JP2021130842A - Plasma treatment apparatus, bias applying mechanism, and substrate palette - Google Patents

Abstract

To enable a substrate to be precisely mounted to a bias electrode, and a distance between the substrate and the bias electrode to be kept constant in an apparatus of performing a plasma treatment while a bias voltage is applied to the substrate.SOLUTION: A substrate palette 10 to which a substrate to be treated 100 is mounted and which is mounted together with a substrate 100 to a plasma treatment apparatus includes a rear surface electrode 15 for applying a bias which is arranged in a vicinity of a surface opposite to a surface to be treated of the substrate 100 when the substrate to be treated 100 is mounted, and a connection part which is electrically connected to the rear surface electrode 15 and electrically connected to a power source for supplying a bias voltage in a side of the plasma treatment apparatus when the substrate palette 10 is mounted to the plasma treatment apparatus.SELECTED DRAWING: Figure 4

Description

The present invention relates to a plasma processing apparatus, a mechanism for applying a bias potential to a substrate in the plasma processing apparatus, and a substrate pallet.

Substrate processing using plasma is an indispensable step in the manufacturing process of optical parts, electronic parts, semiconductor devices, and the like. The plasma processing device is a device for treating the surface of a substrate with plasma, and is used for etching, cleaning, and the like. It is also used as a film forming apparatus for forming a thin film on a substrate using plasma, and in the present application, such a film forming apparatus is also included in the "plasma processing apparatus". Examples of the film forming apparatus using plasma include a sputtering apparatus, a plasma-assisted CVD apparatus, and an atomic layer deposition apparatus.

In a plasma processing apparatus, it is widely used to supply high-frequency power to a substrate mount to give a bias potential to the substrate. When the substrate is biased to a negative potential with respect to the plasma, the positive ions in the plasma accelerate toward the substrate, and the etching rate can be increased. Further, since the energy of ions reaching the substrate can be controlled by the bias potential, it also contributes to the surface modification adjustment of the substrate. Further, since the ions are vertically incident on the substrate due to the bias action, the ions can reach the bottom surface of the concave portion (groove portion) of the substrate on which the unevenness is formed and can be etched. In a film forming apparatus such as sputtering, not only can a dense film be formed by a biasing action, but also a substrate having a high aspect ratio can be embedded in an opening without generating voids.

Patent No. 6533511

As a plasma processing device, in-line type, interback type, multi-chamber type, etc., which perform transfer processing in units of one or a small number of boards, are known because the boards are replaced while the processing chamber is always kept in a vacuum state. Has been done. In these devices, a loading / unloading chamber (load lock chamber) is provided separately from the processing chamber, and a substrate or a substrate pallet on which several substrates are mounted is charged therein, and after the charging / unloading chamber is decompressed, the pressure is reduced. The substrate or substrate pallet inside the substrate is transported to the processing chamber. The substrate or substrate pallet is mounted on the substrate mount by a transfer robot in a vacuum chamber. A bias electrode is attached and fixed to the substrate mount in the vacuum chamber, and a desired bias is applied to the substrate by arranging the substrate or the substrate pallet at a predetermined position on the substrate mount. If the accuracy of the transfer robot is poor and the substrate or the substrate pallet is mounted out of the predetermined position, the bias applied to the substrate may change and the processing as designed may not be executed.

The substrate or the substrate pallet mounted on the substrate mount may be processed while being fixed in the chamber, or may be processed while the substrate is moved by the drive mechanism. There is a carousel type sputtering device as one of the examples of processing while moving the substrate.

The carousel type sputtering apparatus is an apparatus in which a plurality of substrates to be deposited are mounted on a rotating drum in which a sputtering target is arranged around the drum, and sputtering deposition is performed while rotating the drum. By such a film formation, a plurality of substrates can be processed at one time.

Patent Document 1 describes that in a carousel type sputtering apparatus, a substrate is attached to a rotating drum (“board holder 13” in the term of Patent Document 1) provided with a bias electrode. As the rotating drum rotates, the substrate passes in front of the sputtering target, and film formation and plasma treatment are performed while moving the substrate. If the substrate position fluctuates due to centrifugal force or the like during the rotation of the rotating drum, the distance between the bias electrode on the rotating drum and the substrate changes, and the substrate bias fluctuates. The relative position of the substrate and the bias electrode needs to be kept constant during the rotation of the drum.

Regarding the application of bias to the rotating drum, the larger the area of the bias electrode, the larger the power supply required. Therefore, it is desirable that the ions in the plasma are attracted only to the substrate. That is, in order to efficiently apply the bias to the substrate, it is necessary to optimize the shape of the bias electrode and the relative position between the substrate and the bias electrode for each substrate. However, in a device that applies a bias using a bias electrode fixed in the processing chamber, it is not always possible to select the optimum shape and arrangement of the bias electrode with respect to the substrate.

The present invention solves such a problem, in a plasma processing apparatus, the substrate is attached to the bias electrode with high accuracy, the distance between the substrate and the bias electrode is maintained constant during processing, and the bias electrode is provided for each substrate. The purpose is to be able to optimize.

According to the first aspect of the present invention, it is a substrate pallet to which a substrate to be processed is attached and is attached together with the substrate to a plasma processing apparatus, and when the substrate to be processed is attached, the processed surface of the substrate is. A back electrode for bias arranged near the opposite surface and a power supply for supplying a bias voltage of the plasma processing device when the substrate pallet is attached to the plasma processing device by being electrically connected to the back electrode. A substrate pallet comprising an electrically connected connection is provided.

In the substrate pallet, the back electrode is attached to an elongated metal member, and the connection portion is a back electrode terminal provided by being electrically connected to the surface of the metal member opposite to the back electrode, and is a metal member. Further, it is desirable to further provide a spacer that separates the back surface electrode from the substrate to be processed and keeps the distance between the back surface electrode and the substrate at a predetermined value.

It is desirable that the substrate pallet further includes a shield member for shielding the plasma.

The plasma processing device to which the substrate pallet is attached is provided with a carousel type rotating drum on which the substrate pallet is attached, and the rotating drum is provided with a power supply contact to which a power supply for supplying a bias voltage is connected. It is desirable that the connecting portion of the above is configured to come into contact with the power feeding contact on the rotating drum side when the substrate pallet is attached to the rotating drum.

The board pallet attached to the rotating drum includes a flat plate-shaped pallet body to which one or more boards are attached, and a handle portion that protrudes from the pallet body and is hooked by a hook on the rotating drum side to convey the board pallet. Can be prepared.

According to the second aspect of the present invention, a plasma processing chamber for taking in the above-mentioned substrate pallet and performing plasma processing is provided, and the plasma processing chamber is supplied with a power supply to which the connection portion of the substrate pallet comes into contact when the substrate pallet is taken in. A plasma processing device is provided that comprises a contact, to which a power source for bias voltage supply is connected.

The plasma processing chamber can be provided with a rotating drum that takes in the substrate pallets one by one and mounts them in the rotating direction.

The plasma processing chamber can be a sputtering chamber for sputter film formation using plasma.

According to the third aspect of the present invention, it is provided in the plasma processing apparatus that takes in the above-mentioned substrate pallet and performs plasma processing, and when the substrate pallet is taken into the plasma processing chamber of the plasma processing apparatus, the connection portion of the substrate pallet is formed. It comprises a feeding contact that abuts, and the feeding contact is provided with a bias application mechanism to which a power source for supplying a bias voltage is connected.

FIG. 1 is a schematic view showing a basic configuration of a carousel type bias sputtering apparatus for carrying out the present invention. FIG. 2 is a diagram showing a configuration in which a substrate pallet according to an embodiment of the present invention is viewed from the front side (film formation target surface side). FIG. 3 is a diagram showing a configuration in which the same substrate pallet is viewed from the back surface side (rotating shaft side of the rotating drum). FIG. 4 is a front view of the state in which the back electrode assembly is removed from the pallet body. FIG. 5 is a view of the back surface electrode assembly removed from the pallet body as viewed from the back surface side. FIG. 6 is a front view of the back surface electrode and the metal member removed from the back surface electrode assembly. FIG. 7 is a view of the back surface electrode and the metal member removed from the back surface electrode assembly as viewed from the back surface side. FIG. 8 is a cross-sectional view showing a simplified configuration of the substrate pallet mounting portion of the rotating drum. FIG. 9 is a diagram illustrating a substrate pallet mounting operation by the board pallet mounting portion. FIG. 10 is a schematic view showing a configuration example of a multi-chamber plasma processing apparatus as another embodiment of the plasma processing apparatus of the present invention, and shows a state before the substrate pallet is carried into the plasma processing chamber. FIG. 11 shows a state in which the substrate pallet is carried into the plasma processing chamber and mounted on the substrate stage in the plasma processing apparatus shown in FIG. FIG. 12 is a schematic view showing a configuration example of a pass-through film-forming type sputtering apparatus as yet another embodiment of the plasma processing apparatus of the present invention. FIG. 13 is a diagram showing another embodiment of the substrate pallet. FIG. 14 is a diagram showing still another embodiment of the substrate pallet.

FIG. 1 is a schematic view showing a basic configuration of a carousel type bias sputtering apparatus as an example of a plasma processing apparatus for carrying out the present invention. Generally, a reactive sputtering apparatus includes a means for supplying a reactive gas into a reaction vessel in which a conductive target is arranged, and deposits a compound generated by the reaction between the sputtered particles of the conductive target and the reactive gas on a substrate. It is configured as follows.

The carousel type bias sputtering apparatus shown in FIG. 1 takes in the preparation / take-out chamber 1 for taking in and out the substrate to be processed (deposition target) from the outside and the substrate charged in the preparation / take-out chamber 1. It is provided with a sputtering chamber 2 for performing plasma treatment, in this case, sputtering film formation. The charging / taking-out chamber 1 and the sputter chamber 2 are separated by a gate valve 3. The sputtering chamber 2 includes a rotating drum (carousel drum) 4 and a sputtering cathode 6 facing the outer peripheral surface of the rotating drum 4. A rotary cathode may be used for the sputtered cathode 6. The sputter chamber 2 is further provided with an oxidation source 5 facing the outer peripheral surface of the rotating drum 4. The rotary drum 4 is provided with a plurality (12 in this example) of substrate pallet mounting portions 40 for mounting one or a plurality of substrate pallets to be film-formed along the outer periphery in the rotation direction. ..

In order to perform sputtering with this apparatus, first, the substrate to be film-formed is set in the charging / taking-out chamber 1. Specifically, the cassette 7 in which the substrate is set is set on the rotary table (not shown) in the loading / unloading chamber 1 with the gate valve 3 closed, that is, while the sputtering chamber 2 is kept in a vacuum. do.

A plurality of substrate pallets 10 to which one or a plurality of substrates are attached are housed in the cassette 7. In this example, 12 board pallets 10 are attached to the rotary drum 4, and the board pallets 10 are set in 12 slots on one side of 24 slots in the cassette 7. The 12 slots on the opposite side are for accommodating the substrate pallet 10 after the film forming process.

After setting the cassette 7 in the charging / taking-out chamber 1, the pressure in the charging / taking-out chamber 1 is reduced. After the charging / taking-out chamber 1 has reached a predetermined degree of vacuum, the gate valve 3 is opened, and the substrate pallet after the film forming process mounted on the substrate pallet mounting portion 40 provided along the direction of the rotating drum 4 is opened. Return one by one to the empty slot of cassette 7. Subsequently, the cassette 7 is rotated 180 degrees by the rotary table, and the substrate pallets 10 to be film-formed are mounted one by one on the substrate pallet mounting portion 40 of the rotary drum 4.

After all the substrate pallets 10 to be film-formed in the cassette 7 are mounted on the substrate pallet mounting portion 40 of the rotary drum 4, the gate valve 3 is closed and the film-forming process is started in the sputter chamber 2. On the other hand, the charging / taking-out chamber 1 is returned to atmospheric pressure, and the cassette 7 containing the substrate pallet after the film-forming treatment is taken out from the charging / taking-out chamber 1.

FIG. 2 is a diagram showing a configuration in which the substrate pallet 10 according to an embodiment of the present invention is viewed from the front side (deposition target surface side), and FIG. 3 shows the substrate pallet 10 on the back surface side (rotary drum 4). It is a figure which shows the structure seen from the rotation axis side of. The back surface side of the substrate pallet 10 is attached to the outer peripheral surface of the rotating drum 4. This mounting structure will be described later with reference to FIG.

The substrate pallet 10 is a flat plate-shaped pallet main body 11 to which one or more (three in this example) substrates 100 are attached, and a rotating drum that protrudes upward in the drawing from the pallet main body 11 to convey the substrate pallet 10. It is composed of a handle portion 12 that can be hooked by a hook on the 4 side. On the back surface of the substrate pallet 10, a back surface electrode assembly 13 for applying a bias electrode to a surface opposite to the film formation target surface of the substrate 100 when the film formation target substrate 100 is attached is provided. A part of the back electrode assembly 13 is provided with a back electrode terminal 14 that is electrically connected to a high frequency source on the rotating drum 4 side when the substrate pallet 10 is attached to the rotating drum 4.

FIG. 4 is a view of the back surface electrode assembly 13 removed from the pallet body 11 as viewed from the front side (board pallet body 11 side), and FIG. 5 is a view showing the same state from the back surface side (back surface electrode assembly 13 side). It is a view.

The back surface electrode assembly 13 includes a back surface electrode 15 for bias sputtering, which is arranged in the vicinity of a surface of the substrate 100 opposite to the surface of the substrate 100 to be formed when the substrate 100 to be formed is attached to the pallet body 11. .. The back electrode 15 is attached to one elongated metal member 16, and the back electrode terminal 14 is electrically connected to the surface of the metal member 16 opposite to the back electrode 15. .. With this configuration, the back surface electrode 15 can be arranged with high accuracy with respect to the substrate 100, and a high frequency can be applied only to the substrate 100. The back electrode assembly 13 is also provided with a spacer 17 made of a ceramic such as an insulator such as alumina. The spacer 17 separates the back surface electrode 15 and the metal member 16 from the pallet body 11, and keeps the distance between the back surface electrode 15 and the substrate 100 attached to the pallet body 11 at a predetermined value. That is, the spacer 17 can maintain a constant distance between the substrate 100 and the back surface electrode 15.

FIG. 6 is a view of the back surface electrode 15 and the metal member 16 removed from the back surface electrode assembly 13 as viewed from the front side (back surface electrode 15 side), and FIG. 7 is a view of the same state as viewed from the back surface side. be.

A shield member 18 is provided on the back surface of the back surface electrode assembly 13. The shield member 18 is for generating plasma only on the front surface of the substrate 100, and shields high-frequency power so that plasma is not generated on the back surface side of the substrate 100. As a result, the back surface electrode 15 and the metal member 16 are prevented from being scraped by ions in the plasma, and high-frequency power is applied only to the substrate 100 side.

The size of the back surface electrode 15 is preferably about the same as that of the substrate 100 in order to effectively apply the bias to the substrate 100. However, at the end portion of the back surface electrode 15, the film is sharply scraped by the edge effect (ions are concentrated due to the concentration of the electric field). The back electrode 15 may be slightly larger than the substrate 100.

FIG. 8 is a diagram showing a simplified configuration of the substrate pallet mounting portion 40. The board pallet mounting unit 40 constitutes a part of a mounting mechanism that takes in the board pallets 10 one by one and mounts them along the rotation direction of the rotating drum 4.

The board pallet mounting portion 40 includes a hook 41 for hooking the handle portion 12 of the board pallet 10 to hold the board pallet 10, and a fixing member 42 for sandwiching and fixing the handle portion 12 on the opposite side of the hook 41. Further, the substrate pallet mounting portion 40 includes a power feeding contact 43 in contact with the back surface electrode terminal 14, which is an electrode terminal for bias sputtering provided on the substrate pallet 10. The power supply contact 43 is connected to a high frequency power supply outside the sputter chamber 2 via a power supply line 44. The fixing member 42 and the power feeding contact 43 are pressed against the substrate pallet 10 by the pressing member 45.

Further, the substrate pallet mounting portion 40 is provided with a stopper 46 on the lower side of the substrate pallet 10. The upper handle portion 12 of the substrate pallet 10 is fixed, but the lower side is not fixed. Therefore, when the rotating drum 4 rotates, the lower side of the substrate pallet 10 is swung outward by centrifugal force. The stopper 46 prevents the lower side of the substrate pallet 10 from swinging outward.

FIG. 9 is a diagram illustrating a mounting operation of the board pallet 10 by the board pallet mounting portion 40.

In order to mount the substrate pallet 10, the substrate pallet mounting portion 40 pushes the pressing member 45 in the direction of the arrow by a drive mechanism (not shown) to open the hook 41. At this time, the transport arm 47, which operates in conjunction with the board pallet mounting portion 40, holds the handle portion 12 of the board pallet 10 and transports the board pallet 10. As the drive mechanism of the pressing member 45, for example, a rotating shaft is used, and a mechanism is used in which the pressing member 45 is linearly moved in the arrow direction by the rotation of the rotating shaft. The hook 41 hooks the handle portion 12 transported by the transport arm 47, and the mounted state shown in FIG. 8 is obtained.

When the pressing on the pressing member 45 by the above-mentioned drive mechanism is stopped, the pressing member 45 is pressed against the substrate pallet 10 by the urging of the spring, and the substrate pallet 10 is held by the hook 41 and the fixing member 42. At the same time, the power feeding contact 43 is pressed against the back electrode terminal 14 and electrically connected. By using a stretchable member such as a leaf spring (not shown) for a part of the power feeding line 44, stable power feeding from the power feeding contact 43 to the back surface electrode terminal 14 becomes possible.

In this way, instead of attaching the substrate to the rotating drum provided with the electrodes, the substrate 100 and the back surface electrode 15 are integrated and attached to the rotating drum 4. As a result, in the load lock type carousel type bias sputtering apparatus, the back surface electrode 15 as a bias electrode can be accurately arranged with respect to the substrate 100, and the distance between the substrate 100 and the back surface electrode 15 is kept constant. be able to.

As described above, the substrate 100 to be formed is attached, and the substrate 100 to be formed is attached to the substrate pallet 10 attached together with the substrate 100 to the plasma processing apparatus, or the carousel type sputtering apparatus in this embodiment. At that time, the back electrode 15 for bias, which is arranged in the vicinity of the surface opposite to the surface to be formed on the substrate, and the back electrode 15 are electrically connected, and the substrate pallet 10 is attached to the carousel type sputtering apparatus. Since the structure is provided with a back surface electrode terminal 14 that is electrically connected to the high frequency supply source on the sputtering apparatus side when the film is formed, when the substrate 100 to be formed is attached to the substrate pallet 10, the substrate 100 and the substrate 100 are attached. The back surface electrode 15 is integrated and attached to the rotating drum 4 in that state. As a result, in the load lock type carousel type bias sputtering apparatus, the back surface electrode 15 as a bias electrode can be accurately arranged with respect to the substrate 100, and the distance between the substrate 100 and the back surface electrode 15 is kept constant. be able to.

10 and 11 are schematic views showing a configuration example of a multi-chamber plasma etching apparatus as another embodiment of the plasma processing apparatus of the present invention. Here, among the configurations of the multi-chamber plasma etching apparatus 20, illustration and description will be omitted except for the configurations of the plasma processing chamber 21 and related configurations. The plasma processing chamber 21 includes an upper electrode 22 to which high-frequency power is supplied, a lower substrate stage 23, a gas introduction valve 24 to which a gas supply line is connected, and an exhaust valve 25 to which an exhaust system is connected. FIG. 10 shows a state before the substrate pallet 10 is carried into the plasma processing chamber 21, and FIG. 11 shows a state where the substrate pallet 10 is carried into the plasma processing chamber 21 and mounted on the substrate stage 23. The substrate pallet 10 is the same as the substrate pallet 10 shown in FIG. 2, and the same components are numbered the same. The handle portion 12 may not be provided in the case of this embodiment.

First, a transfer robot (not shown) conveys the substrate pallet 10 into the plasma processing chamber 21 and places it on the substrate stage 23. The substrate stage 23 includes a feeding contact 26 corresponding to the feeding contact 43 shown in FIGS. 8 and 9, and the back electrode terminal 14 and the feeding contact 26 come into contact with each other. The power supply contact 26 is connected to a high frequency power supply outside the plasma processing chamber 21 via a power supply line 27. Next, the etching gas is introduced into the plasma processing chamber 21 via the gas introduction valve 24, and high-frequency power is supplied to the upper electrode 22. The etching gas in the plasma processing chamber 21 is excited to generate plasma, and the substrate 100 is etched. At this time, when high-frequency power is supplied to the back surface electrode 15 via the substrate stage 23, the substrate 100 is biased to a negative potential with respect to the plasma, and the etching of the substrate 100 is assisted. Since the substrate 100 and the back electrode 15 for bias are supplied to the substrate stage 23 as a set, the relative positions of the substrate 100 and the back electrode 15 are fixed regardless of the accuracy of the transfer robot, and the substrate 100 The desired bias can be applied to.

FIG. 12 is a schematic view showing a configuration example of a pass-through film-forming type sputtering apparatus as yet another embodiment of the plasma processing apparatus of the present invention. The sputtering apparatus 30 shown in FIG. 12 includes a sputtering chamber 31, sputtering cathodes 32 and 33, a substrate pallet transfer mechanism 34, a power supply line 35 for supplying high-frequency power to the substrate pallet 10, and a gas introduction valve 36 to which a gas supply line is connected. It also includes an exhaust valve 37 to which the exhaust system is connected. When the substrate pallet 10 passes the front surfaces of the sputtering cathodes 32 and 33, a film is deposited on the substrate 100. At that time, high frequency power is applied from the power feeding line 35 to the back electrode 15 of the substrate pallet 10. The power supply line 35 may be a conductive bar extending in a straight line parallel to the transfer route of the substrate pallet 10. During the film formation, the substrate pallet 10 is conveyed by the substrate tray, but since the arrangement of the substrate 100 and the back surface electrode 15 is fixed inside the substrate pallet 10, the relative positions of the substrate and the back surface electrode 15 are always kept constant. be able to.

13 and 14 show other examples of the substrate pallet. These examples are characterized in that the distance between the substrate 100 and the back surface electrode 15 is long at the peripheral edge portion of the substrate 100 and short at the inner peripheral portion of the substrate 100. It is an object of the present invention to alleviate the electric field concentration due to the edge effect of the end portion of the back surface electrode 15 and to uniformly irradiate the entire surface of the substrate 100 with ions. In the example shown in FIG. 13, a step is provided on the peripheral edge of the back surface electrode 15, and in the example shown in FIG. 14, the back surface electrode 15 has an arcuate cross section so that the distance gradually increases from the inner circumference to the outer circumference. It was formed in. Since the back surface electrode 15 is attached to the substrate pallet 100, the back surface electrode 15 can be freely designed, not limited to the examples of FIGS. 13 and 14. Not only can the optimum bias electrode shape be selected according to the substrate shape, but the distance between the bias electrode and the substrate can also be set individually. It is also possible to adjust the backside bias electrode diameter with respect to the substrate diameter.

In the above description, as the embodiment of the present invention, a carousel type bias sputtering apparatus, a plasma etching apparatus, and a through-film deposition type sputtering apparatus have been shown, but other sputtering apparatus, a carousel type etching apparatus, a plasma cleaning apparatus, and a plasma are shown. Any device such as an assisted CVD device or an atomic layer vapor deposition device that uses plasma to process or deposit a substrate and applies a bias to the substrate is not limited.

In the above description, an example in which the back surface electrode terminals are configured as protrusions on the substrate pallet side has been shown, but the electrode terminal protrusions provided on the plasma processing or film forming apparatus side are formed on the flat back surface electrodes provided on the substrate pallet. It may be configured to be in contact.

In the above description, a high frequency power supply is used as the power supply for supplying the bias voltage, but a DC power supply may be used when the conductive material is formed. Even when the insulating material is formed, a pulse bias may be applied using a DC power supply. A bias may be applied by superimposing a high frequency power supply and a DC power supply.

1 Preparation / removal chamber 2 Sputter chamber 3 Gate valve 4 Rotating drum 5 Oxidation source 6 Sputter cathode 7 Cassette 10 Substrate pallet 11 Pallet body 12 Handle part 13 Back electrode assembly 14 Back electrode terminal 15 Back electrode 16 Metal member 17 Spacer 18 Shield member 20 Multi-chamber type plasma etching device 21 Plasma processing room 22 Upper electrode 23 Board stage 24 Gas introduction valve 25 Exhaust valve 26 Power supply contact 27 Power supply line 30 Sputtering device 31 Sputtering room 32 Sputter cathode 33 Sputter cathode 34 Substrate pallet transfer mechanism 35 Power supply line 36 Gas introduction valve 37 Exhaust valve 41 Hook 42 Fixing member 43 High frequency supply electrode 44 Power supply line 45 Pushing member 46 Stopper

Claims (9)

A substrate pallet to which a substrate to be processed is attached and attached to a plasma processing apparatus together with the substrate.
When the substrate to be processed is attached, the back electrode for bias, which is arranged in the vicinity of the surface opposite to the surface to be processed of the substrate,
A connection portion that is electrically connected to the back electrode and is electrically connected to a power source for supplying a bias voltage on the plasma processing apparatus side when the substrate pallet is attached to the plasma processing apparatus.
Board pallet with. In the substrate pallet according to claim 1,
The back electrode is attached to an elongated metal member, and the back electrode is attached to an elongated metal member.
The connection portion is a back surface electrode terminal provided by being electrically connected to a surface of the metal member opposite to the back surface electrode.
A substrate pallet further comprising a spacer that separates the metal member and the back surface electrode from the substrate to be processed and keeps the distance between the back surface electrode and the substrate to be processed at a predetermined value. In the substrate pallet according to claim 1 or 2.
A substrate pallet characterized by further including a shield member that shields plasma. In the substrate pallet according to claim 1,
The attached plasma processing device is provided with a carousel-type rotating drum on which the substrate pallet is mounted, and the rotating drum is provided with a power supply contact to which a power supply for supplying a bias voltage is connected.
The substrate pallet is characterized in that the connection portion of the substrate pallet is in contact with the power feeding contact of the rotary drum when the substrate pallet is attached to the rotary drum. In the board pallet according to claim 4, a flat plate-shaped pallet body to which one or more boards are attached and a flat plate-shaped pallet body.
A handle portion that protrudes from the pallet body and is hooked by a hook on the rotating drum side to convey the substrate pallet.
A substrate pallet characterized by being provided with. A plasma processing chamber for taking in the substrate pallet according to any one of claims 1 to 5 and performing plasma processing is provided.
The plasma processing chamber is provided with a power feeding contact that the connection portion of the substrate pallet comes into contact with when the substrate pallet is taken in.
A plasma processing device to which a power supply for supplying a bias voltage is connected to this power supply contact. In the plasma processing apparatus according to claim 6,
A plasma processing apparatus characterized in that the plasma processing chamber is provided with a rotating drum that takes in the substrate pallets one by one and mounts them in the rotational direction. In the plasma processing apparatus according to claim 6 or 7.
The plasma processing chamber is a plasma processing apparatus characterized in that it is a sputtering chamber for performing sputtering film formation using plasma. Provided in a plasma processing apparatus that takes in the substrate pallet according to any one of claims 1 to 5 and performs plasma processing.
A power supply contact with which the connection portion of the substrate pallet comes into contact with the substrate pallet when the substrate pallet is taken into the plasma processing chamber of the plasma processing apparatus is provided.
A bias application mechanism in which a power supply for supplying a bias voltage is connected to this power supply contact.

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