JP2021163926A - 量子カスケードレーザ素子及び量子カスケードレーザ装置 - Google Patents
量子カスケードレーザ素子及び量子カスケードレーザ装置 Download PDFInfo
- Publication number
- JP2021163926A JP2021163926A JP2020066860A JP2020066860A JP2021163926A JP 2021163926 A JP2021163926 A JP 2021163926A JP 2020066860 A JP2020066860 A JP 2020066860A JP 2020066860 A JP2020066860 A JP 2020066860A JP 2021163926 A JP2021163926 A JP 2021163926A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum cascade
- semiconductor substrate
- metal layer
- cascade laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 105
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000017525 heat dissipation Effects 0.000 abstract description 22
- 230000010355 oscillation Effects 0.000 abstract description 20
- 238000007747 plating Methods 0.000 description 17
- 238000003776 cleavage reaction Methods 0.000 description 12
- 230000007017 scission Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 230000001629 suppression Effects 0.000 description 7
- 230000006872 improvement Effects 0.000 description 6
- 210000003205 muscle Anatomy 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
[量子カスケードレーザ素子の構成]
[量子カスケードレーザ素子の製造方法]
[作用及び効果]
[変形例]
Claims (9)
- 半導体基板と、
量子カスケード構造を有する活性層を含んで構成されるリッジ部を有するように前記半導体基板上に形成された半導体積層体と、
前記リッジ部の側面上に形成された第1部分、及び、前記第1部分における前記半導体基板側の縁部から前記半導体基板の幅方向に沿って延在する第2部分を有する埋め込み層と、
前記リッジ部の頂面、前記第1部分、及び前記第2部分上に形成された金属層と、
前記第2部分と前記金属層との間に配置された誘電体層と、を備え、
前記誘電体層は、前記第2部分の一部が前記誘電体層から露出するように、形成されており、
前記金属層は、前記一部において前記第2部分に接触している、量子カスケードレーザ素子。 - 前記誘電体層には、前記第2部分のうち前記第1部分に連続する内側部分を前記誘電体層から露出させる開口が形成されており、
前記金属層は、前記開口を介して前記内側部分に接触している、請求項1に記載の量子カスケードレーザ素子。 - 前記半導体基板の幅方向における前記開口の幅は、前記活性層の幅の2倍以上である、請求項2に記載の量子カスケードレーザ素子。
- 前記半導体基板の幅方向における前記開口の幅は、前記第2部分の厚さの10倍以上である、請求項2又は3に記載の量子カスケードレーザ素子。
- 前記金属層に電気的に接続された金属製のワイヤを更に備え、
前記金属層と前記ワイヤとの接続位置は、前記半導体基板の厚さ方向から見た場合に、前記誘電体層と重なっている、請求項1〜4のいずれか一項に記載の量子カスケードレーザ素子。 - 前記半導体基板の厚さ方向において、前記第2部分における前記半導体基板とは反対側の表面は、前記活性層における前記半導体基板とは反対側の表面と前記半導体基板側の表面との間に位置しており、
前記半導体基板の幅方向から見た場合に、前記第1部分上の前記金属層の一部は、前記活性層と重なっている、請求項1〜5のいずれか一項に記載の量子カスケードレーザ素子。 - 前記第1部分の厚さは、前記第2部分の厚さよりも薄い、請求項1〜6のいずれか一項に記載の量子カスケードレーザ素子。
- 前記金属層は、前記第1部分上に直接に形成されている、請求項1〜7のいずれか一項に記載の量子カスケードレーザ素子。
- 請求項1〜8のいずれか一項に記載の量子カスケードレーザ素子と、
前記量子カスケードレーザ素子を駆動する駆動部と、を備える、量子カスケードレーザ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020066860A JP7489814B2 (ja) | 2020-04-02 | 2020-04-02 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
DE112021002036.6T DE112021002036T5 (de) | 2020-04-02 | 2021-03-25 | Quantenkaskadenlaserelement und quantenkaskadenlaservorrichtung |
US17/914,508 US20230130363A1 (en) | 2020-04-02 | 2021-03-25 | Quantum cascade laser element and quantum cascade laser device |
PCT/JP2021/012674 WO2021200584A1 (ja) | 2020-04-02 | 2021-03-25 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020066860A JP7489814B2 (ja) | 2020-04-02 | 2020-04-02 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021163926A true JP2021163926A (ja) | 2021-10-11 |
JP7489814B2 JP7489814B2 (ja) | 2024-05-24 |
Family
ID=77927917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020066860A Active JP7489814B2 (ja) | 2020-04-02 | 2020-04-02 | 量子カスケードレーザ素子及び量子カスケードレーザ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230130363A1 (ja) |
JP (1) | JP7489814B2 (ja) |
DE (1) | DE112021002036T5 (ja) |
WO (1) | WO2021200584A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4117557B2 (ja) | 2002-09-20 | 2008-07-16 | ソニー株式会社 | 半導体レーザ装置及びその製造方法 |
JP3676771B2 (ja) | 2002-10-03 | 2005-07-27 | アンリツ株式会社 | 半導体装置の製造方法 |
JP6801416B2 (ja) | 2016-12-08 | 2020-12-16 | 住友電気工業株式会社 | 量子カスケード半導体レーザ |
JP2018137327A (ja) | 2017-02-21 | 2018-08-30 | パナソニック株式会社 | 窒化物半導体レーザ |
JP6939120B2 (ja) | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
JP2020043206A (ja) | 2018-09-10 | 2020-03-19 | 明広 石田 | バンド間遷移カスケードレーザ |
-
2020
- 2020-04-02 JP JP2020066860A patent/JP7489814B2/ja active Active
-
2021
- 2021-03-25 US US17/914,508 patent/US20230130363A1/en active Pending
- 2021-03-25 WO PCT/JP2021/012674 patent/WO2021200584A1/ja active Application Filing
- 2021-03-25 DE DE112021002036.6T patent/DE112021002036T5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE112021002036T5 (de) | 2023-01-19 |
JP7489814B2 (ja) | 2024-05-24 |
US20230130363A1 (en) | 2023-04-27 |
WO2021200584A1 (ja) | 2021-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7098063B2 (en) | Semiconductor laser device and method of manufacturing the same | |
US7079563B2 (en) | Semiconductor laser device and method of manufacturing the same | |
US20230133283A1 (en) | Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser device | |
JP5214844B2 (ja) | 光半導体装置 | |
JP2014229744A (ja) | 半導体発光組立体 | |
WO2009107621A1 (ja) | 半導体レーザ素子およびその製造方法 | |
WO2021200584A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
WO2021200548A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
JP4148321B2 (ja) | 半導体レーザ装置及び製造方法 | |
WO2021200552A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
WO2021200549A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
WO2021200583A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
WO2021200582A1 (ja) | 量子カスケードレーザ素子の製造方法 | |
JP2006100369A (ja) | 半導体レーザ素子およびその製造方法 | |
WO2021200670A1 (ja) | 量子カスケードレーザ素子及び量子カスケードレーザ装置 | |
US20230246422A1 (en) | Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser element | |
US20230291180A1 (en) | Quantum cascade laser element and quantum cascade laser device | |
US20230114599A1 (en) | Semiconductor laser element, semiconductor laser device, and method for manufacturing semiconductor laser element | |
JP6435820B2 (ja) | 光半導体装置および光半導体素子の実装方法 | |
KR101136317B1 (ko) | 레이저 다이오드 및 그 제조방법 | |
JP2023043548A (ja) | 光半導体素子、光学ユニット及び光学ユニットの製造方法 | |
JP2021153125A (ja) | 量子カスケードレーザ | |
JP2021153124A (ja) | 量子カスケードレーザ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230711 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20230829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240416 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7489814 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |