JP2021082624A - Semiconductor and method for manufacturing the same - Google Patents

Semiconductor and method for manufacturing the same Download PDF

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JP2021082624A
JP2021082624A JP2019206069A JP2019206069A JP2021082624A JP 2021082624 A JP2021082624 A JP 2021082624A JP 2019206069 A JP2019206069 A JP 2019206069A JP 2019206069 A JP2019206069 A JP 2019206069A JP 2021082624 A JP2021082624 A JP 2021082624A
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resin
recess
lead terminal
lead
semiconductor device
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JP7425581B2 (en
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亮輔 田中
Ryosuke Tanaka
亮輔 田中
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New Japan Radio Co Ltd
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  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

To provide a semiconductor device and a method for manufacturing the same, in which both the front and back surfaces of the lead terminals can be used as a mounting surface without causing appearance defects.SOLUTION: The configuration with a recess 11 on a lead terminal 2 of a semiconductor device 20 prevents resin leakage by securely clamping the lead terminal at a position away from the cavity of the sealing mold, even if wrinkles occur in the release film during resin sealing.SELECTED DRAWING: Figure 2

Description

本発明は、半導体装置およびその製造方法に関し、特に樹脂封止部からリード端子が露出する半導体装置及びその製造方法に関する。 The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device in which lead terminals are exposed from a resin sealing portion and a method for manufacturing the same.

近年、携帯電話、スマートフォン、タブレット等の通信機器等の小型化だけでなく、センサ搭載数の増加等で車載電子機器の小型化も進んでいる。特に車載電子機器では、高い実装信頼性を維持しながら、所定空間に搭載できる部品を作る必要があり、ショートリードを具備した半導体装置が使用される。 In recent years, not only the miniaturization of communication devices such as mobile phones, smartphones and tablets, but also the miniaturization of in-vehicle electronic devices has been progressing due to an increase in the number of sensors installed. In particular, in an in-vehicle electronic device, it is necessary to manufacture a component that can be mounted in a predetermined space while maintaining high mounting reliability, and a semiconductor device provided with a short lead is used.

図６及び図７に、従来の半導体装置２０Ａの一例を示す。図において、１はダイパッド、２はリード端子、３は半導体素子、４は半導体素子３とリード端子２を接続する金属ワイヤ、５は樹脂封止部、６はリード端子間樹脂部である。この種の半導体装置では、リード端子２の一部が樹脂封止部５の側面から水平方向に突出、露出し、リード端子２間にはリード端子間樹脂部６が形成されている。 6 and 7 show an example of the conventional semiconductor device 20A. In the figure, 1 is a die pad, 2 is a lead terminal, 3 is a semiconductor element, 4 is a metal wire connecting the semiconductor element 3 and the lead terminal 2, 5 is a resin sealing portion, and 6 is a resin portion between lead terminals. In this type of semiconductor device, a part of the lead terminal 2 protrudes and is exposed in the horizontal direction from the side surface of the resin sealing portion 5, and a resin portion 6 between the lead terminals is formed between the lead terminals 2.

この種の半導体装置２０Ａを製造する場合、まず半導体素子３をリードフレームのダイパッド１上に実装し、リード端子２と半導体素子３の電極を金属ワイヤ４で接続する。その後図８に示すように、封止用金型となる上金型７ａに形成されたキャビティ８内に半導体素子３とこの半導体素子３の電極と金属ワイヤ４で接続されたリード端子２の一端とを配置し、離型フィルム９を介して、上金型７ａと下金型７ｂとでリード端子２をクランプする。その後、キャビティ内に封止樹脂を注入して樹脂封止部５を形成するとともに、リード端子２間に封止樹脂を注入してリード端子間樹脂部６を形成する。その後、リードフレームおよび樹脂封止部等を切断することで個片化し、図６および図７に示す半導体装置２０Ａを形成することができる。 When manufacturing this type of semiconductor device 20A, first, the semiconductor element 3 is mounted on the die pad 1 of the lead frame, and the lead terminal 2 and the electrodes of the semiconductor element 3 are connected by a metal wire 4. After that, as shown in FIG. 8, one end of the semiconductor element 3 and the electrode of the semiconductor element 3 and the lead terminal 2 connected by the metal wire 4 in the cavity 8 formed in the upper mold 7a serving as the sealing mold. And are arranged, and the lead terminal 2 is clamped by the upper mold 7a and the lower mold 7b via the release film 9. After that, the sealing resin is injected into the cavity to form the resin sealing portion 5, and the sealing resin is injected between the lead terminals 2 to form the resin portion 6 between the lead terminals. After that, the lead frame, the resin sealing portion, and the like can be cut into individual pieces to form the semiconductor device 20A shown in FIGS. 6 and 7.

ここで離型フィルム９は、上金型７ａの表面に樹脂が付着することを防ぐために用いられている。この離型フィルム９は、上金型７ａと下金型７ｂとでリード端子２をクランプする際、変形してリード端子２間にわずかに入り込む。その結果、図７に示すようにリード端子間樹脂部６の表面がリード端子２の表面より低くなっている。この種の半導体装置の製造方法は特許文献１に記載されている。 Here, the release film 9 is used to prevent the resin from adhering to the surface of the upper mold 7a. When the lead terminal 2 is clamped by the upper mold 7a and the lower mold 7b, the release film 9 is deformed and slightly enters between the lead terminals 2. As a result, as shown in FIG. 7, the surface of the resin portion 6 between the lead terminals is lower than the surface of the lead terminals 2. A method for manufacturing this type of semiconductor device is described in Patent Document 1.

特開２００５−２１９２１０号公報Japanese Unexamined Patent Publication No. 2005-219210

従来のこの種の半導体装置の製造方法では、離型フィルム９を介して上金型７ａと下金型７ｂとでリード端子２をクランプする際、キャビティ８の端部からリード端子２上に折り曲げられる部分で離型フィルムにシワが発生する問題が知られている。このシワがリード端子２上に広がるように発生したまま樹脂を注入してしまうと、このシワの中に樹脂が入り込みリード端子２上に樹脂が流れ出る、いわゆる樹脂漏れが生じてしまう。樹脂漏れが生じた半導体装置２０Ｂを図９に示す。このように樹脂漏れ部１０のある半導体装置２０Ｂは、外観不良となる。また樹脂漏れが生じたリード端子の表面は実装基板等への実装面とすることができず、実装構造の自由度が低下してしまうという問題があった。本発明はこのような問題点を解消し、外観不良を発生させることなく、リード端子の表面および裏面のいずれも実装面として使用することができる半導体装置とその製造方法を提供することを目的とする。 In the conventional manufacturing method of this type of semiconductor device, when the lead terminal 2 is clamped by the upper mold 7a and the lower mold 7b via the release film 9, the lead terminal 2 is bent from the end of the cavity 8 onto the lead terminal 2. It is known that the release film is wrinkled at the part where it is formed. If the resin is injected while the wrinkles are generated so as to spread on the lead terminal 2, the resin enters the wrinkles and the resin flows out on the lead terminal 2, so-called resin leakage occurs. FIG. 9 shows a semiconductor device 20B in which a resin leak has occurred. As described above, the semiconductor device 20B having the resin leakage portion 10 has a poor appearance. Further, the surface of the lead terminal in which the resin leaks occurs cannot be used as a mounting surface on a mounting board or the like, and there is a problem that the degree of freedom of the mounting structure is reduced. An object of the present invention is to solve such a problem and to provide a semiconductor device and a method for manufacturing the same, which can be used as a mounting surface on both the front surface and the back surface of a lead terminal without causing an appearance defect. To do.

上記目的を達成するため、本願請求項１に係る半導体装置は、半導体素子とリード端子の一端とが樹脂により封止された半導体装置において、前記リード端子は、それぞれ表面の一部に凹部を備え、該凹部の一部は、前記半導体素子と前記リード端子の一端とを封止する第１の樹脂部で充填され、該第１の樹脂部から延出する前記リード端子の前記凹部は、前記第１の樹脂部に連続する第２の樹脂部で充填され、前記第１の樹脂部から延出する前記リード端子間は、前記第２の樹脂部に連続する第３の樹脂部で充填され、前記第２の樹脂部および前記第３の樹脂部の表面の高さは、前記凹部が形成されたリードフレームの表面より低く、前記凹部の底面より高いことを特徴とする。 In order to achieve the above object, the semiconductor device according to claim 1 of the present application is a semiconductor device in which a semiconductor element and one end of a lead terminal are sealed with a resin, and each of the lead terminals is provided with a recess on a part of the surface thereof. A part of the recess is filled with a first resin portion that seals the semiconductor element and one end of the lead terminal, and the recess of the lead terminal extending from the first resin portion is the recess. The first resin portion is filled with a second resin portion continuous, and the lead terminals extending from the first resin portion are filled with a third resin portion continuous with the second resin portion. The height of the surfaces of the second resin portion and the third resin portion is lower than the surface of the lead frame in which the recess is formed and higher than the bottom surface of the recess.

本願請求項２に係る半導体装置の製造方法は、半導体素子とリード端子の一端とが樹脂により封止された半導体装置の製造方法において、前記半導体素子と前記リード端子の一端とを前記樹脂により封止する際、封止用の金型のキャビティ内に前記半導体素子と前記リード端子の一端と前記リード端子の表面に形成された凹部の一部とを配置し、離型フィルムを介して前記リード端子を前記金型でクランプし、前記キャビティ内に前記樹脂を注入して前記半導体素子と前記リード端子の一端と前記凹部の一部を封止する第１の樹脂部を形成するとともに、前記第１の樹脂部から露出する前記リード端子の前記凹部と前記リード端子間に前記樹脂を注入して、前記凹部が形成されたリードフレームの表面より低く、前記凹部の底面より高い、前記凹部を充填する第２の樹脂部と前記リード端子間を充填する第３の樹脂部とを形成することを特徴とする。 The method for manufacturing a semiconductor device according to claim 2 of the present application is a method for manufacturing a semiconductor device in which one end of a semiconductor element and a lead terminal is sealed with a resin, and the semiconductor element and one end of the lead terminal are sealed with the resin. When stopping, the semiconductor element, one end of the lead terminal, and a part of the recess formed on the surface of the lead terminal are arranged in the cavity of the sealing mold, and the lead is passed through the release film. The terminal is clamped by the mold, and the resin is injected into the cavity to form a first resin portion that seals the semiconductor element, one end of the lead terminal, and a part of the recess, and the first resin portion is formed. The resin is injected between the recess of the lead terminal exposed from the resin portion of 1 and the lead terminal to fill the recess, which is lower than the surface of the lead frame on which the recess is formed and higher than the bottom surface of the recess. It is characterized in that a second resin portion to be formed and a third resin portion for filling the space between the lead terminals are formed.

本発明によれば、離型フィルムが封止用の金型でクランプされる際にシワが発生した場合でも、リード端子の凹部に離型フィルムが入り込むため、第２の樹脂部を超えてリード端子に樹脂漏れが生じることはない。その結果、半導体装置の外観不良を発生させることはなく、またリード端子の両面を実装基板等への実装面として使用することができ、実装構造の自由度が増すという利点がある。 According to the present invention, even if wrinkles occur when the release film is clamped by the sealing mold, the release film enters the recess of the lead terminal, so that the lead film goes beyond the second resin portion. There is no resin leakage at the terminals. As a result, there is an advantage that the appearance of the semiconductor device is not deteriorated, both sides of the lead terminal can be used as a mounting surface on a mounting board or the like, and the degree of freedom of the mounting structure is increased.

本発明の実施例の半導体装置の説明図である。It is explanatory drawing of the semiconductor device of the Example of this invention. 本発明の実施例の半導体装置の説明図である。It is explanatory drawing of the semiconductor device of the Example of this invention. 本発明の実施例の半導体装置の製造方法に使用するリードフレームの説明図である。It is explanatory drawing of the lead frame used in the manufacturing method of the semiconductor device of the Example of this invention. 本発明の実施例の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the semiconductor device of the Example of this invention. 本発明の実施例の半導体装置の製造方法を説明する図である、It is a figure explaining the manufacturing method of the semiconductor device of the Example of this invention. 従来の半導体装置の説明図である。It is explanatory drawing of the conventional semiconductor device. 従来の半導体装置の説明図である。It is explanatory drawing of the conventional semiconductor device. 従来の半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the conventional semiconductor device. 従来の半導体装置の外観不良の説明図である。It is explanatory drawing of appearance defect of the conventional semiconductor device.

本発明の半導体装置およびその製造方法では、半導体装置のリード端子上に凹部を備える構成とすることで、樹脂封止の際、離型フィルムにシワが発生した場合であっても、封止用金型のキャビティから離れた位置でリード端子を確実にクランプすることで樹脂漏れの発生を防止している。以下、本発明の実施例について詳細に説明する。 In the semiconductor device and the manufacturing method thereof of the present invention, by providing a recess on the lead terminal of the semiconductor device, even if the release film is wrinkled during resin sealing, it can be used for sealing. Resin leakage is prevented by securely clamping the lead terminal at a position away from the mold cavity. Hereinafter, examples of the present invention will be described in detail.

本発明の実施例について説明する。図１および図２は、本実施例の半導体装置２０の説明図である。図において１はダイパッド、２はリード端子、３は半導体装置、４は半導体素子３とリード端子２を接続する金属ワイヤ、５は樹脂封止部（第１の樹脂部に相当）、６はリード端子間樹脂部（第３の樹脂部に相当）、１１は凹部、１２は凹部樹脂部（第２の樹脂部に相当）である。 Examples of the present invention will be described. 1 and 2 are explanatory views of the semiconductor device 20 of this embodiment. In the figure, 1 is a die pad, 2 is a lead terminal, 3 is a semiconductor device, 4 is a metal wire connecting the semiconductor element 3 and the lead terminal 2, 5 is a resin sealing portion (corresponding to the first resin portion), and 6 is a lead. The terminal-to-terminal resin portion (corresponding to the third resin portion), 11 is a recess, and 12 is a recessed resin portion (corresponding to the second resin portion).

本実施例の半導体装置２０は、従来の半導体装置２０Ａと比較して凹部１１と凹部樹脂部１２を備えている点で相違している。図２に示すように、凹部１１は、一部を樹脂封止部５で充填され、樹脂封止部５から延出するリード端子２に形成された凹部１１は、樹脂封止部５に連続する薄い樹脂からなる凹部樹脂部１２で充填されていることがわかる。 The semiconductor device 20 of this embodiment is different from the conventional semiconductor device 20A in that it includes a recess 11 and a recess resin portion 12. As shown in FIG. 2, the recess 11 is partially filled with the resin sealing portion 5, and the recess 11 formed in the lead terminal 2 extending from the resin sealing portion 5 is continuous with the resin sealing portion 5. It can be seen that the recessed resin portion 12 made of a thin resin is filled.

この凹部樹脂部１２は、図１に示すようにリード端子２間に充填されたリード端子間樹脂部６にも連続し、リード端子２の表面より低い高さとなっている。 As shown in FIG. 1, the recessed resin portion 12 is continuous with the lead terminal resin portion 6 filled between the lead terminals 2 and has a height lower than the surface of the lead terminals 2.

次に本実施例の半導体装置２０の製造方法について説明する。図３は本実施例で使用するリードフレーム３０の一部を示しており、ダイパッド１を挟んで左右に４本ずつリード端子２が配置された半導体装置形成領域がマトリックス状に複数配置している。本実施例では、リード端子２の一部に凹部１１を形成している点が、通常の半導体装置の製造方法に使用されるリードフレームと相違している。 Next, a method of manufacturing the semiconductor device 20 of this embodiment will be described. FIG. 3 shows a part of the lead frame 30 used in this embodiment, and a plurality of semiconductor device forming regions in which four lead terminals 2 are arranged on the left and right sides of the die pad 1 are arranged in a matrix. .. In this embodiment, a recess 11 is formed in a part of the lead terminal 2, which is different from the lead frame used in a normal method for manufacturing a semiconductor device.

図３に示すリードフレーム３０を用いて半導体装置２０を形成する場合、まず半導体素子３をリードフレームのダイパッド１上に実装し、リード端子２と半導体装置の電極を金属ワイヤ４で接続する。 When forming the semiconductor device 20 using the lead frame 30 shown in FIG. 3, first, the semiconductor element 3 is mounted on the die pad 1 of the lead frame, and the lead terminal 2 and the electrode of the semiconductor device are connected by the metal wire 4.

その後図４に示すように、封止用の金型となる上金型７ａに形成されたキャビティ８内に半導体素子３とこの半導体素子３の電極と金属ワイヤ４で接続するリード端子２の一端とを配置し、離型フィルム９を介して、上金型７ａと下金型７ｂとでリード端子２をクランプする。このとき図４に示すように、上金型７ａのキャビティ８側の端部が凹部１１上に配置し、凹部１１の一部がキャビティ内に配置されるようにする。また凹部１１の一部がリード端子２をクランプする上金型７ａ上に配置するようにする。なお、図４は、１個の半導体装置の形成領域の断面図を示している。 After that, as shown in FIG. 4, one end of the lead terminal 2 connecting the semiconductor element 3 and the electrode of the semiconductor element 3 with the metal wire 4 in the cavity 8 formed in the upper mold 7a serving as the sealing mold. And are arranged, and the lead terminal 2 is clamped by the upper mold 7a and the lower mold 7b via the release film 9. At this time, as shown in FIG. 4, the end portion of the upper mold 7a on the cavity 8 side is arranged on the recess 11, and a part of the recess 11 is arranged in the cavity. Further, a part of the recess 11 is arranged on the upper mold 7a that clamps the lead terminal 2. Note that FIG. 4 shows a cross-sectional view of a formation region of one semiconductor device.

このように配置することで、離型フィルム９が折り曲げられることによって生じるシワは凹部１１内に入り込み、上金型７ａとリード端子２とが接合する部分はシワのない部分となり、確実にクランプすることが可能となる。なお、凹部１１の幅は、離型フィルム９の厚さやシワが形成される領域等を考慮して設定し、凹部１１の深さは、離型フィルム９が十分に入り込み、凹部樹脂部１２が形成される深さに設定すればよい。 By arranging in this way, the wrinkles generated by bending the release film 9 enter into the recess 11, and the portion where the upper mold 7a and the lead terminal 2 are joined becomes a wrinkle-free portion and is securely clamped. It becomes possible. The width of the recess 11 is set in consideration of the thickness of the release film 9, the region where wrinkles are formed, and the like, and the depth of the recess 11 is such that the release film 9 sufficiently penetrates and the recess resin portion 12 is formed. It may be set to the formed depth.

その後、キャビティ８内に封止樹脂を注入して樹脂封止部５を形成するとともに、凹部１１内に封止樹脂を注入して凹部樹脂部１２とリード端子２間に封止樹脂を注入してリード端子間樹脂部６を形成する。図５は、図４に示すキャビティ８が図面上下方向に一体となって形成されており、さらに図面左右方向に列状に形成されている封止用金型を用いて、樹脂封止部５を列状に形成した例を示している。このように樹脂封止部５が列状に配置するように構成すると、図４で説明した上金型７ａのキャビティ８側の端部が図５の図面上下方向であって、図面左右方向に列状に配置されるため、同様に配置されている凹部１１内にシワが形成された離型フィルム９を入り込ませることができ、また各リード端子を確実にクランプすることができ、樹脂漏れの発生を防止することが可能となる。 After that, the sealing resin is injected into the cavity 8 to form the resin sealing portion 5, and the sealing resin is injected into the recess 11 to inject the sealing resin between the recess resin portion 12 and the lead terminal 2. The resin portion 6 between the lead terminals is formed. In FIG. 5, the resin sealing portion 5 is formed by using a sealing mold in which the cavities 8 shown in FIG. 4 are integrally formed in the vertical direction of the drawing and further formed in rows in the horizontal direction of the drawing. Is shown as an example in which the above are formed in a row. When the resin sealing portions 5 are arranged in a row in this way, the end portion of the upper mold 7a described in FIG. 4 on the cavity 8 side is in the vertical direction of the drawing of FIG. Since they are arranged in a row, the release film 9 having wrinkles can be inserted into the recesses 11 which are similarly arranged, and each lead terminal can be reliably clamped to prevent resin leakage. It is possible to prevent the occurrence.

その後、所定の位置で格子状に切断して個片化することで、図１および図２に示す半導体装置を形成することができる。 After that, the semiconductor device shown in FIGS. 1 and 2 can be formed by cutting the semiconductor device into pieces at predetermined positions in a grid pattern.

本実施例の製造方法により形成される半導体装置２０は、凹部１１内およびリード端子２間に離型フィルム９が入り込むことが必須のため、リード端子間樹脂部６と凹部樹脂部１２の表面の高さは、リード端子２の表面より低くなる。そのため凹部１１の深さを浅く設定してしまうと、凹部樹脂部１２が薄くなり、樹脂封止部５やリード端子間樹脂部６と分離してしまう場合もある。このような分離が生じると凹部樹脂部１２の剥離により新たな外観不良を招いてしまう。そこで凹部樹脂部１２は、樹脂封止部５とリード端子間樹脂部６と連続する形状となるように形成する必要がある。 In the semiconductor device 20 formed by the manufacturing method of this embodiment, since it is essential that the release film 9 is inserted in the recess 11 and between the lead terminals 2, the surface of the resin portion 6 between the lead terminals and the surface of the recess resin portion 12 The height is lower than the surface of the lead terminal 2. Therefore, if the depth of the recess 11 is set to be shallow, the recess resin portion 12 may become thin and may be separated from the resin sealing portion 5 and the resin portion 6 between the lead terminals. When such separation occurs, the recessed resin portion 12 is peeled off, resulting in a new appearance defect. Therefore, the recessed resin portion 12 needs to be formed so as to have a shape continuous with the resin sealing portion 5 and the resin portion 6 between the lead terminals.

以上本発明の実施例について説明したが、本発明は上記実施例に限定されるものでないことは言うまでもない。例えば、上記実施例では、リード端子の一方の面のみに樹脂封止部が形成された半導体装置を例にとり説明したが、これに限定されずリード端子の両面に樹脂封止部を形成する半導体装置としてもよい。その場合、リード端子２の両面に凹部１１を形成してもリード端子２の強度を保つことができる程度の厚さとする等工夫すればよい。 Although the examples of the present invention have been described above, it goes without saying that the present invention is not limited to the above examples. For example, in the above embodiment, a semiconductor device in which a resin sealing portion is formed on only one surface of the lead terminal has been described as an example, but the present invention is not limited to this, and a semiconductor in which resin sealing portions are formed on both sides of the lead terminal is described. It may be a device. In that case, the thickness may be adjusted so that the strength of the lead terminal 2 can be maintained even if the recesses 11 are formed on both sides of the lead terminal 2.

また上記実施例のようなリード端子の一方の面のみに封止樹脂が形成される半導体装置では、リード端子やダイパッドの裏面側をエッチングしてリード端子等の一部を樹脂封止部内に配置する場合もあり、本実施例においても同様にリード端子やダイパッドの一部を樹脂封止部内に配置する構成としても何ら問題ない。 Further, in a semiconductor device in which a sealing resin is formed only on one surface of a lead terminal as in the above embodiment, the back side of the lead terminal or die pad is etched and a part of the lead terminal or the like is arranged in the resin sealing portion. In this embodiment as well, there is no problem even if a part of the lead terminal and the die pad is arranged in the resin sealing portion.

１： ダイパッド、２：リード端子、３：半導体素子、４：金属ワイヤ、５：樹脂封止部、６：リード端子間樹脂部、７ａ：上金型、７ｂ：下金型、８：キャビティ、９：離型フィルム、１０：樹脂漏れ部、１１：凹部、１２凹部樹脂部、２０、２０Ａ、２０Ｂ：半導体装置、３０：リードフレーム 1: Die pad, 2: Lead terminal, 3: Semiconductor element, 4: Metal wire, 5: Resin sealing part, 6: Resin part between lead terminals, 7a: Upper mold, 7b: Lower mold, 8: Cavity, 9: Release film, 10: Resin leak part, 11: Recessed part, 12 recessed resin part, 20, 20A, 20B: Semiconductor device, 30: Lead frame

Claims (2)

半導体素子とリード端子の一端とが樹脂により封止された半導体装置において、
前記リード端子は、それぞれ表面の一部に凹部を備え、
該凹部の一部は、前記半導体素子と前記リード端子の一端とを封止する第１の樹脂部で充填され、該第１の樹脂部から延出する前記リード端子の前記凹部は、前記第１の樹脂部に連続する第２の樹脂部で充填され、前記第１の樹脂部から延出する前記リード端子間は、前記第２の樹脂部に連続する第３の樹脂部で充填され、
前記第２の樹脂部および前記第３の樹脂部の表面の高さは、前記凹部が形成されたリードフレームの表面より低く、前記凹部の底面より高いことを特徴とする半導体装置。 In a semiconductor device in which a semiconductor element and one end of a lead terminal are sealed with resin,
Each of the lead terminals has a recess on a part of the surface thereof.
A part of the recess is filled with a first resin portion that seals the semiconductor element and one end of the lead terminal, and the recess of the lead terminal extending from the first resin portion is the first. The lead terminals extending from the first resin portion are filled with a second resin portion continuous with the resin portion 1, and the lead terminals extending from the first resin portion are filled with a third resin portion continuous with the second resin portion.
A semiconductor device characterized in that the heights of the surfaces of the second resin portion and the third resin portion are lower than the surface of the lead frame in which the recess is formed and higher than the bottom surface of the recess. 半導体素子とリード端子の一端とが樹脂により封止された半導体装置の製造方法において、
前記半導体素子と前記リード端子の一端とを前記樹脂により封止する際、
封止用の金型のキャビティ内に前記半導体素子と前記リード端子の一端と前記リード端子の表面に形成された凹部の一部とを配置し、離型フィルムを介して前記リード端子を前記金型でクランプし、
前記キャビティ内に前記樹脂を注入して前記半導体素子と前記リード端子の一端と前記凹部の一部を封止する第１の樹脂部を形成するとともに、前記第１の樹脂部から露出する前記リード端子の前記凹部と前記リード端子間に前記樹脂を注入して、前記凹部が形成されたリードフレームの表面より低く、前記凹部の底面より高い、前記凹部を充填する第２の樹脂部と前記リード端子間を充填する第３の樹脂部とを形成することを特徴とする半導体装置の製造方法。 In a method for manufacturing a semiconductor device in which a semiconductor element and one end of a lead terminal are sealed with a resin,
When sealing the semiconductor element and one end of the lead terminal with the resin,
The semiconductor element, one end of the lead terminal, and a part of the recess formed on the surface of the lead terminal are arranged in the cavity of the mold for sealing, and the lead terminal is attached to the mold via a release film. Clamp with a mold and
The resin is injected into the cavity to form a first resin portion that seals the semiconductor element, one end of the lead terminal, and a part of the recess, and the lead exposed from the first resin portion. A second resin portion and the lead for filling the recess, which are lower than the surface of the lead frame on which the recess is formed and higher than the bottom surface of the recess by injecting the resin between the recess of the terminal and the lead terminal. A method for manufacturing a semiconductor device, which comprises forming a third resin portion that fills between terminals.
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