CN113053778A - Solar cell inspection device and inspection method - Google Patents

Solar cell inspection device and inspection method Download PDF

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Publication number
CN113053778A
CN113053778A CN202011358540.9A CN202011358540A CN113053778A CN 113053778 A CN113053778 A CN 113053778A CN 202011358540 A CN202011358540 A CN 202011358540A CN 113053778 A CN113053778 A CN 113053778A
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terminal pair
terminal
pair
back electrode
type
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高桥昌见
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Mitsuboshi Diamond Industrial Co Ltd
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Mitsuboshi Diamond Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The technical problem is as follows: provided are an inspection device and an inspection method for a solar cell, which are useful for appropriately detecting defects related to a dividing groove of a back electrode layer. The solution is as follows: the inspection device (100) is provided with a measurement unit. The measuring section measures a conduction state between a pair of first-type terminals in contact with a first-cell back electrode layer adjacent to a first side portion of the first divided groove, a conduction state between a pair of second-type terminals in contact with a second-cell back electrode layer adjacent to a second side portion of the first divided groove, and an insulation state between a pair of third-type terminals including one terminal (T) of the pair of first-type terminals and one terminal (T) of the pair of second-type terminals.

Description

Solar cell inspection device and inspection method
Technical Field
The present invention relates to an inspection apparatus and an inspection method for a solar cell.
Background
As an inspection apparatus for a solar cell, for example, an apparatus for imaging an object to be inspected by using a line scan camera is known. Patent document 1 describes an example of a conventional inspection apparatus.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 5885477
Disclosure of Invention
Technical problem to be solved
The back electrode layer of the solar cell is divided into a plurality of unit back electrode layers by a plurality of dividing grooves. A group of cell back electrode layers adjacent via the dividing groove is insulated by the dividing groove. There are cases where the back electrode layer contains defects associated with the dividing grooves. For example, in the step of forming the dividing grooves, a part of the back electrode layer is not removed and remains in the dividing grooves. The cell back electrode layers adjacent to each other through the dividing groove are connected to each other by a part of the back electrode layer remaining in the dividing groove, and the insulation resistance of the cell back electrode layers is reduced. In the inspection apparatus of patent document 1, such detection of defects is not assumed.
The invention aims to provide a solar cell inspection device and an inspection method which are helpful for appropriately detecting defects related to a dividing groove of a back electrode layer.
(II) technical scheme
The solar cell inspection apparatus according to the present invention includes a measurement unit that measures a conduction state between a first type of terminal pair in contact with a first cell back electrode layer adjacent to a first side portion of a dividing groove, a conduction state between a second type of terminal pair in contact with a second cell back electrode layer adjacent to a second side portion of the dividing groove, and an insulation state between a third type of terminal pair including one terminal of the first type of terminal pair and one terminal of the second type of terminal pair.
In the inspection apparatus, the conduction state and the insulation state measured by the measuring unit can be used for detecting defects related to the dividing grooves. This facilitates appropriate detection of defects associated with the dividing grooves.
In one example of the solar cell inspection apparatus, the inspection apparatus further includes an analysis unit that determines a defect in the dividing groove with reference to the conduction state and the insulation state measured by the measurement unit.
According to the inspection apparatus, the defect of the dividing groove can be appropriately determined.
In one example of the inspection apparatus for a solar cell, the analysis unit determines that a defect exists in the dividing groove when it is confirmed that the first type terminal pair and the second type terminal pair are electrically connected and it is confirmed that the third type terminal pair is not electrically connected.
According to the inspection apparatus, the presence of a defect in the dividing groove can be appropriately detected.
In one example of the inspection apparatus for a solar cell, the analysis unit determines that a defect is not present in the dividing groove when conduction between the first type terminal pair and the second type terminal pair is confirmed and insulation between the third type terminal pair is confirmed.
According to the inspection apparatus, it is possible to appropriately detect that there is no defect in the dividing groove.
In one example of the solar cell inspection apparatus, the analysis unit stops (i.e., retains) the determination regarding the defect of the dividing groove when it is confirmed that at least one of the first type terminal pair and the second type terminal pair is not in conduction.
According to the inspection apparatus, it is possible to suppress an error in determination regarding a defect of the dividing groove.
In one example of the solar cell inspection apparatus, the apparatus further includes a removal unit configured to flow a current between the third terminal pair.
According to the inspection apparatus, foreign matter remaining in the dividing groove may be removed by the flow of current.
In one example of the inspection apparatus for a solar cell, the inspection apparatus further includes the first type terminal pair, the second type terminal pair, and the third type terminal pair, the first type terminal pair is configured to be in contact with each end of the first cell back electrode layer, the second type terminal pair is configured to be in contact with each end of the second cell back electrode layer, the third type terminal pair includes one terminal of the first type terminal pair and one terminal of the second type terminal pair, and a distance between the terminals of the third type terminal pair in a longitudinal direction of the dividing groove is equal to a distance between the terminals of the first type terminal pair or a distance between the terminals of the second type terminal pair in the longitudinal direction of the dividing groove.
When the dividing groove includes a defect, the position of the defect in the longitudinal direction of the dividing groove differs depending on the processing conditions and the like when the dividing groove is formed. In the inspection apparatus, the substantially entire resistance of each cell back electrode layer is reflected in the measurement of the insulation resistance using the third type terminal pair. The degree of influence of the resistance of each cell back electrode layer on the measurement of the insulation resistance is suppressed from varying depending on the position of the defect in the dividing groove.
(III) advantageous effects
The inspection apparatus and the inspection method for a solar cell according to the present invention are useful for appropriately detecting defects related to the dividing grooves of the back electrode layer.
Drawings
Fig. 1 is a cross-sectional view of a solar cell.
Fig. 2 is a diagram (1) of a manufacturing process of a solar cell.
Fig. 3 is a view (2) of a manufacturing process of a solar cell.
Fig. 4 is a view (3) of a manufacturing process of a solar cell.
Fig. 5 is a view (4) of a manufacturing process of a solar cell.
Fig. 6 is a view (5) of a manufacturing process of a solar cell.
Fig. 7 is a view (6) of a manufacturing process of a solar cell.
Fig. 8 is a view (7) of a manufacturing process of a solar cell.
Fig. 9 is a view (8) of a manufacturing process of a solar cell.
Fig. 10 is a diagram showing an example of a groove defect.
Fig. 11 is a block diagram of the inspection apparatus.
Fig. 12 is a plan view of the back electrode pair.
Fig. 13 is an external view of the inspection apparatus.
Fig. 14 is a diagram showing an example of a standby state.
Fig. 15 is a flowchart showing an example of the inspection method.
Description of the reference numerals
10-a solar cell; 100-an inspection device; f11-measuring part; f13-analysis section; f15 — removal section; TA-first terminal pair; TB-a second terminal pair; TC-a third terminal pair; p-a dividing groove; p11-first side; p12-second side; e1 — first cell back electrode layer; e2 — second cell back electrode layer; s1 — a first end; s2-second end.
Detailed Description
Fig. 1 shows a cross section of a solar cell 10. The solar cell 10 is, for example, a compound solar cell among the categories according to the material of the light absorbing layer. Among the classifications according to thickness, the solar cell 10 is, for example, a thin film solar cell. An orthogonal coordinate system is used in the description of the solar cell 10. The plane defined by the X axis and the Y axis is referred to as a "reference plane". The plane of the solar cell 10 is parallel to the reference plane. The Z-axis is orthogonal to the plane of the solar cell 10. The direction parallel to the X axis is referred to as "transverse". One of the lateral directions is referred to as a "first lateral direction". The other lateral direction is referred to as a "second lateral direction". The direction parallel to the Y axis is referred to as "longitudinal". One of the machine directions is referred to as a "first machine direction". The other of the machine directions is referred to as a "second machine direction". The direction parallel to the Z axis is referred to as "thickness direction". One in the thickness direction is referred to as "first thickness direction". The other side in the thickness direction is referred to as "second thickness direction".
The solar cell 10 is, for example, a panel. The shape of the solar cell 10 is, for example, a quadrangle in a plan view of the solar cell 10. The outline of the solar cell 10 in a top view includes two sets of opposite sides. A set of opposing sides is parallel to the lateral direction. The other set of opposing edges is parallel to the longitudinal direction. The solar cell 10 includes a first main surface 10A and a second main surface 10B. The first main surface 10A faces in the first thickness direction. The second main surface 10B faces the second thickness direction. The main surfaces 10A and 10B are parallel to the reference surface.
The solar cell 10 includes a plurality of layers. In one example, the solar cell 10 includes a substrate 20, a back electrode layer 30, an intermediate layer 40, and a window layer 50. The substrate 20 includes a first main surface 20A and a second main surface 20B. The first main surface 20A faces in the first thickness direction. The second main surface 20B faces the second thickness direction. The second main surface 20B constitutes the second main surface 10B of the solar cell 10. The back electrode layer 30 is laminated on the first main surface 20A of the substrate 20. The back electrode layer 30 includes a first main surface 30A and a second main surface 30B. The first main surface 30A faces in the first thickness direction. The second main surface 30B faces the second thickness direction. The second main surface 30B faces the first main surface 20A of the substrate 20.
The intermediate layer 40 is laminated on the first main surface 30A of the back electrode layer 30. The intermediate layer 40 includes a first main surface 40A and a second main surface 40B. The first main surface 40A faces in the first thickness direction. The second main surface 40B faces the second thickness direction. The second main surface 40B faces the first main surface 30A of the back electrode layer 30. The structure of the intermediate layer 40 is exemplified. In the first example, the intermediate layer 40 is composed of the light absorbing layer 41. The light absorbing layer 41 is laminated on the first main surface 30A of the back electrode layer 30. The light absorbing layer 41 includes a first main surface 41A and a second main surface 41B. The first main surface 41A faces in the first thickness direction. The second main surface 41B faces the second thickness direction. The first main surface 41A constitutes the first main surface 40A of the intermediate layer 40. The second main surface 41B faces the first main surface 30A of the back electrode layer 30. In the second example, the intermediate layer 40 is composed of the light absorbing layer 41 and the buffer layer 42. The buffer layer 42 is laminated on the first main surface 41A of the light absorbing layer 41. The buffer layer 42 includes a first main surface 42A and a second main surface 42B. The first main surface 42A faces in the first thickness direction. The second main surface 42B faces the second thickness direction. The first main surface 42A constitutes the first main surface 40A of the intermediate layer 40. The second main surface 42B faces the first main surface 41A of the light absorbing layer 41. In the third example, the intermediate layer 40 has a structure in which another layer is further laminated on the intermediate layer 40 of the second example.
The window layer 50 is laminated on the first main surface 40A of the intermediate layer 40. The window layer 50 includes a first major surface 50A and a second major surface 50B. The first main surface 50A faces in the first thickness direction. The second main surface 50B faces the second thickness direction. The second main surface 50B faces the first main surface 40A of the intermediate layer 40.
In the classification of hardness, the substrate 20 is, for example, a rigid substrate, a flexible substrate, or a rigid flexible substrate. In the classification regarding electrical properties, the substrate 20 is, for example, an insulator or a semiconductor. In the classification regarding transparency, the substrate 20 is, for example, a transparent substrate. In one example, the substrate 20 is a glass substrate. The glass substrate is selected from aluminosilicate glass, soda-lime glass, borosilicate glass, lead glass, alkali barium glass, aluminoborosilicate glass, and alkali-free glass, for example.
The back electrode layer 30 is, for example, a metal electrode layer. The material of the back electrode layer 30 is selected from, for example, molybdenum (Mo), titanium (Ti), and chromium (Cr). The light absorbing layer 41 is, for example, a p-type semiconductor. The light absorbing layer 41 is, for example, a compound semiconductor. The kind of the compound semiconductor is selected from, for example, CIS compounds, CIGS compounds, CZTS compounds, CdTe compounds, and CdS compounds. The main components of the CIS compound are copper (Cu), indium (In), and selenium (Se). The main components of the CIGS compound are copper (Cu), indium (In), gallium (Ga), and selenium (Se). The main components of CZTS compounds are copper (Cu), zinc (Zn), tin (Sn), sulfur (S), and selenium (Se). The main components of CdTe compound are cadmium (Cd) and tellurium (Te). The main components of the CdS compound are cadmium (Cd) and sulfur (S).
The buffer layer 42 is, for example, a high resistance layer. The buffer layer 42 is, for example, an n-type semiconductor. The material of the buffer layer 42 is selected from, for example, cadmium sulfide (CdS), zinc oxide (ZnO), zinc sulfide (ZnS), and indium sulfide (InS).
The window layer 50 is, for example, an n-type semiconductor. The window layer 50 is, for example, a transparent conductive film. The transparent conductive film is selected from, for example, a tin oxide thin film, a zinc oxide thin film, and an indium oxide thin film.
The solar cell 10 includes a plurality of dividing grooves P and a plurality of cells 60. The plurality of dividing grooves P divide the back electrode layer 30, the intermediate layer 40, and the window layer 50 into a plurality of cells 60. The plurality of cells 60 are arranged in the lateral direction. In one example, the cells 60 are longitudinally long. The long side direction of the cell 60 is parallel to the longitudinal direction. The plurality of dividing grooves P includes three types of dividing grooves P. The kinds of the dividing grooves P are a first dividing groove P1, a second dividing groove P2, and a third dividing groove P3. The solar cell 10 includes a plurality of first dividing grooves P1, a plurality of second dividing grooves P2, and a plurality of third dividing grooves P3. In one example, the dividing grooves P1 to P3 are long in the longitudinal direction. The dividing grooves P1 to P3 are parallel to the longitudinal direction.
The first dividing groove P1 is formed in the back electrode layer 30. The back electrode layer 30 has a plurality of first dividing grooves P1. The plurality of first dividing grooves P1 are arranged in the lateral direction. The second dividing groove P2 is formed in the intermediate layer 40. The intermediate layer 40 has a plurality of second dividing grooves P2. The plurality of second dividing grooves P2 are arranged in the transverse direction. The third dividing groove P3 is formed in the intermediate layer 40 and the window layer 50. A plurality of third dividing grooves P3 are formed in the intermediate layer 40 and the window layer 50. A plurality of third dividing grooves P3 are arranged in the lateral direction. The intermediate layer 40 includes a first protrusion 40P filling the first dividing groove P1. The window layer 50 includes a second protrusion 50P filling the second dividing groove P2.
The cells 60 adjacent in the lateral direction are divided by the first dividing groove P1 and the third dividing groove P3. The cells 60 are electrically connected in series. The cell 60 includes the window layer 50 and the intermediate layer 40 disposed between the set of third division grooves P3 arranged in the lateral direction, and the back electrode layer 30 disposed between the set of first division grooves P1 arranged in the lateral direction. The back electrode layer 30, the intermediate layer 40, and the window layer 50 constituting one cell 60 are referred to as a "cell back electrode layer 61", a "cell intermediate layer 62", and a "cell window layer 63", respectively.
The back electrode layer 30 is divided into a plurality of cell back electrode layers 61 by the plurality of first dividing grooves P1. A set of the cell back electrode layers 61 laterally adjacent via the first dividing grooves P1 is referred to as a "back electrode pair E". One cell back electrode layer 61 included in the back electrode pair is insulated from the other back electrode layer 61 by the first dividing groove P1.
The cell back electrode layer 61 is connected to the cell window layer 63 of another cell 60 adjacent in the first lateral direction. The intermediate layer 40 and the window layer 50 are divided into a plurality of cell intermediate layers 62 and cell window layers 63 by the plurality of third dividing grooves P3. The cell window layer 63 is connected to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction. The cell intermediate layer 62 is divided into the first layer structural portion 62A and the second layer structural portion 62B by the second dividing groove P2. The first layer structure portion 62A is laminated on the cell back electrode layer 61. The second layer structure portion 62B is laminated on the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.
The cell intermediate layer 62 includes a first protrusion 40P filling the first dividing groove P1. The first protrusion 40P insulates one cell back electrode layer 61 included in the back electrode pair E from the other back electrode layer 61. The cell window layer 63 includes a second protrusion 50P filling the second dividing groove P2. The second protrusion 50P is connected to the cell back electrode layer 61 of another cell 60 adjacent in the second lateral direction.
The dividing grooves P1 to P3 are formed by scribing, for example. The first dividing groove P1 is formed by, for example, laser scribing. The second dividing groove P2 and the third dividing groove P3 are formed by, for example, mechanical scribing.
The solar cell 10 is manufactured, for example, as follows. In the first step shown in fig. 2, the substrate 20 is cleaned. In the second step shown in fig. 3, the back electrode layer 30 is formed on the substrate 20. The back electrode layer 30 is formed by, for example, vapor deposition. In the third step shown in fig. 4, the back electrode layer 30 is patterned, and a plurality of first dividing grooves P1 are formed on the back electrode layer 30. The first dividing groove P1 is formed by, for example, laser scribing. In the fourth step shown in fig. 5, the light absorbing layer 41 is formed on the back electrode layer 30. In one example, the fourth step includes the following steps. A precursor is formed as a metal thin film on the back electrode layer 30. The precursor is formed by, for example, evaporation. The precursor is annealed in a specific gas atmosphere. The precursor is changed into a compound by the annealing treatment. In one example, the precursor is selenized or sulfided by an annealing process. In the fifth step shown in fig. 6, a buffer layer 42 is formed on the light absorbing layer 41. The buffer layer 42 is formed by, for example, vapor deposition. In the sixth step shown in fig. 7, the intermediate layer 40 is patterned to form a plurality of second dividing grooves P2 in the intermediate layer 40. The second dividing groove P2 is formed by, for example, mechanical scribing. In the seventh step shown in fig. 8, a window layer 50 is formed on the intermediate layer 40. The window layer 50 is formed by, for example, vapor deposition. In the eighth step shown in fig. 9, the intermediate layer 40 and the window layer 50 are patterned, and a plurality of third dividing grooves P3 are formed in the intermediate layer 40 and the window layer 50. The third dividing groove P3 is formed by, for example, mechanical scribing.
The product of the solar cell 10 formed in the third step (see fig. 4) is referred to as "product 10X". The portion corresponding to the first dividing groove P1 in the thickness direction in the product 10X and the solar cell 10 is referred to as "designated portion Q". The width of the specifying portion Q in the lateral direction is equal to the width of the first dividing groove P1.
The back electrode layer 30 may contain a defect related to the dividing groove P (hereinafter referred to as a "groove defect"). Fig. 10 shows an example of a groove defect. In the step of forming the first dividing groove P1, a part of the designated portion Q of the back electrode layer 30 may remain in the first dividing groove P1 without being removed. A part of the designated portion Q remaining in the first divided groove P1 is referred to as a "remaining portion R". One cell back electrode layer 61 included in the back electrode pair E may be connected to the other cell back electrode layer 61 by the remaining portion R. The insulation resistance of the back electrode pair E is reduced at the portion where the back electrode pair E is connected by the remaining portion R. The remaining portion R is generated due to the influence of various processing conditions in the scribing process for forming the first dividing groove P1. The range and shape of the remaining portion R vary depending on the processing conditions.
Fig. 12 shows the back electrode pair E. The back electrode pair E includes a pair of cell back electrode layers 61. The cell back electrode layer 61 and the first dividing groove P1 are long in the longitudinal direction. The first dividing groove P1 includes a first side P11 and a second side P12. The side portions P11, P12 are long in the longitudinal direction of the first divided groove P1. A space of the first dividing groove P1 is formed between the first side P11 and the second side P12. One cell back electrode layer 61 included in the back electrode pair E is referred to as a "first cell back electrode layer E1". The other cell back electrode layer 61 included in the back electrode pair E is referred to as a "second cell back electrode layer E2". The first cell back electrode layer E1 is laterally adjacent to the first side portion P11 of the first dividing groove P1. The second cell back electrode layer E2 is laterally adjacent to the second side portion P12 of the first dividing groove P1.
The center of the unit back electrode layer 61 in the longitudinal direction is referred to as "electrode center SC". One end portion of the cell back electrode layer 61 in the longitudinal direction is referred to as "first end portion S1". The other end portion of the cell back electrode layer 61 in the longitudinal direction is referred to as "second end portion S2". A portion between the first end portion S1 and the electrode center SC in the longitudinal direction is referred to as "first intermediate portion S3". A portion between the second end portion S2 and the electrode center SC in the longitudinal direction is referred to as "second intermediate portion S4". One edge of the cell back electrode layer 61 in the longitudinal direction is referred to as "first edge S5". The other edge of the unit back electrode layer 61 in the longitudinal direction is referred to as "second edge S6". The first end S1 is a constant range including the first edge S5. The second end S2 is a constant range including the second edge S6.
Fig. 11 shows a block diagram of the inspection apparatus 100. The inspection apparatus 100 includes at least one of a function associated with measurement of a groove defect of the inspection object W and a function associated with removal of the remaining portion R. In the function related to the measurement of the groove defect, the electrical characteristics of the object W to be inspected are measured, and the groove defect of the object W to be inspected is detected with reference to the result. In the function associated with the removal of the remaining portion R, a current contributing to the evaporation of the remaining portion R is supplied to the back electrode pair E. The inspection apparatus 100 includes a plurality of terminals T and a plurality of functional blocks F10. The plurality of terminals T includes, for example, a first terminal pair TA, a second terminal pair TB, and a third terminal pair TC. The plurality of function blocks F10 include, for example, a measurement unit F11, an AD conversion unit F12, an analysis unit F13, a data conversion unit F14, and a removal unit F15.
The measurement portion F11 measures the conduction state between the first type terminal pair TA, the conduction state between the second type terminal pair TB, and the insulation state between the third type terminal pair TC. In one example, the measurement unit F11 includes a first measurement unit F11A and a second measurement unit F11B. The first measurement portion F11A measures the conduction state between the first type terminal pair TA and the conduction state between the second type terminal pair TB. The second measuring portion F11B measures the insulation state between the third terminal pair TC. The current flowing between the first type terminal pair TA or the resistance between the first type terminal pair TA reflects the conduction state between the first type terminal pair TA. In the measurement of the conduction state between the first terminal pair TA, for example, a current or a resistance between the first terminal pair TA is measured. The current flowing between the second terminal pair TB or the resistance between the second terminal pair TB reflects the conduction state between the second terminal pair TB. In the measurement of the conduction state between the second type terminal pair TB, for example, a current or a resistance between the second type terminal pair TB is measured. The resistance between the third terminal pair TC, or the current flowing between the third terminal pair TC reflects the insulation state between the third terminal pair TC. In the measurement of the insulation state between the third terminal pair TC, for example, the resistance or the current between the third terminal pair TC is measured.
The AD conversion section F12 converts the output signal of the measurement section F11 into a digital signal. The analyzer F13 determines a groove defect in the inspection target portion with reference to the output signal of the AD converter F12. The data conversion unit F14 converts the operation result of the analysis unit F13 into data of a predetermined format. The removed part F15 allows current to flow between the third terminal pair TC.
The first terminal pair TA includes a pair of terminals T. One terminal T of the first terminal pair TA may be denoted as "terminal TA 1". The other terminal T of the first terminal pair TA may be denoted as "terminal TA 2". The first terminal pair TA is in contact with the first cell back electrode layer E1. The second terminal pair TB includes a pair of terminals T. One terminal T of the second terminal pair TB may be represented as "terminal TB 1". There are cases where the other terminal T of the second terminal pair TB is denoted as "terminal TB 2". The second terminal pair TB is in contact with the second cell back electrode layer E2.
The third terminal pair TC includes one terminal T of the first terminal pair TA and one terminal T of the second terminal pair TB. In the first example, the third terminal pair TC includes a terminal TA1 of the first terminal pair TA and a terminal TB1 of the second terminal pair TB. In the second example, the third terminal pair TC includes a terminal TA1 of the first terminal pair TA and a terminal TB2 of the second terminal pair TB. In the third example, the third terminal pair TC includes a terminal TA2 of the first terminal pair TA and a terminal TB1 of the second terminal pair TB. In the fourth example, the third terminal pair TC includes a terminal TA2 of the first terminal pair TA and a terminal TB2 of the second terminal pair TB.
The cell back electrode layer 61 includes a first contacted portion to which one terminal T of the first type terminal pair TA or one terminal T of the second type terminal pair TB is contacted, and a second contacted portion to which the other terminal T of the first type terminal pair TA or the other terminal T of the second type terminal pair TB is contacted. The first contacted portion and the second contacted portion are selected from, for example, the first end portion S1, the second end portion S2, the first intermediate portion S3, and the second intermediate portion S4 of the cell back electrode layer 61.
The distance between the first contacted portion and the second contacted portion in the longitudinal direction is referred to as a "measured distance". The contents of the measured distance are exemplified. In the first example, the measurement distance is equal to or greater than the first predetermined distance. The first predetermined distance corresponds to, for example, a distance between the first end S1 and the second end S2 in the longitudinal direction. In a second example, the measured distance is equal to or greater than a second predetermined distance. The second predetermined distance corresponds to the distance between the first end S1 or the second end S2 and the electrode center SC in the longitudinal direction. The longer the measurement distance, the less the influence of the position of the groove defect in the first divided groove P1 on the measurement regarding the resistance between the third terminal pair TC. This helps to improve the accuracy of the measurement of the resistance.
The relationship between the first terminal pair TA and the first cell back electrode layer E1 is exemplified. In the first example, the terminal TA1 contacts the first end S1. The terminal TA2 is in contact with the second end S2. In the second example, the terminal TA1 is in contact with the first end S1. The terminal TA2 is in contact with the second intermediate portion S4. In the third example, the terminal TA1 is in contact with the first end S1. Terminal TA2 is in contact with electrode center SC. In the fourth example, the terminal TA1 is in contact with the first end S1. The terminal TA2 is in contact with the first intermediate portion S3. In the fifth example, the terminal TA1 is in contact with the first end S1. The terminal TA2 is in contact with a portion of the first end portion S1 different from the portion in contact with the terminal TA 1.
The relationship between the second terminal pair TB and the second cell back electrode layer E2 is exemplified. In the first example, the terminal TB1 contacts the first end S1. The terminal TB2 is in contact with the second end S2. In the second example, the terminal TB1 is in contact with the first end S1. The terminal TB2 is in contact with the second intermediate portion S4. In the third example, the terminal TB1 is in contact with the first end S1. Terminal TB2 is in contact with electrode center SC. In the fourth example, the terminal TB1 is in contact with the first end S1. The terminal TB2 is in contact with the first intermediate portion S3. In the fifth example, the terminal TB1 is in contact with the first end S1. The terminal TB2 is in contact with a portion of the first end portion S1 other than the portion in contact with the terminal TB 1.
Fig. 13 shows an example of the hardware configuration of the inspection apparatus 100. An orthogonal coordinate system is used in the description of the inspection apparatus 100. The plane defined by the X axis and the Y axis is referred to as a "reference plane". The plane of the inspection apparatus 100 is parallel to the reference plane. The Z-axis is orthogonal to the plane of the inspection apparatus 100. The direction parallel to the X axis is referred to as "width direction". The direction parallel to the Y axis is referred to as a "depth direction". The direction parallel to the Z axis is referred to as "height direction". In one example, the lateral direction of the solar cell 10 is parallel to the width direction of the inspection apparatus 100. The longitudinal direction of the solar cell 10 is parallel to the depth direction of the inspection apparatus 100. The thickness direction of the solar cell 10 is parallel to the height direction of the inspection apparatus 100.
The object W is, for example, a product 10X (see fig. 4 and 10). The test object W includes a first main surface WA and a second main surface WB. The first main surface WA of the test object W is the first main surface 30A of the back electrode layer 30. The second main surface WB of the test object W is the second main surface 20B of the substrate 20. The size of the object W can be arbitrarily selected. In one example, the length of the object W in the lateral direction is included in the range of 600mm to 700 mm. The length of the object W in the longitudinal direction is included in the range of 1500mm to 1600 mm.
Inspection apparatus 100 includes probe unit 200, measurement instrument 300, power supply unit 400, control unit 500, and terminal device 600. Each terminal pair TA, TB, and TC is included in the probe cell 200. The measurement unit F11 is composed of, for example, a probe unit 200, a measurement instrument 300, and a control unit 500. AD conversion unit F12 is included in measurement instrument 300 or control unit 500. The analysis unit F13 and the data conversion unit F14 are included in the control unit 500. The data of the designated format converted by the data conversion unit F14 is, for example, data of a format used in the terminal device 600. The removing unit F15 is composed of, for example, the probe unit 200, the power supply unit 400, and the control unit 500.
In one example, the inspection apparatus 100 further includes a conveying unit 110 and a table 120. The transport unit 110 moves the probe unit 200 and the stage 120 relative to each other. The table 120 supports an object W to be inspected. The structure of the moving object that is moved by the conveying unit 110 will be described as an example. In the first example, the transport unit 110 moves the probe unit 200 relative to the stage 120. In the second example, the conveying unit 110 moves the stage 120 relative to the probe unit 200. In the third example, the transport unit 110 moves both the probe unit 200 and the stage 120. The transfer unit 110 includes at least one of a first actuator for moving the probe unit 200 and a second actuator for moving the stage 120. The first actuator converts the electric energy supplied from the power source into the motion of the probe unit 200. The second actuator converts the electric power supplied from the power source into the movement of the table 120.
The structure of the relative movement of the conveying unit 110 will be described as an example. In the first example, the transport unit 110 includes a first transport structure for relatively moving the probe unit 200 and the stage 120 in the height direction of the inspection apparatus 100. In the second example, the conveying unit 110 includes a second conveying structure for relatively moving the probe unit 200 and the stage 120 in the width direction. In the third example, the conveyance unit 110 includes a third conveyance structure for relatively moving the probe unit 200 and the stage 120 in the depth direction. In the fourth example, the conveying section 110 includes at least two conveying structures in the first to third examples. In the illustrated example, the conveying unit 110 includes a first conveying structure that moves the probe unit 200 relative to the stage 120 in the height direction.
The probe unit 200 includes a plurality of terminals T. The terminal T is, for example, a terminal corresponding to the two-wire method (japanese: 2 terminal method) or a terminal corresponding to the four-wire method (japanese: 4 terminal method). The plurality of terminals T includes a plurality of first terminal pairs TA, a plurality of second terminal pairs TB, and a plurality of third terminal pairs TC. In one example, the probe unit 200 includes a first probe unit 210 and a second probe unit 220. The transport unit 110 moves the probe units 210 and 220 relative to the table 120 in the height direction.
The first probe unit 210 includes a first unit body 211 and a plurality of terminals T. The plurality of terminals T included in the first probe cell 210 are a part of all the terminals T included in the probe cell 200. The first unit body 211 is attached to the conveying unit 110. The first unit body 211 includes a case 211A and a relay circuit 211B. The long side direction and the short side direction are defined in the case 211A. The longitudinal direction of the case 211A is parallel to the width direction of the inspection apparatus 100. The short side direction of the housing 211A is parallel to the depth direction of the inspection apparatus 100. The relay circuit 211B is provided in the housing 211A. The plurality of terminals T are provided outside the housing 211A. The plurality of terminals T are supported by the housing 211A. The plurality of terminals T are arranged in the longitudinal direction of the housing 211A. The plurality of terminals T are electrically connected to the relay circuit 211B.
The number of terminals T of the first probe unit 210 is exemplified. In the first example, the number of terminals T of the first probe unit 210 is equal to the number of unit back electrode layers 61 provided on the test object W. In the second example, the number of terminals T of the first probe unit 210 is larger than the number of unit back electrode layers 61 provided on the test object W. In the third example, the number of terminals T of the first probe unit 210 is smaller than the number of unit back electrode layers 61 provided on the test object W.
The second probe unit 220 includes a second unit body 221 and a plurality of terminals T. The plurality of terminals T included in the second probe unit 220 are a part of all the terminals T included in the probe unit 200. The second unit main body 221 is attached to the conveying unit 110. The second unit main body 221 includes a case 221A and a relay circuit 221B. The long side direction and the short side direction are defined in the case 221A. The longitudinal direction of the casing 221A is parallel to the width direction of the inspection apparatus 100. The short side direction of the casing 221A is parallel to the depth direction of the inspection apparatus 100. The relay circuit 221B is provided in the casing 221A. The plurality of terminals T are provided outside the housing 221A. The plurality of terminals T are supported by the housing 221A. The plurality of terminals T are arranged in the longitudinal direction of the housing 221A. The plurality of terminals T are electrically connected to the relay circuit 221B.
The number of terminals T of the second probe unit 220 is exemplified. In the first example, the number of terminals T of the second probe unit 220 is equal to the number of unit back electrode layers 61 provided on the test object W. In the second example, the number of terminals T of the second probe unit 220 is larger than the number of unit back electrode layers 61 provided on the test object W. In the third example, the number of terminals T of the second probe unit 220 is smaller than the number of unit back electrode layers 61 provided on the test object W.
In one example, the first probe unit 210 and the second probe unit 220 include the same number of terminals T. Each terminal T is in contact with the object W in a state where the probe unit 200 is placed on the object W so as to be able to measure the electrical characteristics of the object W (hereinafter referred to as a "standby state"). Fig. 14 shows an example of the standby state. In the standby state, the terminals T of the probe units 210 and 220 form a pair TL of vertical terminals arranged in the vertical direction. The vertical terminal pair TL includes one terminal T of the first probe cell 210 and one terminal T of the second probe cell 220. Each longitudinal terminal pair TL corresponds to either the first terminal pair TA or the second terminal pair TB. The probe unit 200 includes the same number of vertical terminal pairs TL as the number of all the terminals T provided to the first probe unit 210 or the second probe unit 220.
With respect to a set of longitudinal terminal pairs TL adjacent in the lateral direction, one longitudinal terminal pair TL corresponds to a first terminal pair TA, and the other longitudinal terminal pair TL corresponds to a second terminal pair TB. In one example, the terminal pairs TA to TC and the back electrode pair E have the following relationship. The terminal TA1 of the first terminal pair TA is in contact with the first end S1 of the first cell back electrode layer E1. The terminal TA2 of the first terminal pair TA is in contact with the second end S2 of the first cell back electrode layer E1. The terminal TB1 of the second terminal pair TB is in contact with the first end S1 of the second cell back electrode layer E2. The terminal TB2 of the second terminal pair TB is in contact with the second end S2 of the second cell back electrode layer E2. The third terminal pair TC includes a terminal TA1 of the first terminal pair TA and a terminal TB2 of the second terminal pair TB, or includes a terminal TA2 of the first terminal pair TA and a terminal TB1 of the second terminal pair TB.
The distance between the terminal TA1 of the first type terminal pair TA and the terminal TA2 in the longitudinal direction of the first dividing groove P1 is equal to the distance between the terminal TB1 of the second type terminal pair TB and the terminal TB 2. The distance of the third terminal pair TC in the longitudinal direction of the first divided groove P1 is equal to the distance of the terminal TA1 and the terminal TA2 of the first terminal pair TA or the distance of the terminal TB1 and the terminal TB2 of the second terminal pair TB in the longitudinal direction of the first divided groove P1.
Measuring device 300 is electrically connected to probe unit 200. The configuration of measuring instrument 300 is exemplified. In the first example, measuring instrument 300 includes a multimeter. In the second example, measuring instrument 300 includes a separately configured current meter and a resistance measuring instrument. The measurer 300 measures the conduction state between the longitudinal terminal pair TL and the insulation state between the third terminal pair TC. In the measurement of the on state, for example, a constant voltage is applied between the pair of longitudinal terminals TL, and the current flowing between the pair of longitudinal terminals TL is measured. The resistance between the pair of longitudinal terminals TL is measured from the voltage and current between the pair of longitudinal terminals TL. In the measurement of the insulation state, for example, a constant voltage is applied between the third terminal pair TC, and the current flowing between the third terminal pair TC is measured. The resistance between the third terminal pair TC is measured from the voltage and current between the third terminal pair TC. The measurer 300 outputs conduction measurement information including information on the conduction state between the vertical terminal pair TL and insulation measurement information including information on the insulation state between the third terminal pair TC.
The power supply unit 400 is electrically connected to the probe unit 200. The power supply unit 400 supplies a direct current to the probe unit 200. The power supply unit 400 outputs, for example, a direct current of a magnitude that contributes to evaporation of the residue R.
Control unit 500 is electrically connected to probe unit 200, measurement instrument 300, and power supply unit 400. The control unit 500 includes a microcontroller 510. The microcontroller 510 includes an analysis unit F13. The microcontroller 510 outputs a control signal for switching the setting of the relay circuits 211B, 221B of the probe unit 200 to the probe unit 200.
The connection relationships between measuring instrument 300 and power supply unit 400 selected by setting of relay circuits 211B and 221B by control unit 500 and terminals T include, for example, the following first to third connection states. In the first connection state, any one of the plurality of vertical terminal pairs TL is connected to the measurer 300. The measurer 300 measures the conduction state between the connected pair of longitudinal terminals TL. In the second connection state, any one of the plurality of third terminal pairs TC is connected to measurement instrument 300. The measurer 300 measures the insulation state between the connected third terminal pair TC. In the third connection state, any one of the plurality of third terminal pairs TC is connected to the power supply unit 400. The dc voltage of the power supply unit 400 is applied between the third terminal pair TC connected to the power supply unit 400. In the case where there is a groove defect in the back electrode pair E corresponding to the third terminal pair TC connected to the power supply unit 400, a direct current flows between the third terminal pair TC.
Control unit 500 receives conduction measurement information and insulation measurement information from measuring device 300. The analysis unit F13 of the microcontroller 510 determines a groove defect in the test object W by referring to the conduction measurement information and the insulation measurement information. The judgment processing regarding the groove defect includes, for example, conduction judgment processing, insulation judgment processing, and defect judgment processing.
The contents of the conduction determination processing are exemplified. The conduction state between the pair of vertical terminals TL is determined based on the conduction measurement information. This includes determination of the conduction state between the first terminal pair TA and determination of the conduction state between the second terminal pair TB based on the conduction measurement information. In one example, the on state is determined for all the vertical terminal pairs TL. When the current between the vertical terminal pair TL is equal to or greater than the first reference current, or when the resistance between the vertical terminal pair TL is smaller than the first reference resistance, it is determined that the vertical terminal pair TL is conducted. When the current between the pair of vertical terminals TL is smaller than the first reference current or when the resistance between the pair of vertical terminals TL is equal to or greater than the first reference resistance, it is determined that the pair of vertical terminals TL is not in conduction. Information containing the determination result regarding the conduction state between the pair of vertical terminals TL is referred to as "conduction determination information".
The storage unit of the microcontroller 510 stores the identification information of the vertical terminal pair TL in association with the conduction determination information. The individual vertical terminal pair TL is provided with unique identification information. When the on state is determined, the on determination information corresponding to the vertical terminal pair TL to be determined is updated.
The contents of the insulation determination process are exemplified. The insulation state between the third terminal pair TC is determined based on the insulation measurement information. In one example, the insulation state is determined for all the third terminal pairs TC. When the resistance between the third terminal pair TC is equal to or higher than the second reference resistance, or when the current between the third terminal pair TC is smaller than the second reference current, it is determined that the third terminal pair TC is insulated from each other. When the resistance between the third terminal pair TC is smaller than the second reference resistance or when the current between the third terminal pair TC is equal to or larger than the second reference current, it is determined that the third terminal pair TC is not insulated. Information containing the determination result regarding the state of insulation between the third terminal pair TC is referred to as "insulation determination information".
The storage unit of the microcontroller 510 stores the insulation determination information in association with the identification information of the third terminal pair TC. Unique identification information is set in each third terminal pair TC. When the insulation state is determined, insulation determination information corresponding to the third type terminal pair TC to be determined is updated.
The contents of the defect determination processing are exemplified. The state of the groove defect with respect to the first divided groove P1 is determined based on the conduction determination information and the insulation determination information. In one example, the state regarding the groove defect is determined for all the first divided grooves P1. In the defect determination process, the insulation determination information of the third type terminal pair TC to be determined, the conduction determination information of the first type terminal pair TA corresponding to the third type terminal pair TC, and the conduction determination information of the second type terminal pair TB are referred to. When the first terminal pair TA is electrically connected, the second terminal pair TB is electrically connected, and the third terminal pair TC is not insulated, it is determined that a groove defect exists in the first divided groove P1 corresponding to the third terminal pair TC to be determined. When the first terminal pair TA is electrically connected to each other, the second terminal pair TB is electrically connected to each other, and the third terminal pair TC is electrically insulated from each other, it is determined that no groove defect exists in the first divided groove P1 corresponding to the third terminal pair TC to be determined. When at least one of the first terminal pair TA and the second terminal pair TB is not conducted, the determination regarding the groove defect of the first divided groove P1 corresponding to the third terminal pair TC to be determined is stopped. Information containing the determination result regarding the groove defect is referred to as "defect determination information".
The storage unit of the microcontroller 510 stores the identification information of the first dividing groove P1 in association with the defect determination information. Unique identification information is set in each first divided groove P1. When the state regarding the groove defect is determined, the defect determination information of the first divided groove P1 to be determined is updated. When the determination regarding the groove defect is stopped, the defect determination information of the first divided groove P1 to be determined is also updated. The defect judgment information in this case includes information indicating that the judgment about the groove defect is stopped.
The contents of the judgment processing regarding the groove defect are collated.
The analysis unit F13 determines that a groove defect exists in the first divided groove P1 when conduction between the first terminal pair TA and the second terminal pair TB is confirmed based on the conduction measurement information and insulation between the third terminal pair TC is not confirmed based on the insulation measurement information.
The analysis unit F13 determines that no groove defect exists in the first divided groove P1 when conduction between the first terminal pair TA and the second terminal pair TB is confirmed based on the conduction measurement information and insulation between the third terminal pair TC is confirmed based on the insulation measurement information.
The analysis unit F13 stops the determination of the groove defect of the first divided groove P1 when it is confirmed from the conduction measurement information that at least one of the first terminal pair TA and the second terminal pair TB is not conducting.
The terminal apparatus 600 is connected to the control unit 500 via a communication device so as to be capable of wired communication or wireless communication with the control unit 500. Control section 500 outputs inspection information including at least one of conduction measurement information, insulation measurement information, conduction determination information, insulation determination information, and defect determination information to terminal apparatus 600. The terminal apparatus 600 displays information based on the inspection information, for example, in a display.
Fig. 15 shows an example of a method for inspecting the object W.
In the first process, the probe unit 200 is set in a standby state. In one example, the first step is performed as follows. The conveyance unit 110 moves the probe unit 200 relative to the object W so that the terminals T of the probe units 210 and 220 come into contact with the object W. Each terminal T of the first probe cell 210 is in contact with the first end S1 of each cell back electrode layer 61. Each terminal T of the second probe cell 220 is in contact with the second end portion S2 of each cell back electrode layer 61. In a state where the first process is completed, with respect to each of all the cell back electrode layers 61, one terminal T is in contact with the first end portion S1, and one terminal T is in contact with the second end portion S2.
In the second step, the control unit 500 executes the conduction determination process. In one example, the second step is performed as follows. The control unit 500 sets the state of the relay circuits 211B, 221B of the probe unit 200 to the first connection state so that the current for measurement flows between the pair of vertical terminals TL to be measured. When the terminal T of the first probe cell 210 and the terminal T of the second probe cell 220 included in the vertical terminal pair TL to be measured are electrically connected to the cell back electrode layer 61, respectively, a current for confirmation flows between the vertical terminal pair TL to be measured. The control unit 500 sequentially switches the pair of vertical terminals TL to be measured. Measurer 300 outputs conduction measurement information to control unit 500. The control unit 500 determines the conduction state between the pair of vertical terminals TL based on the conduction measurement information. When the second process is completed, the conduction determination information is obtained for all the vertical terminal pairs TL.
When there is a non-conductive vertical terminal pair TL (hereinafter referred to as a "non-conductive vertical terminal pair TL"), the non-conductive vertical terminal pair TL is detected by the conduction determination process. In the non-conductive longitudinal terminal pair TL, at least one terminal T is not electrically connected to the cell back electrode layer 61. The reason why the terminal T is not electrically connected to the cell back electrode layer 61 includes, for example, at least one of the following first to third reasons. In the first reason, at least one terminal T of the pair of longitudinal terminals TL, which is not in contact with the cell back electrode layer 61, is located away from the cell back electrode layer 61. In the second reason, foreign substances exist on the surface of at least one terminal T of the longitudinal terminal pair TL, which is not in contact with the cell back electrode layer 61. The foreign matter present on the surface of the terminal T includes, for example, an oxide film formed on the surface of the terminal T, dirt adhering to the terminal T, and the like. In a third cause, at least one terminal T of the first terminal pair TA burns out.
In the third step, the control unit 500 executes the insulation determination process. In one example, the third step is performed as follows. The control unit 500 sets the state of the relay circuits 211B, 221B of the probe unit 200 to the second connection state so that the current for measurement flows between the third type terminal pair TC to be measured. When the third terminal pair TC to be measured is insulated from each other, the measurement current does not flow between the third terminal pair TC. The control unit 500 sequentially switches the third terminal pair TC to be measured. Measurer 300 outputs insulation measurement information to control unit 500. The control unit 500 determines the insulation state between the third terminal pair TC based on the insulation measurement information. In a state where the third step is completed, insulation determination information is obtained for all the third terminal pairs TC.
In the fourth process, the control unit 500 performs a defect determination process. In one example, the fourth process is performed as follows. The control unit 500 determines the groove defect of the first divided groove P1 to be determined based on the conduction determination information and the insulation determination information. In a state where the fourth process is completed, the defect determination information is obtained for all the first divided grooves P1.
In the fifth process, the control unit 500 executes energization processing. In one example, the fifth step is performed as follows. The control unit 500 sets the state of the relay circuits 211B, 221B of the probe unit 200 to the third connection state so that the removal current flows between the third type terminal pair TC to be energized. The removal current is a high current suitable for removing the remaining portion R. The removal current is larger than the measurement current. When the remaining portion R is present in the first divided groove P1 corresponding to the third terminal pair TC to be energized, the removal current flows between the third terminal pair TC. The remaining portion R may evaporate as the removal current flows. When the remaining portions R connecting the laterally adjacent cell back electrode layers 61 are evaporated, the adjacent cell back electrode layers 61 are insulated by the first dividing grooves P1. The control unit 500 sequentially switches the third terminal pair TC to be energized.
The back electrode pair E containing the groove defect is referred to as a "defect electrode pair". The back electrode pair E containing no groove defect is referred to as a "normal electrode pair". The insulation resistance of the defective electrode pair is lower than that of the normal electrode pair. When the remaining portion R of the defective electrode pair is removed by the energization process, the insulation resistance of the electrode pair increases. In one example, the insulation resistance of the back electrode pair E that migrates from the defective electrode pair to the normal electrode pair is substantially equal to the insulation resistance of the normal electrode pair existing from the beginning.
In the sixth step, the control unit 500 executes the insulation determination process again. In one example, the sixth step is performed as follows. The control unit 500 sets the state of the relay circuits 211B, 221B of the probe unit 200 to the second connection state so that the current for measurement flows between the third type terminal pair TC to be measured. The control unit 500 sequentially switches the third terminal pair TC to be measured. Measurer 300 outputs insulation measurement information to control unit 500. The control unit 500 determines the insulation state between the third terminal pair TC based on the insulation measurement information. In a state where the sixth step is completed, insulation determination information is obtained for all the third terminal pairs TC.
In the seventh process, the control unit 500 executes the defect determination process again. In one example, the seventh step is performed as follows. The control unit 500 determines the groove defect of the first divided groove P1 to be determined based on the conduction determination information and the insulation determination information. In a state where the seventh process is completed, the defect determination information is obtained for all the first divided grooves P1.
The inspection method of the object W may be different from the inspection method of fig. 15. The inspection method of the first example does not include the fifth to seventh steps. The inspection method of the second example does not include the sixth and seventh steps. In the inspection method of the third example, in addition to the fifth step, the energization process is performed after the second step is performed. In the inspection method of the fourth example, in addition to the fifth step, the energization process is performed after the third step is performed. In the inspection method of the fifth example, in addition to the fifth step, the energization process is performed after the sixth step is performed. In the inspection method of the sixth example, except for the fifth difference, the energization process is performed after the seventh process is performed. The inspection method of the seventh example includes at least two of the contents of the third to sixth examples. In the inspection method according to the eighth embodiment, the fifth step is omitted in any of the inspection methods according to the third to seventh embodiments.
The inspection method of the ninth example further includes an eighth step and a ninth step. The eighth process is performed between the second process and the third process. In the conduction determination processing in the second step, the non-conductive vertical terminal pair TL is detected. In the case where the non-conductive vertical terminal pair TL exists, in the insulation determination process, it may be impossible to accurately detect that the adjacent cell back electrode layer 61 is insulated by the first dividing groove P1. When the non-conductive vertical terminal pair TL is present, the remaining portion R may not be removed in the energization process. The conduction determination information can be used as information for confirming whether or not the insulation determination process and the energization process are appropriately executed.
In the eighth step, the control unit 500 refers to the conduction determination information to determine whether or not the number of the non-conductive vertical terminal pairs TL is equal to or greater than a predetermined number. The predetermined number is an integer of 1 or more. The third step is performed when the number of the non-conductive vertical terminal pairs TL is less than the predetermined number. The ninth step is performed when the number of the non-conductive vertical terminal pairs TL is equal to or greater than the predetermined number. In the ninth step, the control unit 500 causes a predetermined display device to output guidance information. The guidance information includes: for example, at least one of information indicating that the TL is included in the non-conductive vertical terminal, information guiding resetting of the probe unit 200, and information guiding execution of inspection regarding the state of the probe unit 200. The display device includes, for example, a terminal device 600.
The above description of the embodiments is not intended to limit the inspection apparatus for solar cells and the modes that can be adopted by the inspection apparatus according to the present invention. The inspection apparatus for a solar cell and the inspection apparatus according to the present invention can adopt a different form from the form exemplified in the embodiment. Examples thereof include a mode in which a part of the configuration of the embodiment is replaced, changed, or omitted, or a mode in which a new configuration is added to the embodiment.

Claims (10)

1. An inspection apparatus for a solar cell, comprising a measuring unit,
the measurement portion measures a conduction state between a pair of first-type terminals in contact with a first cell back electrode layer adjacent to a first side portion of a dividing groove, a conduction state between a pair of second-type terminals in contact with a second cell back electrode layer adjacent to a second side portion of the dividing groove, and an insulation state between a pair of third-type terminals including one terminal of the pair of first-type terminals and one terminal of the pair of second-type terminals.
2. The inspection apparatus for a solar cell according to claim 1,
the defect detection device further includes an analysis unit that determines a defect of the dividing groove with reference to the conduction state and the insulation state measured by the measurement unit.
3. The inspection apparatus for a solar cell according to claim 2,
the analysis unit determines that a defect exists in the dividing groove when conduction between the first type terminal pair and the second type terminal pair is confirmed and insulation between the third type terminal pair is not confirmed.
4. The inspection apparatus for solar cells according to claim 2 or 3,
the analysis unit determines that there is no defect in the dividing groove when conduction between the first type terminal pair and the second type terminal pair is confirmed and insulation between the third type terminal pair is confirmed.
5. The inspection apparatus for a solar cell according to any one of claims 2 to 4,
the analysis unit stops the determination regarding the defect of the dividing groove when it is confirmed that at least one of the first type terminal pair and the second type terminal pair is not connected.
6. The inspection apparatus for a solar cell according to any one of claims 1 to 5,
the third terminal pair is provided with a removing portion for flowing a current between the third terminal pair.
7. The inspection apparatus for a solar cell according to any one of claims 1 to 6,
further comprises the first terminal pair, the second terminal pair, and the third terminal pair,
the first terminal pair is configured to be in contact with each end of the first cell back electrode layer,
the second terminal pair is configured to be in contact with each end of the second cell back electrode layer,
the third terminal pair includes one terminal of the first terminal pair and one terminal of the second terminal pair,
a distance between the terminals of the third type terminal pair in the longitudinal direction of the dividing groove is equal to a distance between the terminals of the first type terminal pair or a distance between the terminals of the second type terminal pair in the longitudinal direction of the dividing groove.
8. A method for inspecting a solar cell, which detects a defect in a dividing groove that divides a back electrode layer into a plurality of unit back electrode layers, comprising:
a conduction determination processing step of measuring a conduction state between a first type of terminal pair in contact with a first cell back electrode layer adjacent to a first side portion of the dividing groove and a conduction state of a second type of terminal pair in contact with a second cell back electrode layer adjacent to a second side portion of the dividing groove; and
and a first insulation determination processing step of measuring an insulation state between a third type of terminal pair including one terminal of the first type of terminal pair and one terminal of the second type of terminal pair.
9. The method for inspecting a solar cell according to claim 8, further comprising:
and an energization processing step of flowing a current between the third terminal pair after the first insulation determination processing step is performed.
10. The method for inspecting a solar cell according to claim 9, further comprising:
and a second insulation determination processing step of measuring an insulation state between the third type of terminal pair after the energization processing step is performed.
CN202011358540.9A 2019-12-26 2020-11-27 Solar cell inspection device and inspection method Pending CN113053778A (en)

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