JP2021106467A - Inspection device and inspection method of solar cell - Google Patents

Abstract

To provide an inspection device and an inspection method of a solar cell that contribute to appropriate detection of a defect regarding a split groove of a rear electrode layer.SOLUTION: An inspection device comprises a measurement part F11. The measurement part measures a conduction state between a first type terminal pair TA contacting a first cell rear electrode layer adjacent to a first side part of a first split groove, a conduction state between a second type terminal pair TB contacting a second cell rear electrode layer adjacent to a second side part of the first split groove, and an insulation state between a third type terminal pair TC including one terminal T of the first type terminal pair and one terminal of the second type terminal pair.SELECTED DRAWING: Figure 11

Description

The present invention relates to an inspection device and an inspection method for a solar cell.

As an inspection device for a solar cell, for example, a device for photographing an object to be inspected by a line scan camera is known. Patent Document 1 describes an example of a conventional inspection device.

Japanese Patent No. 58854777

The back electrode layer of the solar cell is divided into a plurality of cell back electrode layers by a plurality of dividing grooves. A set of cell back electrode layers adjacent to each other via the dividing groove is insulated by the dividing groove. The back electrode layer may contain defects relating to the dividing groove. For example, in the step of forming the dividing groove, a part of the back electrode layer is not removed and remains in the dividing groove. A set of cell back electrode layers adjacent to each other via the dividing groove are connected by a part of the back electrode layer remaining in the dividing groove, and the insulation resistance of the set of cell back electrode layers is reduced. The inspection device of Patent Document 1 does not assume the detection of such a defect.

An object of the present invention is to provide a solar cell inspection apparatus and inspection method that contributes to appropriate detection of defects related to the dividing groove of the back electrode layer.

The solar cell inspection device according to the present invention is in a conductive state between a type 1 terminal pair in contact with the back electrode layer of the first cell adjacent to the first side portion of the dividing groove, and in the second side portion of the dividing groove. A third type including a conduction state between a second type terminal pair in contact with an adjacent second cell back electrode layer, and one terminal of the first type terminal pair and one terminal of the second type terminal pair. A measuring unit for measuring the insulation state between the terminal pairs is provided.

In the above inspection apparatus, the conduction state and the insulation state measured by the measuring unit can be used for detecting defects related to the dividing groove. This contributes to the proper detection of defects in the dividing groove.

In an example of the solar cell inspection device, an analysis unit for determining a defect in the dividing groove is further provided with reference to the conduction state and the insulation state measured by the measuring unit.

According to the above-mentioned inspection device, the defect of the dividing groove can be appropriately determined.

In an example of the solar cell inspection device, the analysis unit confirms that there is conduction between the first-class terminal pairs and the second-class terminal pairs, and between the third-class terminal pairs. If it is confirmed that the partition is not insulated, it is determined that the dividing groove has a defect.

According to the above inspection device, it is possible to appropriately detect the presence of a defect in the dividing groove.

In an example of the solar cell inspection device, the analysis unit confirms that there is conduction between the first-class terminal pairs and the second-class terminal pairs, and between the third-class terminal pairs. When it is confirmed that the insulation is provided, it is determined that there is no defect in the dividing groove.

According to the above inspection device, it is possible to appropriately detect that there is no defect in the dividing groove.

In an example of the solar cell inspection device, when it is confirmed that at least one of the first-class terminal pair and the second-class terminal pair is not conducting the analysis unit, the analysis unit of the dividing groove Withhold judgment on defects.

According to the above-mentioned inspection device, it is possible to suppress an error in determination regarding a defect in the dividing groove.

In an example of the solar cell inspection device, a removing unit for passing a current between the third-class terminal pairs is further provided.

According to the above inspection device, foreign matter remaining in the dividing groove may be removed with the flow of electric current.

In an example of the solar cell inspection device, the first type terminal pair, the second type terminal pair, and the third type terminal pair are further provided, and the first type terminal pair is the first cell back electrode layer. The type 2 terminal pair is configured to be in contact with each end of the second cell back electrode layer, and the type 3 terminal pair is configured to be in contact with each end of the second cell back electrode layer. The distance between each terminal of the third type terminal pair including one terminal of the pair and one terminal of the second type terminal pair with respect to the longitudinal direction of the dividing groove is the distance between the terminals of the third type terminal pair with respect to the longitudinal direction of the dividing groove. It is equal to the distance between each terminal of the type 1 terminal pair or the distance between each terminal of the type 2 terminal pair.

When the dividing groove contains a defect, the position of the defect in the longitudinal direction of the dividing groove differs depending on the processing conditions at the time of forming the dividing groove and the like. In the above inspection apparatus, the electric resistance of each cell back electrode layer is reflected in the measurement of the insulation resistance using the type 3 terminal pair. It is suppressed that the degree of influence of the electric resistance of each cell back electrode layer on the measurement of the insulation resistance varies depending on the position of the defect in the dividing groove.

The solar cell inspection apparatus and inspection method according to the present invention contribute to the appropriate detection of defects related to the dividing groove of the back electrode layer.

Sectional view of the solar cell. The figure (1) concerning the manufacturing process of a solar cell. The figure (2) about the manufacturing process of a solar cell. The figure regarding the manufacturing process of a solar cell (3). The figure (4) concerning the manufacturing process of a solar cell. The figure (5) concerning the manufacturing process of a solar cell. FIG. 6 shows a manufacturing process of a solar cell. The figure (7) concerning the manufacturing process of a solar cell. The figure (8) concerning the manufacturing process of a solar cell. The figure which shows an example of a groove defect. Block diagram of inspection equipment. Top view of the back electrode pair. External view of the inspection device. The figure which shows an example of the standby state. A flowchart showing an example of an inspection method.

FIG. 1 shows a cross section of the solar cell 10. According to the classification by the material of the light absorption layer, the solar cell 10 is, for example, a compound solar cell. According to the classification by thickness, the solar cell 10 is, for example, a thin film solar cell. A Cartesian coordinate system is used in the description of the solar cell 10. The plane defined by the X-axis and the Y-axis is referred to as a "reference plane". The plane of the solar cell 10 is parallel to the reference plane. The Z axis is orthogonal to the plane of the solar cell 10. The direction parallel to the X-axis is referred to as the "lateral direction". One of the lateral directions is referred to as a "first lateral direction". The other in the lateral direction is referred to as the "second lateral direction". The direction parallel to the Y axis is referred to as the "vertical direction". One of the vertical directions is referred to as a "first vertical direction". The other in the vertical direction is referred to as the "second vertical direction". The direction parallel to the Z axis is referred to as the "thickness direction". One of the thickness directions is referred to as a "first thickness direction". The other in the thickness direction is referred to as a "second thickness direction".

The solar cell 10 is, for example, a plate. In the plan view of the solar cell 10, the shape of the solar cell 10 is, for example, a quadrangle. The outer shell of the solar cell 10 in a plan view includes two sets of opposite sides. One opposite side is parallel in the horizontal direction. The other opposite side is parallel in the vertical direction. The solar cell 10 includes a first main surface 10A and a second main surface 10B. The first main surface 10A faces the first thickness direction. The second main surface 10B faces the second thickness direction. The main surfaces 10A and 10B are parallel to the reference surface.

The solar cell 10 includes a plurality of layers. In one example, the solar cell 10 includes a substrate 20, a back electrode layer 30, an intermediate layer 40, and a window layer 50. The substrate 20 includes a first main surface 20A and a second main surface 20B. The first main surface 20A faces the first thickness direction. The second main surface 20B faces the second thickness direction. The second main surface 20B constitutes the second main surface 10B of the solar cell 10. The back electrode layer 30 is laminated on the first main surface 20A of the substrate 20. The back electrode layer 30 includes a first main surface 30A and a second main surface 30B. The first main surface 30A faces the first thickness direction. The second main surface 30B faces the second thickness direction. The second main surface 30B faces the first main surface 20A of the substrate 20.

The intermediate layer 40 is laminated on the first main surface 30A of the back electrode layer 30. The intermediate layer 40 includes a first main surface 40A and a second main surface 40B. The first main surface 40A faces the first thickness direction. The second main surface 40B faces the second thickness direction. The second main surface 40B faces the first main surface 30A of the back electrode layer 30. The configuration of the intermediate layer 40 will be illustrated. In the first example, the intermediate layer 40 is composed of the light absorption layer 41. The light absorption layer 41 is laminated on the first main surface 30A of the back electrode layer 30. The light absorption layer 41 includes a first main surface 41A and a second main surface 41B. The first main surface 41A faces the first thickness direction. The second main surface 41B faces the second thickness direction. The first main surface 41A constitutes the first main surface 40A of the intermediate layer 40. The second main surface 41B faces the first main surface 30A of the back electrode layer 30. In the second example, the intermediate layer 40 is composed of a light absorption layer 41 and a buffer layer 42. The buffer layer 42 is laminated on the first main surface 41A of the light absorption layer 41. The buffer layer 42 includes a first main surface 42A and a second main surface 42B. The first main surface 42A faces the first thickness direction. The second main surface 42B faces the second thickness direction. The first main surface 42A constitutes the first main surface 40A of the intermediate layer 40. The second main surface 42B faces the first main surface 41A of the light absorption layer 41. In the third example, the intermediate layer 40 has a configuration in which another layer is laminated on the intermediate layer 40 of the second example.

The window layer 50 is laminated on the first main surface 40A of the intermediate layer 40. The window layer 50 includes a first main surface 50A and a second main surface 50B. The first main surface 50A faces the first thickness direction. The second main surface 50B faces the second thickness direction. The second main surface 50B faces the first main surface 40A of the intermediate layer 40.

In the classification regarding hardness, the substrate 20 is, for example, a rigid substrate, a flexible substrate, or a rigid flexible substrate. In the classification of electrical properties, the substrate 20 is, for example, an insulator or a semiconductor. In the classification regarding transparency, the substrate 20 is, for example, a transparent substrate. In one example, the substrate 20 is a glass substrate. The type of glass substrate is selected from, for example, aluminosilicate glass, soda lime glass, borosilicate glass, lead glass, alkaline barium glass, aluminoborosilicate glass, and non-alkali glass.

The back electrode layer 30 is, for example, a metal electrode layer. The material of the back electrode layer 30 is selected from, for example, molybdenum (Mo), titanium (Ti), and chromium (Cr). The light absorption layer 41 is, for example, a p-type semiconductor. The light absorption layer 41 is, for example, a compound semiconductor. The type of the compound semiconductor is selected from, for example, a CIS compound, a CIGS compound, a CZTS compound, a CdTe compound, and a CdS compound. The main components of the CIS compound are copper (Cu), indium (In), and selenium (Se). The main components of the CIGS compound are copper (Cu), indium (In), gallium (Ga), and selenium (Se). The main components of the CZTS compound are copper (Cu), zinc (Zn), tin (Sn), sulfur (S), and selenium (Se). The main components of the CdTe compound are cadmium (Cd) and tellurium (Te). The main components of the CdS compound are cadmium (Cd) and sulfur (S).

The buffer layer 42 is, for example, a high resistance layer. The buffer layer 42 is, for example, an n-type semiconductor. The material of the buffer layer 42 is selected from, for example, cadmium sulfide (CdS), zinc oxide (ZnO), zinc sulfide (ZnS), and indium sulfide (InS).

The window layer 50 is, for example, an n-type semiconductor. The window layer 50 is, for example, a transparent conductive film. The type of the transparent conductive film is selected from, for example, a tin oxide-based thin film, a zinc oxide-based thin film, and an indium oxide-based thin film.

The solar cell 10 includes a plurality of dividing grooves P and a plurality of cells 60. The plurality of dividing grooves P divide the back electrode layer 30, the intermediate layer 40, and the window layer 50 into a plurality of cells 60. The plurality of cells 60 are arranged in the horizontal direction. In one example, cell 60 is vertically long. The longitudinal direction of the cell 60 is parallel to the longitudinal direction. The plurality of dividing grooves P include three types of dividing grooves P. The types of the dividing groove P are the first dividing groove P1, the second dividing groove P2, and the third dividing groove P3. The solar cell 10 includes a plurality of first dividing grooves P1, a plurality of second dividing grooves P2, and a plurality of third dividing grooves P3. In one example, the dividing grooves P1 to P3 are long in the vertical direction. The dividing grooves P1 to P3 are parallel in the vertical direction.

The first dividing groove P1 is formed in the back electrode layer 30. A plurality of first dividing grooves P1 are formed in the back electrode layer 30. The plurality of first dividing grooves P1 are arranged in the horizontal direction. The second dividing groove P2 is formed in the intermediate layer 40. A plurality of second dividing grooves P2 are formed in the intermediate layer 40. The plurality of second dividing grooves P2 are arranged in the horizontal direction. The third dividing groove P3 is formed in the intermediate layer 40 and the window layer 50. A plurality of third dividing grooves P3 are formed in the intermediate layer 40 and the window layer 50. The plurality of third dividing grooves P3 are arranged in the horizontal direction. The intermediate layer 40 includes a first convex portion 40P that fills the first dividing groove P1. The window layer 50 includes a second convex portion 50P that fills the second dividing groove P2.

The cells 60 adjacent to each other in the lateral direction are classified by the first dividing groove P1 and the third dividing groove P3. Each cell 60 is electrically connected in series. The cell 60 is a back electrode layer 30 provided between a set of window layers 50 and an intermediate layer 40 provided between a set of third dividing grooves P3 arranged in the horizontal direction and a set of first dividing grooves P1 arranged in the horizontal direction. And include. The back electrode layer 30, the intermediate layer 40, and the window layer 50 constituting one cell 60 are referred to as "cell back electrode layer 61", "cell intermediate layer 62", and "cell window layer 63", respectively.

The back electrode layer 30 is divided into a plurality of cell back electrode layers 61 by a plurality of first dividing grooves P1. A set of cell back electrode layers 61 that are laterally adjacent to each other via the first dividing groove P1 is referred to as "back electrode pair E". One cell back electrode layer 61 and the other back electrode layer 61 included in the back electrode pair are insulated by the first dividing groove P1.

The cell back electrode layer 61 is connected to the cell window layer 63 of another cell 60 adjacent in the first lateral direction. The intermediate layer 40 and the window layer 50 are divided into a plurality of cell intermediate layers 62 and a cell window layer 63 by a plurality of third dividing grooves P3. The cell window layer 63 is connected to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction. The cell intermediate layer 62 is divided into a first layer constituent portion 62A and a second layer constituent portion 62B by the second dividing groove P2. The first layer component 62A is laminated on the cell back electrode layer 61. The second layer component 62B is laminated on the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.

The cell intermediate layer 62 includes a first convex portion 40P that fills the first dividing groove P1. The first convex portion 40P insulates one cell back electrode layer 61 and the other back electrode layer 61 included in the back electrode pair E. The cell window layer 63 includes a second convex portion 50P that fills the second dividing groove P2. The second convex portion 50P is connected to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.

Each dividing groove P1 to P3 is formed by, for example, scribe processing. The first dividing groove P1 is formed by, for example, a laser scribe. The second dividing groove P2 and the third dividing groove P3 are formed by, for example, mechanical scribe.

The solar cell 10 is manufactured as follows, for example. In the first step shown in FIG. 2, the substrate 20 is washed. In the second step shown in FIG. 3, the back electrode layer 30 is formed on the substrate 20. The method for forming the back electrode layer 30 is, for example, thin film deposition. In the third step shown in FIG. 4, the back electrode layer 30 is patterned, and a plurality of first dividing grooves P1 are formed in the back electrode layer 30. The method for forming the first dividing groove P1 is, for example, laser scribe. In the fourth step shown in FIG. 5, the light absorption layer 41 is formed on the back electrode layer 30. In one example, the fourth step includes each of the following steps. A precursor, which is a metal thin film, is formed on the back electrode layer 30. The method for forming the precursor is, for example, thin film deposition. The precursor is annealed in a particular gas atmosphere. The annealing treatment transforms the precursor into a compound. In one example, the annealing treatment results in seleniumization or sulfidation of the precursor. In the fifth step shown in FIG. 6, the buffer layer 42 is formed on the light absorption layer 41. The method for forming the buffer layer 42 is, for example, thin film deposition. In the sixth step shown in FIG. 7, the intermediate layer 40 is patterned, and a plurality of second dividing grooves P2 are formed in the intermediate layer 40. The method for forming the second dividing groove P2 is, for example, mechanical scribe. In the seventh step shown in FIG. 8, the window layer 50 is formed on the intermediate layer 40. The method for forming the window layer 50 is, for example, thin film deposition. In the eighth step shown in FIG. 9, the intermediate layer 40 and the window layer 50 are patterned, and a plurality of third dividing grooves P3 are formed in the intermediate layer 40 and the window layer 50. The method for forming the third dividing groove P3 is, for example, mechanical scribe.

The work-in-process of the solar cell 10 formed by the third step (see FIG. 4) is referred to as "work-in-process 10X". In the work-in-process 10X and the solar cell 10, the portion corresponding to the first dividing groove P1 in the thickness direction is referred to as a “specific portion Q”. The width of the specific portion Q in the lateral direction is equal to the width of the first dividing groove P1.

The back electrode layer 30 may include defects related to the dividing groove P (hereinafter referred to as “groove defects”). FIG. 10 shows an example of a groove defect. In the step of forming the first dividing groove P1, a part of the specific portion Q of the back electrode layer 30 may not be removed and may remain in the first dividing groove P1. A part of the specific portion Q remaining in the first dividing groove P1 is referred to as a "remaining portion R". One cell back electrode layer 61 included in the back electrode pair E and the other cell back electrode layer 61 may be connected by the remaining portion R. In the portion where the back electrode pair E is connected by the remaining portion R, the insulation resistance of the back electrode pair E decreases. The remaining portion R is generated by the influence of various processing conditions in the scribe processing process for forming the first dividing groove P1. The formation range and shape of the remaining portion R differ depending on the processing conditions.

FIG. 11 shows the back electrode pair E. The back electrode pair E includes a pair of cell back electrode layers 61. The cell back electrode layer 61 and the first dividing groove P1 are long in the vertical direction. The first dividing groove P1 includes a first side portion P11 and a second side portion P12. The side portions P11 and P12 are long in the longitudinal direction of the first dividing groove P1. A space of the first dividing groove P1 is formed between the first side portion P11 and the second side portion P12. One cell back electrode layer 61 included in the back electrode pair E is referred to as a "first cell back electrode layer E1". The other cell back electrode layer 61 included in the back electrode pair E is referred to as a "second cell back electrode layer E2". The first cell back electrode layer E1 is adjacent to the first side portion P11 of the first dividing groove P1 in the lateral direction. The second cell back electrode layer E2 is adjacent to the second side portion P12 of the first dividing groove P1 in the lateral direction.

The center of the cell back electrode layer 61 in the vertical direction is referred to as "electrode center SC". One end of the cell back electrode layer 61 in the vertical direction is referred to as a "first end S1". The other end of the cell back electrode layer 61 in the longitudinal direction is referred to as a "second end S2". The portion between the first end portion S1 and the electrode center SC in the vertical direction is referred to as a “first intermediate portion S3”. The portion between the second end portion S2 and the electrode center SC in the vertical direction is referred to as a “second intermediate portion S4”. One edge of the cell back electrode layer 61 in the vertical direction is referred to as "first edge S5". The other edge of the cell back electrode layer 61 in the longitudinal direction is referred to as "second edge S6". The first end portion S1 is a certain range including the first edge S5. The second end S2 is a certain range including the second edge S6.

FIG. 12 shows a block diagram of the inspection device 100. The inspection device 100 includes at least one of a function related to the measurement of the groove defect of the object W to be inspected and a function related to the removal of the residual portion R. The function related to the measurement of the groove defect is to measure the electrical characteristics of the object W to be inspected and refer to the result to detect the groove defect of the object W to be inspected. In the function related to the removal of the residual portion R, a current that contributes to evaporating the residual portion R is supplied to the back electrode pair E. The inspection device 100 includes a plurality of terminals T and a plurality of functional blocks F10. The plurality of terminals T include, for example, a first-class terminal to TA, a second-class terminal to TB, and a third-class terminal to TC. The plurality of functional blocks F10 include, for example, a measurement unit F11, an AD conversion unit F12, an analysis unit F13, a data conversion unit F14, and a removal unit F15.

The measuring unit F11 measures the conduction state between the type 1 terminal and TA, the conduction state between the type 2 terminal and TB, and the insulation state between the type 3 terminal and TC. In one example, the measuring unit F11 includes a first measuring unit F11A and a second measuring unit F11B. The first measuring unit F11A measures the conduction state between the first-class terminal and TA and the conduction state between the second-class terminal and TB. The second measuring unit F11B measures the insulation state between the third type terminal and the TC. The current flowing between the first-class terminals and TA, or the resistance between the first terminals and TA, reflects the conduction state between the first-class terminals and TA. In the measurement of the conduction state between the first terminal and TA, for example, the current or resistance between the first type terminal and TA is measured. The current flowing between the Type 2 terminals and TB, or the resistance between the Type 2 terminals and TB, reflects the conduction state between the Type 2 terminals and TB. In the measurement of the conduction state between the second terminal and TB, for example, the current or resistance between the second terminal and TB is measured. The resistance between the third terminal and the TC, or the current flowing between the third terminal and the TC, reflects the insulation state between the third terminal and the TC. In the measurement of the insulation state between the third terminal and the TC, for example, the resistance or the current between the third terminal and the TC is measured.

The AD conversion unit F12 converts the output signal of the measurement unit F11 into a digital signal. The analysis unit F13 refers to the output signal of the AD conversion unit F12, and determines the groove defect of the inspection target portion. The data conversion unit F14 converts the calculation result of the analysis unit F13 into data in a specific format. The removing unit F15 allows a current to flow between the Type 3 terminal and the TC.

The first-class terminal pair TA includes a pair of terminals T. One terminal T of the first type terminal to TA may be displayed as "terminal TA1". The other terminal T of the first-class terminal vs. TA may be displayed as "terminal TA2". The first-class terminal pair TA contacts the first cell back electrode layer E1. The second type terminal pair TB includes a pair of terminals T. One terminal T of the second type terminal vs. TB may be displayed as "terminal TB1". The other terminal T of the second type terminal vs. TB may be displayed as "terminal TB2". The second type terminal pair TB comes into contact with the second cell back electrode layer E2.

The third-class terminal vs. TC includes one terminal T of the first-class terminal vs. TA and one terminal T of the second-class terminal vs. TB. In the first example, the type 3 terminal vs. TC includes the type 1 terminal vs. TA terminal TA1 and the type 2 terminal vs. TB terminal TB1. In the second example, the type 3 terminal vs. TC includes the type 1 terminal vs. TA terminal TA1 and the type 2 terminal vs. TB terminal TB2. In the third example, the type 3 terminal vs. TC includes the type 1 terminal vs. TA terminal TA2 and the type 2 terminal vs. TB terminal TB1. In the fourth example, the type 3 terminal vs. TC includes the type 1 terminal vs. TA terminal TA2 and the type 2 terminal vs. TB terminal TB2.

The cell back electrode layer 61 is a first contacted portion in which one terminal T of the first type terminal to TA or one terminal T of the second type terminal to TB contacts, and the other terminal of the first type terminal to TA. Includes a second contacted portion with which one terminal T of T or Type 2 terminal vs. TB comes into contact. The first contacted portion and the second contacted portion are selected from, for example, the first end portion S1, the second end portion S2, the first intermediate portion S3, and the second intermediate portion S4 of the cell back electrode layer 61.

The distance between the first contacted portion and the second contacted portion in the vertical direction is referred to as a "measurement distance". The contents of the measurement distance will be illustrated. In the first example, the measurement distance is equal to or greater than the first predetermined distance. The first predetermined distance corresponds to, for example, the distance between the first end portion S1 and the second end portion S2 in the vertical direction. In the second example, the measurement distance is equal to or greater than the second predetermined distance. The second predetermined distance corresponds to the distance between the first end portion S1 or the second end portion S2 in the vertical direction and the electrode center SC. The longer the measurement distance, the smaller the influence of the position of the groove defect in the first dividing groove P1 on the measurement regarding the resistance between the third type terminal and the TC. This contributes to the improvement of resistance measurement accuracy.

The relationship between the first-class terminal pair TA and the first cell back electrode layer E1 will be illustrated. In the first example, the terminal TA1 contacts the first end S1. The terminal TA2 contacts the second end S2. In the second example, the terminal TA1 contacts the first end S1. The terminal TA2 contacts the second intermediate portion S4. In the third example, the terminal TA1 contacts the first end S1. The terminal TA2 contacts the electrode center SC. In the fourth example, the terminal TA1 contacts the first end S1. The terminal TA2 contacts the first intermediate portion S3. In the fifth example, the terminal TA1 contacts the first end S1. The terminal TA2 contacts a portion of the first end S1 that is different from the portion that the terminal TA1 contacts.

The relationship between the second type terminal pair TB and the second cell back electrode layer E2 will be illustrated. In the first example, the terminal TB1 contacts the first end S1. The terminal TB2 contacts the second end S2. In the second example, the terminal TB1 contacts the first end S1. The terminal TB2 contacts the second intermediate portion S4. In the third example, the terminal TB1 contacts the first end S1. The terminal TB2 contacts the electrode center SC. In the fourth example, the terminal TB1 contacts the first end S1. The terminal TB2 contacts the first intermediate portion S3. In the fifth example, the terminal TB1 contacts the first end S1. The terminal TB2 contacts a portion of the first end S1 that is different from the portion that the terminal TB1 contacts.

FIG. 13 shows an example of the hardware configuration of the inspection device 100. A Cartesian coordinate system is used in the description of the inspection device 100. The plane defined by the X-axis and the Y-axis is referred to as a "reference plane". The plane of the inspection device 100 is parallel to the reference plane. The Z axis is orthogonal to the plane of the inspection device 100. The direction parallel to the X-axis is referred to as the "width direction". The direction parallel to the Y axis is referred to as the "depth direction". The direction parallel to the Z axis is referred to as the "height direction". In one example, the lateral direction of the solar cell 10 is parallel to the width direction of the inspection device 100. The vertical direction of the solar cell 10 is parallel to the depth direction of the inspection device 100. The thickness direction of the solar cell 10 is parallel to the height direction of the inspection device 100.

The object W to be inspected is, for example, work in process 10X (see FIGS. 4 and 10). The object W to be inspected includes the first main surface WA and the second main surface WB. The first main surface WA of the object W to be inspected is the first main surface 30A of the back electrode layer 30. The second main surface WB of the object W to be inspected is the second main surface 20B of the substrate 20. The size of the object W to be inspected can be arbitrarily selected. In one example, the length of the object W to be inspected in the lateral direction is included in the range of 600 mm to 700 mm. The length of the object W to be inspected in the vertical direction is included in the range of 1500 mm to 1600 mm.

The inspection device 100 includes a probe unit 200, a measuring instrument 300, a power supply unit 400, a control unit 500, and a terminal device 600. Each terminal pair TA, TB, TC is included in the probe unit 200. The measuring unit F11 is composed of, for example, a probe unit 200, a measuring instrument 300, and a control unit 500. The AD conversion unit F12 is included in the measuring instrument 300 or the control unit 500. The analysis unit F13 and the data conversion unit F14 are included in the control unit 500. The specific format data converted by the data conversion unit F14 is, for example, data in a format used in the terminal device 600. The removal unit F15 is composed of, for example, a probe unit 200, a power supply unit 400, and a control unit 500.

In one example, the inspection device 100 further comprises a transfer unit 110 and a table 120. The transfer unit 110 relatively moves the probe unit 200 and the table 120. The table 120 supports the object W to be inspected. An example of a configuration relating to a movement target by the transfer unit 110 will be illustrated. In the first example, the transfer unit 110 moves the probe unit 200 with respect to the table 120. In the second example, the transfer unit 110 moves the table 120 with respect to the probe unit 200. In the third example, the transfer unit 110 moves both the probe unit 200 and the table 120. The transfer unit 110 includes at least one of a first actuator that moves the probe unit 200 and a second actuator that moves the table 120. The first actuator converts the electrical energy supplied from the power source into the motion of the probe unit 200. The second actuator converts the electrical energy supplied from the power source into the motion of the table 120.

The configuration relating to the relative movement of the transfer unit 110 will be illustrated. In the first example, the transfer unit 110 includes a first transfer structure that moves the probe unit 200 and the table 120 relative to each other in the height direction of the inspection device 100. In the second example, the transfer unit 110 includes a second transfer structure that relatively moves the probe unit 200 and the table 120 in the width direction. In the third example, the transfer unit 110 includes a third transfer structure that relatively moves the probe unit 200 and the table 120 in the depth direction. In the fourth example, the transfer unit 110 includes at least two transfer structures of the first to third examples. In the illustrated example, the transfer unit 110 includes a first transfer structure that moves the probe unit 200 relative to the table 120 in the height direction.

The probe unit 200 includes a plurality of terminals T. The terminal T is, for example, a terminal corresponding to the two-terminal method or a terminal corresponding to the four-terminal method. The plurality of terminals T include a plurality of type 1 terminal pairs TA, a plurality of type 2 terminal pairs TB, and a plurality of type 3 terminal pairs TC. In one example, the probe unit 200 includes a first probe unit 210 and a second probe unit 220. The transfer unit 110 moves the probe units 210 and 220 relative to the table 120 in the height direction.

The first probe unit 210 includes a first unit main body 211 and a plurality of terminals T. The plurality of terminals T included in the first probe unit 210 are a part of all the terminals T included in the probe unit 200. The first unit main body 211 is attached to the transfer unit 110. The first unit main body 211 includes a case 211A and a relay circuit 211B. The case 211A is defined in the longitudinal direction and the lateral direction. The longitudinal direction of the case 211A is parallel to the width direction of the inspection device 100. The lateral direction of the case 211A is parallel to the depth direction of the inspection device 100. The relay circuit 211B is provided in the case 211A. The plurality of terminals T are provided outside the case 211A. The plurality of terminals T are supported by the case 211A. The plurality of terminals T are arranged in the longitudinal direction of the case 211A. The plurality of terminals T are electrically connected to the relay circuit 211B.

The number of terminals T of the first probe unit 210 will be illustrated. In the first example, the number of terminals T of the first probe unit 210 is equal to the number of cell back electrode layers 61 provided on the object W to be inspected. In the second example, the number of terminals T of the first probe unit 210 is larger than the number of cell back electrode layers 61 provided on the object W to be inspected. In the third example, the number of terminals T of the first probe unit 210 is smaller than the number of cell back electrode layers 61 provided on the object W to be inspected.

The second probe unit 220 includes a second unit main body 221 and a plurality of terminals T. The plurality of terminals T included in the second probe unit 220 are a part of all the terminals T included in the probe unit 200. The second unit main body 221 is attached to the transfer unit 110. The second unit main body 221 includes a case 221A and a relay circuit 221B. The case 221A is defined in the longitudinal direction and the lateral direction. The longitudinal direction of the case 221A is parallel to the width direction of the inspection device 100. The lateral direction of the case 221A is parallel to the depth direction of the inspection device 100. The relay circuit 221B is provided in the case 221A. The plurality of terminals T are provided outside the case 221A. The plurality of terminals T are supported by the case 221A. The plurality of terminals T are arranged in the longitudinal direction of the case 221A. The plurality of terminals T are electrically connected to the relay circuit 221B.

The number of terminals T of the second probe unit 220 will be illustrated. In the first example, the number of terminals T of the second probe unit 220 is equal to the number of cell back electrode layers 61 provided on the object W to be inspected. In the second example, the number of terminals T of the second probe unit 220 is larger than the number of cell back electrode layers 61 provided on the object W to be inspected. In the third example, the number of terminals T of the second probe unit 220 is smaller than the number of cell back electrode layers 61 provided on the object W to be inspected.

In one example, the first probe unit 210 and the second probe unit 220 include the same number of terminals T. When the probe unit 200 is set in the inspected object W so that the electrical characteristics of the inspected object W can be measured (hereinafter referred to as “standby state”), each terminal T comes into contact with the inspected object W. FIG. 14 shows an example of the standby state. In the standby state, the terminals T of the probe units 210 and 220 form a vertical terminal pair TL arranged in the vertical direction. The vertical terminal pair TL includes one terminal T of the first probe unit 210 and one terminal T of the second probe unit 220. Each vertical terminal vs. TL corresponds to a first-class terminal-to-TA or a second-class terminal-to-TB. The probe unit 200 includes the same number of vertical terminal pairs TL as the total number of terminals T provided on the first probe unit 210 or the second probe unit 220.

For a set of vertically adjacent vertical terminal pairs TL, one vertical terminal pair TL corresponds to a type 1 terminal pair TA and the other vertical terminal pair TL corresponds to a type 2 terminal pair TB. In one example, each terminal pair TA to TC and the back electrode pair E include the following relationship. The terminal TA1 of the first type terminal vs. TA comes into contact with the first end portion S1 of the first cell back electrode layer E1. The terminal TA2 of the first type terminal vs. TA comes into contact with the second end portion S2 of the first cell back electrode layer E1. The terminal TB1 of the second type terminal vs. TB comes into contact with the first end portion S1 of the second cell back electrode layer E2. The terminal TB2 of the second type terminal vs. TB comes into contact with the second end portion S2 of the second cell back electrode layer E2. The third-class terminal-to-TC includes the first-class terminal-to-TA terminal TA1 and the second-class terminal-to-TB terminal TB2, or the first-class terminal-to-TA terminal TA2 and the second-class terminal-to-TB terminal TB1. including.

The distance between the terminal TA1 and the terminal TA2 of the first type terminal to TA with respect to the longitudinal direction of the first division groove P1 is equal to the distance between the terminal TB1 and the terminal TB2 of the second type terminal to TB. The distance between the type 3 terminal and TC with respect to the longitudinal direction of the first dividing groove P1 is the distance between the terminal TA1 and the terminal TA2 of the type 1 terminal with respect to the longitudinal direction of the first dividing groove P1 or the type 2 terminal pair. It is equal to the distance between the terminal TB1 of TB and the terminal TB2.

The measuring instrument 300 is electrically connected to the probe unit 200. The configuration of the measuring instrument 300 will be illustrated. In the first example, the measuring instrument 300 includes a multimeter. In the second example, the measuring instrument 300 includes an ammeter and a resistance measuring instrument that are individually configured. The measuring instrument 300 measures the conduction state between the vertical terminals and the TL and the insulation state between the third-class terminals and the TC. In the measurement of the conduction state, for example, a constant voltage is applied between the vertical terminals and the TL, and the current flowing between the vertical terminals and the TL is measured. The resistance between the vertical terminals and the TL is measured from the voltage and current between the vertical terminals and the TL. In the measurement of the insulated state, for example, a constant voltage is applied between the third-class terminals and the TC, and the current flowing between the third-class terminals and the TC is measured. The resistance between the Type 3 terminal and TC is measured from the voltage and current between the Type 3 terminal and TC. The measuring instrument 300 outputs continuity measurement information including information on the continuity state between the vertical terminals and the TL, and insulation measurement information including information on the insulation state between the third-class terminals and the TC.

The power supply unit 400 is electrically connected to the probe unit 200. The power supply unit 400 supplies a direct current to the probe unit 200. The power supply unit 400 outputs, for example, a direct current having a magnitude that contributes to the evaporation of the remaining portion R.

The control unit 500 is electrically connected to the probe unit 200, the measuring instrument 300, and the power supply unit 400. The control unit 500 includes a microcontroller 510. The microcontroller 510 includes an analysis unit F13. The microcontroller 510 outputs a control signal for switching the settings of the relay circuits 211B and 221B of the probe unit 200 to the probe unit 200.

The connection relationship between the measuring instrument 300 and the power supply unit 400 selected by setting the relay circuits 211B and 221B by the control unit 500 and each terminal T includes, for example, the following first to third connection states. In the first connection state, any one of the plurality of vertical terminals vs. TL is connected to the measuring instrument 300. The measuring instrument 300 measures the conduction state between the connected vertical terminals and the TL. In the second connection state, any one of the plurality of third-class terminals vs. TC is connected to the measuring instrument 300. The measuring instrument 300 measures the insulation state between the connected third-class terminals and the TC. In the third connection state, any one of the plurality of third-class terminals vs. TC is connected to the power supply unit 400. The DC voltage of the power supply unit 400 is applied between the Type 3 terminal connected to the power supply unit 400 and the TC. When there is a groove defect in the back electrode pair E corresponding to the type 3 terminal pair TC connected to the power supply unit 400, a direct current flows between the class 3 terminal pair TC.

The control unit 500 receives the continuity measurement information and the insulation measurement information from the measuring instrument 300. The analysis unit F13 of the microcontroller 510 determines the groove defect of the inspected object W with reference to the continuity measurement information and the insulation measurement information. The determination process relating to the groove defect includes, for example, a continuity determination process, an insulation determination process, and a defect determination process.

The contents of the continuity determination process will be illustrated. The conduction state between the vertical terminal and the TL is determined based on the continuity measurement information. This includes determination of the continuity state between the first-class terminals and TA based on the continuity measurement information, and determination of the continuity state between the second-class terminals and TB. In one example, the conduction state is determined for all the vertical terminals vs. TL. When the current between the vertical terminals and the TL is equal to or greater than the first reference current, or when the resistance between the vertical terminals and the TL is less than the first reference resistance, it is said that the vertical terminals and the TL are conducting. It is judged. If the current between the vertical terminals and TL is less than the first reference current, or if the resistance between the vertical terminals and TL is greater than or equal to the first reference resistance, then there is no conduction between the vertical terminals and TL. It is judged. Information including the determination result regarding the continuity state between the vertical terminal and the TL is referred to as "continuity determination information".

The storage unit of the microcontroller 510 stores the identification information of the vertical terminal pair TL and the continuity determination information in association with each other. Unique identification information is set for each vertical terminal pair TL. When the continuity state is determined, the continuity determination information corresponding to the vertical terminal to TL to be determined is updated.

The contents of the insulation determination process will be illustrated. The insulation state between the Type 3 terminal and TC is determined based on the insulation measurement information. In one example, the insulation state is determined for all Type 3 terminal vs. TC. If the resistance between the Type 3 terminal and TC is greater than or equal to the second reference resistance, or if the current between the Type 3 terminal and TC is less than the second reference current, then between the Type 3 terminal and TC. Is determined to be insulated. If the resistance between the Type 3 terminal and TC is less than the 2nd reference resistance, or if the current between the Type 3 terminal and TC is greater than or equal to the 2nd reference current, then between the Type 3 terminal and TC. Is determined not to be insulated. Information including the determination result regarding the insulation state between the type 3 terminal and the TC is referred to as "insulation determination information".

The storage unit of the microcontroller 510 stores the identification information of the third type terminal pair TC and the insulation determination information in association with each other. Unique identification information is set for each type 3 terminal pair TC. When the insulation state is determined, the insulation determination information corresponding to the third type terminal to TC to be determined is updated.

The contents of the defect determination process will be illustrated. The state related to the groove defect of the first dividing groove P1 is determined based on the continuity determination information and the insulation determination information. In one example, the state related to the groove defect is determined for all the first dividing grooves P1. In the defect determination process, the insulation determination information of the third type terminal to TC to be determined, the continuity determination information of the first type terminal to TA corresponding to the third type terminal to TC, and the continuity determination of the second type terminal to TB Information is referenced. When the type 1 terminal to TA is conductive, the type 2 terminal to TB is conducting, and the type 3 terminal to TC is not insulated, it corresponds to the type 3 terminal to TC to be judged. It is determined that a groove defect exists in the first dividing groove P1. When the type 1 terminal to TA is conductive, the type 2 terminal to TB is conducting, and the type 3 terminal to TC is insulated, it corresponds to the type 3 terminal to TC to be judged. It is determined that there is no groove defect in the first dividing groove P1. When at least one of the type 1 terminal to TA and the type 2 terminal to TB is not conducting, the determination regarding the groove defect of the first dividing groove P1 corresponding to the type 3 terminal to TC to be determined is made. It is put on hold. Information including the determination result regarding the groove defect is referred to as "defect determination information".

The storage unit of the microcontroller 510 stores the identification information of the first dividing groove P1 and the defect determination information in association with each other. Unique identification information is set for each first dividing groove P1. When the state related to the groove defect is determined, the defect determination information of the first dividing groove P1 to be determined is updated. Even when the determination regarding the groove defect is suspended, the defect determination information of the first dividing groove P1 to be determined is updated. The defect determination information in this case includes information indicating that the determination regarding the groove defect has been suspended.

The contents of the judgment process regarding groove defects will be summarized.
From the continuity measurement information, the analysis unit F13 confirms that there is continuity between the first-class terminal to TA and the second-class terminal to TB, and from the insulation measurement information, the third-class terminal to TC is insulated. If it is confirmed that the first dividing groove P1 does not have a groove defect, it is determined that there is a groove defect.

From the continuity measurement information, the analysis unit F13 confirms that there is continuity between the first-class terminal to TA and the second-class terminal to TB, and from the insulation measurement information, the third-class terminal to TC is insulated. If it is confirmed that the first dividing groove P1, it is determined that there is no groove defect.

When it is confirmed from the continuity measurement information that at least one of the first-class terminal to TA and the second-class terminal to TB is not conducting, the analysis unit F13 determines the groove defect of the first dividing groove P1. On hold.

The terminal device 600 is connected to the control unit 500 via a communication device so that it can perform wired communication or wireless communication with the control unit 500. The control unit 500 outputs inspection information including at least one of continuity measurement information, insulation measurement information, continuity determination information, insulation determination information, and defect determination information to the terminal device 600. The terminal device 600 displays, for example, information based on inspection information on a display.

FIG. 15 shows an example of an inspection method for the object W to be inspected.
In the first step, the probe unit 200 is set in the standby state. In one example, the first step is performed as follows. The transfer unit 110 moves the probe unit 200 relative to the inspected object W so that the terminals T of the probe units 210 and 220 come into contact with the inspected object W. Each terminal T of the first probe unit 210 contacts the first end S1 of each cell back electrode layer 61. Each terminal T of the second probe unit 220 comes into contact with the second end S2 of each cell back electrode layer 61. In the state where the first step is completed, one terminal T comes into contact with the first end portion S1 and one terminal T comes into contact with the second end portion S2 for each of all the cell back electrode layers 61.

In the second step, the control unit 500 executes the continuity determination process. In one example, the second step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the first connection state so that the measurement current flows between the vertical terminals to be measured and the TL. When the terminal T of the first probe unit 210 and the terminal T of the second probe unit 220 included in the vertical terminal to TL to be measured are electrically connected to the cell back electrode layer 61, between the vertical terminal to TL to be measured. Confirmation current flows through. The control unit 500 sequentially switches between the vertical terminals to be measured and the TL. The measuring instrument 300 outputs the continuity measurement information to the control unit 500. The control unit 500 determines the continuity state between the vertical terminals and the TL based on the continuity measurement information. In the state where the second step is completed, continuity determination information is obtained for all the vertical terminals vs. TL.

When there is a non-conducting vertical terminal pair TL (hereinafter referred to as "non-conducting vertical terminal pair TL"), the non-conducting vertical terminal pair TL is detected by the continuity determination process. In the non-conducting vertical terminal pair TL, at least one terminal T is not electrically connected to the cell back electrode layer 61. The reason why the terminal T is not electrically connected to the cell back electrode layer 61 includes, for example, at least one of the following first to third causes. In the first cause, at least one terminal T of the vertical terminal to the TL is located at a position away from the cell back electrode layer 61, and the terminal T is not in contact with the cell back electrode layer 61. In the second cause, foreign matter is present on the surface of at least one terminal T of the vertical terminal to the TL, and the terminal T is not in contact with the cell back electrode layer 61. The foreign matter existing on the surface of the terminal T includes, for example, an oxide film formed on the surface of the terminal T, dirt adhering to the terminal T, and the like. In the third cause, at least one terminal T of the first type terminal to the TA is burnt out.

In the third step, the control unit 500 executes the insulation determination process. In one example, the third step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the second connection state so that the measurement current flows between the third type terminal to the TC to be measured. When the type 3 terminal to the TC to be measured is insulated, the measurement current does not flow between the type 3 terminal to the TC. The control unit 500 sequentially switches the type 3 terminal to TC to be measured. The measuring instrument 300 outputs the insulation measurement information to the control unit 500. The control unit 500 determines the insulation state between the type 3 terminal and the TC based on the insulation measurement information. In the state where the third step is completed, insulation determination information can be obtained for all the third-class terminal pairs TC.

In the fourth step, the control unit 500 executes the defect determination process. In one example, the fourth step is performed as follows. The control unit 500 determines the groove defect of the first dividing groove P1 to be determined based on the continuity determination information and the insulation determination information. In the state where the fourth step is completed, defect determination information can be obtained for all the first dividing grooves P1.

In the fifth step, the control unit 500 executes the energization process. In one example, the fifth step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the third connection state so that the removal current flows between the third type terminal to the TC to be energized. The removal current is a high current suitable for removing the remaining portion R. The removal current is higher than the measurement current. When the remaining portion R exists in the first dividing groove P1 corresponding to the third type terminal to TC to be energized, a removal current flows between the third type terminal to TC. The remaining portion R may evaporate as the removal current flows. When the residual portion R connecting the cell back electrode layers 61 adjacent in the lateral direction evaporates, the adjacent cell back electrode layer 61 is insulated by the first dividing groove P1. The control unit 500 sequentially switches the type 3 terminal to TC to be energized.

The back electrode pair E including the groove defect is referred to as a “defect electrode pair”. The back electrode pair E that does not include the groove defect is referred to as a “normal electrode pair”. The insulation resistance of the defective electrode pair is lower than the insulation resistance of the normal electrode pair. When the residual portion R of the defective electrode pair is removed by the energization treatment, the insulation resistance of the electrode pair becomes high. In one example, the insulation resistance of the back electrode pair E that has transitioned from the defective electrode pair to the normal electrode pair is substantially equal to the insulation resistance of the normal electrode pair that has existed from the beginning.

In the sixth step, the control unit 500 executes the insulation determination process again. In one example, the sixth step is performed as follows. The control unit 500 sets the state of the relay circuits 211B and 221B of the probe unit 200 to the second connection state so that the measurement current flows between the third type terminal to the TC to be measured. The control unit 500 sequentially switches the type 3 terminal to TC to be measured. The measuring instrument 300 outputs the insulation measurement information to the control unit 500. The control unit 500 determines the insulation state between the type 3 terminal and the TC based on the insulation measurement information. In the state where the sixth step is completed, insulation determination information can be obtained for all the third-class terminal pairs to TC.

In the seventh step, the control unit 500 executes the defect determination process again. In one example, the seventh step is performed as follows. The control unit 500 determines the groove defect of the first dividing groove P1 to be determined based on the continuity determination information and the insulation determination information. In the state where the seventh step is completed, defect determination information can be obtained for all the first dividing grooves P1.

The inspection method of the object W to be inspected may have different contents from the inspection method of FIG. The inspection method of the first example does not include the fifth to seventh steps. The inspection method of the second example does not include the sixth and seventh steps. In the inspection method of the third example, the energization process is executed after the execution of the second step, separately from the fifth step. In the inspection method of the fourth example, apart from the fifth step, the energization process is executed after the execution of the third step. In the inspection method of the fifth example, the energization process is executed after the execution of the sixth step, separately from the fifth step. In the inspection method of the sixth example, apart from the fifth step, the energization process is executed after the execution of the seventh step. The inspection method of the seventh example includes at least two of the contents of the third to sixth examples. In the inspection method of the eighth example, the fifth step is omitted in any of the inspection methods of the third to seventh examples.

The inspection method of the ninth example further includes the eighth step and the ninth step. The eighth step is executed between the second step and the third step. In the continuity determination process of the second step, the non-conducting vertical terminal pair TL is detected. When there is a non-conducting vertical terminal pair TL, it may not be possible to accurately detect that the adjacent cell back electrode layer 61 is insulated by the first dividing groove P1 in the insulation determination process. When there is a non-conducting vertical terminal pair TL, the remaining portion R may not be removed in the energization process. The continuity determination information can be used as information for confirming whether or not the insulation determination process and the energization process are properly executed.

In the eighth step, the control unit 500 refers to the continuity determination information and determines whether or not the number of non-conducting vertical terminals to TL is equal to or greater than a predetermined number. The predetermined number is an integer of 1 or more. If the number of non-conducting vertical terminals vs. TL is less than a predetermined number, the third step is executed. When the number of non-conducting vertical terminals to TL is equal to or greater than a predetermined number, the ninth step is executed. In the ninth step, the control unit 500 causes a predetermined display device to output guidance information. The guidance information is, for example, at least one of information indicating that a non-conducting vertical terminal pair TL is included, information indicating the resetting of the probe unit 200, and information indicating the execution of an inspection regarding the state of the probe unit 200. including. The display device includes, for example, a terminal device 600.

It should be noted that the description of the above embodiment is not intended to limit the solar cell inspection device and the forms that the inspection device can take according to the present invention. The solar cell inspection device and the inspection device according to the present invention may take a form different from the form exemplified in the embodiment. One example thereof is a form in which a part of the configuration of the embodiment is replaced, changed, or omitted, or a new configuration is added to the embodiment.

10: Solar cell 100: Inspection device F11: Measurement unit F13: Analysis unit F15: Removal unit TA: Type 1 terminal pair TB: Type 2 terminal pair TC: Type 3 terminal pair P: Dividing groove P11: First side Part P12: 2nd side part E1: 1st cell back electrode layer E2: 2nd cell back electrode layer S1: 1st end part S2: 2nd end part

Claims (10)

In the conduction state between the first-class terminal pairs in contact with the first cell back electrode layer adjacent to the first side portion of the dividing groove, and to the second cell back electrode layer adjacent to the second side portion of the dividing groove. The conduction state between the second-class terminal pairs that come into contact with each other and the insulation state between the third-class terminal pair including one terminal of the first-class terminal pair and one terminal of the second-class terminal pair. A solar cell inspection device equipped with a measuring unit for measurement. The solar cell inspection apparatus according to claim 1, further comprising an analysis unit for determining a defect in the dividing groove with reference to a conduction state and an insulation state measured by the measuring unit. When it is confirmed that the analysis unit is conducting between the first-class terminal pairs and the second-class terminal pairs, and it is confirmed that the third-class terminal pairs are not insulated from each other. The solar cell inspection device according to claim 2, wherein it is determined that a defect is present in the dividing groove. When it is confirmed that the analysis unit is conducting between the first-class terminal pairs and the second-class terminal pairs, and that the third-class terminal pairs are insulated from each other. The solar cell inspection device according to claim 2 or 3, wherein it is determined that there is no defect in the dividing groove. Claims 2 to 2 for which the analysis unit suspends the determination regarding the defect of the dividing groove when it is confirmed that at least one of the first-class terminal pair and the second-class terminal pair is not conducting. The solar cell inspection device according to any one of 4. The solar cell inspection apparatus according to any one of claims 1 to 5, further comprising a removing portion for passing an electric current between the third-class terminal pairs. The type 1 terminal pair, the type 2 terminal pair, and the type 3 terminal pair are further provided.
The first-class terminal pair is configured to be in contact with each end of the first cell back electrode layer.
The type 2 terminal pair is configured to be in contact with each end of the second cell back electrode layer.
The type 3 terminal pair includes one terminal of the type 1 terminal pair and one terminal of the type 2 terminal pair.
The distance between each terminal of the type 3 terminal pair in the longitudinal direction of the dividing groove is the distance between each terminal of the type 1 terminal pair or between each terminal of the type 2 terminal pair in the longitudinal direction of the dividing groove. The solar cell inspection device according to any one of claims 1 to 6, which is equal to the distance of. This is an inspection method for detecting defects in the dividing groove that divides the back electrode layer into a plurality of cell back electrode layers.
The conduction state between the first-class terminal pairs in contact with the first cell back electrode layer adjacent to the first side portion of the dividing groove, and the second cell back electrode layer adjacent to the second side portion of the dividing groove. Continuity determination processing step to measure the continuity state of the type 2 terminal pair in contact with
A solar cell including a first insulation determination processing step of measuring an insulation state between a third-class terminal pair including one terminal of the first-class terminal pair and one terminal of the second-class terminal pair. Inspection methods. The method for inspecting a solar cell according to claim 8, further comprising an energization processing step of passing a current between the third-class terminal pairs after the execution of the first insulation determination processing step. The method for inspecting a solar cell according to claim 9, further comprising a second insulation determination processing step of measuring the insulation state between the third type terminal pairs after the execution of the energization processing step.

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