JP2021132225A - ウエハ裏面における堆積の低減のための可変温度ハードウェアおよび方法 - Google Patents
ウエハ裏面における堆積の低減のための可変温度ハードウェアおよび方法 Download PDFInfo
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- JP2021132225A JP2021132225A JP2021084325A JP2021084325A JP2021132225A JP 2021132225 A JP2021132225 A JP 2021132225A JP 2021084325 A JP2021084325 A JP 2021084325A JP 2021084325 A JP2021084325 A JP 2021084325A JP 2021132225 A JP2021132225 A JP 2021132225A
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 230000009467 reduction Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 52
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000012545 processing Methods 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims abstract description 30
- 238000005234 chemical deposition Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 210000000003 hoof Anatomy 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- 238000011282 treatment Methods 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000005137 deposition process Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 0 CC1C(*)=CCC1 Chemical compound CC1C(*)=CCC1 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum Chemical class 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Abstract
Description
本出願は、2015年12月17日に出願された、米国出願第14/972,205号の一部継続出願であり、その全ての内容は本明細書に援用される。
Claims (20)
- 化学堆積装置において有用なプロセス・チューニング・キットであって、キャリアリング、1セットの3つの蹄鉄体、および複数セットの3つのシムを備え、
前記シムは、上面、前記上面に平行な下面、端壁、前記端壁から延びるU字型の側壁、および前記上面と前記下面との間に延びるボアを有し、第1セットの3つのシムは同じ厚さを有し、第2セットの前記シムは、前記第1セットのシムと異なる厚さを有し、
前記蹄鉄体は、上面、前記上面に平行な下面、端壁、前記端壁から延びるU字型の側壁、前記上面と前記下面との間に延びるボア、および前記端壁において開口し前記上面にわたって半分より短く延びるスロットを有し、前記ボアは、前記シムの前記ボアと同じ直径を有し、
前記キャリアリングは、上面、前記上面に平行な下面、外側壁、内側壁、および下面から延びる3つの整合ピンを有する、キット。 - 請求項1に記載のキットであって、
前記シムは、異なる厚さを有する少なくとも10のセットを含む、キット。 - 請求項1に記載のキットであって、
前記蹄鉄体の前記ボアは、前記ボアの上端に外向きにテーパが付けられている、キット。 - 請求項1に記載のキットであって、
前記キャリアリング、蹄鉄体、およびシムは、高純度アルミナからなる、キット。 - 請求項1に記載のキットであって、
前記蹄鉄体は、約0.8インチ(約2センチ)の長さ、約0.5インチ(約1.3センチ)の幅、約0.5インチ(約1.3センチ)の厚さを有し、前記ボアは、約0.15インチ(約0.38センチ)の直径を有し、前記スロットは、約0.19インチ(約0.48センチ)の幅および約0.25インチ(約0.64センチ)の高さを有し、前記ボアは、前記スロットと一直線に並び、前記側壁は、前記ボアの中心から測定して約0.26インチ(約0.66センチ)の半径を有する半円部によって接続されている1対の平行直線部を有し、前記ボアは、前記下面から約0.16インチ(約0.41センチ)延びる同径部と、前記蹄鉄体の前記上面の中へ延びる円錐部とを有し、前記円錐部は、約80°の角度の面取面を形成し、前記スロットは、前記端壁および上面に沿って面取りされた縁部を有する、キット。 - 請求項1に記載のキットであって、
前記シムは、約0.8インチ(約2センチ)の長さ、約0.5インチ(約1.3センチ)の幅、約0.15インチ(約0.38センチ)の直径を有するボア、および0.0465インチ(約0.1181センチ)、0.0470インチ(約0.1194センチ)、0.0475インチ(約0.1207センチ)、0.0480インチ(約0.1219センチ)、0.0485インチ(約0.1232センチ)、0.0490インチ(約0.1245センチ)、0.0495インチ(約0.1257センチ)、0.0500インチ(約0.127センチ)、0.0505インチ(約0.1283センチ)、0.0510インチ(約0.1295センチ)、0.0515インチ(約0.1308センチ)、0.0520インチ(約0.1321センチ)、0.0525インチ(約0.1334センチ)、0.0530インチ(約0.1346センチ)、0.0535インチ(約0.1359センチ)、0.0540インチ(約0.1372センチ)、0.0545インチ(約0.1384センチ)、0.0550インチ(約0.1397センチ)、0.0555インチ(約0.1410センチ)、0.0560インチ(約0.1422センチ)、0.0565インチ(約0.1435センチ)、0.0570インチ(約0.1448センチ)、0.0575インチ(約0.1461センチ)、0.0580インチ(約0.1473センチ)、0.0585インチ(約0.1486センチ)、0.0590インチ(約0.1499センチ)、0.0595インチ(約0.1511センチ)、0.0600インチ(約0.1524センチ)、0.0605インチ(約0.1537センチ)、0.0610インチ(約0.1549センチ)、または0.0615インチ(約0.1562センチ)の厚さを有する、キット。 - 請求項1に記載のキットであって、
前記キャリアリングは、約15インチ(約38.1センチ)の外径、約11.7インチ(約29.7センチ)の内径、約0.1インチ(約0.3センチ)の厚さ、3つの整合ピン、ならびに前記内壁および前記上面の中へ延びる環状凹部を有し、前記整合ピンのそれぞれは、前記下面から約0.06インチ(約0.15センチ)延びる同径部と前記整合ピンの自由端に延びるテーパ部とを伴う約0.2インチ(約0.5センチ)の長さを有し、前記環状凹部は、約11.9インチ(約30.2センチ)の直径を有し前記上面から約0.03インチ(約0.08センチ)延びる垂直壁と、前記内壁から約0.08インチ(約0.20センチ)延びる水平壁とによって形成される、キット。 - 請求項1に記載のキットを備える台座アセンブリであって、
前記台座アセンブリは、前記シムが前記蹄鉄体の下に配置され、前記キャリアリングが前記蹄鉄体上に支持される3つの長方形開口部を含む、台座アセンブリ。 - 請求項8に記載の台座アセンブリであって、
前記台座アセンブリは、前記シムの前記ボアを貫通し前記蹄鉄体の前記ボアの途中まで延びる位置決めピンを備え、前記キャリアリングの前記整合ピンは、前記蹄鉄体の前記ボアの中へ延びる、台座アセンブリ。 - 化学堆積装置において有用なプロセス・チューニング・キットのシムであって、
前記シムは、上面、前記上面に平行な下面、端壁、前記端壁から延びるU字型の側壁、および前記上面と前記下面との間に延びるボアを有する、および前記上面と前記下面との間に延びるボアを有する、シム。 - 請求項10に記載のシムであって、
前記シムは、誘電体セラミック材料からなり、約0.8インチ(約2センチ)の長さ、約0.5インチ(約1.3センチ)の幅、約0.15インチ(約0.38センチ)の直径を有するボア、および0.0465インチ(約0.1181センチ)、0.0470インチ(約0.1194センチ)、0.0475インチ(約0.1207センチ)、0.0480インチ(約0.1219センチ)、0.0485インチ(約0.1232センチ)、0.0490インチ(約0.1245センチ)、0.0495インチ(約0.1257センチ)、0.0500インチ(約0.127センチ)、0.0505インチ(約0.1283センチ)、0.0510インチ(約0.1295センチ)、0.0515インチ(約0.1308センチ)、0.0520インチ(約0.1321センチ)、0.0525インチ(約0.1334センチ)、0.0530インチ(約0.1346センチ)、0.0535インチ(約0.1359センチ)、0.0540インチ(約0.1372センチ)、0.0545インチ(約0.1384センチ)、0.0550インチ(約0.1397センチ)、0.0555インチ(約0.1410センチ)、0.0560インチ(約0.1422センチ)、0.0565インチ(約0.1435センチ)、0.0570インチ(約0.1448センチ)、0.0575インチ(約0.1461センチ)、0.0580インチ(約0.1473センチ)、0.0585インチ(約0.1486センチ)、0.0590インチ(約0.1499センチ)、0.0595インチ(約0.1511センチ)、0.0600インチ(約0.1524センチ)、0.0605インチ(約0.1537センチ)、0.0610インチ(約0.1549センチ)、または0.0615インチ(約0.1562センチ)の厚さを有する、シム。 - 化学堆積装置において有用なプロセス・チューニング・キットの蹄鉄体であって、上面、前記上面に平行な下面、端壁、前記端壁から延びるU字型の側壁、前記上面と前記下面との間に延びるボア、および前記端壁において開口し前記上面にわたって半分より短く延びるスロットを有する、蹄鉄体。
- 請求項12に記載の蹄鉄体であって、
前記蹄鉄体は、誘電体セラミック材料からなり、約0.8インチ(約2センチ)の長さ、約0.5インチ(約1.3センチ)の幅、約0.5インチ(約1.3センチ)の厚さを有し、前記ボアは、約0.15インチ(約0.38センチ)の直径を有し、前記スロットは、約0.19インチ(約0.48センチ)の幅および約0.25インチ(約0.64センチ)の高さを有し、前記ボアは、前記スロットと一直線に並び、前記側壁は、前記ボアの中心から測定して約0.26インチ(約0.66センチ)の半径を有する半円部によって接続されている1対の平行直線部を有し、前記ボアは、前記下面から約0.16インチ(約0.41センチ)延びる同径部と、前記蹄鉄体の前記上面の中へ延びる円錐部とを有し、前記円錐部は、約80°の角度の面取り面を形成し、前記スロットは、前記端壁および上面に沿って面取りされた縁部を有する、蹄鉄体。 - 化学堆積装置において有用なプロセス・チューニング・キットのキャリアリングであって、上面、前記上面に平行な下面、外側壁、内側壁、および前記下面から延びる3つの整合ピンを有する、キャリアリング。
- 請求項14に記載のキャリアリングであって、
前記キャリアリングは、誘電体セラミック材料からなり、約15インチ(約38.1センチ)の外径、約11.7インチ(約29.7センチ)の内径、約0.1インチ(約0.3センチ)の厚さ、3つの整合ピン、および前記内壁および前記上面の中へ延びる環状凹部を有し、前記整合ピンのそれぞれは、前記下面から約0.06インチ(約0.15センチ)延びる同径部と前記整合ピンの自由端に延びるテーパ部とを伴う約0.2インチ(約0.5センチ)の長さを有し、前記環状凹部は、約11.9インチ(約30.2センチ)の直径を有し前記上面から約0.03インチ(約0.08センチ)延びる垂直壁と、前記内壁から約0.08インチ(約0.2センチ)延びる水平壁とによって形成される、キャリアリング。 - 化学堆積装置において有用なプロセス・チューニング・キットのシムセットであって、
各シムは、上面、前記上面に平行な下面、端壁、前記端壁から延びるU字型の側壁、および前記上面と前記下面との間に延びるボア、および前記上面と前記下面との間に延びるボアを有し、前記シムセットは、それぞれが同じ厚さを有する第1群のシムと、それぞれが同じ厚さを有する第2群のシムとを含み、前記第1群の厚さは、第2群の厚さと異なる、シムセット。 - 請求項16に記載のシムセットであって、
前記シムは、異なる厚さを有する少なくとも10のセットを含む、シムセット。 - 請求項16に記載のシムセットであって、
各シムは、誘電体セラミック材料からなり、約0.8インチ(約2センチ)の長さ、約0.5インチ(約1.3センチ)の幅、約0.15インチ(約0.38センチ)の直径を有するボア、および0.0465インチ(約0.1181センチ)、0.0470インチ(約0.1194センチ)、0.0475インチ(約0.1207センチ)、0.0480インチ(約0.1219センチ)、0.0485インチ(約0.1232センチ)、0.0490インチ(約0.1245センチ)、0.0495インチ(約0.1257センチ)、0.0500インチ(約0.127センチ)、0.0505インチ(約0.1283センチ)、0.0510インチ(約0.1295センチ)、0.0515インチ(約0.1308センチ)、0.0520インチ(約0.1321センチ)、0.0525インチ(約0.1334センチ)、0.0530インチ(約0.1346センチ)、0.0535インチ(約0.1359センチ)、0.0540インチ(約0.1372センチ)、0.0545インチ(約0.1384センチ)、0.0550インチ(約0.1397センチ)、0.0555インチ(約0.1410センチ)、0.0560インチ(約0.1422センチ)、0.0565インチ(約0.1435センチ)、0.0570インチ(約0.1448センチ)、0.0575インチ(約0.1461センチ)、0.0580インチ(約0.1473センチ)、0.0585インチ(約0.1486センチ)、0.0590インチ(約0.1499センチ)、0.0595インチ(約0.1511センチ)、0.0600インチ(約0.1524センチ)、0.0605インチ(約0.1537センチ)、0.0610インチ(約0.1549センチ)、または0.0615インチ(約0.1562センチ)の厚さを有する、シムセット。 - 化学堆積装置において半導体基板を処理する方法であって、
セラミック製キャリアリング上の前記基板を前記化学堆積装置の真空チャンバに搬送して、前記キャリアリングを支持する1セットのセラミック製蹄鉄体およびセラミック製シムを有する台座アセンブリ上に前記キャリアリングを設置し、前記蹄鉄体は前記キャリアリングの下面から延びる整合ピンを受けるボアを有し、前記基板は前記基板の裏面が前記キャリアリングの上面から所定のオフセット距離に位置するように、前記台座アセンブリ上の最小接触領域支持体によって前記キャリアリングから持ち上げられ、
前記基板の裏面における堆積が最小となるように、前記基板を加熱して前記所定のオフセット距離を維持しながら前記基板に材料の層を堆積させること、
を備える、方法。 - 請求項19に記載の方法であって、
前記台座アセンブリは、環状凹部と、前記台座アセンブリの外周の中に延びて前記環状凹部に開口する3つの長方形開口部とを含み、前記長方形開口部のそれぞれは、シムと、前記台座アセンブリ上の位置決めピンによって前記シムに取り付けられている蹄鉄体とを有し、前記位置決めピンは、前記シムのボアを貫通し前記蹄鉄体のボアの途中まで延び、前記シムのそれぞれは、同じ厚さを有し、前記基板のベベルエッジから3mmの位置における裏面堆積を50Å以下に制限する前記所定のオフセット距離を提供する、方法。
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US (1) | US9870917B2 (ja) |
JP (4) | JP6940273B2 (ja) |
KR (2) | KR102564322B1 (ja) |
CN (2) | CN106947958B (ja) |
SG (1) | SG10201610451QA (ja) |
TW (1) | TWI728016B (ja) |
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US9870917B2 (en) * | 2015-12-17 | 2018-01-16 | Lam Research Corporation | Variable temperature hardware and methods for reduction of wafer backside deposition |
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CN108315720A (zh) * | 2018-01-31 | 2018-07-24 | 上海集成电路研发中心有限公司 | 一种提高膜厚均匀性的装置及方法 |
WO2019204185A1 (en) * | 2018-04-18 | 2019-10-24 | Applied Materials, Inc. | Two piece shutter disk assembly with self-centering feature |
US20220136107A1 (en) * | 2019-01-31 | 2022-05-05 | Lam Research Corporation | Showerhead with configurable gas outlets |
US11280222B2 (en) * | 2019-02-26 | 2022-03-22 | The Boeing Company | Bulkhead shims for curvilinear components |
US11709099B2 (en) | 2019-07-01 | 2023-07-25 | Snap-On Incorporated | Method and system for calibrating imaging system |
US11010908B2 (en) * | 2019-07-01 | 2021-05-18 | Snap-On Incorporated | Apparatus with component aligner |
US11555743B2 (en) | 2019-07-01 | 2023-01-17 | Snap-On Incorporated | Method and system for calibrating imaging system |
US10823553B1 (en) * | 2019-07-01 | 2020-11-03 | Snap-On Incorporated | Apparatus with component aligner |
KR20230037057A (ko) | 2019-08-16 | 2023-03-15 | 램 리써치 코포레이션 | 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착 |
KR20210042749A (ko) | 2019-10-10 | 2021-04-20 | 삼성전자주식회사 | 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치 |
JP2023502250A (ja) * | 2019-11-26 | 2023-01-23 | ラム リサーチ コーポレーション | 基板処理ツール用のキャリアリングから台座へのキネマティックマウント |
CN115407087A (zh) * | 2021-05-26 | 2022-11-29 | 长鑫存储技术有限公司 | 纳米探针测试的样品固定机构、测试装置及样品测试方法 |
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Publication number | Publication date |
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JP2017135366A (ja) | 2017-08-03 |
JP2021132226A (ja) | 2021-09-09 |
CN113235071B (zh) | 2023-12-01 |
CN113235071A (zh) | 2021-08-10 |
TWI728016B (zh) | 2021-05-21 |
SG10201610451QA (en) | 2017-07-28 |
JP7303245B2 (ja) | 2023-07-04 |
JP7117419B2 (ja) | 2022-08-12 |
KR102564322B1 (ko) | 2023-08-04 |
TW201730932A (zh) | 2017-09-01 |
KR20230117322A (ko) | 2023-08-08 |
JP2023103331A (ja) | 2023-07-26 |
US20170178898A1 (en) | 2017-06-22 |
CN106947958B (zh) | 2021-04-09 |
CN106947958A (zh) | 2017-07-14 |
US9870917B2 (en) | 2018-01-16 |
KR20170074773A (ko) | 2017-06-30 |
JP6940273B2 (ja) | 2021-09-22 |
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