resin material containing SiO 2} , TiO ₂ , Al ₂ O ₃ , ZnO and the like as a light-reflecting substance, a foamed resin material and the like. As the resin material, a translucent thermosetting resin material such as an epoxy resin, a silicone resin, or polyethylene terephthalate can be used.

The wiring board includes an insulating base material and wiring. The wiring is electrically connected to a plurality of light emitting devices. As the wiring board, a metal plate having an insulating layer on its surface may be used. Further, the wiring board may be a TFT board having a plurality of TFTs (Thin-Film Transistors). As the material of the base material of the wiring board, for example, ceramics or resin can be used. Resin may be selected as the material of the base material from the viewpoint of low cost and ease of molding. Examples of the resin include composite materials such as phenol resin, epoxy resin, polyimide resin, BT resin, polyphthalamide (PPA), polyethylene terephthalate (PET), unsaturated polyester, and glass epoxy. Further, it may be a rigid substrate or a flexible substrate.

The wiring is, for example, a conductive foil (conductor layer) provided on the base material, and is electrically connected to a plurality of light sources. The wiring material preferably has high thermal conductivity. Examples of such a material include a conductive material such as copper. Further, the wiring can be formed by plating, coating of a conductive paste, printing, or the like, and the thickness of the wiring is, for example, about 5 to 50 μm.

The light emitting module according to the present disclosure can be used, for example, as a backlight of a liquid crystal display device or a display device.

100 ... Light emitting device 10 ... Light emitting element 11 ... Semiconductor laminate 111 ... First surface 112 ... Second surface 113 ... Side surface 12 ... Electrode 20 ... Wavelength conversion member 21 ... First wavelength conversion member 22 ... Second wavelength conversion member 22a ... Second wavelength conversion material 30 ... Light adjustment member (first light adjustment member)
31 ... Light adjustment member (second light adjustment member)
200 ... Light emitting module 210 ... Light guide plate 211 ... First main surface (light extraction surface)
211a ... Optical function unit 211b ... Partition groove 212 ... Second main surface 212a ... First recess 212b ... Second recess 213 ... Through hole 220 ... Covering member 230 ... Translucent member 240 ... Light adjusting member (third light adjusting member) )
250 ... Wiring layer 251, 252 ... External connection terminal 260 ... Substrate 270 ... Conductive member 280 ... Partition member 300 ... Pressing member

Claims (5)

A semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode arranged on the second surface. And the process of preparing a light emitting element including
The process of preparing the first wavelength conversion member in a cured state and
A step of arranging the second wavelength conversion material in a semi-cured state on the first wavelength conversion member, and
A step of placing the light emitting element on the second wavelength conversion material so that the upper surface of the second wavelength conversion material and the first surface of the light emitting element face each other.
A step of applying a load to the light emitting element so that at least a part of the semiconductor laminate is embedded in the second wavelength conversion material and the electrodes are exposed.
A step of curing the second wavelength conversion material to form a second wavelength conversion member, and
A method for manufacturing a light emitting device including. The step of preparing the first wavelength conversion member in a cured state includes a step of preparing a laminated structure in which a first light adjusting member in a cured state and a first wavelength conversion member in a cured state are laminated. The method for manufacturing a light emitting device according to the above. The method for manufacturing a light emitting device according to claim 1 or 2, further comprising a step of arranging a second light adjusting member on the second wavelength conversion member after forming the second wavelength conversion member. The step of preparing the light emitting device according to any one of claims 1 to 3, and the step of preparing the light emitting device.
A step of preparing a light guide plate provided with a first main surface to be a light extraction surface, a second main surface opposite to the first main surface, and a plurality of recesses arranged on the second main surface.
A step of arranging the translucent member and the light emitting device in the recess, and
The step of arranging the light emitting device and the covering member covering the second main surface, and
The process of arranging the wiring layer connected to the light emitting device, and
A method of manufacturing a light emitting module comprising. The step of preparing the light emitting device according to any one of claims 1 to 3, and the step of preparing the light emitting device.
A step of preparing a light guide plate provided with a first main surface to be a light extraction surface, a second main surface opposite to the first main surface, and a plurality of through holes penetrating from the first main surface to the second main surface.
The process of arranging the light emitting device on the wiring board and
A step of arranging the light guide plate on the wiring board so that the light emitting device is arranged in the through hole, and
The step of arranging the translucent member in the through hole and
The step of arranging the light adjusting member on the translucent member and
A method of manufacturing a light emitting module comprising.

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