JP2021016923A - Sensor - Google Patents

Abstract

To provide a sensor capable of performing a stable operation.SOLUTION: A sensor 110 includes a first structure part 50, a substrate part 20, a first connection member 41, and a MEMS element 10. The first structure part includes: a first structure body 58 including first and second part areas 51, 52; and a first structure electrode 58E provided in a second partial area. The substrate part includes a first substrate 28 and a first substrate electrode 28E. The first substrate electrode is located between the first structure part and the first substrate. The first substrate includes first and second parts 21, 22. The first substrate electrode includes a first electrode part 28Ea and a second electrode part 28Eb. The second electrode part is provided between the first structure electrode and the second part. The first connection member is provided between the first structure electrode and the second electrode part. The MEMS element is provided between the first part area and the first part, and a direction to the second part area from an element substrate including an electrode substrate 18 and a first element electrode 18E intersects a direction where the substrate part is apart from the first part area.SELECTED DRAWING: Figure 1

Description

Embodiments of the present invention relate to sensors.

There are sensors such as gyro sensors. Stable operation is desired in the sensor.

Japanese Patent No. 3503133

An embodiment of the present invention provides a sensor capable of stable operation.

According to an embodiment of the present invention, the sensor includes a first structure part, a substrate part, a first connecting member and a MEMS element. The first structure portion includes a first structure including a first partial region and a second partial region, and a first structure electrode provided in the second partial region. The substrate portion is separated from the first partial region in the first direction. The substrate portion includes a first substrate and a first substrate electrode. The first substrate electrode is located between the first structure portion and the first substrate. The first substrate includes a first portion and a second portion. The direction from the first portion to the second portion intersects the first direction. The first substrate electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion. The second electrode portion is provided between the first structure electrode and the second portion. The first connecting member is provided between the first structure electrode and the second electrode portion, and electrically connects the first structure electrode to the second electrode portion. The MEMS element is provided between the first partial region and the first portion. The MEMS element includes an element substrate and a first element electrode. The second direction from the element substrate to at least a part of the second partial region intersects the first direction. The first element electrode is located between the element substrate and the first electrode portion, and is electrically connected to the first electrode portion.

1 (a) and 1 (b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 2 (a) and 2 (b) are schematic cross-sectional views illustrating the sensor according to the first embodiment. FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. 4 (a) to 4 (c) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 5 (a) to 5 (c) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 6 (a) and 6 (b) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 7 (a) to 7 (c) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment. 9 (a) and 9 (b) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the second embodiment. FIG. 10 is a schematic cross-sectional view illustrating a part of the sensor according to the embodiment. FIG. 11 is a schematic plan view illustrating a part of the sensor according to the embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

(First Embodiment)
1 (a), 1 (b), 2 (a) and 2 (b) are schematic cross-sectional views illustrating the sensor according to the first embodiment.
As shown in FIG. 1A, the sensor 110 according to the embodiment includes a first structure portion 50, a substrate portion 20, a MEMS element 10, and a first connecting member 41.

The first structure portion 50 includes a first structure 58 and a first structure electrode 58E. The first structure 58 includes a first partial region 51 and a second partial region 52. In this example, the first structure 58 further includes third to fifth subregions 53 to 55 and the like. The boundaries of the first to fifth subregions 51 to 55 may be unclear. Examples of the third to fifth subregions 53 to 55 will be described later. The first structure electrode 58E is provided in the second partial region 52. For example, the first structure electrode 58E may be connected to the conductive portion 58C. The conductive portion 58C passes through the first structure 58 and is exposed to the outside of the first structure 58. The first structure 58 is, for example, insulating.

For example, the second partial region 52 includes a first surface 52f provided with a first structure electrode 58E. The first partial region 51 recedes with respect to the first surface 52f. For example, the first partial region 51 is a recess of the first structure 58. The second partial region 52 corresponds to the convex portion when the first partial region 51 is used as a reference. The portion having the first surface 52f provided with the first structure electrode 58E corresponds to the second partial region 52.

The substrate portion 20 and the MEMS element 10 are included in the element portion 10U. FIG. 1B illustrates the element unit 10U. FIG. 2A illustrates the MEMS element 10. FIG. 2B illustrates the substrate portion 20.

As shown in FIG. 1A, the substrate portion 20 is separated from the first partial region 51 in the first direction.

The first direction is the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

The direction from the first partial region 51 to at least a part of the second partial region 52 intersects the first direction (Z-axis direction).

As shown in FIG. 1A, the substrate portion 20 includes a first substrate 28 and a first substrate electrode 28E. The first substrate electrode 28E is located between the first structure portion 50 and the first substrate 28. The first substrate 28 is, for example, insulating.

As shown in FIGS. 1B and 2B, the first substrate 28 includes a first portion 21 and a second portion 22. The direction from the first portion 21 to the second portion 22 intersects the first direction (Z-axis direction). The direction from the first portion 21 to the second portion 22 is, for example, the X-axis direction.

As shown in FIGS. 1A and 2B, the first substrate electrode 28E includes a first electrode portion 28Ea and a second electrode portion 28Eb. The second electrode portion 28Eb is electrically connected to the first electrode portion 28Ea. For example, the second electrode portion 28Eb is continuous with the first electrode portion 28Ea. As shown in FIG. 1A, the second electrode portion 28Eb is provided between the first structure electrode 58E and the second portion 22.

As shown in FIG. 2B, a conductive film 28M may be provided between the first substrate electrode 28E and the first substrate 28. The conductive film 28M may be selectively provided in the connection region, for example. The thickness of the conductive film 28M is relatively thick. For example, the thickness of the conductive film 28M may be thicker than the thickness of the first substrate electrode 28E. By providing the conductive film 28M, the distance between the element substrate 18 and the first portion 21 in the first direction (Z-axis direction) can be stably set to an appropriate value.

As shown in FIG. 1A, the first connecting member 41 is provided between the first structure electrode 58E and the second electrode portion 28Eb. The first connecting member 41 electrically connects the first structure electrode 58E to the second electrode portion 28Eb. The first connecting member 41 includes, for example, a conductive paste or the like.

As shown in FIG. 1A, the MEMS element 10 is provided between the first portion region 51 and the first portion 21. For example, a first gap g1 is provided between the first partial region 51 and the MEMS element 10. For example, a second gap g2 is provided between the MEMS element 10 and the first portion 21.

As shown in FIGS. 1A and 2A, the MEMS element 10 includes an element substrate 18 and a first element electrode 18E. As shown in FIG. 1A, the first element electrode 18E is located between the element substrate 18 and the first electrode portion 28Ea. The first element electrode 18E is electrically connected to the first electrode portion 28Ea. The second direction from the element substrate 18 to at least a part of the second partial region 52 intersects the first direction (Z-axis direction). For example, the second direction is perpendicular to the first direction. The second direction is, for example, the X-axis direction.

In the embodiment, the first substrate electrode 28E is electrically connected to the first structure electrode 58E by the first connecting member 41. For example, a first reference example in which the first substrate electrode 28E is connected to the first structure electrode 58E by a wire or the like can be considered. In the first reference example, the size of the sensor becomes large. In the embodiment, by using the first connecting member 41, a stable connection can be obtained with a small size.

As shown in FIG. 1A, in the embodiment, at least a part of the MEMS element 10 is located in the concave portion of the first structure 58. For example, the direction from the element substrate 18 to at least a part of the second partial region 52 intersects the first direction (Z-axis direction). Further, a first gap g1 is provided between the first partial region 51 and the MEMS element 10. The MEMS element 10 is suspended from, for example, the substrate portion 20, and the substrate portion 20 is supported by the second partial region 52 of the first structure 58 via the first connecting member 41. When various stresses are applied to the element portion 10U including the MEMS element 10, the MEMS element 10 can move in the recess of the first structure 58. For example, the MEMS element 10 can move even when the connecting portion is deformed due to stress caused by a change in temperature or the like. As a result, for example, the connection of the first connecting member 41 is stable.

For example, the MEMS element 10 and the substrate portion 20 are firmly bonded by the first electrode portion 28Ea and the first element electrode 18E. On the other hand, the first connecting member 41 is more easily deformed than the joint portion of the first electrode portion 28Ea and the first element electrode 18E. For example, even when various stresses are generated, the deformation of the first connecting member 41 suppresses the instability of the connection between the first electrode portion 28Ea and the first element electrode 18E.

By providing the first gap g1 between the first partial region 51 and the MEMS element 10, the MEMS element 10 can be displaced even when the first connecting member 41 is deformed. As a result, the adverse effect on the characteristics of the MEMS element 10 can be suppressed. Deformation of the first connecting member 41 can be made difficult to be restricted.

According to the embodiment, the connection between the first electrode portion 28Ea and the first element electrode 18E is stable even when heat or mechanical force is applied. The adverse effect on the characteristics of the MEMS element 10 can be suppressed. The first connecting member 41 also stabilizes the electrical and mechanical connections. According to the embodiment, it is possible to provide a sensor capable of stable operation. According to the embodiment, it is easy to reduce the size. It is easy to reduce the cost.

As shown in FIG. 1A, for example, the length 41t (thickness) of the first connecting member 41 in the first direction (Z-axis direction) is the direction in which the first connecting member 41 intersects the first direction. It is shorter than the length 41w (width) (for example, in the X-axis direction). The length of the first connecting member 41 in the cross-sectional direction is longer than the length in the direction of the electric current passing through the first connecting member 41. This makes it easier to obtain low resistance. For example, the connection area can be increased by using the first connecting member 41 without using a wire.

In the embodiment, for example, the first element electrode 18E is in contact with the first electrode portion 28Ea. The first element electrode 18E and the first electrode portion 28Ea are joined to each other, for example. The first element electrode 18E and the first electrode portion 28Ea are connected by, for example, joining two metals. This enables a more stable connection. It can be connected with low resistance.

For example, the difference between the coefficient of linear expansion of the first substrate 28 and the coefficient of linear expansion of the element substrate 18 is small. For example, the absolute value of the difference between the linear expansion coefficient of the first substrate 28 and the linear expansion coefficient of the element substrate 18 is the linear expansion coefficient of the first substrate 28 and the linear expansion coefficient of the first structure 58. Less than the absolute value of the difference. Since the difference between the coefficient of linear expansion of the first substrate 28 and the coefficient of linear expansion of the element substrate 18 is small, the first electrode portion 28Ea and the first element electrode 18E are stably connected to each other.

Even when the difference between the linear expansion coefficient of the first substrate 28 and the linear expansion coefficient of the first structure 58 is large, the first connecting member 41 is easily deformed, which adversely affects the difference in the linear expansion coefficients. Is unlikely to occur.

For example, the element substrate 18 contains silicon. The first substrate 28 contains, for example, a material having a linear expansion coefficient close to that of silicon linear expansion formation. The first substrate 28 may include, for example, glass.

The first structure 58 contains, for example, at least one selected from the group consisting of aluminum oxide and magnesium oxide. The first structure 58 may include an organic binder or the like. With these materials, high insulation and high reliability can be easily obtained. The first structure portion 50 may include a metal for electrodes.

As shown in FIGS. 1A and 2A, the element substrate 18 includes the element substrate side surface 18s. The element substrate side surface 18s intersects the second direction (for example, the X-axis direction). As shown in FIG. 1A, the element substrate side surface 18s is separated from at least a part of the second partial region 52 in the second direction. When the side surface 18s of the element substrate is separated from the second partial region 52, the margin of movement of the MEMS element 10 is increased.

As shown in FIGS. 1 (b) and 2 (a), the MEMS element 10 includes a movable portion 16 and a support portion 18S. As shown in FIG. 1B, the movable portion 16 and the support portion 18S are located between the element substrate 18 and the first portion 21. The support portion 18S is fixed to the element substrate 18. In this example, the insulating portion 18I is provided between the element substrate 18 and the supporting portion 18S. The support portion 18S is fixed to the element substrate 18 via the insulating portion 18I. The movable portion 16 is supported by the support portion 18S. For example, as will be described later, the movable portion 16 is supported by the support portion 18S via the spring portion.

As shown in FIGS. 1 (b) and 2 (a), there is a third gap g3 between the element substrate 18 and the movable portion 16. The movable portion 16 can move by providing the third gap g3 between the element substrate 18 and the movable portion 16. As will be described later, the capacitance is formed by at least a part of the movable portion 16. The displacement of the movable portion 16 changes the capacitance. For example, the movable portion 16 is displaced due to acceleration or the like. A value corresponding to the capacitance based on this displacement can be detected. Acceleration and the like can be detected by detecting the value corresponding to the capacitance. The MEMS element 10 is, for example, a gyro sensor.

For example, the distance dz in the first direction (Z-axis direction) between the movable portion 16 and the first portion 21 (see FIG. 1B) is, for example, 1 μm or more. When the distance dz is 1 μm or more, it is possible to suppress the restriction of the movement of the movable portion 16.

As shown in FIG. 1A, for example, the distance between the element substrate 18 and the first portion 21 in the first direction (Z-axis direction) is defined as the first distance d1. The distance in the first direction (Z-axis direction) between the second portion region 52 and the second portion 22 is defined as the second distance d2. The first distance d1 is shorter than the second distance d2. When the second distance d2 is long, for example, the margin of the shape of the first connecting member 41 is increased. More stable and good operation can be obtained.

As shown in FIG. 1A, the first structure 58 may further include a third partial region 53 in addition to the first partial region 51 and the second partial region 52. The positions of at least a part of the second partial region 52 in the first direction (Z-axis direction) are the position of at least a part of the first partial region 51 in the first direction and the position of at least a part of the third partial region 53. It is between the position in one direction. The positions of at least a part of the second partial region 52 in the second direction (for example, the X-axis direction) are the position of at least a part of the first partial region 51 in the second direction and at least a part of the third partial region 53. It is between the position in the second direction. As described above, the first partial region 51 is retracted with reference to the first surface 52f of the second partial region 52. The third partial region 53 projects, for example, with reference to the first surface 52f. By providing the third partial region 53, for example, the substrate portion 20 is protected.

As shown in FIG. 1A, the direction from the element substrate 18 to at least a part of the second partial region 52 is along the second direction (for example, the X-axis direction). For example, the direction from the first substrate 28 to at least a part of the third partial region 53 is along the second direction (for example, the X-axis direction).

As shown in FIG. 1A, the sensor 110 may further include a second connecting member 42. The first structure 58 further includes a fourth subregion 54. The position of the first partial region 51 in the second direction (for example, the X-axis direction) is between the position of the fourth partial region 54 in the second direction and the position of the second partial region 52 in the second direction. .. The first structure portion 50 further includes a second structure electrode 58F. The second structure electrode 58F is provided in the fourth partial region 54.

As shown in FIGS. 1 (a), 1 (b) and 2 (b), the first substrate 28 further includes a third portion 23. For example, in the second direction (eg, the X-axis direction), the first portion 21 is between the third portion 23 and the second portion 22. The boundaries of these parts may be unclear.

As shown in FIGS. 1 (a), 1 (b) and 2 (b), the substrate portion 20 further includes a second substrate electrode 28F. As shown in FIG. 1A, the second substrate electrode 28F is located between the first structure portion 50 and the first substrate 28. As shown in FIGS. 1A and 2B, the second substrate electrode 28F includes a third electrode portion 28Fc and a fourth electrode portion 28Fd. The fourth electrode portion 28Fd is electrically connected to the third electrode portion 28Fc. For example, the fourth electrode portion 28Fd is continuous with the third electrode portion 28Fc.

As shown in FIG. 1A, the fourth electrode portion 28Fd is provided between the second structure electrode 58F and the third portion 23. The second connecting member 42 is provided between the second structure electrode 58F and the fourth electrode portion 28Fd. The second connecting member 42 electrically connects the second structure electrode 58F to the fourth electrode portion 28Fd. The second connecting member 42 contains, for example, the same material as the first connecting member 41. The second connecting member 42 contains, for example, a conductive paste.

As shown in FIG. 1 (b), the MEMS element 10 includes a second element electrode 18F. As shown in FIG. 1A, the second element electrode 18F is located between the element substrate 18 and the third electrode portion 28Fc. The second element electrode 18F is electrically connected to the third electrode portion 28Fc. For example, the second element electrode 18F is in contact with the third electrode portion 28Fc. The second element electrode 18F and the third electrode portion 28Fc are joined to each other, for example. The second element electrode 18F and the third electrode portion 28Fc are connected by, for example, joining two metals. This enables a more stable connection. It can be connected with low resistance.

For example, the plurality of electrodes of the MEMS element 10 are connected to the plurality of electrodes of the substrate portion 20, respectively. The plurality of electrodes of the substrate portion 20 are connected to the plurality of electrodes of the first structure portion 50, respectively. A plurality of portions of the MEMS element 10 are held by the substrate portion 20. A plurality of portions of the substrate portion 20 are held by the first structure portion 50. More stable retention can be obtained.

As shown in FIG. 2A, the MEMS device 10 may further include another electrode 18G. In this example, the electrode 18G is provided on the support portion 18S. For example, the capacitance between the electrode 18G and the first element electrode 18E may be detected. For example, the capacitance between the electrode 18G and the second element electrode 18F may be detected.

As shown in FIG. 1A, the first structure 58 may further include a fifth partial region 55. The positions of at least a part of the fourth partial region 54 in the first direction (Z-axis direction) are the position of at least a part of the fifth partial region 55 in the first direction and the position of at least a part of the first partial region 51. It is between the position in one direction. The positions of at least a part of the fourth partial region 54 in the second direction (for example, the X-axis direction) are the position of at least a part of the fifth partial region 55 in the second direction and at least a part of the first partial region 51. It is between the position in the second direction. As shown in FIG. 1A, the direction from at least a part of the fourth partial region 54 toward the element substrate 18 is along the second direction (for example, the X-axis direction). For example, the direction from at least a part of the fifth partial region 55 to the first substrate 28 is along the second direction (for example, the X-axis direction).

For example, the fifth partial region 55 may be continuous with the third partial region 53. The fifth partial region 55 may be discontinuous with the third partial region 53. For example, the fourth partial region 54 may be continuous with the second partial region 52. The fourth partial region 54 may be discontinuous with the second partial region 52.

FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment.
FIG. 3 is a plan view seen from the arrow AR of FIG. 1 (a). FIG. 1A is a cross-sectional view corresponding to line A1-A2 of FIG.

As shown in FIG. 3, the fourth partial region 54 may be continuous with the second partial region 52. In this case, the fourth partial region 54 may be regarded as a part of the annular second partial region 52. For example, the second partial region 52 is provided around the element substrate 18 in a plane (for example, an XY plane) that intersects the first direction (X-axis direction). The second partial region 52 surrounds the element substrate 18 in the XY plane.

As shown in FIG. 3, the fifth partial region 55 may be continuous with the third partial region 53. In this case, the fifth partial region 55 may be regarded as a part of the annular third partial region 53. For example, the third partial region 53 is provided around the first substrate 28 in a plane (for example, an XY plane) that intersects the first direction (X-axis direction). The third partial region 53 surrounds the first substrate 28 in the XY plane.

For example, a plurality of first structure electrodes 58E may be provided. A plurality of second electrode portions 28Eb may be provided. For example, a plurality of first connecting members 41 may be provided. One of the plurality of first connecting members 41 is provided between one of the plurality of first structure electrodes 58E and one of the plurality of second electrode portions 28Eb. One of the plurality of first connecting members 41 electrically connects one of the plurality of first structure electrodes 58E to one of the plurality of second electrode portions 28Eb.

For example, a plurality of first element electrodes 18E are provided. A plurality of first electrode portions 28Ea are provided. One of the plurality of first element electrodes 18E is electrically connected to one of the plurality of first electrode portions 28Ea.

Hereinafter, an example of a method for manufacturing the sensor 110 will be described.
4 (a) to 4 (c), 5 (a) to 5 (c), 6 (a), 6 (b), and 7 (a) to 7 (c) are shown. , Is a schematic cross-sectional view illustrating the method of manufacturing the sensor according to the first embodiment.

As shown in FIG. 4A, the element substrate 18 is prepared. An insulating portion 18I is provided on the element substrate 18. A conductive layer 16F is provided on the insulating portion 18I. The conductive layer 16F includes a semiconductor such as silicon. The conductive layer 16F is, for example, SOI (Silicon on Insulator). The material of the element substrate 18 is arbitrary.

As shown in FIG. 4B, by processing the conductive film after forming the conductive film, electrodes (for example, first element electrode 18E, second element electrode 18F and electrode 18G) can be obtained. Electrodes) include, for example, Au.

As shown in FIG. 4C, the conductive layer 16F is processed. As a result, the movable portion 16 is obtained.

As shown in FIG. 5A, the first substrate 28 is prepared. The first substrate 28 includes, for example, glass. For example, the first substrate 28 may have transparency to visible light. This facilitates the alignment step described later.

As shown in FIG. 5B, the conductive film 28M is formed. The conductive film 28M is selectively provided in, for example, a connection region (for example, a pad portion). The thickness of the conductive film 28M is, for example, about 1 μm.

As shown in FIG. 5C, a substrate electrode (for example, a first substrate electrode 28E and a second substrate electrode 28F) is formed. The substrate electrode includes, for example, Au. The substrate electrodes are formed, for example, by thin film deposition.

As shown in FIG. 6A, the first substrate electrode 28E is opposed to the first element electrode 18E. The second substrate electrode 28F is opposed to the second element electrode 18F. For example, metals (eg Au) are joined together.

As shown in FIG. 6B, a part of the element substrate 18 is removed. For example, dicing is performed. For example, element separation is performed. For example, the pad portion (for example, a part of the first substrate electrode 28E and a part of the second substrate electrode 28F) is exposed. As a result, the element unit 10U can be obtained.

As shown in FIG. 7A, the first structure portion 50 is prepared.

As shown in FIG. 7B, the conductive paste 41A is applied onto the first structure electrode 58E and the second structure electrode 58F. The coating is performed by, for example, a dispenser 45 or the like.

As shown in FIG. 7C, the element portion 10U is mounted on the first structure portion 50. At this time, if the first substrate 28 has transparency to visible light, alignment becomes easy. By performing the heat treatment, the first connecting member 41 and the second connecting member 42 are formed from the conductive paste 41A, and the connection is performed. As a result, the sensor 110 is obtained.

(Second Embodiment)
FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment.
As shown in FIG. 8, the sensor 120 according to the embodiment further includes a second structure portion 60 in addition to the first structure portion 50, the substrate portion 20, the MEMS element 10, and the first connecting member 41. The configuration of the first structure portion 50, the substrate portion 20, the MEMS element 10 and the first connecting member 41 in the sensor 120 is the first structure portion 50, the substrate portion 20, the MEMS element 10 and the first connection in the sensor 110. The configuration of the member 41 may be the same. Hereinafter, an example of the second structure portion 60 will be described.

The MEMS element 10 and the substrate portion 20 are located between the first structure portion 50 and the second structure portion 60. The second structure portion 60 is connected to the third partial region 53. For example, the first structure portion 50 and the second structure portion 60 maintain the space 50SP surrounded by the first structure portion 50 and the second structure portion 60 at less than 1 atm. The MEMS element 10 and the substrate portion 20 are in the space 50SP. The first structure portion 50 and the second structure portion 60 airtightly seal the space 50SP. For example, a fourth gap g4 is provided between the substrate portion 20 (first substrate 28) and the second structure portion 60.

By reducing the pressure in the space 50SP, the movable portion 16 can be easily moved. For example, high sensitivity can be obtained. For example, the air pressure in the first gap g1 is substantially the same as the air pressure in the second gap g2.

The second structure portion 60 includes, for example, at least one selected from the group consisting of metal, ceramic and glass. Metals include, for example, iron, nickel and cobalt. Ceramics include, for example, aluminum oxide.

9 (a) and 9 (b) are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the second embodiment.
As shown in FIG. 9B, the sensor 110 is subjected to heat treatment, degassing, and the like. After that, as shown in FIG. 9B, for example, the second structure portion 60 is joined to the first structure portion 50 in a reduced pressure environment. As a result, the sensor 120 is obtained.

FIG. 10 is a schematic cross-sectional view illustrating a part of the sensor according to the embodiment.
FIG. 10 illustrates the element unit 10U. As shown in FIG. 10, in the sensor 110a according to the embodiment, the element unit 10U also includes the substrate unit 20 and the MEMS element 10. In the sensor 110a, the conductive film 28L is provided on the surface of the first substrate 28. The conductive film 28L is, for example, wiring. A conductive film 28M is provided between the conductive film 28L and the first substrate electrode 28E. Another conductive film 28M is provided between the conductive film 28L and the second substrate electrode 28F. The first substrate electrode 28E and the second substrate electrode 28F are, for example, metal films for bonding. The element unit 10U having such a configuration may be applied to the embodiment.

FIG. 11 is a schematic plan view illustrating a part of the sensor according to the embodiment.
FIG. 11 illustrates the MEMS element 10. As shown in FIG. 11, the movable portion 16 is supported by the spring portion 19 connected to the support portion 18S.

The embodiment may include the following configurations (eg, technical proposals).
(Structure 1)
A first structure portion including a first structure including a first partial region and a second partial region, and a first structure electrode provided in the second partial region.
A substrate portion separated from the first partial region in the first direction, the substrate portion includes a first substrate and a first substrate electrode, and the first substrate electrode includes the first structure portion and the first structure portion. Between the 1st substrate and the 1st substrate, the 1st substrate includes a 1st portion and a 2nd portion, and the direction from the 1st portion to the 2nd portion intersects the 1st direction, and the 1st substrate The electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion, and the second electrode portion includes the first structure electrode and the second portion. With the substrate portion provided between
A first connecting member provided between the first structure electrode and the second electrode portion and electrically connecting the first structure electrode to the second electrode portion.
A MEMS element provided between the first partial region and the first portion, wherein a first gap is provided between the first partial region and the MEMS element, and the MEMS element and the first portion are provided. A second gap is provided between the portion and the MEMS element, the element substrate and the first element electrode are provided, and the second direction from the element substrate to at least a part of the second partial region is the first. With the MEMS element, which intersects the direction and is located between the element substrate and the first electrode portion and is electrically connected to the first electrode portion.
Sensor with.

(Structure 2)
The sensor according to configuration 1, wherein the first element electrode is in contact with the first electrode portion.

(Structure 3)
The absolute value of the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the element substrate is the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the first structure. The sensor according to configuration 1 or 2, which is less than the absolute value of.

(Structure 4)
The element substrate includes a side surface of the element substrate that intersects the second direction.
The sensor according to any one of configurations 1 to 3, wherein the side surface of the element substrate is separated from the second partial region.

(Structure 5)
The MEMS element includes a movable part and a support part, and includes a movable part and a support part.
The movable portion and the support portion are located between the element substrate and the first portion.
The support portion is fixed to the element substrate and
The movable portion is supported by the support portion and is supported by the support portion.
The sensor according to any one of configurations 1 to 4, wherein there is a third gap between the element substrate and the movable portion.

(Structure 6)
The sensor according to any one of configurations 1 to 5, wherein the distance between the movable portion and the first portion in the first direction is 1 μm or more.

(Structure 7)
The sensor according to any one of configurations 1 to 6, wherein the length of the first connecting member in the first direction is shorter than the length of the first connecting member in a direction intersecting with the first direction.

(Structure 8)
The first distance in the first direction between the element substrate and the first portion is shorter than the second distance in the first direction between the second portion region and the second portion. The sensor according to any one of 7 to 7.

(Structure 9)
The second partial region includes a first surface provided with the first structure electrode.
The sensor according to any one of configurations 1 to 8, wherein the first partial region is retracted with reference to the first surface.

(Structure 10)
The sensor according to any one of configurations 1 to 9, wherein the second partial region is provided around the element substrate in a plane intersecting the first direction.

(Structure 11)
A plurality of the first structure electrodes are provided.
A plurality of the second electrode portions are provided.
A plurality of the first connecting members are provided.
One of the plurality of first connecting members is provided between one of the plurality of first structure electrodes and one of the plurality of second electrode portions, and is provided between the plurality of first structure electrodes. The one is electrically connected to the one of the plurality of second electrode portions,
A plurality of the first element electrodes are provided.
A plurality of the first electrode portions are provided.
The sensor according to any one of configurations 1 to 10, wherein one of the plurality of first element electrodes is electrically connected to one of the plurality of first electrode portions.

(Structure 12)
The first structure further includes a third partial region.
The positions of at least a part of the second partial region in the first direction are the position of at least a part of the first partial region in the first direction and the position of at least a part of the third partial region in the first direction. Between and the position in
The positions of at least a part of the second partial region in the second direction are the position of at least a part of the first partial region in the second direction and the position of at least a part of the third partial region in the second direction. The sensor according to any one of configurations 1 to 11, located between and between the positions in.

(Structure 13)
The sensor according to the configuration 12, wherein the direction from the first substrate to at least a part of the third partial region is along the second direction.

(Structure 14)
The sensor according to configuration 12 or 13, wherein the third partial region is provided around the first substrate in a plane intersecting the first direction.

(Structure 15)
Further equipped with a second structure part,
The sensor according to any one of configurations 12 to 14, wherein the MEMS element and the substrate portion are located between the first structure portion and the second structure portion.

(Structure 16)
The second structure portion is connected to the third partial region and is connected to the third structural portion.
The first structure portion and the second structure portion maintain the space surrounded by the first structure portion and the second structure portion at less than 1 atm.
The sensor according to configuration 15, wherein the MEMS element and the substrate portion are in the space.

(Structure 17)
The sensor according to any one of configurations 1 to 16, wherein the first connecting member includes a conductive paste.

(Structure 18)
With a second connecting member
The first structure further includes a fourth partial region, and the positions of the first partial region in the second direction are the position of the fourth partial region in the second direction and the second in the second direction. Between the position in the subregion and
The first structure portion further includes a second structure electrode.
The second structure electrode is provided in the fourth partial region.
The first substrate further comprises a third portion, and in the second direction, the first portion is between the third portion and the second portion.
The substrate portion further includes a second substrate electrode.
The second substrate electrode is located between the first structure portion and the first substrate.
The second substrate electrode includes a third electrode portion and a fourth electrode portion electrically connected to the third electrode portion.
The fourth electrode portion is provided between the second structure electrode and the third portion.
The second connecting member is provided between the second structure electrode and the fourth electrode portion, and the second structure electrode is electrically connected to the fourth electrode portion.
The MEMS element includes a second element electrode, and the second element electrode is located between the element substrate and the third electrode portion, and is electrically connected to the third electrode portion. 9. The sensor according to any one of 9.

(Structure 19)
The element substrate contains silicon and contains silicon.
The sensor according to any one of configurations 1 to 18, wherein the first structure contains aluminum oxide and magnesium oxide.

(Structure 20)
The sensor according to any one of configurations 1 to 19, wherein the first substrate has transparency to visible light.

(Structure 21)
A first gap is provided between the first partial region and the MEMS element.
The sensor according to any one of configurations 1 to 20, wherein a second gap is provided between the MEMS element and the first portion.

(Structure 22)
The sensor according to the configuration 15 or 16, wherein a fourth gap is provided between the substrate portion and the second structure portion.

According to the embodiment, it is possible to provide a sensor capable of stable detection.

In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. ..

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with respect to the specific configuration of each element such as the first structure portion, the substrate portion, the first connecting member, and the MEMS element included in the sensor, the present invention can be similarly modified by appropriately selecting from a range known to those skilled in the art. It is included in the scope of the present invention as long as the same effect can be obtained.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, all sensors that can be appropriately designed and implemented by those skilled in the art based on the sensors described above as embodiments of the present invention also belong to the scope of the present invention as long as the gist of the present invention is included.

In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

10 ... MEMS element, 10U ... Element part, 16 ... Movable part, 16F ... Conductive layer, 18 ... Element substrate, 18E, 18F ... 1st and 2nd element electrodes, 18G ... Electrode, 18I ... Insulation part, 18S ... Support part , 18s ... element substrate side surface, 19 ... spring portion, 20 ... substrate portion, 21-23 ... first to third parts, 28 ... first substrate, 28E, 28F ... first, second substrate electrodes, 28Ea, 28Eb, 28Fc, 28Fd ... 1st, 2nd, 3rd, 4th electrode parts, 28L, 28M ... Conductive, 41, 42 ... 1st, 2nd connecting member, 41A ... Conductive paste, 41t, 41w ... Length, 45 ... Dispenser, 50 ... 1st structure part, 50SP ... Space, 51-55 ... 1st to 5th partial regions, 52f ... 1st surface, 58 ... 1st structure, 58C ... Conductive part, 58E, 58F ... First 1, 2nd structure electrode, 60 ... 2nd structure part, 110, 110a, 120 ... sensor, AR ... arrow, d1, d2 ... 1st, 2nd distance, dz ... distance, g1 to g4 ... 1st to 1st 4th gap

Claims (11)

A first structure portion including a first structure including a first partial region and a second partial region, and a first structure electrode provided in the second partial region.
A substrate portion separated from the first partial region in the first direction, the substrate portion includes a first substrate and a first substrate electrode, and the first substrate electrode includes the first structure portion and the first structure portion. Between the 1st substrate and the 1st substrate, the 1st substrate includes a 1st portion and a 2nd portion, and the direction from the 1st portion to the 2nd portion intersects the 1st direction, and the 1st substrate The electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion, and the second electrode portion includes the first structure electrode and the second portion. With the substrate portion provided between
A first connecting member provided between the first structure electrode and the second electrode portion and electrically connecting the first structure electrode to the second electrode portion.
A MEMS element provided between the first partial region and the first portion, wherein the MEMS element includes an element substrate and a first element electrode, and at least one of the second partial regions from the element substrate. The second direction to the portion intersects the first direction, and the first element electrode is between the element substrate and the first electrode portion and is electrically connected to the first electrode portion. , The MEMS element and
Sensor with. The sensor according to claim 1, wherein the first element electrode is in contact with the first electrode portion. The absolute value of the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the element substrate is the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the first structure. The sensor according to claim 1 or 2, which is smaller than the absolute value of. The element substrate includes a side surface of the element substrate that intersects the second direction.
The sensor according to any one of claims 1 to 3, wherein the side surface of the element substrate is separated from the second partial region. The MEMS element includes a movable part and a support part, and includes a movable part and a support part.
The movable portion and the support portion are located between the element substrate and the first portion.
The support portion is fixed to the element substrate and
The movable portion is supported by the support portion and is supported by the support portion.
The sensor according to any one of claims 1 to 4, wherein there is a third gap between the element substrate and the movable portion. The first structure further includes a third partial region.
The positions of at least a part of the second partial region in the first direction are the position of at least a part of the first partial region in the first direction and the position of at least a part of the third partial region in the first direction. Between and the position in
The positions of at least a part of the second partial region in the second direction are the position of at least a part of the first partial region in the second direction and the position of at least a part of the third partial region in the second direction. The sensor according to any one of claims 1 to 5, which is between the position and the position of the above. The sensor according to claim 6, wherein the direction from the first substrate to at least a part of the third partial region is along the second direction. The sensor according to claim 6 or 7, wherein the third partial region is provided around the first substrate in a plane intersecting the first direction. Further equipped with a second structure part,
The sensor according to any one of claims 6 to 8, wherein the MEMS element and the substrate portion are located between the first structure portion and the second structure portion. The second structure portion is connected to the third partial region and is connected to the third structural portion.
The first structure portion and the second structure portion maintain the space surrounded by the first structure portion and the second structure portion at less than 1 atm.
The sensor according to claim 9, wherein the MEMS element and the substrate portion are in the space. With a second connecting member
The first structure further includes a fourth partial region, and the positions of the first partial region in the second direction are the position of the fourth partial region in the second direction and the second in the second direction. Between the position in the subregion and
The first structure portion further includes a second structure electrode.
The second structure electrode is provided in the fourth partial region.
The first substrate further comprises a third portion, and in the second direction, the first portion is between the third portion and the second portion.
The substrate portion further includes a second substrate electrode.
The second substrate electrode is located between the first structure portion and the first substrate.
The second substrate electrode includes a third electrode portion and a fourth electrode portion electrically connected to the third electrode portion.
The fourth electrode portion is provided between the second structure electrode and the third portion.
The second connecting member is provided between the second structure electrode and the fourth electrode portion, and the second structure electrode is electrically connected to the fourth electrode portion.
The MEMS element includes a second element electrode, and the second element electrode is located between the element substrate and the third electrode portion and is electrically connected to the third electrode portion. The sensor according to any one of ~ 5.

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