JP2020532130A - エピタキシャル堆積プロセスのための注入アセンブリ - Google Patents
エピタキシャル堆積プロセスのための注入アセンブリ Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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Abstract
Description
Claims (15)
- 本体を有するガス分配アセンブリと、
前記ガス分配アセンブリ内に形成された複数のガス注入チャネルであって、前記複数のガス注入チャネルの少なくとも一部が前記ガス分配アセンブリに形成されたブラインドチャネルに隣接する、複数のガス注入チャネルと、
前記複数のガス注入チャネルおよび前記ブラインドチャネルの一方の側を境界付ける整流板であって、前記ガス分配アセンブリの前記ブラインドチャネルの位置に対応する位置に非穿孔部分を含む、整流板と
を含むガス導入インサート。 - 前記ブラインドチャネルが、前記ガス分配アセンブリの端部に配置されている、請求項1に記載のガス導入インサート。
- 前記ブラインドチャネルが2つのブラインドチャネルを含み、前記整流板が各対向端部に前記非穿孔部分を含む、請求項1に記載のガス導入インサート。
- 前記整流板の長さが、前記ガス分配アセンブリのガス注入部分の長さよりも大きい、請求項1に記載のガス導入インサート。
- 前記ガス分配アセンブリの前記ガス注入部分の前記長さが、基板の直径に実質的に等しい、請求項4に記載のガス導入インサート。
- 前記複数のガス注入チャネルのそれぞれが、前記整流板、外壁、および中央隔壁によって境界付けられている、請求項1に記載のガス導入インサート。
- 前記ブラインドチャネルが、前記整流板、前記外壁、および前記ガス分配アセンブリの端部壁によって境界付けられている、請求項6に記載のガス導入インサート。
- 少なくとも2つのガス源からの前駆体ガスを複数のプレナムに供給するための少なくとも1つの入り口を有する注入ブロックと、
前記注入ブロックに結合されたガス分配アセンブリと、
前記複数のプレナムの一方の側を境界付ける整流板であって、各対向端部に非穿孔部分を含む、整流板と、
前記ガス分配アセンブリの本体内に形成された複数のガス注入チャネルであって、前記複数のガス注入チャネルの少なくとも一部が前記整流板の前記非穿孔部分の位置に対応する前記本体に形成されたブラインドチャネルに隣接する、複数のガス注入チャネルと
を含む、反応チャンバのためのガス導入インサート。 - 前記複数のガス注入チャネルのそれぞれが、前記整流板、外壁、および中央隔壁によって境界付けられている、請求項8に記載のガス導入インサート。
- 前記ブラインドチャネルが、前記整流板、前記外壁、および前記ガス分配アセンブリの端部壁によって境界付けられている、請求項9に記載のガス導入インサート。
- 前記整流板の長さが、前記ガス分配アセンブリのガス注入部分の長さよりも大きい、請求項8に記載のガス導入インサート。
- 前記ガス分配アセンブリの前記ガス注入部分の前記長さが、基板の直径に実質的に等しい、請求項11に記載のガス導入インサート。
- 前記ブラインドチャネルが、前記ガス分配アセンブリの端部に配置されている、請求項8に記載のガス導入インサート。
- 前記ブラインドチャネルが2つのブラインドチャネルを含み、前記整流板が各対向端部に前記非穿孔部分を含む、請求項8に記載のガス導入インサート。
- 前記ガス分配アセンブリを横切る速度が±0.5メートル/秒変動する、請求項8に記載のガス導入インサート。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762550048P | 2017-08-25 | 2017-08-25 | |
US62/550,048 | 2017-08-25 | ||
PCT/US2018/041529 WO2019040195A1 (en) | 2017-08-25 | 2018-07-10 | INJECTION ASSEMBLY FOR EPITAXIAL DEPOSIT PROCESSES |
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JP2020532130A true JP2020532130A (ja) | 2020-11-05 |
JP6987215B2 JP6987215B2 (ja) | 2021-12-22 |
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Country | Link |
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US (1) | US20190062909A1 (ja) |
EP (1) | EP3673505A4 (ja) |
JP (1) | JP6987215B2 (ja) |
KR (1) | KR102349317B1 (ja) |
CN (1) | CN110998793B (ja) |
TW (1) | TWI754765B (ja) |
WO (1) | WO2019040195A1 (ja) |
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CN111364021B (zh) * | 2020-01-22 | 2022-07-22 | 北京北方华创微电子装备有限公司 | 一种工艺腔室 |
CN111748792B (zh) * | 2020-07-10 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 气相沉积装置 |
CN115029775A (zh) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | 一种气体水平流动的外延生长设备 |
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JP2003115459A (ja) * | 2001-09-28 | 2003-04-18 | Applied Materials Inc | 成膜装置のプロセスチャンバー、成膜装置および成膜方法 |
JP2007324286A (ja) * | 2006-05-31 | 2007-12-13 | Sumco Techxiv株式会社 | 成膜反応装置及び同方法 |
JP2010258169A (ja) * | 2009-04-23 | 2010-11-11 | Sumco Techxiv株式会社 | 成膜反応装置及び成膜基板製造方法 |
US20140273503A1 (en) * | 2013-03-14 | 2014-09-18 | Memc Electronic Materials, Inc. | Methods of gas distribution in a chemical vapor deposition system |
JP2015531171A (ja) * | 2012-08-28 | 2015-10-29 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置 |
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US5551982A (en) * | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
JP2003133238A (ja) * | 2001-10-26 | 2003-05-09 | Applied Materials Inc | 成膜装置のプロセスチャンバー、成膜装置および成膜方法 |
US20100071614A1 (en) * | 2008-09-22 | 2010-03-25 | Momentive Performance Materials, Inc. | Fluid distribution apparatus and method of forming the same |
US9127360B2 (en) * | 2009-10-05 | 2015-09-08 | Applied Materials, Inc. | Epitaxial chamber with cross flow |
WO2012122054A2 (en) * | 2011-03-04 | 2012-09-13 | Novellus Systems, Inc. | Hybrid ceramic showerhead |
WO2012128783A1 (en) * | 2011-03-22 | 2012-09-27 | Applied Materials, Inc. | Liner assembly for chemical vapor deposition chamber |
JP5386046B1 (ja) * | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
WO2014179014A1 (en) * | 2013-05-01 | 2014-11-06 | Applied Materials, Inc. | Inject and exhaust design for epi chamber flow manipulation |
JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
KR101487409B1 (ko) * | 2013-07-19 | 2015-01-29 | 주식회사 엘지실트론 | 에피텍셜 반응기 |
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WO2016154052A1 (en) * | 2015-03-25 | 2016-09-29 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
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2018
- 2018-07-02 TW TW107122743A patent/TWI754765B/zh active
- 2018-07-10 WO PCT/US2018/041529 patent/WO2019040195A1/en unknown
- 2018-07-10 JP JP2020511426A patent/JP6987215B2/ja active Active
- 2018-07-10 KR KR1020207008275A patent/KR102349317B1/ko active IP Right Grant
- 2018-07-10 US US16/031,691 patent/US20190062909A1/en not_active Abandoned
- 2018-07-10 EP EP18848741.7A patent/EP3673505A4/en active Pending
- 2018-07-10 CN CN201880054509.0A patent/CN110998793B/zh active Active
Patent Citations (5)
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JP2003115459A (ja) * | 2001-09-28 | 2003-04-18 | Applied Materials Inc | 成膜装置のプロセスチャンバー、成膜装置および成膜方法 |
JP2007324286A (ja) * | 2006-05-31 | 2007-12-13 | Sumco Techxiv株式会社 | 成膜反応装置及び同方法 |
JP2010258169A (ja) * | 2009-04-23 | 2010-11-11 | Sumco Techxiv株式会社 | 成膜反応装置及び成膜基板製造方法 |
JP2015531171A (ja) * | 2012-08-28 | 2015-10-29 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置 |
US20140273503A1 (en) * | 2013-03-14 | 2014-09-18 | Memc Electronic Materials, Inc. | Methods of gas distribution in a chemical vapor deposition system |
Also Published As
Publication number | Publication date |
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WO2019040195A1 (en) | 2019-02-28 |
CN110998793B (zh) | 2023-09-05 |
EP3673505A4 (en) | 2021-06-02 |
JP6987215B2 (ja) | 2021-12-22 |
KR20200033355A (ko) | 2020-03-27 |
CN110998793A (zh) | 2020-04-10 |
EP3673505A1 (en) | 2020-07-01 |
TW201923137A (zh) | 2019-06-16 |
KR102349317B1 (ko) | 2022-01-07 |
US20190062909A1 (en) | 2019-02-28 |
TWI754765B (zh) | 2022-02-11 |
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