JP2021064698A - Light-emitting device and method for manufacturing the same - Google Patents

Light-emitting device and method for manufacturing the same Download PDF

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JP2021064698A
JP2021064698A JP2019188268A JP2019188268A JP2021064698A JP 2021064698 A JP2021064698 A JP 2021064698A JP 2019188268 A JP2019188268 A JP 2019188268A JP 2019188268 A JP2019188268 A JP 2019188268A JP 2021064698 A JP2021064698 A JP 2021064698A
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wall
groove
light emitting
substrate
resin
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JP7196813B2 (en
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欣司 林
Kinji Hayashi
欣司 林
重郎 武田
Shigeo Takeda
重郎 武田
健一 松浦
Kenichi Matsuura
健一 松浦
下西　正太
Shota Shimonishi
正太 下西
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

To provide a method for manufacturing a light-emitting device capable of simply forming a reflection wall of a double structure whose inside is a white wall and outside is a black wall.SOLUTION: A first groove 20 is formed by half dicing. A depth of the first groove 20 may be such a depth as to penetrate through a sealing resin 13 and not to penetrate through a substrate 10. Subsequently, a white resin is injected to the first groove 20 to be embedded in the first groove 20, and is cured so that a white wall 15 is formed. Subsequently, a second groove 21 is formed by half dicing. A width of the second groove 21 is made narrower than a width of the first groove 20, and a center in a width direction of the second groove 21 is set to coincide with a dividing line L. A depth of the second groove 21 is set at such a depth as to penetrate through the white wall 15 and not to penetrate through the substrate 10. Subsequently, a black resin is injected to the second groove 21 to be embedded in the second groove 21, and is cured so that a black wall 16 is formed. Subsequently, dicing is performed, and it is separated into individual light-emitting devices.SELECTED DRAWING: Figure 3

Description

本発明は、発光素子の周囲を囲う反射壁が設けられた発光装置に関する。また、その製造方法に関する。 The present invention relates to a light emitting device provided with a reflective wall surrounding the light emitting element. It also relates to the manufacturing method thereof.

発光素子の周囲を囲う反射壁を設けた発光装置が広く知られている。反射壁の製造方法として、特許文献１に記載の方法がある。特許文献１には、基板上に実装された発光素子を樹脂封止した後、ハーフダイシングによって発光素子を囲う位置に溝を形成し、その溝に白色樹脂を充填して埋めることにより、反射壁を形成することが記載されている。 A light emitting device provided with a reflecting wall surrounding the light emitting element is widely known. As a method for manufacturing a reflective wall, there is a method described in Patent Document 1. In Patent Document 1, after the light emitting element mounted on the substrate is sealed with resin, a groove is formed at a position surrounding the light emitting element by half dicing, and the groove is filled with white resin to fill the reflection wall. Is described to form.

また、特許文献２、３には、内側が白色樹脂、外側が黒色樹脂の二重構造とした反射壁を有する発光装置が示されている。このような二重構造とすることで、光漏れを抑制している。 Further, Patent Documents 2 and 3 show a light emitting device having a reflective wall having a double structure of a white resin on the inside and a black resin on the outside. With such a double structure, light leakage is suppressed.

特開２０１８−２２７５８号公報Japanese Unexamined Patent Publication No. 2018-22758 特開２０１５−１７６９４６号公報JP-A-2015-176946 特開２０１２−２１６５９６号公報Japanese Unexamined Patent Publication No. 2012-216596

しかし、特許文献１の方法では、反射壁から光が漏れてしまう問題があり、光束が低下したりコントラストが低下する問題があった。また、特許文献２、３のような二重構造の反射壁を簡便に形成する方法は確立されていなかった。 However, the method of Patent Document 1 has a problem that light leaks from the reflection wall, and has a problem that the luminous flux is lowered and the contrast is lowered. Further, a method for easily forming a reflective wall having a double structure as in Patent Documents 2 and 3 has not been established.

そこで本発明の目的は、内側が白壁、外側が黒壁の二重構造の反射壁を簡便に形成することが可能な発光装置の製造方法を提供することである。 Therefore, an object of the present invention is to provide a method for manufacturing a light emitting device capable of easily forming a reflective wall having a double structure with a white wall on the inside and a black wall on the outside.

本発明は、基板表面上の所定位置に発光素子を実装する実装工程と、基板上および発光素子上に封止樹脂を設け、発光素子を封止する封止工程と、各発光装置ごとに分割を予定している分割予定ラインに沿って、ハーフダイシングを行って第１溝を形成し、第１溝の深さは、封止樹脂を貫通し、かつ基板を貫通しない深さに設定する第１溝形成工程と、第１溝に白色樹脂を注入して第１溝を埋め、白色樹脂を硬化させて白壁を形成する白壁形成工程と、分割予定ラインに沿って、ハーフダイシングを行って第２溝を形成し、第２溝の幅は、第１溝の幅よりも狭くし、第２溝の深さは、白壁を貫通し、かつ基板を貫通しない深さに設定し、これにより白壁を分割予定ラインの左右で分割する第２溝形成工程と、第２溝に黒色樹脂を注入して第２溝を埋め、黒色樹脂を硬化させて黒壁を形成する黒壁形成工程と、分割予定ラインに沿ってダイシングを行い、黒壁および基板を分割予定ラインの左右で分割する分割工程と、を有することを特徴とする発光装置の製造方法である。 The present invention is divided into a mounting step of mounting a light emitting element at a predetermined position on the substrate surface, a sealing step of providing a sealing resin on the substrate and the light emitting element and sealing the light emitting element, and each light emitting device. The first groove is formed by half-dying along the planned division line, and the depth of the first groove is set to a depth that penetrates the sealing resin and does not penetrate the substrate. A 1-groove forming step, a white wall forming step of injecting white resin into the 1st groove to fill the 1st groove, and curing the white resin to form a white wall, and a half-dying along the planned division line are performed. Two grooves are formed, the width of the second groove is narrower than the width of the first groove, and the depth of the second groove is set to a depth that penetrates the white wall and does not penetrate the substrate, whereby the white wall is formed. A second groove forming step of dividing the parts on the left and right sides of the planned division line, and a black wall forming step of injecting black resin into the second groove to fill the second groove and curing the black resin to form a black wall. A method for manufacturing a light emitting device, which comprises a dividing step of diving along a scheduled line and dividing a black wall and a substrate on the left and right sides of the scheduled line.

また、本発明において、黒壁形成工程後、分割工程前に、研磨によって封止樹脂上面、白壁上面、および黒壁上面を面一にする研磨工程をさらに有していてもよい。 Further, in the present invention, there may be further a polishing step of making the upper surface of the sealing resin, the upper surface of the white wall, and the upper surface of the black wall flush by polishing after the black wall forming step and before the dividing step.

また、本発明において、白色樹脂と黒色樹脂は、母材樹脂が同一材料であってもよい。 Further, in the present invention, the white resin and the black resin may be made of the same base material resin.

また、本発明は、基板と、基板表面上に設けられた発光素子と、基板の端部に設けられた反射壁と、基板と反射壁とで囲まれた内部を埋めるようにして設けられ、発光素子を封止する封止樹脂と、を有した発光装置において、反射壁は、内側が白色樹脂からなる白壁、外側が黒色樹脂からなる黒壁の二重構造であり、基板は、端部に段差部を有し、段差部は、内側から外側に向かって下っていく２段の段差構造であって、基板表面よりも１段低くなっている表面である第１段差表面と、第１段差表面よりもさらに１段低くなっている表面である第２段差表面とを有し、白壁は、第１段差表面上に設けられ、黒壁は、第２段差表面上に設けられ、第１段差表面および第２段差表面は、基板表面よりも算術平均粗さが大きい、ことを特徴とする発光装置である。 Further, the present invention is provided so as to fill the inside surrounded by the substrate, the light emitting element provided on the surface of the substrate, the reflective wall provided at the end of the substrate, and the substrate and the reflective wall. In a light emitting device having a sealing resin for sealing a light emitting element, the reflective wall has a double structure of a white wall made of white resin on the inside and a black wall made of black resin on the outside, and the substrate has an end portion. The stepped portion has a stepped portion, and the stepped portion has a two-step step structure that descends from the inside to the outside, and is a surface that is one step lower than the substrate surface, that is, a first step surface and a first step surface. It has a second step surface which is one step lower than the step surface, a white wall is provided on the first step surface, and a black wall is provided on the second step surface. The stepped surface and the second stepped surface are light emitting devices having an arithmetic mean roughness larger than that of the substrate surface.

本発明によれば、内側が白色樹脂、外側が黒色樹脂の二重構造の反射壁を簡便に形成することができる。また、反射壁を基板から剥がれにくくすることができる。 According to the present invention, it is possible to easily form a reflective wall having a double structure with a white resin on the inside and a black resin on the outside. In addition, the reflective wall can be prevented from peeling off from the substrate.

実施例１の発光装置の構成を示した図。The figure which showed the structure of the light emitting device of Example 1. FIG. 実施例１の発光装置の製造工程を示した図。The figure which showed the manufacturing process of the light emitting device of Example 1. 実施例１の発光装置の製造工程を示した図。The figure which showed the manufacturing process of the light emitting device of Example 1.

以下、本発明の具体的な実施例について図を参照に説明するが、本発明は実施例に限定されるものではない。 Hereinafter, specific examples of the present invention will be described with reference to the drawings, but the present invention is not limited to the examples.

図１は、実施例１の発光装置の構成を示した図である。図１のように、実施例１の発光装置は、基板１０と、発光素子１１と、反射壁１２と、封止樹脂１３とを有している。 FIG. 1 is a diagram showing a configuration of a light emitting device according to the first embodiment. As shown in FIG. 1, the light emitting device of the first embodiment includes a substrate 10, a light emitting element 11, a reflective wall 12, and a sealing resin 13.

基板１０は、矩形の板状の部材である。基板１０の材料は、セラミック、ガラス、ガラスエポキシ樹脂などである。基板１０の表面１０ａには、配線パターン（図示しない）が形成されている。また、基板１０の裏面１０ｂには、外部の電気回路と接続するための電極パターン（図示しない）が形成されている。基板１０に空けられた孔（図示しない）を介して表面側の配線パターンと裏面側の電極パターンとが接続されている。 The substrate 10 is a rectangular plate-shaped member. The material of the substrate 10 is ceramic, glass, glass epoxy resin, or the like. A wiring pattern (not shown) is formed on the surface 10a of the substrate 10. Further, an electrode pattern (not shown) for connecting to an external electric circuit is formed on the back surface 10b of the substrate 10. The wiring pattern on the front surface side and the electrode pattern on the back surface side are connected to each other through holes (not shown) formed in the substrate 10.

基板１０の端部には、階段状の段差部１４が設けられている。段差部１４は、発光装置の内側から外側に向かって下っていく２段の段差構造である。この段差部１４によって基板１０表面１０ａよりも１段低くなっている表面を第１段差表面１４ａ、第１段差表面１４ａよりもさらに１段低くなっている表面を第２段差表面１４ｂとする。第１段差表面１４ａおよび第２段差表面１４ｂは、基板１０表面１０ａとおよそ平行であり、第２段差表面１４ｂは基板１０の側面と連続している。第１段差表面１４ａおよび第２段差表面１４ｂは、基板１０表面１０ａよりも算術平均粗さが大きくなっている。 A stepped portion 14 is provided at the end of the substrate 10. The step portion 14 has a two-step step structure that descends from the inside to the outside of the light emitting device. The surface that is one step lower than the substrate 10 surface 10a due to the step portion 14 is referred to as the first step surface 14a, and the surface that is one step lower than the first step surface 14a is referred to as the second step surface 14b. The first step surface 14a and the second step surface 14b are substantially parallel to the substrate 10 surface 10a, and the second step surface 14b is continuous with the side surface of the substrate 10. The first step surface 14a and the second step surface 14b have a larger arithmetic mean roughness than the substrate 10 surface 10a.

発光素子１１は、基板１０表面１０ａ上に実装されていて、基板１０表面１０ａの配線パターンと発光素子１１の電極とが、ワイヤ、はんだ、バンプなどによって接続されている。発光素子１１は任意の半導体材料、任意の構造でよく、発光色も問わない。また、発光素子１１は１つである必要もなく、複数の発光素子１１が基板１０表面１０ａ上に実装されていてよい。たとえば、青色発光の発光素子１１、緑色発光の発光素子１１、赤色発光の発光素子１１を１組として、それらが１組〜複数組実装されていてよい。青色、緑色、赤色の各出力を制御することで任意の発光色を発光可能な発光装置を実現できる。また、基板１０表面には、発光素子１１以外の電子部品が実装されていてもよい。たとえば、発光素子１１の駆動回路、温度保護素子などが発光素子１１とともに基板１０表面１０ａ上に実装されていてもよい。 The light emitting element 11 is mounted on the surface 10a of the substrate 10, and the wiring pattern of the surface 10a of the substrate 10 and the electrodes of the light emitting element 11 are connected by wires, solder, bumps, or the like. The light emitting element 11 may be of any semiconductor material and any structure, and the light emitting color may be limited. Further, the number of light emitting elements 11 does not have to be one, and a plurality of light emitting elements 11 may be mounted on the surface 10a of the substrate 10. For example, a blue light emitting light emitting element 11, a green light emitting light emitting element 11, and a red light emitting light emitting element 11 may be set as one set, and one set or a plurality of sets thereof may be mounted. By controlling each output of blue, green, and red, it is possible to realize a light emitting device capable of emitting an arbitrary light emitting color. Further, electronic components other than the light emitting element 11 may be mounted on the surface of the substrate 10. For example, the drive circuit of the light emitting element 11, the temperature protection element, and the like may be mounted on the surface 10a of the substrate 10 together with the light emitting element 11.

反射壁１２は、基板１０の段差部１４上に壁状に設けられている。反射壁１２は二重構造であり、発光装置の内側が白色の白壁１５、外側が黒色の黒壁１６である。白壁１５と黒壁１６とは接合している。白壁１５、黒壁１６は、いずれも直立した板状（壁状）である。 The reflective wall 12 is provided in a wall shape on the stepped portion 14 of the substrate 10. The reflection wall 12 has a double structure, and the inside of the light emitting device is a white white wall 15 and the outside is a black black wall 16. The white wall 15 and the black wall 16 are joined. The white wall 15 and the black wall 16 are both upright plate-shaped (wall-shaped).

白壁１５は、段差部１４のうち第１段差表面１４ａ上に設けられている。第１段差表面１４ａは荒れて微細な凹凸を有しており、その凹凸に白壁１５が入り込んでいるため、アンカー効果によって基板１０から白壁１５が剥離しにくくなっている。 The white wall 15 is provided on the first step surface 14a of the step portion 14. The first step surface 14a is rough and has fine irregularities, and since the white wall 15 is included in the irregularities, it is difficult for the white wall 15 to peel off from the substrate 10 due to the anchor effect.

白壁１５は、シリコーン樹脂、エポキシ樹脂、アクリル樹脂などの樹脂にＴｉＯ2 、ＺｒＯ2 、Ａｌ2 Ｏ3 、ＳｉＯ2 の粒子などの光反射材を混合した白色樹脂からなる。この白壁１５によって発光素子１１から側方に放射される光を反射させ、発光装置の出力向上を図っている。なお、「白色」とは、本発明においては発光素子１１からの光の反射率が十分に高い色であることを意味し、たとえば反射率が８０％以上である。 The white wall 15 is made of a white resin obtained by mixing a resin such as a silicone resin, an epoxy resin, or an acrylic resin with a light reflecting material such as particles of TiO 2 , ZrO 2 , Al 2 O 3 , or SiO 2. The white wall 15 reflects the light radiated laterally from the light emitting element 11 to improve the output of the light emitting device. In the present invention, "white" means that the color has a sufficiently high reflectance of light from the light emitting element 11, and for example, the reflectance is 80% or more.

黒壁１６は、白壁１５の外側に接して位置し、段差部１４のうち第２段差表面１４ｂ表面上に設けられている。また、黒壁１６の上面は、白壁１５の上面と面一になっていて、黒壁１６の外側側面は、基板１０の側面と面一になっている。第２段差表面１４ｂは荒れて微細な凹凸を有しており、その凹凸に黒壁１６が入り込んでいるため、アンカー効果によって基板１０から黒壁１６が剥離しにくくなっている。 The black wall 16 is located in contact with the outside of the white wall 15 and is provided on the surface of the second step surface 14b of the step portions 14. Further, the upper surface of the black wall 16 is flush with the upper surface of the white wall 15, and the outer side surface of the black wall 16 is flush with the side surface of the substrate 10. The second step surface 14b is rough and has fine irregularities, and since the black wall 16 has entered the irregularities, it is difficult for the black wall 16 to peel off from the substrate 10 due to the anchor effect.

黒壁１６は、シリコーンなどの樹脂にカーボンブラック、カーボンナノチューブなどの光吸収材を混合した黒色樹脂からなる。製造の簡便さや低コスト化の点から、白壁１５と黒壁１６とで母材樹脂は同一材料とすることが好ましい。なお、「黒色」とは、本発明においては発光素子１１からの光の吸収率が十分に高い色であることを意味し、たとえば吸収率が８０％以上である。 The black wall 16 is made of a black resin obtained by mixing a resin such as silicone with a light absorbing material such as carbon black and carbon nanotubes. From the viewpoint of ease of production and cost reduction, it is preferable that the base resin is the same material for the white wall 15 and the black wall 16. In the present invention, "black" means a color having a sufficiently high absorption rate of light from the light emitting element 11, for example, an absorption rate of 80% or more.

黒壁１６を設ける理由は次の通りである。発光素子１１から側方に放射される光は、白壁１５によって大部分が反射されるが、一部は白壁１５を透過してしまう。このような発光装置の側方から漏れる光によって発光装置の光束が低下したりコントラストが低下してしまう。そこで、白壁１５を透過する光を黒壁１６により吸収させることで側方からの光の漏れを抑制し、光束の向上、コントラストの向上を図っている。特に、黒壁１６は、白壁１５の外側側面を完全に覆っているため、光の漏れをより抑制することができる。 The reason for providing the black wall 16 is as follows. Most of the light radiated from the light emitting element 11 to the side is reflected by the white wall 15, but a part of the light is transmitted through the white wall 15. The light leaking from the side of such a light emitting device lowers the luminous flux of the light emitting device and lowers the contrast. Therefore, by absorbing the light transmitted through the white wall 15 by the black wall 16, leakage of light from the side is suppressed, and the luminous flux and the contrast are improved. In particular, since the black wall 16 completely covers the outer side surface of the white wall 15, light leakage can be further suppressed.

また、白壁１５は第１段差表面１４ａ上、黒壁１６は第２段差表面１４ｂ上に設けられているため、黒壁１６の下面は白壁１５の下面よりも低くなっている。そのため、白壁１５を斜め下方に透過する光も黒壁１６によって吸収させることができ、光の漏れをさらに抑制することができる。 Further, since the white wall 15 is provided on the first step surface 14a and the black wall 16 is provided on the second step surface 14b, the lower surface of the black wall 16 is lower than the lower surface of the white wall 15. Therefore, the light transmitted obliquely downward through the white wall 15 can also be absorbed by the black wall 16, and the leakage of light can be further suppressed.

基板１０裏面１０ｂから第１段差表面１４ａ（白壁１５の下面）までの高さＨ１は、基板１０の厚さＨ０の０．３〜０．７倍が好ましい。その理由は後述の製造工程において説明する。 The height H1 from the back surface 10b of the substrate 10 to the surface 14a of the first step (the lower surface of the white wall 15) is preferably 0.3 to 0.7 times the thickness H0 of the substrate 10. The reason will be described in the manufacturing process described later.

また、基板１０裏面１０ｂから第２段差表面１４ｂ（黒壁１６の下面）までの高さＨ２は、Ｈ１の０．４〜０．７倍が好ましい。この範囲であれば、白壁１５を斜め下方に透過する光の漏れをより抑制することができる。 The height H2 from the back surface 10b of the substrate 10 to the surface 14b of the second step (the lower surface of the black wall 16) is preferably 0.4 to 0.7 times that of H1. Within this range, leakage of light that passes diagonally downward through the white wall 15 can be further suppressed.

白壁１５の厚さは、発光素子１１からの光の反射率が十分に高く、透過率を十分に低下できる範囲であればよい。たとえば、白壁１５に対して垂直に入射する光の反射率が８０％以上、透過率が１０％以下となるように厚さを設定するとよい。 The thickness of the white wall 15 may be a range in which the reflectance of the light from the light emitting element 11 is sufficiently high and the transmittance can be sufficiently reduced. For example, the thickness may be set so that the reflectance of light vertically incident on the white wall 15 is 80% or more and the transmittance is 10% or less.

黒壁１６の厚さは、白壁１５を透過してきた光の吸収率が高く、透過率を十分に低下できる範囲であればよい。たとえば、黒壁１６に対して垂直に入射する光の吸収率が８０％以上、透過率が１０％以下となるように厚さを設定するとよい。 The thickness of the black wall 16 may be a range as long as the absorption rate of the light transmitted through the white wall 15 is high and the transmittance can be sufficiently reduced. For example, the thickness may be set so that the absorption rate of light vertically incident on the black wall 16 is 80% or more and the transmittance is 10% or less.

封止樹脂１３は、基板１０表面１０ａと反射壁１２により囲まれた内部を埋めるように設けられていて、その厚さは均一である。この封止樹脂１３によって発光素子１１が封止されている。また、封止樹脂１３の表面は、反射壁１２の上面と面一になっている。そのため、実施例１の発光装置は全体として直方体状となっている。 The sealing resin 13 is provided so as to fill the inside surrounded by the surface 10a of the substrate 10 and the reflective wall 12, and the thickness thereof is uniform. The light emitting element 11 is sealed by the sealing resin 13. The surface of the sealing resin 13 is flush with the upper surface of the reflective wall 12. Therefore, the light emitting device of the first embodiment has a rectangular parallelepiped shape as a whole.

封止樹脂１３の材料は、シリコーン樹脂、エポキシ樹脂など発光素子１１から放射される光を透過可能な任意の樹脂材料である。封止樹脂１３には光拡散材、蛍光体、熱拡散材など、任意の材料が添加されていてもよい。 The material of the sealing resin 13 is an arbitrary resin material capable of transmitting light radiated from the light emitting element 11, such as a silicone resin or an epoxy resin. Any material such as a light diffusing material, a phosphor, and a heat diffusing material may be added to the sealing resin 13.

以上、実施例１の発光装置では、アンカー効果によって反射壁１２と基板１０との密着性が向上しており、応力の印加によって基板１０から反射壁１２が剥離してしまうことが抑制されている。また、白色樹脂からなる白壁１５の外側側面の全面を黒色樹脂からなる黒壁１６が覆っており、黒壁１６の下面が白壁の下面よりも低くなっているため、反射壁１２からの光の漏れが抑制されており、発光装置の光束が向上している。 As described above, in the light emitting device of the first embodiment, the adhesion between the reflective wall 12 and the substrate 10 is improved by the anchor effect, and it is suppressed that the reflective wall 12 is peeled off from the substrate 10 due to the application of stress. .. Further, since the entire outer side surface of the white wall 15 made of white resin is covered with the black wall 16 made of black resin and the lower surface of the black wall 16 is lower than the lower surface of the white wall, the light from the reflection wall 12 can be received. Leakage is suppressed and the luminous flux of the light emitting device is improved.

次に、実施例１の発光装置の製造方法について図２、３を参照に説明する。 Next, the method of manufacturing the light emitting device of the first embodiment will be described with reference to FIGS. 2 and 3.

まず、基板１０の表面１０ａ上の所定位置に発光素子１１を実装する。次に、基板１０の表面１０ａ上および発光素子１１上に、均一な厚さに封止樹脂１３を塗布して発光素子１１を封止し、熱処理によって封止樹脂１３を硬化させる（図２（ａ）参照）。発光素子１１の実装方法は発光素子１１の構造に応じて任意の方法を採用することができる。 First, the light emitting element 11 is mounted at a predetermined position on the surface 10a of the substrate 10. Next, the sealing resin 13 is applied to the surface 10a of the substrate 10 and the light emitting element 11 to a uniform thickness to seal the light emitting element 11, and the sealing resin 13 is cured by heat treatment (FIG. 2 (FIG. 2). a) See). As the mounting method of the light emitting element 11, any method can be adopted depending on the structure of the light emitting element 11.

次に、後工程で各発光装置ごとに分割を予定しているライン（分割予定ラインＬ）に沿って、封止樹脂１３表面側からハーフダイシングを行い、第１溝２０を形成する（図２（ｂ）参照）。第１溝２０の角部は丸まっていてもよい。分割予定ラインＬは平面視で格子状である。このハーフダイシングによって第１溝２０の底面には微細な凹凸が形成され、基板１０表面１０ａよりも粗い状態となる。なお、第１溝２０の底面は、段差部１４の第１段差表面１４ａとなる。 Next, half dicing is performed from the surface side of the sealing resin 13 along the line (scheduled division line L) scheduled to be divided for each light emitting device in the subsequent process to form the first groove 20 (FIG. 2). (B)). The corners of the first groove 20 may be rounded. The planned division line L has a grid pattern in a plan view. By this half dicing, fine irregularities are formed on the bottom surface of the first groove 20, and the surface is rougher than the surface 10a of the substrate 10. The bottom surface of the first groove 20 is the first step surface 14a of the step portion 14.

第１溝２０の幅は、反射壁１２の幅の２倍と、後の素子分割のダイシングの切り代とを合わせた幅に設定し、第１溝２０の幅方向の中心が分割予定ラインＬと一致するように設定する。 The width of the first groove 20 is set to a width that is the sum of twice the width of the reflective wall 12 and the dicing allowance for the subsequent element division, and the center of the first groove 20 in the width direction is the planned division line L. Set to match.

第１溝２０の深さは、封止樹脂１３を貫通して基板１０の表面１０ａに達するよりも深く、基板１０を貫通しない深さであればよい。たとえば、基板１０裏面１０ｂから第１溝２０の底面までの高さＨ１が、基板１０の厚さＨ０の０．３〜０．７倍となるように深さを設定するとよい。この範囲であれば、ハーフダイシングの深さの誤差があっても確実に封止樹脂１３を貫通させることができ、また基板１０を貫通しないようにすることができる。また、基板１０が薄くなって撓みや曲げ、割れが生じるのを抑制できる。 The depth of the first groove 20 may be deeper than penetrating the sealing resin 13 and reaching the surface 10a of the substrate 10 and not penetrating the substrate 10. For example, the depth may be set so that the height H1 from the back surface 10b of the substrate 10 to the bottom surface of the first groove 20 is 0.3 to 0.7 times the thickness H0 of the substrate 10. Within this range, the sealing resin 13 can be reliably penetrated even if there is an error in the depth of the half dicing, and the substrate 10 can be prevented from penetrating. In addition, it is possible to prevent the substrate 10 from becoming thin and bending, bending, or cracking.

次に、第１溝２０に白色樹脂を注入して第１溝２０を埋める。白色樹脂は第１溝２０からはみ出してもよい。ここで、第１溝２０の底面はハーフダイシングによって微細な凹凸が形成されているため、白色樹脂はこの微細な凹凸に入り込む。そして、白色樹脂を硬化させて白壁１５を形成する（図２（ｃ）参照）。白色樹脂が第１溝２０の底面の微細な凹凸に入り込んだ状態で硬化するため、アンカー効果によって白壁１５は基板１０から剥離しにくくなる。 Next, a white resin is injected into the first groove 20 to fill the first groove 20. The white resin may protrude from the first groove 20. Here, since the bottom surface of the first groove 20 is formed with fine irregularities by half dicing, the white resin penetrates into the fine irregularities. Then, the white resin is cured to form the white wall 15 (see FIG. 2C). Since the white resin is cured in a state where it has entered the fine irregularities on the bottom surface of the first groove 20, the white wall 15 is difficult to peel off from the substrate 10 due to the anchor effect.

次に、分割予定ラインＬに沿って、白壁１５上面側からハーフダイシングを行い、第２溝２１を形成する（図３（ａ）参照）。第２溝２１の角部は丸まっていてもよい。このハーフダイシングによって第２溝２１の底面には微細な凹凸が形成され、基板１０表面１０ａよりも粗い状態となる。なお、第２溝２１の底面は、段差部１４の第２段差表面１４ｂとなる。 Next, half dicing is performed from the upper surface side of the white wall 15 along the planned division line L to form the second groove 21 (see FIG. 3A). The corners of the second groove 21 may be rounded. By this half dicing, fine irregularities are formed on the bottom surface of the second groove 21, and the surface is rougher than the surface 10a of the substrate 10. The bottom surface of the second groove 21 is the second step surface 14b of the step portion 14.

第２溝２１の幅は、第１溝２０の幅よりも狭くし、第２溝２１の幅方向の中心が分割予定ラインＬと一致するように設定する。第２溝２１の幅は、黒壁１６の幅の２倍と、後の素子分割のダイシングの切り代とを合わせた幅になる。 The width of the second groove 21 is made narrower than the width of the first groove 20, and the center of the second groove 21 in the width direction is set so as to coincide with the planned division line L. The width of the second groove 21 is the sum of twice the width of the black wall 16 and the dicing allowance for the subsequent element division.

第２溝２１の深さは、白壁１５を貫通して第１溝２０よりも深く、基板１０を貫通しない深さとする。 The depth of the second groove 21 is set to be deeper than the first groove 20 so as to penetrate the white wall 15 and not to penetrate the substrate 10.

このように第２溝２１の幅、深さを設定することにより、白壁１５は分割予定ラインＬの左右に分割され、一方の発光装置側の白壁１５と、それに隣接する他方の発光装置側の白壁１５に分割される。ここで、基板１０裏面１０ｂから第２溝２１の底面までの高さＨ２が、基板１０裏面１０ｂから第１溝２０の底面までの高さＨ１の０．４〜０．７倍となるように深さを設定するとよい。ハーフダイシングの深さの誤差があっても確実に白壁１５を貫通させることができ、また基板１０を貫通しないようにすることができる。また、白壁１５を斜め下方に透過する光の漏れをより抑制することができる。 By setting the width and depth of the second groove 21 in this way, the white wall 15 is divided into the left and right of the scheduled division line L, and the white wall 15 on one light emitting device side and the other light emitting device side adjacent thereto are divided. It is divided into white walls 15. Here, the height H2 from the back surface 10b of the substrate 10 to the bottom surface of the second groove 21 is 0.4 to 0.7 times the height H1 from the back surface 10b of the substrate 10 to the bottom surface of the first groove 20. It is good to set the depth. Even if there is an error in the depth of the half dicing, the white wall 15 can be reliably penetrated, and the substrate 10 can be prevented from penetrating. In addition, leakage of light that passes diagonally downward through the white wall 15 can be further suppressed.

次に、第２溝２１に黒色樹脂を注入して第２溝２１を埋める。黒色樹脂は第２溝２１からはみ出してもよい。ここで、第２溝２１の底面はハーフダイシングによって微細な凹凸が形成されているため、黒色樹脂はこの微細な凹凸に入り込む。そして、黒色樹脂を硬化させて黒壁１６を形成する（図３（ｂ）参照）。黒色樹脂が第２溝２１の底面の微細な凹凸に入り込んだ状態で硬化するため、アンカー効果によって黒壁１６は基板１０から剥離しにくくなる。また、黒壁１６は、第２溝２１に黒色樹脂を注入して形成しているので、第１溝２０側面に露出する白壁１５の全面を黒色樹脂が接して覆うことができる。そのため、白壁１５を透過して漏れる光を効果的に黒壁１６により吸収させることができる。また、第２溝２１を第１溝２０よりも深くしているため、黒壁１６の下面は白壁１５の下面よりも低くなる。そのため、白壁１５を斜め下方に透過してくる光も黒壁１６によって吸収させることができ、光の漏れをさらに抑制することができる。 Next, black resin is injected into the second groove 21 to fill the second groove 21. The black resin may protrude from the second groove 21. Here, since the bottom surface of the second groove 21 is formed with fine irregularities by half dicing, the black resin enters the fine irregularities. Then, the black resin is cured to form the black wall 16 (see FIG. 3B). Since the black resin is cured in a state where it has entered the fine irregularities on the bottom surface of the second groove 21, the black wall 16 is difficult to peel off from the substrate 10 due to the anchor effect. Further, since the black wall 16 is formed by injecting black resin into the second groove 21, the black resin can contact and cover the entire surface of the white wall 15 exposed on the side surface of the first groove 20. Therefore, the light that passes through the white wall 15 and leaks can be effectively absorbed by the black wall 16. Further, since the second groove 21 is deeper than the first groove 20, the lower surface of the black wall 16 is lower than the lower surface of the white wall 15. Therefore, the light transmitted obliquely downward through the white wall 15 can also be absorbed by the black wall 16, and the leakage of light can be further suppressed.

次に、封止樹脂１３表面、白壁１５表面、黒壁１６表面を研磨し、面一となるようにするとともに、発光装置の高さ（基板１０裏面から封止樹脂１３表面までの距離）を調整する（図３（ｃ）参照）。研磨方法は任意であり、機械研磨や化学機械研磨を用いることができる。 Next, the surface of the sealing resin 13, the surface of the white wall 15, and the surface of the black wall 16 are polished so that they are flush with each other, and the height of the light emitting device (distance from the back surface of the substrate 10 to the surface of the sealing resin 13) is adjusted. Adjust (see FIG. 3 (c)). The polishing method is arbitrary, and mechanical polishing or chemical mechanical polishing can be used.

次に、分割予定ラインＬに沿ってダイシングを行う。黒壁１６および基板１０は分割予定ラインＬの左右に分割され、一方の発光装置側の黒壁１６および基板１０と、それに隣接する他方の発光装置の黒壁１６および基板１０に分割される。これにより、個々の発光装置に分割する（図３（ｄ）参照）。以上によって実施例１の発光装置が製造される。 Next, dicing is performed along the scheduled division line L. The black wall 16 and the substrate 10 are divided into the left and right of the scheduled division line L, and are divided into the black wall 16 and the substrate 10 on one light emitting device side and the black wall 16 and the substrate 10 of the other light emitting device adjacent thereto. As a result, it is divided into individual light emitting devices (see FIG. 3D). As described above, the light emitting device of Example 1 is manufactured.

以上、実施例１の発光装置の製造方法によれば、内側が白壁１５、外側が黒壁１６の二重構造の反射壁１２を簡便に作製することができる。また、反射壁１２が基板１０から剥がれることを抑制することができる。 As described above, according to the method for manufacturing the light emitting device of the first embodiment, the reflective wall 12 having a double structure with a white wall 15 on the inside and a black wall 16 on the outside can be easily manufactured. In addition, it is possible to prevent the reflective wall 12 from peeling off from the substrate 10.

本発明の発光装置は、各種光源として利用することができる。 The light emitting device of the present invention can be used as various light sources.

１０：基板
１１：発光素子
１２：反射壁
１３：封止樹脂
１４：段差部
１４ａ：第１段差表面
１４ｂ：第２段差表面
１５：白壁
１６：黒壁
２０：第１溝
２１：第２溝 10: Substrate 11: Light emitting element 12: Reflective wall 13: Encapsulating resin 14: Step portion 14a: First step surface 14b: Second step surface 15: White wall 16: Black wall 20: First groove 21: Second groove

Claims (6)

基板表面上の所定位置に発光素子を実装する実装工程と、
前記基板上および前記発光素子上に封止樹脂を設け、前記発光素子を封止する封止工程と、
各発光装置ごとに分割を予定している分割予定ラインに沿って、ハーフダイシングを行って第１溝を形成し、前記第１溝の深さは、前記封止樹脂を貫通し、かつ前記基板を貫通しない深さに設定する第１溝形成工程と、
前記第１溝に白色樹脂を注入して前記第１溝を埋め、白色樹脂を硬化させて白壁を形成する白壁形成工程と、
前記分割予定ラインに沿って、ハーフダイシングを行って第２溝を形成し、前記第２溝の幅は、前記第１溝の幅よりも狭くし、前記第２溝の深さは、前記白壁を貫通し、かつ前記基板を貫通しない深さに設定し、これにより前記白壁を前記分割予定ラインの左右で分割する第２溝形成工程と、
前記第２溝に黒色樹脂を注入して前記第２溝を埋め、黒色樹脂を硬化させて黒壁を形成する黒壁形成工程と、
前記分割予定ラインに沿ってダイシングを行い、前記黒壁および前記基板を分割予定ラインの左右で分割する分割工程と、
を有することを特徴とする発光装置の製造方法。 The mounting process of mounting the light emitting element at a predetermined position on the substrate surface,
A sealing step of providing a sealing resin on the substrate and the light emitting element and sealing the light emitting element.
Half dicing is performed along the planned division line for each light emitting device to form the first groove, and the depth of the first groove penetrates the sealing resin and the substrate. The first groove forming step of setting the depth so as not to penetrate the
A white wall forming step of injecting a white resin into the first groove to fill the first groove and curing the white resin to form a white wall.
A second groove is formed by half dicing along the planned division line, the width of the second groove is narrower than the width of the first groove, and the depth of the second groove is the white wall. A second groove forming step of dividing the white wall on the left and right sides of the planned division line by setting a depth that penetrates the substrate and does not penetrate the substrate.
A black wall forming step of injecting black resin into the second groove to fill the second groove and curing the black resin to form a black wall.
A division step of dicing along the planned division line and dividing the black wall and the substrate on the left and right sides of the planned division line.
A method for manufacturing a light emitting device, which comprises. 前記黒壁形成工程後、前記分割工程前に、研磨によって前記封止樹脂上面、前記白壁上面、および前記黒壁上面を面一にする研磨工程をさらに有することを特徴とする請求項１に記載の発光装置の製造方法。 The first aspect of claim 1, further comprising a polishing step of making the upper surface of the sealing resin, the upper surface of the white wall, and the upper surface of the black wall flush with each other by polishing after the black wall forming step and before the dividing step. How to manufacture a light emitting device. 前記白色樹脂と前記黒色樹脂は、母材樹脂が同一材料である、ことを特徴とする請求項１または請求項２に記載の発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 1 or 2, wherein the white resin and the black resin are made of the same base material resin. 基板と、前記基板表面上に設けられた発光素子と、前記基板の端部に設けられた反射壁と、前記基板と前記反射壁とで囲まれた内部を埋めるようにして設けられ、前記発光素子を封止する封止樹脂と、を有した発光装置において、
前記反射壁は、内側が白色樹脂からなる白壁、外側が黒色樹脂からなる黒壁の二重構造であり、
前記基板は、端部に段差部を有し、
前記段差部は、内側から外側に向かって下っていく２段の段差構造であって、基板表面よりも１段低くなっている表面である第１段差表面と、前記第１段差表面よりもさらに１段低くなっている表面である第２段差表面とを有し、
前記白壁は、前記第１段差表面上に設けられ、
前記黒壁は、前記第２段差表面上に設けられ、
前記第１段差表面および前記第２段差表面は、前記基板表面よりも算術平均粗さが大きい、
ことを特徴とする発光装置。 The light emitting device is provided so as to fill the inside surrounded by the substrate, the light emitting element provided on the surface of the substrate, the reflective wall provided at the end of the substrate, and the substrate and the reflective wall. In a light emitting device having a sealing resin for sealing an element,
The reflective wall has a double structure of a white wall made of white resin on the inside and a black wall made of black resin on the outside.
The substrate has a stepped portion at the end and has a stepped portion.
The step portion has a two-step structure that descends from the inside to the outside, and is a surface that is one step lower than the substrate surface and a first step surface, and further than the first step surface. It has a second stepped surface, which is one step lower.
The white wall is provided on the surface of the first step, and is provided.
The black wall is provided on the surface of the second step.
The first step surface and the second step surface have a larger arithmetic mean roughness than the substrate surface.
A light emitting device characterized in that. 前記封止樹脂上面、前記白壁上面、および前記黒壁上面は面一である、ことを特徴とする請求項４に記載の発光装置。 The light emitting device according to claim 4, wherein the upper surface of the sealing resin, the upper surface of the white wall, and the upper surface of the black wall are flush with each other. 前記白色樹脂と前記黒色樹脂は、母材樹脂が同一材料である、ことを特徴とする請求項４または請求項５に記載の発光装置。 The light emitting device according to claim 4 or 5, wherein the white resin and the black resin are made of the same base material resin.
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