JP2000073197A - Substrate plating apparatus - Google Patents

Substrate plating apparatus

Info

Publication number
JP2000073197A
JP2000073197A JP10244761A JP24476198A JP2000073197A JP 2000073197 A JP2000073197 A JP 2000073197A JP 10244761 A JP10244761 A JP 10244761A JP 24476198 A JP24476198 A JP 24476198A JP 2000073197 A JP2000073197 A JP 2000073197A
Authority
JP
Japan
Prior art keywords
substrate
electrode
processing surface
base member
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10244761A
Other languages
Japanese (ja)
Inventor
Yutaka Tsujimura
豊 辻村
Yusuke Muraoka
祐介 村岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP10244761A priority Critical patent/JP2000073197A/en
Publication of JP2000073197A publication Critical patent/JP2000073197A/en
Pending legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To well execute an electrolytic plating treatment. SOLUTION: When a substrate W is placed on a hollow tube 10 by directing the treating surface Ws of this substrate W upward in the shrunk state of the hollow tube 10 by reducing the pressure of the hollow part in the hollow tube 10 disposed atop a base member 3, a first electrode 5 is moved from a retreat position to a contact position. When the hollow tube 10 is expanded by pressurizing the hollow part in the hollow tube 10, the substrate W placed on the hollow tube 10 is moved in a direction parting from the front surface of the base member 3 in accordance with the expansion of the hollow tube 10 and the first electrode 5 existing in the contact position above the treating surface Ws of the substrate W and the treating surface Ws of the substrate W are brought into contact. When the expansion of the hollow tube 10 is further increased, the treating surface Ws of the substrate W presses the first electrode 5 and the sure contact of the treating surface Ws of the substrate W with the first electrode 5 is attained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウエハや液
晶表示器用のガラス基板などの基板に対してメッキ処理
を施す基板メッキ装置に係り、特には、基板の処理面に
電解メッキでメッキ層を形成する技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate plating apparatus for plating a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display, and more particularly to a plating apparatus for electrolytically plating a treated surface of a substrate. Related to forming technology.

【0002】[0002]

【従来の技術】従来のこの種の基板メッキ装置として、
例えば、特公平7−107199号(特開平4−288
97号)公報に示すようなものがある。
2. Description of the Related Art As a conventional substrate plating apparatus of this kind,
For example, Japanese Patent Publication No. Hei 7-107199 (Japanese Unexamined Patent Publication No. 4-288)
No. 97).

【0003】この公報に開示された装置は、図11に示
すように、開閉弁100を有する電解メッキ液供給管1
01や電解メッキ液リターン管102などを天井に備え
た上部カップ103と、基板Wを載置して昇降可能な下
部カップ104とを備えている。上部カップ103は、
その内側に上部メッシュ電極105と、基板Wに当接す
るコンタクトピン電極106とを有し、これら電極10
5、106間に給電できるように構成されている。ま
た、下部カップ104には中央にスピンチャック107
が通過する孔108や、開閉弁109を有するドレイン
管110が設けられている。さらに、下部カップ104
の下方には洗浄液ドレイン管111を有するドレインカ
バー112が設けられ、上部カップ103の側方には洗
浄液ノズル113も設けられている。
As shown in FIG. 11, the apparatus disclosed in this publication has an electrolytic plating solution supply pipe 1 having an on-off valve 100.
An upper cup 103 having a ceiling 01, an electrolytic plating solution return pipe 102, and the like on the ceiling, and a lower cup 104 on which the substrate W can be placed and moved up and down. The upper cup 103
An upper mesh electrode 105 and a contact pin electrode 106 abutting on the substrate W are provided on the inner side thereof.
It is configured so that power can be supplied between the terminals 5 and 106. The lower cup 104 has a spin chuck 107 at the center.
And a drain pipe 110 having an on-off valve 109 are provided. Further, the lower cup 104
A drain cover 112 having a cleaning liquid drain pipe 111 is provided below the cleaning cup, and a cleaning liquid nozzle 113 is also provided beside the upper cup 103.

【0004】この装置による電解メッキ処理は、以下の
ように行われる。まず、孔108を塞ぐように下部カッ
プ104に基板Wが載置された状態で下部カップ104
を上昇させて、下部カップ104の底壁114に上部カ
ップ103の下端を密着シールSするとともに、コンタ
クトピン電極106を基板Wの処理面Wsに当接Tさせ
る。次に、電解メッキ液供給管101から電解メッキ液
を供給するとともに、電極105、106間に給電して
基板Wの処理面Wsに電解メッキ処理を行うものであ
る。
[0004] The electroplating process by this apparatus is performed as follows. First, the lower cup 104 is placed in a state where the substrate W is placed on the lower cup 104 so as to close the hole 108.
Is raised, the lower end of the upper cup 103 is tightly sealed to the bottom wall 114 of the lower cup 104, and the contact pin electrode 106 is brought into contact T with the processing surface Ws of the substrate W. Next, an electrolytic plating solution is supplied from the electrolytic plating solution supply pipe 101, and power is supplied between the electrodes 105 and 106 to perform an electrolytic plating process on the processing surface Ws of the substrate W.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。電解メッキ処理中、基板Wを回転させることで、
基板Wの処理面Wsへの電解メッキ液の供給が均一に行
えたり、電流密度のバラツキを緩和したりすることがで
き、その結果、処理面Wsに均一なメッキ層を形成する
ことがきる。しかしながら、従来装置の構成では、上部
カップ103に設けられたコンタクトピン電極106を
基板Wの処理面Wsに当接して電解メッキを行っている
関係で、電解メッキ処理中、基板Wを回転させることが
できない。そのため、この従来装置は、基板Wを保持し
て回転させるスピンチャック107を有しているにもか
かわらず、上述した理由で、電解メッキ処理中、基板W
を回転させることができないという構造上の問題を有し
ている。
However, the prior art having such a structure has the following problems. By rotating the substrate W during the electrolytic plating process,
The electrolytic plating solution can be uniformly supplied to the processing surface Ws of the substrate W, and the variation of the current density can be reduced. As a result, a uniform plating layer can be formed on the processing surface Ws. However, in the configuration of the conventional apparatus, the substrate W is rotated during the electrolytic plating because the contact pin electrode 106 provided on the upper cup 103 is in contact with the processing surface Ws of the substrate W to perform the electrolytic plating. Can not. Therefore, despite the fact that this conventional apparatus has the spin chuck 107 for holding and rotating the substrate W, the substrate W
Has a structural problem that it cannot be rotated.

【0006】また、従来装置の構成では、下部カップ1
04の底壁114と上部カップ103の下端との密着シ
ールSと、コンタクトピン電極106と基板Wの処理面
Wsとの当接Tとを同時に行う構成となっている。その
ため、シールSの不良、あるいは、電極の接触Tの不良
のいずれか一方の不良が起き易いという問題がある。特
に、下部カップ104の底壁114と上部カップ103
の下端との密着シールSを重視するあまり、コンタクト
ピン電極106と基板Wの処理面Wsとの当接Tが不十
分で電極の接触Tの不良が生じた場合には、処理面Ws
に形成するメッキ層が不均一になったり、処理面Wsに
メッキ層が形成できないなどの不都合を招くことにな
る。
Further, in the configuration of the conventional apparatus, the lower cup 1
The configuration is such that the close contact seal S between the bottom wall 114 of the substrate 04 and the lower end of the upper cup 103 and the contact T between the contact pin electrode 106 and the processing surface Ws of the substrate W are simultaneously performed. Therefore, there is a problem that any one of the defect of the seal S and the defect of the contact T of the electrode is likely to occur. In particular, the bottom wall 114 of the lower cup 104 and the upper cup 103
If the contact T between the contact pin electrode 106 and the processing surface Ws of the substrate W is insufficient due to too much emphasis on the seal S with the lower end of the substrate W, and the contact T of the electrode is defective, the processing surface Ws
This leads to inconveniences such as a non-uniform plating layer to be formed on the substrate, and an inability to form a plating layer on the processing surface Ws.

【0007】本発明は、このような事情に鑑みてなされ
たものであって、上記不都合を解消して良好な電解メッ
キ処理を行うことができる基板メッキ装置を提供するこ
とを目的とする。
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate plating apparatus which can solve the above-mentioned inconvenience and can perform favorable electrolytic plating.

【0008】[0008]

【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、請求項1に記載の発明は、基板に対してメッキ処理
を施す基板メッキ装置であって、ベース部材と、前記ベ
ース部材を回転させる回転手段と、前記ベース部材の上
面に設けられ、膨張/収縮によって載置した基板の高さ
位置を変更する膨縮部材と、前記膨縮部材を膨張収縮さ
せる膨張収縮手段と、基板の処理面を上方に向けて、収
縮された膨縮部材に載置された基板の処理面の上方の接
触位置と処理面の上方から外れた退避位置との間で移動
可能に、前記ベース部材に設けられた第1電極と、膨張
された膨縮部材に載置され、接触位置で処理面と前記第
1電極とが接触された基板の処理面に電解メッキ液を供
給する電解メッキ液供給手段と、膨張された膨縮部材に
載置され、接触位置で処理面と前記第1電極とが接触さ
れた基板の処理面に対向して配置される第2電極と、前
記第2電極から前記第1電極へ向けて電流が流れるよう
に給電する給電手段と、を備えたことを特徴とするもの
である。
The present invention has the following configuration in order to achieve the above object. In other words, the invention according to claim 1 is a substrate plating apparatus for performing plating on a substrate, wherein a base member, rotating means for rotating the base member, and an upper surface of the base member are provided. An expansion / contraction member for changing the height position of a substrate placed by contraction / expansion, expansion / contraction means for expanding / contracting the expansion / contraction member, and mounting the substrate on the contracted expansion / contraction member with the processing surface of the substrate facing upward. The first electrode provided on the base member and the expanded and contracted member mounted on the base member so as to be movable between a contact position above the processing surface of the placed substrate and a retracted position deviated from above the processing surface. An electrolytic plating solution supply means for supplying an electrolytic plating solution to the processing surface of the substrate in contact with the processing surface and the first electrode at the contact position; Of the substrate in contact with the processing surface and the first electrode A second electrode disposed opposite to the bedding plane, is characterized in that and a feeding means for feeding such current flows toward the second electrode to the first electrode.

【0009】請求項2に記載の発明は、上記請求項1に
記載の基板メッキ装置において、前記膨縮部材を平面視
でリング状に形成された中空チューブで構成し、前記膨
張収縮手段は、前記中空チューブ内の中空部に対する加
圧/減圧により、前記中空チューブを膨張/収縮させる
ことを特徴とするものである。
According to a second aspect of the present invention, in the substrate plating apparatus according to the first aspect, the expansion / contraction member is constituted by a hollow tube formed in a ring shape in plan view, and the expansion / contraction means includes: The hollow tube is expanded / contracted by pressurizing / depressurizing a hollow portion in the hollow tube.

【0010】請求項3に記載の発明は、基板に対してメ
ッキ処理を施す基板メッキ装置であって、ベース部材
と、前記ベース部材を回転させる回転手段と、前記ベー
ス部材の上面に設けられ、変形とその復元とによって載
置した基板の高さ位置を変更する変形部材と、基板の処
理面を上方に向けて、前記変形部材に載置された基板を
前記ベース部材の上面に近接させる方向に前記変形部材
を変形させる変形付与手段と、前記変形付与手段で変形
された変形部材に載置された基板の処理面の上方の接触
位置と処理面の上方から外れた退避位置との間で移動可
能に、前記ベース部材に設けられた第1電極と、前記変
形部材に載置され、接触位置で処理面と前記第1電極と
が接触された基板の処理面に電解メッキ液を供給する電
解メッキ液供給手段と、前記変形部材に載置され、接触
位置で処理面と前記第1電極とが接触された基板の処理
面に対向して配置される第2電極と、前記第2電極から
前記第1電極へ向けて電流が流れるように給電する給電
手段と、を備えたことを特徴とするものである。
According to a third aspect of the present invention, there is provided a substrate plating apparatus for performing a plating process on a substrate, comprising: a base member; rotating means for rotating the base member; and an upper surface of the base member. A deforming member that changes the height position of the substrate placed by the deformation and its restoration, and a direction in which the processing surface of the substrate faces upward and the substrate placed on the deforming member approaches the upper surface of the base member. Between the deformation applying means for deforming the deformable member and the contact position above the processing surface of the substrate placed on the deformation member deformed by the deformation applying means and the retracted position deviated from above the processing surface. An electrolytic plating solution is movably supplied to the first electrode provided on the base member and the processing surface of the substrate placed on the deformable member and contacting the processing surface and the first electrode at the contact position. Electrolytic plating solution supply means A second electrode placed on the deformable member and arranged at a contact position so as to face a processing surface of the substrate where the processing surface and the first electrode are in contact with each other; and from the second electrode to the first electrode. Power supply means for supplying power so that a current flows toward the power supply.

【0011】請求項4に記載の発明は、上記請求項3に
記載の基板メッキ装置において、前記変形部材を平面視
でリング状に形成されたVパッキンで構成し、前記変形
付与手段は、前記Vパッキンに載置された基板の下面
と、前記Vパッキンの内周面と、前記ベース部材の上面
とで囲まれる空間を減圧することで、基板を前記ベース
部材の上面に近接させる方向に前記Vパッキンを変形さ
せることを特徴とするものである。
According to a fourth aspect of the present invention, in the substrate plating apparatus according to the third aspect, the deformable member is formed of a V-shaped packing formed in a ring shape in a plan view, and the deformation imparting means includes: By lowering the space surrounded by the lower surface of the substrate mounted on the V packing, the inner peripheral surface of the V packing, and the upper surface of the base member, the substrate is moved in a direction to approach the upper surface of the base member. It is characterized in that the V packing is deformed.

【0012】請求項5に記載の発明は、上記請求項3ま
たは4に記載の基板メッキ装置において、前記変形部材
に載置された基板に、前記ベース部材の上面から離間さ
せる方向に作用する力を付与する離間力付与手段をさら
に備えたことを特徴とするものである。
According to a fifth aspect of the present invention, in the substrate plating apparatus according to the third or fourth aspect, a force acting on the substrate mounted on the deformable member in a direction to separate the substrate from the upper surface of the base member. And a separating force applying means for applying the force.

【0013】[0013]

【作用】請求項1に記載の発明の作用は次のとおりであ
る。ベース部材の上面に設けられた膨縮部材が、膨張収
縮手段によって収縮された状態で、基板の処理面を上方
に向けて、収縮された膨縮部材に基板が載置されると、
第1電極が退避位置から接触位置に移動される。そし
て、膨張収縮手段によって膨縮部材が膨張されると、膨
縮部材の膨張に伴って膨縮部材に載置された基板がベー
ス部材の上面から離間する方向に移動され、基板の処理
面の上方の接触位置に位置している第1電極と膨縮部材
に載置された基板の処理面とが接触される。膨縮部材の
膨張をさらに大きくすると、基板の処理面が第1電極を
押圧して基板の処理面と第1電極との接触が確実にな
る。
The operation of the first aspect of the invention is as follows. When the expansion / contraction member provided on the upper surface of the base member is contracted by the expansion / contraction means, the processing surface of the substrate faces upward, and when the substrate is placed on the contracted expansion / contraction member,
The first electrode is moved from the retracted position to the contact position. When the expansion / contraction member is expanded by the expansion / contraction means, the substrate mounted on the expansion / contraction member is moved in a direction away from the upper surface of the base member with the expansion of the expansion / contraction member, and the processing surface of the substrate is removed. The first electrode located at the upper contact position is brought into contact with the processing surface of the substrate placed on the expansion / contraction member. When the expansion of the expansion member is further increased, the processing surface of the substrate presses the first electrode, and the contact between the processing surface of the substrate and the first electrode is ensured.

【0014】膨縮部材と第1電極とはベース部材に設け
られている。従って、回転手段によってベース部材を回
転させると、基板の処理面と第1電極とを接触させた状
態で、ベース部材とともに基板や膨縮部材、第1電極を
回転させることができる。
The expansion / contraction member and the first electrode are provided on the base member. Therefore, when the base member is rotated by the rotating means, the substrate, the expansion / contraction member, and the first electrode can be rotated together with the base member while the processing surface of the substrate is in contact with the first electrode.

【0015】電解メッキ処理は、ベース部材とともに基
板を回転させながら、電解メッキ液供給手段から基板の
処理面に電解メッキ液を供給するとともに、給電手段に
よって基板の処理面に対向して配置される第2電極から
第1電極に電流が流れるように給電することで行われ
る。
In the electrolytic plating process, the electrolytic plating solution is supplied from the electrolytic plating solution supply means to the processing surface of the substrate while the substrate is rotated together with the base member, and the electrolytic plating solution is arranged to face the processing surface of the substrate by the power supply means. This is performed by supplying power so that a current flows from the second electrode to the first electrode.

【0016】電解メッキ処理を終えると、膨張収縮手段
によって膨縮部材が収縮され、これに伴って、膨縮部材
に載置された基板がベース部材の上面に近接する方向に
移動され、基板の処理面と第1電極とが離間されて非接
触になる。基板の処理面と第1電極とが非接触となる
と、第1電極が接触位置から退避位置に移動される。こ
れによって、第1電極の干渉を受けずに、膨縮部材に載
置された処理済の基板を取り出すことができる。
When the electrolytic plating process is completed, the expansion / contraction member is contracted by the expansion / contraction means, and accordingly, the substrate placed on the expansion / contraction member is moved in a direction approaching the upper surface of the base member. The processing surface and the first electrode are separated from each other and become non-contact. When the processing surface of the substrate and the first electrode come out of contact, the first electrode is moved from the contact position to the retracted position. Thereby, the processed substrate placed on the expansion / contraction member can be taken out without receiving the interference of the first electrode.

【0017】請求項2に記載の発明によれば、膨張収縮
手段は、平面視でリング状に形成された膨縮部材である
中空チューブ内の中空部に対する加圧/減圧により、中
空チューブを膨張/収縮させる。
According to the second aspect of the present invention, the expansion / contraction means expands the hollow tube by pressurizing / depressurizing the hollow portion inside the hollow tube which is a ring-shaped expansion / contraction member in plan view. / Shrink.

【0018】請求項3に記載の発明の作用は次のとおり
である。ベース部材の上面に設けられた変形部材が、変
形付与手段により、載置された基板をベース部材の上面
に近接させる方向に変形された状態で、基板の処理面を
上方に向けてその変形部材に基板が載置されると、第1
電極が退避位置から接触位置に移動される。そして、変
形付与手段による変形部材の変形が解除されと、変形部
材が復元されることに伴って変形部材に載置された基板
がベース部材の上面から離間する方向に移動され、基板
の処理面の上方の接触位置に位置している第1電極と変
形部材に載置された基板の処理面とが接触される。変形
部材の復元力を十分に大きく設計することで、基板の処
理面を第1電極に押圧させることができ、基板の処理面
と第1電極との接触を確実にすることができる。
The operation of the invention described in claim 3 is as follows. In a state where the deformable member provided on the upper surface of the base member is deformed by the deformation applying means in a direction in which the placed substrate is brought closer to the upper surface of the base member, the deformable member is turned upward with the processing surface of the substrate facing upward. When the substrate is placed on the
The electrode is moved from the retracted position to the contact position. When the deformation of the deformation member by the deformation applying means is released, the substrate placed on the deformation member is moved in a direction away from the upper surface of the base member as the deformation member is restored, and the processing surface of the substrate is removed. The first electrode located at the contact position above the substrate contacts the processing surface of the substrate placed on the deformable member. By designing the restoring force of the deformable member to be sufficiently large, the processing surface of the substrate can be pressed against the first electrode, and the contact between the processing surface of the substrate and the first electrode can be ensured.

【0019】変形部材と第1電極とはベース部材に設け
られているので、回転手段によってベース部材を回転さ
せると、基板の処理面と第1電極とを接触させた状態
で、ベース部材、基板、変形部材及び第1電極が回転さ
せる。
Since the deformable member and the first electrode are provided on the base member, when the base member is rotated by the rotating means, the base member and the substrate are kept in contact with the processing surface of the substrate and the first electrode. Then, the deformable member and the first electrode are rotated.

【0020】電解メッキ処理は、ベース部材とともに基
板を回転させながら、電解メッキ液供給手段から基板の
処理面に電解メッキ液を供給するとともに、給電手段に
よって基板の処理面に対向して配置される第2電極から
第1電極に電流が流れるように給電することで行われ
る。
In the electrolytic plating process, the electrolytic plating solution is supplied from the electrolytic plating solution supply means to the processing surface of the substrate while the substrate is rotated together with the base member, and the electrolytic plating solution is arranged to face the processing surface of the substrate by the power supply means. This is performed by supplying power so that a current flows from the second electrode to the first electrode.

【0021】電解メッキ処理を終えると、変形付与手段
によって変形部材が変形され、これに伴って、変形部材
に載置された基板がベース部材の上面に近接する方向に
移動され、基板の処理面と第1電極とが離間されて非接
触になる。基板の処理面と第1電極とが非接触となる
と、第1電極が接触位置から退避位置に移動される。こ
れによって、第1電極の干渉を受けずに、変形部材に載
置された処理済の基板を取り出すことができる。
When the electrolytic plating process is completed, the deforming member is deformed by the deforming means, and the substrate mounted on the deforming member is moved in a direction approaching the upper surface of the base member. And the first electrode are separated from each other and become non-contact. When the processing surface of the substrate and the first electrode come out of contact, the first electrode is moved from the contact position to the retracted position. Thus, the processed substrate placed on the deformable member can be taken out without receiving the interference of the first electrode.

【0022】請求項4に記載の発明によれば、変形付与
手段は、平面視でリング状に形成された変形部材である
Vパッキンに載置された基板の下面と、Vパッキンの内
周面と、ベース部材の上面とで囲まれる空間を減圧する
ことで、基板をベース部材の上面に近接させる方向にV
パッキンを変形させる。
According to the fourth aspect of the present invention, the deformation applying means includes a lower surface of the substrate mounted on the V-packing, which is a deformation member formed in a ring shape in plan view, and an inner peripheral surface of the V-packing. And the space surrounded by the upper surface of the base member is reduced in pressure, so that V
Deform packing.

【0023】請求項5に記載の発明によれば、基板の処
理面と第1電極とを接触させた状態で、離間力付与手段
によって変形部材に載置された基板に、ベース部材の上
面から離間させる方向に作用する力を付与することで、
基板の処理面の第1電極への押圧を強化することがで
き、基板の処理面と第1電極との接触がより確実にな
る。
According to the fifth aspect of the present invention, in a state where the processing surface of the substrate and the first electrode are in contact with each other, the substrate placed on the deformable member by the separating force applying means is placed on the substrate from the upper surface of the base member. By applying a force acting in the direction to separate,
Pressing of the processing surface of the substrate to the first electrode can be strengthened, and contact between the processing surface of the substrate and the first electrode becomes more reliable.

【0024】[0024]

【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図1は本発明の第1実施例に係る
基板メッキ装置の全体構成を示す縦断面図であり、図2
はベース部材の平面図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view showing the overall configuration of a substrate plating apparatus according to a first embodiment of the present invention.
FIG. 4 is a plan view of a base member.

【0025】回転手段としての電動モーター1に連動連
結されて鉛直方向の軸芯J回りで回転可能な回転軸2の
上端部に、ベース部材3が一体回転可能に連結されてい
る。回転軸2及びベース部材3は絶縁性の材料で形成さ
れている。
A base member 3 is integrally rotatably connected to an upper end of a rotating shaft 2 which is linked to an electric motor 1 as a rotating means and is rotatable around a vertical axis J. The rotating shaft 2 and the base member 3 are formed of an insulating material.

【0026】ベース部材1の上面の外周部には、複数個
(図では4個)の第1電極部材4が鉛直方向の軸芯P回
りに回動可能に設けられている。各第1電極部材4は上
部に庇部4aが形成され、庇部4aの下面側に第1電極
5が設けられている。各電極部材4を軸芯P回りで回転
させることで、第1電極5は基板Wの処理面Wsの上方
の図の実線(図2では点線)で示す接触位置と、基板W
の処理面Wsの上方から外れた図の二点鎖線で示す退避
位置との間で移動可能に構成されている。
A plurality of (four in the figure) first electrode members 4 are provided on the outer peripheral portion of the upper surface of the base member 1 so as to be rotatable around a vertical axis P. Each first electrode member 4 has an eaves portion 4a formed on an upper portion, and a first electrode 5 is provided on a lower surface side of the eaves portion 4a. By rotating each electrode member 4 about the axis P, the first electrode 5 is brought into contact with the contact position indicated by the solid line (dotted line in FIG. 2) above the processing surface Ws of the substrate W and the substrate W
Is configured to be movable between a retreat position indicated by a two-dot chain line in FIG.

【0027】各第1電極部材4の軸芯P回りの回動は、
例えば、周知のリンク機構とリンク駆動機構(いずれも
図示せず)によって同期して行われる。
The rotation of each first electrode member 4 around the axis P is
For example, the synchronization is performed by a well-known link mechanism and a link drive mechanism (neither is shown).

【0028】各第1電極5は、導線6を介して回転軸2
に設けられたリング状の端子部7と電気的に接続されて
いる。端子部7は、電源ユニット8に接続された給電ブ
ラシ9からブラシ給電されるようになっている。
Each first electrode 5 is connected to a rotating shaft 2 via a conductive wire 6.
Are electrically connected to a ring-shaped terminal portion 7 provided at the terminal. The terminal unit 7 is configured to be supplied with power from a power supply brush 9 connected to a power supply unit 8.

【0029】また、ベース部材3の上面には、各第1電
極部材4の内側に、平面視でリング(ドーナツ)状に形
成された膨縮部材としての中空チューブ10が設けられ
ている。
On the upper surface of the base member 3, a hollow tube 10 is provided inside each of the first electrode members 4 as an expanding / contracting member formed in a ring (donut) shape in plan view.

【0030】中空チューブ10内の中空部10aは、配
管11を介して回転軸2及びベース部材3に設けられた
吸引加圧路12と連通接続されている。吸引加圧路12
は、周知の回転シール機構13を介して、回転軸2の回
転中も配管14と連通されるようになっている。配管1
4は、開閉弁15、16を介して真空吸引源17と気体
供給源18とに接続されている。開閉弁15を開、開閉
弁16を閉にすることで、中空チューブ10内の中空部
10aを減圧して中空チューブ10を収縮させることが
できる。また、中空チューブ10が収縮させた状態で、
開閉弁15を閉、開閉弁16を開にすることで、減圧さ
れている中空チューブ10内の中空部10aを加圧し
て、収縮されていた中空チューブ10を膨張させること
ができる。真空吸引源17と気体供給源18とは、請求
項1に記載の発明における膨張収縮手段を構成する。
The hollow portion 10 a in the hollow tube 10 is connected through a pipe 11 to a suction pressure path 12 provided in the rotating shaft 2 and the base member 3. Suction pressurization path 12
Is connected to the pipe 14 even during the rotation of the rotary shaft 2 via the well-known rotary seal mechanism 13. Piping 1
4 is connected to a vacuum suction source 17 and a gas supply source 18 via on-off valves 15 and 16. By opening the on-off valve 15 and closing the on-off valve 16, the hollow portion 10 a in the hollow tube 10 can be depressurized to contract the hollow tube 10. Further, in a state where the hollow tube 10 is contracted,
By closing the on-off valve 15 and opening the on-off valve 16, the hollow portion 10 a in the hollow tube 10 that has been depressurized can be pressurized and the contracted hollow tube 10 can be expanded. The vacuum suction source 17 and the gas supply source 18 constitute the expansion / contraction means in the first aspect of the present invention.

【0031】ベース部材3の周囲には回収部材20が配
置されている。基板Wに供給され、基板Wの外周部から
周囲に飛散された、処理に使用された後の電解メッキ液
や洗浄液は、回収部材20で受け止められて回収され
る。
A collection member 20 is arranged around the base member 3. The electrolytic plating solution and the cleaning liquid after being used for the processing and supplied to the substrate W and scattered from the outer peripheral portion of the substrate W to the periphery are received by the recovery member 20 and recovered.

【0032】回収部材20には、開閉弁21が介装され
た電解メッキ液回収管22と、開閉弁23が介装された
洗浄液回収管24とが連通されている。開閉弁21、2
3の開閉制御により、回収部材20で回収した、処理に
使用した後の電解メッキ液と洗浄液とを分離回収するこ
とができる。回収された洗浄液は廃棄される。また、回
収された電解メッキ液は廃棄してもよいし、電解メッキ
液供給系25に戻して再利用してもよい。
The recovery member 20 is connected to an electrolytic plating solution recovery pipe 22 provided with an on-off valve 21 and a cleaning liquid recovery pipe 24 provided with an on-off valve 23. On-off valve 21, 2
By controlling the opening and closing of 3, the electrolytic plating solution and the cleaning solution collected by the collection member 20 and used after the process can be separated and collected. The collected washing liquid is discarded. The recovered electrolytic plating solution may be discarded, or may be returned to the electrolytic plating solution supply system 25 for reuse.

【0033】回収部材20は、ボールネジなどの周知の
1軸方向駆動機構で構成される図示しない昇降機構によ
って昇降可能に構成されている。
The recovery member 20 is configured to be able to move up and down by a lift mechanism (not shown) composed of a well-known uniaxial drive mechanism such as a ball screw.

【0034】ベース部材3の上方には、基板Wの処理面
Wsに供給された液を満たすための処理空間を形成する
処理空間形成機構26が設けられている。
Above the base member 3, there is provided a processing space forming mechanism 26 for forming a processing space for filling the liquid supplied to the processing surface Ws of the substrate W.

【0035】この処理空間形成機構26は、ボールネジ
などの周知の1軸方向駆動機構で構成される図示しない
昇降機構によって昇降可能な支持アーム(図示せず)に
懸垂支持された支軸27の下端部に、基板Wと略同じ大
きさの板状部材28が支持され、基板Wの処理面Wsに
対して板状部材28を接離可能に構成している。
The processing space forming mechanism 26 has a lower end of a support shaft 27 suspended by a support arm (not shown) which can be moved up and down by a lifting mechanism (not shown) constituted by a well-known uniaxial driving mechanism such as a ball screw. A plate-like member 28 having substantially the same size as the substrate W is supported by the portion, and the plate-like member 28 is configured to be able to contact and separate from the processing surface Ws of the substrate W.

【0036】支軸27及び板状部材28の内部には液供
給路29が設けられている。液供給路29には、開閉弁
30、31の開閉制御によって電解メッキ液供給系2
5、洗浄液供給系32からの電解メッキ液と洗浄液とが
配管33を介して選択的に切り換え供給される。そし
て、板状部材28側の液供給路29の先端部の液の供給
口34から、基板Wの処理面Wsの中央部(回転中心付
近)に各液が選択的に供給される。なお、電解メッキ液
供給系25、配管33、液供給路29が、本発明におけ
る電解メッキ液供給手段を構成する。
A liquid supply passage 29 is provided inside the support shaft 27 and the plate-like member 28. The electrolytic plating solution supply system 2 is provided in the solution supply path 29 by opening and closing control of the on-off valves 30 and 31.
5. The electrolytic plating liquid and the cleaning liquid from the cleaning liquid supply system 32 are selectively switched and supplied via the pipe 33. Then, the respective liquids are selectively supplied to the central portion (near the center of rotation) of the processing surface Ws of the substrate W from the liquid supply port 34 at the tip of the liquid supply path 29 on the plate member 28 side. The electrolytic plating solution supply system 25, the pipe 33, and the liquid supply path 29 constitute an electrolytic plating solution supply unit in the present invention.

【0037】支軸27や板状部材28は絶縁性の材料で
形成されている。板状部材28の下面には、基板Wの処
理面Wsと略同じ面積を有する板状やメッシュ状の第2
電極35が設けられている。第2電極35は、導線36
を介して電源ユニット8と電気的に接続されている。
The support shaft 27 and the plate-like member 28 are formed of an insulating material. On the lower surface of the plate-like member 28, a plate-like or mesh-like second surface having substantially the same area as the processing surface Ws of the substrate W is provided.
An electrode 35 is provided. The second electrode 35 includes a conductor 36
And is electrically connected to the power supply unit 8 via the.

【0038】電源ユニット8は、給電ブラシ9が負極
側、導線36が正極側となるように給電する。従って、
電解メッキを行う際には、基板Wの処理面Wsは、給電
ブラシ9、端子部7、導線6、第1電極5を介して負極
となり、第2電極35は、導線36を介して正極とな
る。電源ユニット8、給電ブラシ9、端子部7、導線
6、36が、本発明における給電手段を構成する。
The power supply unit 8 supplies power so that the power supply brush 9 is on the negative electrode side and the conductive wire 36 is on the positive electrode side. Therefore,
When performing electrolytic plating, the processing surface Ws of the substrate W becomes a negative electrode through the power supply brush 9, the terminal portion 7, the conductive wire 6, and the first electrode 5, and the second electrode 35 becomes a positive electrode through the conductive wire 36. Become. The power supply unit 8, the power supply brush 9, the terminal portion 7, and the conductive wires 6, 36 constitute a power supply unit in the present invention.

【0039】上記構成を有する第1実施例装置は、図示
しないコントローラーに制御されて以下のように動作す
る。これを図1及び図3を参照して説明する。
The apparatus of the first embodiment having the above configuration operates as follows under the control of a controller (not shown). This will be described with reference to FIGS.

【0040】初期状態は、図3(a)に示す状態であ
る。すなわち、中空チューブ10は収縮された状態で開
閉弁15、16は閉になっており、開閉弁21、23、
30、31も閉になっている。また、板状部材28はベ
ース部材3の上面から離間されて上方に待機されてい
る。さらに、回収部材20の上方にベース部材3が配置
されるように回収部材20は下降されている。また、第
1電極5は退避位置に位置されている。
The initial state is the state shown in FIG. That is, the open / close valves 15 and 16 are closed in a state where the hollow tube 10 is contracted, and the open / close valves 21 and 23,
30 and 31 are also closed. The plate-like member 28 is separated from the upper surface of the base member 3 and is waiting above. Further, the collecting member 20 is lowered so that the base member 3 is disposed above the collecting member 20. Further, the first electrode 5 is located at the retracted position.

【0041】上記初期状態で、図示しない基板搬送機構
によって処理面Wsを上方に向けて基板Wがベース部材
3の上面の中空チューブ10に載置される(図3
(b))。このとき、板状部材28は上方に待機され、
回収部材20は下降され、第1電極5は退避位置に位置
しているので、基板搬送機構は、板状部材28や回収部
材20、第1電極5(第1電極部材4の庇部4a)と干
渉せずに基板Wを中空チューブ10に載置することがで
きる。
In the initial state, the substrate W is placed on the hollow tube 10 on the upper surface of the base member 3 with the processing surface Ws facing upward by a substrate transport mechanism (not shown) (FIG. 3).
(B)). At this time, the plate member 28 waits upward,
Since the recovery member 20 is lowered and the first electrode 5 is located at the retracted position, the substrate transport mechanism performs the operation of the plate-like member 28, the recovery member 20, and the first electrode 5 (the eaves portion 4a of the first electrode member 4). The substrate W can be placed on the hollow tube 10 without interfering with the above.

【0042】基板Wが中空チューブ10に載置される
と、各第1電極部材4を軸芯P回りで回転させて、各第
1電極5を退避位置から接触位置に移動させる(図3
(c))。なお、各第1電極5を退避位置から接触位置
に移動させる際に、基板Wによって第1電極5の移動が
妨げられたり、第1電極5が基板Wの処理面Wsをこす
たったりしないようにするために、収縮された中空チュ
ーブ10に載置された基板Wの処理面Wsの高さ位置
を、図3に示すように、第1電極5の下面よりも低く設
定している。すなわち、そのような高さ位置で基板Wを
載置し得る程度に、中空チューブ10は収縮させてい
る。
When the substrate W is mounted on the hollow tube 10, each first electrode member 4 is rotated around the axis P to move each first electrode 5 from the retracted position to the contact position (FIG. 3).
(C)). When each first electrode 5 is moved from the retracted position to the contact position, the movement of the first electrode 5 is not hindered by the substrate W, and the first electrode 5 does not rub the processing surface Ws of the substrate W. In order to achieve this, the height position of the processing surface Ws of the substrate W placed on the contracted hollow tube 10 is set lower than the lower surface of the first electrode 5 as shown in FIG. That is, the hollow tube 10 is contracted to such an extent that the substrate W can be placed at such a height position.

【0043】各第1電極5を接触位置に位置させると、
開閉弁16を開にして、中空チューブ10内の中空部1
0aを加圧して中空チューブ10を膨張させる(図3
(d))。これにより、中空チューブ10に載置された
基板Wがベース部材3の上面から離間する方向に移動さ
れ、接触位置に位置している第1電極5と基板Wの処理
面Wsとが接触される。中空チューブ10の膨張をさら
に大きくすると、基板Wの処理面Wsが第1電極5を押
圧して基板Wの処理面Wsと第1電極5との接触を確実
にすることができるとともに、基板Wは中空チューブ1
0と各第1電極5とに挟まれて保持される。
When each first electrode 5 is located at the contact position,
The on-off valve 16 is opened and the hollow portion 1 in the hollow tube 10 is opened.
0a is expanded to expand the hollow tube 10 (FIG. 3).
(D)). As a result, the substrate W placed on the hollow tube 10 is moved in a direction away from the upper surface of the base member 3, and the first electrode 5 located at the contact position is brought into contact with the processing surface Ws of the substrate W. . When the expansion of the hollow tube 10 is further increased, the processing surface Ws of the substrate W presses the first electrode 5 to ensure the contact between the processing surface Ws of the substrate W and the first electrode 5, and the substrate W Is the hollow tube 1
0 and each of the first electrodes 5.

【0044】基板Wの処理面Wsが第1電極5を押圧す
る程度にまで中空チューブ10を膨張させると、開閉弁
16を閉にする。
When the hollow tube 10 is expanded to such an extent that the processing surface Ws of the substrate W presses the first electrode 5, the on-off valve 16 is closed.

【0045】この状態で、板状部材28を下降させて第
2電極35を基板Wの処理面Wsに近接配置させるとと
もに、回収部材20を上昇させて、基板Wの周囲に回収
部材20を配置させ、図1に示す状態として、以下の各
処理を行う。
In this state, the plate-like member 28 is lowered to dispose the second electrode 35 close to the processing surface Ws of the substrate W, and the collecting member 20 is raised to dispose the collecting member 20 around the substrate W. Then, the following processes are performed in the state shown in FIG.

【0046】なお、このときの板状部材28の下面と基
板Wの処理面Wsとの間隔は、液を少なくして処理可能
であることや、液の液密が保持しやすいことなどの理由
から狭く設定することが好ましく、その具体的な値は、
例えば、0.5〜5mm程度である。
The distance between the lower surface of the plate member 28 and the processing surface Ws of the substrate W at this time depends on the reason that the processing can be performed with a reduced amount of liquid and that the liquid tightness of the liquid can be easily maintained. Is preferably set to be narrower, and the specific value is
For example, it is about 0.5 to 5 mm.

【0047】まず、開閉弁23を開にし、電動モーター
1を、例えば、数十rpm程度の低速度で駆動して、ベ
ース部材3とともに、基板W、中空チューブ10及び第
1電極5(第1電極部材4)を軸芯J回りで回転させ
る。そして、開閉弁31を開にして供給口34から基板
Wの処理面Wsに洗浄液を供給して前洗浄処理を行う。
First, the on-off valve 23 is opened, and the electric motor 1 is driven at a low speed of, for example, about several tens of rpm, so that the substrate W, the hollow tube 10 and the first electrode 5 (first The electrode member 4) is rotated around the axis J. Then, the opening / closing valve 31 is opened and a cleaning liquid is supplied from the supply port 34 to the processing surface Ws of the substrate W to perform a pre-cleaning process.

【0048】所定の洗浄時間が経過すると、開閉弁2
3、31を閉にし、開閉弁21を開にする。そして、基
板Wを回転させている状態で、開閉弁30を開にして供
給口34から基板Wの処理面Wsに電解メッキ液を供給
するとともに、第1電極5と第2電極35との間に給電
して、基板Wの処理面Wsに電解メッキで所定の厚さの
メッキ層を形成する。
When a predetermined cleaning time has elapsed, the on-off valve 2
3, 31 are closed and the on-off valve 21 is opened. Then, while the substrate W is being rotated, the opening / closing valve 30 is opened to supply the electrolytic plating solution from the supply port 34 to the processing surface Ws of the substrate W, and the gap between the first electrode 5 and the second electrode 35. And a plating layer having a predetermined thickness is formed on the processing surface Ws of the substrate W by electrolytic plating.

【0049】このように基板Wを回転させながら電解メ
ッキを行うことで、供給口34から供給された電解メッ
キ液は、遠心力によって中心部から周縁部に流動し、流
動ムラなく基板Wの処理面Wsに電解メッキ液をひろげ
ることができる。また、本実施例では、第2電極35
を、基板Wの処理面Wsに対向配置させ、処理面Wsと
略同じ大きさ(面積)を有するように構成しているの
で、第2電極35から基板Wの処理面Wsまでの距離を
面内において略均一にすることができ、電流密度を基板
Wの処理面Wsの全体にわたって略均一にすることがで
きるが、さらに、基板Wを回転させることで、処理面W
s内に電流密度のバラツキがあっても、その影響を抑制
することができる。従って、基板Wの処理面Wsに所定
の厚さのメッキ層を均一に形成することができる。
By performing the electrolytic plating while rotating the substrate W in this manner, the electrolytic plating solution supplied from the supply port 34 flows from the central portion to the peripheral portion by centrifugal force, and the processing of the substrate W is performed without flow unevenness. The electrolytic plating solution can be spread on the surface Ws. In the present embodiment, the second electrode 35
Are arranged so as to face the processing surface Ws of the substrate W and have substantially the same size (area) as the processing surface Ws, so that the distance from the second electrode 35 to the processing surface Ws of the substrate W is reduced. And the current density can be made substantially uniform over the entire processing surface Ws of the substrate W. However, by further rotating the substrate W, the processing surface W
Even if there is a variation in the current density within s, the effect can be suppressed. Therefore, a plating layer having a predetermined thickness can be uniformly formed on the processing surface Ws of the substrate W.

【0050】所定の電解メッキ処理時間(おおよそ5、
6分程度)が経過すると、開閉弁21、30を閉にし、
開閉弁23を開にする。そして、基板Wを回転させてい
る状態で、開閉弁31を開にして供給口34から基板W
の処理面Wsに洗浄液を供給して後洗浄処理を行う。
A predetermined electrolytic plating time (approximately 5,
After about 6 minutes), the on-off valves 21 and 30 are closed,
The on-off valve 23 is opened. Then, while the substrate W is being rotated, the on-off valve 31 is opened and the substrate W is supplied from the supply port 34.
The cleaning liquid is supplied to the processing surface Ws to perform the post-cleaning processing.

【0051】所定の洗浄時間が経過すると、開閉弁31
を閉にして洗浄液の供給を停止し、電動モーター1を高
速回転させて、基板Wに残留している洗浄液を振り切っ
て基板Wを乾燥する乾燥処理を行う。
When a predetermined cleaning time has elapsed, the on-off valve 31
Is closed, the supply of the cleaning liquid is stopped, and the electric motor 1 is rotated at a high speed so as to shake off the cleaning liquid remaining on the substrate W to dry the substrate W.

【0052】所定の乾燥時間が経過すると、電動モータ
ー1の回転を停止させ、開閉弁23を閉にする。さら
に、板状部材28を上昇させて上方に待機させるととも
に、回収部材20の上方にベース部材3が配置されるよ
うに回収部材20を下降させる。
When a predetermined drying time has elapsed, the rotation of the electric motor 1 is stopped, and the on-off valve 23 is closed. Further, the plate-like member 28 is raised to wait above, and the collecting member 20 is lowered so that the base member 3 is disposed above the collecting member 20.

【0053】この状態で、開閉弁15を開にして中空チ
ューブ10内の中空部10aを減圧して中空チューブ1
0を、上記初期状態と同じ程度に収縮させて開閉弁15
を閉にする(図3(c))。
In this state, the on-off valve 15 is opened and the pressure in the hollow portion 10a in the hollow tube 10 is reduced.
0 is contracted to the same extent as the initial state,
Is closed (FIG. 3C).

【0054】そして、各第1電極部材4を軸芯P回りで
回転させて、各第1電極5を接触位置から退避位置に移
動させる(図3(b))。なお、上述したように、収縮
された中空チューブ10に載置された基板Wの処理面W
sの高さ位置を第1電極5の下面よりも低く設定してい
るので、各第1電極5を接触位置から退避位置に移動さ
せる際に、第1電極5が基板Wの処理面Wsをこすたっ
たりすることはない。
Then, each first electrode member 4 is rotated around the axis P to move each first electrode 5 from the contact position to the retracted position (FIG. 3B). As described above, the processing surface W of the substrate W mounted on the contracted hollow tube 10 is used.
Since the height position of s is set lower than the lower surface of the first electrode 5, the first electrode 5 moves the processing surface Ws of the substrate W when moving each first electrode 5 from the contact position to the retreat position. No rubbing.

【0055】各第1電極5が退避位置に移動されると、
図示しない基板搬送機構によって処理済の基板Wが取り
出されて処理室から搬出され、上述した初期状態に戻る
(図3(a))。
When each first electrode 5 is moved to the retracted position,
The processed substrate W is taken out from the processing chamber by the substrate transport mechanism (not shown), and returns to the above-described initial state (FIG. 3A).

【0056】以上のように、上記第1実施例装置によれ
ば、第1電極5と基板Wの処理面Wsとの接触/非接触
を行う中空チューブ10と、第1電極5(第1電極部材
4)とをベース部材3に設けたので、ベース部材3を回
転させることで、基板Wの処理面Wsと第1電極5とを
接触させた状態で、ベース部材3、基板W、中空チュー
ブ10及び第1電極5(第1電極部材4)を回転させる
ことができ、第1電極Wに接触された基板Wを回転させ
ながら電解メッキ処理を行うことができる。従って、基
板Wの処理面Wsに均一なメッキ層を形成することがき
る。また、中空チューブ10の膨張によって基板Wの処
理面Wsを第1電極5に押圧して基板Wの処理面Wsと
第1電極5とを接触させることができ、基板Wの処理面
Wsと第1電極5との接触を確実に行うことができ、電
極の接触不良を確実に防止することができる。
As described above, according to the apparatus of the first embodiment, the hollow tube 10 for making contact / non-contact between the first electrode 5 and the processing surface Ws of the substrate W, and the first electrode 5 (the first electrode 5) Since the member 4) is provided on the base member 3, the base member 3, the substrate W, the hollow tube, and the processing surface Ws of the substrate W are brought into contact with the first electrode 5 by rotating the base member 3. 10 and the first electrode 5 (the first electrode member 4) can be rotated, and the electrolytic plating process can be performed while rotating the substrate W in contact with the first electrode W. Therefore, a uniform plating layer can be formed on the processing surface Ws of the substrate W. In addition, the processing surface Ws of the substrate W can be brought into contact with the first electrode 5 by pressing the processing surface Ws of the substrate W against the first electrode 5 by the expansion of the hollow tube 10. Contact with one electrode 5 can be reliably performed, and poor contact of the electrode can be reliably prevented.

【0057】次に、本発明の第2実施例装置の構成を図
4を参照して説明する。図4(a)は本発明の第2実施
例装置の要部の構成を示す縦断面図であり、図4(b)
はベース部材の平面図である。
Next, the structure of the second embodiment of the present invention will be described with reference to FIG. FIG. 4A is a longitudinal sectional view showing a configuration of a main part of the second embodiment of the present invention, and FIG.
FIG. 4 is a plan view of a base member.

【0058】上記第1実施例では、平面視でリング状に
形成された1つの中空チューブ10で膨縮部材を構成し
たが、この第2実施例では、接触位置に位置された各第
1電極5の下方にそれぞれ、独立して膨張収縮させる膨
縮部材40を設けている。各膨縮部材40は、それぞれ
配管41を介して吸引加圧路12と連通接続され、開閉
弁15を開、開閉弁16を閉にすることで、各膨縮部材
40内の中空部40aを減圧して各膨縮部材40を収縮
させることができる。また、各膨縮部材40が収縮させ
た状態で、開閉弁15を閉、開閉弁16を開にすること
で、減圧されている各膨縮部材40内の中空部40aを
加圧して、収縮されていた各膨縮部材40を膨張させる
ことができる。
In the first embodiment, the expansion / contraction member is constituted by one hollow tube 10 formed in a ring shape in plan view. In the second embodiment, each of the first electrodes positioned at the contact position is formed. The expansion and contraction members 40 for independently expanding and contracting are provided below each of the members 5. Each of the expansion / contraction members 40 is connected to the suction / pressurizing path 12 via a pipe 41, and opens and closes the on-off valve 15 and closes the on-off valve 16, thereby opening the hollow portion 40a in each of the expansion / contraction members 40. By reducing the pressure, each expansion / contraction member 40 can be contracted. In addition, by closing the on-off valve 15 and opening the on-off valve 16 in a state where each of the expansion and contraction members 40 is contracted, the hollow portion 40a in each of the decompression and expansion members 40 is pressurized and contracted. Each expanding / contracting member 40 that has been set can be expanded.

【0059】その他の構成及び動作は第1実施例と同様
であるので、詳述は省略する。なお、図4では、球形の
膨縮部材40を示しているが、各膨縮部材40を球形以
外の形状で構成してもよい。
The other constructions and operations are the same as those of the first embodiment, and a detailed description thereof will be omitted. Although FIG. 4 shows the spherical expansion / contraction members 40, each expansion / contraction member 40 may be formed in a shape other than a spherical shape.

【0060】このように、複数個の膨縮部材40を備え
て構成しても基板Wを回転させながら電解メッキ処理を
行うことができ、かつ、基板Wの処理面Wsと第1電極
5との接触を確実に行うことができる。
As described above, even when a plurality of expansion / contraction members 40 are provided, the electrolytic plating can be performed while rotating the substrate W, and the processing surface Ws of the substrate W and the first electrode 5 Can be reliably performed.

【0061】次に、本発明の第3実施例装置の構成を図
5、図6を参照して説明する。図5は本発明の第3実施
例装置の全体構成を示す縦断面図であり、図6はベース
部材の平面図である。
Next, the configuration of a device according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a longitudinal sectional view showing the entire configuration of the third embodiment of the present invention, and FIG. 6 is a plan view of a base member.

【0062】この第3実施例装置は、上記第1実施例装
置の中空チューブ10に代えて、平面視でリング状に形
成された変形部材としてのVパッキン50をベース部材
3の上面に設けている。また、配管11を省略して、開
閉弁15、16の開閉制御により、Vパッキン50に載
置された基板Wの下面と、Vパッキン50の内周面と、
ベース部材3の上面とで囲まれる空間51を減圧して基
板Wをベース部材3の上面に近接させる方向にVパッキ
ン50を変形させたり、空間51を加圧してVパッキン
50に載置された基板Wに、ベース部材3の上面から離
間させる方向に作用する力を付与したりできるように構
成した。
In the third embodiment, instead of the hollow tube 10 of the first embodiment, a V-packing 50 as a deformable member formed in a ring shape in plan view is provided on the upper surface of the base member 3. I have. Further, the piping 11 is omitted, and the lower surface of the substrate W placed on the V packing 50 and the inner peripheral surface of the V packing 50
The space 51 surrounded by the upper surface of the base member 3 is decompressed to deform the V-packing 50 in a direction in which the substrate W approaches the upper surface of the base member 3, or the space 51 is pressurized and placed on the V-packing 50. The substrate W is configured so as to be able to apply a force acting in a direction away from the upper surface of the base member 3.

【0063】その他の構成は第1実施例と同様であるの
で、共通する部分は図1、図2と同一符号を付してその
説明を省略する。
Since other structures are the same as those of the first embodiment, common parts are denoted by the same reference numerals as in FIGS. 1 and 2, and the description thereof is omitted.

【0064】なお、この第3実施例では、真空吸引源1
7が、請求項3に記載の発明におけける変形付与手段を
構成し、気体供給源18が、請求項5に記載の発明にお
ける離間力付与手段を構成する。
In the third embodiment, the vacuum suction source 1
7 constitutes the deformation applying means in the invention of claim 3, and the gas supply source 18 constitutes the separating force applying means in the invention of claim 5.

【0065】次に、上記構成を有する第3実施例装置の
動作を図5、図7、図8を参照して説明する。
Next, the operation of the apparatus according to the third embodiment having the above configuration will be described with reference to FIGS. 5, 7, and 8. FIG.

【0066】この第3実施例装置の初期状態は、図7
(a)に示すように、開閉弁15、16が閉になってお
り、Vパッキン50は自然な状態に復元されている。ま
た、開閉弁21、23、30、31も閉になっている。
さらに、板状部材28はベース部材3の上面から離間さ
れて上方に待機され、回収部材20の上方にベース部材
3が配置されるように回収部材20は下降されている。
また、第1電極5は退避位置に位置されている。
The initial state of the device of the third embodiment is shown in FIG.
As shown in (a), the on-off valves 15 and 16 are closed, and the V packing 50 is restored to a natural state. Further, the on-off valves 21, 23, 30, 31 are also closed.
Further, the plate-like member 28 is separated from the upper surface of the base member 3 and waits upward, and the collecting member 20 is lowered so that the base member 3 is disposed above the collecting member 20.
Further, the first electrode 5 is located at the retracted position.

【0067】上記初期状態で、図示しない基板搬送機構
によって処理面Wsを上方に向けて基板Wがベース部材
3の上面のVパッキン50に載置される(図7
(b))。このとき、板状部材28は上方に待機され、
回収部材20は下降され、第1電極5は退避位置に位置
しているので、基板搬送機構は、板状部材28や回収部
材20、第1電極5(第1電極部材4の庇部4a)と干
渉せずに基板WをVパッキン50に載置することができ
る。
In the initial state, the substrate W is placed on the V packing 50 on the upper surface of the base member 3 with the processing surface Ws facing upward by a substrate transport mechanism (not shown) (FIG. 7).
(B)). At this time, the plate member 28 waits upward,
Since the recovery member 20 is lowered and the first electrode 5 is located at the retracted position, the substrate transport mechanism performs the operation of the plate-like member 28, the recovery member 20, and the first electrode 5 (the eaves portion 4a of the first electrode member 4). The substrate W can be placed on the V packing 50 without interfering with the above.

【0068】なお、Vパッキン50に基板Wが載置され
た状態で、基板Wの処理面Wsの高さ位置が第1電極5
の下面よりも高い位置になるように、Vパッキン50の
高さが決められている。
In a state where the substrate W is placed on the V packing 50, the height position of the processing surface Ws of the substrate W is
The height of the V-packing 50 is determined so as to be higher than the lower surface of the V-packing.

【0069】基板WがVパッキン50に載置されると、
開閉弁15を開にし、Vパッキン50に載置された基板
Wの下面と、Vパッキン50の内周面と、ベース部材3
の上面とで囲まれる空間51を減圧して基板Wをベース
部材3の上面に近接させる方向にVパッキン50を変形
させ、開閉弁15を閉にする(図7(c))。
When the substrate W is placed on the V packing 50,
The on-off valve 15 is opened, the lower surface of the substrate W placed on the V packing 50, the inner peripheral surface of the V packing 50, and the base member 3
The space 51 enclosed by the upper surface of the base member 3 is decompressed to deform the V packing 50 in a direction in which the substrate W approaches the upper surface of the base member 3, and the on-off valve 15 is closed (FIG. 7C).

【0070】そして、各第1電極部材4を軸芯P回りで
回転させて、各第1電極5を退避位置から接触位置に移
動させる(図8(a))。なお、各第1電極5を退避位
置から接触位置に移動させる際に、基板Wによって第1
電極5の移動が妨げられたり、第1電極5が基板Wの処
理面Wsをこすたったりしないようにするために、ベー
ス部材3の上面に近接させた基板Wの処理面Wsの高さ
位置が、図7(c)、図8(a)に示すように、第1電
極5の下面よりも低くなるように、Vパッキン50を変
形させている。
Then, each first electrode member 4 is rotated around the axis P to move each first electrode 5 from the retracted position to the contact position (FIG. 8A). When moving each first electrode 5 from the retracted position to the contact position, the first electrode 5
In order to prevent the movement of the electrode 5 from being hindered or the first electrode 5 from rubbing against the processing surface Ws of the substrate W, the height position of the processing surface Ws of the substrate W close to the upper surface of the base member 3 However, as shown in FIGS. 7C and 8A, the V packing 50 is deformed so as to be lower than the lower surface of the first electrode 5.

【0071】各第1電極5を接触位置に位置させると、
開閉弁16を開にして、空間51を加圧する(図8
(b))。これにより、Vパッキン50に載置された基
板Wがベース部材3の上面から離間する方向に移動さ
れ、接触位置に位置している第1電極5と基板Wの処理
面Wsとが接触される。さらに、空間51に供給される
気体によって、ベース部材3の上面から離間する方向に
作用する力が基板Wに付与され、この力によって基板W
の処理面Wsが第1電極5を押圧して基板Wの処理面W
sと第1電極5との接触を確実にすることができるとと
もに、各第1電極5に基板Wを押圧させて保持すること
ができる。
When each first electrode 5 is located at the contact position,
The on-off valve 16 is opened to pressurize the space 51 (FIG. 8).
(B)). Thereby, the substrate W placed on the V-packing 50 is moved in a direction away from the upper surface of the base member 3, and the first electrode 5 located at the contact position is brought into contact with the processing surface Ws of the substrate W. . Further, a force acting in a direction away from the upper surface of the base member 3 is applied to the substrate W by the gas supplied to the space 51, and this force causes the substrate W
The processing surface Ws of the substrate W presses the first electrode 5 and the processing surface W of the substrate W
The contact between the s and the first electrode 5 can be ensured, and the substrate W can be pressed and held by each first electrode 5.

【0072】なお、図7(b)に示すように、Vパッキ
ン50に基板Wが載置された状態で、基板Wの処理面W
sの高さ位置が第1電極5の下面よりも高い位置になる
ように、Vパッキン50の高さを決めているので、図8
(b)の状態で、基板Wの下面とVパッキン50の上面
とは密着した状態が維持され、空間51に供給される気
体が空間51から漏れることがなく、空間51を加圧す
ることで、ベース部材3の上面から離間する方向に作用
する力を基板Wに付与することができる。また、洗浄処
理や電解メッキ処理中も開閉弁16は開にしている。
As shown in FIG. 7B, with the substrate W placed on the V packing 50, the processing surface W
Since the height of the V-packing 50 is determined so that the height position of s is higher than the lower surface of the first electrode 5, FIG.
In the state (b), the lower surface of the substrate W and the upper surface of the V-packing 50 are kept in close contact with each other, and the gas supplied to the space 51 does not leak from the space 51, and the space 51 is pressurized. A force acting in a direction away from the upper surface of the base member 3 can be applied to the substrate W. The on-off valve 16 is also opened during the cleaning process and the electrolytic plating process.

【0073】この状態で、板状部材28を下降させて第
2電極35を基板Wの処理面Wsに近接配置させるとと
もに、回収部材20を上昇させて、基板Wの周囲に回収
部材20を配置させ、図5に示す状態として、第1実施
例と同様の動作で、前洗浄処理、電解メッキ処理、後洗
浄処理、乾燥処理を行う。
In this state, the plate-like member 28 is lowered to dispose the second electrode 35 close to the processing surface Ws of the substrate W, and the collecting member 20 is raised to dispose the collecting member 20 around the substrate W. Then, in the state shown in FIG. 5, the pre-cleaning process, the electrolytic plating process, the post-cleaning process, and the drying process are performed in the same operation as in the first embodiment.

【0074】乾燥処理を終えて、電動モーター1の回転
を停止させ、開閉弁23を閉にすると、板状部材28を
上昇させて上方に待機させるとともに、回収部材20の
上方にベース部材3が配置されるように回収部材20を
下降させる。
When the rotation of the electric motor 1 is stopped and the on-off valve 23 is closed after the drying process, the plate-like member 28 is raised to stand by above and the base member 3 is placed above the collecting member 20. The collection member 20 is lowered so as to be arranged.

【0075】この状態で、開閉弁15のみを開にして空
間51内を減圧してVパッキン50を変形させて開閉弁
15を閉にする(図8(a))。
In this state, only the on-off valve 15 is opened, the pressure in the space 51 is reduced, and the V-packing 50 is deformed to close the on-off valve 15 (FIG. 8A).

【0076】そして、各第1電極部材4を軸芯P回りで
回転させて、各第1電極5を接触位置から退避位置に移
動させる(図7(c))。なお、上述したように、変形
されたVパッキン50に載置された基板Wの処理面Ws
の高さ位置を第1電極5の下面よりも低く設定している
ので、各第1電極5を接触位置から退避位置に移動させ
る際に、第1電極5が基板Wの処理面Wsをこすたった
りすることはない。
Then, each first electrode member 4 is rotated around the axis P to move each first electrode 5 from the contact position to the retracted position (FIG. 7C). As described above, the processing surface Ws of the substrate W placed on the deformed V packing 50
Is set lower than the lower surface of the first electrode 5, the first electrode 5 moves the processing surface Ws of the substrate W when moving each first electrode 5 from the contact position to the retracted position. There is no slap.

【0077】各第1電極5が退避位置に移動されると、
空間51が常圧になる程度に、開閉弁16を開にして空
間51を加圧し(図7(b))、図示しない基板搬送機
構によって処理済の基板Wが取り出されて処理室から搬
出され、上述した初期状態に戻る(図7(a))。
When each first electrode 5 is moved to the retracted position,
The open / close valve 16 is opened to pressurize the space 51 to such an extent that the space 51 becomes normal pressure (FIG. 7B), and the processed substrate W is taken out by the substrate transfer mechanism (not shown) and carried out of the processing chamber. Then, the process returns to the initial state described above (FIG. 7A).

【0078】以上のように、上記第3実施例装置によれ
ば、第1電極5と基板Wの処理面Wsとの接触/非接触
を行うVパッキン50と、第1電極5とをベース部材3
に設けたので、ベース部材3を回転させることで、基板
Wの処理面Wsと第1電極5とを接触させた状態で、ベ
ース部材3、基板W、Vパッキン50及び第1電極5
(第1電極部材4)を回転させることができ、第1電極
5に接触された基板Wを回転させながら電解メッキ処理
を行うことができる。従って、基板Wの処理面Wsに均
一なメッキ層を形成することがきる。また、空間51を
加圧して、Vパッキン50に載置された基板Wに、ベー
ス部材3の上面から離間させる方向に作用する力を付与
するように構成したので、基板Wの処理面Wsの第1電
極5への押圧を強化することができ、基板Wの処理面W
sと第1電極5との接触をより確実にでき、電極の接触
不良をより確実に防止することができる。
As described above, according to the third embodiment, the V-packing 50 for making the first electrode 5 contact / non-contact with the processing surface Ws of the substrate W, and the first electrode 5 3
By rotating the base member 3, the base member 3, the substrate W, the V packing 50, and the first electrode 5 are brought into contact with the processing surface Ws of the substrate W and the first electrode 5 in contact with each other.
The (first electrode member 4) can be rotated, and the electrolytic plating can be performed while rotating the substrate W in contact with the first electrode 5. Therefore, a uniform plating layer can be formed on the processing surface Ws of the substrate W. Further, since the space 51 is pressurized to apply a force acting in a direction of separating the substrate W placed on the V-packing 50 from the upper surface of the base member 3, the processing surface Ws of the substrate W The pressure on the first electrode 5 can be enhanced, and the processing surface W of the substrate W
s and the first electrode 5 can be more reliably contacted, and the poor contact of the electrode can be more reliably prevented.

【0079】なお、上記第3実施例では、空間51を加
圧して、Vパッキン50に載置された基板Wに、ベース
部材3の上面から離間させる方向に作用する力を積極的
に付与するように構成したが、Vパッキン50の復元に
よって基板Wの処理面Wsが第1電極5を押圧して基板
Wの処理面Wsと第1電極5との接触を確実に行うこと
ができる場合には、空間51を加圧する構成(気体供給
源18)を省略してもよい。すなわち、開閉弁16を介
して配管14に大気開放を連通させ、図8(a)の状態
で、開閉弁15を閉、開閉弁16を開にして、空間51
を常圧に戻して、変形されたVパッキン50を復元さ
せ、このVパッキン50の復元によって基板Wの処理面
Wsを第1電極5に押圧させて基板Wの処理面Wsと第
1電極5とを接触させるように構成してもよい。
In the third embodiment, the space 51 is pressurized to positively apply a force acting on the substrate W mounted on the V-packing 50 in a direction of separating the substrate W from the upper surface of the base member 3. However, when the processing surface Ws of the substrate W presses the first electrode 5 by restoring the V packing 50, the contact between the processing surface Ws of the substrate W and the first electrode 5 can be reliably performed. May omit the configuration for pressurizing the space 51 (the gas supply source 18). That is, the opening of the atmosphere is communicated to the pipe 14 via the on-off valve 16, the on-off valve 15 is closed and the on-off valve 16 is opened in the state of FIG.
Is returned to normal pressure, the deformed V packing 50 is restored, and by the restoration of the V packing 50, the processing surface Ws of the substrate W is pressed against the first electrode 5 so that the processing surface Ws of the substrate W and the first electrode 5 May be configured to contact with.

【0080】次に、本発明の第4実施例装置の構成を図
9を参照して説明する。図9は本発明の第4実施例装置
の全体構成を示す縦断面図である。
Next, the configuration of the fourth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a longitudinal sectional view showing the overall configuration of the fourth embodiment of the present invention.

【0081】上記第1ないし第3実施例装置では、下面
に第2電極35と液の供給口34を設けた板状部材28
を基板Wの処理面Wsに近接配置させて電解メッキ処理
するように構成したが、この第4実施例装置は、従来装
置を基本構成として本発明を適用した実施例である。
In the apparatus of the first to third embodiments, the plate-like member 28 provided with the second electrode 35 and the liquid supply port 34 on the lower surface.
Is arranged close to the processing surface Ws of the substrate W to perform the electroplating process. This fourth embodiment is an embodiment in which the present invention is applied to a conventional device as a basic configuration.

【0082】すなわち、固定された下部カップ70に回
転軸2をシール状態で回転可能に立設してベース部材3
を下部カップ70の上方に配置している。この下部カッ
プ70に対して上部カップ71を昇降可能に構成してい
る。上部カップ71内にはネッシュ状の第2電極72が
設けられ、電源ユニット8から正極側となるように給電
される。
That is, the rotating shaft 2 is erected in the fixed lower cup 70 so as to be rotatable in a sealed state, and the base member 3
Are arranged above the lower cup 70. The upper cup 71 can be moved up and down with respect to the lower cup 70. A second electrode 72 in the form of a mesh is provided in the upper cup 71, and power is supplied from the power supply unit 8 to the positive electrode side.

【0083】下部カップ70の側壁73は、ベース部材
3や基板Wなどの周囲を覆うように構成され、洗浄処理
時に基板Wの外周部から周囲に飛散される、処理に使用
された後の洗浄液を受け止めて回収できるようになって
いる。また、下部カップ70の底壁74には、開閉弁7
5が介装されたドレイン管76が設けら、処理に使用さ
れた後の洗浄液や電解メッキ液がドレイン管76から排
出される。
The side wall 73 of the lower cup 70 is configured to cover the periphery of the base member 3 and the substrate W, etc., and is scattered from the outer peripheral portion of the substrate W to the periphery during the cleaning processing, and the cleaning liquid after the processing is used. And can be collected. The bottom wall 74 of the lower cup 70 has an on-off valve 7
5 is provided, and a cleaning solution or an electrolytic plating solution used for processing is discharged from the drain tube 76.

【0084】上部カップ71の天井には、従来装置と同
様に、開閉弁77を有する電解メッキ液供給管78や電
解メッキ液リターン管79などが設けられている。上部
カップ71の側方には洗浄液ノズル80も設けられてい
る。
On the ceiling of the upper cup 71, an electrolytic plating solution supply pipe 78 having an on-off valve 77, an electrolytic plating solution return pipe 79, and the like are provided as in the conventional apparatus. A cleaning liquid nozzle 80 is also provided on the side of the upper cup 71.

【0085】その他の構成は第1実施例と同様であるの
で、共通する部分は図1と同一符号を付してその説明を
省略する。
Since other structures are the same as those of the first embodiment, common parts are denoted by the same reference numerals as those in FIG. 1 and their description is omitted.

【0086】この第4実施例装置の動作は以下の通りで
ある。すなわち、上部カップ71が上昇された状態で、
第1実施例と同様にして基板Wの処理面Wsと第1電極
5とを接触させる。そして、ベース部材3や基板Wなど
を軸芯J回りで回転させながら、洗浄液ノズル80から
基板Wの処理面Wsに洗浄液を供給して前洗浄処理を行
う。次に、上部カップ71を下降させて、下部カップ7
0の底壁74と上部カップ71の下端とを密着シールし
て、電解メッキ液供給管78から電解メッキ液を供給す
るとともに、電極5、72間に給電して基板Wの処理面
Wsに電解メッキ処理を行う。そして、上部カップ71
を上昇させて、洗浄液ノズル80から基板Wの処理面W
sに洗浄液を供給して後洗浄処理を行った後、基板Wを
高速回転させて乾燥処理を行うものである。
The operation of the fourth embodiment is as follows. That is, with the upper cup 71 raised,
The processing surface Ws of the substrate W is brought into contact with the first electrode 5 in the same manner as in the first embodiment. The pre-cleaning process is performed by supplying the cleaning liquid from the cleaning liquid nozzle 80 to the processing surface Ws of the substrate W while rotating the base member 3 and the substrate W around the axis J. Next, the upper cup 71 is lowered and the lower cup 7
The bottom wall 74 of the substrate W and the lower end of the upper cup 71 are tightly sealed to supply an electrolytic plating solution from an electrolytic plating solution supply pipe 78, and also to supply power between the electrodes 5 and 72 to electrolyze the processing surface Ws of the substrate W. Perform plating. And the upper cup 71
Is raised and the processing surface W of the substrate W is
After the cleaning liquid is supplied to the substrate W to perform the post-cleaning process, the substrate W is rotated at a high speed to perform the drying process.

【0087】このような構成の装置であっても、本発明
は同様に適用することができる。なお、図9では、第1
実施例の構成で、基板Wの処理面Wsと第1電極5とを
接触させる場合を示しているが、第2、第3実施例の構
成で、基板Wの処理面Wsと第1電極5とを接触させる
ように構成してもよい。
The present invention can be similarly applied to an apparatus having such a configuration. Note that in FIG.
In the configuration of the embodiment, the case where the processing surface Ws of the substrate W is brought into contact with the first electrode 5 is shown. However, in the configurations of the second and third embodiments, the processing surface Ws of the substrate W and the first electrode 5 are connected. May be configured to contact with.

【0088】また、上記各実施例では、第1電極部材4
を軸芯P回りで回転させて第1電極5を接触位置と退避
位置との間で移動させるように構成したが、例えば、図
10に示すように、第1電極部材4を水平移動可能に構
成して、第1電極5を接触位置と退避位置との間で移動
させてもよい。
In each of the above embodiments, the first electrode member 4
Is rotated around the axis P to move the first electrode 5 between the contact position and the retracted position. For example, as shown in FIG. 10, the first electrode member 4 is horizontally movable. By configuring, the first electrode 5 may be moved between the contact position and the retracted position.

【0089】[0089]

【発明の効果】以上の説明から明らかなように、請求項
1に記載の発明によれば、第1電極と基板の処理面との
接触/非接触を行う膨縮部材と、第1電極とをベース部
材に設けたので、ベース部材を回転させることで、基板
の処理面と第1電極とを接触させた状態で、ベース部
材、基板、膨縮部材及び第1電極を回転させることがで
き、第1電極に接触された基板を回転させながら電解メ
ッキ処理を行うことができる。従って、基板の処理面に
均一なメッキ層を形成することがきる。また、膨縮部材
の膨張によって基板の処理面を第1電極に押圧して基板
の処理面と第1電極とを接触させることができ、基板の
処理面と第1電極との接触を確実に行うことができ、電
極の接触不良を確実に防止することができる。
As is clear from the above description, according to the first aspect of the present invention, the expansion / contraction member for making contact / non-contact between the first electrode and the processing surface of the substrate, Is provided on the base member. By rotating the base member, the base member, the substrate, the expansion / contraction member, and the first electrode can be rotated in a state where the processing surface of the substrate is in contact with the first electrode. The electrolytic plating can be performed while rotating the substrate in contact with the first electrode. Therefore, a uniform plating layer can be formed on the processing surface of the substrate. Further, the processing surface of the substrate is pressed against the first electrode by the expansion of the expansion / contraction member, and the processing surface of the substrate and the first electrode can be brought into contact with each other. This can reliably prevent poor contact of the electrodes.

【0090】請求項2に記載の発明によれば、膨縮部材
を平面視でリング状に形成された中空チューブで構成
し、中空チューブ内の中空部に対する加圧/減圧によ
り、中空チューブを膨張/収縮させる構成であるので、
簡単な構成で請求項1に記載の装置を実現することがで
きる。
According to the second aspect of the present invention, the expansion / contraction member is formed of a hollow tube formed in a ring shape in plan view, and the hollow tube is expanded by pressurizing / depressurizing the hollow portion in the hollow tube. / Contraction,
The device according to claim 1 can be realized with a simple configuration.

【0091】請求項3に記載の発明によれば、第1電極
と基板の処理面との接触/非接触を行う変形部材と、第
1電極とをベース部材に設けたので、ベース部材を回転
させることで、基板の処理面と第1電極とを接触させた
状態で、ベース部材、基板、変形部材及び第1電極を回
転させることができ、第1電極に接触された基板を回転
させながら電解メッキ処理を行うことができる。従っ
て、基板の処理面に均一なメッキ層を形成することがき
る。また、変形部材の復元によって基板の処理面を第1
電極に押圧して基板の処理面と第1電極とを接触させる
こともでき、基板の処理面と第1電極との接触を確実に
行うことができ、電極の接触不良を確実に防止すること
ができる。
According to the third aspect of the present invention, since the deformable member for bringing the first electrode into and out of contact with the processing surface of the substrate and the first electrode are provided on the base member, the base member is rotated. By doing so, it is possible to rotate the base member, the substrate, the deformable member and the first electrode in a state where the processing surface of the substrate and the first electrode are in contact with each other, and while rotating the substrate contacted with the first electrode. An electrolytic plating process can be performed. Therefore, a uniform plating layer can be formed on the processing surface of the substrate. In addition, the processing surface of the substrate is changed to the first by restoring the deformable member.
The processing surface of the substrate can be brought into contact with the first electrode by pressing against the electrode, so that the processing surface of the substrate and the first electrode can be reliably contacted, and the contact failure of the electrode can be reliably prevented. Can be.

【0092】請求項4に記載の発明によれば、変形部材
を平面視でリング状に形成されたVパッキンで構成し、
Vパッキンに載置された基板の下面と、Vパッキンの内
周面と、ベース部材の上面とで囲まれる空間を減圧する
ことで、基板をベース部材の上面に近接させる方向にV
パッキンを変形させる構成であるので、簡単な構成で請
求項3に記載の装置を実現することができる。
According to the fourth aspect of the present invention, the deformable member is constituted by a V-shaped packing formed in a ring shape in plan view,
By reducing the pressure in a space surrounded by the lower surface of the substrate placed on the V packing, the inner peripheral surface of the V packing, and the upper surface of the base member, V
Since the packing is deformed, the device according to claim 3 can be realized with a simple structure.

【0093】請求項5に記載の発明によれば、変形部材
に載置された基板に、ベース部材の上面から離間させる
方向に作用する力を付与する離間力付与手段をさらに備
えたので、基板の処理面の第1電極への押圧を強化する
ことができ、基板の処理面と第1電極との接触をより確
実にでき、電極の接触不良をより確実に防止することが
できる。
According to the fifth aspect of the present invention, a separation force applying means for applying a force acting in a direction to separate the substrate placed on the deformable member from the upper surface of the base member is further provided. Of the processing surface of the substrate to the first electrode can be strengthened, the contact between the processing surface of the substrate and the first electrode can be made more reliable, and the contact failure of the electrode can be more reliably prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例に係る基板メッキ装置の全
体構成を示す縦断面図である。
FIG. 1 is a longitudinal sectional view showing an overall configuration of a substrate plating apparatus according to a first embodiment of the present invention.

【図2】第1実施例のベース部材の平面図である。FIG. 2 is a plan view of a base member of the first embodiment.

【図3】第1実施例装置の動作を説明するための図であ
る。
FIG. 3 is a diagram for explaining the operation of the first embodiment device.

【図4】本発明の第2実施例装置の要部の構成を示す縦
断面図と、第2実施例のベース部材の平面図である。
FIG. 4 is a longitudinal sectional view showing a configuration of a main part of a device according to a second embodiment of the present invention, and a plan view of a base member of the second embodiment.

【図5】本発明の第3実施例装置の全体構成を示す縦断
面図である。
FIG. 5 is a longitudinal sectional view showing the entire configuration of a device according to a third embodiment of the present invention.

【図6】第3実施例のベース部材の平面図である。FIG. 6 is a plan view of a base member according to a third embodiment.

【図7】第3実施例装置の動作を説明するための図であ
る。
FIG. 7 is a diagram for explaining the operation of the device of the third embodiment.

【図8】第3実施例装置の動作を説明するための図であ
る。
FIG. 8 is a diagram for explaining the operation of the device of the third embodiment.

【図9】本発明の第4実施例装置の全体構成を示す縦断
面図である。
FIG. 9 is a longitudinal sectional view showing the overall configuration of a device according to a fourth embodiment of the present invention.

【図10】第1電極を接触位置を退避位置との間で移動
させる変形例の構成を示す図である。
FIG. 10 is a diagram showing a configuration of a modification in which a first electrode is moved between a contact position and a retracted position.

【図11】従来例に係る基板メッキ装置の全体構成を示
す縦断面図である。
FIG. 11 is a longitudinal sectional view showing the overall configuration of a conventional substrate plating apparatus.

【符号の説明】[Explanation of symbols]

1:電動モーター 3:ベース部材 5:第1電極 8:電源ユニット 10:中空チューブ 17:真空吸引源 18:気体供給源 25:電解メッキ液供給系 35:第2電極 50:Vパッキン W:基板 Ws:処理面 1: Electric motor 3: Base member 5: First electrode 8: Power supply unit 10: Hollow tube 17: Vacuum suction source 18: Gas supply source 25: Electrolytic plating solution supply system 35: Second electrode 50: V packing W: Substrate Ws: processing surface

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K024 BB09 BB12 CB01 CB02 CB04 CB08 CB11 CB26 DA04 DB10 4M104 DD52 DD99 HH20  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K024 BB09 BB12 CB01 CB02 CB04 CB08 CB11 CB26 DA04 DB10 4M104 DD52 DD99 HH20

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 基板に対してメッキ処理を施す基板メッ
キ装置であって、 ベース部材と、 前記ベース部材を回転させる回転手段と、 前記ベース部材の上面に設けられ、膨張/収縮によって
載置した基板の高さ位置を変更する膨縮部材と、 前記膨縮部材を膨張収縮させる膨張収縮手段と、 基板の処理面を上方に向けて、収縮された膨縮部材に載
置された基板の処理面の上方の接触位置と処理面の上方
から外れた退避位置との間で移動可能に、前記ベース部
材に設けられた第1電極と、 膨張された膨縮部材に載置され、接触位置で処理面と前
記第1電極とが接触された基板の処理面に電解メッキ液
を供給する電解メッキ液供給手段と、 膨張された膨縮部材に載置され、接触位置で処理面と前
記第1電極とが接触された基板の処理面に対向して配置
される第2電極と、 前記第2電極から前記第1電極へ向けて電流が流れるよ
うに給電する給電手段と、 を備えたことを特徴とする基板メッキ装置。
1. A substrate plating apparatus for plating a substrate, comprising: a base member; rotating means for rotating the base member; and a mounting means provided on an upper surface of the base member and mounted by expansion / contraction. An expansion / contraction member for changing the height position of the substrate, an expansion / contraction means for expanding / contracting the expansion / contraction member, and processing of the substrate placed on the contracted expansion / contraction member with the processing surface of the substrate facing upward. A first electrode provided on the base member, movably between a contact position above the surface and a retreat position deviated from above the processing surface; An electrolytic plating solution supply means for supplying an electrolytic plating solution to the processing surface of the substrate in which the processing surface and the first electrode are in contact with each other; Facing the processing surface of the substrate where the electrode was in contact Substrate plating apparatus characterized by comprising a second electrode location, and a feeding means for feeding so that a current flows from the second electrode to the first electrode.
【請求項2】 請求項1に記載の基板メッキ装置におい
て、 前記膨縮部材を平面視でリング状に形成された中空チュ
ーブで構成し、 前記膨張収縮手段は、前記中空チューブ内の中空部に対
する加圧/減圧により、前記中空チューブを膨張/収縮
させることを特徴とする基板メッキ装置。
2. The substrate plating apparatus according to claim 1, wherein the expansion / contraction member is formed of a hollow tube formed in a ring shape in a plan view, and the expansion / contraction means is provided for a hollow portion in the hollow tube. A substrate plating apparatus characterized by expanding / contracting the hollow tube by pressurization / decompression.
【請求項3】 基板に対してメッキ処理を施す基板メッ
キ装置であって、 ベース部材と、 前記ベース部材を回転させる回転手段と、 前記ベース部材の上面に設けられ、変形とその復元とに
よって載置した基板の高さ位置を変更する変形部材と、 基板の処理面を上方に向けて、前記変形部材に載置され
た基板を前記ベース部材の上面に近接させる方向に前記
変形部材を変形させる変形付与手段と、 前記変形付与手段で変形された変形部材に載置された基
板の処理面の上方の接触位置と処理面の上方から外れた
退避位置との間で移動可能に、前記ベース部材に設けら
れた第1電極と、 前記変形部材に載置され、接触位置で処理面と前記第1
電極とが接触された基板の処理面に電解メッキ液を供給
する電解メッキ液供給手段と、 前記変形部材に載置され、接触位置で処理面と前記第1
電極とが接触された基板の処理面に対向して配置される
第2電極と、 前記第2電極から前記第1電極へ向けて電流が流れるよ
うに給電する給電手段と、 を備えたことを特徴とする基板メッキ装置。
3. A substrate plating apparatus for performing plating on a substrate, comprising: a base member; rotating means for rotating the base member; and a mounting member provided on an upper surface of the base member, and mounted by deformation and its restoration. A deforming member for changing the height position of the placed substrate; and a processing surface of the substrate facing upward, the deforming member being deformed in a direction in which the substrate placed on the deforming member approaches the upper surface of the base member. A deforming means, and the base member movably between a contact position above a processing surface of the substrate placed on the deformation member deformed by the deformation applying means and a retracted position deviated from above the processing surface. A first electrode disposed on the deformable member, and a processing surface and the first electrode at a contact position.
An electroplating solution supply means for supplying an electroplating solution to the processing surface of the substrate in contact with the electrode; being mounted on the deformable member;
A second electrode disposed opposite to the processing surface of the substrate in contact with the electrode; and a power supply unit configured to supply power so that current flows from the second electrode to the first electrode. Characteristic substrate plating equipment.
【請求項4】 請求項3に記載の基板メッキ装置におい
て、 前記変形部材を平面視でリング状に形成されたVパッキ
ンで構成し、 前記変形付与手段は、前記Vパッキンに載置された基板
の下面と、前記Vパッキンの内周面と、前記ベース部材
の上面とで囲まれる空間を減圧することで、基板を前記
ベース部材の上面に近接させる方向に前記Vパッキンを
変形させることを特徴とする基板メッキ装置。
4. The substrate plating apparatus according to claim 3, wherein the deformable member is formed of a V-shaped packing formed in a ring shape in a plan view, and the deformation applying unit is provided on the substrate mounted on the V-shaped packing. A space surrounded by the lower surface of the V packing, the inner peripheral surface of the V packing, and the upper surface of the base member, thereby deforming the V packing in a direction in which the substrate approaches the upper surface of the base member. Substrate plating equipment.
【請求項5】 請求項3または4に記載の基板メッキ装
置において、 前記変形部材に載置された基板に、前記ベース部材の上
面から離間させる方向に作用する力を付与する離間力付
与手段をさらに備えたことを特徴とする基板メッキ装
置。
5. The substrate plating apparatus according to claim 3, further comprising: a separating force applying unit that applies a force acting on the substrate placed on the deformable member in a direction of separating the substrate from the upper surface of the base member. A substrate plating apparatus further provided.
JP10244761A 1998-08-31 1998-08-31 Substrate plating apparatus Pending JP2000073197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10244761A JP2000073197A (en) 1998-08-31 1998-08-31 Substrate plating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10244761A JP2000073197A (en) 1998-08-31 1998-08-31 Substrate plating apparatus

Publications (1)

Publication Number Publication Date
JP2000073197A true JP2000073197A (en) 2000-03-07

Family

ID=17123519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10244761A Pending JP2000073197A (en) 1998-08-31 1998-08-31 Substrate plating apparatus

Country Status (1)

Country Link
JP (1) JP2000073197A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003064485A (en) * 2001-08-23 2003-03-05 Denso Corp Surface treatment apparatus and surface treatment method
WO2014199909A1 (en) * 2013-06-14 2014-12-18 カヤバ工業株式会社 Holding device, and high-speed plating device provided with same
US10006143B2 (en) 2013-06-14 2018-06-26 Kyb Corporation Power supplying member and high-speed plating machine provided with the same
CN108626104A (en) * 2018-06-22 2018-10-09 佛山科学技术学院 A kind of anti-evacuator
WO2019102866A1 (en) * 2017-11-22 2019-05-31 東京エレクトロン株式会社 Apparatus for producing semiconductor device, method for producing semiconductor device, and computer storage medium

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003064485A (en) * 2001-08-23 2003-03-05 Denso Corp Surface treatment apparatus and surface treatment method
WO2014199909A1 (en) * 2013-06-14 2014-12-18 カヤバ工業株式会社 Holding device, and high-speed plating device provided with same
JP2015001007A (en) * 2013-06-14 2015-01-05 カヤバ工業株式会社 Holding device and high-speed plating apparatus with the same
CN105308221A (en) * 2013-06-14 2016-02-03 Kyb株式会社 Holding device, and high-speed plating device provided with same
US10006143B2 (en) 2013-06-14 2018-06-26 Kyb Corporation Power supplying member and high-speed plating machine provided with the same
US10006137B2 (en) 2013-06-14 2018-06-26 Kyb Corporation Holding device and high-speed plating machine provided with the same
WO2019102866A1 (en) * 2017-11-22 2019-05-31 東京エレクトロン株式会社 Apparatus for producing semiconductor device, method for producing semiconductor device, and computer storage medium
CN108626104A (en) * 2018-06-22 2018-10-09 佛山科学技术学院 A kind of anti-evacuator
CN108626104B (en) * 2018-06-22 2024-04-30 佛山科学技术学院 Evacuating-proof device

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