JP2021150546A5 - Heater Chip and Bonding Layer Evaluation Method and Bonding Layer Evaluation Apparatus - Google Patents

Claims (8)

a first substrate;
a thin film heater formed on the first surface of the first substrate;
a temperature probe formed on the first surface of the first substrate;
a Ni—P film (nickel phosphorous) formed on the second surface of the first substrate;
A heater chip comprising a film made of In (indium) or an In alloy (indium alloy) formed on the Ni—P film (nickel phosphorus). forming an In (indium) diffusion barrier film on the film made of In (indium) or the In alloy (indium alloy);
The first substrate is made of SiC (silicon carbide),
The film thickness of the thin film heater is 0.1 (μm) or more and 7.5 (μm) or less,
The sheet resistance value (Ω/sq) of the thin film heater is 0.25 (Ω/sq) or more and 1.00 (Ω/sq) or less,
The thickness of the film made of the In (indium) or the In alloy (indium alloy) is 0.1 μm or more and 10 μm or less,
2. The heater chip according to claim 1, wherein said In (indium) diffusion prevention film is an electroless Ni--P plating film or an electrolytic Ni plating film. a recess is formed in the thin-film heater formation or placement portion on the first substrate by a laser device;
the thin film heater is formed or arranged in the recess,
2. The heater chip of claim 1, wherein said thin film heaters are spirally or concentrically formed or arranged. A first substrate, a thin film heater formed on a first surface of the first substrate, a temperature probe formed on the first surface of the first substrate, and a second substrate of the first substrate. and a film made of In (indium) or In alloy (indium alloy) formed on the second Ni—P film (nickel phosphorous). a heater chip having
having a second substrate on which a second Ni—P film (nickel phosphorous) is formed;
forming a bonding layer between the film made of In (indium) or the In alloy (indium alloy) and the second Ni—P film (nickel phosphorus);
supplying current to the thin film heater to heat the bonding layer;
measuring the resistance change of the temperature probe;
A bonding layer evaluation method, comprising measuring a temperature of the bonding layer. forming or arranging a resin member or a resin film on the bonding layer;
5. The bonding layer evaluation method according to claim 4, wherein the temperature of the bonding layer is measured through the resin member or the resin film. 5. The method of evaluating a bonding layer according to claim 4, wherein the life or deterioration of the bonding layer is evaluated from a temperature change for a predetermined time. A first substrate, a thin film heater formed on a first surface of the first substrate, a temperature probe formed on the first surface of the first substrate, and a second substrate of the first substrate. and a film made of In (indium) or In alloy (indium alloy) formed on the second Ni—P film (nickel phosphorous). a heater chip having
a second substrate on which a second Ni—P film (nickel phosphorous) is formed;
a current power supply device that supplies current to the thin film heater;
a voltage measuring device for measuring the voltage across the terminals of the temperature probe;
a heater cooler that maintains the second substrate at a predetermined temperature;
Equipped with a temperature measuring instrument that measures temperature without contact,
forming a bonding layer between the film made of In (indium) or the In alloy (indium alloy) and the second Ni—P film (nickel phosphorus);
The bonding layer evaluation apparatus, wherein the temperature measuring device measures the temperature of the bonding layer. further comprising a positioning device for positioning the bonding layer and the temperature measuring device;
a bonding layer is formed between the plurality of heater chips and the second substrate;
8. The bonding layer evaluation apparatus according to claim 7, wherein the temperature measuring device and the bonding layer are positioned by the positioning device to measure the temperature of the bonding layer.