CN112736182B - Light emitting device and method of manufacturing the same - Google Patents
Light emitting device and method of manufacturing the same Download PDFInfo
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- CN112736182B CN112736182B CN202011090489.8A CN202011090489A CN112736182B CN 112736182 B CN112736182 B CN 112736182B CN 202011090489 A CN202011090489 A CN 202011090489A CN 112736182 B CN112736182 B CN 112736182B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 76
- 239000011347 resin Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light emitting device capable of simply forming a double-structured reflective wall with a white wall on the inner side and a black wall on the outer side, and a manufacturing method thereof. A half cut is made to form a first groove (20). The depth of the first groove (20) is not limited as long as it penetrates the sealing resin (13) and does not penetrate the substrate (10). Then, a white resin is injected into the first groove (20), the first groove (20) is filled, and the white resin is cured to form a white wall (15). Next, half-cutting is performed to form a second groove (21). The width of the second groove (21) is smaller than the width of the first groove (20), and the center of the second groove (21) in the width direction is set to be aligned with the planned dividing line (L). The depth of the second groove (21) is set to a depth that penetrates the white wall (15) and does not penetrate the substrate (10). Next, a black resin is injected into the second groove (21), the second groove (21) is buried, and the black resin is cured to form a black wall (16). Then, dicing is performed to separate the light emitting devices.
Description
Technical Field
The present invention relates to a light-emitting device provided with a reflecting wall surrounding a light-emitting element from the periphery. Further, the present invention relates to a method for producing the same.
Background
Light emitting devices provided with reflective walls surrounding light emitting elements from the periphery are widely known. As a method for manufacturing the reflecting wall, there is a method described in patent document 1. Patent document 1 describes the following method: after the light-emitting element mounted on the substrate is sealed with a resin, a groove is formed at a position surrounding the light-emitting element by half-cutting, and white resin is filled and embedded in the groove, thereby forming a reflecting wall.
Patent documents 2 and 3 disclose light-emitting devices having a double-structured reflective wall with a white resin on the inner side and a black resin on the outer side. By adopting such a double structure, light leakage is suppressed.
Patent document 1: japanese patent laid-open publication No. 2018-22758
Patent document 2: japanese patent application laid-open No. 2015-176946
Patent document 3: japanese patent application laid-open No. 2012-216596
However, the method of patent document 1 has a problem in that light leaks from the reflecting wall, and has a problem in that the light flux is reduced or the contrast is reduced. In addition, a method of simply forming a double-structured reflective wall as in patent documents 2 and 3 has not been established.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a method for manufacturing a light-emitting device capable of simply forming a double-structured reflective wall having a white wall on the inner side and a black wall on the outer side.
The present invention is a method for manufacturing a light-emitting device, comprising: a mounting step of mounting the light emitting element at a predetermined position on the surface of the substrate; a sealing step of providing a sealing resin on the substrate and the light-emitting element to seal the light-emitting element; a first groove forming step of forming a first groove by half-cutting along a dividing line which is predetermined to be divided for each light emitting device, the depth of the first groove being set to a depth which penetrates the sealing resin and which does not penetrate the substrate; a white wall forming step of filling the first groove with white resin, and solidifying the white resin to form a white wall; a second groove forming step of forming a second groove by half-cutting along the line to be divided, the second groove having a width smaller than that of the first groove, the second groove having a depth set to a depth penetrating the white wall and not penetrating the substrate, thereby dividing the swing arm into left and right portions of the line to be divided; a black wall forming step of filling the second groove with black resin and solidifying the black resin to form a black wall; and a dividing step of dividing the black wall and the substrate into left and right parts of the predetermined line by cutting along the predetermined line.
In the present invention, the sealing resin upper surface, the white wall upper surface, and the black wall upper surface may be formed to be coplanar by polishing, which is performed after the black wall forming step and before the dividing step.
In the present invention, the base resin of the white resin and the base resin of the black resin may be the same material.
The present invention is a light-emitting device including a substrate, a light-emitting element provided on a surface of the substrate, a reflecting wall provided at an end portion of the substrate, and a sealing resin provided so as to fill an interior surrounded by the substrate and the reflecting wall and sealing the light-emitting element, wherein the reflecting wall has a double structure in which an inner side is a white wall made of white resin and an outer side is a black wall made of black resin, the substrate has a stepped portion at the end portion, the stepped portion has a two-stage stepped structure in which the stepped portion is lowered from the inner side toward the outer side, the stepped portion has a first stepped surface which is a surface lower than the surface of the substrate and a second stepped surface which is a surface lower than the first stepped surface, the white wall is provided on the first stepped surface, the black wall is provided on the second stepped surface, and arithmetic mean deviation of profiles of the first stepped surface and the second stepped surface is larger than arithmetic mean deviation of profiles of the surface of the substrate.
According to the present invention, a reflective wall having a double structure in which the inside is white resin and the outside is black resin can be easily formed. In addition, the reflection wall can be made less likely to be peeled off from the substrate.
Drawings
Fig. 1 is a diagram showing the structure of a light-emitting device according to embodiment 1.
Fig. 2 is a diagram showing a process for manufacturing the light-emitting device of example 1.
Fig. 3 is a diagram showing a process for manufacturing the light-emitting device of example 1.
Description of the reference numerals
10 … substrate; 11 … light emitting elements; 12 … reflective walls; 13 … sealing resin; 14 … steps; 14a … first step surface; 14b … second step surface; 15 … white wall; 16 … black wall; 20 … first groove; 21 … second groove.
Detailed Description
Specific embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the embodiments.
[ example 1 ]
Fig. 1 is a diagram showing the structure of a light-emitting device according to embodiment 1. As shown in fig. 1, the light-emitting device of embodiment 1 includes a substrate 10, a light-emitting element 11, a reflecting wall 12, and a sealing resin 13.
The substrate 10 is a rectangular plate-like member. The material of the substrate 10 is ceramic, glass epoxy resin, or the like. A wiring pattern (not shown) is formed on the surface 10a of the substrate 10. An electrode pattern (not shown) for connection to an external circuit is formed on the back surface 10b of the substrate 10. The front-side wiring pattern and the back-side electrode pattern are connected via holes (not shown) formed in the substrate 10.
A stepped portion 14 is provided on four sides of an end portion of the rectangular region of the substrate 10. The stepped portion 14 has a two-stage stepped structure that descends from the inside toward the outside of the light emitting device. By this step portion 14, a surface one level lower than the surface 10a of the substrate 10 is set as a first step surface 14a, and a surface one level lower than the first step surface 14a is set as a second step surface 14b. The first step surface 14a and the second step surface 14b are substantially parallel to the surface 10a of the substrate 10, and the second step surface 14b is continuous with the side surface of the substrate 10. The arithmetic mean deviation of the contours of the first step surface 14a and the second step surface 14b is larger than the arithmetic mean deviation of the contours of the surface 10a of the substrate 10.
The light emitting element 11 is mounted on the surface 10a of the substrate 10, and the wiring pattern on the surface 10a of the substrate 10 and the electrode of the light emitting element 11 are connected by a wire, solder, bump, or the like. The light-emitting element 11 may be made of any semiconductor material and have any structure, regardless of the emission color. The light emitting elements 11 need not be one, and a plurality of light emitting elements 11 may be mounted on the surface 10a of the substrate 10. For example, the light-emitting elements 11 emitting blue light, the light-emitting elements 11 emitting green light, and the light-emitting elements 11 emitting red light may be provided in one group, and one to a plurality of groups may be mounted. By controlling the respective outputs of blue, green, and red, a light-emitting device capable of emitting an arbitrary light-emitting color can be realized. Further, electronic components other than the light emitting element 11 may be mounted on the surface of the substrate 10. For example, a driving circuit, a temperature protection element, and the like of the light emitting element 11 may be mounted on the surface 10a of the substrate 10 together with the light emitting element 11.
The reflection wall 12 is provided in a frame-like wall shape above the step portion 14 of the substrate 10. The reflecting wall 12 has a double structure, and the inside of the light emitting device is a white wall 15 and the outside is a black wall 16. The white wall 15 and the black wall 16 are joined. The white wall 15 and the black wall 16 are both vertically plate-shaped (wall-shaped).
The white wall 15 is provided above the first step surface 14a in the step portion 14. The first step surface 14a is rough and has minute irregularities into which the white wall 15 enters, and therefore, the white wall 15 is less likely to be peeled off from the substrate 10 by the anchor effect.
The white wall 15 is prepared by mixing a resin such as silicone resin, epoxy resin, acrylic resin, etc. with TiO 2 、ZrO 2 、Al 2 O 3 、SiO 2 White resin obtained from light reflecting material such as particles. The white wall 15 reflects light emitted laterally from the light-emitting element 11, thereby improving the output of the light-emitting device. In the present invention, "white" means a color having a reflectance sufficiently high for light from the light-emitting element 11, for example, a reflectance of 80% or more.
The black wall 16 is located at a position contacting the outside of the white wall 15, and is provided on the surface of the second step surface 14b in the step portion 14. In addition, the upper surface of the black wall 16 is coplanar with the upper surface of the white wall 15, and the outer side surface of the black wall 16 is coplanar with the side surface of the substrate 10. The second step surface 14b is rough and has minute irregularities into which the black wall 16 enters, and therefore, the black wall 16 is not easily peeled off from the substrate 10 by the anchor effect.
The black wall 16 is made of a black resin obtained by mixing a light absorbing material such as carbon black or carbon nanotubes with a resin such as silicone. From the viewpoint of ease of production and cost reduction, it is preferable that the base resin is the same material for the white wall 15 and the black wall 16. In the present invention, "black" means a color having a sufficiently high absorptance with respect to light from the light emitting element 11, for example, 80% or more.
The reason for providing the black wall 16 is as follows: most of the light emitted laterally from the light-emitting element 11 is reflected by the white wall 15, but a part of the light passes through the white wall 15. The light beam of the light-emitting device is reduced or the contrast is reduced due to the light leaking from the side of the light-emitting device. Therefore, the black wall 16 absorbs light transmitted through the white wall 15, thereby suppressing light leakage from the side, and improving the contrast and elevation of the light beam. In particular, the black wall 16 completely covers the outer side surface of the Bai Bi, and thus leakage of light can be further suppressed.
In addition, the white wall 15 is provided above the first step surface 14a, and the black wall 16 is provided above the second step surface 14b, so that the lower surface of the black wall 16 is lower than the lower surface of the white wall 15. Therefore, the black wall 16 can absorb light transmitted obliquely downward through the white wall 15, and leakage of light can be further suppressed.
The height H1 from the back surface 10b of the substrate 10 to the first step surface 14a (the lower surface of the white wall 15) is preferably 0.3 to 0.7 times the thickness H0 of the substrate 10. The reason for this is described in the manufacturing process described later.
In addition, the height H2 from the back surface 10b of the substrate 10 to the second step surface 14b (the lower surface of the black wall 16) is preferably 0.4 to 0.7 times that of H1. If the range is within this range, the leakage of light transmitted obliquely downward through the white wall 15 can be further suppressed.
The thickness of the white wall 15 may be in a range that allows the reflectance of light from the light-emitting element 11 to be sufficiently high and the transmittance to be sufficiently reduced. For example, the thickness is preferably set so that the reflectance of light incident perpendicularly to Bai Bi is 80% or more and the transmittance thereof is 10% or less.
The thickness of the black wall 16 may be within a range that allows the light transmitted through the white wall 15 to have a high absorption rate and sufficiently reduce the transmittance. For example, the thickness is preferably set so that the absorptivity of light incident perpendicularly to the black wall 16 is 80% or more and the transmittance is 10% or less.
The sealing resin 13 is provided so as to fill the inside surrounded by the surface 10a of the substrate 10 and the reflecting wall 12, and has a uniform thickness. The light emitting element 11 is sealed with the sealing resin 13. In addition, the surface of the sealing resin 13 is coplanar with the upper surface of the reflection wall 12. Therefore, the light-emitting device of embodiment 1 has a rectangular parallelepiped shape as a whole.
The material of the sealing resin 13 is any resin material that can transmit light emitted from the light emitting element 11, such as silicone resin or epoxy resin. Any material such as a light diffusion material, a fluorescent material, and a heat diffusion material may be added to the sealing resin 13.
As described above, in the light-emitting device of example 1, the adhesion between the reflective wall 12 and the substrate 10 is improved due to the anchor effect, and the reflective wall 12 can be prevented from being peeled off from the substrate 10 by the application of stress. Further, the black wall 16 made of black resin covers the entire outer side surface of the white wall 15 made of white resin, and the lower surface of the black wall 16 is lower than the lower surface of the white wall, so that the leakage of light from the reflection wall 12 is suppressed, and the light flux of the light emitting device is improved.
Next, a method for manufacturing the light-emitting device of embodiment 1 will be described with reference to fig. 2 and 3.
First, the light emitting element 11 is mounted at a predetermined position in a rectangular region on the surface 10a of the substrate 10. Next, the sealing resin 13 is applied to a uniform thickness over the surface 10a of the substrate 10 and over the light emitting element 11, the light emitting element 11 is sealed, and the sealing resin 13 is cured by heat treatment (see fig. 2 (a)). The method of mounting the light emitting element 11 can be any method depending on the structure of the light emitting element 11.
Next, in a subsequent step, half-cutting is performed from the surface side of the sealing resin 13 along a grid-like line (line L for division) for which division is scheduled for each light-emitting device, thereby forming a first groove 20 (see fig. 2 b). The corners of the first groove 20 may also be curved. The lines L are in a grid shape in a plan view. By this half-dicing, minute irregularities are formed on the bottom surface of the first groove 20, and the surface 10a of the substrate 10 is roughened. Further, the bottom surface of the first groove 20 becomes the first step surface 14a of the step portion 14.
The width of the first groove 20 is set to be a width obtained by adding up 2 times the width of the reflecting wall 12 and the cutting amount of the cutter for the subsequent element division, and the center in the width direction of the first groove 20 is set to be aligned with the division scheduled line L.
The depth of the first groove 20 may be deeper than the depth that the sealing resin 13 penetrates to reach the surface 10a of the substrate 10, and may not penetrate the substrate 10. For example, the depth is set so that the height H1 from the back surface l0b of the substrate 10 to the bottom surface of the first groove 20 is preferably 0.3 to 0.7 times the thickness H0 of the substrate 10. If the depth falls within this range, the sealing resin 13 can be reliably penetrated even if there is an error in the half-cut depth, and the substrate 10 can be prevented from being penetrated. Further, the substrate 10 can be prevented from being thinned, and thus from being bent, curved, or broken.
Next, white resin is injected into the first tank 20, and the first tank 20 is buried. White resin may also overflow from the first tank 20. Here, since the bottom surface of the first groove 20 is formed with minute irregularities due to half-cutting, the white resin enters the minute irregularities. Then, the white resin is cured to form white walls 15 (see fig. 2 (c)). The white resin is cured in a state of minute irregularities entering the bottom surface of the first groove 20, and therefore, the white wall 15 is not easily peeled off from the substrate 10 due to the anchor effect.
Next, half-cutting is performed from the upper surface side of the white wall 15 along the line L to be divided, thereby forming a second groove 21 (see fig. 3 (a)). The corners of the second groove 21 may also be curved. Due to the half-dicing, minute irregularities are formed on the bottom surface of the second groove 21, and the substrate 10 is roughened with respect to the surface 10 a. Further, the bottom surface of the second groove 21 becomes the second step surface 14b of the step portion 14.
The width of the second groove 21 is smaller than the width of the first groove 20, and the width of the second groove 21 is set so that the center in the width direction of the second groove 21 coincides with the line L to divide. The width of the second groove 21 is a width obtained by adding up 2 times the width of the black wall 16 and the cutting amount of a cutter for dividing elements described later.
The second groove 21 has a depth penetrating the white wall 15 and deeper than the first groove 20 and does not penetrate the substrate 10.
By setting the width and depth of the second groove 21 in this way, the white wall 15 is divided into left and right portions of the predetermined line L, and the white wall 15 is divided into the white wall 15 on one light emitting device side and the white wall 15 on the other light emitting device side adjacent thereto. Here, the depth is set so that the height H2 from the back surface l0b of the substrate 10 to the bottom surface of the second groove 21 is preferably 0.4 to 0.7 times the height H1 from the back surface 10b of the substrate 10 to the bottom surface of the first groove 20. Even if there is an error in the half-cut depth, the white wall 15 can be reliably penetrated, and the substrate 10 can be not penetrated. In addition, leakage of light transmitted obliquely below the white wall 15 can be further suppressed.
Next, a black resin is injected into the second groove 21, and the second groove 21 is buried. The black resin may also overflow from the second groove 21. Here, since the bottom surface of the second groove 21 is formed with minute irregularities due to half-cutting, the black resin enters the minute irregularities. Then, the black resin is cured to form a black wall 16 (see fig. 3 (b)). The black resin is cured in a state of minute irregularities entering the bottom surface of the second groove 21, and therefore, the black wall 16 is not easily peeled off from the substrate 10 due to the anchor effect. Further, the black wall 16 is formed by injecting black resin into the second groove 21, and therefore, the black resin can contact and cover the entire surface of the Bai Bi exposed to the side surface of the first groove 20. Therefore, the light leaked through the white wall 15 can be effectively further absorbed by the black wall 16. Further, the second groove 21 is made deeper than the first groove 20, and therefore the lower surface of the black wall 16 is lower than the lower surface of the white wall 15. Therefore, light passing obliquely downward through the white wall 15 can be absorbed by the black wall 16, and leakage of light can be further suppressed.
Next, the sealing resin 13 surface, the white wall 15 surface, and the black wall 16 surface are polished so as to be coplanar, and the height of the light emitting device (the distance from the back surface of the substrate 10 to the surface of the sealing resin 13) is adjusted (see fig. 3 (c)). The polishing method is arbitrary, and mechanical polishing and chemical mechanical polishing can be used.
Next, cutting is performed along the line L to be divided. The black wall 16 and the substrate 10 are divided into left and right parts of the line L to be divided, and are divided into the black wall 16 and the substrate 10 on the side of one light emitting device and the black wall 16 and the substrate 10 of the other light emitting device adjacent thereto. This is divided into individual light emitting devices (see fig. 3 (d)). The light emitting device of embodiment 1 was manufactured in the above manner.
As described above, according to the method of manufacturing the light-emitting device of embodiment 1, the reflective wall 12 having the double structure including the white wall 15 on the inner side and the black wall 16 on the outer side can be manufactured easily. In addition, peeling of the reflecting wall 12 from the substrate 10 can be suppressed.
Industrial applicability
The light-emitting device of the present invention can be used as various light sources.
Claims (6)
1. A method for manufacturing a light-emitting device is characterized in that,
the method for manufacturing the light-emitting device comprises the following steps:
a mounting step of mounting the light emitting element at a predetermined position on the surface of the substrate;
a sealing step of providing a sealing resin on the substrate and on the light-emitting element to seal the light-emitting element;
a first groove forming step of forming a first groove by half-cutting along a predetermined dividing line for dividing each light emitting device, the first groove having a depth set to a depth penetrating the sealing resin and not penetrating the substrate;
a white wall forming step of injecting white resin into the first groove, filling the first groove, and solidifying the white resin to form a white wall;
a second groove forming step of forming a second groove by half-cutting along the line to be divided, the second groove having a width smaller than that of the first groove, and a depth set to a depth penetrating the white wall and deeper than the first groove and not penetrating the substrate, thereby dividing the white wall into left and right parts of the line to be divided;
a black wall forming step of injecting a black resin into the second groove, burying the second groove, and solidifying the black resin to form a black wall; and
and a dividing step of dividing the black wall and the substrate into left and right parts of the predetermined dividing line by cutting along the predetermined dividing line.
2. The method of manufacturing a light-emitting device according to claim 1, wherein,
the method further comprises a polishing step of forming the sealing resin upper surface, the white wall upper surface, and the black wall upper surface to be coplanar by polishing after the black wall forming step and before the dividing step.
3. The method for manufacturing a light-emitting device according to claim 1 or 2, wherein,
the base resin of the white resin and the black resin are the same material.
4. A light-emitting device comprising a substrate, a light-emitting element provided on the surface of the substrate, a reflecting wall provided at an end portion of the substrate, and a sealing resin filled in an interior surrounded by the substrate and the reflecting wall and sealing the light-emitting element,
the reflecting wall has a double structure in which the inner side is a white wall made of white resin and the outer side is a black wall made of black resin,
the base plate has a stepped portion at an end portion,
the step portion is a two-stage step structure descending from the inner side toward the outer side, having a first step surface as a surface one stage lower than the substrate surface and a second step surface as a surface one stage lower than the first step surface,
the white wall is disposed over the first step surface,
the black wall is disposed over the second step surface,
the arithmetic mean deviation of the profiles of the first step surface and the second step surface is larger than the arithmetic mean deviation of the profiles of the substrate surface.
5. A light-emitting apparatus as recited in claim 4, wherein,
the sealing resin upper surface, the white wall upper surface, and the black wall upper surface are coplanar.
6. A light-emitting device according to claim 4 or 5, wherein,
the base resin of the white resin and the black resin are the same material.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2019-188268 | 2019-10-14 | ||
| JP2019188268A JP7196813B2 (en) | 2019-10-14 | 2019-10-14 | Light emitting device and manufacturing method thereof |
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| CN112736182A CN112736182A (en) | 2021-04-30 |
| CN112736182B true CN112736182B (en) | 2024-03-08 |
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| CN107994109A (en) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | A kind of COB display modules and its manufacture method |
| CN117317035A (en) * | 2023-10-09 | 2023-12-29 | 讯芯电子科技（中山）有限公司 | Light sensor packaging structure and packaging method thereof |
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| CN108028303A (en) * | 2015-09-18 | 2018-05-11 | 西铁城电子株式会社 | Light-emitting device |
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| JP5423475B2 (en) * | 2009-03-06 | 2014-02-19 | 日亜化学工業株式会社 | Manufacturing method of optical semiconductor device |
| JP5896758B2 (en) * | 2012-01-25 | 2016-03-30 | シチズン電子株式会社 | LED light emitting device |
| WO2014185693A1 (en) * | 2013-05-13 | 2014-11-20 | 서울반도체 주식회사 | Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same |
| CN204632804U (en) * | 2015-05-29 | 2015-09-09 | 广州市鸿利光电股份有限公司 | Wafer-level package LED |
| CN107994109A (en) * | 2016-10-27 | 2018-05-04 | 佛山市国星光电股份有限公司 | A kind of COB display modules and its manufacture method |
| JP6696521B2 (en) * | 2017-05-12 | 2020-05-20 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
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| JP2011138849A (en) * | 2009-12-28 | 2011-07-14 | Nichia Corp | Light emitting device and method of manufacturing the same |
| CN108028303A (en) * | 2015-09-18 | 2018-05-11 | 西铁城电子株式会社 | Light-emitting device |
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| JP7196813B2 (en) | 2022-12-27 |
| JP2021064698A (en) | 2021-04-22 |
| CN112736182A (en) | 2021-04-30 |
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