JP2021015943A - 半導体装置の製造方法および金属の積層方法 - Google Patents
半導体装置の製造方法および金属の積層方法 Download PDFInfo
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- JP2021015943A JP2021015943A JP2019131287A JP2019131287A JP2021015943A JP 2021015943 A JP2021015943 A JP 2021015943A JP 2019131287 A JP2019131287 A JP 2019131287A JP 2019131287 A JP2019131287 A JP 2019131287A JP 2021015943 A JP2021015943 A JP 2021015943A
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- layer
- metal layer
- electrode
- gold
- semiconductor device
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 107
- 239000002184 metal Substances 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000010030 laminating Methods 0.000 title claims abstract description 5
- 150000002739 metals Chemical class 0.000 title abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 52
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052737 gold Inorganic materials 0.000 claims abstract description 29
- 239000010931 gold Substances 0.000 claims abstract description 28
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 35
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 238000007772 electroless plating Methods 0.000 claims description 13
- 238000006467 substitution reaction Methods 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000004904 shortening Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 174
- 239000012535 impurity Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
Claims (8)
- 半導体部と、
前記半導体部上に選択的に設けられ、前記半導体部に電気的に接続された電極と、前記電極上に設けられた多層の金属層と、を備える半導体装置の製造方法であって、
前記電極上に第1金属層を選択的に形成し、
前記第1金属層を覆うパラジウム層を形成し、
前記パラジウム層を覆う第2金属層を形成し、
前記第2金属層を金層に置き換え、前記パラジウム層上に金層を直接形成する半導体装置の製造方法。 - 前記第1金属層および前記第2金属層は、ニッケルを含む請求項1記載の製造方法。
- 前記金層は、無電解メッキを用いて形成される請求項1または2に記載の製造方法。
- 前記第1金属層、前記パラジウム層および前記第2金属層は、無電解メッキを用いて形成される請求項3記載の製造方法。
- 下地層上にニッケルを含む金属層を形成し、
前記金属層を覆うようにパラジウムを含む中間層を形成し、
前記中間層を覆うようにニッケルを含む置換層を形成し、
前記置換層のニッケルを、無電解メッキにより金に置換し、前記中間層上に金層を形成する金属の積層方法。 - 前記金属層、前記中間層および前記置換層は、無電界メッキを用いて形成される請求項5記載の方法。
- 前記置換層を置き換えることにより、前記中間層に接した前記金層を形成する請求項5または6に記載の方法。
- 前記金属層、前記中間層および前記置換層の積層方向における前記金層の層厚は、前記金層に置換される前の前記置換層の前記積層方向における層厚よりも厚く形成される請求項7記載の方法。
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US16/803,524 US11183425B2 (en) | 2019-07-16 | 2020-02-27 | Method of manufacturing semiconductor device and method of laminating metal |
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JP2008144188A (ja) * | 2006-12-06 | 2008-06-26 | C Uyemura & Co Ltd | 無電解金めっき浴、無電解金めっき方法及び電子部品 |
JP2008270816A (ja) * | 2007-04-20 | 2008-11-06 | Samsung Electronics Co Ltd | 均一な無電解メッキ厚さを得ることができる半導体素子の製造方法 |
JP2013194291A (ja) * | 2012-03-21 | 2013-09-30 | Mitsubishi Electric Corp | 半導体装置およびその半導体装置の製造方法 |
JP2019054159A (ja) * | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
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