JP2021052106A - Stem - Google Patents

Stem Download PDF

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Publication number
JP2021052106A
JP2021052106A JP2019174482A JP2019174482A JP2021052106A JP 2021052106 A JP2021052106 A JP 2021052106A JP 2019174482 A JP2019174482 A JP 2019174482A JP 2019174482 A JP2019174482 A JP 2019174482A JP 2021052106 A JP2021052106 A JP 2021052106A
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Japan
Prior art keywords
stem
hole
fixing member
lead
plating film
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Granted
Application number
JP2019174482A
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Japanese (ja)
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JP7266501B2 (en
Inventor
海沼　正夫
Masao Kainuma
正夫 海沼
明洋 松末
Akihiro Matsusue
明洋 松末
田中　秀幸
Hideyuki Tanaka
秀幸 田中
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Shinko Electric Industries Co Ltd
Mitsubishi Electric Corp
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Shinko Electric Industries Co Ltd
Mitsubishi Electric Corp
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Priority to JP2019174482A priority Critical patent/JP7266501B2/en
Priority to CN202010174790.0A priority patent/CN112563211A/en
Priority to KR1020200031803A priority patent/KR20210036242A/en
Publication of JP2021052106A publication Critical patent/JP2021052106A/en
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Publication of JP7266501B2 publication Critical patent/JP7266501B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

To suppress the occurrence of leaks in a through hole.SOLUTION: A stem includes a stem body with a through hole, a nickel-plated film formed on the surface of the stem body, including the inner wall surface of the through hole, and having irregularities or voids, and a fixing member that is provided in the through hole of the stem body to fix the lead, a part of the fixing member being stored in the irregularities or voids of the nickel-plated film in the through hole.SELECTED DRAWING: Figure 3

Description

本発明は、ステムに関する。 The present invention relates to a stem.

光素子等の半導体素子が搭載されるステムは、貫通孔が形成されたステム本体が形成され、リードがガラス等の絶縁性材料からなる固定部材を介してステム本体の貫通孔に固定されることにより、製造される。 For a stem on which a semiconductor element such as an optical element is mounted, a stem body having a through hole is formed, and a lead is fixed to the through hole of the stem body via a fixing member made of an insulating material such as glass. Manufactured by.

固定部材は、ステム本体の貫通孔に嵌め込まれ、リードが挿通される。そして、固定部材が溶融された後に固化されることにより、リードが固定部材を介してステム本体の貫通孔に固定される。ステム本体の貫通孔は、原則として円形状に形成されるが、例えば長孔形状などの非円形状に形成される場合がある。 The fixing member is fitted into the through hole of the stem body, and the lead is inserted. Then, the reed is fixed to the through hole of the stem body via the fixing member by being solidified after the fixing member is melted. The through hole of the stem body is formed in a circular shape in principle, but may be formed in a non-circular shape such as an elongated hole shape.

特開２００５−１９１０８８号公報Japanese Unexamined Patent Publication No. 2005-11088

ところで、ステム本体に非円形状の貫通孔が形成されたステムでは、貫通孔に嵌め込まれた固定部材に対してステム本体からの応力が均等に付与されない。すなわち、固定部材には、溶融後の固化過程において、熱膨張係数が互いに異なる固定部材及びステム本体の膨張及び収縮によりステム本体から応力が付与されるが、この応力には非円形状の貫通孔の内壁面に沿って周方向にばらつきが生じることになる。 By the way, in a stem in which a non-circular through hole is formed in the stem body, stress from the stem body is not evenly applied to the fixing member fitted in the through hole. That is, in the solidification process after melting, stress is applied to the fixing member from the stem body due to expansion and contraction of the fixing member and the stem body having different coefficients of thermal expansion, and this stress is given to a non-circular through hole. There will be variations in the circumferential direction along the inner wall surface of the.

このようにステム本体から固定部材へ付与される応力にばらつきが生じた状態で、ステム本体に対して半導体素子の実装や半導体素子を保護するキャップの設置等が行われると、熱や衝撃によりステム本体と固定部材との間に隙間が生じることがある。この結果、固定部材が嵌め込まれた非円形状の貫通孔において、ステム本体と固定部材との間の隙間から外気が流入するリークが発生するという問題がある。貫通孔でのリークの発生は、ステム本体に実装された半導体素子の品質を劣化させる要因となり、好ましくない。 When the semiconductor element is mounted on the stem body or a cap that protects the semiconductor element is installed on the stem body in a state where the stress applied from the stem body to the fixing member varies in this way, the stem is subjected to heat or impact. A gap may occur between the main body and the fixing member. As a result, there is a problem that a leak in which outside air flows in from the gap between the stem body and the fixing member occurs in the non-circular through hole into which the fixing member is fitted. The occurrence of a leak in the through hole causes deterioration in the quality of the semiconductor element mounted on the stem body, which is not preferable.

開示の技術は、上記に鑑みてなされたものであって、貫通孔でのリークの発生を抑制することができるステムを提供することを目的とする。 The technique disclosed is made in view of the above, and an object of the present invention is to provide a stem capable of suppressing the occurrence of a leak in a through hole.

本願の開示するステムは、一つの態様において、貫通孔が形成されたステム本体と、前記貫通孔の内壁面を含む、前記ステム本体の表面に形成され、凹凸又は空隙を有するニッケルめっき膜と、前記ステム本体の貫通孔に設けられてリードを固定し、前記貫通孔において一部が前記ニッケルめっき膜の凹凸又は空隙に格納される固定部材と、を有する。 In one embodiment, the stem disclosed in the present application includes a stem body in which a through hole is formed, a nickel plating film formed on the surface of the stem body including the inner wall surface of the through hole, and having irregularities or voids. It has a fixing member provided in the through hole of the stem body to fix the lead, and a part of the lead is stored in the unevenness or void of the nickel plating film in the through hole.

本願の開示するステムの一つの態様によれば、貫通孔でのリークの発生を抑制することができる、という効果を奏する。 According to one aspect of the stem disclosed in the present application, there is an effect that the occurrence of leakage in the through hole can be suppressed.

図１は、実施例に係るステムの構成の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of the configuration of the stem according to the embodiment. 図２は、ステムを上方向から見た平面図である。FIG. 2 is a plan view of the stem viewed from above. 図３は、固定部材の設置態様の一例を示す図である。FIG. 3 is a diagram showing an example of an installation mode of the fixing member. 図４は、Ｎｉめっき膜の厚さに対する、ステム本体の表面状態の一例を示す図である。FIG. 4 is a diagram showing an example of the surface state of the stem body with respect to the thickness of the Ni plating film.

以下に、本願の開示するステムの実施例を図面に基づいて詳細に説明する。なお、この実施例により開示技術が限定されるものではない。 Hereinafter, examples of the stem disclosed in the present application will be described in detail with reference to the drawings. The disclosed technology is not limited by this embodiment.

［実施例］
［ステムの構成］
図１は、実施例に係るステム１の構成の一例を示す断面図である。以下では、説明の便宜上、図１における紙面に向かって上側の面を上面と呼び、紙面に向かって下側の面を下面と呼ぶ。ただし、ステム１は、例えば上下反転して用いられてもよく、任意の姿勢で用いられてよい。図１に示すように、ステム１は、ステム本体１０と、固定部材２０と、電気信号用リード３０と、固定部材４０と、給電用リード５０とを有する。 [Example]
[Stem configuration]
FIG. 1 is a cross-sectional view showing an example of the configuration of the stem 1 according to the embodiment. Hereinafter, for convenience of explanation, the surface on the upper side facing the paper surface in FIG. 1 is referred to as an upper surface, and the surface on the lower side facing the paper surface is referred to as a lower surface. However, the stem 1 may be used upside down, for example, and may be used in any posture. As shown in FIG. 1, the stem 1 has a stem main body 10, a fixing member 20, an electric signal lead 30, a fixing member 40, and a power feeding lead 50.

ステム本体１０は、例えば、金属により円板状に形成され、ステム１を構成する各種の部品を搭載する基材である。ステム本体１０を形成する金属としては、例えば鉄が用いられる。ステム本体１０の上面には、光素子等の半導体素子が搭載される素子搭載領域Ｒが形成されている。ステム本体１０の上面のうち素子搭載領域Ｒを囲む位置には、ステム本体１０を厚さ方向に貫通する複数のリード用貫通孔１０ａ、１０ｂが形成されている。 The stem body 10 is, for example, a base material formed of metal in a disk shape and on which various components constituting the stem 1 are mounted. As the metal forming the stem body 10, for example, iron is used. An element mounting region R on which a semiconductor element such as an optical element is mounted is formed on the upper surface of the stem body 10. A plurality of lead through holes 10a and 10b that penetrate the stem body 10 in the thickness direction are formed at positions on the upper surface of the stem body 10 that surround the element mounting region R.

図２は、ステム１を上方向から見た平面図である。図２には、円板状にステム本体１０の上面が示されている。図２のＩ−Ｉ線における断面が図１に示すステム１の断面に相当する。図２に示すように、ステム本体１０には、リード用貫通孔１０ａと、リード用貫通孔１０ｂとが形成されている。リード用貫通孔１０ａは、円形状に形成されており、固定部材２０を介して１つの電気信号用リード３０が固定されている。一方、リード用貫通孔１０ｂは、非円形状に形成されている。本実施例では、リード用貫通孔１０ｂは、長孔形状に形成されている。リード用貫通孔１０ｂには、固定部材４０を介して３つの給電用リード５０が固定されている。１つのリード用貫通孔１０ｂに３つの給電用リード５０が固定されることにより、リード間のピッチが小さくなり、リードの実装密度が向上する。 FIG. 2 is a plan view of the stem 1 as viewed from above. In FIG. 2, the upper surface of the stem main body 10 is shown in a disk shape. The cross section taken along the line II of FIG. 2 corresponds to the cross section of the stem 1 shown in FIG. As shown in FIG. 2, the stem main body 10 is formed with a lead through hole 10a and a lead through hole 10b. The lead through hole 10a is formed in a circular shape, and one electric signal lead 30 is fixed via the fixing member 20. On the other hand, the lead through hole 10b is formed in a non-circular shape. In this embodiment, the lead through hole 10b is formed in an elongated hole shape. Three power feeding leads 50 are fixed to the lead through holes 10b via a fixing member 40. By fixing the three power feeding leads 50 to one lead through hole 10b, the pitch between the leads is reduced and the mounting density of the leads is improved.

また、リード用貫通孔１０ａ、１０ｂの内壁面を含む、ステム本体１０の表面には、ステム本体１０の表面の腐食を防止するためのニッケル（Ｎｉ）めっき膜が形成されている。Ｎｉめっき膜の詳細については、後述する。 Further, a nickel (Ni) plating film for preventing corrosion of the surface of the stem main body 10 is formed on the surface of the stem main body 10 including the inner wall surfaces of the lead through holes 10a and 10b. Details of the Ni plating film will be described later.

図１に戻る。固定部材２０は、ステム本体１０を形成する金属よりも熱膨張係数が小さい絶縁性材料により形成され、ステム本体１０のリード用貫通孔１０ａに設けられている。固定部材２０を形成する絶縁性材料としては、例えばガラスが用いられる。固定部材２０は、電気信号用リード３０が挿通される孔を有し、該孔に挿通される電気信号用リード３０をリード用貫通孔１０ａに固定する。具体的には、固定部材２０は、ステム本体１０のリード用貫通孔１０ａに嵌め込まれ、電気信号用リード３０が挿通される。そして、固定部材２０が溶融された後に固化されることにより、電気信号用リード３０が固定部材２０を介してステム本体１０のリード用貫通孔１０ａに固定される。 Return to FIG. The fixing member 20 is made of an insulating material having a coefficient of thermal expansion smaller than that of the metal forming the stem body 10, and is provided in the lead through hole 10a of the stem body 10. As the insulating material forming the fixing member 20, for example, glass is used. The fixing member 20 has a hole through which the electric signal lead 30 is inserted, and the electric signal lead 30 inserted through the hole is fixed to the lead through hole 10a. Specifically, the fixing member 20 is fitted into the lead through hole 10a of the stem main body 10, and the electric signal lead 30 is inserted therethrough. Then, the fixing member 20 is melted and then solidified, so that the electric signal lead 30 is fixed to the lead through hole 10a of the stem main body 10 via the fixing member 20.

電気信号用リード３０は、例えば、円柱状に形成されており、ステム本体１０の素子搭載領域Ｒ上の半導体素子へ供給される高周波信号である電気信号を伝送する。電気信号用リード３０は、ステム本体１０のリード用貫通孔１０ａに固定部材２０を介して固定されている。 The electric signal reed 30 is formed in a columnar shape, for example, and transmits an electric signal which is a high frequency signal supplied to a semiconductor element on the element mounting region R of the stem main body 10. The electric signal lead 30 is fixed to the lead through hole 10a of the stem main body 10 via a fixing member 20.

固定部材４０は、ステム本体１０を形成する金属よりも熱膨張係数が小さい絶縁性材料により形成され、ステム本体１０のリード用貫通孔１０ｂに設けられている。固定部材４０を形成する絶縁性材料としては、例えばガラスが用いられる。固定部材４０は、給電用リード５０が挿通される孔を有し、該孔に挿通される給電用リード５０をリード用貫通孔１０ｂに固定する。具体的には、固定部材４０は、ステム本体１０のリード用貫通孔１０ｂに嵌め込まれ、給電用リード５０が挿通される。そして、固定部材４０が溶融された後に固化されることにより、給電用リード５０が固定部材４０を介してステム本体１０のリード用貫通孔１０ｂに固定される。固定部材４０の設置態様については、後述する。 The fixing member 40 is made of an insulating material having a coefficient of thermal expansion smaller than that of the metal forming the stem body 10, and is provided in the lead through hole 10b of the stem body 10. As the insulating material forming the fixing member 40, for example, glass is used. The fixing member 40 has a hole through which the power feeding lead 50 is inserted, and the power feeding lead 50 inserted through the hole is fixed to the lead through hole 10b. Specifically, the fixing member 40 is fitted into the lead through hole 10b of the stem main body 10, and the power feeding lead 50 is inserted through the stem body 10. Then, the fixing member 40 is melted and then solidified, so that the power feeding lead 50 is fixed to the lead through hole 10b of the stem main body 10 via the fixing member 40. The installation mode of the fixing member 40 will be described later.

給電用リード５０は、例えば、円柱状に形成されており、ステム本体１０の素子搭載領域Ｒに搭載された半導体素子を駆動するための電流を供給するためのリードである。給電用リード５０は、ステム本体１０のリード用貫通孔１０ｂに固定部材４０を介して固定されている。 The power feeding lead 50 is formed in a columnar shape, for example, and is a lead for supplying a current for driving a semiconductor element mounted in the element mounting region R of the stem main body 10. The power feeding lead 50 is fixed to the lead through hole 10b of the stem main body 10 via a fixing member 40.

［固定部材の設置態様］
次に、図３を参照して、固定部材４０の設置態様について詳細に説明する。図３は、固定部材４０の設置態様の一例を示す図である。固定部材４０は、ステム本体１０のリード用貫通孔１０ｂに設けられて給電用リード５０をリード用貫通孔１０ｂに固定する。リード用貫通孔１０ｂは、長孔形状（図２参照）に形成されている。 [Installation mode of fixing member]
Next, with reference to FIG. 3, the installation mode of the fixing member 40 will be described in detail. FIG. 3 is a diagram showing an example of an installation mode of the fixing member 40. The fixing member 40 is provided in the lead through hole 10b of the stem main body 10 and fixes the power supply lead 50 in the lead through hole 10b. The lead through hole 10b is formed in an elongated hole shape (see FIG. 2).

リード用貫通孔１０ｂの内壁面を含む、ステム本体１０の表面には、Ｎｉめっき膜７０が形成されている。Ｎｉめっき膜７０は、ステム本体１０の表面を部分的に露出させる空隙７０ａを有する。例えば、Ｎｉめっき膜７０は、Ｎｉめっき膜７０を形成する複数の結晶粒間の境界である結晶粒界の位置に空隙７０ａを有する。そして、リード用貫通孔１０ｂにおいて、固定部材４０の一部がＮｉめっき膜７０の空隙７０ａに格納されている。さらに、固定部材４０の一部が空隙７０ａから露出するステム本体１０の表面に接触している。 A Ni plating film 70 is formed on the surface of the stem body 10 including the inner wall surface of the lead through hole 10b. The Ni plating film 70 has a gap 70a that partially exposes the surface of the stem body 10. For example, the Ni plating film 70 has a void 70a at a position of a crystal grain boundary, which is a boundary between a plurality of crystal grains forming the Ni plating film 70. Then, in the lead through hole 10b, a part of the fixing member 40 is stored in the gap 70a of the Ni plating film 70. Further, a part of the fixing member 40 is in contact with the surface of the stem body 10 exposed from the gap 70a.

また、Ｎｉめっき膜７０は、ステム本体１０を形成する金属がＮｉめっき膜７０に対して拡散して形成された凸部７０ｂを有する。例えば、Ｎｉめっき膜７０は、空隙７０ａが形成されてない領域に凸部７０ｂを有する。凸部７０ｂは、空隙７０ａと共にステム本体１０に所定の表面粗さを付与している。ステム本体１０の表面粗さ（例えば算術平均粗さＲａ）は、例えば、２．５〜３．４μｍの範囲内である。そして、固定部材４０は、外周面の、Ｎｉめっき膜７０の凸部７０ｂに対応する位置に、該凸部７０ｂが格納される凹部を有する。 Further, the Ni plating film 70 has a convex portion 70b formed by diffusing the metal forming the stem body 10 with respect to the Ni plating film 70. For example, the Ni plating film 70 has a convex portion 70b in a region where the void 70a is not formed. The convex portion 70b imparts a predetermined surface roughness to the stem main body 10 together with the gap 70a. The surface roughness of the stem body 10 (for example, arithmetic mean roughness Ra) is, for example, in the range of 2.5 to 3.4 μm. The fixing member 40 has a concave portion on the outer peripheral surface where the convex portion 70b is stored at a position corresponding to the convex portion 70b of the Ni plating film 70.

ところで、ステム本体１０に例えば長孔形状などの非円形状にリード用貫通孔１０ｂが形成される場合、リード用貫通孔１０ｂに嵌め込まれた固定部材４０に対してステム本体１０からの応力が均等に付与されない。すなわち、固定部材４０には、溶融後の固化過程において、熱膨張係数が互いに異なる固定部材４０及びステム本体１０の膨張及び固化によりステム本体１０から応力が付与されるが、この応力にはリード用貫通孔１０ｂの内壁面に沿って周方向にばらつきが生じる。 By the way, when the lead through hole 10b is formed in the stem body 10 in a non-circular shape such as an elongated hole shape, the stress from the stem body 10 is equal to the fixing member 40 fitted in the lead through hole 10b. Not granted to. That is, in the solidification process after melting, stress is applied to the fixing member 40 from the stem body 10 due to expansion and solidification of the fixing member 40 and the stem body 10 having different coefficients of thermal expansion. Variation occurs in the circumferential direction along the inner wall surface of the through hole 10b.

このようにステム本体１０から固定部材４０へ付与される応力にばらつきが生じた状態で、ステム本体１０に対して半導体素子の実装や半導体素子を保護するキャップの設置等が行われると、熱や衝撃によりステム本体１０と固定部材４０との間に隙間が生じる。この結果、固定部材４０が嵌め込まれた非円形状のリード用貫通孔１０ｂにおいて、ステム本体１０と固定部材４０との間の隙間から外気が流入するリークが発生するという問題がある。 In a state where the stress applied from the stem body 10 to the fixing member 40 varies in this way, if the semiconductor element is mounted on the stem body 10 or a cap that protects the semiconductor element is installed, heat or the like is generated. The impact creates a gap between the stem body 10 and the fixing member 40. As a result, in the non-circular lead through hole 10b into which the fixing member 40 is fitted, there is a problem that a leak in which outside air flows in from the gap between the stem main body 10 and the fixing member 40 occurs.

そこで、本実施例のステム１では、図３に示したように、Ｎｉめっき膜７０にステム本体１０の表面を部分的に露出させる空隙７０ａを形成し、且つリード用貫通孔１０ｂにおいて固定部材４０の一部をＮｉめっき膜７０の空隙７０ａに格納させている。 Therefore, in the stem 1 of the present embodiment, as shown in FIG. 3, a gap 70a is formed in the Ni plating film 70 to partially expose the surface of the stem body 10, and the fixing member 40 is formed in the lead through hole 10b. Is partially stored in the void 70a of the Ni plating film 70.

Ｎｉめっき膜７０に空隙７０ａを形成し、且つリード用貫通孔１０ｂにおいて固定部材４０の一部をＮｉめっき膜７０の空隙７０ａに格納させることで、アンカー効果を発現し、固定部材４０とリード用貫通孔１０ｂとの密着性を高めることができる。このため、非円形状のリード用貫通孔１０ｂに嵌め込まれた固定部材４０に対してステム本体１０からの応力が均等に付与されない場合でも、リード用貫通孔１０ｂが固定部材４０により安定的に封止され、リード用貫通孔１０ｂでのリークを抑制することができる。 By forming a gap 70a in the Ni plating film 70 and storing a part of the fixing member 40 in the gap 70a of the Ni plating film 70 in the lead through hole 10b, an anchor effect is exhibited, and the fixing member 40 and the lead are used. Adhesion with the through hole 10b can be improved. Therefore, even if the stress from the stem body 10 is not evenly applied to the fixing member 40 fitted in the non-circular lead through hole 10b, the lead through hole 10b is stably sealed by the fixing member 40. It is stopped and leakage in the lead through hole 10b can be suppressed.

また、本実施例のステム１では、固定部材４０の一部をＮｉめっき膜７０の空隙７０ａに格納させるとともに、空隙７０ａから露出するステム本体１０の表面に接触させている。これにより、固定部材４０とリード用貫通孔１０ｂとの密着性をより高めることができ、リード用貫通孔１０ｂでのリークをより抑制することができる。 Further, in the stem 1 of the present embodiment, a part of the fixing member 40 is stored in the gap 70a of the Ni plating film 70 and is brought into contact with the surface of the stem body 10 exposed from the gap 70a. As a result, the adhesion between the fixing member 40 and the lead through hole 10b can be further improved, and leakage in the lead through hole 10b can be further suppressed.

また、本実施例のステム１では、Ｎｉめっき膜７０に凸部７０ｂを形成し、固定部材４０の外周面の、Ｎｉめっき膜７０の凸部７０ｂに対応する位置に該凸部７０ｂが格納される凹部を形成している。これにより、アンカー効果を発現し、固定部材４０とリード用貫通孔１０ｂとの密着性をより高めることができ、リード用貫通孔１０ｂでのリークをより抑制することができる。 Further, in the stem 1 of the present embodiment, the convex portion 70b is formed on the Ni plating film 70, and the convex portion 70b is stored at a position on the outer peripheral surface of the fixing member 40 corresponding to the convex portion 70b of the Ni plating film 70. A recess is formed. As a result, the anchor effect can be exhibited, the adhesion between the fixing member 40 and the lead through hole 10b can be further enhanced, and leakage in the lead through hole 10b can be further suppressed.

［ステムの製造方法］
図１に示したステム１は、例えば以下のような製造方法により製造することができる。まず、円形状のリード用貫通孔１０ａ及び長孔形状のリード用貫通孔１０ｂが形成されたステム本体１０が形成される。ステム本体１０は、鉄などの金属に例えば冷間鍛造プレス等のプレス加工が施されることにより、形成される。 [Stem manufacturing method]
The stem 1 shown in FIG. 1 can be manufactured by, for example, the following manufacturing method. First, the stem body 10 in which the circular lead through hole 10a and the elongated lead through hole 10b are formed is formed. The stem body 10 is formed by applying a press process such as a cold forging press to a metal such as iron.

続いて、ステム本体１０の表面にＮｉめっき膜７０が形成される。このとき、リード用貫通孔１０ａの内壁面及びリード用貫通孔１０ｂの内壁面を含む、ステム本体１０の表面全体にＮｉめっき膜７０が形成される。Ｎｉめっき膜７０は、例えばステム本体１０の表面に電解Ｎｉめっきが施されることにより、形成される。 Subsequently, a Ni plating film 70 is formed on the surface of the stem body 10. At this time, the Ni plating film 70 is formed on the entire surface of the stem body 10 including the inner wall surface of the lead through hole 10a and the inner wall surface of the lead through hole 10b. The Ni plating film 70 is formed, for example, by subjecting the surface of the stem body 10 to electrolytic Ni plating.

続いて、リード用貫通孔１０ａに固定部材２０が嵌め込まれ、リード用貫通孔１０ｂに固定部材４０が嵌め込まれる。 Subsequently, the fixing member 20 is fitted into the lead through hole 10a, and the fixing member 40 is fitted into the lead through hole 10b.

続いて、固定部材２０の孔に電気信号用リード３０が挿通され、固定部材４０の孔に給電用リード５０が挿通される。これにより、ステム本体１０、固定部材２０、電気信号用リード３０、固定部材４０及び給電用リード５０を有する中間構造体が形成される。 Subsequently, the electric signal lead 30 is inserted into the hole of the fixing member 20, and the power feeding lead 50 is inserted into the hole of the fixing member 40. As a result, an intermediate structure having a stem main body 10, a fixing member 20, an electric signal lead 30, a fixing member 40, and a feeding lead 50 is formed.

続いて、固定部材２０及び固定部材４０を溶融する温度（例えば、１０００℃）で中間構造体が加熱される。中間構造体が加熱されると、固定部材２０及び固定部材４０が溶融される。その後、中間構造体が冷却されて、固定部材２０及び固定部材４０が固化される。 Subsequently, the intermediate structure is heated at a temperature (for example, 1000 ° C.) at which the fixing member 20 and the fixing member 40 are melted. When the intermediate structure is heated, the fixing member 20 and the fixing member 40 are melted. After that, the intermediate structure is cooled to solidify the fixing member 20 and the fixing member 40.

固定部材２０及び固定部材４０が溶融された後に固化されることにより、電気信号用リード３０が固定部材２０を介してリード用貫通孔１０ａに固定され、給電用リード５０が固定部材４０を介してリード用貫通孔１０ｂに固定される。ここで、固定部材４０の溶融時に加えられる熱により、Ｎｉめっき膜７０が再結晶化され、再結晶化後のＮｉめっき膜７０における結晶粒界の位置に、ステム本体１０の表面を部分的に露出させる空隙７０ａが形成される。そして、リード用貫通孔１０ｂにおいて、固定部材４０の一部がＮｉめっき膜７０の空隙７０ａに格納される。また、固定部材４０の溶融時に加えられる熱により、ステム本体１０を形成する金属がＮｉめっき膜７０に対して拡散してＮｉめっき膜７０に凸部７０ｂが形成される。そして、リード用貫通孔１０ｂにおいて、固定部材４０の外周面の、Ｎｉめっき膜７０の凸部７０ｂに対応する位置に、該凸部７０ｂが格納される凹部が形成される。この結果、リード用貫通孔１０ｂにおいて、アンカー効果を発現させて、固定部材４０とリード用貫通孔１０ｂとの密着性を高めることができ、リード用貫通孔１０ｂでのリークを抑制することができる。 When the fixing member 20 and the fixing member 40 are melted and then solidified, the electric signal lead 30 is fixed to the lead through hole 10a via the fixing member 20, and the power feeding lead 50 is fixed via the fixing member 40. It is fixed to the lead through hole 10b. Here, the Ni plating film 70 is recrystallized by the heat applied when the fixing member 40 is melted, and the surface of the stem body 10 is partially placed at the position of the grain boundary in the Ni plating film 70 after recrystallization. A void 70a to be exposed is formed. Then, in the lead through hole 10b, a part of the fixing member 40 is stored in the gap 70a of the Ni plating film 70. Further, the metal forming the stem body 10 diffuses with respect to the Ni plating film 70 due to the heat applied when the fixing member 40 is melted, and a convex portion 70b is formed on the Ni plating film 70. Then, in the lead through hole 10b, a concave portion in which the convex portion 70b is stored is formed at a position corresponding to the convex portion 70b of the Ni plating film 70 on the outer peripheral surface of the fixing member 40. As a result, the anchor effect can be exhibited in the lead through hole 10b to improve the adhesion between the fixing member 40 and the lead through hole 10b, and leakage in the lead through hole 10b can be suppressed. ..

ここで、空隙７０ａ及び凸部７０ｂが形成されるためのＮｉめっき膜７０の厚さについて、図４を参照して説明する。図４は、Ｎｉめっき膜７０の厚さに対する、ステム本体１０の表面状態の一例を示す図である。図４には、Ｎｉめっき膜７０の厚さが４．５μｍである場合のステム本体１０の表面状態を示すトレース図１０１、１０２が示されている。また、図４には、Ｎｉめっき膜７０の厚さが５μｍである場合のステム本体１０の表面状態を示すトレース図１０３、１０４が示されている。トレース図１０１とトレース図１０３とは、ステム本体１０の表面に電解Ｎｉめっきが施された後のステム本体１０の表面状態を示している。トレース図１０２とトレース図１０４とは、固定部材４０が溶融及び固化された後のステム本体１０の表面状態を示している。各トレース図には、表面粗さが併せて示されている。 Here, the thickness of the Ni plating film 70 for forming the gap 70a and the convex portion 70b will be described with reference to FIG. FIG. 4 is a diagram showing an example of the surface state of the stem main body 10 with respect to the thickness of the Ni plating film 70. FIG. 4 shows traces 101 and 102 showing the surface state of the stem main body 10 when the thickness of the Ni plating film 70 is 4.5 μm. Further, FIG. 4 shows traces 103 and 104 showing the surface state of the stem main body 10 when the thickness of the Ni plating film 70 is 5 μm. Trace 101 and Trace 103 show the surface state of the stem body 10 after electrolytic Ni plating is applied to the surface of the stem body 10. Trace 102 and trace 104 show the surface state of the stem body 10 after the fixing member 40 has been melted and solidified. The surface roughness is also shown in each trace diagram.

図４から、Ｎｉめっき膜７０の厚さが４．５μｍである場合、Ｎｉめっき膜７０の厚さが５μｍである場合と比較して、固定部材４０が溶融及び固化された後のステム本体１０の表面が粗いことが確認される。すなわち、図４から、Ｎｉめっき膜７０の厚さが４．５μｍである場合、再結晶化後のＮｉめっき膜７０における結晶粒界の位置に空隙７０ａが形成されることが推測される。さらに、図４から、Ｎｉめっき膜７０の厚さが４．５μｍである場合、ステム本体１０を形成する金属がＮｉめっき膜７０に対して拡散してＮｉめっき膜７０に凸部７０ｂが形成されることが推測される。これらのことから、Ｎｉめっき膜７０の厚さは、５．０μｍよりも小さい範囲であることが好ましく、４．５μｍ以下の範囲であることがより好ましい。これにより、Ｎｉめっき膜７０に空隙７０ａ及び凸部７０ｂを安定的に形成することができる。 From FIG. 4, when the thickness of the Ni plating film 70 is 4.5 μm, the stem body 10 after the fixing member 40 is melted and solidified is compared with the case where the thickness of the Ni plating film 70 is 5 μm. It is confirmed that the surface of the surface is rough. That is, from FIG. 4, it is estimated that when the thickness of the Ni plating film 70 is 4.5 μm, voids 70a are formed at the positions of the crystal grain boundaries in the Ni plating film 70 after recrystallization. Further, from FIG. 4, when the thickness of the Ni plating film 70 is 4.5 μm, the metal forming the stem body 10 diffuses with respect to the Ni plating film 70 to form a convex portion 70b on the Ni plating film 70. It is presumed that From these facts, the thickness of the Ni plating film 70 is preferably in the range smaller than 5.0 μm, and more preferably in the range of 4.5 μm or less. As a result, the gap 70a and the convex portion 70b can be stably formed on the Ni plating film 70.

なお、Ｎｉめっき膜７０を形成する前か後に、Ｎｉめっき膜７０の表面を化学的に荒らして凹凸及び空隙を形成してもよい。 Before or after forming the Ni plating film 70, the surface of the Ni plating film 70 may be chemically roughened to form irregularities and voids.

中間構造体が冷却されて、固定部材２０及び固定部材４０が固化されると、中間構造体の表面全体にＮｉ／Ａｕめっき膜が形成される。Ｎｉ／Ａｕめっき膜は、例えば中間構造体の表面に電解Ｎｉめっきが施された後に電解Ａｕめっきが施されることにより、形成される。これにより、図１に示したステム１が完成する。 When the intermediate structure is cooled and the fixing member 20 and the fixing member 40 are solidified, a Ni / Au plating film is formed on the entire surface of the intermediate structure. The Ni / Au plating film is formed, for example, by subjecting the surface of the intermediate structure to electrolytic Ni plating and then electrolytic Au plating. As a result, the stem 1 shown in FIG. 1 is completed.

以上のように、実施例に係るステム１は、ステム本体１０と、Ｎｉめっき膜７０と、固定部材４０とを有する。ステム本体１０には、リード用貫通孔１０ｂが形成される。リード用貫通孔１０ｂは、例えば、非円形状である。Ｎｉめっき膜７０は、リード用貫通孔１０ｂの内壁面を含む、ステム本体１０の表面に形成され、空隙７０ａを有する。固定部材４０は、ステム本体１０のリード用貫通孔１０ｂに設けられて給電用リード５０を固定し、リード用貫通孔１０ｂにおいて一部がＮｉめっき膜７０の空隙７０ａに格納される。これにより、リード用貫通孔１０ｂでのリークの発生を抑制することができる。 As described above, the stem 1 according to the embodiment has a stem main body 10, a Ni plating film 70, and a fixing member 40. A lead through hole 10b is formed in the stem body 10. The lead through hole 10b has, for example, a non-circular shape. The Ni plating film 70 is formed on the surface of the stem body 10 including the inner wall surface of the lead through hole 10b, and has a gap 70a. The fixing member 40 is provided in the lead through hole 10b of the stem main body 10 to fix the power supply lead 50, and a part of the fixing member 40 is stored in the gap 70a of the Ni plating film 70 in the lead through hole 10b. As a result, it is possible to suppress the occurrence of a leak in the lead through hole 10b.

また、実施例に係るステム１において、固定部材４０は、リード用貫通孔１０ｂにおいて一部がＮｉめっき膜７０の空隙７０ａに格納されるとともに、空隙７０ａから露出するステム本体１０の表面に接触する。これにより、固定部材４０とリード用貫通孔１０ｂとの密着性をより高めることができ、リード用貫通孔１０ｂでのリークをより抑制することができる。 Further, in the stem 1 according to the embodiment, the fixing member 40 is partially stored in the gap 70a of the Ni plating film 70 in the lead through hole 10b and comes into contact with the surface of the stem body 10 exposed from the gap 70a. .. As a result, the adhesion between the fixing member 40 and the lead through hole 10b can be further improved, and leakage in the lead through hole 10b can be further suppressed.

また、実施例に係るステム１において、Ｎｉめっき膜７０は、ステム本体１０を形成する金属がＮｉめっき膜７０に対して拡散して形成された凸部７０ｂを有する。そして、固定部材４０は、外周面の、Ｎｉめっき膜７０の凸部７０ｂに対応する位置に、該凸部７０ｂが格納される凹部を有する。これにより、固定部材４０とリード用貫通孔１０ｂとの密着性をより高めることができ、リード用貫通孔１０ｂでのリークをより抑制することができる。 Further, in the stem 1 according to the embodiment, the Ni plating film 70 has a convex portion 70b formed by diffusing the metal forming the stem body 10 with respect to the Ni plating film 70. The fixing member 40 has a concave portion on the outer peripheral surface where the convex portion 70b is stored at a position corresponding to the convex portion 70b of the Ni plating film 70. As a result, the adhesion between the fixing member 40 and the lead through hole 10b can be further improved, and leakage in the lead through hole 10b can be further suppressed.

なお、円形状のリード用貫通孔１０ａにおいても本発明を適用することができる。すなわち、Ｎｉめっき膜７０に空隙７０ａを形成し、且つリード用貫通孔１０ａにおいて固定部材２０の一部をＮｉめっき膜７０の空隙７０ａに格納させることで、アンカー効果を発現し、固定部材２０とリード用貫通孔１０ａとの密着性を高めることができる。これにより、リード用貫通孔１０ａでのリークの発生を抑制することができる。 The present invention can also be applied to the circular lead through hole 10a. That is, by forming a gap 70a in the Ni plating film 70 and storing a part of the fixing member 20 in the gap 70a of the Ni plating film 70 in the lead through hole 10a, the anchor effect is exhibited and the fixing member 20 and the fixing member 20 Adhesion with the lead through hole 10a can be improved. As a result, it is possible to suppress the occurrence of a leak in the lead through hole 10a.

また、上述の説明では、Ｎｉめっき膜７０に空隙７０ａを形成し、且つリード用貫通孔１０ｂにおいて固定部材４０の一部をＮｉめっき膜７０の空隙７０ａに格納させる例を説明したが、開示技術はこれに限定されない。例えば、Ｎｉめっき膜７０に凹凸を形成し、且つリード用貫通孔１０ｂにおいて固定部材４０の一部をＮｉめっき膜７０の凹凸に格納させてもよい。 Further, in the above description, an example in which a gap 70a is formed in the Ni plating film 70 and a part of the fixing member 40 is stored in the gap 70a of the Ni plating film 70 in the lead through hole 10b has been described. Is not limited to this. For example, the Ni plating film 70 may have irregularities, and a part of the fixing member 40 may be stored in the irregularities of the Ni plating film 70 in the lead through hole 10b.

１ ステム
１０ ステム本体
１０ａ、１０ｂ リード用貫通孔
２０、４０ 固定部材
３０ 電気信号用リード
５０ 給電用リード
７０ Ｎｉめっき膜
７０ａ 空隙
７０ｂ 凸部
Ｒ 素子搭載領域 1 Stem 10 Stem body 10a, 10b Lead through holes 20, 40 Fixing member 30 Electric signal lead 50 Power supply lead 70 Ni plating film 70a Void 70b Convex R element mounting area

Claims (7)

貫通孔が形成されたステム本体と、
前記貫通孔の内壁面を含む、前記ステム本体の表面に形成され、凹凸又は空隙を有するニッケルめっき膜と、
前記ステム本体の貫通孔に設けられてリードを固定し、前記貫通孔において一部が前記ニッケルめっき膜の凹凸又は空隙に格納される固定部材と、
を有することを特徴とするステム。 Stem body with through holes and
A nickel-plated film formed on the surface of the stem body, including the inner wall surface of the through hole, and having irregularities or voids.
A fixing member provided in the through hole of the stem body to fix the reed, and a part of the lead is stored in the unevenness or void of the nickel plating film in the through hole.
A stem characterized by having. 前記貫通孔は、非円形状であることを特徴とする請求項１に記載のステム。 The stem according to claim 1, wherein the through hole has a non-circular shape. 前記貫通孔に複数の前記リードが固定されていることを特徴とする請求項１又は２に記載のステム。 The stem according to claim 1 or 2, wherein a plurality of the leads are fixed to the through holes. 前記固定部材は、
前記貫通孔において一部が前記ニッケルめっき膜の空隙に格納されるとともに、前記空隙から露出する前記ステム本体の表面に接触することを特徴とする請求項１に記載のステム。 The fixing member is
The stem according to claim 1, wherein a part of the through hole is stored in the voids of the nickel plating film and comes into contact with the surface of the stem body exposed from the voids. 前記ステム本体は、金属により形成され、
前記固定部材は、前記ステム本体を形成する金属よりも熱膨張係数が小さい絶縁性材料により形成されることを特徴とする請求項１に記載のステム。 The stem body is made of metal
The stem according to claim 1, wherein the fixing member is made of an insulating material having a coefficient of thermal expansion smaller than that of the metal forming the stem body. 前記金属は、鉄であり、
前記絶縁性材料は、ガラスであることを特徴とする請求項５に記載のステム。 The metal is iron
The stem according to claim 5, wherein the insulating material is glass. 前記ニッケルめっき膜は、
前記ステム本体を形成する金属が前記ニッケルめっき膜に対して拡散して形成された凸部を有し、
前記固定部材は、
外周面の、前記ニッケルめっき膜の凸部に対応する位置に、該凸部が格納される凹部を有することを特徴とする請求項５又は６に記載のステム。 The nickel plating film is
The metal forming the stem body has a convex portion formed by diffusing with respect to the nickel plating film.
The fixing member is
The stem according to claim 5 or 6, wherein the outer peripheral surface has a concave portion in which the convex portion is stored at a position corresponding to the convex portion of the nickel plating film.
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JP2006073776A (en) * 2004-09-02 2006-03-16 Shinko Electric Ind Co Ltd Cap for semiconductor device
JP2011059571A (en) * 2009-09-14 2011-03-24 Sumitomo Electric Ind Ltd Optical sub-assembly
JP2014146756A (en) * 2013-01-30 2014-08-14 Kyocera Corp Electronic component mounting package and electronic device using the same
JP2017179597A (en) * 2016-03-28 2017-10-05 東洋製罐グループホールディングス株式会社 Base material for substrate for flexible device, and production method thereof

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JPS637652A (en) * 1986-06-27 1988-01-13 Sumitomo Electric Ind Ltd Metal package for airtight sealing of semiconductor
JP2006073776A (en) * 2004-09-02 2006-03-16 Shinko Electric Ind Co Ltd Cap for semiconductor device
JP2011059571A (en) * 2009-09-14 2011-03-24 Sumitomo Electric Ind Ltd Optical sub-assembly
JP2014146756A (en) * 2013-01-30 2014-08-14 Kyocera Corp Electronic component mounting package and electronic device using the same
JP2017179597A (en) * 2016-03-28 2017-10-05 東洋製罐グループホールディングス株式会社 Base material for substrate for flexible device, and production method thereof

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