JP2021129034A - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method Download PDF

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JP2021129034A
JP2021129034A JP2020023084A JP2020023084A JP2021129034A JP 2021129034 A JP2021129034 A JP 2021129034A JP 2020023084 A JP2020023084 A JP 2020023084A JP 2020023084 A JP2020023084 A JP 2020023084A JP 2021129034 A JP2021129034 A JP 2021129034A
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substrate
stage
negative pressure
substrate processing
processing apparatus
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JP7368263B2 (en
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幸一 上野
Koichi Ueno
幸一 上野
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to CN202110153809.8A priority patent/CN113262951A/en
Priority to TW110104593A priority patent/TWI837457B/en
Priority to KR1020210018831A priority patent/KR102655983B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0254—Coating heads with slot-shaped outlet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Abstract

To ensure that application of a coating of process liquid is carried out stably while holding a rectangular substrate on the top face of a stage with a high attracting force.SOLUTION: This invention comprises: a stage having on top face a substrate placement area where a rectangular substrate can be placed; a nozzle having a slit-shaped discharge port for displaying a process liquid; a nozzle movement unit for moving the nozzle upward of the stage; a first negative pressure generation unit for discharging a first gas from a space sandwiched between the underside of the substrate placed on the stage and the stage in the middle of the substrate placement area to generate first negative pressure; an annular recess provided to the periphery of the substrate placement area so as to enclose the space in a plan view from above; and an annular seal member which is an elastic substance provided inside of the recess. The edge of the seal member is exposed from the top face of the stage before a substrate is placed on one hand, and upon placement of a substrate in the substrate placement area, it retreats toward the recess in close contact with the underside of the substrate while being subjected to negative pressure and makes the space airtight.SELECTED DRAWING: Figure 1

Description

この発明は、矩形状の基板、例えば液晶表示装置や有機ＥＬ表示装置等のＦＰＤ用ガラス基板、電子ペーパー用基板等の精密電子装置用基板、半導体パッケージ用基板（以下、単に「基板」と称する）を吸着保持する技術に関するものである。 The present invention relates to a rectangular substrate, for example, a glass substrate for FPDs such as a liquid crystal display device and an organic EL display device, a substrate for a precision electronic device such as a substrate for electronic paper, and a substrate for a semiconductor package (hereinafter, simply referred to as "board"). ) Is related to the technique of adsorbing and holding.

従来、処理液の塗布等の処理を基板に行う基板処理装置では、基板がステージ上に載置された後で、ステージに吸着保持される。つまり、ステージの上面に複数の吸着孔が形成されており、当該吸着孔を介して基板とステージとで挟まれた空間から気体を排出して負圧を発生させる。この負圧により基板はステージに保持される（特許文献１参照）。こうして基板の保持工程が実行された後で、処理液を吐出するスリット状の吐出口を有するノズルがステージの上方において移動して処理液を基板の上面に供給して塗布する（塗布工程）。 Conventionally, in a substrate processing apparatus that performs processing such as coating of a processing liquid on a substrate, the substrate is placed on the stage and then adsorbed and held on the stage. That is, a plurality of suction holes are formed on the upper surface of the stage, and gas is discharged from the space sandwiched between the substrate and the stage through the suction holes to generate a negative pressure. The substrate is held on the stage by this negative pressure (see Patent Document 1). After the substrate holding step is executed in this way, a nozzle having a slit-shaped discharge port for discharging the treatment liquid moves above the stage to supply the treatment liquid to the upper surface of the substrate and apply the treatment liquid (coating step).

特開２０１７−１７４８５５号公報JP-A-2017-174855

しかしながら、近年では基板の反りが比較的大きく、ステージ上で基板をフラットに保持することが難しいケースが発生している。例えばウェーハレベルパッケージ（ＷＬＰ：Ｗａｆｅｒ Ｌｅｖｅｌ Ｐａｃｋａｇｉｎｇ）やパネルレベルパッケージ（ＰＬＰ：Ｐａｎｅｌ Ｌｅｖｅｌ Ｐａｃｋａｇｉｎｇ）といった製造形態で製造される半導体パッケージでは、矩形状のガラス基板上に複数の半導体チップやチップ間の配線などが多層に組み合わされている。それらの熱収縮率や熱膨張率の相違量は単にレジスト層などを積層した半導体基板よりも大きく、反りが大きくなる傾向にある。そのため、矩形状の基板を安定して保持することが難しく、基板への処理液の供給が不安定になることがあった。 However, in recent years, there have been cases where it is difficult to hold the substrate flat on the stage due to the relatively large warpage of the substrate. For example, in a semiconductor package manufactured in a manufacturing form such as a wafer level package (WLP: Wafer Level Packaging) or a panel level package (PLP: Panel Level Packing), a plurality of semiconductor chips or wiring between chips may be formed on a rectangular glass substrate. Are combined in multiple layers. The difference in the coefficient of thermal expansion and the coefficient of thermal expansion is larger than that of a semiconductor substrate on which a resist layer or the like is simply laminated, and the warp tends to be large. Therefore, it is difficult to stably hold the rectangular substrate, and the supply of the processing liquid to the substrate may become unstable.

この発明は上記課題に鑑みなされたものであり、ステージの上面で矩形状の基板を高い吸着力で保持して処理液の塗布を安定して行うことができる基板処理装置および基板処理方法の提供を目的とする。 The present invention has been made in view of the above problems, and provides a substrate processing apparatus and a substrate processing method capable of stably applying a treatment liquid by holding a rectangular substrate on the upper surface of a stage with a high adsorption force. With the goal.

本発明の第１態様は、基板処理装置であって、矩形状の基板を載置可能な基板載置領域を上面に有するステージと、処理液を吐出するスリット状の吐出口を有するノズルと、ノズルをステージの上方において移動させるノズル移動部と、基板載置領域の中央部においてステージに載置された基板の下面とステージとで挟まれた空間から第１気体を排出して第１負圧を発生させる第１負圧発生部と、上方からの平面視で空間を取り囲むように基板載置領域の周縁部に設けられた環状の凹部と、凹部内に設けられた弾性体である環状のシール部材と、を備え、シール部材の上端は、基板の載置前においてステージの上面から露出する一方、基板が基板載置領域に載置されるとともに第１負圧を受けた状態において基板の下面と密着しながら凹部に向けて後退して空間を気密することを特徴としている。 A first aspect of the present invention is a substrate processing apparatus, which comprises a stage having a substrate mounting area on the upper surface on which a rectangular substrate can be mounted, a nozzle having a slit-shaped discharge port for discharging a treatment liquid, and a nozzle. The first gas is discharged from the nozzle moving portion that moves the nozzle above the stage and the space sandwiched between the lower surface of the substrate mounted on the stage and the stage in the central portion of the substrate mounting area to discharge the first negative pressure. A first negative pressure generating portion that generates A sealing member is provided, and the upper end of the sealing member is exposed from the upper surface of the stage before mounting the substrate, while the substrate is mounted in the substrate mounting area and is subjected to the first negative pressure. It is characterized in that it retreats toward the recess while being in close contact with the lower surface to make the space airtight.

また、本発明の第２態様は、基板処理方法であって、ステージの上面の基板載置領域に矩形状の基板を載置した後で基板載置領域の中央部において基板の下面とステージとで挟まれた空間から第１気体を排出して第１負圧を発生させてステージ上で保持する保持工程と、基板を保持するステージの上方においてスリット状の吐出口を有するノズルを移動させながら吐出口から処理液を基板の上面に供給して塗布する塗布工程とを備え、保持工程は、基板の載置前に、弾性体で構成された環状のシール部材の上端をステージの上面から露出させたまま上方からの平面視で空間を取り囲むように基板載置領域の周縁部に設けられた環状の凹部内に位置させる工程と、基板の載置後に、第１負圧を受けた基板の下面とシール部材の上端とを密着させながらシール部材を凹部に向けて後退させて空間を気密する工程とを有することを特徴としている。 A second aspect of the present invention is a substrate processing method, in which a rectangular substrate is placed in a substrate mounting area on the upper surface of the stage, and then the lower surface of the substrate and the stage are formed in the central portion of the substrate mounting area. While the holding step of discharging the first gas from the space sandwiched between the two to generate a first negative pressure and holding it on the stage, and moving the nozzle having a slit-shaped discharge port above the stage holding the substrate. It includes a coating process in which the treatment liquid is supplied from the discharge port to the upper surface of the substrate and applied. In the holding process, the upper end of the annular sealing member made of an elastic body is exposed from the upper surface of the stage before mounting the substrate. The process of locating the substrate in an annular recess provided at the peripheral edge of the substrate mounting area so as to surround the space in a plan view from above, and the process of placing the substrate after receiving the first negative pressure. It is characterized by having a step of retracting the seal member toward the recess while keeping the lower surface and the upper end of the seal member in close contact with each other to make the space airtight.

以上のように本発明によれば、ステージの上面で矩形状の基板を高い吸着力で保持して処理液の塗布を安定して行うことができる。 As described above, according to the present invention, it is possible to stably apply the treatment liquid by holding the rectangular substrate on the upper surface of the stage with a high adsorption force.

本発明に係る基板処理装置の第１実施形態を示す斜視図である。It is a perspective view which shows the 1st Embodiment of the substrate processing apparatus which concerns on this invention. 第１実施形態におけるステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図である。It is a figure which shows typically the structure of the stage, the negative pressure generating part, the lift pin and the lift pin driving part in 1st Embodiment. 第１実施形態におけるステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図である。It is a figure which shows typically the structure of the stage, the negative pressure generating part, the lift pin and the lift pin driving part in 1st Embodiment. 本発明に係る基板処理装置の第２実施形態におけるステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図である。It is a figure which shows typically the structure of the stage, the negative pressure generating part, the lift pin and the lift pin driving part in the 2nd Embodiment of the substrate processing apparatus which concerns on this invention. 本発明に係る基板処理装置の第２実施形態におけるステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図である。It is a figure which shows typically the structure of the stage, the negative pressure generating part, the lift pin and the lift pin driving part in the 2nd Embodiment of the substrate processing apparatus which concerns on this invention. 本発明に係る基板処理装置の第３実施形態を示す図である。It is a figure which shows the 3rd Embodiment of the substrate processing apparatus which concerns on this invention. 本発明に係る基板処理装置の第４実施形態を示す図である。It is a figure which shows the 4th Embodiment of the substrate processing apparatus which concerns on this invention. 気体層形成部の構成を模式的に示す図である。It is a figure which shows typically the structure of the gas layer formation part.

図１は本発明に係る基板処理装置の第１実施形態を示す斜視図である。各図における方向を統一的に示すために、図１左上に示すようにＸＹＺ直交座標軸を設定する。ここでＸＹ平面が水平面、Ｚ軸が鉛直軸を表す。 FIG. 1 is a perspective view showing a first embodiment of the substrate processing apparatus according to the present invention. In order to show the directions in each figure in a unified manner, the XYZ orthogonal coordinate axes are set as shown in the upper left of FIG. Here, the XY plane represents the horizontal plane and the Z axis represents the vertical axis.

基板処理装置１００は、スリットノズル１を用いて基板Ｓの上面に処理液を塗布するスリットコータと呼ばれる装置である。処理液としては、レジスト液、カラーフィルター用液、ポリイミド、シリコン、ナノメタルインク、導電性材料を含むスラリー等、種々のものを用いることが可能である。この基板処理装置１００では、基台２の上にステージ３が配置されている。このステージ３の上面３１は基板Ｓを載置可能な基板載置領域（図２Ｂ中の符号３１１）を有している。また、ステージ３の上面３１に載置された基板Ｓを吸着保持するための負圧発生部（図２Ａ、図２Ｂ中の符号５）がステージ３に接続されている。なお、ステージ３および負圧発生部の構成および動作については後で詳述する。 The substrate processing device 100 is a device called a slit coater that applies a processing liquid to the upper surface of the substrate S using the slit nozzle 1. As the treatment liquid, various liquids such as a resist liquid, a liquid for a color filter, polyimide, silicon, nanometal ink, and a slurry containing a conductive material can be used. In the substrate processing apparatus 100, the stage 3 is arranged on the base 2. The upper surface 31 of the stage 3 has a substrate mounting region (reference numeral 311 in FIG. 2B) on which the substrate S can be mounted. Further, a negative pressure generating portion (reference numeral 5 in FIGS. 2A and 2B) for sucking and holding the substrate S placed on the upper surface 31 of the stage 3 is connected to the stage 3. The configuration and operation of the stage 3 and the negative pressure generating portion will be described in detail later.

ステージ３の上方には、スリットノズル１が配置されている。スリットノズル１はＹ方向に延びるスリット状の吐出口を有しており、ステージ３に保持された基板Ｓの上面に向けて吐出口から処理液を吐出可能となっている。基板処理装置１００では、スリットノズル１をステージ３の上方においてＸ方向に往復移動させるノズル移動部４が設けられている。ノズル移動部４は、ステージ３の上方をＹ方向に横断してスリットノズル１を支持するブリッジ構造のノズル支持体４１と、ノズル支持体４１をＸ方向に水平移動させるノズル駆動機構４２とを有する。 A slit nozzle 1 is arranged above the stage 3. The slit nozzle 1 has a slit-shaped discharge port extending in the Y direction, and the processing liquid can be discharged from the discharge port toward the upper surface of the substrate S held by the stage 3. The substrate processing apparatus 100 is provided with a nozzle moving portion 4 for reciprocating the slit nozzle 1 in the X direction above the stage 3. The nozzle moving portion 4 has a nozzle support 41 having a bridge structure that crosses the upper part of the stage 3 in the Y direction and supports the slit nozzle 1, and a nozzle driving mechanism 42 that horizontally moves the nozzle support 41 in the X direction. ..

ノズル支持体４１は、スリットノズル１が固定された固定部材４１ａと、固定部材４１ａを支持しつつ昇降させる２つの昇降機構４１ｂとを有している。固定部材４１ａは、Ｙ方向を長手方向とする断面矩形の棒状部材であり、カーボンファイバ補強樹脂等で構成される。２つの昇降機構４１ｂは固定部材４１ａの長手方向の両端部に連結されており、それぞれＡＣサーボモータおよびボールネジ等を有する。これらの昇降機構４１ｂにより、固定部材４１ａとスリットノズル１とが一体的に鉛直方向（Ｚ方向）に昇降され、スリットノズル１の吐出口と基板Ｓのとの間隔、すなわち、基板Ｓの上面に対する吐出口の相対的な高さが調整される。 The nozzle support 41 has a fixing member 41a to which the slit nozzle 1 is fixed, and two elevating mechanisms 41b that move the fixing member 41a up and down while supporting the fixing member 41a. The fixing member 41a is a rod-shaped member having a rectangular cross section with the Y direction as the longitudinal direction, and is made of a carbon fiber reinforcing resin or the like. The two elevating mechanisms 41b are connected to both ends of the fixing member 41a in the longitudinal direction, and each has an AC servomotor, a ball screw, and the like. By these elevating mechanisms 41b, the fixing member 41a and the slit nozzle 1 are integrally raised and lowered in the vertical direction (Z direction), and the distance between the discharge port of the slit nozzle 1 and the substrate S, that is, with respect to the upper surface of the substrate S. The relative height of the outlet is adjusted.

ノズル駆動機構４２は、スリットノズル１の移動をＸ方向に案内する２本のガイドレール４３と、駆動源である２個のリニアモータ４４と、スリットノズル１の吐出口の位置を検出するための２個のリニアエンコーダ４５とを備えている。２本のガイドレール４３は、基板載置領域３１１（図２Ｂ）をＹ方向から挟むように基台２のＹ方向の両端に配置されるとともに、基板載置領域３１１を含むようにＸ方向に延設されている。そして、２つの昇降機構４１ｂの下端部のそれぞれが２本のガイドレール４３に沿って案内されることで、スリットノズル１はステージ３上に保持される基板Ｓの上方をＸ方向へ移動する。 The nozzle drive mechanism 42 detects the positions of the two guide rails 43 that guide the movement of the slit nozzle 1 in the X direction, the two linear motors 44 that are the drive sources, and the discharge port of the slit nozzle 1. It includes two linear encoders 45. The two guide rails 43 are arranged at both ends of the base 2 in the Y direction so as to sandwich the board mounting area 311 (FIG. 2B) from the Y direction, and are arranged in the X direction so as to include the board mounting area 311. It has been extended. Then, each of the lower ends of the two elevating mechanisms 41b is guided along the two guide rails 43, so that the slit nozzle 1 moves above the substrate S held on the stage 3 in the X direction.

２個のリニアモータ４４のそれぞれは、固定子４４ａと移動子４４ｂとを有するＡＣコアレスリニアモータである。固定子４４ａは、基台２のＹ方向の両側面にＸ方向に沿って設けられている。一方、移動子４４ｂは、昇降機構４１ｂの外側に対して固設されている。リニアモータ４４は、これら固定子４４ａと移動子４４ｂとの間に生じる磁力によって、ノズル駆動機構４２の駆動源として機能する。 Each of the two linear motors 44 is an AC coreless linear motor having a stator 44a and a mover 44b. The stator 44a is provided on both side surfaces of the base 2 in the Y direction along the X direction. On the other hand, the mover 44b is fixed to the outside of the elevating mechanism 41b. The linear motor 44 functions as a drive source for the nozzle drive mechanism 42 by the magnetic force generated between the stator 44a and the mover 44b.

また、２個のリニアエンコーダ４５のそれぞれは、スケール部４５ａと検出部４５ｂとを有している。スケール部４５ａは基台２に固設されたリニアモータ４４の固定子４４ａの下部にＸ方向に沿って設けられている。一方、検出部４５ｂは、昇降機構４１ｂに固設されたリニアモータ４４の移動子４４ｂのさらに外側に固設され、スケール部４５ａに対向配置される。リニアエンコーダ４５は、スケール部４５ａと検出部４５ｂとの相対的な位置関係に基づいて、Ｘ方向におけるスリットノズル１の吐出口の位置を検出する。つまり、本実施形態では、昇降機構４１ｂによりスリットノズル１と基板Ｓとの間隔をＺ方向に調整しつつ、ノズル駆動機構４２によりスリットノズル１が基板Ｓに対してＸ方向に相対移動する。そして、こうした相対移動中に、スリットノズル１から処理液が吐出されることで基板Ｓの上面に処理液が供給される（処理液の塗布処理）。 Further, each of the two linear encoders 45 has a scale unit 45a and a detection unit 45b. The scale portion 45a is provided in the lower portion of the stator 44a of the linear motor 44 fixed to the base 2 along the X direction. On the other hand, the detection unit 45b is fixedly attached to the outer side of the mover 44b of the linear motor 44 fixed to the elevating mechanism 41b, and is arranged to face the scale portion 45a. The linear encoder 45 detects the position of the discharge port of the slit nozzle 1 in the X direction based on the relative positional relationship between the scale unit 45a and the detection unit 45b. That is, in the present embodiment, the slit nozzle 1 moves relative to the substrate S in the X direction by the nozzle drive mechanism 42 while adjusting the distance between the slit nozzle 1 and the substrate S in the Z direction by the elevating mechanism 41b. Then, during such relative movement, the treatment liquid is discharged from the slit nozzle 1 to supply the treatment liquid to the upper surface of the substrate S (coating treatment of the treatment liquid).

この塗布処理の前後でステージ３に対して基板Ｓを昇降させるために、リフトピンおよびリフトピン駆動部が設けられている。また、塗布処理中に基板Ｓを強固にステージ３の上面３１に吸着保持するために、本実施形態では、ステージ３および負圧発生部を次のように構成している。以下、図１、図２Ａおよび図２Ｂを参照しつつステージ３、負圧発生部、リフトピンおよびリフトピン駆動部の構成および動作について詳述する。 A lift pin and a lift pin drive unit are provided in order to raise and lower the substrate S with respect to the stage 3 before and after this coating process. Further, in order to firmly adsorb and hold the substrate S on the upper surface 31 of the stage 3 during the coating process, the stage 3 and the negative pressure generating portion are configured as follows in the present embodiment. Hereinafter, the configuration and operation of the stage 3, the negative pressure generating unit, the lift pin, and the lift pin driving unit will be described in detail with reference to FIGS. 1, 2A, and 2B.

図２Ａおよび図２Ｂはステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図であり、図２Ａは基板Ｓを吸着保持していない状態を示し、図２Ｂは基板Ｓを吸着保持している状態を示している。また、図２Ａおよび図２Ｂ（さらに後で説明する図３Ａ、図３Ｂ、図４および図５）において、「ＣＬＯＳＥ」および「ＯＰＥＮ」は開閉弁５３の開閉状況を示している。ここでは、リフトピンおよびリフトピン駆動部の構成を先に説明する。 2A and 2B are diagrams schematically showing the configurations of the stage, the negative pressure generating portion, the lift pin and the lift pin driving portion, FIG. 2A shows a state in which the substrate S is not adsorbed and held, and FIG. 2B shows the substrate S. It shows the state of suction and holding. Further, in FIGS. 2A and 2B (FIGS. 3A, 3B, 4 and 5 which will be described later), “CLOSE” and “OPEN” indicate the opening / closing status of the on-off valve 53. Here, the configurations of the lift pin and the lift pin drive unit will be described first.

ステージ３には、Ｚ方向に平行に延設されて上面３１に開口する複数のピン収納孔３１５が設けられており、各ピン収納孔３１５にリフトピン６１が収容されている。各リフトピン６１はＺ方向に平行に延設されたピン形状を有し、装置全体を制御する制御部１０がリフトピン駆動部６２に昇降指令を与えることでリフトピン６１を昇降させる。これによって、リフトピン６１がピン収納孔３１５に対して進退する。図示を省略するロボットがステージ３の上方に基板Ｓを搬送してくると、リフトピン駆動部６２の駆動により上昇した複数のリフトピン６１がピン収納孔３１５からステージ３の上面３１の上方へ突出してそれぞれの上端で基板Ｓを受け取る。続いて、リフトピン駆動部６２の駆動により複数のリフトピン６１が降下してピン収納孔３１５内に収まることで、複数のリフトピン６１の上端から基板載置領域３１１に基板Ｓが載置される。なお、基板載置領域３１１から基板Ｓを持ち上げる際には、リフトピン駆動部６２の駆動により複数のリフトピン６１が上昇してピン収納孔３１５からステージ３の上面３１の上方へ突出する。 The stage 3 is provided with a plurality of pin storage holes 315 extending in parallel in the Z direction and opening to the upper surface 31, and the lift pin 61 is housed in each pin storage hole 315. Each lift pin 61 has a pin shape extending parallel to the Z direction, and the control unit 10 that controls the entire device raises and lowers the lift pin 61 by giving a lift command to the lift pin drive unit 62. As a result, the lift pin 61 moves back and forth with respect to the pin storage hole 315. When a robot (not shown) conveys the substrate S above the stage 3, a plurality of lift pins 61 raised by the drive of the lift pin drive unit 62 project from the pin storage holes 315 to the upper side of the upper surface 31 of the stage 3, respectively. Receive the substrate S at the upper end of. Subsequently, the plurality of lift pins 61 are lowered by the drive of the lift pin drive unit 62 and are accommodated in the pin storage holes 315, so that the substrate S is mounted on the substrate mounting area 311 from the upper ends of the plurality of lift pins 61. When the substrate S is lifted from the substrate mounting area 311, the plurality of lift pins 61 are raised by the drive of the lift pin drive unit 62 and project from the pin storage holes 315 to the upper side of the upper surface 31 of the stage 3.

ステージ３の上面３１には、上記したように基板載置領域３１１が設けられているが、基板載置領域３１１をさらに詳しく見ると、基板載置領域３１１は、基板Ｓの有効エリアＳａに対応して格子状の吸着溝３１２が設けられた中央部と、吸着溝３１２を取り囲むように環状の凹部７が設けられた周縁部とを有している。 As described above, the substrate mounting area 311 is provided on the upper surface 31 of the stage 3, but when the substrate mounting area 311 is viewed in more detail, the substrate mounting area 311 corresponds to the effective area Sa of the substrate S. It has a central portion provided with a lattice-shaped suction groove 312 and a peripheral portion provided with an annular recess 7 so as to surround the suction groove 312.

ここで、基板Ｓの有効エリアＳａ（図２Ａ、図２Ｂ参照）とは、基板Ｓの上面中央部に複数の素子が設けられる領域を意味している。例えば半導体パッケージの場合、矩形状のガラス基板が基板Ｓに相当し、ガラス基板の上面中央部に積層して配置される複数の半導体チップやチップ間の配線などが複数の素子に相当する。基板Ｓが基板載置領域３１１に載置されると、図２Ｂに示すように、有効エリアＳａは基板載置領域３１１の中央部の上方に位置する。基板載置領域３１１の中央部では、基板Ｓの有効エリアＳａをステージ３の上面３１で強固に吸着保持するために、図１に示すように吸着溝３１２が格子状に刻設されている。すなわち、ステージ３の上面３１から一定深さで溝がＸ方向およびＹ方向に延設されるとともに、溝が交差している地点のいくつかで当該交差点からステージ３の下面３２に繋がる貫通孔３１３がＺ方向に穿設されている。 Here, the effective area Sa of the substrate S (see FIGS. 2A and 2B) means an area in which a plurality of elements are provided in the center of the upper surface of the substrate S. For example, in the case of a semiconductor package, a rectangular glass substrate corresponds to the substrate S, and a plurality of semiconductor chips stacked and arranged in the center of the upper surface of the glass substrate, wiring between the chips, and the like correspond to a plurality of elements. When the substrate S is mounted on the substrate mounting area 311, the effective area Sa is located above the central portion of the substrate mounting area 311 as shown in FIG. 2B. In the central portion of the substrate mounting region 311, suction grooves 312 are engraved in a grid pattern as shown in FIG. 1 in order to firmly attract and hold the effective area Sa of the substrate S on the upper surface 31 of the stage 3. That is, the groove extends in the X direction and the Y direction at a constant depth from the upper surface 31 of the stage 3, and the through hole 313 that connects the intersection to the lower surface 32 of the stage 3 at some points where the grooves intersect. Is bored in the Z direction.

各貫通孔３１３は、図２Ａおよび図２Ｂに示すように、負圧発生部５と接続されている。負圧発生部５は吸引配管５１、吸引源５２および開閉弁５３を有している。より詳しくは、吸引配管５１により吸引源５２が貫通孔３１３と接続されている。吸引源５２としては、例えば真空ポンプを用いてもよいし、基板処理装置１００が設置される工場の用力を用いてもよい。吸引配管５１には、開閉弁５３が介挿されている。制御部１０からの閉成指令に応じて開閉弁５３が閉成することで貫通孔３１３への負圧供給は停止される。一方、制御部１０からの開成指令に応じて開閉弁５３が開成することで貫通孔３１３に負圧が供給される。つまり、図２Ｂに示すように、基板Ｓが基板載置領域３１１に載置された後で制御部１０からの開成指令に応じて開閉弁５３が開くと、貫通孔３１３に負圧が供給される。それによって、基板Ｓの有効エリアＳａの下面とステージ３の上面３１とで挟まれた空間（以下「排気対象空間」という）から空気が吸着溝３１２および貫通孔３１３を介して排出され、基板Ｓがステージ３の上面３１に吸着保持される。 Each through hole 313 is connected to the negative pressure generating portion 5 as shown in FIGS. 2A and 2B. The negative pressure generating unit 5 has a suction pipe 51, a suction source 52, and an on-off valve 53. More specifically, the suction source 52 is connected to the through hole 313 by the suction pipe 51. As the suction source 52, for example, a vacuum pump may be used, or the power of the factory where the substrate processing device 100 is installed may be used. An on-off valve 53 is inserted in the suction pipe 51. When the on-off valve 53 is closed in response to the closing command from the control unit 10, the negative pressure supply to the through hole 313 is stopped. On the other hand, a negative pressure is supplied to the through hole 313 by opening the on-off valve 53 in response to the opening command from the control unit 10. That is, as shown in FIG. 2B, when the on-off valve 53 is opened in response to the opening command from the control unit 10 after the substrate S is mounted on the substrate mounting area 311, negative pressure is supplied to the through hole 313. NS. As a result, air is discharged from the space sandwiched between the lower surface of the effective area Sa of the substrate S and the upper surface 31 of the stage 3 (hereinafter referred to as “exhaust target space”) through the suction groove 312 and the through hole 313, and the substrate S is discharged. Is adsorbed and held on the upper surface 31 of the stage 3.

こうして基板Ｓの有効エリアＳａは負圧発生部５により吸着保持されるが、有効エリアＳａの外側領域、つまり非有効エリアＳｂは基板載置領域３１１の周縁部の上方に位置している。したがって、非有効エリアＳｂで反りが発生していると、反り部分から空気が排気対象空間（有効エリアＳａとステージ３との間）に流入して吸着力が低下してしまう。そこで、本実施形態では、基板載置領域３１１の周縁部において、格子状の吸着溝３１２を取り囲むように環状の凹部７が設けられるとともに、ゴムや樹脂などの弾性体で構成された環状の中空パッキン８Ａが本発明の「シール部材」として挿入されている。 In this way, the effective area Sa of the substrate S is attracted and held by the negative pressure generating portion 5, but the outer region of the effective area Sa, that is, the ineffective area Sb is located above the peripheral edge portion of the substrate mounting region 311. Therefore, if warpage occurs in the non-effective area Sb, air flows into the exhaust target space (between the effective area Sa and the stage 3) from the warped portion, and the adsorption force is reduced. Therefore, in the present embodiment, an annular recess 7 is provided at the peripheral edge of the substrate mounting region 311 so as to surround the lattice-shaped suction groove 312, and an annular hollow made of an elastic body such as rubber or resin is provided. The packing 8A is inserted as the "seal member" of the present invention.

中空パッキン８Ａの断面は円環形状または楕円環形状を有している。そして、基板Ｓが基板載置領域３１１上に載置されていない時には、図２Ａに示すように、中空パッキン８Ａの上端はステージ３の上面３１から上方に突出量ΔＺだけ突出して露出している。一方、基板Ｓが基板載置領域３１１上に載置されると、中空パッキン８Ａの上端は非有効エリアＳｂで基板Ｓの下面と密着した後で当該上端が弾性変形しながら凹部７に向かって後退する。このような密着しながらの弾性変形は基板Ｓの反りに対応しながら中空パッキン８Ａの全周にわたって発生する。このため、基板Ｓに対する中空パッキン８Ａの全周密着により排気対象空間の気密が保たれる。その結果、基板Ｓに反りが発生していたとしても、ステージ３に対して基板Ｓを強固に保持することができ、基板Ｓへの処理液の塗布を安定して行うことができる。 The cross section of the hollow packing 8A has an annular shape or an elliptical ring shape. When the substrate S is not mounted on the substrate mounting region 311 as shown in FIG. 2A, the upper end of the hollow packing 8A protrudes upward from the upper surface 31 of the stage 3 by the amount of protrusion ΔZ and is exposed. .. On the other hand, when the substrate S is placed on the substrate mounting area 311, the upper end of the hollow packing 8A is in close contact with the lower surface of the substrate S in the ineffective area Sb, and then the upper end is elastically deformed toward the recess 7. fall back. Such elastic deformation while being in close contact occurs over the entire circumference of the hollow packing 8A while corresponding to the warp of the substrate S. Therefore, the airtightness of the exhaust target space is maintained by the hollow packing 8A in close contact with the substrate S all around. As a result, even if the substrate S is warped, the substrate S can be firmly held against the stage 3, and the treatment liquid can be stably applied to the substrate S.

また、本実施形態では、図１に示すように、凹部７の角部を丸く仕上げる、いわゆるラウンドエッジに成形しているため、環状の中空パッキン８Ａを凹部７に挿入する際に中空パッキン８Ａが角部で傷つくのを効果的に防止することができる。 Further, in the present embodiment, as shown in FIG. 1, since the corners of the recess 7 are formed into a so-called round edge, the hollow packing 8A is formed when the annular hollow packing 8A is inserted into the recess 7. It is possible to effectively prevent damage at the corners.

上記したように第１実施形態では、負圧発生部５が本発明の「第１負圧発生部」の一例に相当し、排気対象空間に存在する空気が本発明の「第１気体」の一例に相当するとともに当該空気の排出により発生する負圧が本発明の「第１負圧」の一例に相当している。 As described above, in the first embodiment, the negative pressure generating section 5 corresponds to an example of the "first negative pressure generating section" of the present invention, and the air existing in the exhaust target space is the "first gas" of the present invention. The negative pressure generated by the discharge of the air corresponds to an example of the "first negative pressure" of the present invention.

図３Ａおよび図３Ｂは本発明に係る基板処理装置の第２実施形態におけるステージ、負圧発生部、リフトピンおよびリフトピン駆動部の構成を模式的に示す図であり、図３Ａは基板Ｓを吸着保持していない状態を示し、図３Ｂは基板Ｓを吸着保持している状態を示している。この第２実施形態が第１実施形態と大きく相違する点は、本発明のシール部材として断面が略Ｖ字状のシール、いわゆるＶシール８Ｂを用いている点と、凹部７の内部の空気を排出する凹部排気構造を採用している点とである。なお、その他の構成は第１実施形態と基本的に同一である。そこで、以下においては相違点を中心に説明し、同一構成に対して同一符号を付して構成説明を省略する。 3A and 3B are diagrams schematically showing the configurations of a stage, a negative pressure generating portion, a lift pin, and a lift pin driving portion in the second embodiment of the substrate processing apparatus according to the present invention, and FIG. 3A is a diagram showing suction and holding of the substrate S. FIG. 3B shows a state in which the substrate S is adsorbed and held. The major difference between this second embodiment and the first embodiment is that a seal having a substantially V-shaped cross section, a so-called V-seal 8B, is used as the seal member of the present invention, and the air inside the recess 7 is removed. The point is that a concave exhaust structure for discharging is adopted. The other configurations are basically the same as those of the first embodiment. Therefore, in the following description, the differences will be mainly described, the same reference numerals will be given to the same configurations, and the configuration description will be omitted.

第２実施形態では、図３Ａおよび図３Ｂに示すように、凹部７の底面からステージ３の下面に向けて貫通孔３１４が穿設されている。貫通孔３１４は吸引配管５１により吸引源５２と接続されている。したがって、制御部１０からの閉成指令に応じて開閉弁５３が閉成する間、貫通孔３１３、３１４への負圧供給は停止される。一方、制御部１０からの開成指令に応じて開閉弁５３が開成することで貫通孔３１３だけでなく、貫通孔３１４にも負圧が供給される。このため、図３Ｂに示すように、基板Ｓが基板載置領域３１１上に載置されると、Ｖシール８Ｂの上端は基板Ｓの下面のうち非有効エリアＳｂと密着した後で主として当該上端が弾性変形しながら凹部７の内部に向けて押し込まれる。その結果、第１実施形態と同様に、基板Ｓに対するＶシール８Ｂの全周密着により排気対象空間の気密が保たれる。その結果、基板Ｓに反りが発生していたとしても、ステージ３に対して基板Ｓを強固に保持することができ、基板Ｓへの処理液の塗布を安定して行うことができる。しかも、凹部７の内部から空気（本発明の「第２気体」に相当）を排出して負圧（本発明の「第２負圧」に相当）を発生させている。このため、基板Ｓの有効エリアＳａのみならず非有効エリアＳｂについてもステージ３の上面３１に吸着保持され、基板Ｓの吸着力をさらに高めることができる。また、Ｖシール８Ｂが弾性変形する際に、仮に基板Ｓやステージ３と擦れて発塵したとしても、凹部７から確実に排出して基板Ｓへの付着を確実に防止することができる。 In the second embodiment, as shown in FIGS. 3A and 3B, a through hole 314 is formed from the bottom surface of the recess 7 toward the bottom surface of the stage 3. The through hole 314 is connected to the suction source 52 by a suction pipe 51. Therefore, while the on-off valve 53 is closed in response to the closing command from the control unit 10, the negative pressure supply to the through holes 313 and 314 is stopped. On the other hand, when the on-off valve 53 is opened in response to the opening command from the control unit 10, negative pressure is supplied not only to the through hole 313 but also to the through hole 314. Therefore, as shown in FIG. 3B, when the substrate S is mounted on the substrate mounting area 311, the upper end of the V-seal 8B is mainly the upper end of the lower surface of the substrate S after being in close contact with the ineffective area Sb. Is elastically deformed and pushed toward the inside of the recess 7. As a result, as in the first embodiment, the airtightness of the exhaust target space is maintained by the V-seal 8B being in close contact with the substrate S all around. As a result, even if the substrate S is warped, the substrate S can be firmly held against the stage 3, and the treatment liquid can be stably applied to the substrate S. Moreover, air (corresponding to the "second gas" of the present invention) is discharged from the inside of the recess 7 to generate a negative pressure (corresponding to the "second negative pressure" of the present invention). Therefore, not only the effective area Sa of the substrate S but also the ineffective area Sb is attracted and held on the upper surface 31 of the stage 3, and the adsorption force of the substrate S can be further increased. Further, when the V-seal 8B is elastically deformed, even if it rubs against the substrate S or the stage 3 to generate dust, it can be reliably discharged from the recess 7 and can be reliably prevented from adhering to the substrate S.

このように第２実施形態では、負圧発生部５は本発明の「第２負圧発生部」としても機能しているが、負圧発生部５から独立して凹部７から第２空気を排出して第２負圧を発生させる負圧発生部を別途設けてもよく、これは本発明の「第２負圧発生部」として機能する。また、第２実施形態の凹部排気構造を第１実施形態や後で説明する第３実施形態や第４実施形態に適用してもよいことは言うまでもない。 As described above, in the second embodiment, the negative pressure generating portion 5 also functions as the “second negative pressure generating portion” of the present invention, but the second air is introduced from the recess 7 independently of the negative pressure generating portion 5. A negative pressure generating section for discharging and generating a second negative pressure may be separately provided, which functions as the "second negative pressure generating section" of the present invention. Needless to say, the recessed exhaust structure of the second embodiment may be applied to the first embodiment and the third embodiment and the fourth embodiment described later.

図４は本発明に係る基板処理装置の第３実施形態を示す図である。第３実施形態が第１実施形態と大きく相違する点は、例えば特開２０１７−１１２１９７号公報に記載された矯正機構と同一構成の矯正部９が追加されている点である。その他の構成は第１実施形態と基本的に同一である。そこで、以下においては相違点を中心に説明し、同一構成に対して同一符号を付して構成説明を省略する。 FIG. 4 is a diagram showing a third embodiment of the substrate processing apparatus according to the present invention. The major difference between the third embodiment and the first embodiment is that, for example, a correction unit 9 having the same configuration as the correction mechanism described in Japanese Patent Application Laid-Open No. 2017-112197 is added. Other configurations are basically the same as those of the first embodiment. Therefore, in the following description, the differences will be mainly described, the same reference numerals will be given to the same configurations, and the configuration description will be omitted.

矯正部９は、基板載置領域３１１に載置された基板Ｓの上面の周縁部、つまり非有効エリアＳｂに対して矯正ブロック９１を直接当接させることで非有効エリアＳｂに下方向きの押圧力を与えて基板Ｓの反りを矯正するものであり、その詳細については上記公報に記載されている。よって、本明細書では、基板処理装置１００で採用された矯正部９の基本構成および動作について図４を参照しつつ説明する。 The straightening portion 9 pushes the straightening block 91 downward to the ineffective area Sb by directly contacting the straightening block 91 with the peripheral edge of the upper surface of the substrate S mounted on the substrate mounting area 311, that is, the ineffective area Sb. A pressure is applied to correct the warp of the substrate S, and the details thereof are described in the above publication. Therefore, in this specification, the basic configuration and operation of the straightening unit 9 adopted in the substrate processing apparatus 100 will be described with reference to FIG.

矯正ブロック９１は基板載置領域３１１の各辺に１個ずつ配置されている。同図中の白抜き矢印で示すように、矯正ブロック９１は基板載置領域３１１の周縁部の上方で鉛直方向Ｚに昇降自在に設けられている。各矯正ブロック９１はブロック移動部９２と接続されている。このブロック移動部９２によって矯正ブロック９１が基板載置領域３１１に載置された基板Ｓの非有効エリアＳｂの上方に移動されると、矯正ブロック９１の下面が非有効エリアＳｂを上方から覆うように対向配置される。そして、ブロック移動部９２によって矯正ブロック９１がさらに降下されると、矯正ブロック９１の下面が基板Ｓの非有効エリアＳｂに接触し、さらに非有効エリアＳｂを基板載置領域３１１の周縁部に押し付ける。これにより基板Ｓの反りが矯正されて基板Ｓの非有効エリアＳｂはフラットな状態となる。しかも、この非有効エリアＳｂが凹部７に挿入された中空パッキン８Ａの上端を押え付け、中空パッキン８Ａをほぼ全周にわたって均一に弾性変形させて排気対象空間の気密性をさらに高める。その結果、ステージ３に対して基板Ｓをさらに強固に保持することができ、基板Ｓへの処理液の塗布をさらに安定して行うことができる。 One straightening block 91 is arranged on each side of the substrate mounting area 311. As shown by the white arrows in the figure, the straightening block 91 is provided so as to be able to move up and down in the vertical direction Z above the peripheral edge portion of the substrate mounting area 311. Each straightening block 91 is connected to a block moving portion 92. When the straightening block 91 is moved above the ineffective area Sb of the substrate S mounted on the substrate mounting area 311 by the block moving portion 92, the lower surface of the straightening block 91 covers the ineffective area Sb from above. It is arranged to face each other. Then, when the straightening block 91 is further lowered by the block moving portion 92, the lower surface of the straightening block 91 comes into contact with the ineffective area Sb of the substrate S, and further presses the ineffective area Sb against the peripheral edge of the substrate mounting area 311. .. As a result, the warp of the substrate S is corrected, and the ineffective area Sb of the substrate S becomes flat. Moreover, the ineffective area Sb presses the upper end of the hollow packing 8A inserted in the recess 7, and the hollow packing 8A is elastically deformed uniformly over almost the entire circumference to further enhance the airtightness of the exhaust target space. As a result, the substrate S can be held more firmly with respect to the stage 3, and the treatment liquid can be applied to the substrate S more stably.

ところで、上記第３実施形態では、矯正ブロック９１の下面を基板Ｓの非有効エリアＳｂに直接的に接触させて当該非有効エリアＳｂを基板載置領域３１１の周縁部に押し付けて矯正している。このため、基板Ｓのうち矯正ブロック９１と物理的に接触する部位にダメージが導入されてしまうことがある。また、上記接触により塵やパーティクルなどが発生することがある。そこで、次に説明するように、基板Ｓの非有効エリアＳｂと矯正ブロック９１の下面との間に気体層を形成し、気体層により非有効エリアＳｂを下方に押し付けて基板Ｓの反りを矯正するとともに排気対象空間の気密性を高めてもよい（第４実施形態）。 By the way, in the third embodiment, the lower surface of the straightening block 91 is brought into direct contact with the ineffective area Sb of the substrate S, and the ineffective area Sb is pressed against the peripheral edge of the substrate mounting area 311 for straightening. .. Therefore, damage may be introduced to a portion of the substrate S that is in physical contact with the straightening block 91. In addition, dust and particles may be generated by the above contact. Therefore, as will be described next, a gas layer is formed between the ineffective area Sb of the substrate S and the lower surface of the straightening block 91, and the ineffective area Sb is pressed downward by the gas layer to correct the warp of the substrate S. At the same time, the airtightness of the exhaust target space may be increased (fourth embodiment).

図５は本発明に係る基板処理装置の第４実施形態を示す図である。第４実施形態が第３実施形態と大きく相違する点は、矯正ブロック９１に連結されて矯正ブロック９１と基板Ｓとの間に気体層９３を強制的に形成する気体層形成部９４が追加されている点と、気体層９３を介して基板Ｓの非有効エリアＳｂを下方に押し付ける点とであり、その他の構成は基本的に第３実施形態と同一である。したがって、同一構成については同一符号を付して説明を省略する。 FIG. 5 is a diagram showing a fourth embodiment of the substrate processing apparatus according to the present invention. The major difference between the fourth embodiment and the third embodiment is the addition of a gas layer forming portion 94 which is connected to the straightening block 91 and forcibly forms a gas layer 93 between the straightening block 91 and the substrate S. The point is that the ineffective area Sb of the substrate S is pressed downward through the gas layer 93, and the other configurations are basically the same as those of the third embodiment. Therefore, the same components are designated by the same reference numerals and the description thereof will be omitted.

図６は気体層形成部の構成を模式的に示す図である。気体層形成部９４は、図６に示すように、コンプレッサなどの圧縮部９４１、温調部９４２、フィルタ９４３、ニードル弁９４４、流量計９４５、圧力計９４６およびエアオペレーションバルブ９４７を有している。気体層形成部９４では、圧縮部９４１により圧縮された空気を温調部９４２で所定の温度に調整して気体層形成用の圧縮空気を生成する。 FIG. 6 is a diagram schematically showing the configuration of the gas layer forming portion. As shown in FIG. 6, the gas layer forming unit 94 includes a compression unit 941 such as a compressor, a temperature control unit 942, a filter 943, a needle valve 944, a flow meter 945, a pressure meter 946, and an air operation valve 947. .. In the gas layer forming unit 94, the air compressed by the compression unit 941 is adjusted to a predetermined temperature by the temperature control unit 942 to generate compressed air for forming the gas layer.

この圧縮空気を流通させる配管には、フィルタ９４３、ニードル弁９４４、流量計９４５、圧力計９４６およびエアオペレーションバルブ９４７が設けられている。そして、制御部１０からの指令にしたがってエアオペレーションバルブ９４７が開成すると、フィルタ９４３を通って清浄化された圧縮空気がニードル弁９４４により圧力調節された後で流量計９４５、圧力計９４６、エアオペレーションバルブ９４７を通過して矯正ブロック９１に圧送される。圧縮空気は矯正ブロック９１の下面に設けられた噴出孔（図示省略）から本発明の「第３気体」として基板Ｓの非有効エリアＳｂに向けて噴出される。これによって、基板Ｓの非有効エリアＳｂと矯正ブロック９１との間に気体層９３（図５においてドットを付して模式的に示した領域）が形成される。 A filter 943, a needle valve 944, a flow meter 945, a pressure gauge 946, and an air operation valve 947 are provided in the pipe for circulating the compressed air. Then, when the air operation valve 947 is opened according to the command from the control unit 10, the compressed air purified through the filter 943 is pressure-adjusted by the needle valve 944, and then the flow meter 945, the pressure meter 946, and the air operation. It passes through valve 947 and is pumped to the correction block 91. Compressed air is ejected from an ejection hole (not shown) provided on the lower surface of the straightening block 91 toward the ineffective area Sb of the substrate S as the “third gas” of the present invention. As a result, a gas layer 93 (a region schematically shown with dots in FIG. 5) is formed between the ineffective area Sb of the substrate S and the straightening block 91.

そして、気体層９３を形成したまま、第３実施形態と同様に、ブロック移動部９２により矯正ブロック９１がさらに降下されると、非有効エリアＳｂは矯正ブロック９１と非接触状態のまま気体層９３によって基板載置領域３１１の周縁部に押し付けられて矯正されて基板Ｓの非有効エリアＳｂはフラットな状態となる。しかも、この非有効エリアＳｂが凹部７に挿入された中空パッキン８Ａの上端を押え付け、中空パッキン８Ａをほぼ全周にわたって均一に弾性変形させて排気対象空間の気密性をさらに高める。その結果、ステージ３に対して基板Ｓをさらに強固に保持することができ、基板Ｓへの処理液の塗布をさらに安定して行うことができる。 Then, as in the third embodiment, when the straightening block 91 is further lowered by the block moving portion 92 while the gas layer 93 is formed, the ineffective area Sb remains in non-contact with the straightening block 91 and the gas layer 93 remains in non-contact state. The ineffective area Sb of the substrate S is in a flat state by being pressed against the peripheral edge of the substrate mounting area 311 and corrected. Moreover, the ineffective area Sb presses the upper end of the hollow packing 8A inserted in the recess 7, and the hollow packing 8A is elastically deformed uniformly over almost the entire circumference to further enhance the airtightness of the exhaust target space. As a result, the substrate S can be held more firmly with respect to the stage 3, and the treatment liquid can be applied to the substrate S more stably.

以上のように、第３実施形態と同様に、非有効エリアＳｂを矯正しているため、中空パッキン８Ａをほぼ全周にわたって均一に弾性変形させて排気対象空間の気密性をさらに高めることができる。その結果、ステージ３に対して基板Ｓをさらに強固に保持することができ、基板Ｓへの処理液の塗布をさらに安定して行うことができる。 As described above, since the ineffective area Sb is corrected as in the third embodiment, the hollow packing 8A can be elastically deformed uniformly over almost the entire circumference to further improve the airtightness of the exhaust target space. .. As a result, the substrate S can be held more firmly with respect to the stage 3, and the treatment liquid can be applied to the substrate S more stably.

また、反りの矯正時に基板Ｓに接触するのは気体層９３となり、矯正ブロック９１を直接接触させて矯正する第３実施形態に比べて基板Ｓにダメージが導入されるのを防止するとともに発塵の問題を解消しながら基板Ｓを強固に吸着保持することができる。 Further, when the warp is straightened, it is the gas layer 93 that comes into contact with the substrate S, which prevents damage from being introduced into the substrate S and generates dust as compared with the third embodiment in which the straightening block 91 is directly contacted and straightened. The substrate S can be firmly adsorbed and held while solving the problem of.

なお、本発明は上記した実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば上記実施形態では、吸着溝３１２を格子状に設けて基板Ｓの有効エリアＳａの下面を吸着保持しているが、吸着溝３１２の配置は格子状に限定されず、任意である。また、吸着溝３１２を設ける代わりに、あるいは吸着溝３１２とともに複数の吸着孔を基板載置領域３１１の中央部に分散して設け、各吸着孔を介して排気対象空間の空気を排出して負圧を発生させてもよい。 The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above embodiment, the suction grooves 312 are provided in a grid pattern to suck and hold the lower surface of the effective area Sa of the substrate S, but the arrangement of the suction grooves 312 is not limited to the grid pattern and is arbitrary. Further, instead of providing the suction groove 312, or together with the suction groove 312, a plurality of suction holes are dispersedly provided in the central portion of the substrate mounting area 311, and the air in the exhaust target space is discharged through each suction hole to be negative. Pressure may be generated.

また、上記実施形態では、基板Ｓの一例として反り量が比較的大きな半導体パッケージを例示しているが、本発明の適用対象はこれに限定されるものではなく、矩形状の基板を吸着保持しながら基板の上面にスリットノズルから処理液を供給する基板処理装置全般に適用することができる。 Further, in the above embodiment, a semiconductor package having a relatively large amount of warpage is illustrated as an example of the substrate S, but the application target of the present invention is not limited to this, and a rectangular substrate is adsorbed and held. However, it can be applied to all substrate processing devices that supply a processing liquid from a slit nozzle to the upper surface of the substrate.

この発明は、ステージの上面で矩形状の基板を吸着保持しながら処理液を基板に塗布する基板処理技術全般に適用することができる。 The present invention can be applied to all substrate processing techniques for applying a processing liquid to a substrate while adsorbing and holding a rectangular substrate on the upper surface of the stage.

１…スリットノズル
３…ステージ
４…ノズル移動部
５…（第１、第２）負圧発生部
７…凹部
８Ａ…中空パッキン（シール部材）
８Ｂ…Ｖシール（シール部材）
３１…（ステージの）上面
３２…（ステージの）下面
９１…矯正ブロック
９２…ブロック移動部
９３…気体層
９４…気体層形成部
１００…基板処理装置
３１１…基板載置領域
３１２…吸着溝
Ｓ…基板
Ｓａ…有効エリア
Ｓｂ…非有効エリア 1 ... Slit nozzle 3 ... Stage 4 ... Nozzle moving part 5 ... (1st, 2nd) Negative pressure generating part 7 ... Recessed part 8A ... Hollow packing (seal member)
8B ... V seal (seal member)
31 ... Upper surface (of stage) 32 ... Lower surface (of stage) 91 ... Straightening block 92 ... Block moving part 93 ... Gas layer 94 ... Gas layer forming part 100 ... Substrate processing device 311 ... Substrate mounting area 312 ... Adsorption groove S ... Board Sa ... Effective area Sb ... Ineffective area

Claims (8)

矩形状の基板を載置可能な基板載置領域を上面に有するステージと、
処理液を吐出するスリット状の吐出口を有するノズルと、
前記ノズルを前記ステージの上方において移動させるノズル移動部と、
前記基板載置領域の中央部において前記ステージに載置された前記基板の下面と前記ステージとで挟まれた空間から第１気体を排出して第１負圧を発生させる第１負圧発生部と、
上方からの平面視で前記空間を取り囲むように前記基板載置領域の周縁部に設けられた環状の凹部と、
前記凹部内に設けられた弾性体である環状のシール部材と、を備え、
前記シール部材の上端は、前記基板の載置前において前記ステージの上面から露出する一方、前記基板が前記基板載置領域に載置されるとともに前記第１負圧を受けた状態において前記基板の下面と密着しながら前記凹部に向けて後退して前記空間を気密することを特徴とする基板処理装置。 A stage having a board mounting area on the upper surface on which a rectangular board can be mounted,
A nozzle with a slit-shaped discharge port that discharges the processing liquid,
A nozzle moving portion that moves the nozzle above the stage,
A first negative pressure generating portion that discharges a first gas from a space sandwiched between the lower surface of the substrate mounted on the stage and the stage in the central portion of the substrate mounting region to generate a first negative pressure. When,
An annular recess provided on the peripheral edge of the substrate mounting area so as to surround the space in a plan view from above,
An annular sealing member which is an elastic body provided in the recess is provided.
The upper end of the sealing member is exposed from the upper surface of the stage before the substrate is mounted, while the substrate is mounted on the substrate mounting region and is subjected to the first negative pressure. A substrate processing apparatus characterized in that the space is airtight by retreating toward the recess while being in close contact with the lower surface. 請求項１に記載の基板処理装置であって、
前記基板の有効エリアに複数の素子が形成される一方で、前記有効エリアを取り囲む非有効エリアには前記素子が形成されておらず、
前記第１負圧発生部は前記有効エリアに対して前記第１負圧を与え、
前記凹部は前記非有効エリアに対向して設けられる基板処理装置。 The substrate processing apparatus according to claim 1.
While a plurality of elements are formed in the effective area of the substrate, the elements are not formed in the non-effective area surrounding the effective area.
The first negative pressure generating portion applies the first negative pressure to the effective area, and the first negative pressure is applied to the effective area.
The recess is a substrate processing device provided so as to face the ineffective area. 請求項１または２に記載の基板処理装置であって、
前記シール部材の上端が前記基板の下面と密着した状態で前記凹部の内部から第２気体を排出して第２負圧を発生させる第２負圧発生部を備える基板処理装置。 The substrate processing apparatus according to claim 1 or 2.
A substrate processing apparatus including a second negative pressure generating portion that discharges a second gas from the inside of the recess in a state where the upper end of the sealing member is in close contact with the lower surface of the substrate to generate a second negative pressure. 請求項１ないし３のいずれか一項に記載の基板処理装置であって、
前記基板載置領域に載置された前記基板の上面の周縁部に対して下方向きの押圧力を与えて前記基板載置領域に載置された前記基板の反りを矯正する矯正部を備える基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 3.
A substrate provided with a straightening portion for correcting the warp of the substrate mounted on the substrate mounting region by applying a downward pressing force to the peripheral edge portion of the upper surface of the substrate mounted on the substrate mounting region. Processing equipment. 請求項４に記載の基板処理装置であって、
前記矯正部は、前記基板の周縁部の上方で上下方向に移動可能な矯正ブロックと、前記矯正ブロックを下方に移動させることで前記矯正ブロックの下面を前記基板の前記周縁部に押し付けて前記基板の反りを矯正するブロック移動部とを有する基板処理装置。 The substrate processing apparatus according to claim 4.
The straightening portion includes a straightening block that can be moved in the vertical direction above the peripheral edge of the substrate, and a straightening block that is moved downward to press the lower surface of the straightening block against the peripheral edge of the substrate. A substrate processing device having a block moving portion for correcting warpage. 請求項４に記載の基板処理装置であって、
前記矯正部は、前記基板の周縁部の上方で上下方向に移動可能な矯正ブロックと、前記矯正ブロックの下面から前記基板の上面に向けて第３気体を噴出して前記基板の上面と前記矯正ブロックの下面との間に気体層を形成する気体層形成部と、前記基板と非接触状態を保ちつつ前記矯正ブロックを下方に移動させることで前記気体層を前記基板の前記周縁部に押し付けて前記基板の反りを矯正するブロック移動部とを有する基板処理装置。 The substrate processing apparatus according to claim 4.
The straightening portion includes a straightening block that can move in the vertical direction above the peripheral edge of the substrate, and a third gas ejected from the lower surface of the straightening block toward the upper surface of the substrate to the upper surface of the substrate and the straightening portion. The gas layer forming portion that forms a gas layer between the lower surface of the block and the straightening block are moved downward while maintaining a non-contact state with the substrate, thereby pressing the gas layer against the peripheral portion of the substrate. A substrate processing apparatus having a block moving portion for correcting the warp of the substrate. 請求項５または６に記載の基板処理装置であって、
前記矯正ブロックの前記下面は前記基板の周縁部を挟んで前記シール部材の上端に対向するように配置され、
前記押圧力を受けた前記基板の周縁部の下面が前記シール部材の上端を下方に押し付けて前記空間の気密を高める基板処理装置。 The substrate processing apparatus according to claim 5 or 6.
The lower surface of the straightening block is arranged so as to face the upper end of the sealing member with the peripheral edge of the substrate interposed therebetween.
A substrate processing device in which the lower surface of the peripheral edge of the substrate that receives the pressing force presses the upper end of the sealing member downward to improve the airtightness of the space. ステージの上面の基板載置領域に矩形状の基板を載置した後で前記基板載置領域の中央部において前記基板の下面と前記ステージとで挟まれた空間から第１気体を排出して第１負圧を発生させて前記ステージ上で保持する保持工程と、
前記基板を保持する前記ステージの上方においてスリット状の吐出口を有するノズルを移動させながら前記吐出口から処理液を前記基板の上面に供給して塗布する塗布工程とを備え、
前記保持工程は、
前記基板の載置前に、弾性体で構成された環状のシール部材の上端を前記ステージの上面から露出させたまま上方からの平面視で前記空間を取り囲むように前記基板載置領域の周縁部に設けられた環状の凹部内に位置させる工程と、
前記基板の載置後に、前記第１負圧を受けた前記基板の下面と前記シール部材の上端とを密着させながら前記シール部材の上端を前記凹部に向けて後退させて前記空間を気密する工程と
を有することを特徴とする基板処理方法。 After the rectangular substrate is placed in the substrate mounting area on the upper surface of the stage, the first gas is discharged from the space sandwiched between the lower surface of the substrate and the stage in the central portion of the substrate mounting area. 1 A holding step of generating a negative pressure and holding it on the stage, and
A coating step is provided in which a treatment liquid is supplied to the upper surface of the substrate from the discharge port while moving a nozzle having a slit-shaped discharge port above the stage that holds the substrate.
The holding step is
Before mounting the substrate, the peripheral edge of the substrate mounting region so as to surround the space in a plan view from above while exposing the upper end of the annular sealing member made of an elastic body from the upper surface of the stage. And the process of positioning in the annular recess provided in
After the substrate is placed, the step of retracting the upper end of the sealing member toward the recess while keeping the lower surface of the substrate subjected to the first negative pressure and the upper end of the sealing member in close contact with each other to make the space airtight. A substrate processing method characterized by having and.
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