JP2020530666A5 - - Google Patents

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Publication number
JP2020530666A5
JP2020530666A5 JP2020530452A JP2020530452A JP2020530666A5 JP 2020530666 A5 JP2020530666 A5 JP 2020530666A5 JP 2020530452 A JP2020530452 A JP 2020530452A JP 2020530452 A JP2020530452 A JP 2020530452A JP 2020530666 A5 JP2020530666 A5 JP 2020530666A5
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JP
Japan
Prior art keywords
laser
epitaxial structure
microlens
aperture
back surface
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Application number
JP2020530452A
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English (en)
Japanese (ja)
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JP7418328B2 (ja
JP2020530666A (ja
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Priority claimed from PCT/US2018/046556 external-priority patent/WO2019033120A1/en
Publication of JP2020530666A publication Critical patent/JP2020530666A/ja
Publication of JP2020530666A5 publication Critical patent/JP2020530666A5/ja
Application granted granted Critical
Publication of JP7418328B2 publication Critical patent/JP7418328B2/ja
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JP2020530452A 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造 Active JP7418328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762543972P 2017-08-11 2017-08-11
US62/543,972 2017-08-11
PCT/US2018/046556 WO2019033120A1 (en) 2017-08-11 2018-08-13 HIGH POWER LASER GRID STRUCTURE

Publications (3)

Publication Number Publication Date
JP2020530666A JP2020530666A (ja) 2020-10-22
JP2020530666A5 true JP2020530666A5 (cg-RX-API-DMAC7.html) 2021-09-24
JP7418328B2 JP7418328B2 (ja) 2024-01-19

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Family Applications (1)

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JP2020530452A Active JP7418328B2 (ja) 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造

Country Status (5)

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EP (1) EP3665753A4 (cg-RX-API-DMAC7.html)
JP (1) JP7418328B2 (cg-RX-API-DMAC7.html)
AU (1) AU2018314281B2 (cg-RX-API-DMAC7.html)
CA (1) CA3072763A1 (cg-RX-API-DMAC7.html)
WO (1) WO2019033120A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7583266B2 (ja) 2021-02-12 2024-11-14 日亜化学工業株式会社 発光装置
GB2614300B (en) * 2021-12-23 2025-02-19 Toshiba Kk A photon source and method of fabricating a photon source
US20250062597A1 (en) * 2023-08-17 2025-02-20 Ii-Vi Delaware, Inc. Semiconductor Laser Assembly with Thin Film Lithium Compound Waveguide
US12199132B1 (en) * 2024-05-08 2025-01-14 Aurora Operations, Inc. Manufacturing process for semiconductor optical device for lidar sensor system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6597713B2 (en) 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP4295870B2 (ja) 1999-09-14 2009-07-15 浜松ホトニクス株式会社 レーザ装置
US20060023757A1 (en) * 2004-07-30 2006-02-02 Aram Mooradian Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers
JP2007173393A (ja) 2005-12-20 2007-07-05 Denso Corp レーザ装置
US10038304B2 (en) * 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US8979338B2 (en) * 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
CN103181040B (zh) 2010-11-03 2016-04-27 皇家飞利浦电子股份有限公司 用于垂直外部腔体表面发射激光器的光学元件
DE102012203672B4 (de) 2012-03-08 2018-03-15 Osram Oled Gmbh Optoelektronisches Bauelement
EP3000157B1 (en) * 2012-04-20 2018-12-12 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
CA2994159A1 (en) * 2015-07-30 2017-02-02 Optipulse Inc. Rigid high power and high speed lasing grid structures
EP3365729B1 (en) * 2015-10-21 2025-05-28 ams-OSRAM International GmbH Coded pattern projector

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