JP2020188179A - Light-emitting device - Google Patents

Abstract

To provide a light-emitting device including a plurality of light emitting elements and having high operational stability and light extraction efficiency.SOLUTION: A light-emitting device 10 includes a light emitting element 20, a wavelength conversion portion 30 that is arranged on the light emitting element, has a bottom surface 30a facing the top surface of the light emitting element, narrows upward, includes a first part where the sides form a first angle with respect to the bottom surface, and a second part formed above the first part and whose sides form a second angle larger than the first angle with respect to the bottom surface, and converts the wavelength of light emitted from the light emitting element, and a reflection portion 40 that covers the side surface of the wavelength conversion portion.SELECTED DRAWING: Figure 1

Description

The present invention relates to a light emitting device including a light emitting element such as a light emitting diode.

The light emitting device includes, for example, a substrate provided with terminals, wiring, and the like, and at least one light emitting element mounted on the substrate. Further, for example, when used for lighting applications, the light emitting device has a wavelength converter such as a phosphor layer arranged on the light emitting element.

Such a light emitting device includes a light emitting element having an upper surface as a light extraction surface, a light emitting element provided on the light emitting element, and having an upper surface and a lower surface, and light emitted from the light emitting element is incident from the lower surface to enter the upper surface. Patent Document 1 discloses a light emitting device including a translucent member that emits light to the outside via a light-transmitting member and a light-reflecting resin that covers at least a part of the translucent member.

Japanese Unexamined Patent Publication No. 2010-272847

However, as an example of the problem of the light emitting device of Patent Document 1, light may be confined in the region of the side end portion in the translucent member, and the light extraction efficiency of the light emitting device may be lowered.

The present invention has been made in view of the above points, and an object of the present invention is to provide a light emitting device having high light extraction efficiency.

The light emitting device according to the present invention has a light emitting element and a bottom surface which is arranged on the light emitting element and faces the upper surface of the light emitting element and is narrowed upward, and the side surface has a first angle with respect to the bottom surface. A second portion formed above the first portion and having a side surface forming a second angle larger than the first angle with respect to the bottom surface, and from the light emitting element. It is characterized by having a wavelength conversion unit that converts the wavelength of the emitted light and a reflection unit that covers the side surface of the wavelength conversion unit.

It is a perspective view of the light emitting device which concerns on Example 1. FIG. It is a top view of the light emitting device which concerns on Example 1. FIG. It is sectional drawing of the light emitting device along the line AA of FIG. It is explanatory drawing explaining the manufacturing process of the wavelength conversion part of FIG. It is explanatory drawing explaining the manufacturing process of the wavelength conversion part of FIG. It is sectional drawing of the light emitting device which concerns on Example 2. FIG.

Hereinafter, examples of the present invention will be described in detail.

FIG. 1 is a perspective view showing a configuration of a light emitting device 10 according to a first embodiment of the present invention. As shown in FIG. 1, the mounting substrate 11 is a rectangular plate-shaped substrate having a mounting surface 11a. For the mounting substrate 11, for example, a substrate such as AlN or alumina is used.

The two n-side power feeding pads 12 are metal wiring electrode patterns provided on the mounting surface 11a. Each of the n-side power feeding pads 12 is formed in a rectangular plate shape. The n-side power supply pad 12 is connected to an external power source. Each of the n-side power feeding pads 12 is arranged at one end of the mounting board 11 in the lateral direction. Each of the n-side power feeding pads 12 is arranged along the longitudinal direction of the mounting substrate 11.

The p-side feeding pad 13 is a metal wiring electrode provided on the mounting surface 11a. The p-side power supply pad 13 is electrically separated from the n-side power supply pad 12. Each of the p-side power feeding pads 13 is formed in a rectangular plate shape. Each of the p-side power feeding pads 13 is provided with its longitudinal direction parallel to the lateral direction of the mounting board 11. Each of the p-side feeding pads 13 is arranged along the longitudinal direction of the mounting substrate 11.

The two light emitting elements 20 are provided on the mounting surface 11a of the mounting board 11. More specifically, each of the light emitting elements 20 is arranged on each of the p-side power feeding pads 13. Each of the light emitting elements 20 is a semiconductor light emitting element such as a light emitting diode. Each of the light emitting elements 20 can emit blue light, for example.

The support substrate 21 of each light emitting element 20 is a rectangular plate-shaped substrate having conductivity such as a Si substrate. The semiconductor laminate 22 of each light emitting element 20 is provided on the main surface of the support substrate 21. The semiconductor laminate 22 is attached to the support substrate 21 via a metal bonding layer (not shown). The semiconductor laminate 22 is composed of a plurality of semiconductor layers including an active layer.

Each of the semiconductor laminates 22 is configured by laminating a p-type semiconductor layer, an active layer, and an n-type semiconductor layer in this order from the support substrate 21 side. The p-type semiconductor layer is, for example, a Mg-doped GaN layer. The active layer (light emitting layer) is, for example, a semiconductor layer having a multiple quantum well structure composed of an InGaN well layer and a GaN barrier layer. The n-type semiconductor layer is, for example, a Si-doped GaN layer. The wavelength of the emitted light emitted from the active layer is a wavelength corresponding to the material and composition of the semiconductor laminate 22. The upper surface of the semiconductor laminate 22 is the light emitting surface.

Each of the back surface electrodes 23 is formed in a rectangular plate shape. Each of the back surface electrodes 23 is a metal electrode formed on the surface opposite to the main surface of the support substrate 21. Each of the back surface electrodes 23 is bonded to the n-side feeding pad 12 via a conductive bonding material (not shown).

The p-type semiconductor layer of each semiconductor laminate 22 is electrically separated from the support substrate 21 and the back surface electrode 23 by an insulating layer (not shown) provided on the main surface of the support substrate 21.

The n-type semiconductor layer of each semiconductor laminate 22 is formed with the support substrate 21 and the back surface electrode 23, for example, through a contact hole (not shown) provided through the insulating layer on the main surface of the support substrate 21. It is electrically connected.

A metal layer (reflecting metal, not shown) is provided on each insulating layer of the support substrate 21. This metal layer is electrically connected to the p-type semiconductor layer.

The two feeding portions 24 are metal electrodes provided on the metal layer. Each of the feeding portions 24 is electrically connected to the metal layer of the support substrate 21. Each of the feeding portions 24 is formed in a rectangular plate shape. Each of the power feeding portions 24 is provided over the longitudinal direction of the support substrate 21. Each of the power feeding portions 24 is provided at one end of the support substrate 21 in the lateral direction.

Therefore, each of the power feeding units 24 is electrically connected to the p-type semiconductor layer of the semiconductor laminate 22 via the metal layer. Further, the current path between the p-type semiconductor layer and the power feeding unit 24 is electrically separated from the support substrate 21 by the insulating layer.

Each of the feeding portions 24 is electrically connected to the p-side feeding pad 13 provided on the mounting surface 11a of the mounting board 11 via the bonding wire 19.

As described above, the light emitting element 20 includes a support substrate 21, a semiconductor laminate 22, a back surface electrode 23, and a power feeding unit 24. The light emitting element 20 is a top light emitting type element having a thin-film type bonded structure. The upper surface of the light emitting portion (not shown) of the semiconductor laminate 22 is the light emitting surface of the light emitting element 20.

The thin film type bonding structure includes a step of growing the semiconductor laminate 22 on a growth substrate (not shown), a step of bonding the semiconductor laminate 22 to the support substrate 21, and irradiating the growth substrate with, for example, a laser. It is formed through a so-called laser lift-off step, which is removed by the process.

The wavelength conversion unit 30 is provided on the light emitting surface of the two light emitting elements 20. The wavelength conversion unit 30 is a translucent member having transparency to the light emitted from the light emitting element 20. The wavelength conversion unit 30 extends in the arrangement direction of the light emitting element 20.

The wavelength conversion unit 30 is, for example, a ceramic plate obtained by sintering a fluorescent material. The ceramic plate is produced, for example, by firing alumina and a phosphor at a high temperature. Examples of the phosphor include YAG (Yttrium Aluminum Garnet: Y ₃ Al ₅ O ₁₂ ).

The wavelength conversion unit 30 may be a resin layer containing particles of a phosphor. In this case, the resin layer is formed by mixing a phosphor with a resin raw material such as an epoxy resin or a silicone resin, and then curing the resin raw material.

The wavelength conversion unit 30 includes a bottom surface 30a formed on the proximal side of the semiconductor laminate 22 of the light emitting element 20, an upper surface 30b formed on the distal side of the semiconductor laminate 22 of the light emitting element 20, and a bottom surface. It has a side surface 30c formed from 30a to an upper surface 30b.

The bottom surface 30a and the top surface 30b of the wavelength conversion unit 30 are formed parallel to the mounting surface 11a of the mounting substrate 11. Further, the bottom surface 30a and the top surface 30b of the wavelength conversion unit 30 are formed parallel to the main surface of the support substrate 21.

The wavelength conversion unit 30 is a first frustum portion (first) formed in a frustum shape following the prism portion 31 above the prism portion (third portion) 31 formed in a columnar shape and the prism portion 31. 32, and above the first frustum portion 32, there is a second frustum portion (second portion) 33 formed in a frustum shape following the first frustum portion 32. The prism portion 31, the first frustum portion 32, and the second frustum portion 33 are integrally formed.

The prismatic portion 31 is formed in a rectangular parallelepiped shape. The prismatic portion 31 is not limited to a rectangular parallelepiped shape, and may be formed in a polygonal columnar shape, for example. The prism portion 31 has a side surface 31a formed so as to extend perpendicularly to the bottom surface 30a. The side surface 31a of the prism portion 31 is formed on the bottom surface 30a side of the wavelength conversion unit 30.

The first frustum portion 32 is narrowed upward, and its side surface 32a is inclined with respect to the bottom surface 30a. The side surface 32a of the first frustum portion 32 is formed following the side surface 31a of the prism portion 31.

The portion transitioning from the first frustum portion 32 to the second frustum portion 33 is formed by bending. In other words, the side surface 33a of the second frustum 33 is inclined with respect to the bottom surface 30a at an angle larger than the side surface 32a of the first frustum 32. Therefore, the side surface 33a of the second frustum 33 is formed following the side surface 32a of the first frustum 32, and is formed on the upper surface 30b side of the wavelength conversion unit 30.

The light emitting device 10 has a reflective resin 40 as a reflecting portion that covers the side surface of each semiconductor laminate 22 of the light emitting element 20 and the side surface of the wavelength conversion unit 30. The reflective resin 40 is shown by a broken line in this figure for explanation.

The reflective resin 40 is made of, for example, a white resin material having reflectivity to each of the emitted light from each of the light emitting elements 20 and the output light from the wavelength conversion unit 30. The resin material is made of a so-called white resin in which a light scattering material (white pigment) is dispersed in a thermosetting resin such as a silicone resin or an epoxy resin. As the light scattering material, titanium oxide, zinc oxide or the like can be used.

The reflective resin 40 embeds the side surface of the semiconductor laminate 22 of the light emitting element 20, the p-side feeding pad 13, and the bonding wire 19. The reflective resin 40 functions as a sealing material for the light emitting device 10.

FIG. 2 is a top view of the light emitting device 10 according to the first embodiment. As shown in FIG. 2, the mounting board 11 is formed in a rectangular shape when viewed from above, that is, when viewed from a direction perpendicular to the mounting surface 11a of the mounting board 11.

The support substrate 21 of each light emitting element 20 is formed in a rectangular shape when viewed from above. Each of the support boards 21 is arranged in the lateral direction along the longitudinal direction of the mounting board 11. The semiconductor laminate 22 is indicated by a alternate long and short dash line in the figure. The upper surface 22a of the semiconductor laminate 22 is formed in a rectangular shape.

The prism portion 31 of the wavelength conversion unit 30 has a bottom surface having a shape that covers the upper surface 22a of the semiconductor laminate 22, that is, the bottom surface 30a of the wavelength conversion unit 30. The bottom surface 30a of the wavelength conversion unit 30 is arranged so as to face the top surface 22a of the semiconductor laminate 22. The bottom surface 30a of the wavelength conversion unit 30 is formed in a rectangular shape. The bottom surface 30a is formed along the top surface 22a of the semiconductor laminate 22.

The first frustum portion 32 of the wavelength conversion unit 30 has a bottom surface having a shape that covers the upper surface 22a of the semiconductor laminate 22 in a top view. The first frustum portion 32 has a shape in which the width in the direction parallel to the light emitting surface of the light emitting element 20 narrows upward. The upper surface and the lower surface of the first frustum portion 32 are formed in a rectangular shape. The bottom surface of the first frustum portion 32 has the same size and shape as the upper surface of the prism portion 31.

The second frustum 33 of the wavelength conversion unit 30 has a shape in which the width narrows upward in a direction parallel to the light emitting surface of the light emitting element 20. The upper surface and the lower surface of the second frustum portion 33 are formed in a rectangular shape.

The bottom surface of the second frustum portion 33 has a smaller area than the top surface 22a of the semiconductor laminate 22. In other words, the size of the contour of the bottom surface of the second frustum portion 33 of the wavelength conversion unit 30 is smaller than the size of the contour of the top surface 22a of the semiconductor laminate 22.

The upper surface of the second frustum 33, that is, the upper surface 30b of the wavelength conversion unit 30, is formed to be smaller than the area of the bottom surface 30a of the wavelength conversion unit 30. In other words, the size of the contour of the upper surface 30b of the wavelength conversion unit 30 is smaller than the size of the contour of the bottom surface 30a of the wavelength conversion unit 30. The bottom surface of the second frustum 33 has the same size and shape as the top surface of the first frustum 32. Further, the light extraction surface of the light emitting device 10 is defined by the upper surface 30b of the wavelength conversion unit 30.

FIG. 3 shows a cross section of the light emitting device 10 along the line AA of FIG. As shown in FIG. 3, the n-side feeding pad 12 is a metal wiring electrode pattern provided on the mounting surface 11a of the mounting board 11 and the surface 11b on the opposite side of the mounting surface 11a. The n-side power supply pad 12 is connected to an external power source.

The n-side feeding pad 12 provided on the mounting surface 11a of the mounting board 11 and the n-side feeding pad 12 provided on the surface 11b opposite to the mounting surface 11a are through holes (through holes) formed through the mounting board 11. They are electrically connected to each other via (not shown).

The p-side feeding pad 13 is a metal wiring electrode pattern provided on the mounting surface 11a of the mounting board 11 and the surface 11b on the opposite side of the mounting surface 11a. The p-side power supply pad 13 is provided electrically separated from the n-side power supply pad 12.

The p-side feeding pad 13 provided on the mounting surface 11a of the mounting board 11 and the p-side feeding pad 13 provided on the surface 11b opposite to the mounting surface 11a are through holes (through holes) formed through the mounting board 11. They are electrically connected to each other via (not shown).

The wavelength conversion unit 30 is adhered to the upper surface of each of the semiconductor laminates 22 of the light emitting element 20 via the transparent adhesive 50. In the figure, the bottom surface 30a of the wavelength conversion unit 30 in contact with the transparent adhesive 50 is adhered to the top surface 22a of the semiconductor laminate 22. In other words, the bottom surface 30a of the wavelength conversion unit 30 is adhered to the top surface 22a of the semiconductor laminate 22 via the transparent adhesive 50.

The transparent adhesive 50 covers the side surfaces and the upper surface of the semiconductor laminate 22, and also covers the bottom surface 30a of the wavelength conversion unit 30.

The transparent adhesive 50 has transparency to the light emitted from the semiconductor laminate 22. The transparent adhesive 50 is formed by curing an adhesive containing a resin such as an epoxy resin or a silicone resin, for example. Therefore, the light emitted from the semiconductor laminate 22 can enter the wavelength conversion unit 30 via the transparent adhesive 50.

The first frustum portion 32 is narrowed upward, and its side surface 32a is inclined at a first angle θ1 with respect to the bottom surface 30a. In other words, the side surface 32a of the first frustum 32 is inclined to a first angle θ1 that is an acute angle with respect to the bottom surface 30a. The first angle θ1 is an angle facing the side surface 32a from the inside of the first frustum portion 32.

The second frustum portion 33 is narrowed upward, and its side surface 33a is inclined at a second angle θ2 with respect to the bottom surface 30a. In other words, the side surface 33a of the second frustum 33 is inclined at a second angle θ2, which is an acute angle with respect to the bottom surface 30a. The second angle θ2 is an angle facing the side surface 33a from the inside of the second frustum portion 33. The second angle θ2 may be an angle of less than 90 degrees with respect to the bottom surface 30a of the wavelength conversion unit 30.

The light emitted from each of the light emitting elements 20 is incident on the wavelength conversion unit 30, and after the wavelength of at least a part of the light is converted, it is taken out to the outside. The light that has traveled from each of the light emitting elements 20 and the wavelength conversion unit 30 toward the side surfaces thereof is reflected by the reflective resin 40. Therefore, it is taken out from the upper surface 30b of most of the wavelength conversion units 30. As a result, for example, white light is emitted from the light emitting device 10.

As described above, the first frustum portion 32 of the wavelength conversion portion 30 is formed so as to be narrowed upward. The light emitted from the light emitting element 20 is reflected on the side surface 32a of the first frustum toward the upper surface 30b of the wavelength conversion unit 30, that is, the light extraction surface. As a result, the light emitted from the light emitting element 20 is focused toward the light extraction surface. Similarly, the second frustum portion 33 of the wavelength conversion portion 30 is formed so as to be narrowed upward. The light emitted from the light emitting element 20 is reflected toward the light extraction surface on the side surface 33a of the second frustum portion 33. As a result, the light emitted from the light emitting element 20 is focused toward the light extraction surface. As described above, the light emitting device 10 of the present invention has high light extraction efficiency because the light emitted from the light emitting element 20 can be advanced to the upper surface 30b side of the wavelength conversion unit 30. Here, the light extraction efficiency is the efficiency at which the light generated from the semiconductor laminate 22 is emitted to the outside of the light emitting device 10.

Here, the second angle θ2 formed by the side surface 33a of the second frustum 33 on the bottom surface 30a of the wavelength conversion unit 30 is the first angle θ1 formed by the side surface 32a of the first frustum 32 on the bottom surface 30a. Greater than. Therefore, when the reflective resin 40 is a resin material, it is possible to prevent the resin from creeping up on the upper surface 30b of the wavelength conversion unit 30.

Here, the light emitted from the side surface of the semiconductor laminate 22 propagates through the transparent adhesive 50 and is incident on the wavelength conversion unit 30. Here, when the light emitted from the semiconductor laminate 22 is reflected by the wavelength conversion unit 30 and heads toward the semiconductor laminate 22, the light extraction efficiency is reduced. By covering the side surface of the semiconductor laminate 22 with the transparent adhesive 50, the light emitted from the semiconductor laminate 22 can be reflected toward the wavelength conversion unit 30. Further, since the bottom surface 30a of the wavelength conversion unit 30 has a larger area than the top surface 22a of the semiconductor laminate 22, the light emitted from the semiconductor laminate 22 can be efficiently incident on the wavelength conversion layer 30.

Since the reflective resin 40 is a white resin material, the light emitted from the light emitting element 20 can be reflected and the light emitting element 20 can be sealed.

Since the wavelength conversion unit 30 has a columnar prism portion 31 having a bottom surface having a shape covering the upper surface 22a of the semiconductor laminate 22 of the light emitting element 20, the light traveling from the light emitting element 20 to the side surface 31a of the prism portion 31 is emitted. , Reflected by the reflective resin 40. As a result, the light travels toward the side surface 32a of the first frustum 32 and then toward the upper surface 30b of the wavelength conversion unit 30. Therefore, the light extraction efficiency of the light emitting device 10 can be improved.

The wavelength conversion unit 30 of the light emitting device 10 described above can be manufactured, for example, by cutting the ceramic plates 30P shown in FIGS. 4 and 5. FIG. 4 shows a first processing step of processing the ceramic plate 30P. More specifically, FIG. 4 schematically shows a cross section of the dicing sheet 60, the ceramic plate 30P arranged on the dicing sheet 60, and the first blade B1 used when processing the ceramic plate 30P. There is.

The first blade B1 has a cross-sectional shape that is formed following the first tapered portion b1 and the first tapered portion having an isosceles trapezoidal cross-sectional shape, and whose taper inclination is lower than that of the first tapered portion b1. It has a base portion b3 extending in a direction perpendicular to the upper bottom of the isosceles trapezoid from the lower bottom side portion of the isosceles trapezoid of the second tapered portion b2 and the second tapered portion b2 of the trapezoid.

In the first processing step, the ceramic plate 30P is arranged on the dicing sheet 60. Next, the first blade B1 is inserted in the direction perpendicular to the upper surface of the ceramic plate 30P to form a groove. Specifically, the first blade B1 is inserted into the ceramic plate 30P until the second tapered portion of the first blade B1 reaches the inside of the ceramic plate 30P.

As a result, a portion to be the first frustum portion 32 is formed on the ceramic plate 30P by the first tapered portion of the first blade B1. Further, the second tapered portion b2 of the first blade B1 forms a portion of the ceramic plate 30P to be the second frustum portion 33.

FIG. 5 shows a second processing step of processing the ceramic plate 30P. In the second processing step, the ceramic plate 30P subjected to the first processing step shown in FIG. 4 is cut using the second blade B2. As shown in FIG. 5, the second blade B2 has a pair of side surfaces b4 parallel to each other.

In the second processing step, the second blade B2 is inserted into the groove formed in the first processing step of the ceramic plate 30P in the direction perpendicular to the ceramic plate 30P. As a result, the plate piece of the individualized ceramic plate 30P becomes the wavelength conversion unit 30. Therefore, the second blade B2 forms a portion to be the prism portion 31 on the ceramic plate 30P.

As described above, the wavelength conversion unit 30 can be formed by processing the ceramic plate 30P using the first blade B1 and the second blade B2. In other words, by going through the first processing step and the second processing step described above, the wavelength conversion unit 30 is formed with the first frustum portion 32, the second frustum portion 33, and the prism portion 31. To.

The light emitting device 10 according to the second embodiment will be described. The light emitting device 10A according to the second embodiment is different from the light emitting device 10 according to the first embodiment in the form of the wavelength conversion unit 30. The other points will be omitted because the configuration is the same as that of the light emitting device 10 according to the first embodiment.

FIG. 6 shows a cross section of the light emitting device 10A according to the second embodiment. As shown in FIG. 6, the wavelength conversion unit 30 has a first frustum portion 32 and a second frustum portion 33. That is, the light emitting device 10A of the present embodiment is different from the light emitting device 10 of the first embodiment in that the wavelength conversion unit 30 does not have the prism portion 31. Therefore, the first frustum portion 32 has a bottom surface having a shape that covers the upper surface 22a of the semiconductor laminate 22, that is, the bottom surface 30a of the wavelength conversion unit 30. The bottom surface 30a has a shape that covers the top surface 22a of the semiconductor laminate 22 of the light emitting element 20.

The bottom surface 30a of the wavelength conversion unit 30 is arranged so as to face the top surface 22a of the semiconductor laminate 22. The bottom surface 30a of the wavelength conversion unit 30 is formed in a rectangular shape. The bottom surface 30a is formed along the top surface 22a of the semiconductor laminate 22.

As described above, even if the light emitting device 10A is configured, the first frustum portion 32 of the wavelength conversion unit 30 is formed so as to be narrowed upward. The light emitted from the light emitting element 20 is reflected on the side surface 32a of the first frustum toward the upper surface 30b of the wavelength conversion unit 30, that is, the light extraction surface. As a result, the light emitted from the light emitting element 20 is focused toward the light extraction surface. Similarly, the second frustum portion 33 of the wavelength conversion portion 30 is formed so as to be narrowed upward. The light emitted from the light emitting element 20 is reflected toward the light extraction surface on the side surface 33a of the second frustum portion 33. As a result, the light emitted from the light emitting element 20 is focused toward the light extraction surface. As described above, the light emitting device 10 of the present invention has high light extraction efficiency because the light emitted from the light emitting element 20 can be advanced to the upper surface 30b side of the wavelength conversion unit 30.

In the above embodiment, an example in which two light emitting elements 20 are mounted on the mounting substrate 11 has been described. However, the number of light emitting elements 20 mounted on the mounting substrate 11 may be 1 or 2 or more.

10 Light emitting device 11 Mounting board 20 Light emitting element 21 Support board 22 Semiconductor laminate 22a Top surface 30 Wavelength conversion unit 30a Bottom surface 30b Top surface 31 First cone base portion (first portion)
32 Second frustum (second part)
33 Prism (third part)
40 Reflective resin (reflective part)
50 Transparent adhesive θ1 First angle θ2 Second angle

Claims (7)

Light emitting element and
A first portion arranged on the light emitting element, having a bottom surface facing the upper surface of the light emitting element and narrowing upward, and a side surface forming a first angle with respect to the bottom surface and the first portion. Wavelength conversion that has a second portion formed above the portion and whose side surface forms a second angle larger than the first angle with respect to the bottom surface, and converts the wavelength of light emitted from the light emitting element. Department and
A light emitting device including a reflecting portion that covers the side surface of the wavelength conversion portion. The light emitting device according to claim 1, wherein the bottom surface of the second portion of the wavelength conversion unit has an area smaller than that of the upper surface of the light emitting element. The light emitting device according to claim 1 or 2, wherein the second portion of the wavelength conversion unit is formed in a frustum shape. The light emitting device according to any one of claims 1 to 3, wherein the reflecting portion is made of a white resin material. The light emitting device according to any one of claims 1 to 4, wherein the wavelength conversion unit has a columnar third portion having a bottom surface. The light emitting element is
Support board and
Including a semiconductor laminate arranged on the support substrate,
The light emitting device according to any one of claims 1 to 5, wherein the bottom surface of the wavelength conversion unit is adhered to the upper surface of the semiconductor laminate. The bottom surface of the wavelength conversion unit is adhered to the upper surface of the semiconductor laminate via a transparent adhesive.
The light emitting device according to claim 6, wherein the transparent adhesive covers the side surfaces and the upper surface of the semiconductor laminate, and also covers the bottom surface of the wavelength conversion unit.

Images