JP7222838B2 - sensor - Google Patents

Description

Embodiments of the invention relate to sensors.

There are sensors such as gyro sensors. Stable operation is desired in the sensor.

Japanese Patent No. 3503133

Embodiments of the present invention provide sensors capable of stable operation.

According to embodiments of the present invention, a sensor includes a first structure portion, a substrate portion, a first connecting member and a MEMS element. The first structure portion includes a first structure including a first partial region and a second partial region, and a first structure electrode provided in the second partial region. The substrate portion is separated from the first partial region in a first direction. The substrate part includes a first substrate and a first substrate electrode. The first substrate electrode is between the first structure portion and the first substrate. The first substrate includes a first portion and a second portion. A direction from the first portion to the second portion intersects the first direction. The first substrate electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion. The second electrode portion is provided between the first structure electrode and the second portion. The first connection member is provided between the first structure electrode and the second electrode portion, and electrically connects the first structure electrode to the second electrode portion. The MEMS element is provided between the first partial region and the first portion. The MEMS device includes a device substrate and first device electrodes. A second direction from the element substrate to at least part of the second partial region intersects with the first direction. The first element electrode is between the element substrate and the first electrode portion and electrically connected to the first electrode portion.

1A and 1B are schematic cross-sectional views illustrating the sensor according to the first embodiment. FIG. 2A and 2B are schematic cross-sectional views illustrating the sensor according to the first embodiment. FIG. FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment; FIG. 4A to 4C are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 5A to 5C are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 6A and 6B are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. 7A to 7C are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment. FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment. 9A and 9B are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the second embodiment. FIG. 10 is a schematic cross-sectional view illustrating part of the sensor according to the embodiment; FIG. 11 is a schematic plan view illustrating part of the sensor according to the embodiment;

Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the size ratio between portions, and the like are not necessarily the same as the actual ones. Even when the same parts are shown, the dimensions and ratios may be different depending on the drawing.
In the present specification and each figure, the same reference numerals are given to the same elements as those described above with respect to the previous figures, and detailed description thereof will be omitted as appropriate.

(First embodiment)
1(a), 1(b), 2(a) and 2(b) are schematic cross-sectional views illustrating the sensor according to the first embodiment.
As shown in FIG. 1A, the sensor 110 according to the embodiment includes a first structure section 50, a substrate section 20, a MEMS element 10 and a first connection member 41. As shown in FIG.

The first structure section 50 includes a first structure 58 and a first structure electrode 58E. A first structure 58 includes a first partial region 51 and a second partial region 52 . In this example, the first structure 58 further includes third to fifth partial regions 53 to 55 and the like. Boundaries of the first to fifth partial regions 51 to 55 may be unclear. Examples of the third to fifth partial regions 53 to 55 will be described later. The first structure electrode 58E is provided in the second partial region 52 . For example, the first structure electrode 58E may be connected to the conductive portion 58C. The conductive portion 58C passes through the first structure 58 and is exposed to the outside of the first structure 58 . The first structure 58 is, for example, insulating.

For example, the second partial region 52 includes a first surface 52f provided with the first structure electrode 58E. The first partial region 51 recedes with respect to the first surface 52f. For example, the first partial region 51 is the recess of the first structure 58 . The second partial area 52 corresponds to a convex portion when the first partial area 51 is used as a reference. A portion having the first surface 52 f provided with the first structure electrode 58 E corresponds to the second partial region 52 .

The substrate section 20 and the MEMS element 10 are included in the element section 10U. FIG. 1B illustrates the element unit 10U. FIG. 2(a) illustrates the MEMS element 10. FIG. FIG. 2B illustrates the substrate section 20. As shown in FIG.

As shown in FIG. 1A, the substrate portion 20 is separated from the first partial region 51 in the first direction.

Let the first direction be the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

The direction from the first partial region 51 to at least part of the second partial region 52 intersects the first direction (Z-axis direction).

As shown in FIG. 1A, the substrate section 20 includes a first substrate 28 and a first substrate electrode 28E. The first substrate electrode 28E is between the first structure portion 50 and the first substrate 28. As shown in FIG. The first substrate 28 is, for example, insulating.

As shown in FIGS. 1(b) and 2(b), the first substrate 28 includes a first portion 21 and a second portion 22. As shown in FIG. The direction from the first portion 21 to the second portion 22 intersects with the first direction (Z-axis direction). The direction from the first portion 21 to the second portion 22 is, for example, the X-axis direction.

As shown in FIGS. 1(a) and 2(b), the first substrate electrode 28E includes a first electrode portion 28Ea and a second electrode portion 28Eb. The second electrode portion 28Eb is electrically connected to the first electrode portion 28Ea. For example, the second electrode portion 28Eb is continuous with the first electrode portion 28Ea. As shown in FIG. 1A, the second electrode portion 28Eb is provided between the first structure electrode 58E and the second portion 22. As shown in FIG.

A conductive film 28M may be provided between the first substrate electrode 28E and the first substrate 28, as shown in FIG. 2(b). The conductive film 28M may be selectively provided in the connection region, for example. The thickness of the conductive film 28M is relatively thick. For example, the thickness of the conductive film 28M may be thicker than the thickness of the first substrate electrode 28E. By providing the conductive film 28M, the distance in the first direction (Z-axis direction) between the element substrate 18 and the first portion 21 can be stably set to an appropriate value.

As shown in FIG. 1A, the first connection member 41 is provided between the first structure electrode 58E and the second electrode portion 28Eb. The first connection member 41 electrically connects the first structure electrode 58E to the second electrode portion 28Eb. The first connection member 41 includes, for example, conductive paste.

As shown in FIG. 1( a ), the MEMS element 10 is provided between the first partial region 51 and the first portion 21 . For example, a first gap g1 is provided between the first partial region 51 and the MEMS element 10 . For example, a second gap g2 is provided between the MEMS element 10 and the first portion 21 .

As shown in FIGS. 1A and 2A, the MEMS element 10 includes an element substrate 18 and first element electrodes 18E. As shown in FIG. 1A, the first element electrode 18E is between the element substrate 18 and the first electrode portion 28Ea. The first element electrode 18E is electrically connected to the first electrode portion 28Ea. A second direction from the element substrate 18 to at least part of the second partial region 52 intersects with the first direction (Z-axis direction). For example, the second direction is perpendicular to the first direction. The second direction is, for example, the X-axis direction.

In the embodiment, the first substrate electrode 28E is electrically connected to the first structure electrode 58E by the first connection member 41. As shown in FIG. For example, a first reference example can be considered in which the first substrate electrode 28E is connected to the first structure electrode 58E by a wire or the like. In the first reference example, the size of the sensor is increased. In the embodiment, by using the first connecting member 41, a small size and a stable connection can be obtained.

In embodiments, at least a portion of the MEMS element 10 resides in a recessed portion of the first structure 58, as shown in FIG. 1(a). For example, the direction from the element substrate 18 to at least part of the second partial region 52 intersects with the first direction (Z-axis direction). Furthermore, a first gap g<b>1 is provided between the first partial region 51 and the MEMS element 10 . The MEMS element 10 is suspended, for example, from the substrate section 20 , and the substrate section 20 is supported by the second partial region 52 of the first structural body 58 via the first connection member 41 . The MEMS element 10 can move in the recess of the first structure 58 when various stresses are applied to the element portion 10U including the MEMS element 10 . For example, the MEMS element 10 can move even when the connecting portion is deformed due to stress caused by a change in temperature. Thereby, for example, the connection of the first connection member 41 is stable.

For example, the MEMS element 10 and the substrate section 20 are strongly bonded by the first electrode portion 28Ea and the first element electrode 18E. On the other hand, the first connecting member 41 is more easily deformed than the joining portion between the first electrode portion 28Ea and the first element electrode 18E. For example, even when various kinds of stress are generated, deformation of the first connection member 41 suppresses unstable bonding between the first electrode portion 28Ea and the first element electrode 18E.

By providing the first gap g1 between the first partial region 51 and the MEMS element 10, the MEMS element 10 can be displaced even when the first connection member 41 is deformed. As a result, adverse effects on the characteristics of the MEMS element 10 can be suppressed. The deformation of the first connection member 41 can be made difficult to be restricted.

According to the embodiment, the connection between the first electrode portion 28Ea and the first element electrode 18E is stable even when heat or mechanical force is applied. Adverse effects on the characteristics of the MEMS element 10 can be suppressed. Electrical and mechanical connections are also stable due to the first connection member 41 . According to the embodiment, it is possible to provide a sensor capable of stable operation. According to embodiments, it is easy to reduce the size. Cost reduction is easy.

As shown in FIG. 1A, for example, the length 41t (thickness) of the first connection member 41 in the first direction (Z-axis direction) is It is shorter than the length 41w (width) (for example, in the X-axis direction). The length in the cross-sectional direction of the first connection member 41 is longer than the length in the direction of the current passing through the first connection member 41 . This makes it easier to obtain low resistance. For example, the connection area can be increased by using the first connection member 41 without using wires.

In the embodiment, for example, the first device electrode 18E is in contact with the first electrode portion 28Ea. The first device electrode 18E and the first electrode portion 28Ea are, for example, joined together. The first element electrode 18E and the first electrode portion 28Ea are connected, for example, by joining two metals. This allows for a more stable connection. It can be connected with low resistance.

For example, the difference between the coefficient of linear expansion of the first substrate 28 and the coefficient of linear expansion of the element substrate 18 is small. For example, the absolute value of the difference between the linear expansion coefficient of the first substrate 28 and the linear expansion coefficient of the element substrate 18 is the difference between the linear expansion coefficient of the first substrate 28 and the linear expansion coefficient of the first structure 58. Less than the absolute value of the difference. Since the difference between the coefficient of linear expansion of the first substrate 28 and the coefficient of linear expansion of the element substrate 18 is small, the first electrode portion 28Ea and the first element electrode 18E are stably connected to each other.

Even when the difference between the coefficient of linear expansion of the first substrate 28 and the coefficient of linear expansion of the first structure 58 is large, the first connection member 41 is easily deformed, and the difference in the coefficient of linear expansion of these coefficients causes adverse effects. is less likely to occur.

For example, device substrate 18 includes silicon. The first substrate 28 includes, for example, a material having a coefficient of linear expansion close to that of silicon. The first substrate 28 may comprise glass, for example.

The first structure 58 includes, for example, at least one selected from the group consisting of aluminum oxide and magnesium oxide. The first structure 58 may contain an organic binder or the like. These materials are easy to obtain high insulation and high reliability. The first structure part 50 may contain an electrode metal.

As shown in FIGS. 1A and 2A, the element substrate 18 includes an element substrate side surface 18s. The element substrate side surface 18s crosses the second direction (for example, the X-axis direction). As shown in FIG. 1A, the element substrate side surface 18s is separated from at least a portion of the second partial region 52 in the second direction. Since the element substrate side surface 18s is separated from the second partial region 52, the movement margin of the MEMS element 10 is increased.

As shown in FIGS. 1(b) and 2(a), the MEMS element 10 includes a movable portion 16 and a support portion 18S. As shown in FIG. 1B, the movable portion 16 and the support portion 18S are between the element substrate 18 and the first portion 21. As shown in FIG. The support portion 18S is fixed to the element substrate 18 . In this example, an insulating portion 18I is provided between the element substrate 18 and the support portion 18S. The support portion 18S is fixed to the element substrate 18 via the insulating portion 18I. The movable portion 16 is supported by the support portion 18S. For example, as will be described later, the movable portion 16 is supported by the support portion 18S via a spring portion.

As shown in FIGS. 1(b) and 2(a), there is a third gap g3 between the element substrate 18 and the movable portion 16. As shown in FIG. By providing the third gap g3 between the element substrate 18 and the movable portion 16, the movable portion 16 can move. As will be described later, at least a portion of the movable portion 16 forms a capacitance. As the movable portion 16 is displaced, the capacitance changes. For example, the movable portion 16 is displaced due to acceleration or the like. A value corresponding to the capacitance based on this displacement can be detected. Acceleration or the like can be detected by detecting a value corresponding to the capacitance. The MEMS element 10 is, for example, a gyro sensor.

For example, the distance dz (see FIG. 1B) in the first direction (Z-axis direction) between the movable portion 16 and the first portion 21 is, for example, 1 μm or more. By setting the distance dz to be 1 μm or more, it is possible to prevent the movement of the movable portion 16 from being restricted.

As shown in FIG. 1A, for example, the distance in the first direction (Z-axis direction) between the element substrate 18 and the first portion 21 is defined as a first distance d1. Let the distance in the first direction (Z-axis direction) between the second partial region 52 and the second portion 22 be a second distance d2. The first distance d1 is shorter than the second distance d2. Since the second distance d2 is long, for example, the leeway in the shape of the first connection member 41 is increased. More stable and good operation can be obtained.

As shown in FIG. 1A, the first structure 58 may further include a third partial region 53 in addition to the first partial region 51 and the second partial region 52 . The position of at least part of the second partial area 52 in the first direction (Z-axis direction) is the same as the position of at least part of the first partial area 51 in the first direction and the position of at least part of the third partial area 53 in the first direction. between a position in one direction and The position of at least part of the second partial area 52 in the second direction (for example, the X-axis direction) is the position of at least part of the first partial area 51 in the second direction, and the position of at least part of the third partial area 53 in the second direction. and a position in the second direction. As already explained, the first partial region 51 recedes with respect to the first surface 52f of the second partial region 52 . The third partial region 53 protrudes, for example, with respect to the first surface 52f. By providing the third partial region 53, for example, the substrate section 20 is protected.

As shown in FIG. 1A, the direction from the element substrate 18 to at least part of the second partial region 52 is along the second direction (for example, the X-axis direction). For example, the direction from the first substrate 28 to at least part of the third partial region 53 is along the second direction (for example, the X-axis direction).

As shown in FIG. 1( a ), the sensor 110 may further include a second connection member 42 . First structure 58 further includes a fourth partial region 54 . The position of the first partial region 51 in the second direction (eg, X-axis direction) is between the position of the fourth partial region 54 in the second direction and the position of the second partial region 52 in the second direction. . The first structure section 50 further includes a second structure electrode 58F. A second structure electrode 58</b>F is provided in the fourth partial region 54 .

As shown in FIGS. 1(a), 1(b) and 2(b), the first substrate 28 further includes a third portion 23. As shown in FIG. For example, the first portion 21 is between the third portion 23 and the second portion 22 in the second direction (eg, the X-axis direction). The boundaries of these parts may be vague.

As shown in FIGS. 1(a), 1(b) and 2(b), the substrate section 20 further includes a second substrate electrode 28F. As shown in FIG. 1A, the second substrate electrode 28F is between the first structure portion 50 and the first substrate 28. As shown in FIG. As shown in FIGS. 1(a) and 2(b), the second substrate electrode 28F includes a third electrode portion 28Fc and a fourth electrode portion 28Fd. The fourth electrode portion 28Fd is electrically connected to the third electrode portion 28Fc. For example, the fourth electrode portion 28Fd is continuous with the third electrode portion 28Fc.

As shown in FIG. 1A, the fourth electrode portion 28Fd is provided between the second structure electrode 58F and the third portion 23. As shown in FIG. The second connection member 42 is provided between the second structure electrode 58F and the fourth electrode portion 28Fd. The second connection member 42 electrically connects the second structure electrode 58F with the fourth electrode portion 28Fd. The second connection member 42 contains, for example, the same material as the first connection member 41 . The second connection member 42 contains, for example, conductive paste.

As shown in FIG. 1B, the MEMS element 10 includes a second element electrode 18F. As shown in FIG. 1A, the second element electrode 18F is between the element substrate 18 and the third electrode portion 28Fc. The second element electrode 18F is electrically connected to the third electrode portion 28Fc. For example, the second element electrode 18F is in contact with the third electrode portion 28Fc. The second element electrode 18F and the third electrode portion 28Fc are, for example, joined together. The second element electrode 18F and the third electrode portion 28Fc are connected, for example, by joining two metals. This allows for a more stable connection. It can be connected with low resistance.

For example, multiple electrodes of the MEMS element 10 are connected to multiple electrodes of the substrate section 20, respectively. A plurality of electrodes of the substrate section 20 are connected to a plurality of electrodes of the first structure section 50, respectively. A plurality of portions of the MEMS element 10 are held by the substrate portion 20 . A plurality of portions of the substrate portion 20 are held by the first structure portion 50 . A more stable hold is obtained.

As shown in FIG. 2(a), the MEMS element 10 may further include another electrode 18G. In this example, the electrode 18G is provided on the support portion 18S. For example, the capacitance between the electrode 18G and the first element electrode 18E may be detected. For example, the capacitance between the electrode 18G and the second element electrode 18F may be detected.

As shown in FIG. 1( a ), the first structure 58 may further include a fifth partial region 55 . The position of at least part of the fourth partial area 54 in the first direction (Z-axis direction) is the same as the position of at least part of the fifth partial area 55 in the first direction and the position of at least part of the first partial area 51 in the first direction. between a position in one direction and The position of at least part of the fourth partial area 54 in the second direction (for example, the X-axis direction) is the position of at least part of the fifth partial area 55 in the second direction, and the position of at least part of the first partial area 51 in the second direction. and a position in the second direction. As shown in FIG. 1A, the direction from at least part of the fourth partial region 54 to the element substrate 18 is along the second direction (for example, the X-axis direction). For example, the direction from at least part of the fifth partial region 55 to the first substrate 28 is along the second direction (for example, the X-axis direction).

For example, the fifth partial area 55 may be continuous with the third partial area 53 . The fifth partial region 55 may be discontinuous with the third partial region 53 . For example, the fourth partial area 54 may be continuous with the second partial area 52 . The fourth partial region 54 may be discontinuous with the second partial region 52 .

FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment; FIG.
FIG. 3 is a plan view seen from the arrow AR in FIG. 1(a). FIG. 1(a) is a cross-sectional view corresponding to the A1-A2 line in FIG.

As shown in FIG. 3 , the fourth partial area 54 may be continuous with the second partial area 52 . In this case, the fourth partial region 54 may be regarded as part of the annular second partial region 52 . For example, the second partial region 52 is provided around the element substrate 18 on a plane (for example, the XY plane) intersecting the first direction (X-axis direction). The second partial region 52 surrounds the element substrate 18 on the XY plane.

As shown in FIG. 3 , the fifth partial area 55 may be continuous with the third partial area 53 . In this case, the fifth partial area 55 may be regarded as part of the annular third partial area 53 . For example, the third partial region 53 is provided around the first substrate 28 on a plane (for example, the XY plane) intersecting the first direction (X-axis direction). The third partial region 53 surrounds the first substrate 28 in the XY plane.

For example, a plurality of first structure electrodes 58E may be provided. A plurality of second electrode portions 28Eb may be provided. For example, a plurality of first connection members 41 may be provided. One of the plurality of first connection members 41 is provided between one of the plurality of first structure electrodes 58E and one of the plurality of second electrode portions 28Eb. One of the plurality of first connection members 41 electrically connects one of the plurality of first structure electrodes 58E to one of the plurality of second electrode portions 28Eb.

For example, a plurality of first element electrodes 18E are provided. A plurality of first electrode portions 28Ea are provided. One of the multiple first element electrodes 18E is electrically connected to one of the multiple first electrode portions 28Ea.

An example of a method for manufacturing the sensor 110 will be described below.
4(a) to 4(c), 5(a) to 5(c), 6(a), 6(b), and 7(a) to 7(c) are 4A and 4B are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the first embodiment;

As shown in FIG. 4A, an element substrate 18 is prepared. An insulating portion 18I is provided on the element substrate 18 . A conductive layer 16F is provided on the insulating portion 18I. Conductive layer 16F includes, for example, a semiconductor such as silicon. The conductive layer 16F is, for example, SOI (Silicon on Insulator). The material of the element substrate 18 is arbitrary.

As shown in FIG. 4B, after the conductive film is formed, the conductive film is processed to obtain electrodes (for example, the first element electrode 18E, the second element electrode 18F, and the electrode 18G. The conductive film ( electrodes) contain, for example, Au.

As shown in FIG. 4C, the conductive layer 16F is processed. Thereby, the movable portion 16 is obtained.

As shown in FIG. 5(a), a first substrate 28 is prepared. The first substrate 28 includes, for example, glass. For example, first substrate 28 may be transparent to visible light. This facilitates an alignment process, which will be described later.

As shown in FIG. 5B, a conductive film 28M is formed. The conductive film 28M is, for example, selectively provided in a connection region (for example, a pad portion). The thickness of the conductive film 28M is, for example, approximately 1 μm.

As shown in FIG. 5C, substrate electrodes (eg, first substrate electrode 28E and second substrate electrode 28F) are formed. The substrate electrode contains Au, for example. A substrate electrode is formed by vapor deposition, for example.

As shown in FIG. 6A, the first substrate electrode 28E is opposed to the first device electrode 18E. The second substrate electrode 28F is opposed to the second element electrode 18F. For example, joining of metals (for example, Au) is performed.

As shown in FIG. 6B, part of the element substrate 18 is removed. For example, dicing is performed. For example, element isolation is performed. For example, pad portions (eg, a portion of the first substrate electrode 28E and a portion of the second substrate electrode 28F) are exposed. Thereby, the element unit 10U is obtained.

As shown in FIG. 7A, the first structure section 50 is prepared.

As shown in FIG. 7B, a conductive paste 41A is applied on the first structure electrode 58E and the second structure electrode 58F. Application is performed by a dispenser 45 or the like, for example.

As shown in FIG. 7C, the element section 10U is mounted on the first structure section 50. Then, as shown in FIG. At this time, if the first substrate 28 is transparent to visible light, alignment is facilitated. By performing heat treatment, the first connection member 41 and the second connection member 42 are formed from the conductive paste 41A, and connection is performed. The sensor 110 is thus obtained.

(Second embodiment)
FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the second embodiment.
As shown in FIG. 8 , the sensor 120 according to the embodiment further includes a second structural body section 60 in addition to the first structural body section 50 , the substrate section 20 , the MEMS element 10 and the first connection member 41 . The configuration of the first structural body portion 50 , the substrate portion 20 , the MEMS element 10 and the first connection member 41 in the sensor 120 is similar to that of the first structural body portion 50 , the substrate portion 20 , the MEMS element 10 and the first connection member 41 in the sensor 110 . The configuration may be the same as that of the member 41 . An example of the second structure portion 60 will be described below.

Between the first structure part 50 and the second structure part 60 are the MEMS element 10 and the substrate part 20 . The second structure portion 60 is connected to the third partial region 53 . For example, the first structure part 50 and the second structure part 60 maintain the space 50SP surrounded by the first structure part 50 and the second structure part 60 at less than 1 atmospheric pressure. The MEMS element 10 and the substrate section 20 are within the space 50SP. The first structure section 50 and the second structure section 60 hermetically seal the space 50SP. For example, a fourth gap g4 is provided between the substrate portion 20 (first substrate 28) and the second structure portion 60. As shown in FIG.

By reducing the pressure in the space 50SP, the movement of the movable portion 16 becomes easier. For example, high sensitivity is obtained. For example, the air pressure in the first gap g1 is substantially the same as the air pressure in the second gap g2.

The second structure part 60 includes, for example, at least one selected from the group consisting of metal, ceramic, and glass. Metals include, for example, iron, nickel and cobalt. Ceramics include, for example, aluminum oxide and the like.

9A and 9B are schematic cross-sectional views illustrating the method for manufacturing the sensor according to the second embodiment.
As shown in FIG. 9B, the sensor 110 is subjected to heat treatment, degassing, and the like. After that, as shown in FIG. 9B, for example, the second structure part 60 is joined to the first structure part 50 in a reduced pressure environment. The sensor 120 is thus obtained.

FIG. 10 is a schematic cross-sectional view illustrating part of the sensor according to the embodiment;
FIG. 10 illustrates the element unit 10U. As shown in FIG. 10 , in the sensor 110 a according to the embodiment as well, the element section 10U includes the substrate section 20 and the MEMS element 10 . A conductive film 28L is provided on the surface of the first substrate 28 in the sensor 110a. The conductive film 28L is, for example, wiring. A conductive film 28M is provided between the conductive film 28L and the first substrate electrode 28E. Another conductive film 28M is provided between the conductive film 28L and the second substrate electrode 28F. The first substrate electrode 28E and the second substrate electrode 28F are, for example, metal films for bonding. The element unit 10U having such a configuration may be applied to the embodiment.

FIG. 11 is a schematic plan view illustrating part of the sensor according to the embodiment;
FIG. 11 illustrates the MEMS element 10. As shown in FIG. As shown in FIG. 11, the movable portion 16 is supported by the spring portion 19 connected to the support portion 18S.

Embodiments may include the following configurations (eg, technical proposals).
(Configuration 1)
a first structure portion including a first structure including a first partial region and a second partial region; and a first structure electrode provided in the second partial region;
A substrate portion separated from the first partial region in a first direction, the substrate portion including a first substrate and a first substrate electrode, the first substrate electrode comprising the first structure portion and the first substrate electrode. a substrate, wherein the first substrate includes a first portion and a second portion, a direction from the first portion to the second portion intersects the first direction; The electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion, wherein the second electrode portion is a portion between the first structure electrode and the second portion. the substrate portion provided therebetween;
a first connection member provided between the first structure electrode and the second electrode portion, the first connection member electrically connecting the first structure electrode to the second electrode portion;
A MEMS element provided between the first partial region and the first portion, wherein a first gap is provided between the first partial region and the MEMS element, and the MEMS element and the first the MEMS device includes a device substrate and a first device electrode, and a second direction from the device substrate to at least a portion of the second partial region is the first the MEMS element intersecting the direction, wherein the first element electrode is between the element substrate and the first electrode portion and electrically connected to the first electrode portion;
sensor with

(Configuration 2)
The sensor of configuration 1, wherein the first device electrode contacts the first electrode portion.

(Composition 3)
The absolute value of the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the element substrate is the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the first structure. A sensor according to configuration 1 or 2, which is less than the absolute value of

(Composition 4)
the element substrate includes an element substrate side surface that intersects with the second direction;
4. The sensor according to any one of configurations 1 to 3, wherein the side surface of the element substrate is separated from the second partial area.

(Composition 5)
The MEMS element includes a movable portion and a support portion,
the movable portion and the support portion are between the element substrate and the first portion;
The support portion is fixed to the element substrate,
The movable portion is supported by the support portion,
5. The sensor of any one of configurations 1-4, wherein there is a third gap between the device substrate and the movable portion.

(Composition 6)
The sensor according to any one of configurations 1 to 5, wherein the distance in the first direction between the movable portion and the first portion is 1 μm or more.

(Composition 7)
7. The sensor according to any one of configurations 1 to 6, wherein the length of the first connecting member in the first direction is shorter than the length of the first connecting member in a direction crossing the first direction.

(Composition 8)
Configuration 1, wherein a first distance in the first direction between the element substrate and the first portion is shorter than a second distance in the first direction between the second partial region and the second portion. 8. The sensor of any one of -7.

(Composition 9)
the second partial region includes a first surface provided with the first structure electrode;
9. The sensor of any one of configurations 1-8, wherein the first partial area is recessed with respect to the first surface.

(Configuration 10)
The sensor according to any one of configurations 1 to 9, wherein the second partial region is provided around the element substrate in a plane intersecting the first direction.

(Composition 11)
A plurality of the first structure electrodes are provided,
A plurality of the second electrode portions are provided,
A plurality of the first connection members are provided,
One of the plurality of first connection members is provided between one of the plurality of first structure electrodes and one of the plurality of second electrode portions, and is provided between one of the plurality of first structure electrodes. electrically connecting said one with said one of said plurality of second electrode portions;
A plurality of the first element electrodes are provided,
A plurality of the first electrode portions are provided,
11. The sensor of any one of configurations 1-10, wherein one of the plurality of first element electrodes is electrically connected to one of the plurality of first electrode portions.

(Composition 12)
the first structure further includes a third partial region,
The position of at least part of the second partial area in the first direction is the position of at least part of the first partial area in the first direction and the position of at least part of the third partial area in the first direction. is between a position in and
The position of at least part of the second partial area in the second direction is the position of at least part of the first partial area in the second direction and the position of at least part of the third partial area in the second direction. 12. The sensor of any one of configurations 1-11, between a position at

(Composition 13)
13. The sensor of configuration 12, wherein a direction from the first substrate to at least part of the third partial area is along the second direction.

(Composition 14)
14. The sensor according to configuration 12 or 13, wherein the third partial area is provided around the first substrate in a plane intersecting the first direction.

(Composition 15)
further comprising a second structure,
15. The sensor of any one of arrangements 12-14, wherein the MEMS element and the substrate portion are between the first structure portion and the second structure portion.

(Composition 16)
The second structure portion is connected to the third partial region,
the first structure part and the second structure part maintain a space surrounded by the first structure part and the second structure part at less than 1 atmospheric pressure;
16. The sensor of configuration 15, wherein the MEMS element and the substrate portion are within the space.

(Composition 17)
17. The sensor of any one of configurations 1-16, wherein the first connecting member comprises a conductive paste.

(Composition 18)
further comprising a second connection member;
The first structure further includes a fourth partial region, and the position of the first partial region in the second direction is equal to the position of the fourth partial region in the second direction and the second partial region in the second direction. is between a position in the subregion and
The first structure part further includes a second structure electrode,
The second structure electrode is provided in the fourth partial region,
said first substrate further comprising a third portion, said first portion being between said third portion and said second portion in said second direction;
The substrate portion further includes a second substrate electrode,
the second substrate electrode is between the first structure portion and the first substrate;
the second substrate electrode includes a third electrode portion and a fourth electrode portion electrically connected to the third electrode portion;
the fourth electrode portion is provided between the second structure electrode and the third portion;
the second connection member is provided between the second structure electrode and the fourth electrode portion and electrically connects the second structure electrode to the fourth electrode portion;
Configurations 1 to 1, wherein the MEMS element includes a second element electrode, the second element electrode being between the element substrate and the third electrode portion and electrically connected to the third electrode portion 10. The sensor according to any one of 9.

(Composition 19)
The element substrate contains silicon,
19. The sensor of any one of configurations 1-18, wherein the first structure comprises aluminum oxide and magnesium oxide.

(Configuration 20)
20. The sensor of any one of arrangements 1-19, wherein the first substrate is transparent to visible light.

(Composition 21)
A first gap is provided between the first partial region and the MEMS element,
21. The sensor of any one of arrangements 1-20, wherein a second gap is provided between the MEMS element and the first portion.

(Composition 22)
17. The sensor of configuration 15 or 16, wherein a fourth gap is provided between the substrate portion and the second structure portion.

According to the embodiment, a sensor capable of stable detection can be provided.

In the present specification, "perpendicular" and "parallel" include not only strict perpendicularity and strict parallelism, but also variations in the manufacturing process, for example, and may be substantially perpendicular and substantially parallel. .

The embodiments of the present invention have been described above with reference to specific examples. However, the invention is not limited to these specific examples. For example, with respect to the specific configuration of each element included in the sensor, such as the first structural body portion, the substrate portion, the first connecting member, and the MEMS element, those skilled in the art can apply the present invention in the same manner by appropriately selecting from a range known to those skilled in the art. It is included in the scope of the present invention as long as it can be implemented and the same effect can be obtained.

Any combination of two or more elements of each specific example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

In addition, based on the sensor described above as the embodiment of the present invention, all sensors that can be implemented by those skilled in the art by appropriately modifying the design also belong to the scope of the present invention as long as they include the gist of the present invention.

In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modifications and modifications, and it is understood that these modifications and modifications also belong to the scope of the present invention. .

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and equivalents thereof.

DESCRIPTION OF SYMBOLS 10... MEMS element 10U... Element part 16... Movable part 16F... Conductive layer 18... Element substrate 18E, 18F... First and second element electrodes 18G... Electrode 18I... Insulating part 18S... Support part , 18s... element substrate side surface, 19... spring portion, 20... substrate portion, 21 to 23... first to third portions, 28... first substrate, 28E, 28F... first and second substrate electrodes, 28Ea, 28Eb, 28Fc, 28Fd... first, second, third and fourth electrode portions 28L, 28M... conductive film 41, 42... first and second connection members 41A... conductive paste 41t, 41w... length 45 Dispenser 50 First structure portion 50SP Space 51 to 55 First to fifth partial regions 52f First surface 58 First structure 58C Conductive portion 58E, 58F Third 1, second structure electrode 60 second structure portion 110, 110a, 120 sensor AR arrow d1, d2 first and second distances dz distance g1 to g4 first to fourth gap

Claims (11)

a first structure portion including a first structure including a first partial region and a second partial region; and a first structure electrode provided in the second partial region;
A substrate portion separated from the first partial region in a first direction, the substrate portion including a first substrate and a first substrate electrode, the first substrate electrode comprising the first structure portion and the first substrate electrode. a substrate, wherein the first substrate includes a first portion and a second portion, a direction from the first portion to the second portion intersects the first direction; The electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion, wherein the second electrode portion is a portion between the first structure electrode and the second portion. the substrate portion provided therebetween;
a first connection member provided between the first structure electrode and the second electrode portion, the first connection member electrically connecting the first structure electrode to the second electrode portion;
A MEMS element provided between the first partial region and the first portion, the MEMS device including a device substrate and a first device electrode, and extending from the device substrate to at least one of the second partial regions. A second direction to the portion intersects the first direction, and the first device electrode is between the device substrate and the first electrode portion and is electrically connected to the first electrode portion. , the MEMS element;
with
The absolute value of the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the element substrate is the difference between the linear expansion coefficient of the first substrate and the linear expansion coefficient of the first structure. less than the absolute value of the sensor. 2. The sensor of claim 1, wherein said first device electrode contacts said first electrode portion. the element substrate includes an element substrate side surface that intersects with the second direction;
3. The sensor according to claim 1 , wherein said element substrate side surface is separated from said second partial area. The MEMS element includes a movable portion and a support portion,
the movable portion and the support portion are between the element substrate and the first portion;
The support portion is fixed to the element substrate,
The movable portion is supported by the support portion,
The sensor according to any one of claims 1 to 3 , wherein there is a third gap between said element substrate and said movable portion. the first structure further includes a third partial region,
The position of at least part of the second partial area in the first direction is the position of at least part of the first partial area in the first direction and the position of at least part of the third partial area in the first direction. is between a position in and
The position of at least part of the second partial area in the second direction is the position of at least part of the first partial area in the second direction and the position of at least part of the third partial area in the second direction. A sensor according to any one of claims 1 to 4 , which is between a position at 6. The sensor according to claim 5 , wherein a direction from said first substrate to at least part of said third partial area is along said second direction. 7. The sensor according to claim 5 or 6 , wherein said third partial area is provided around said first substrate in a plane intersecting said first direction. further comprising a second structure,
The sensor according to any one of claims 5 to 7 , wherein the MEMS element and the substrate part are between the first structure part and the second structure part. The second structure portion is connected to the third partial region,
the first structure part and the second structure part maintain a space surrounded by the first structure part and the second structure part at less than 1 atmospheric pressure;
9. The sensor of Claim 8 , wherein the MEMS element and the substrate portion are within the space. a first structure portion including a first structure including a first partial region and a second partial region; and a first structure electrode provided in the second partial region;
A substrate portion separated from the first partial region in a first direction, the substrate portion including a first substrate and a first substrate electrode, the first substrate electrode comprising the first structure portion and the first substrate electrode. a substrate, wherein the first substrate includes a first portion and a second portion, a direction from the first portion to the second portion intersects the first direction; The electrode includes a first electrode portion and a second electrode portion electrically connected to the first electrode portion, wherein the second electrode portion is a portion between the first structure electrode and the second portion. the substrate portion provided therebetween;
a first connection member provided between the first structure electrode and the second electrode portion, the first connection member electrically connecting the first structure electrode to the second electrode portion;
A MEMS element provided between the first partial region and the first portion, the MEMS device including a device substrate and a first device electrode, and extending from the device substrate to at least one of the second partial regions. A second direction to the portion intersects the first direction, and the first device electrode is between the device substrate and the first electrode portion and is electrically connected to the first electrode portion. , the MEMS element;
with
the first structure further includes a third partial region,
The position of at least part of the second partial area in the first direction is the position of at least part of the first partial area in the first direction and the position of at least part of the third partial area in the first direction. is between a position in and
The position of at least part of the second partial area in the second direction is the position of at least part of the first partial area in the second direction and the position of at least part of the third partial area in the second direction. is between a position in and
further comprising a second structure,
the MEMS element and the substrate portion are provided between the first structure portion and the second structure portion;
The second structure portion is connected to the third partial region,
the first structure part and the second structure part maintain a space surrounded by the first structure part and the second structure part at less than 1 atmospheric pressure;
The sensor , wherein the MEMS element and the substrate portion are within the space . further comprising a second connection member;
The first structure further includes a fourth partial region, and the position of the first partial region in the second direction is equal to the position of the fourth partial region in the second direction and the fourth partial region in the second direction. between a position in the two-part region and
The first structure part further includes a second structure electrode,
The second structure electrode is provided in the fourth partial region,
said first substrate further comprising a third portion, said first portion being between said third portion and said second portion in said second direction;
The substrate portion further includes a second substrate electrode,
the second substrate electrode is between the first structure portion and the first substrate;
the second substrate electrode includes a third electrode portion and a fourth electrode portion electrically connected to the third electrode portion;
the fourth electrode portion is provided between the second structure electrode and the third portion;
the second connection member is provided between the second structure electrode and the fourth electrode portion and electrically connects the second structure electrode to the fourth electrode portion;
2. The MEMS element of claim 1, further comprising a second element electrode, the second element electrode being between the element substrate and the third electrode portion and electrically connected to the third electrode portion. 6. The sensor according to any one of 1-5.

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