TW201005977A - Method and apparatus for manufacturing solar battery - Google Patents

Abstract

A method for manufacturing a solar battery, includes: forming a photoelectric converter which includes a plurality of compartment elements, and in which the compartment elements adjacent to each other are electrically connected; specifying the compartment element having a structural defect in the photoelectric converter; restricting a portion in which the structural defect exists in the compartment element so as to focus an area in which the structural defect exists in the compartment element based on a resistance value distribution that is obtained by measuring resistance values of portions between the compartment elements adjacent to each other, capture the focused area in which the structural defect exists using an image capturing section, and accurately specify a position of the structural defect from an obtained image; and removing the structural defect so as to irradiate a portion in which the structural defect exists with a laser beam.

Description

201005977 VI. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a method for manufacturing a solar cell and a device for manufacturing a solar cell, and more particularly to a method for manufacturing a solar cell capable of detecting structural defects and repairing at low cost. Method and manufacturing device for solar cells. [Prior Art] From the viewpoint of efficient energy utilization, solar cells have been increasingly widely used in recent years. In particular, the energy conversion rate per unit area of a solar cell using single crystals is good. On the other hand, however, the solar cell utilizing 矽 single crystals consumes a large amount of energy in the manufacture of the ingot due to the use of a twinned circle in which a single crystal ingot is sliced, and the manufacturing cost is high. In particular, when a solar cell is installed in a large area such as a house, it is costly to manufacture a solar cell using a single crystal. Therefore, a solar cell using an amorphous (amorphous) tantalum film which can be produced at a lower cost has been widely used as a low-cost solar cell. The amorphous quartz solar cell uses a semiconductor film called a pin-bonded layer structure, which is a p-type and a p-type film, which sandwiches an amorphous film which generates electrons and holes when light is received ( Type i). Electrodes are formed on both sides of the semiconductor film. The electrons and holes generated by the sunlight are actively moved by the potential difference of the P-type and n-type semiconductors, and the potential difference is generated between the electrodes on both sides by continuously repeating this. As a specific configuration of such an amorphous germanium solar cell, for example, a transparent electrode such as TCO (Transparent Conductive Oxide) is used as a lower electrode in a glass plate to form a film, and 139429.doc 201005977 is formed thereon. A semiconductor film of non-μ Shi Xi, and an Ag film as an upper electrode. In a non-crystalline solar cell including a photoelectric conversion body including the upper and lower electrodes and the semiconductor film, if the layers are formed uniformly over a wide area on the substrate, there is a problem that the potential difference is small and the resistance value is increased. Therefore, for example, forming a division by electrically dividing the photoelectric conversion body one by one with a specific size

The element 'electrically connected phase i adjacent to the dividing elements are mutually, #& constitutes an amorphous germanium solar cell. Specifically, 'a photoelectric conversion body formed uniformly on a wide area on a substrate is formed using laser light or the like to form a groove called a cutting line (4) such as (4), and a plurality of strip-shaped dividing elements are obtained, and the division is performed. The configuration in which the elements are electrically connected in series to each other. However, in such a structured amorphous solar cell, it is known that several structural defects occur during the manufacturing stage. For example, in the case of the amorphous 7 film, particles are mixed or pinholes are generated so that the upper electrode and the lower electrode may be partially short-circuited. Further, after the photoelectric conversion body is formed on the substrate and divided into a plurality of division elements by the dicing line, the metal film constituting the upper electrode is melted along the (4) line to reach the lower electrode, and the upper electrode and the lower electrode may be partially short-circuited. . In the case of the money conversion body, if a structural defect is locally short-circuited between the upper electrode and the lower electrode with the semiconductor medium interposed therebetween, the power generation electric power 1 is lowered or the photoelectric conversion efficiency is lowered. Therefore, in the conventional manufacturing process of the spar solar cell, the structural defect is removed by detecting a structural defect such as such a short circuit, and the failure is repaired. 139429.doc 201005977

A method of constructing a component that divides a defect. On the other hand, as described above, a method of detecting a defect by applying a bias voltage to the entire division element can specify the approximate defect position in the division element, but it is difficult to specifically display the detailed position, and it is also necessary to scan the infrared sensor. The problem of detection accuracy or cost of the device for detection is large. Further, since the bias voltage is applied to the extent of heat generation at the defect, there is also a fear of damage to the semiconductor film. The method of detecting defects by magnifying observation by a CCD camera or the like is necessary to scan the camera over the entire area of the solar cell. Especially in the case where the solar cell has a large area, the detection of structural defects requires labor and time. Moreover, there are also defects in which no defects appearing on the surface layer are detected. The method of measuring the FF of each divided element by irradiating light can detect the defective component itself, but it is difficult to specify where the defective element is defective. Then, in the defect detection method described above, since only the approximate defect position can be specified, when the defect is repaired by laser light or the like, the semiconductor film is largely removed, and the characteristics of the solar cell are not suitable. 139429.doc 201005977 An unsuitable problem in appearance. Further, in the case where a bias voltage is applied only to specify a defect position to remove a defect, the bias voltage must be raised. However, if a bias voltage higher than necessary is applied, there is a problem that damage is caused to a normal portion where no defect occurs. SUMMARY OF THE INVENTION The present invention has been made in view of the above, and an object thereof is to provide a

The manufacturing method of the solar cell and the manufacturing apparatus of the solar cell, which are capable of accurately identifying the occurrence of structural defects in a short period of time, and reliably removing and repairing the specific structural defects, can be performed. In order to solve the above problems, the present invention provides a method of manufacturing a solar cell as follows. That is, the manufacturing method of the solar cell according to the first aspect of the present invention forms a photoelectric conversion body including a plurality of dividing elements, and the dividing elements adjacent to each other are electrically connected to each other; the photoelectric conversion body is specified The above-mentioned dividing element including the structural defect (the defect-dividing step is based on the resistance value obtained by measuring the resistance value of the plurality of elements before the mutual adjacent to each other) And capturing, by the image capturing unit, the narrowed-down region in which the structural defect exists, and correctly identifying the position of the structural defect from the obtained image, thereby defining the structural defect in the dividing element The part (defective part specific step); in the part where the above-mentioned structural defect exists, Zhaoshe Xuesuben (remediation step). ',, (4) the light "cutting structure defect 139429.doc 201005977 in the invention" The manufacturing method of the solar cell, when there is a part where the defect is specified (the defect site is specified) The measurement of the resistance value is preferably carried out at least two stages or more, and the resistance value is measured and a four-probe type resistance measuring device is used. Further, the present invention provides the following solar cell manufacturing apparatus. That is, the solar cell manufacturing apparatus according to the second aspect of the present invention is characterized in that the solar cell has a photoelectric conversion body including a plurality of division elements; and includes: an electric P test, which is used in the photoelectric conversion body In the dicing element including the structural defect, there is a region where the structural defect exists, and the resistance values at the complex portion are measured between the mutually adjacent dividing members; the image capturing portion is configured to detect the existence of the above-mentioned contracted limit and has a structural defect In the region, the position of the structural defect is correctly specified; and the repairing portion is configured to irradiate the structural defect with the laser beam to remove the structural defect. According to the method of manufacturing the solar cell according to the first aspect of the present invention, initially In a specific step of defect division, a solar cell including a dividing element having a structural defect is screened. Then, only the selected one is defective. The solar cell is sent to the defect site for a specific step. In the specific step of the defect portion, the location where the defect exists is correctly specified. Thereby, the solar cell without structural defects can be efficiently manufactured. Moreover, in the specific step of the defect portion, the adjacent portion is determined. The distribution of the resistance values between the divided elements is a region where the structural defects are present in the longitudinal direction of the dividing element. Thereafter, the narrowed region is imaged by the image capturing portion, and can be accurately specified with the stitch point. There is a structural defect in the dividing element. 139429.doc 201005977 The method of producing a brother-defective method is to take a large area of the object to be inspected =:: a lot of time. In contrast, in the present invention As a eve of the eve, the method of performing the camera in the case of a large area is limited to a small area that is pre-shrinked by a knife with a short time measurable value. The camera of the area. Therefore, this quickly and accurately identifies the location of the structural defect in a very short time. By this, in the repair step, only the minimum area containing the defect can be removed.

It can be used as a solar cell without significantly reducing the characteristics and repairing defects without damaging the appearance. Further, in the solar cell manufacturing apparatus according to the second aspect of the present invention, the electric resistance measuring unit that measures the resistance value of the plurality of elements between the dividing elements in order to specify the position of the structural defect, and the photographing by the The image capturing unit in the small-area region in which the resistance measuring unit is limited can specify the position of the defect in the dividing element correctly and in a short time. Further, in the repairing step, only the region containing the minimum defect can be removed, so that the characteristics of the solar cell can be not greatly reduced, and the defect can be repaired without damaging the appearance. [Embodiment] Hereinafter, a method for manufacturing a solar cell according to the present invention and a manufacturing apparatus for a solar cell of the present invention used in the present invention will be described in detail based on the drawings. Further, the present embodiment is specifically described in order to better understand the object of the invention, and the present invention is not limited unless otherwise specified. Fig. 1 is an enlarged perspective view showing an example of a main part of an amorphous germanium type solar cell manufactured by the method for producing a solar cell of the present invention. JL, 139429.doc 201005977 Fig. 2(a) is a cross-sectional view showing the layer structure of the solar cell. Fig. 2(b) is an enlarged cross-sectional view showing a portion enlarged by the symbol B of Fig. 2(a). The solar cell 1 has a photoelectric conversion body 12 formed on a first surface 11a (-surface) of a transparent insulating substrate. The substrate u may be formed of an insulating material which is excellent in penetration of sunlight and has durability, such as glass or a transparent resin. Sunlight is incident on the second surface lib (the other surface) of the substrate 11. In the photoelectric conversion body 12, a first electrode layer (lower P electrode) 13, a semiconductor layer 14, and a second electrode layer (upper electrode) i5 ^first electrode layer (lower electrode) 13 are laminated in this order from the substrate 11. A transparent conductive material such as a light-transmitting metal oxide such as TC 〇 or ITO (IndiUm Tin Oxide) may be used. Further, the second electrode layer (upper electrode) 15 may be formed of a conductive metal film such as Ag or Cu. The semiconductor layer 14 has a pin bonding structure, for example, as shown in FIG. 2(b), and is formed between the P-type amorphous lithium film 17 and the n-type amorphous germanium film 18, and is formed by sandwiching the bismuth-type amorphous germanium film 16. . Then, when sunlight is incident on the semiconductor layer 14, electrons and holes are generated. Due to the potential difference between the P-type amorphous germanium film 17 and the n-type amorphous stone film 18, the electrons and the holes move actively, due to continuous This is repeated to generate a potential difference (photoelectric conversion) between the first electrode layer 13 and the second electrode layer 15. The photoelectric conversion body 12 is divided into a plurality of division elements 21, 21, ... which are elongated in shape by a scribe line 19. The dividing elements 21, 21·. are electrically divided from each other, and are electrically connected in series to each other in the mutually adjacent dividing elements 2丨. Thereby, the photoelectric conversion body 12 has a structure in which the division elements 21, 21, ... are electrically connected in series. In this configuration, a high potential difference current can be taken out. The dicing line 19 is formed by, for example, forming a 139429.doc •10-201005977 photoelectric conversion body 12 uniformly on the first surface na of the substrate ,, and forming a groove at a specific interval in the photoelectric conversion body 12 by using a laser beam or the like. form. Further, a protective layer (not shown) containing an insulating resin or the like is formed on the second electrode layer (upper electrode) 15 constituting the photoelectric conversion body 12. A method of manufacturing a solar cell configured to be used in the manufacture of a solar cell. Fig. 3 is a flow chart showing the method of manufacturing the φ of the first embodiment of the solar cell of the present invention in stages. Among them, the steps from the detection of the structural defect to the repair are specifically described in detail. First, as shown in Fig. 1, a photoelectric conversion body 12 is formed on the first surface Ua of the transparent substrate (step of forming a photoelectric conversion body: P1). The structure of the photoelectric conversion body 12 is, for example, a structure in which a first electrode layer (lower electrode) 13, a semiconductor layer 14, and a second electrode layer (upper electrode) 15 are laminated in this order from the first surface 11 & Just fine. In the step of forming such a photoelectric conversion body 12, as shown in FIG. 4(a), there is a structural defect A1 generated by mixing impurities (contamination) of the semiconductor layer 14 or the like, or a fine needle is generated in the semiconductor layer 14. The case where the hole is structurally defective A2 or the like. Such structural defects Al, A2 partially short-circuit (leakage) between the first electrode layer 13 and the second electrode layer 15 to lower the power generation efficiency. Then, the photoelectric conversion body 12 is irradiated with, for example, a laser beam or the like to form a scribe line 19, and a plurality of division elements 21 of a strip shape are divided, (step of forming the division element: P2). In the step of forming such a cutting line 19, as shown in FIG. 4(a), the gold 139429.doc 201005977 constituting the second electrode layer 15 is melted and flows down to the cutting due to the deviation of the laser irradiation position and the like. In the groove of the line 19, a failure such as a structural defect A3 is generated. Such a structural defect A3 causes a local short circuit (leakage) between the first electrode layer 13 and the second electrode layer 15 to lower the power generation efficiency. The solar cell 10 formed in the above steps specifies the divisional element of the structural defect represented by the above A1 to A3, 21 (defective area specific step: P3). In the specific step of the defect division, specific methods for specifying the division elements 21, 21, etc. in which the construction defects are present include, for example, measurement of resistance value, measurement of FF (fill factor), and the like. When the division element having the structural defect is specified by the measurement of the resistance value, as shown in FIG. 5, a plurality of measurement points are set along the longitudinal direction L of the elongated division element 21, and are adjacent to each other. The elements 2, 2 and 1 are each measured for a resistance value, and a division element 21 s (defect division element) having a structural defect is specified from the distribution of the measured values. Fig. 6 shows an example of measuring the resistance values of the mutually adjacent division elements in, for example, a solar cell including 12 division elements. According to the measurement results shown in Fig. 6, when the resistance values of the 35th dividing element and the second dividing element are compared, the resistance value of the 35th dividing element is remarkably lowered. That is, it is predicted that there is a structural defect in the 35th division element that causes a short circuit. Similarly, it is predicted that there are structural defects in the 1G9 division elements. In the case where such a missing step is a specific step, when a component having a structural defect is specified by a resistance value, several methods are used as the measuring method. For example, if the measuring device is arranged with a plurality of probes arranged at a specific interval along the length direction B of the dividing member 2, the movement of the dividing elements is completed by moving under the 138429.doc 12 201005977 of the secondary probe. > + i Method of cutting eight m records' or scanning the probe along the longitudinal direction L of the divided 7G member 21, and repeating the method of measuring the probe up and down at the characteristic measurement point. The defect in the specific step of the defect is also determined by the following method: Method: applying a bias voltage of a specific value; performing 2 sets of 2 probes which double as the current value /, 疋Probe-based method; or probe for bias current applied to the value of the shirt, and for the determination of (iv) values

A 4-probe method comprising two sets of four probes was carried out with different needles. The resistance value is calculated from the voltage value and the current value. In addition to the method specified by the measurement of the resistance value, for example, the solar cell illuminates the illumination light of a specific amount of light, and the T1(1)丨丨fact〇r is performed one by one for each of the divided components: The measurement of the curve factor) may be a method of comparing the values of FFs of mutually adjacent divided elements. In this case, the component of the value of (4) is divided into components with structural defects. After the specific steps are divided as described above, it is found that the solar cell system of the 7C piece having the structural defect is sent to the defect step specific step of the second description, and the solar cell system in which the component having the structural defect is not found is directly used as the good product. The product is formed by the formation of the protective layer P6 or the like. The solar cell in which the structural defect is found in the specific step of the above-described defect division is further sent to the step of defining the portion having the structural defect in the dividing element (defect site specific step: P4). The specific step at the defect site is first limited to the presence of the defect step in the previous step. 139429.doc •13- 201005977 The component with structural defects is measured along the length of the dividing element.

The resistance value between the adjacent dividing element 21 and the adjacent element. The measurement interval (measurement density) of the longitudinal direction L = resistance value at this time is measured more finely than the measurement interval of the resistance value of the specific step of the defect division in the previous step, and the resistance value is measured. For example, as shown in Fig. 7(a), in the entire length direction L of the division element = 21s in which the structural defect rule is present, the measurement interval τι (measurement density) is specified for each of the adjacent division elements 21 The resistance value is measured between. By the measurement of the resistance value, the approximate position of the structural defect R is specified in the longitudinal direction L of the dividing element 21s. The measurement interval T1 is, for example, about 2 mm in spring. For example, Fig. 8 shows a long strip-shaped dividing element having a length of 14 mm in the longitudinal direction L (there is one defect), and an example of the resistance value between the adjacent dividing elements is measured. According to the measurement result shown in Fig. 8, the resistance value is lowered when the distance from one end of the divided member approaches 250 mm. In the case where there is a structural defect causing a short circuit, the closer to the existence position of the defect, the more the resistance value gradually decreases. Therefore, the resistance value is measured at a specific interval in the longitudinal direction l of the dividing element 21s, and if the change in the resistance value is observed, the approximate position of the structural defect ruler can be known in the dividing element 21s. As described above, after the approximate position of the structural defect R is specified in the longitudinal direction L of the dividing element 21s, it is preferable to further narrow the region/domain in which the structural defect R exists, that is, as described above in the longitudinal direction L of the dividing element 21s, After the approximate position of the weeping defect ruler, it is preferable to further measure the interval T2 between the distances of 100 mm before and after the position, and to measure the interval T1, and measure 139429.doc -14-201005977 The resistance value between the two (refer to Fig. 7 (10) 1 is set to, for example, about 2 mm, and the precision is 10 times more precise than the step of specifying the above-mentioned specific position, and there is a region where the structural defect R exists. The resistance value in a specific step of such a defect portion may also be any one of the following methods: a method of applying a bias voltage of a specific value; and a 2-probe type using a m2 probe which also serves as an electrical value measurement Method; or a method of applying a bias current of a specific value and a probe for measuring the value of the voltage to perform a 4-probe method comprising two sets of four probes, voltage value and current The value is calculated as the resistance value. In addition, in the defect portion step of the present embodiment, the measurement interval of the impedance value is changed in two stages, and the position including the defect is specified, and the measurement interval is changed in three steps or more, more finely. In the narrowing-cutting component, there is a region where the structural defect R exists. On the other hand, in the specific step (ρ4) of the defect portion, the probe unit U as shown in FIG. 10(a) may be used. A plurality of probes are formed at intervals T2 along the longitudinal direction L' of the dividing element A. First, initially, a wide measurement is made _ 'intermittently, only a bias voltage is applied to the probe )1' to specify a structural defect R The approximate location. Next, as shown in FIG. 10(b), in the section where the structural defect r is considered to exist, that is, between the probes that give the bias current (voltage), the probe X2 in the region where the resistance value is the lowest is applied. Grinding current (voltage). In this case, since the measurement interval τ2 of the probe which is narrower at the beginning of the first wide interval is measured, the position of the structural defect r in the division element is more accurately specified. 139429.doc 15 201005977 Thus, 1 history, / The α is divided into the length direction L of the element 21S, and the 卩 interval 72 closely aligns the probe unit U, and the probe of the wire bias current (electricity) is adapted to the length of the probe. L moves, and only selects the giggling eucalyptus needle that supplies the bias current to quickly detect the position of the structural defect R. Further, as another detection method, a method of changing the interval between the terminals to be measured may be employed in the measurement. For example, in the case of using the devices shown in Figures (4) and (9), the resistance value is measured by setting the terminal interval to a large extent, and the resistance value is lower than the value of the resistance value when the detection (4) is lower than the threshold value. In the case of 'narrowing the terminal spacing, measuring each terminal in the measurement of each terminal, if the resistance value is higher than the threshold value, or returning to the normal value, return to the original (four) interval to measure . As another detection method, the method of determining the complex threshold and changing the measurement interval of the terminal at each threshold may be employed. For example, the threshold value A, B, C (A > B > C) of the resistance value is determined in advance. When the resistance value is in the case of the A value of the threshold value A or more, the measurement is performed by vacating the terminal spacing of 1 〇. When the threshold value A _ = is obtained, the measurement is performed by vacating 5 terminals, and when the threshold value B or lower is reached. When the terminal is vacant, the measurement is performed when the threshold value is equal to or less than C. When the resistance value is increased, the measurement interval is increased every time the threshold value is exceeded. In the case of a defect, since the value gradually changes (refer to Fig. 8), the defect position can be detected quickly and correctly by changing the detection interval for each threshold. Further, in the above-described detection methods, it has been described that a device having a plurality of terminals of 139429.doc • 16-201005977 as shown in Fig. 1 is used to change the interval of the terminals used for measurement. In the case where one side of the mobile terminal is measured, it is also possible to change the measurement interval or the moving speed for each threshold. In the method of measuring the resistance values of the adjacent divided elements, the longitudinal direction L of the dividing element 21s can be limited to the existence of the structural defect r. However, it is difficult to diverge in the width direction of the dividing element 21s. Construct the location of the defect R. Therefore, the image capturing unit captures a region Z having a structural defect R in the narrowing range by the measurement of the resistance φ value (refer to Fig. 9 (4)). As the image pickup unit, for example, a CCD camera 24 is used, and a high-magnification lens is combined. Then, based on the image of the region z in which the structural defect r is photographed by the CCD camera 24, the position of the dividing element (1) in the region z in the width direction W where the structural defect R exists is correctly specified. Further, as a method of judging the position of the structural defect R from an image taken as in 2, a visual judgment by a person is made by comparing the image data of the divided meta-parameter of the object to be inspected by using a computer, and the pre-photographing is not performed. The defect is determined by dividing the image data of the component. _ and #接分分% of the resistance values of each other,; 11 knives 21S length direction L specifies the existence of structural defects R Ζ = advance: step by image camera (ccd phase This can be used to capture the position of the component (1) with the k-defect R. In the specific method of the defect, in the case of the case, it will cost the pole (4) π 4 to be broken. In contrast to this, in the present embodiment, 139429.doc 201005977 is a defect-specific method' limited to a small area that is pre-shrinked by a distribution of resistance values that can be shortened in a short time. Therefore, it is possible to quickly specify the position of the structural defect R in a very short time. b When the component 21s is divided, the position of the structural defect is correctly specified by the pin point, and then the structural defect of the solar cell is repaired. R (repair step: Μ). In the repair step, the laser is irradiated from the laser device 25 within a minimum range by measuring the resistance value and imaging the image and specifying the defect R specified by the pin point. Ray ray Q (refer to Figure 9(b)). Then, only The semiconductor layer or electrode in which the portion having the structural defect R exists is removed (refer to FIGS. 9(c) and 4(b)). Thus, by minimizing the defect to the structure specified by the pin point Irradiation of the laser beam Q within the range can remove only the minimum range E1 to E3 including the structural defect rule. The deterioration of the photoelectric conversion characteristics due to the repair can be minimized, and the appearance of the repair mark is almost The structural defect R can be removed without being conspicuous. That is, from FIG. 4 (each of the w-deficiencies Ai to A3 shown in the figure is removed as shown by the symbols E1 to ^ in FIG. 4(b). The defect-specific step (p3), the defect-specific step (P4), and the repairing step (P5), specifically, remove the structural defects existing in the dividing element of the solar cell. The solar cell system with the structural defect removed is sent to the protective layer Forming step (P6) and performing the subsequent step processing. Right according to the manufacturing method of the solar cell of the present invention, the solar cell of the dividing element containing the structural defect is initially screened in the specific step of defect division. Then ' The selected solar cell containing the structural defect is sent to 139429.doc -18·201005977 to the defect site specific step. In the specific step of the defect site, the specific value of the defect is determined by the measurement of the resistance value and the image of the region of the defect The existence of the structural defect is obtained. Thereby, the solar cell without structural defects can be efficiently manufactured. The manufacturing device of the solar cell of the present month is as follows: the electric resistance measuring portion is used for FIG. 7 In (a), (b), and the specific step of the defect portion shown in (4), the position of the narrowing structure is missing, and the dividing element 21

The resistance value of the complex part of each other; and the image capturing unit (the ccd camera has two sentences): only the region Z in which the structural defect R exists by the resistance measuring unit is captured. The resistance measuring unit is composed of 2 probes right. A four-probe type resistance measuring device and a moving device that relatively move the dividing element 21 and the probe in the longitudinal direction L. Further, as the image capturing unit, for example, an optical machine or a CCD camera Then, in the repairing step shown in Fig. 9 (4) to (4), the position of the structural defect R is specified by the image capturing unit in the positive direction. Moreover, the f-ray ray is irradiated as the structural defect R of the specific U. In the repairing section, use the laser, and set the repairing section to include a laser that allows the laser to be irradiated to the scanning mechanism or a mobile station that mounts the solar cell of the object to be repaired and moves it horizontally. The present invention relates to a method for manufacturing a solar cell. The method and apparatus for manufacturing a solar cell suppress damage to a light conversion body to correctly identify the occurrence of a structural defect. Definitely remove and repair specific Structural defects 139429.doc •19· 201005977 [Simple description of the diagram] Figure 1 shows an enlarged stereoscopic example of an essential part of an amorphous germanium solar cell. ·圃, Figure 2(a), (b) FIG. 3 is a flow chart showing an example of a method for manufacturing a solar cell of the present invention; FIG. 4 is a flow chart showing a method for manufacturing a solar cell of the present invention; and FIG. 4(a) and FIG. FIG. 5 is an explanatory view showing the state of the specific step of the defect division; FIG. 6 is a diagram showing the defect classification. The measurement example of the resistance value in the tool step is shown in Fig. 7(a), ( b) indicates the location of the defective portion. The description of the condition of the specific step is shown in Fig. 8. The measurement of the resistance value in the step of the defect portion is shown in Fig. 9 (a) to (c) * Description of the figure; and the steps of the heart and the steps of the repair - the illustration of the figure shows the specific steps of the defect - the description of the example [the main component symbol description]

10 solar cell 11 substrate 12 photoelectric conversion body 13 first electrode 14 semiconductor layer 15 second electrode 139429.doc "20. 201005977 19 21 25 cutting line dividing element laser device

139429.doc -21-

Claims (1)

201005977 VII. Patent application scope: 1. A method for manufacturing a solar cell, characterized in that: a photoelectric conversion body is formed, the photoelectric conversion body includes a plurality of dividing elements, and the dividing elements adjacent to each other are electrically connected to each other; The photoelectric conversion body includes the above-mentioned dividing element having a structural defect; and the resistance value distribution obtained by measuring the resistance value of the complex portion between the mutually adjacent divided element elements, and the area where the structural defect is described in the dividing element And capturing, by the image capturing unit, the narrowed-down region in which the structural defect exists, and correctly identifying the position of the structural defect from the obtained image, thereby defining the structural defect in the dividing element a portion; the portion of the structural defect is present, and the laser beam is irradiated to remove the structural defect. 2. The method for producing a solar cell according to claim 1, wherein the portion where the structural defect is present is defined, and the measured density of the resistance value is changed at least two stages to be measured. 3. The method of manufacturing a solar cell according to claim 1 or 2, wherein the portion where the structural defect is present is limited, and the resistance value is measured by using a 4-probe type resistance measuring device. A solar cell manufacturing apparatus, comprising: a photoelectric conversion device including a plurality of division elements; and a resistance measuring unit for dividing a component including a structural defect in the photoelectric conversion body a region of 139429.doc 201005977 having a structural defect, and a resistance value at a plurality of mutually adjacent dividing elements; and an image capturing portion that captures a region in which the structural defect is present in the shrinkage limit, A position where the structural defect is correctly identified; and a repairing portion that irradiates the aforementioned structural defect with the laser beam to remove the structural defect. 139429.doc