JP2021014599A - Manufacturing apparatus of semiconductor device, manufacturing method of semiconductor device, program, and computer storage medium - Google Patents

Abstract

To provide a manufacturing apparatus of a semiconductor device which uniformly performs electrolytic treatment to a substrate.SOLUTION: A manufacturing apparatus 1 has: a wafer holding part 10 holding a wafer W; and a terminal 25 used by an electrolytic treatment part 20 which performs plating treatment to the wafer W in order to apply voltage to the wafer W. In the manufacturing apparatus 1, the electrolytic treatment part 20 has: a base body 21 arranged opposing to the wafer holding part 10; a plating solution nozzle 40 which is provided in the base body 21, and supplies plating solution from a surface 21a of the base body 21 to the wafer W; a direct electrode 26 which is provided on the surface 21a of the base body 21, comes into contact with the plating solution supplied to the wafer W, and applies voltage between itself and the wafer W; and an indirect electrode 28 which is provided inside the base body 21, and forms an electric field in the plating solution supplied to the wafer W.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device manufacturing apparatus, a method for manufacturing a semiconductor device using the manufacturing apparatus, a program, and a computer storage medium.

In the manufacturing process of a semiconductor device, electrolytic treatment such as plating treatment and etching treatment is performed.

In order to uniformly perform the above-mentioned plating treatment, for example, the plating treatment method described in Patent Document 1 has been proposed. In this plating process, first, a wafer holding unit that holds a semiconductor wafer (hereinafter referred to as a “wafer”) and an electrolytic processing unit that performs a plating process on the wafer held by the wafer holding unit are arranged to face each other (hereinafter, referred to as “wafer”). First step). Next, the plating solution is supplied from the nozzle to the wafer held in the wafer holding portion (second step). Next, the terminal for applying a voltage to the wafer is brought into contact with the wafer, and the direct electrode provided in the electrolysis processing unit is brought into contact with the plating solution (third step). Next, by applying a voltage to the indirect electrode provided in the electrolysis treatment unit, an electric field is formed in the plating solution, and the metal ions in the plating solution are moved to the wafer side (fourth step). Then, by applying a voltage directly between the electrode and the wafer, the metal ions that have moved to the wafer side are reduced (fifth step).

In such a case, the movement of the metal ions by the indirect electrode (fourth step) and the reduction of the metal ions by the direct electrode (fifth step) are individually performed, so that the metal is in a state where the metal ions are uniformly accumulated on the wafer side. Ions can be reduced, which makes the plating process uniform.

International Publication WO2017 / 094568 Gazette

As a result of diligent studies by the present inventors, it has been found that when the seed layer formed on the wafer is exposed to the plating solution, it dissolves in the plating solution. That is, in the plating treatment method described in Patent Document 1, when the plating solution is supplied to the wafer in the second step, the seed layer is melted in the plating solution and is damaged. Then, in the subsequent fifth step, the portion where the seed layer is damaged does not function properly as an electrode, and the metal ions cannot be uniformly reduced. In particular, in recent years, with the miniaturization of semiconductor devices, the seed layer has also become thinner, so that the above-mentioned damage to the seed layer has a large effect, and there is room for improvement in uniform plating treatment.

The present invention has been made in view of the above circumstances, and an object of the present invention is to uniformly perform an electrolytic treatment on a substrate and appropriately manufacture a semiconductor device.

The present invention, which solves the above-mentioned problems, is a semiconductor device manufacturing apparatus, which comprises a substrate holding unit that holds a substrate, an electrolytic processing unit that performs electrolytic treatment on a substrate held by the substrate holding unit, and a substrate holding unit. The electrolytic processing unit has a terminal for applying a voltage to the substrate held on the substrate, and the electrolytic processing unit is provided on the substrate and is provided on the substrate and from the surface of the substrate. A processing liquid supply unit that supplies a processing liquid to the substrate, a direct electrode provided on the surface of the substrate that contacts the processing liquid supplied to the substrate and applies a voltage between the substrate, and the inside of the substrate. It is characterized in that it has an indirect electrode that forms an electric field in the processing liquid supplied to the substrate.

When the manufacturing apparatus of the present invention is used, the processing liquid is supplied from the surface of the substrate to the substrate by the processing liquid supply unit in a state where the terminals are brought into contact with the substrate and a voltage is applied to the substrate through the terminals to energize the substrate. Can be done. That is, the substrate can be energized from the moment the substrate is brought into contact with the plating solution. Then, according to the present invention, the time for the substrate to come into contact with the processing liquid can be shortened as compared with the case where the terminals are brought into contact with the substrate after the plating solution is supplied as in the conventional case (Patent Document 1). Therefore, for example, it is possible to prevent the seed layer on the substrate from being dissolved in the treatment liquid.

Further, in the manufacturing apparatus of the present invention, the treatment liquid supplied to the substrate is brought into direct contact with the electrodes. Subsequently, by applying a voltage to the indirect electrode, an electric field is formed in the treatment liquid, the ions to be treated in the treatment liquid are moved to the substrate side, and then a voltage is directly applied between the electrode and the substrate. As a result, the ions to be processed that have moved to the substrate side can be oxidized or reduced. In this way, the movement of the ion to be treated by the indirect electrode and the oxidation or reduction of the ion to be treated by the direct electrode and the substrate (hereinafter, may be simply referred to as “oxidation-reduction”) are individually performed, so that the surface of the substrate is sufficient. The redox of the ion to be treated can be performed in a state where the ion to be treated is uniformly accumulated.

As described above, it is possible to perform redox of the ions to be treated while suppressing the seed layer on the substrate from dissolving in the treatment liquid and in a state where sufficient ions to be treated are uniformly accumulated on the surface of the substrate. , The electrolytic treatment on the surface of the substrate can be uniformly performed.

In the manufacturing apparatus, the treatment liquid supply unit may be provided at least in the central portion of the substrate.

The manufacturing apparatus further includes another processing liquid supply unit that supplies a pretreatment liquid for performing a pretreatment for electrolytic treatment or a posttreatment liquid for performing a posttreatment to the substrate held on the substrate. You may.

The present invention from another viewpoint is a method for manufacturing a semiconductor device, wherein a substrate holding portion holding a substrate and an electrolytic processing portion for performing an electrolytic treatment on the substrate held by the substrate holding portion are arranged to face each other. The first step, the second step of bringing a terminal for applying a voltage to the substrate into contact with the substrate and applying a voltage to the substrate via the terminal to energize the substrate, and the second step provided on the substrate of the electrolysis processing unit. A third step of supplying the treatment liquid from the surface of the substrate to the substrate by the treatment liquid supply unit and bringing the treatment liquid into direct contact with an electrode provided on the surface of the substrate, and a third step provided inside the substrate. By applying a voltage to the indirect electrode, an electric field is formed in the treatment liquid, and a voltage is applied between the direct electrode and the substrate in the fourth step of moving the ions to be treated in the treatment liquid to the substrate side. It is characterized by having a fifth step of oxidizing or reducing the ion to be processed that has moved to the substrate side by applying the voltage.

In the manufacturing method, the treatment liquid supply unit may be provided at least in the central portion of the substrate, and in the third step, the treatment liquid may be supplied to the substrate from at least the central portion of the substrate.

In the manufacturing method, after the first step and before the second step, a pretreatment liquid is supplied to the substrate from another treatment liquid supply unit, and the pretreatment liquid is used to pretreat the electrolytic treatment. May be done.

In the manufacturing method, the second step may be performed with the pretreatment liquid remaining on the substrate.

In the manufacturing method, after the fifth step, the post-treatment liquid may be supplied to the substrate from another treatment liquid supply unit, and the post-treatment of the electrolytic treatment may be performed by the post-treatment liquid.

According to the present invention from another viewpoint, a program that operates on a computer of the manufacturing apparatus is provided so that the manufacturing method of the semiconductor device is executed by the manufacturing apparatus.

According to the present invention from another aspect, a readable computer storage medium in which the program is stored is provided.

According to the present invention, a semiconductor device can be appropriately manufactured by uniformly performing an electrolytic treatment on a substrate.

It is explanatory drawing which shows the outline of the structure of the manufacturing apparatus of the semiconductor apparatus which concerns on this embodiment. It is a top view which shows the outline of the structure of the substrate which concerns on this embodiment. It is a top view which shows the outline of the structure of the direct electrode which concerns on this embodiment. It is a flowchart which shows the main process of a plating process. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S1 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S2 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S3 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S4 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S5 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S6 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S7 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S8 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S9 of FIG. It is explanatory drawing which shows the operation of the manufacturing apparatus in a plating process, and is explanatory drawing which shows the state of performing step S10 of FIG. It is explanatory drawing which shows the outline of the structure of the manufacturing apparatus of the semiconductor apparatus which concerns on other embodiment. It is a top view which shows the outline of the structure of the direct electrode which concerns on other embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The present invention is not limited to the embodiments shown below.

FIG. 1 is an explanatory diagram showing an outline of a configuration of a semiconductor device manufacturing apparatus 1 according to the present embodiment. In the manufacturing apparatus 1, a semiconductor wafer W (hereinafter referred to as “wafer W”) as a substrate is subjected to a plating process as an electrolytic process. A seed layer (not shown) used as an electrode is formed on the surface of the wafer W. In the drawings used in the following description, the dimensions of each component do not necessarily correspond to the actual dimensions in order to prioritize the ease of understanding the technology.

The manufacturing apparatus 1 has a wafer holding portion 10 as a substrate holding portion. The wafer holding unit 10 is a spin chuck that holds and rotates the wafer W. The surface 10a of the wafer holding portion 10 is provided with, for example, a suction port (not shown) for sucking the wafer W. By suction from this suction port, the wafer W can be sucked and held on the wafer holding portion 10. In the illustrated example, the surface 10a of the wafer holding portion 10 has a diameter larger than that of the wafer W in a plan view, but is not limited to this, and may have the same or smaller diameter as the wafer W. ..

The wafer holding portion 10 is provided with a drive mechanism 11 including, for example, a motor, and the drive mechanism 11 can rotate the wafer to a predetermined speed. Further, the drive mechanism 11 is provided with an elevating drive unit (not shown) such as a cylinder, and the wafer holding unit 10 can move in the vertical direction. In the present embodiment, the drive mechanism 11 constitutes the rotation mechanism and the movement mechanism in the present invention.

Above the wafer holding unit 10, an electrolysis processing unit 20 is provided so as to face the wafer holding unit 10. The electrolytic treatment unit 20 has a substrate 21 made of an insulator. The substrate 21 has a flat plate-shaped main body portion 22 and a protruding portion 23 provided so as to project from the main body portion 22. The main body 22 has a diameter larger than that of the wafer W in a plan view.

As shown in FIG. 2, a plurality of protrusions 23 are provided in the main body 22. The plan view shape of the protrusion 23 may be a circular shape or a rectangular shape as shown in the illustrated example. A space 24 is formed in a portion where the plurality of protrusions 23 are not provided. The height of the space 24 (height of the protrusion 23) is, for example, 2 mm or less. Further, due to the formation of such a space 24, the outer surface of the substrate 21 is open. As shown in FIG. 1, in the present embodiment, the surface 21a of the substrate 21 refers to the surface of the protrusion 23. The back surface 21b of the substrate 21 refers to the surface opposite to the surface 21a.

The substrate 21 is provided with a terminal 25, a direct electrode 26, and an indirect electrode 27.

The terminal 25 is held by the substrate 21 and is provided so as to project from the surface 21a of the substrate 21. As shown in FIG. 2, a plurality of terminals 25 are provided on the outer peripheral portion of the substrate 21. Further, as shown in FIG. 1, the terminal 25 is bent and has elasticity. Then, when performing the plating process, the terminal 25 contacts the outer peripheral portion of the wafer W (seed layer) as described later, and applies a voltage to the wafer W. The shape of the terminal 25 is not limited to this embodiment, and the terminal 25 may have elasticity. Further, the terminal 25 does not necessarily have to be provided on the substrate 21, and may be provided separately from the electrolytic treatment unit 20.

The direct electrode 26 is provided on the surface 21a of the substrate 21. As shown in FIG. 3, the direct electrode 26 has a flat plate-like mesh structure, and a plurality of through holes 28 are formed. As shown in FIG. 1, the space 24 of the substrate 21 described above communicates with the plurality of through holes 28. Then, when the plating process is performed as described later, the direct electrode 26 comes into direct contact with the plating solution on the wafer W. The structure of the direct electrode 26 is not limited to the present embodiment, as long as a through hole is formed, and may be, for example, a mesh structure.

In the direct electrode 26, the diameter of the through hole 28 is preferably large from the viewpoint of allowing air between the electrolytic treatment unit 20 and the wafer W to escape to the space 24 as described later. On the other hand, in order to make the plating process efficient, the surface area of the direct electrode 26 should be large, so that the diameter of the through hole 28 should be small. Therefore, the diameter of the through holes 28 is determined to optimize them.

The indirect electrode 27 is provided inside the substrate 21. That is, the indirect electrode 27 is not exposed to the outside.

A DC power supply 30 is connected to the terminal 25, the direct electrode 26, and the indirect electrode 27. The terminal 25 is connected to the negative electrode side of the DC power supply 30. The direct electrode 26 and the indirect electrode 27 are each connected to the positive electrode side of the DC power supply 30.

The substrate 21 is further provided with a plating solution nozzle 40 as a processing solution supply unit that supplies a plating solution as a processing solution onto the wafer W. The plating solution nozzle 40 is provided, for example, in the central portion of the substrate 21 so as to penetrate the main body portion 22, and is open in the space 24. Further, the plating solution nozzle 40 communicates with the plating solution supply source 42 for storing the plating solution via the supply pipe 41. Then, the plating solution is supplied from the plating solution supply source 42 to the plating solution nozzle 40, and the plating solution discharged from the plating solution nozzle 40 sequentially passes through the space 24 of the substrate 21 and the through hole 28 of the direct electrode 26. It is supplied to the wafer W.

As the plating solution, for example, a mixed solution in which copper sulfate and sulfuric acid are dissolved is used, and the plating solution contains copper ions. Further, although the plating solution nozzle 40 is used as the processing liquid supply unit in the present embodiment, various other means can be used as the mechanism for supplying the plating solution. Further, the number and arrangement of the plating solution nozzles 40 are not limited to the present embodiment, and a plurality of plating solution nozzles 40 may be provided. However, from the viewpoint of uniformly supplying the plating solution to the wafer W, it is preferable that the plating solution nozzle 40 is provided at least in the central portion of the substrate 21.

On the back surface 21b side of the substrate 21, a moving mechanism 50 for moving the substrate 21 in the vertical direction is provided. The moving mechanism 50 is provided with an elevating drive unit (not shown) such as a cylinder. The movement mechanism 50 may have various configurations as long as it raises and lowers the substrate 21.

Between the wafer holding unit 10 and the electrolytic processing unit 20, a cleaning liquid nozzle 60 as another processing liquid supply unit that supplies a cleaning liquid as a pretreatment liquid or a posttreatment liquid is provided on the wafer W. The cleaning liquid nozzle 60 is movable in the horizontal direction and the vertical direction by the moving mechanism 61, and is configured to be movable back and forth with respect to the wafer holding portion 10. Further, the cleaning liquid nozzle 60 communicates with a cleaning liquid supply source (not shown) for storing the cleaning liquid, and the cleaning liquid is supplied to the cleaning liquid nozzle 60 from the cleaning liquid supply source.

As the cleaning liquid, for example, IPA or pure water (DIW) is used. In the present embodiment, after cleaning the surface of the wafer W with a cleaning liquid which is IPA, for example, the cleaning liquid is replaced with DIW. Further, in the present embodiment, the cleaning liquid nozzle 60 is used as another processing liquid supply unit, but various other means can be used as the mechanism for supplying the cleaning liquid.

A cup (not shown) that catches and collects the liquid scattered or dropped from the wafer W may be provided around the wafer holding portion 10.

The manufacturing apparatus 1 described above is provided with a control unit (not shown). The control unit is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of the wafer W in the manufacturing apparatus 1. The program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical desk (MO), or memory card. It may be the one installed in the control unit from the storage medium.

Next, the plating process in the manufacturing method using the manufacturing apparatus 1 configured as described above will be described. FIG. 4 is a flowchart showing an example of the main steps of the plating process.

First, the wafer holding unit 10 and the electrolytic processing unit 20 are arranged to face each other, and the wafer W is adsorbed and held by the wafer holding unit 10. The distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the substrate 21 of the electrolytic processing portion 20 is about 100 mm.

Next, a pretreatment for the plating treatment, and a cleaning treatment in the present embodiment are performed. As shown in FIG. 5, the cleaning liquid nozzle 60 is moved to the upper part of the center of the wafer W held by the wafer holding portion 10 by the moving mechanism 61. After that, the cleaning liquid P1 which is an IPA is supplied from the cleaning liquid nozzle 60 to the central portion of the wafer W while rotating the wafer W by the drive mechanism 11. The supplied cleaning liquid P1 is diffused over the entire surface of the wafer W by centrifugal force, and the surface of the wafer W is cleaned (step S1 in FIG. 4).

After that, the liquid supplied from the cleaning liquid nozzle 60 is switched from the cleaning liquid P1 to the pure water D1, the pure water D1 is supplied to the central portion of the wafer W, and the cleaning liquid P1 on the wafer W is replaced with the pure water D1. After that, as shown in FIG. 6, the supply of pure water D1 from the cleaning liquid nozzle 60 is stopped, and the wafer W is further rotated to shake off and remove the pure water D1 (step S2 in FIG. 4). However, the pure water D1 is not completely removed and remains on the wafer W in the form of a thin film.

After that, as shown in FIG. 7, the electrolysis processing unit 20 is lowered by the moving mechanism 50. Then, the terminal 25 is brought into contact with the wafer W, and a voltage is applied to the wafer W via the terminal 25 to energize the wafer W (step S3 in FIG. 4). At this time, the distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the substrate 21 of the electrolytic treatment portion 20 is about 1 mm to several tens of mm. Since the terminal 25 has elasticity, the height of the terminal 25 can be adjusted to adjust the distance between the surfaces 10a and 21a.

In step S3, a thin film of pure water D1 is formed on the wafer W. Here, when the pure water D1 is completely removed in step S2 and the surface of the wafer W is exposed to the atmosphere, an oxide film may be formed on the seed layer of the wafer W. In this respect, in the present embodiment, since the thin film of pure water D1 remains on the wafer W, it is possible to suppress the formation of an oxide film on the seed layer.

Then, as shown in FIG. 8, the plating solution M is supplied from the plating solution nozzle 40. The plating solution M is sequentially passed through the space 24 of the substrate 21 and the through holes 28 of the direct electrode 26, and is supplied to the wafer W (step S4 in FIG. 4). Then, as shown in FIG. 9, the plating solution M is filled between the electrolytic treatment unit 20 and the wafer W, and the electrode 26 is directly brought into contact with the plating solution M (step S5 in FIG. 4).

These steps S4 to S5 are performed in a state where the wafer W is energized via the terminal 25, that is, the wafer W is energized from the moment when the wafer W is brought into contact with the plating solution M. Then, in the present embodiment, the time for the wafer W to come into contact with the plating solution M can be shortened as compared with the case where the terminals are brought into contact with the wafer after the plating solution is supplied as in the conventional case (Patent Document 1). it can. Then, it is possible to prevent the seed layer of the wafer W from being dissolved in the plating solution.

The amount of current that energizes the wafer W via the terminal 25 is suppressed to such a small extent that the copper plating does not precipitate in steps S4 to S5.

Further, when the plating solution M is supplied onto the wafer W in step S4, air may remain between the electrolytic treatment unit 20 and the wafer W. Even in such a case, air can escape to the space 24 of the substrate 21 directly through the through hole 28 of the electrode 26.

Further, bubbles may be mixed in the plating solution M supplied from the plating solution nozzle 40 due to various factors while the solution is being sent from the plating solution supply source 42. When the plating solution M directly passes through the electrode 26, the bubbles in the plating solution M are collected in the through hole 28 and collected in the space 24. Further, even if the bubbles in the plating solution M flow between the electrolytic treatment unit 20 and the wafer W, the bubbles can escape to the space 24 through the through holes 28.

In the plating solution M filled between the electrolytic treatment unit 20 and the wafer W in this way, air bubbles can be suppressed. Then, since it is possible to prevent accidental bubbles from directly adhering to the surface of the electrode 26 or the surface of the wafer W, stable plating can be performed.

Further, even if the air escapes to the space 24, since the outer surface of the base 21 is open, the air in the space 24 is discharged to the outside through the opening of the outer surface of the base 21. Further, since the main body 22 of the substrate 21 has a diameter larger than that of the wafer W, the air in the space 24 can be reliably discharged to the outside. Then, the internal pressure of the space 24 can be kept constant, and the unnecessary pressure applied to the wafer W can be suppressed. In this way, the plating process can be appropriately performed.

After that, an electric field (electrostatic field) is formed by applying a DC voltage with the indirect electrode 27 as an anode and the wafer W as a cathode. Then, as shown in FIG. 10, negatively charged particles Sulfate ions S gather on the surface (indirect electrode 27 and direct electrode 26) side of the electrolytic treatment unit 20, and positively charged particles copper on the surface side of the wafer W. Ion C moves (step S6 in FIG. 4).

In this step S6, in order to prevent the direct electrode 26 from becoming a cathode, the direct electrode 26 is not directly connected to the ground and is electrically floated. In such a case, since the charge exchange is suppressed on both the surfaces of the electrolytic treatment unit 20 and the wafer W, the charged particles attracted by the electrostatic field are directly arranged on the surface of the electrode 26. Then, the copper ions C are uniformly arranged on the surface of the wafer W as well. Further, since the charge exchange of copper ions C is not performed on the surface of the wafer W, the electric field when applying a voltage between the indirect electrode 27 and the wafer W can be increased. Then, the movement of the copper ion C can be accelerated by this high electric field, and the plating rate of the plating process can be improved. Further, by arbitrarily controlling this electric field, the copper ions C arranged on the surface of the wafer W are also arbitrarily controlled. As described above, since the generation of air bubbles is prevented on the surface of the wafer W, the copper ions C arranged on the surface of the wafer W are stable.

After that, when sufficient copper ions C move to the wafer W side and accumulate, a voltage is applied directly using the electrode 26 as an anode and the wafer W as a cathode to pass a current directly between the electrode 26 and the wafer W. At this time, the voltage application by the indirect electrode 27 may be continued or stopped. Then, when a current flows directly between the electrode 26 and the wafer W, charge exchange of copper ions C uniformly arranged on the surface of the wafer W is performed as shown in FIG. 11, and the copper ions C are reduced. , Copper plating 70 is deposited on the surface of the wafer W (step S7 in FIG. 4). At this time, even if there are hydrogen ions in the plating solution M, the copper ions C have a lower ionization tendency than the hydrogen ions. Therefore, only copper ion C is reduced and hydrogen is not generated. With the reduction of copper ion C, sulfate ion S is directly oxidized by the electrode 26.

In this step S7, sufficient copper ions C are accumulated on the surface of the wafer W and reduced in a uniformly arranged state, so that the copper plating 70 can be uniformly deposited on the surface of the wafer W. As a result, the density of crystals in the copper plating 70 is increased, and a high quality copper plating 70 can be formed. Further, since the reduction is performed in a state where the copper ions C are uniformly arranged on the surface of the wafer W, the copper plating 70 can be produced uniformly and with high quality.

After that, as shown in FIG. 12, the electrolysis processing unit 20 is raised by the moving mechanism 50. At this time, the air existing in the space 24 is also released. Then, the wafer W is rotated by the drive mechanism 11 to shake off and remove the plating solution M (step S8 in FIG. 4).

In step S8, when the electrolysis treatment unit 20 is raised, air flows in from the opening on the outer surface of the substrate 21 and flows into the interface between the electrolysis treatment unit 20 and the plating solution M. With this air, the surface tension of the plating solution M acting on the electrolytic treatment unit 20 can be reduced. Therefore, the force required to separate the electrolytic treatment unit 20 from the plating solution M can be reduced, and the separation can be easily performed.

Next, a post-treatment of the plating treatment and a cleaning treatment in the present embodiment are performed. As shown in FIG. 13, the cleaning liquid nozzle 60 is moved by the moving mechanism 61 to the upper part of the central portion of the wafer W held by the wafer holding portion 10. After that, the cleaning liquid P2, which is an IPA, is supplied from the cleaning liquid nozzle 60 to the central portion of the wafer W while rotating the wafer W by the drive mechanism 11. The supplied cleaning liquid P2 is diffused over the entire surface of the wafer W by centrifugal force, and the surface of the wafer W is cleaned (step S9 in FIG. 4).

After that, the liquid supplied from the cleaning liquid nozzle 60 is switched from the cleaning liquid P2 to the pure water D2, the pure water D2 is supplied to the central portion of the wafer W, and the cleaning liquid P2 on the wafer W is replaced with the pure water D2. After that, as shown in FIG. 14, the supply of pure water D2 from the cleaning liquid nozzle 60 is stopped, and the wafer W is further rotated to shake off and remove the pure water D2 (step S10 in FIG. 4).

In this way, a series of plating processes in the manufacturing apparatus 1 is completed. Depending on the target thickness of the copper plating 70, the plating solution M in steps S4 to S5 is supplied and filled, the copper ion C is moved by the indirect electrode 27 in step S6, and the copper ion by the direct electrode 26 and the wafer W in step S7. The reduction of C is repeated. At this time, steps S4 to S8 may be repeated, or steps S4 to S9 may be repeated.

According to the above embodiment, the terminal 25 is brought into contact with the wafer W in step S3, a voltage is applied to the substrate through the terminal 25 to energize the substrate, and then the plating solution nozzle 40 is plated on the wafer W in step S4. Liquid M is supplied. Therefore, as described above, the time for the wafer W to come into contact with the plating solution M can be shortened, and the seed layer of the wafer W can be suppressed from being dissolved in the plating solution.

Further, since the space 24 is formed on the surface 21a of the substrate 21 and the direct electrode 26 has a mesh structure in which a plurality of through holes 28 are formed, electrolysis is performed when the plating solution M is supplied onto the wafer W in step S4. Even if air remains between the processing unit 20 and the wafer W, the air can escape to the space 24. Further, even when bubbles are present in the plating solution M itself supplied from the plating solution nozzle 40, the bubbles can escape to the space 24. Therefore, bubbles in the plating solution M can be suppressed.

Further, since the movement of the copper ion C by the indirect electrode 27 in step S6 and the reduction of the copper ion C by the direct electrode 26 and the wafer W in step S7 are individually performed, sufficient copper ion C is uniformly on the surface of the wafer W. Copper ion C can be reduced in a state of being accumulated in.

As described above, in a state where the seed layer of the wafer W is suppressed from being dissolved in the plating solution M, bubbles in the plating solution M are suppressed, and sufficient copper ions C are uniformly accumulated on the surface of the wafer W. Since the copper ion C can be reduced, the plating process can be performed uniformly.

Next, another embodiment of the manufacturing apparatus 1 will be described. FIG. 15 is an explanatory diagram showing an outline of the configuration of the manufacturing apparatus 1 according to another embodiment. The manufacturing apparatus 1 shown in FIG. 15 has a direct electrode 100 instead of the direct electrode 26 of the manufacturing apparatus 1 shown in FIG. The other configuration of the manufacturing apparatus 1 shown in FIG. 15 is the same as the other configuration of the manufacturing apparatus 1 shown in FIG.

As shown in FIGS. 15 and 16, the direct electrode 100 is divided into a plurality, for example, seven. Hereinafter, the seven divided direct electrodes 100 will be referred to as divided electrodes 101 to 107. A plurality of through holes 110 are formed in each of the divided electrodes 101 to 107. The number of direct divisions of the electrode 100 and the method of division are not limited to the present embodiment, and can be arbitrarily set.

The dividing electrodes 101 to 107 are connected to a common DC power supply 30, and each of the dividing electrodes 101 to 107 is individually provided with a switch (not shown) for switching on / off of the connection with the DC power supply 30. By switching on and off with the switch in this way, the divided electrodes 101 to 107 can individually control the application of voltage. The voltage control method is not limited to this embodiment. For example, the dividing electrodes 101 to 107 may be connected to individual DC power supplies (not shown). Alternatively, a DC voltage may be applied in a pulse shape to the divided electrodes 101 to 107 and controlled by the application time of the pulse and the width of the pulse.

According to the present embodiment, by individually controlling the application of the voltage by the divided electrodes 101 to 107, it is possible to individually control the plating process of the wafer W at the portion facing the divided electrodes 101 to 107. That is, for example, when the application of the voltage by the split electrode 101 is stopped, the precipitation of the copper plating 70 can be suppressed at the portion of the wafer W facing the split electrode 101. On the other hand, when a voltage is applied by the split electrode 101, the copper plating 70 can be positively deposited on the portion of the wafer W facing the split electrode 101.

Here, for example, in the wafer W, the copper plating 70 tends to grow thicker in the portion near the contact point of the terminals 25, while the copper plating 70 becomes thinner in the portion far away. In particular, when the seed layer on the wafer W becomes thinner with the miniaturization of semiconductor devices in recent years, such a tendency of precipitation of the copper plating 70 appears remarkably. Therefore, it is possible to make the film thickness of the copper plating 70 uniform by individually controlling the application of the voltage by the dividing electrodes 101 to 107 according to the growth potential of the copper plating 70.

In the manufacturing apparatus 1 of the above embodiment, the space 24 is formed on the surface 21a of the substrate 21, and the direct electrodes 26 and 100 have a mesh structure. However, these substrates 21 and the direct electrodes 26 and 100 have a mesh structure. The present invention can be applied even if the surface is flat. That is, in the substrate 21, the space 24 may be omitted and the surface 21a may be flat. Further, in the direct electrodes 26 and 100, the through holes 28 and 110 may be omitted.

In such a case, the effect of suppressing air bubbles in the plating solution M is reduced, but according to the present invention, the time for the wafer W to come into contact with the plating solution M can be shortened as described above, and the seed of the wafer W can be shortened. It is possible to prevent the layer from dissolving in the plating solution. Therefore, the plating process can be performed uniformly.

Further, in the manufacturing apparatus 1 of the above embodiment, the cleaning liquid nozzle 60 is provided separately from the plating liquid nozzle 40, but the supply of the cleaning liquid P and the pure water D, which are the pretreatment liquid or the posttreatment liquid, is plated. The liquid nozzle 40 may be used. However, for example, when the wafer W is cleaned (pretreated) in steps S2 to S3, when the cleaning liquid P1 and the pure water D1 are supplied from the plating solution nozzle 40, the cleaning process is completed and the cleaning liquid P1 and the pure water D1 are supplied. There is a risk of liquid dripping on the wafer W even when the above is stopped. Similarly, when the wafer W is cleaned (post-processed) in steps S9 to S10, there is a risk of liquid dripping. Therefore, it is preferable to supply the cleaning liquid P and pure water D using the cleaning liquid nozzle 60.

Further, in the above embodiment, the electrolysis processing unit 20 is lowered by the moving mechanism 50 to bring the terminal 25 into contact with the wafer W, but in the manufacturing apparatus 1, the wafer holding unit 10 is raised by the driving mechanism 11. May be. Alternatively, both the electrolysis processing unit 20 and the wafer holding unit 10 may be moved. Further, the electrolysis processing unit 20 and the wafer holding unit 10 may be arranged in reverse, and the electrolysis processing unit 20 may be arranged below the wafer holding unit 10.

Further, in the above-described embodiment, the case of forming copper plating as the plating treatment has been described, but the present invention can also be applied to the case of plating other metals. For example, when the ionization tendency of the metal ion to be plated is lower than the ionization tendency of the hydrogen ion, only the metal ion can be reduced in step S7, and hydrogen is not generated. On the other hand, for example, even when the ionization tendency of the metal ion to be plated is higher than the ionization tendency of the hydrogen ion, the potentials of the direct electrodes 26 and 100 in step S7 and the PH of the plating solution M can be adjusted. Only the metal ion can be reduced. For example, when the plating solution M is made alkaline, hydrogen is not generated even if the metal ion has a high ionization tendency. In any case, the generation of hydrogen can be suppressed and the plating treatment can be performed.

Further, in the above embodiments, the case where the plating treatment is performed as the electrolytic treatment has been described, but the present invention can be applied to various electrolytic treatments such as an etching treatment.

Further, in the above embodiment, the case where the copper ion C is reduced on the surface side of the wafer W has been described, but the present invention can also be applied to the case where the ion to be treated is oxidized on the surface side of the wafer W. In such a case, the ion to be treated is an anion, and the same electrolytic treatment may be performed with the anode and cathode reversed in the above embodiment. Also in this embodiment, the same effect as that of the above-described embodiment can be enjoyed, although there is a difference between oxidation and reduction of the ion to be treated.

Although the embodiments of the present invention have been described above, the present invention is not limited to such examples. It is clear that a person skilled in the art can come up with various modifications or modifications within the scope of the technical idea described in the claims, and of course, the technical scope of the present invention also includes them. It is understood that it belongs to.

1 Manufacturing equipment 10 Wafer holding part 11 Drive mechanism 20 Electrolysis processing part 21 Base 22 Main body 23 Protrusion 24 Space 25 Terminal 26 Direct electrode 27 Indirect electrode 28 Through hole 40 Plating liquid nozzle 50 Moving mechanism 60 Cleaning liquid nozzle 70 Copper plating 100 Direct Electrode 101-107 Divided electrode 110 Through hole C Copper ion D (D1, D2) Pure water M Plating solution P (P1, P2) Cleaning solution S Sulfate ion W Wafer (semiconductor wafer)

Claims (10)

It is a semiconductor device manufacturing device.
The board holding part that holds the board and
An electrolytic treatment unit that performs electrolytic treatment on the substrate held by the substrate holding unit,
It has a terminal for applying a voltage to the substrate held by the substrate holding portion.
The electrolytic treatment unit is
A substrate arranged to face the substrate holding portion and
A treatment liquid supply unit provided on the substrate and supplying the treatment liquid from the surface of the substrate to the substrate,
A direct electrode provided on the surface of the substrate, which comes into contact with the treatment liquid supplied to the substrate and applies a voltage to and from the substrate,
An apparatus for manufacturing a semiconductor device, which comprises an indirect electrode provided inside the substrate and forming an electric field in the processing liquid supplied to the substrate. The semiconductor device manufacturing apparatus according to claim 1, wherein the treatment liquid supply unit is provided at least in the central portion of the substrate. The substrate held on the substrate is further provided with another treatment liquid supply unit for supplying a pretreatment liquid for performing the pretreatment of the electrolytic treatment or a posttreatment liquid for performing the posttreatment. Item 2. The semiconductor device manufacturing apparatus according to item 1 or 2. It is a manufacturing method of semiconductor devices.
A first step of arranging a substrate holding portion that holds a substrate and an electrolytic processing portion that performs an electrolytic treatment on the substrate held by the substrate holding portion so as to face each other.
The second step of bringing a terminal for applying a voltage to the substrate into contact with the substrate and applying a voltage to the substrate through the terminal to energize the substrate.
A third step of supplying a treatment liquid from the surface of the substrate to the substrate by a treatment liquid supply unit provided on the substrate of the electrolysis treatment unit and bringing the treatment liquid into direct contact with an electrode provided on the surface of the substrate. When,
A fourth step of forming an electric field in the treatment liquid by applying a voltage to the indirect electrode provided inside the substrate and moving the ions to be treated in the treatment liquid to the substrate side.
A method for manufacturing a semiconductor device, which comprises a fifth step of oxidizing or reducing the ions to be processed that have moved to the substrate side by applying a voltage between the direct electrode and the substrate. The treatment liquid supply unit is provided at least in the central portion of the substrate.
The method for manufacturing a semiconductor device according to claim 4, wherein in the third step, the treatment liquid is supplied to the substrate from at least the central portion of the substrate. After the first step and before the second step, the pretreatment liquid is supplied to the substrate from another treatment liquid supply unit, and the pretreatment of the electrolytic treatment is performed by the pretreatment liquid. The method for manufacturing a semiconductor device according to claim 4 or 5. The method for manufacturing a semiconductor device according to claim 6, wherein the second step is performed in a state where the pretreatment liquid remains on the substrate. Any of claims 4 to 7, wherein after the fifth step, the post-treatment liquid is supplied to the substrate from another treatment liquid supply unit, and the post-treatment of the electrolytic treatment is performed by the post-treatment liquid. The method for manufacturing a semiconductor device according to item 1. A program that operates on a computer of a control unit that controls a manufacturing device so that the manufacturing method of the semiconductor device according to any one of claims 4 to 8 is executed by the manufacturing device. A readable computer storage medium containing the program according to claim 9.