JP2021077753A - Dicing tape and dicing die bond film - Google Patents

Abstract

To provide a dicing tape, etc. capable of relatively suppressing chip lifting after the calf maintenance process.SOLUTION: The dicing tape according to the present invention is a dicing tape where an adhesive layer is stacked on a base material layer, the base material layer is composed of a resin film with a single structure or a laminated structure, the base material layer has a thermal shrinkage of 20% or less in the MD direction at 100°C, and the bending hardness, determined as the product of the elastic modulus of the base material layer and the cross-sectional secondary moment of the base material layer measured at 25°C using a nano-indenter, is 40*Nmm2 or less.SELECTED DRAWING: Figure 1

Description

The present invention relates to a dicing tape and a dicing die bond film.

Conventionally, it is known that a dicing tape or a dicing die bond film is used in order to obtain a semiconductor chip for die bonding in the manufacture of a semiconductor device.
The dicing tape is configured by laminating an adhesive layer on a base material layer, and the dicing die bond film is configured by laminating a die bond layer on the adhesive layer of the dicing tape so as to be peelable.

Then, as a method of obtaining a semiconductor chip (die) for die bonding using the dicing die bond film, a half-cut step of forming a groove in the semiconductor wafer so as to process the semiconductor wafer into a chip (die) by a cutting process and a half The back grind process of grinding the semiconductor wafer after the cutting process to reduce the thickness, and one surface of the semiconductor wafer after the back grind process (for example, the surface opposite to the circuit surface) are attached to the die bond layer for dying. Between the mounting process of fixing the semiconductor wafer on the tape, the expanding process of widening the distance between the half-cut semiconductor chips, the calf maintenance process of maintaining the distance between the semiconductor chips, and the die bond layer and the pressure-sensitive adhesive layer. A method having a pickup step of taking out a semiconductor chip in a state where it is peeled off and a die bond layer is attached, and a die bond step of adhering the semiconductor chip in a state where the die bond layer is attached to an adherend (for example, a mounting substrate). Is known to adopt.
In the calf maintenance step, hot air (for example, 100 to 130 ° C.) is applied to the dicing tape to heat-shrink the dicing tape (after heat shrinking), and then the dicing tape is cooled and solidified to be cooled and solidified, and the adjacent semiconductors are cut. The distance between chips (calf) is maintained.
Further, in the expanding step, the die bond layer is divided into a size corresponding to the size of a plurality of semiconductor chips that have been individualized.

By the way, after the calf maintenance step, the outer peripheral edge portion of the semiconductor chip with the die bond layer may be lifted from the surface of the pressure-sensitive adhesive layer (chip floating may occur).

In order to suppress such chip floating, for example, Patent Document 1 describes that a dicing tape having specific physical properties is used.
Specifically, the stress relaxation rate 1000 seconds after stretching by 30% under the temperature condition of 23 ° C. in at least one direction is 45% or more, and 30% under the temperature condition of 23 ° C. in at least one direction. It is described that a dicing tape having a stress value of 4 MPa or less 1000 seconds after stretching is used.

Japanese Unexamined Patent Publication No. 2019-16633

However, it cannot be said that sufficient studies have been made on the suppression of chip floating after the calf maintenance step.

Therefore, an object of the present invention is to provide a dicing tape and a dicing die bond film capable of relatively suppressing chip floating after a calf maintenance step.

As a result of diligent studies by the present inventors, in a base material layer made of a resin film having a single structure or a laminated structure, the heat shrinkage rate in the MD direction at 100 ° C. is set to a predetermined value or less, and a nanoindenter is used. By setting the flexural rigidity obtained as the product of the elastic modulus of the base material layer and the moment of inertia of area of the base material layer measured at 25 ° C. using the above to a predetermined value or less, the chip floats after the calf maintenance step. The present invention has been conceived by finding that the above can be relatively suppressed.

That is, the dicing tape according to the present invention is
A dicing tape in which an adhesive layer is laminated on a base material layer.
The base material layer is composed of a resin film having a single structure or a laminated structure.
The base material layer has a heat shrinkage rate of 20% or less in the MD direction at 100 ° C., and the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the cross section of the base material layer 2. The flexural rigidity required as the product of the next moment is 40 N · mm ² or less.

According to such a configuration, since the base material layer has a heat shrinkage rate in the MD direction at 100 ° C. of 20% or less, the heat shrinkage of the base material layer in the calf maintenance step can be made relatively small. Therefore, even if a drag force in the direction away from the semiconductor chip is generated in the base material layer in the expanding step, the drag force remaining in the base material layer after heat shrinkage can be made relatively small. As a result, it is possible to relatively prevent the outer peripheral edge portion of the semiconductor chip from floating from the pressure-sensitive adhesive layer.
^{Further, the base material layer has a flexural rigidity of 40 N · mm 2} or less, which is obtained as the product of the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer. Therefore, in the expanding step, the base material layer is relatively easily bent and deformed. That is, even when the outer peripheral edge portion of the semiconductor chip is displaced in the rising direction, the base material layer is relatively easy to follow the displacement.
As a result, the tip floating after the calf maintenance step can be relatively suppressed.

In the dicing tape,
The base material layer preferably has an elastic recovery rate of 75% or less when measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the pressure-sensitive adhesive layer is laminated.

According to such a configuration, the base material layer has an elastic recovery rate of 75% or less when measured at 25 ° C. using a nanoindenter with respect to the surface layer portion on the side where the pressure-sensitive adhesive layer is laminated. Even if a drag force in the direction away from the semiconductor chip is generated in the base material layer in the expanding step, the drag force remaining in the base material layer after heat shrinkage can be further reduced. As a result, it is possible to further prevent the outer peripheral edge portion of the semiconductor chip from floating from the pressure-sensitive adhesive layer.
As a result, the tip floating after the calf maintenance step can be further suppressed.

In the dicing tape,
The hardness of the base material layer is preferably 40 MPa or less when measured at 25 ° C. using a nanon denter with respect to the surface layer portion on the side where the pressure-sensitive adhesive layer is laminated.

According to such a configuration, the hardness of the surface layer portion on the side where the pressure-sensitive adhesive layer is laminated is 40 MPa or less when measured at 25 ° C. using a nanoindenter, and thus the expanding step. Even if a drag force in the direction away from the semiconductor chip is generated in the base material layer, the drag force remaining in the base material layer after heat shrinkage can be further reduced. As a result, it is possible to further prevent the outer peripheral edge portion of the semiconductor chip from floating from the pressure-sensitive adhesive layer.
As a result, the tip floating after the calf maintenance step can be further suppressed.

The dicing die bond film according to the present invention is
A dicing tape in which an adhesive layer is laminated on a base material layer,
A die bond layer laminated on the adhesive layer of the dicing tape is provided.
The base material layer is composed of a resin film having a single structure or a laminated structure.
The base material layer has a heat shrinkage rate of 20% or less in the MD direction at 100 ° C., and the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the cross section of the base material layer 2. The flexural rigidity required as the product of the next moment is 40 N · mm ² or less.

According to such a configuration, even if a drag force in the direction away from the semiconductor chip is generated in the base material layer in the expanding step, the drag force remaining in the base material layer after heat shrinkage can be made relatively small, and In the expanding step, the base material layer can be made relatively easily elastically deformed.
As a result, the tip floating after the calf maintenance step can be relatively suppressed.

According to the present invention, it is possible to provide a dicing tape and a dicing die bond film capable of relatively suppressing chip floating after a calf maintenance step.

The cross-sectional view which shows the structure of the dicing tape which concerns on one Embodiment of this invention. The cross-sectional view which shows the structure of the dicing die bond film which concerns on one Embodiment of this invention. The cross-sectional view which shows the state of the half-cut processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the half-cut processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the back grind processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the back grind processing in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the mounting process in the manufacturing method of a semiconductor integrated circuit schematically. FIG. 5 is a cross-sectional view schematically showing a state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit. FIG. 5 is a cross-sectional view schematically showing a state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit. FIG. 5 is a cross-sectional view schematically showing a state of an expanding process at a low temperature in a method for manufacturing a semiconductor integrated circuit. The cross-sectional view which shows the state of the expanding process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the expanding process at room temperature in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the calf maintenance process in the manufacturing method of a semiconductor integrated circuit schematically. The cross-sectional view which shows the state of the pickup process in the manufacturing method of a semiconductor integrated circuit schematically.

Hereinafter, an embodiment of the present invention will be described.

[Dicing tape]
As shown in FIG. 1, the dicing tape 10 according to the present embodiment is a dicing tape in which the pressure-sensitive adhesive layer 2 is laminated on the base material layer 1.
In the dicing tape 10 according to the present embodiment, the base material layer 1 is made of a resin film having a single structure or a laminated structure.
In the dicing tape 10 according to the present embodiment, the base material layer 1 has a heat shrinkage rate of 20% or less in the MD direction (resin flow direction) at 100 ° C.
In the dicing tape 10 according to the present embodiment, the base material layer 1 is obtained as the product of the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer 1. The flexural rigidity to be obtained is 40 N · mm ² or less. Bending stiffness is preferably at 30 N · mm ² or less, more preferably 20 N · mm ² or less.

In the present specification, the heat shrinkage rate of the base material layer 1 in the MD direction at 100 ° C. refers to the base material layer 1 cut out to a predetermined dimension (width 20 mm, length 120 mm) so that the MD direction is the length direction. It is used as a test piece, and means the shrinkage rate after the test piece is exposed to an environment at a temperature of 100 ° C. for 60 seconds.
The heat shrinkage rate in the MD direction can be determined according to the following procedure.
(1) Mark the test pieces 10 mm from both ends in the length direction before heating.
_{(2) The distance L 0} (that is, the initial length in the MD direction) between the markings of the test piece before heating is measured.
(3) The test piece is exposed to an environment at a temperature of 100 ° C. for 60 seconds with the portion outside the marked portion (that is, the end side in the length direction) fixed with a clip.
(4) After cooling the test piece to room temperature (23 ± 2 ° C.), the length L ₁ is measured at the same location as in (2).
_{(5) The dimensional change rate RC} in the length direction (MD direction) of the test piece is calculated according to the following formula.

_RC = (L _0- L ₁ ) / L ₀ x 100

In the dicing tape 10 according to the present embodiment, the heat shrinkage rate in the MD direction (resin flow direction) at 100 ° C. is preferably 0.01% or more, more preferably 0.1% or more. It is more preferably 1% or more.
When the heat shrinkage rate is 1% or more, the distance between the semiconductor chips (that is, the calf) can be more sufficiently maintained after the semiconductor wafer is cut into the semiconductor chips.

The elastic modulus of the base material layer 1 used for calculating the bending hardness of the base material layer 1 can be obtained as follows.
Measuring device and measuring conditions / device: Tribo Indenter (manufactured by Hisiron Inc.)
・ Indenter used: Berkovich type diamond indenter (triangular pyramidal type)
・ Measurement method: Single push measurement ・ Measurement temperature: 25 ℃
・ Push-in depth setting: 200 nm
・ Measurement atmosphere: In air ・ Load (push) speed: 20 nm / s
・ Unloading (pulling) speed: 20 nm / s
After embedding the entire dicing tape (length l: 5 mm, width w: 5 mm, thickness t: 125 μm) using the measurement sample embedding resin, the embedded dicing tape is placed in the width direction using a microtome. A sample obtained by cutting out a cross section along the above (a cross section cut out) is used as a measurement sample.
As the embedding resin, for example, DEV-TUBE S-31 (manufactured by ITW PP & F Japan) can be used.
Measurement method (1) The measurement sample is held at 25 ° C. for 1 hour.
(2) The measurement sample is arranged so that the pushing direction of the Berkovich diamond indenter and the surface of the base material layer 1 of the measurement sample are orthogonal to each other.
(3) Made of Berkovich diamond After the tip of the indenter is brought into contact with the surface of the base material layer 1 of the measurement sample, it is made of Berkovich diamond from the surface of the base material layer 1 to a depth of 200 nm at a load speed of 20 nm / s. Push in the indenter.
(4) After pushing the Berkovich diamond indenter from the surface of the base material layer 1 to a depth of 200 nm, the Berkovich diamond indenter is returned to the position at the start of pushing at a unloading speed of 20 nm / s.
(5) Using the analysis software "Triboscan Ver. 9.2.12.0", each displacement of the base material layer 1 when the indenter is unloaded from the position where the indenter is most pushed in, and when each displacement is obtained. From the load applied to the base material layer 1 and the indentation area at each of the displacements theoretically calculated (the contact area between the indenter and the base material layer 1 at each displacement (contact projection area)). , Calculate the elastic modulus.
The above measurement is performed at three different locations of the base material layer 1, and the elastic modulus of the base material layer 1 is obtained by arithmetically averaging the elastic moduli calculated at the three locations.
When the base material layer 1 has a laminated structure, the elastic modulus is obtained for each layer.

Further, the moment of inertia of area I of the base material layer 1 can be calculated by using the following formula when the cross section of the base material layer 1 is rectangular.

^{I = w × h 3/12} ( although, w is the width of the dicing tape, h is the thickness of the substrate layer 1)

When the base material layer 1 has a laminated structure, the moment of inertia of area is calculated for each layer.

The flexural rigidity of the base material layer 1 can be obtained by calculating the product of the elastic modulus of the base material layer 1 and the moment of inertia of area of the base material layer 1.
When the base material layer 1 has a laminated structure, the product of the elastic modulus and the moment of inertia of area can be obtained for each layer, and the bending hardness can be obtained by adding them together.

The base material layer 1 has a two-layer structure composed of a first layer and a second layer laminated on one surface side of the first layer, and the pressure-sensitive adhesive layer 2 is on the other surface side of the first layer. The elastic modulus of the first layer measured at 25 ° C. using a nanoindenter is preferably 350 MPa or more and 800 MPa or less, and the second layer measured at 25 ° C. using a nanoindenter. The elastic modulus of the layer is preferably 10 MPa or more and 120 MPa or less.
Further, the base material layer 1 is laminated on the second layer which is the central layer and one surface side of the central layer, and is laminated on the other surface side of the central layer and the first layer on which the pressure-sensitive adhesive layer 2 is laminated. In the case of a three-layer structure composed of the third layer, the elastic modulus of the first layer and the third layer measured at 25 ° C. using a nanoindenter may be 350 MPa or more and 800 MPa or less. Preferably, the elastic modulus of the second layer measured at 25 ° C. using a nanoindenter is preferably 10 MPa or more and 200 MPa or less.

The bending hardness of the base material layer 1 ^{is preferably 3 N · mm 2} or more, and more preferably 10 N · mm ² or more. When the bending hardness is 3 N · mm ² or more, the individualized dicing tape can be smoothly peeled off from the long separator (for example, PET separator) in the product form.

The base layer 1 made of a resin film has a heat shrinkage rate of 20% or less in the MD direction at 100 ° C., and is based on the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter. Since the flexural rigidity required as the product of the moment of inertia of area of the material layer 1 is 40 N · mm ² or less, the chip floats after the calf maintenance step (the outer peripheral edge portion of the semiconductor chip floats from the adhesive layer 2). ) Can be relatively suppressed as follows.

In order to obtain a plurality of semiconductor chips from a semiconductor wafer using the dicing tape 10, generally, a half-cut step of forming a groove in the semiconductor wafer to process the semiconductor wafer into a chip (die) by a cutting process and a half-cut step The back grind step of grinding the semiconductor wafer afterwards to reduce the thickness and one surface of the semiconductor wafer after the back grind step (for example, the surface opposite to the circuit surface) are attached to the adhesive layer 2 of the dicing tape 10. Then, a mounting step of fixing the semiconductor wafer to the dicing tape 10, an expanding step of widening the distance between the half-cut semiconductor chips, a calf maintenance step of maintaining the distance between the semiconductor chips, and a semiconductor chip and an adhesive. A method including a pickup step of peeling between the layer 2 and taking out the semiconductor chip is often adopted.

Here, since a circuit is generally formed on the circuit surface of the semiconductor wafer by a photolithography method, the semiconductor wafer tends to warp toward the circuit surface side due to the circuit formation by this photolithography method.

Further, in the expanding step, as will be described later, a dicing tape 10 on which a grooved semiconductor wafer is fixed is pushed up by the pushing-up member in a downward direction (diagonally downward direction) by using an expanding device provided with a pushing-up member. Often stretched. In such a case, in the expanding step, a force that pushes the dicing tape 10 upward acts on the dicing tape 10.
Then, as a force that opposes the force (rushing force) that pushes the dicing tape 10 upward, a force in the direction opposite to the thrusting force, that is, a downward drag force is generated in the dicing tape 10.
On the other hand, when the dicing tape 10 is stretched while being pushed upward, a force (stretching force) in the direction in which the dicing tape 10 is stretched (diagonally downward) acts on the semiconductor wafer in which the groove is formed. As a force that opposes the stretching force acting on the dicing tape 10, a force in the direction opposite to the stretching force, that is, a force that is obliquely upward is generated in the semiconductor wafer in which the groove is formed.
Then, in the calf maintenance step, after the dicing tape 10 is cooled and solidified, the downward drag generated in the dicing tape 10 and the diagonally upward drag generated in the grooved semiconductor wafer are preserved. It is considered that these stored forces cause the outer peripheral edge of the cut semiconductor chip to float with respect to the dicing tape 10 after the calf maintenance step.
Further, since the thickness of the semiconductor wafer that is cut into semiconductor chips by stretching is relatively thin, about 0.055 mm, the cut semiconductor chips are generated in the dicing tape 10 that is stored after the dicing tape 10 is cooled and solidified. Since it is considered that the drag force and the drag force generated in the semiconductor wafer are easily affected, it is considered that the outer peripheral edge portion of the semiconductor chip is easily lifted from the pressure-sensitive adhesive layer 2 after the calf maintenance step.

However, in the dicing tape 10 according to the present embodiment, the heat shrinkage of the base material layer 1 in the MD direction at 100 ° C. is 20% or less, so that the heat shrinkage of the base material layer 1 in the calf maintenance step is relatively small. can do.
As described above, although the dicing tape 10 has a drag force after the calf maintenance step, if the heat shrinkage of the base material layer 1 is relatively small, it is possible to prevent the drag force remaining on the base material layer from increasing after the heat shrinkage. it can.
As a result, it is possible to prevent the outer peripheral edge portion of the semiconductor chip from being lifted from the pressure-sensitive adhesive layer 2 due to the drag force generated in the dicing tape 10.
Further, in the dicing tape 10 according to the present embodiment, since the bending hardness of the base material layer 1 is 40 N · mm ² or less, bending deformation is relatively easy in the expanding step. That is, even when the outer peripheral edge portion of the semiconductor chip is displaced in the rising direction, the base material layer 1 is relatively easy to follow the displacement.
From the above, it is considered that the chip floating after the calf maintenance step can be relatively suppressed.

Further, as will be described later, the thickness of the base material layer 1 of the dicing tape 10 is usually as thin as 55 μm or more and 195 μm or less.
Therefore, when trying to improve the characteristics of the base material layer 1 by physical properties, it is considered useful to examine the physical properties suitable for evaluation in a minute region.
Here, in the present invention, the physical property of bending hardness adopted for specifying the base material layer 1 is calculated by using the elastic modulus measured by a device called a nanoindenter, which is particularly suitable for measuring a minute region. is there.
That is, the bending hardness is considered to be particularly suitable as a physical property to be examined in order to improve the characteristics of the base material layer 1 of the dicing tape 10.
Further, when the base material layer 1 has a laminated structure, the bending hardness can be obtained for each layer by using the nano indenter. From this point as well, the bending hardness is a characteristic of the base material layer 1. It is considered that it is particularly suitable for evaluating.

In the dicing tape 10 according to the present embodiment, the base material layer 1 has an elastic recovery rate of 75% or less when measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the pressure-sensitive adhesive layer 2 is laminated. It is preferably 65% or less, and more preferably 65% or less.

In the dicing tape 10 according to the present embodiment, the base material layer 1 has an elastic recovery rate of 50% or more when measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the adhesive layer 2 is laminated. It is preferably 60% or more, and more preferably 60% or more.
When the elastic recovery rate when measured at 25 ° C. using a nanoindenter is 50% or more, appearance defects due to deformation of the base material layer 1 can be more sufficiently suppressed.

The measurement of the elastic modulus using the nanoindenter uses the same measuring device and measurement sample as those used for the measurement of the elastic modulus of the base material layer 1 described above, and the measurement conditions of the elastic modulus of the base material layer 1 described above. It can be carried out by adopting the same conditions as the above and using the analysis software "Triboscan Ver. 9.2.12.0" and adopting the same measurement method as the elastic modulus of the base material layer 1 described above.
If no load is applied to the base material layer 1 when unloading is started from the position where the indenter is pushed in most, the elastic recovery rate is 0%, and the base layer 1 is based until just before the indenter and the base material layer 1 do not come into contact with each other. If the material layer 1 is loaded, the elastic recovery rate is 100%.
That is, the elastic recovery rate can be obtained by examining to what position the load is not applied to the base material layer 1 based on the pushing start position.

In the dicing tape 10 according to the present embodiment, the substrate layer 1 has a hardness of 40 MPa or less when measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the pressure-sensitive adhesive layer 2 is laminated. Is preferable, and 35 MPa or less is more preferable.

In the dicing tape 10 according to the present embodiment, the base material layer 1 has a hardness of 20 MPa or more when measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the pressure-sensitive adhesive layer 2 is laminated. Is preferable, and 30 MPa or more is more preferable.
When the hardness measured at 25 ° C. using a nanoindenter is 20 MPa or more, the semiconductor wafer and the die bond layer can be cut more satisfactorily.

The measurement of hardness using the nano indenter is the same as the measurement condition of the elastic modulus of the base material layer 1 described above using the same measuring device and measurement sample as those used for the measurement of the elastic modulus of the base material layer 1 described above. Adopting the conditions, using the analysis software "Triboscan Ver. 9.2.12.0", the load applied to the base material layer 1 when the indenter is pushed the most, and theoretically when the indenter is pushed the most. The elastic modulus of the base material layer 1 described above, except that the hardness of the base material layer 1 is obtained from the calculated indentation area (contact area between the indenter and the base material layer 1 when the indenter is pushed most (contact projection area)). This can be done by adopting the same method as the rate measurement method.

The base material layer 1 supports the pressure-sensitive adhesive layer 2. The base material layer 1 is made of a resin film. Resins contained in the resin film include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, total aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylsulfide, and fluororesin. Examples thereof include cellulose-based resins and silicone resins.

Examples of the polyolefin include homopolymers of α-olefins, copolymers of two or more kinds of α-olefins, block polypropylene, random polypropylene, and the common weight of one kind or two or more kinds of α-olefins and other vinyl monomers. Coalescence and the like can be mentioned.

The α-olefin homopolymer is preferably an α-olefin homopolymer having 2 or more and 12 or less carbon atoms. Examples of such homopolymers include ethylene, propylene, 1-butene, 4-methyl-1-pentene and the like.

Examples of the copolymer of two or more kinds of α-olefins include an ethylene / propylene copolymer, an ethylene / 1-butene copolymer, an ethylene / propylene / 1-butene copolymer, and an ethylene / carbon number of 5 or more and 12 or less. Examples thereof include α-olefin copolymers, propylene / ethylene copolymers, propylene / 1-butene copolymers, and α-olefin copolymers having propylene / carbon number of 5 or more and 12 or less.

Examples of the copolymer of one or more kinds of α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA).

The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene / ethylene copolymer and a propylene homopolymer, or an α-olefin ternary copolymer having propylene / ethylene / carbon number 4 or more.
Examples of commercially available α-olefin-based thermoplastic elastomers include Vistamax 3980 (manufactured by ExxonMobil Chemical Co., Ltd.), which is a propylene-based elastomer resin.

The resin film may contain one kind of the above-mentioned resin, or may contain two or more kinds of the above-mentioned resins.
When the pressure-sensitive adhesive layer 2 contains an ultraviolet-curable pressure-sensitive adhesive, which will be described later, the resin film for producing the base material layer 1 is preferably configured to have ultraviolet transmission.

The base material layer 1 may have a single layer structure or a laminated structure. The base material layer 1 may be obtained by non-stretch molding or by stretch molding, but it is preferably obtained by stretch molding. When the base material layer 1 has a laminated structure, the base material layer 1 preferably has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomer (hereinafter referred to as a non-elastomer layer).
By having the base material layer 1 having an elastomer layer and a non-elastomer layer, the elastomer layer can function as a stress relaxation layer for relaxing tensile stress. That is, since the tensile stress generated in the base material layer 1 can be made relatively small, the base material layer 1 can be made relatively easy to stretch while having an appropriate hardness.
As a result, the splittability from the semiconductor wafer to the plurality of semiconductor chips can be improved.
In addition, it is possible to prevent the base material layer 1 from being torn and damaged during cutting in the expanding step.
In the present specification, the elastomer layer means a low elastic modulus layer having a lower tensile storage elastic modulus at room temperature than a non-elastomer layer. Examples of the elastomer layer include those having a tensile storage elastic modulus of 10 MPa or more and 200 MPa or less at room temperature, and examples of the non-elastomer layer include those having a tensile storage elastic modulus of 200 MPa or more and 500 MPa or less at room temperature.

The elastomer layer may contain one kind of elastomer or two or more kinds of elastomers, but may be an α-olefin-based thermoplastic elastomer or EVA (ethylene-vinyl acetate co-weight). It is preferable to include coalescence).
The non-elastomer layer may contain one type of non-elastomer or may contain two or more types of non-elastomer, but preferably contains metallocene PP, which will be described later.
When the base material layer 1 has an elastomer layer and a non-elastomer layer, the base material layer 1 has a three-layer structure (non-elastomer layer) in which the elastomer layer is the central layer and the non-elastomer layers are provided on both sides of the central layer facing each other. / Elastomer layer / Non-elastomer layer) is preferably formed.

Further, as described above, in the calf maintenance step, hot air (for example, 100 to 130 ° C.) is applied to the dicing die bond film maintained in the expanded state at room temperature (for example, 23 ° C.) to heat-shrink the dicing die bond film. After that, in order to cool and solidify, the outermost layer of the base material layer 1 preferably contains a resin having a melting point close to the temperature of the hot air applied to the dicing tape. As a result, the outermost layer melted by applying hot air can be solidified more quickly.
As a result, the calf can be more sufficiently maintained in the calf maintenance step.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomer layer, the elastomer layer contains an α-olefin thermoplastic elastomer, and the non-elastomer layer contains a polyolefin such as metallocene PP described later, the elastomer layer Contains 50% by mass or more and 100% by mass or less, and 70% by mass or more and 100% by mass or less of the α-olefin-based thermoplastic elastomer with respect to the total mass of the elastomer forming the elastomer layer. More preferably, it is more preferably 80% by mass or more and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and 95% by mass or more and 100% by mass or less is contained. Optimal. Since the α-olefin-based thermoplastic elastomer is contained in the above range, the affinity between the elastomer layer and the non-elastomer layer is increased, so that the base material layer 1 can be extruded relatively easily. Further, since the elastomer layer can act as a stress relaxation layer, the semiconductor wafer attached to the dicing tape can be efficiently cut.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomer layer, the base material layer 1 is coextruded by co-extruding the elastomer and the non-elastomer to form a laminated structure of the elastomer layer and the non-elastomer layer. It is preferable to obtain by. As the coextrusion molding, any suitable coextrusion molding generally performed in the production of films, sheets and the like can be adopted. Among the coextrusion moldings, it is preferable to adopt the inflation method or the coextrusion T-die method from the viewpoint that the base material layer 1 can be obtained efficiently and inexpensively.

When the base material layer 1 having a laminated structure is obtained by coextrusion molding, the elastomer layer and the non-elastomer layer are in contact with each other in a heated and melted state, so that the melting point difference between the elastomer and the non-elastomer is smaller. preferable. Since the small difference in melting points suppresses excessive heat from being applied to either the elastomer or the non-elastomer having a low melting point, either the elastomer or the non-elastomer having a low melting point is thermally deteriorated. By doing so, it is possible to suppress the production of by-products. Further, it is possible to suppress the occurrence of poor lamination between the elastomer layer and the non-elastomer layer due to an excessive decrease in the viscosity of either the elastomer or the non-elastomer having a low melting point. The melting point difference between the elastomer and the non-elastomer is preferably 0 ° C. or higher and 70 ° C. or lower, and more preferably 0 ° C. or higher and 55 ° C. or lower.
The melting points of the elastomer and the non-elastomer can be measured by differential scanning calorimetry (DSC) analysis. For example, by using a differential scanning calorimeter (manufactured by TA Instruments, model DSC Q2000), the temperature is raised to 200 ° C. at a heating rate of 5 ° C./min under a nitrogen gas stream, and the peak temperature of the endothermic peak is obtained. Can be measured.

The thickness of the base material layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, further preferably 55 μm or more and 170 μm or less, and most preferably 60 μm or more and 160 μm or less. Is. By setting the thickness of the base material layer 1 within the above range, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the dicing tape can be efficiently cut.
For the thickness of the base material layer 1, for example, using a dial gauge (manufactured by PEACOCK, model R-205), the thickness of any five randomly selected points is measured, and these thicknesses are arithmetically averaged. It can be obtained by.

In the base material layer 1 in which the elastomer layer and the non-elastomer layer are laminated, the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, preferably 1/25. It is more preferably 1 / 3.5 or less, further preferably 1/25 or more and 1/4, particularly preferably 1/22 or more and 1/4 or less, and 1/20 or more and 1/4. It is best to: By setting the ratio of the thickness of the non-elastomer layer to the thickness of the elastomer layer within the above range, the semiconductor wafer attached to the dicing tape can be cut more efficiently.

The elastomer layer may have a single layer (one layer) structure or a laminated structure. The elastomer layer preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and preferably a 1-layer structure. Is. When the elastomer layers have a laminated structure, all the layers may contain the same elastomer, or at least two layers may contain different elastomers.

The non-elastomer layer may have a single layer (one layer) structure or a laminated structure. The non-elastomer layer preferably has a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and preferably a 1-layer structure. Optimal. When the non-elastomer layer has a laminated structure, all the layers may contain the same non-elastomer, or at least two layers may contain different non-elastomers.

The non-elastomer layer preferably contains, as the non-elastomer, a polypropylene resin (hereinafter, referred to as metallocene PP) which is a polymer product produced by a metallocene catalyst. Examples of the metallocene PP include a propylene / α-olefin copolymer which is a polymer product of a metallocene catalyst. Since the non-elastomer layer contains metallocene PP, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the dicing tape can be efficiently cut.
Examples of commercially available metallocene PP include Wintech WFX4M (manufactured by Japan Polypropylene Corporation).

Here, the metallocene catalyst is a transition metal compound (so-called metallocene compound) of Group 4 of the periodic table containing a ligand having a cyclopentadienyl skeleton, and reacts with the metallocene compound to stabilize the metallocene compound. It is a catalyst consisting of a co-catalyst that can be activated into a state, and if necessary, contains an organoaluminum compound. The metallocene compound is a crosslinked metallocene compound that enables stereoregular polymerization of propylene.

Among the propylene / α-olefin copolymer which is a polymer product of the metallocene catalyst, the propylene / α-olefin random copolymer which is a polymer product of the metallocene catalyst is preferable, and propylene / α- which is a polymer product of the metallocene catalyst is preferable. Among the olefin random copolymers, a propylene / α-olefin random copolymer having 2 carbon atoms, which is a polymer product of a metallocene catalyst, and an α-olefin random copolymer having propylene / 4 carbon atoms, which is a polymer product of a metallocene catalyst, In addition, those selected from the propylene / α-olefin random copolymer having 5 carbon atoms, which is a polymer product of the metallocene catalyst, are preferable, and among these, the propylene / ethylene random copolymer which is a polymer product of the metallocene catalyst is preferable. Optimal.

The propylene / α-olefin random copolymer, which is a polymer of the metallocene catalyst, has a melting point of 80 from the viewpoint of coextrusion film formation with the elastomer layer and splittability of the semiconductor wafer attached to the dicing tape. ℃ or more and 140 ° C or less, particularly preferably 100 ° C or more and 130 ° C or less.
The melting point of the propylene / α-olefin random copolymer, which is a polymer of the metallocene catalyst, can be measured by the method described above.

Here, when the elastomer layer is arranged on the outermost layer of the base material layer 1, when the base material layer 1 is a roll body, the elastomer layers arranged on the outermost layer are likely to block each other (sticking to each other). It will be easier). Therefore, it becomes difficult to rewind the base material layer 1 from the roll body. On the other hand, in the preferred embodiment of the base material layer 1 having the laminated structure described above, the non-elastomer layer / elastomer layer / non-elastomer layer, that is, the non-elastomer layer is arranged on the outermost layer. The material layer 1 has excellent blocking resistance. As a result, it is possible to prevent the manufacturing of the semiconductor device using the dicing tape 10 from being delayed due to blocking.

The non-elastomer layer preferably contains a resin having a melting point of 100 ° C. or higher and 130 ° C. or lower and having a molecular weight dispersion degree (mass average molecular weight / number average molecular weight) of 5 or less. Examples of such a resin include metallocene PP.
Since the non-elastomer layer contains the resin as described above, the non-elastomer layer can be cooled and solidified more quickly in the calf maintenance step. Therefore, it is possible to more sufficiently suppress the shrinkage of the base material layer 1 after the dicing tape is heat-shrinked.
Thereby, the calf can be more sufficiently maintained in the calf maintenance step.

The resin film is made of the above-mentioned resin, and the thickness of the base material layer 1 is set to the above-mentioned thickness, so that the base material layer 1 has a heat shrinkage rate of 20% in the MD direction at 100 ° C. The flexural rigidity obtained as the product of the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer 1 is 40 N · mm ² or less. Can be.

The pressure-sensitive adhesive layer 2 contains a pressure-sensitive adhesive. The pressure-sensitive adhesive layer 2 is held by adhering a semiconductor wafer for individualization to a semiconductor chip.

Examples of the adhesive include those capable of reducing the adhesive force by an action from the outside in the process of using the dicing tape 10 (hereinafter, referred to as an adhesive reducing type adhesive).

When a pressure-reducing pressure-sensitive adhesive is used as the pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesive state) and a relatively low adhesive strength in the process of using the dicing tape 10. The state (hereinafter referred to as low adhesive state) can be used properly. For example, when the semiconductor wafer attached to the dicing tape 10 is subjected to cutting, it is possible to prevent a plurality of semiconductor chips separated by the cutting of the semiconductor wafer from floating or peeling from the pressure-sensitive adhesive layer 2. Therefore, the high adhesive state is used. On the other hand, in order to pick up a plurality of fragmented semiconductor chips after the semiconductor wafer is cut, a low adhesive state is used in order to facilitate picking up a plurality of semiconductor chips from the pressure-sensitive adhesive layer 2.

Examples of the adhesive-reducing adhesive include an adhesive that can be cured by irradiation in the process of using the dicing tape 10 (hereinafter referred to as a radiation-curable adhesive).

Examples of the radiation-curable pressure-sensitive adhesive include pressure-sensitive adhesives that are cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among these, it is preferable to use a pressure-sensitive adhesive (ultraviolet-curable pressure-sensitive adhesive) that is cured by ultraviolet irradiation.

The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer and a radiation-polymerizable monomer component or a radiation-polymerizable oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Additive-type radiation-curable pressure-sensitive adhesives can be mentioned.

Examples of the acrylic polymer include those containing a monomer unit derived from a (meth) acrylic acid ester. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester.

The pressure-sensitive adhesive layer 2 may contain an external cross-linking agent. As the external cross-linking agent, any one that can react with the acrylic polymer as the base polymer to form a cross-linked structure can be used. Examples of such an external cross-linking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based cross-linking agents.

Examples of the radiation-polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol monohydroxypenta (meth). ) Acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate and the like. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The content ratio of the radiation-polymerizable monomer component and the radiation-polymerizable oligomer component in the radiation-curable pressure-sensitive adhesive is selected within a range that appropriately reduces the stickiness of the pressure-sensitive adhesive layer 2.

The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketor compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphor. Examples thereof include quinone, halogenated ketone, acylphosphinoxide, and acylphosphonate.

The pressure-sensitive adhesive layer 2 may contain a cross-linking accelerator, a pressure-sensitive adhesive, an anti-aging agent, a pigment, a colorant such as a dye, or the like in addition to each of the above components.

The thickness of the pressure-sensitive adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and further preferably 5 μm or more and 25 μm or less.

[Dicing die bond film]
Next, the dicing die bond film 20 will be described with reference to FIG. In the description of the dicing die bond film 20, the description will not be repeated in the portion overlapping with the dicing tape 10.

As shown in FIG. 2, the dicing die bond film 20 according to the present embodiment is laminated on the dicing tape 10 in which the adhesive layer 2 is laminated on the base material layer 1 and on the adhesive layer 2 of the dicing tape 10. The die bond layer 3 is provided.
In the dicing die bond film 20, a semiconductor wafer is attached on the die bond layer 3.
In the cutting of the semiconductor wafer using the dicing die bond film 20, the die bond layer 3 is also cut together with the semiconductor wafer. The die bond layer 3 is divided into a size corresponding to the size of a plurality of semiconductor chips that have been individualized. As a result, a semiconductor chip with the die bond layer 3 can be obtained.
As described above, in the dicing tape 10 of the dicing die bond film 20, the base material layer 1 is made of a resin film having a single structure or a laminated structure, and the base material layer 1 of the dicing tape 10 has a temperature of 100 ° C. The thermal shrinkage in the MD direction is 20% or less, and is obtained as the product of the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer 1. The bending hardness is 40 N · mm ² or less.

In the dicing tape 10 of the dicing die bond film 20, the base material layer 1 preferably has a thermal shrinkage rate of 0.01% or more in the MD direction at 100 ° C., preferably 0.1% or more, as described above. Is more preferable, and 1% or more is more preferable, and the flexural rigidity obtained as the product of the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer 1 is obtained. The size is preferably 3 N · mm ² or more, and more preferably 10 N · mm ² or more.
Further, in the dicing tape 10 of the dicing die bond film 20, the base material layer 1 is measured at 25 ° C. using a nanoindenter for the surface layer portion on the side where the pressure-sensitive adhesive layer 2 is laminated, as described above. The elastic recovery rate is preferably 75% or less, and more preferably 65% or less. The elastic recovery rate is preferably 50% or more, and more preferably 60% or more.
Further, in the dicing tape 10 of the dicing die bond film 20, the base material layer 1 has the hardness of the surface on the side where the pressure-sensitive adhesive layer 2 is laminated, as described above, when measured at 25 ° C. using a nanoindenter. Is preferably 40 MPa or less, and more preferably 35 MPa or less. The hardness is preferably 20 MPa or more, and more preferably 30 MPa or more.

The die bond layer 3 preferably has thermosetting property. By including at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group in the die bond layer 3, the die bond layer 3 can be imparted with thermosetting property.

When the die bond layer 3 contains a thermosetting resin, examples of such a thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide. Examples include resin. Among these, it is preferable to use an epoxy resin.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type and orthocresol. Examples thereof include novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantin type, trisglycidyl isocyanurate type, and glycidylamine type epoxy resins.

Examples of the phenol resin as a curing agent for the epoxy resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene.

When the die bond layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include a thermosetting functional group-containing acrylic resin. Examples of the acrylic resin in the thermosetting functional group-containing acrylic resin include those containing a monomer unit derived from (meth) acrylic acid ester.
In the thermosetting resin having a thermosetting functional group, a curing agent is selected according to the type of the thermosetting functional group.

The die bond layer 3 may contain a thermosetting catalyst from the viewpoint of sufficiently advancing the curing reaction of the resin component and increasing the curing reaction rate. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogen borane compounds.

The die bond layer 3 may contain a thermoplastic resin. The thermoplastic resin functions as a binder. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. Examples thereof include thermoplastic polyimide resins, polyamide resins such as polyamide 6 and polyamides 6 and 6, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins. As the thermoplastic resin, only one kind may be used, or two or more kinds may be used in combination. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint that the connection reliability by the die bond layer can be easily ensured because the amount of ionic impurities is small and the heat resistance is high.

The acrylic resin is preferably a polymer containing a monomer unit derived from (meth) acrylic acid ester as the monomer unit having the largest mass ratio. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. The acrylic resin may contain monomer units derived from other components copolymerizable with the (meth) acrylic acid ester. Examples of the other components include functional groups such as a carboxy group-containing monomer, an acid anhydride monomer, a hydroxy group-containing monomer, a glycidyl group-containing monomer, a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, acrylamide, and acrylic nitrile. Examples thereof include monomers and various polyfunctional monomers. From the viewpoint of achieving high cohesiveness in the die bond layer, the acrylic resin is composed of a (meth) acrylic acid ester (particularly, a (meth) acrylic acid alkyl ester having an alkyl group having 4 or less carbon atoms) and a carboxy group-containing monomer. , And a copolymer of a nitrogen atom-containing monomer and a polyfunctional monomer (particularly, a polyglycidyl-based polyfunctional monomer). More preferably, it is a copolymer with polyglycidyl (meth) acrylate.

The die bond layer 3 may contain one or more other components, if necessary. Other components include, for example, flame retardants, silane coupling agents, and ion trapping agents.

The thickness of the die bond layer 3 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. Such a thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less.

The dicing die bond film 20 according to the present embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, specific examples of using the dicing die bond film 20 will be described.
Hereinafter, an example using the dicing die bond film 20 in which the base material layer 1 is one layer will be described.

The methods for manufacturing semiconductor integrated circuits are a half-cut process in which a groove is formed in the semiconductor wafer so that the semiconductor wafer is processed into a chip (die) by a cutting process, and a semiconductor wafer after the half-cut process is ground to reduce the thickness. A back grind process, a mounting process in which one surface of the semiconductor wafer after the back grind process (for example, a surface opposite to the circuit surface) is attached to the die bond layer 3 and the semiconductor wafer is fixed to the dicing tape 10, and a half. The die bond layer 3 was attached by peeling between the die bond layer 3 and the pressure-sensitive adhesive layer 2, the expanding step of widening the distance between the cut semiconductor chips, the calf maintenance step of maintaining the distance between the semiconductor chips, and the adhesive layer 2. It has a pickup step of taking out the semiconductor chip (die) in the state, and a die bond step of adhering the semiconductor chip (die) with the die bond layer 3 attached to the adherend. When carrying out these steps, the dicing tape (dicing die bond film) of the present embodiment is used as a manufacturing auxiliary tool.

In the half-cut step, as shown in FIGS. 3A and 3B, a half-cut process for cutting the semiconductor integrated circuit into small pieces (dies) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface (see FIG. 3A). Further, the dicing ring R is attached to the wafer processing tape T (see FIG. 3A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 3B). In the back grind process, as shown in FIGS. 3C and 3D, the semiconductor wafer is ground to reduce the thickness. Specifically, while the back grind tape G is attached to the surface on which the groove is formed, the wafer processing tape T attached first is peeled off (see FIG. 3C). With the back grind tape G attached, grinding is performed until the semiconductor wafer W has a predetermined thickness (see FIG. 3D).

In the mounting step, as shown in FIGS. 4A to 4B, the dicing ring R is attached to the adhesive layer 2 of the dicing tape 10, and then the half-cut semiconductor wafer W is attached to the surface of the exposed die bond layer 3. (See FIG. 4A). Then, the back grind tape G is peeled off from the semiconductor wafer W (see FIG. 4B).

In the expanding step, as shown in FIGS. 5A to 5C, the dicing ring R is fixed to the holder H of the expanding device. By pushing up the dicing die bond film 20 from below using the push-up member U provided in the expanding device, the dicing die bond film 20 is stretched so as to spread in the plane direction (see FIG. 5B). As a result, the semiconductor wafer W that has been half-cut is cut under a specific temperature condition. The above temperature conditions are, for example, -20 to 5 ° C, preferably -15 to 0 ° C, and more preferably -10 to -5 ° C. The expanded state is released by lowering the push-up member U (see FIG. 5C).
Further, in the expanding step, as shown in FIGS. 6A to 6B, the dicing tape 10 is stretched so as to increase the area under higher temperature conditions (for example, room temperature (23 ° C.)). As a result, the cut adjacent semiconductor chips are separated from each other in the plane direction of the film surface, and the distance is further increased.
In the expanding step, as described above, a drag force in the direction away from the semiconductor chip is generated in the base material layer 1.
Here, in the dicing tape 10 of the dicing die bond film 20 according to the present embodiment, the base material layer 1 has the elastic modulus of the base material layer 1 measured at 25 ° C. using a nanoindenter and the cross section of the base material layer 1. The flexural rigidity required as the product of the next moment is 40 N · mm ² or less. Therefore, in the expanding step, the base material layer 1 is relatively easily bent and deformed. That is, even when the outer peripheral edge portion of the semiconductor chip is displaced in the floating direction, the base material layer 1 is relatively easy to follow the displacement.

In the calf maintenance step, as shown in FIG. 7, hot air (for example, 100 to 130 ° C.) is applied to the dicing tape 10 to heat-shrink the dicing tape 10 and then cool and solidify the dicing tape 10 between adjacent semiconductor chips that have been cut. Maintain the distance (calf).
Here, in the dicing tape 10 of the dicing die bond film 20 according to the present embodiment, the base material layer 1 has a heat shrinkage rate of 20% or less in the MD direction at 100 ° C., so that the base material layer 1 in the calf maintenance step The heat shrinkage can be made relatively small. Therefore, as described above, even when the drag force in the direction away from the semiconductor chip is generated in the base material layer 1 in the expanding step, the drag force remaining in the base material layer after heat shrinkage can be made relatively small. As a result, it is possible to relatively prevent the outer peripheral edge portion of the semiconductor chip from floating from the pressure-sensitive adhesive layer 2.

In the pick-up step, as shown in FIG. 8, the semiconductor chip to which the die bond layer 3 is attached is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to push up the semiconductor chip to be picked up via the dicing tape 10. The pushed-up semiconductor chip is held by the suction jig J.

In the die-bonding step, the semiconductor chip to which the die-bonding layer 3 is attached is adhered to the adherend.
In the manufacture of the above-mentioned semiconductor integrated circuit, an example in which the dicing die bond film 20 is used as an auxiliary tool has been described, but even when the dicing tape 10 is used as an auxiliary tool, the semiconductor integrated circuit is manufactured in the same manner as described above. can do.

The dicing tape and the dicing die bond film according to the present invention are not limited to the above-described embodiment. Further, the dicing tape and the dicing die bond film according to the present invention are not limited by the above-mentioned effects. The dicing tape and the dicing die bond film according to the present invention can be variously modified without departing from the gist of the present invention.

Next, the present invention will be described in more detail with reference to examples. The following examples are for explaining the present invention in more detail, and do not limit the scope of the present invention.

[Example 1]
<Formation of base material layer>
Using a two-kind three-layer extrusion T-die molding machine, a three-layer structure of A layer / B layer / C layer (the B layer is the central layer, and the outer layers A and C are laminated on both sides of the B layer 3). A base material layer having a layer structure) was formed. Metallocene PP (trade name: Wintech WFX4M, manufactured by Japan Polypropylene Corporation) is used for the resin of the A layer and C layer, and EVA (trade name: Ultrasen (registered trademark) 626, manufactured by Tosoh Corporation) is used for the resin of the B layer. Was used.
The extrusion molding was performed at a die temperature of 190 ° C. That is, the A layer, the B layer, and the C layer were extruded at 190 ° C. The thickness of the base material layer obtained by extrusion molding was 80 μm. The thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was A layer: B layer: C layer = 1:10: 1.
After the molded base material layer was sufficiently solidified, the solidified base material layer was wound into a roll to form a roll body.
<Making dicing tape>
The pressure-sensitive adhesive composition was applied from the roll-shaped base material layer to one surface of the base material layer using an applicator so as to have a thickness of 10 μm. The base material layer after applying the pressure-sensitive adhesive composition was heated and dried at 110 ° C. for 3 minutes to form a pressure-sensitive adhesive layer, thereby obtaining a dicing tape.
The pressure-sensitive adhesive composition was prepared as follows.
First, 173 parts by mass of INA (isononyl acrylate), 54.5 parts by mass of HEA (hydroxyethyl acrylate), 0.46 parts by mass of AIBN (2,2'-azobisisobutyronitrile), and 372 parts by mass of ethyl acetate. The mixture was mixed to obtain a first resin composition.
Next, the first resin composition was added into the round-bottom separable flask (capacity 1 L), the thermometer, the nitrogen introduction tube, and the round-bottom separable flask of the experimental apparatus for polymerization equipped with a stirring blade. While stirring the first resin composition, the liquid temperature of the first resin composition was set to room temperature (23 ° C.), and the inside of the round bottom separable flask was replaced with nitrogen for 6 hours.
With nitrogen flowing into the round bottom separable flask, the liquid temperature of the first resin composition was maintained at 62 ° C. for 3 hours while stirring the first resin composition, and then at 75 ° C. After holding for 2 hours, the INA, the HEA, and the AIBN were polymerized to obtain a second resin composition. After that, the inflow of nitrogen into the round bottom separable flask was stopped.
After cooling the second resin composition until the liquid temperature reaches room temperature, 2-isosia sodium methacrylate (manufactured by Showa Denko Co., Ltd., as a compound having a polymerizable carbon-carbon double bond in the second resin composition is used. A third resin composition obtained by adding 52.5 parts by mass of trade name "Carens MOI (registered trademark)") and 0.26 parts by mass of dibutyltin dilaurate IV (manufactured by Wako Pure Chemical Industries, Ltd.) is added to an air atmosphere. Underneath, the mixture was stirred at a liquid temperature of 50 ° C. for 24 hours.
Next, in the third resin composition, 0.75 parts by mass and 2 parts by mass of coronate L (isocyanate compound) and Omnirad 127 (photopolymerization initiator) were added to 100 parts by mass of the polymer solid content, respectively, and then acetic acid. The pressure-sensitive adhesive composition was prepared by diluting the third resin composition with ethyl so that the solid content concentration was 20% by mass.
<Preparation of dicing die bond film>
100 parts by mass of acrylic resin (manufactured by Nagase ChemteX, trade name "SG-P3", glass transition temperature 12 ° C), 46 parts by mass of epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., trade name "JER1001"), phenol resin (Meiwa Kasei) 51 parts by mass of spherical silica (manufactured by Admatex, trade name "SO-25R"), and curing catalyst (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name "Curesol") PHZ ”) 0.6 parts by mass was added to methyl ethyl ketone and mixed to obtain a die bond composition having a solid content concentration of 20% by mass.
Next, the die bond composition was applied to a silicone-treated surface of a PET-based separator (thickness 50 μm), which is a release liner, so as to have a thickness of 10 μm using an applicator, and dried at 130 ° C. for 2 minutes. Then, the solvent was removed from the die bond composition to obtain a die bond sheet in which the die bond layer was laminated on the release liner.
Next, the side of the dicing tape on which the release sheet is not laminated is attached to the adhesive layer of the dicing tape, and then the release liner is peeled from the die bond layer to provide a dicing with the die bond layer. A die bond film was obtained.

(Bending hardness)
The bending hardness of the base material layer before forming the pressure-sensitive adhesive layer was determined.
The flexural rigidity was determined as the product of the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the moment of inertia of area of the base material layer.

The elastic modulus of the base material layer before forming the pressure-sensitive adhesive layer was determined as follows.

Measuring device and measuring conditions / device: Tribo Indenter (manufactured by Hisiron Inc.)
・ Indenter used: Berkovich type diamond indenter (triangular pyramidal type)
・ Measurement method: Single push measurement ・ Measurement temperature: 25 ℃
・ Push-in depth setting: 200 nm
・ Measurement atmosphere: In air ・ Load (push) speed: 20 nm / s
・ Unloading speed (pulling out): 20 nm / s
After embedding the entire dicing tape (length l: 5 mm, width w: 5 mm, thickness t: 125 μm) using the measurement sample embedding resin, the embedded dicing tape is placed in the width direction using a microtome. A sample obtained by cutting out a cross section along the above (a cross section cut out) was used as a measurement sample.
As the embedding resin, DEV-TUBE S-31 (manufactured by ITW PP & F Japan) was used.
Measurement method (1) The measurement sample was held at 25 ° C. for 1 hour.
(2) The measurement sample was arranged so that the pushing direction of the Berkovich diamond indenter and the surface of the base material layer of the measurement sample were orthogonal to each other.
(3) After the tip of the Berkovich diamond indenter is brought into contact with the surface of the base material layer of the measurement sample, the Berkovich diamond indenter is applied from the surface of the base material layer 1 to a depth of 200 nm at a load rate of 20 nm / s. Was pushed in.
(4) After pushing the Berkovich diamond indenter from the surface of the base material layer to a depth of 200 nm, the Berkovich diamond indenter was returned to the position at the start of pushing at a unloading speed of 20 nm / s.
(5) Using the analysis software "Triboscan Ver. 9.2.12.0", each displacement of the base material layer 1 when the indenter is unloaded from the position where the indenter is most pushed in, and when each displacement is obtained. From the load applied to the base material layer and the indentation area at each of the displacements theoretically calculated (the contact area between the indenter and the base material layer 1 at each displacement (contact projection area)). The elastic modulus was calculated.
The above measurement was performed at three different locations of the base material layer, and the elastic modulus of the base material layer was obtained by arithmetically averaging the elastic moduli calculated at the three locations.
Since the base material layer according to Example 1 had a three-layer structure, the elastic modulus was determined for each layer.

Further, the moment of inertia of area of the base material layer before forming the pressure-sensitive adhesive layer was calculated using the following formula in the process that the cross section of the base material layer was rectangular.

^{I = w × h 3/12} ( although, w is the width of the base layer, h is the thickness of the substrate layer)

Here, since the base material layer according to Example 1 had a three-layer structure, the moment of inertia of area was calculated for each layer.
The width of the first layer (layer A) of the base material layer is 300 mm and the thickness is 10.4 μm, and the width of the second layer (layer B) of the base material layer is 300 mm and the thickness is 10.4 μm. The width of the third layer (C layer) of the base material layer was 300 mm, and the thickness was 10.4 μm.
The flexural rigidity of the base material layer according to Example 1 was determined by determining the product of the elastic modulus and the moment of inertia of area for each layer and adding them together.

(Elastic recovery rate)
The elastic recovery rate of the base material layer before forming the pressure-sensitive adhesive layer was determined.
For the elastic recovery rate, the same measuring device and measurement sample used for the above-mentioned measurement of the base material layer were used, and the same measurement conditions as the above-mentioned measurement conditions for the elastic modulus of the base material layer were adopted. 9.9.2.12.0 ”was used, and the measurement was performed by adopting the same measuring method as the elastic modulus of the base material layer described above.

(hardness)
The hardness of the base material layer before forming the pressure-sensitive adhesive layer was determined.
For the hardness, the same measuring device and measurement sample used for the above-mentioned measurement of the base material layer were used, and the same measurement conditions as the above-mentioned measurement conditions for the elastic modulus of the base material layer were adopted. Using ".2.12.0", the load applied to the substrate layer when the indenter is pushed in most, and the indentation area theoretically calculated when the indenter is pushed in most (when the indenter is pushed in most). The measurement was performed by determining the hardness of the base material layer from the contact area (contact projection area) between the indenter and the base material layer.

(Heat shrinkage rate)
The heat shrinkage rate in the MD direction at 100 ° C. of a test piece cut out to a predetermined size (width 20 mm, length 120 mm) so that the MD direction is the length direction from the base material layer before forming the pressure-sensitive adhesive layer. It was measured.
The heat shrinkage was determined according to the following procedure.
(1) Marking was performed at 10 mm from both ends of the test piece in the length direction before heating.
_{(2) The distance L 0} (that is, the initial length in the MD direction) between the markings of the test piece before heating was measured.
(3) The test piece was exposed to an environment at a temperature of 100 ° C. for 60 seconds with the portion outside the marked portion (that is, the end side in the length direction) fixed with a clip.
(4) After cooling the test piece to room temperature (23 ± 2 ° C.), the length L ₁ was measured at the same location as in (2).
_{(5) The dimensional change rate RC} in the length direction (MD direction) of the test piece was calculated according to the following formula.

_RC = (L _0- L ₁ ) / L ₀ x 100

(Evaluation of chip float)
A bare wafer (diameter 300 mm) and a dicing ring were attached to the dicing die bond film according to Example 1 obtained as described above.
Next, the semiconductor wafer and the die bond layer were cut using a die separator DDS230 (manufactured by Disco Corporation), and the chip floating after the cutting was evaluated. The bare wafer was cut into bare chips having a size of 10 mm in length × 10 mm in width × 0.055 mm in thickness.
As the bare wafer, a warped wafer was used.

The warped wafer was produced as follows.
First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warp adjusting composition having a solid content concentration of 20% by mass.
(A) Acrylic resin (manufactured by Nagase ChemteX Corporation, product name "SG-70L"): 5 parts by mass (b) Epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., product name "JER828"): 5 parts by mass (c) Phenol resin (Manufactured by Meiwa Kasei Co., Ltd., trade name "LDR8210"): 14 parts by mass (d) Epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., trade name "MEH-8005"): 2 parts by mass (e) Spherical silica (manufactured by Admatex Product name "SO-25R"): 53 parts by mass (f) Phosphorus catalyst (TPP-K): 1 part by mass Next, the warp adjusting composition is subjected to silicone of a PET-based separator (thickness 50 μm) as a release liner. The treated surface is coated with an applicator to a thickness of 25 μm, dried at 130 ° C. for 2 minutes to remove the solvent from the warp adjusting composition, and the warp adjusting layer is laminated on the release liner to adjust the warp. I got a sheet.
Next, a bare wafer is attached to the side of the warp adjusting sheet on which the release liner is not laminated, using a laminator (manufactured by MCK, model MRK-600) under the conditions of 60 ° C., 0.1 MPa, and 10 mm / s. Then, it was placed in an oven and heated at 175 ° C. for 1 hour to heat-cure the resin in the warp adjusting layer, whereby a warped bare wafer was obtained by shrinking the warp adjusting layer.
After shrinking the warp adjusting layer, a wafer processing tape (manufactured by Nitto Denko KK, trade name "V-12SR2") is attached to the side of the warped bare wafer where the warp adjusting layer is not laminated, and then the above. The dicing ring was fixed to the warped bare wafer via the wafer processing tape. Then, the warp adjusting layer was removed from the warped bare wafer.
Using a dicing device (manufactured by DISCO Corporation, model number 6361), grooves having a depth of 100 μm from this surface are formed in a grid pattern (hereinafter referred to as one surface) on the entire surface (hereinafter referred to as one surface) of the warped bare wafer from which the warp adjusting layer has been removed. The width was 20 μm).
Next, a back grind tape was attached to one side of the warped bare wafer, and the wafer processing tape was removed from the other side of the warped bare wafer (the side opposite to the one side).
Next, a wafer obtained by grinding a warped bare wafer from the other side using a back grinder (manufactured by DISCO, model DGP8760) so that the thickness of the warped bare wafer is 55 μm (0.055 mm). Was used as a warped wafer.

The chip float was evaluated in detail as follows.
First, in a cool expander unit, the bare wafer and the die bond layer were cut under the conditions of an expanding temperature of −5 ° C., an expanding speed of 100 mm / sec, and an expanding amount of 12 mm to obtain a semiconductor chip with a die bond layer.
Next, expansion was performed under the conditions of room temperature, an expanding speed of 1 mm / sec, and an expanding amount of 5 mm. Then, while maintaining the expanded state, the dicing die bond film at the boundary with the outer peripheral edge of the bare wafer was heat-shrinked under the conditions of a heat temperature of 200 ° C., a heat distance of 18 mm, and a rotation speed of 5 ° / sec.
Next, with respect to the surface of the base material layer of the dicing die bond film, the floating state of the semiconductor chip with the dicing layer was photographed by microscopic observation, and the floating area was calculated by binarizing the surface. Then, the case where the floating area was less than 4% was evaluated as 〇, and the case where the floating area was 4% or more was evaluated as ×.

[Example 2]
A dicing tape and a dicing die bond film according to Example 2 were obtained in the same manner as in Example 1 except that the base material layer was 125 μm.
Further, with respect to the base material layer according to Example 2, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 2, chip floating was evaluated in the same manner as in Example 1.

[Example 3]
A dicing tape and a dicing die bond film according to Example 3 were obtained in the same manner as in Example 1 except that the base material layer was set to 150 μm.
Further, with respect to the base material layer according to Example 3, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 3, chip floating was evaluated in the same manner as in Example 1.

[Example 4]
Example 3 in the same manner as in Example 3 except that the thickness ratio (layer thickness ratio) of the A layer, the B layer, and the C layer was set to A layer: B layer: C layer = 1: 4: 1. The dicing tape and the dicing die bond film according to No. 4 were obtained.
Further, with respect to the base material layer according to Example 4, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 4, chip floating was evaluated in the same manner as in Example 1.

[Example 5]
Example 5 was the same as in Example 2 except that the base material layer was composed of two layers, A layer and B layer, and the layer thickness ratio of the base material layer was A layer: B layer = 1: 5. The dicing tape and the dicing die bond film according to the above were obtained.
Further, with respect to the base material layer according to Example 5, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 5, chip floating was evaluated in the same manner as in Example 1.

[Example 6]
The dicing tape and dicing die bond film according to Example 6 were obtained in the same manner as in Example 2 except that the resin constituting the A layer and the C layer (outer layer) of the base material layer was Novatec LC720.
Further, for the base material layer according to Example 6, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 6, chip floating was evaluated in the same manner as in Example 1.

[Example 7]
The dicing tape and the dicing tape according to Example 7 were obtained in the same manner as in Example 2 except that the resin constituting the A layer and C layer (outer layer) of the base material layer was Niporon Hard (registered trademark) 2000 (manufactured by Tosoh). A dicing die bond film was obtained.
Further, with respect to the base material layer according to Example 7, bending hardness, elastic recovery rate, and hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Example 7, chip floating was evaluated in the same manner as in Example 1.

[Comparative Example 1]
A dicing tape and a dicing die bond film according to Comparative Example 1 were obtained in the same manner as in Example 2 except that the base material layer was composed of one layer of A layer.
Further, with respect to the base material layer according to Comparative Example 1, the bending hardness, the elastic recovery rate, and the hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Comparative Example 1, chip floating was evaluated in the same manner as in Example 1.

[Comparative Example 2]
The dicing tape and the dicing tape according to Comparative Example 2 were obtained in the same manner as in Comparative Example 1 except that the resin constituting the A layer of the base material layer was Niporon Hard (registered trademark) 2000 (manufactured by Tosoh) and the layer thickness was 150 μm. A dicing die bond film was obtained.
Further, with respect to the base material layer according to Comparative Example 2, the bending hardness, the elastic recovery rate, and the hardness were determined in the same manner as in Example 1.
Further, with respect to the base material layer according to Comparative Example 2, chip floating was evaluated in the same manner as in Example 1.

Table 1 below shows the results of determining the bending hardness, elastic recovery rate, and hardness of the base material layer according to each example, as well as the results of evaluating the chip floating of the dicing die bond film according to each example.

From Table 1, all of the base material layers according to Examples 1 to 7 have a bending hardness of 40 N · mm ² or less and a heat shrinkage rate of 20% or less, and Examples 1 to 7 show. It can be seen that the dicing die bond film according to the above can suppress chip floating.
On the other hand, the base material layer according to Comparative Example 1 has a bending hardness of 40 N · mm ² or less, but has a heat shrinkage rate of more than 20%, and the dicing die bond film according to Comparative Example 1 has a chip floating. It can be seen that the above is not sufficiently suppressed.
Further, although the base material layer according to Comparative Example 2 has a heat shrinkage rate of 20% or less, the bending hardness ^{exceeds 40 N · mm 2} , and the dicing die bond film according to Comparative Example 2 has sufficient chip floating. It can be seen that it has not been suppressed.
The results shown in Table 1 relate to the dicing die bond film, but it is expected that the same results as those shown in Table 1 can be obtained with the dicing tape contained in the dicing die bond film.

1 Base material layer 2 Adhesive layer 3 Die bond layer 10 Dicing tape 20 Dicing die bond film 1a 1st resin layer 1b 2nd resin layer 1c 3rd resin layer G Back grind tape H Holder J Adsorption jig T Wafer processing tape U Push-up member W semiconductor wafer

Claims (4)

A dicing tape in which an adhesive layer is laminated on a base material layer.
The base material layer is composed of a resin film having a single structure or a laminated structure.
The base material layer has a heat shrinkage rate of 20% or less in the MD direction at 100 ° C., and the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the cross section of the base material layer 2. ^{A dicing tape having a bending hardness of 40 N · mm 2} or less, which is required as the product of the next moment. The dicing tape according to claim 1, wherein the base material layer has an elastic recovery rate of 75% or less when measured at 25 ° C. using a nanoindenter with respect to the surface layer portion on the side where the pressure-sensitive adhesive layer is laminated. .. The dicing tape according to claim 1 or 2, wherein the base material layer has a hardness of 40 MPa or less when measured at 25 ° C. using a nanoindenter for a surface layer portion on the side on which the pressure-sensitive adhesive layer is laminated. A dicing tape in which an adhesive layer is laminated on a base material layer,
A die bond layer laminated on the adhesive layer of the dicing tape is provided.
The base material layer is composed of a resin film having a single structure or a laminated structure.
The base material layer has a thermal shrinkage rate of 20% or less in the MD direction at 100 ° C., and the elastic modulus of the base material layer measured at 25 ° C. using a nanoindenter and the cross section of the base material layer 2. A dicing die bond film having a ^{flexural rigidity of 40 N · mm 2} or less, which is required as the product of the next moment.

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