JP2020516066A - 固体光エミッタパッケージ、ランプ、照明器具、及び固体光エミッタパッケージの製造方法 - Google Patents
固体光エミッタパッケージ、ランプ、照明器具、及び固体光エミッタパッケージの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 189
- 238000010292 electrical insulation Methods 0.000 claims abstract description 31
- 239000006096 absorbing agent Substances 0.000 claims abstract description 15
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 13
- 239000000615 nonconductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 49
- 239000012782 phase change material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012772 electrical insulation material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000001934 delay Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 24
- 239000004020 conductor Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000003763 carbonization Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229920002994 synthetic fiber Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
Claims (13)
- 固体光エミッタパッケージであって、
固体光エミッタダイと、
第1のリードフレーム、及び前記第1のリードフレームから電気的に絶縁された第2のリードフレームであって、前記第1のリードフレーム及び前記第2のリードフレームは、外部電源から電力を受けるためのものであり、受けた電力を前記固体光エミッタダイに供給するように構成されており、前記固体光エミッタダイが、前記第1のリードフレーム上に少なくとも部分的に設けられている、第1のリードフレーム及び第2のリードフレームと、
電気絶縁材と、
前記第1のリードフレームと前記第2のリードフレームとの間に配置され、前記第1のリードフレームから、及び前記第2のリードフレームから、前記電気絶縁材によって電気的に絶縁されている熱的要素であって、熱吸収体又は熱拡散体の少なくとも一方であり、固体光エミッタダイと直接熱接触していない、熱的要素と、
前記第1のリードフレームと前記第2のリードフレームとの間の前記電気絶縁材及び前記熱的要素を跨ぐブリッジ要素であって、前記固体光エミッタダイと前記第2のリードフレームとの間の電気的接続を得るためのものであるブリッジ要素と、を備え、
前記第1のリードフレーム及び前記第2のリードフレームの頂面に続く仮想平面で見ると、前記熱的要素は、前記第1のリードフレーム又は前記第2のリードフレームを少なくとも部分的に囲んで、前記第1のリードフレームと前記第2のリードフレームとの間の熱伝達を遅延させる、固体光エミッタパッケージ。 - 前記第1のリードフレームの或る縁部が、前記第2のリードフレームの或る縁部に対向して配置されており、前記第1のリードフレームの前記或る縁部から前記第2のリードフレームの前記或る縁部までの全ての最短経路が、前記熱的要素と交差している、請求項1に記載の固体光エミッタパッケージ。
- 前記熱的要素はU字形状を有し、前記第1のリードフレーム又は前記第2のリードフレームは、前記U字形状の熱的要素の内側に設けられている、請求項1に記載の固体光エミッタパッケージ。
- 前記第1のリードフレーム及び前記第2のリードフレームの頂面に続く仮想平面で見ると、前記第1のリードフレーム又は前記第2のリードフレームは、前記熱的要素によって完全に囲まれている、請求項1又は2に記載の固体光エミッタパッケージ。
- ハウジングコンポーネントを備え、前記ハウジングコンポーネントは、前記第1のリードフレーム、前記第2のリードフレーム、前記熱的要素、及びオプションとして前記固体光エミッタダイを支持するように構成されており、及びオプションとして、前記ハウジングコンポーネントは、前記第1のリードフレームと、前記熱的要素と、前記第2のリードフレームとの間に前記電気絶縁材を形成している、請求項1乃至4のいずれか一項に記載の固体光エミッタパッケージ。
- 前記熱的要素が、高い体積熱容量を有するサーマルマスであること、
前記熱的要素が、相変化材料で作られていること、
前記熱的要素が、比較的高い、例えば、200W/mKよりも高い、熱伝導率を有する材料で作られていること、
前記熱的要素が、熱伝導性金属で作られていること、
のうちの少なくとも1つである、請求項1乃至5のいずれか一項に記載の固体光エミッタパッケージ。 - 前記熱的要素は、前記固体光エミッタパッケージの周囲部に対する40K/Wよりも低い熱抵抗を有する、請求項1乃至6のいずれか一項に記載の固体光エミッタパッケージ。
- 前記ブリッジ要素は、一端で前記第2のリードフレームに電気的に結合されており、他端で前記固体光エミッタダイに電気的に結合されている、第1のワイヤボンドである、請求項1乃至7のいずれか一項に記載の固体光エミッタパッケージ。
- 一端で前記第1のリードフレームに電気的に結合されており、他端で前記固体光エミッタダイに電気的に結合されている、第2のワイヤボンドを更に備える、請求項8に記載の固体光エミッタパッケージ。
- 前記ブリッジ要素は、前記固体光エミッタダイによって形成されており、前記固体光エミッタダイは、
前記第1のリードフレームとの電気的接続を形成するために前記第1のリードフレーム上に設けられた第1の部分と、
前記第2のリードフレームとの電気的接続を形成するために前記第2のリードフレーム上に設けられた第2の部分と、
前記電気絶縁材及び前記熱的要素を跨ぐ第3の部分と、を備える、請求項1乃至7のいずれか一項に記載の固体光エミッタパッケージ。 - 請求項1乃至10のいずれか一項に記載の固体光エミッタパッケージを備える、ランプ。
- 請求項1乃至10のいずれか一項に記載の固体光エミッタパッケージ、又は請求項11に記載のランプを備える、照明器具。
- 固体光エミッタパッケージの製造方法であって、
第1のリードフレーム、第2のリードフレーム、固体光エミッタダイ、電気絶縁材、及び熱的要素を得るステップであって、前記第の1リードフレーム及び前記第2のリードフレームは、電力を受け、前記固体光エミッタダイへ前記電力を伝導することができ、前記熱的要素が、熱を吸収することができ、又は熱を拡散することができ、前記熱的要素が、固体光エミッタダイと直接熱接触していない、ステップと、
オプションとして、ブリッジ要素を得るステップと、
前記第1のリードフレームと前記第2のリードフレームとが互いに電気的に絶縁されるように、前記第1のリードフレーム、前記第2のリードフレーム、前記熱的要素、及び前記電気絶縁材を配置するステップであって、前記熱的要素が、前記第1のリードフレームと前記第2のリードフレームとの間に配置され、前記熱的要素が、前記第1のリードフレーム及び前記第2のリードフレームから前記電気絶縁材によって電気的に絶縁される、ステップと、
前記固体光エミッタダイを前記固体光エミッタパッケージ内に配置し、それによって、前記固体光エミッタダイの少なくとも一部が前記第1のリードフレーム上に配置される、ステップと、
上面図で見ると前記熱的要素及び前記電気絶縁材の上方に、前記ブリッジ要素を配置し、前記第2のリードフレーム及び前記固体光エミッタダイと接触させて前記ブリッジ要素を配置し、前記第2のリードフレームと前記固体光エミッタダイとの間に電気的接続をもたらすステップ、及び
前記固体光エミッタダイと前記第2のリードフレームとの間の電気的接続のために、上面図で見ると前記熱的要素及び前記電気絶縁材の上方に、また部分的に前記第2のリードフレーム上に前記固体光エミッタダイを配置するステップであって、前記第1のリードフレーム上に配置された前記固体光エミッタダイの一部もまた、前記第1のリードフレームに電気的に接続される、ステップ
のうちの一方と、を含み、
前記第1のリードフレーム及び前記第2のリードフレームの頂面に続く仮想平面で見ると、前記熱的要素は、前記第1のリードフレーム又は前記第2のリードフレームを少なくとも部分的に囲んで、前記第1のリードフレームと前記第2のリードフレームとの間の熱伝達を遅延させる、製造方法。
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