KR20170003229A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20170003229A
KR20170003229A KR1020150093623A KR20150093623A KR20170003229A KR 20170003229 A KR20170003229 A KR 20170003229A KR 1020150093623 A KR1020150093623 A KR 1020150093623A KR 20150093623 A KR20150093623 A KR 20150093623A KR 20170003229 A KR20170003229 A KR 20170003229A
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KR
South Korea
Prior art keywords
light emitting
emitting diode
diode chip
electrode
light
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Application number
KR1020150093623A
Other languages
Korean (ko)
Inventor
이윤섭
김다혜
조양식
김래현
Original Assignee
서울반도체 주식회사
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Priority to KR1020150093623A priority Critical patent/KR20170003229A/en
Publication of KR20170003229A publication Critical patent/KR20170003229A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

Disclosed is a light emitting device. The light emitting device includes: a substrate; a light emitting diode chip located on the substrate; a wavelength converting unit located on the light emitting diode chip; and a sidewall unit configured to partially surround a lateral surface of the light emitting diode chip and a lateral surface of the wavelength converting unit and to be in contact with a part of the lateral surface of the wavelength converting unit, a part of the top surfaces of first and second upper electrodes, and at least a part of the lateral surface of the light emitting diode chip. The distance between the first upper electrode and the second upper electrode is 30 to 80 m.

Description

[0001] LIGHT EMITTING DEVICE [0002]

The present invention relates to a light emitting device, and more particularly, to a high output light emitting device with improved light emission uniformity and heat emission efficiency.

Since light emitting diodes emit light with a relatively narrow half width, typical light emitting diodes emit light that is generally near monochromatic. Therefore, in order to realize white light in a light emitting device including a light emitting diode, white light is realized by inducing color mixture of light by using a fluorescent material. Since the phosphor absorbs light having a relatively short wavelength and emits light having a relatively long wavelength, a light emitting diode emitting light of a short wavelength such as a blue light emitting diode or a UV light emitting diode is coated with a phosphor to emit white light .

In a light emitting device using such a light emitting diode, as it is driven at a high current, a lot of heat is generated during light emission, so that the lifetime of the light emitting device may be reduced, and the uniformity of light emission in the light emitting region of the light emitting device may be deteriorated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device which is improved in heat emission efficiency and can be driven at a high current.

Another object of the present invention is to provide a light emitting device in which color deviation in a light emitting surface of a light emitting device is reduced.

A light emitting device according to an aspect of the present invention includes: a substrate including a first upper electrode and a second upper electrode; A light emitting diode chip disposed on the substrate and mounted on the first and second upper electrodes; A wavelength converter disposed on the light emitting diode chip; And at least a portion of a side surface of the wavelength conversion portion, a portion of an upper surface of the first and second upper electrodes, and a portion of a side surface of the light emitting diode chip, And the spacing distance between the first and second upper electrodes is 30 to 80 占 퐉.

Wherein at least one side of the wavelength conversion portion may include a first surface and a second surface positioned on the first surface, and an angle between the first surface and a lower surface of the wavelength conversion portion is set to be smaller than an angle between the second surface and the wavelength conversion And may be at least partially exposed on the second surface.

The second surface may protrude upward from the upper surface of the sidewall portion and the upper surface of the wavelength conversion portion may be positioned higher than the upper surface of the sidewall portion.

The first surface may be formed perpendicular to a lower surface of the wavelength conversion portion, and the second surface may be formed to have an acute angle with respect to a lower surface of the wavelength conversion portion.

The wavelength converting portion may include four sides, and each of the four sides may include the second surface.

The light emitting diode chip may include a first electrode pad and a second electrode pad formed under the light emitting diode chip.

The substrate may further include a base, the first and second upper electrodes may be positioned on the base, and each of the first and second electrode pads may be disposed on each of the first and second upper electrodes And can be electrically connected.

The spacing distance between the first and second upper electrodes may be equal to or smaller than the spacing distance between the first and second electrode pads.

The substrate includes: a first lower electrode and a second lower electrode located under the base; A first connection electrode electrically connecting the first upper electrode and the first lower electrode; And a second connection electrode electrically connecting the second upper electrode and the second lower electrode, wherein a distance between the first and second lower electrodes is different from a distance between the first and second upper electrodes It can be bigger than the distance.

The light emitting device may further include a bonding layer positioned between the first electrode pad and the first upper electrode and between the second electrode pad and the second upper electrode, And may be formed by eutectic bonding.

The upper surface of the side wall portion may include an inclined surface that becomes lower toward the lateral direction of the side wall portion.

The inclined surface may include a curved surface.

The light emitting device may further include an adhesive portion positioned between the wavelength conversion portion and the LED chip.

The bonding portion may be further extended to at least a part of a side surface of the LED chip, and a bonding portion located on a side surface of the LED chip may be interposed between the side wall portion and the LED chip.

The portion of the adhesive portion located on the side surface of the LED chip may have an inclined side surface, and the inclined side surface of the adhesive portion may include a flat surface and / or a concave surface.

The side wall portion may have a light reflective property.

The side wall portion may include TiO 2 .

The wavelength conversion unit may have a horizontal area larger than a horizontal area of the LED chip.

The wavelength converting unit may include at least one of one or more green phosphors, one or more cyan phosphors, and one or more yellow phosphors.

The bonding portion may include one or more red phosphors.

According to the embodiments of the present invention, by providing the light emitting device including the wavelength conversion portion including the first surface and the second surface, the color deviation in the light emitting surface of the light emitting device is reduced and the light emitting device with improved light emitting efficiency Can be provided. Also, the light emitting device may include a light emitting diode chip having a substrate including first and second upper electrodes having a relatively narrow gap and electrode pads formed at a lower portion, thereby providing a light emitting device having improved heat emission efficiency . Therefore, even when driven at a high current, the reliability of the light emitting device due to heat can be prevented from lowering, and a light emitting device having excellent light emitting characteristics can be provided.

1 is a perspective view illustrating a light emitting device according to an embodiment of the present invention.
2 is a plan view illustrating a light emitting device according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a light emitting device according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
5 and 6 are a plan view and a partial cross-sectional view for explaining the color deviation in the light emitting region of the light emitting devices according to the embodiments of the present invention and the comparative example.
7 and 8 are a plan view and a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where there are other components in between. Like reference numerals designate like elements throughout the specification.

FIG. 1 is a perspective view illustrating a light emitting device according to an embodiment of the present invention. FIG. 2 is a plan view illustrating a light emitting device according to an embodiment of the present invention, and FIG. 3 is a cross- FIG. 3 is a cross-sectional view of a portion corresponding to the line A-A 'in FIG. 1 and FIG. 2. FIG.

1 to 3, the light emitting device includes a light emitting diode chip 110, a wavelength conversion unit 120, and a side wall unit 140. Furthermore, the light emitting device may further include a substrate 200, a bonding portion 130, and a protection device 150.

The substrate 200 may be positioned at the bottom of the light emitting device and may support the light emitting diode chip 110 and the side wall 140. The substrate 200 may be an insulating or conductive substrate, and may also be a PCB including a conductive pattern. In the case where the substrate 200 is an insulating substrate, the substrate 200 may include a polymer material or a ceramic material, and may include a ceramic material having excellent thermal conductivity, such as AlN. When the substrate 200 includes a PCB including a conductive pattern, the substrate 200 may include a conductive pattern including a base and at least two electrodes.

3, the substrate 200 may include a base 210, and may further include a first electrode 220 and a second electrode 230 . At this time, the base 210 may support the electrodes 220 and 230, and may include an insulating material to insulate the electrodes 220 and 230 from each other. For example, the base 210 may comprise a ceramic material such as AlN with good thermal conductivity.

The first electrode 220 includes a first upper electrode 221 and the second electrode 230 includes a second upper electrode 231. The first electrode 220 may further include a first lower electrode 225 and a first connection electrode 223 and the second electrode 230 may include a second lower electrode 235 and a second connection electrode 223. [ (233).

The first upper electrode 221 and the second upper electrode 231 may be positioned on the upper surface of the base 210 and may be electrically connected to the LED chip 110. The first lower electrode 225 may be located below the lower surface of the base 210. At this time, the first connection electrode 223 may pass through the base 210 to electrically connect the first upper electrode 221 and the first lower electrode 225. Similarly, the second lower electrode 235 may be positioned on the lower surface of the base 210, and the second connection electrode 233 may extend through the base 210 to form the second upper electrode 231 , 235 can be electrically connected.

The first upper electrode 221 and the first lower electrode 225 may be electrically connected to each other by connection electrodes (not shown) located along the sides of the base 210. In addition, the first lower electrode 225 may be formed not to be positioned below the base 210 but to protrude from the side surface of the base 210. The second upper electrode 231 and the second lower electrode 235 may be formed in a similar manner.

The distance D1 between the first upper electrode 221 and the second upper electrode 231 may be smaller than the distance D3 between the first lower electrode 225 and the second lower electrode 235. [ For example, the distance D1 between the first and second upper electrodes 221 and 231 may be about 30 to 80 mu m. By setting the interval between the first and second upper electrodes 221 and 231 connected to the light emitting diode chip 110 within the above range, the heat emitted from the light emitting diode chip 110 during the light emitting device operation can be effectively Emitting efficiency of the light-emitting device can be improved. Therefore, even when driven at a high current, the reliability of the light emitting device due to heat can be prevented from deteriorating. The gap D3 between the first and second lower electrodes 225 and 235 may be about 150 mu m or more. Accordingly, by setting the interval between the first and second lower electrodes 225 and 235 within the above-described range, the first and second lower electrodes 225 and 235 Can be minimized.

The sum of the areas of the first and second upper electrodes 221 and 231 may be larger than the horizontal area of the wavelength converter 120. Therefore, as shown in the drawing, the first and second upper electrodes 221 and 231 may be formed to extend further in the horizontal direction as compared with the wavelength conversion unit 120.

The substrate 200 may further include a heat dissipation pad (not shown) positioned on the lower surface of the base 210 or at least partially penetrating the base 210. The heat dissipation pad can further improve the heat dissipation efficiency of the substrate 200. The heat dissipation pad may be positioned between the first and second lower electrodes 225 and 235, but is not limited thereto. The electrodes 220 and 230 may include an electrically conductive material and may include metals such as Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Au, Cu,

The protection element 150 may be located on one side of the substrate 200 or within the substrate 200. In this embodiment, the protection element 150 is located inside the base 210 to prevent the light from being absorbed by the protection element 150. The protection element 150 may protect the light emitting diode chip 110 from an electrostatic discharge or a surge and may include, for example, a zener diode, a TVS diode, and the like.

The light emitting diode chip 110 may be positioned on the substrate 200 and may include the light emitting structure 111, the first pad electrode 113, and the second pad electrode 115.

The light emitting structure 111 may include an n-type semiconductor layer, a p-type semiconductor layer, and an active layer located between the n-type semiconductor layer and the p-type semiconductor layer, The light may be emitted. The light emitting diode 110 may emit blue light or UV light, but the present invention is not limited thereto. The first pad electrode 113 and the second pad electrode 115 may be electrically connected to the n-type semiconductor layer and the p-type semiconductor layer (or vice versa), respectively. In particular, the first and second pad electrodes 113 and 115 may be positioned below the light emitting diode chip 110. For example, as shown in the drawing, the first pad electrode 113 and the second pad The electrode 115 may be formed to extend downward from the light emitting structure 111. In various embodiments, the first and second pad electrodes 113 and 115 may be positioned in substantially the same plane as the lower surface of the light emitting structure 111 and may be positioned higher than the lower surface of the light emitting structure 111 It is possible. When the first and second pad electrodes 113 and 115 are positioned higher than the lower surface of the light emitting structure 111, grooves may be formed on the lower surface of the light emitting structure 111, The electrodes 113 and 115 can be exposed. The structure of the light emitting diode chip 110 is not limited. For example, the first pad electrode 113 and the second pad electrode 115 may be a flip chip type semiconductor light emitting device Device.

The first and second pad electrodes 113 and 115 may be electrically connected to the first electrode 221 and the second electrode 231 of the substrate 200, respectively. Accordingly, power can be supplied to the light emitting diode chip 110 through the first and second electrodes 221 and 231. The distance D2 between the first and second pad electrodes 113 and 115 may be greater than or substantially equal to the distance D1 between the first upper electrode 221 and the second upper electrode 231. [ Accordingly, the heat generated from the light emitting diode chip 110 can be more efficiently transferred to the substrate 200, thereby improving the heat emission efficiency of the light emitting device.

The horizontal areas of the first and second pad electrodes 113 and 115 may be smaller than the horizontal areas of the first and second upper electrodes 221 and 231. Further, the thickness of the first and second pad electrodes 113 and 115 may be smaller than the thickness of the first and second upper electrodes 221 and 231. Accordingly, the distance from the light emitting structure 111 to the first and second upper electrodes 221 and 231 is reduced to improve the heat emission efficiency, and at the same time, the heat emission path is formed between the first and second upper electrodes 221 and 231, 231) so that the heat emission efficiency of the light emitting device can be improved.

Meanwhile, the first and second pad electrodes 113 and 115 may be bonded to the first and second upper electrodes 221 and 231, respectively. Accordingly, a bonding layer 160 may be interposed between the first and second pad electrodes 113 and 115 and the first and second upper electrodes 221 and 231, respectively. The bonding layer 160 may have an eutectic structure and may include Eutectic-bonded AuSn, for example. By forming the bonding layer 160 with AuSn that is process-bonded, the thermal conductivity of the bonding layer 160 can be improved.

The wavelength conversion unit 120 may be positioned on the light emitting diode chip 110 and may cover at least a part of the upper surface of the light emitting diode chip 110. In addition, the area of the wavelength converter 120 may be larger than the area of the top surface of the light emitting diode chip 110. Alternatively, the wavelength converter 120 may be formed to have a substantially same area as the top surface of the light emitting diode chip 110 . In addition, a part of the side of the wavelength conversion section 120 may contact the side wall section 140 having light reflectivity.

The wavelength conversion unit 120 may have a sheet shape, and the sheet-type wavelength conversion unit 120 may be adhered on the light emitting diode chip 110. The sheet-form wavelength conversion unit 120 can be adhered by the adhering unit 130, and the adhering unit 130 will be described in detail later.

The wavelength converting unit 120 may include at least one of one or more green phosphors, one or more cyan phosphors, and one or more yellow phosphors. Further, the wavelength converter 120 may further include one or more red phosphors. For example, the wavelength converter 120 may include a garnet fluorescent material, an aluminate fluorescent material, a sulfide fluorescent material, an oxynitride fluorescent material, a nitride fluorescent material, a fluoride fluorescent material, a silicate fluorescent material, So that light of various colors can be emitted. For example, when the light emitting diode chip 110 emits light having a peak wavelength in the blue light band, the wavelength converter 120 converts light having a peak wavelength longer than blue light (for example, green light, Yellow light) emitted from the phosphor. Alternatively, when the light emitting diode chip 110 emits light having a peak wavelength in the UV band, the wavelength converter 120 may convert light having a peak wavelength of longer wavelength than UV light (e.g., blue light, green light, Or yellow light) emitted from the phosphor. Thus, the light emitting device 10 can emit white light. However, the present invention is not limited thereto, and in particular, in this embodiment, the wavelength converter 120 may include one kind of phosphor.

In some embodiments, the wavelength converter 120 may include a phosphor and a carrier to support the phosphor. The supporting portion may include a polymer resin or a ceramic such as glass or alumina. The phosphor may be randomly arranged in the support. For example, the wavelength conversion unit 120 may include a phosphor in silicone (PiS) in which a phosphor is disposed in a Si-based support, a phosphor in ceramic (PiC) in which a phosphor is disposed in an Al 2 O 3 support , A phosphor in glass (PiG) in which a phosphor is disposed, and the like. The wavelength converter 120 including the above-described structure may be manufactured in the form of a sheet or a plate and positioned on the light emitting diode chip 110 or may be bonded to the light emitting diode chip 110. By using glass or ceramics as the carrier of the wavelength converter 120, the reliability of the light emitting device during high current driving can be improved.

Further, in various embodiments, the wavelength converter 120 may include a single crystal or polycrystalline material formed of a phosphor material. For example, the wavelength converter 120 may include a single crystal phosphor or a polycrystal phosphor. The wavelength converter 120 including the single crystal phosphor or the polycrystalline phosphor may be provided in the form of a phosphor sheet or a plate. The sheet-to-plate type wavelength conversion unit 120 may be made of a phosphor, and for example, the single crystal phosphor may be a single crystal of YAG: Ce. Light passing through the wavelength conversion portion 120 in the form of a single crystal or polycrystalline phosphor sheet (or plate) can emit light having a substantially uniform color coordinate, and the wavelength conversion including the single crystal or polycrystalline phosphor sheet (or plate) When the light emitting device 120 is applied to a plurality of light emitting devices, the color coordinate deviation between the plurality of light emitting devices can be reduced.

On the other hand, at least one side surface of the wavelength conversion portion 120 includes a first surface 121 and a second surface 122 located on the first surface 121. The angle formed between the first surface 121 and the lower surface of the wavelength conversion portion 120 may be set such that the second surface 122 is longer than the wavelength May be larger than an angle formed between the lower surface of the conversion unit 120 and the lower surface of the conversion unit 120. For example, as shown in the figure, the wavelength converter 120 is formed in a rectangular parallelepiped shape, and all four sides of the rectangular parallelepiped may include a first surface 121 and a second surface 122. At this time, the first surface 121 may be formed substantially perpendicular to the lower surface of the wavelength conversion unit 120. The second surface 122 may be formed to have an acute angle with respect to the lower surface of the wavelength conversion unit 120.

In addition, at least a part of the second surface 122 of the wavelength conversion unit 120 may be exposed to the outside. At least a part of at least one side of the wavelength conversion part 120 may be surrounded by the side wall part 140 and at least a part of the second side 122 may not be covered by the side wall part 140, As shown in FIG. In some embodiments, a portion of the first surface 121 may be further exposed to the top of the light emitting device. A portion of the wavelength converting portion 120 may protrude upward from the upper surface of the side wall portion 140 so that the upper surface of the wavelength converting portion 120 may be positioned higher than the upper surface of the side wall portion 140. For example, as shown in the drawing, the wavelength converter 120 of the wavelength converter 120 is formed in a rectangular parallelepiped shape, and all four sides of the rectangular parallelepiped include a first surface 121 and a second surface 122 . At this time, the first surface 121 may be covered by the side wall portion 140, and the second surface 122 may be exposed to the upper portion of the light emitting device.

Since at least one side of the wavelength converter 120 includes the first and second surfaces 121 and 122, it is possible to reduce the color deviation of the light emitted from the light emitting surface of the light emitting device, Can be improved. This will be described in more detail with reference to FIGS. 5 and 6. FIG. 5 and 6 are a plan view and a partial cross-sectional view for explaining the color deviation in the light emitting region of the light emitting devices according to the embodiments of the present invention and the comparative example, respectively. 5 and 6, the L1 light and the L2 light are light traveling from the same position toward the same direction.

Referring to FIG. 5, in the comparative example of FIG. 5, the light emitting device includes a wavelength converter 120 'that does not include first and second surfaces having different inclination. At this time, the side surface of the wavelength converting portion 120 'is covered with the side wall portion 140. 5B, when some of the light emitted from the light emitting layer 111LE of the light emitting structure 111 is directed to the upper edge of the wavelength converting portion 120 ', the light L1 is reflected by the sidewall portion 140, and the reflected light is totally reflected on the upper surface of the wavelength converting portion 120 'and then reflected to the lower portion. That is, the ratio of the light emitted through the upper edge of the wavelength converter 120 'may be relatively reduced, and the light emitted through the upper edge of the wavelength converter 120' may be transmitted through the wavelength converter 120 ' The length of the path passing through the inside of the optical waveguide becomes longer, and the proportion of the wavelength-converted light can be increased. Accordingly, in the light emitting surface corresponding to the upper surface of the wavelength converting portion 120 'of the light emitting device, the light emitting color in the peripheral region 120'e of the light emitting surface is the light emitting color in the remaining portion of the light emitting surface It can be different. For example, when the light emitted from the light emitting structure 111 is blue light and the wavelength converter 120 'includes a yellow phosphor, the light emission color in the peripheral area 120'e of the light emitting surface is the light emitting surface The yellow color is stronger than the emission color in the remaining part of the light emitting layer.

On the other hand, referring to FIG. 6, in the embodiment of FIG. 6, the light emitting device includes a first surface 121 and a second surface 122 having different inclination. At this time, a part of the side surface of the wavelength conversion portion 120 is covered with the side wall portion 140, and at least a part of the second surface 122 is exposed. 6B, when some of the light L2 emitted from the light emitting layer 111LE of the light emitting structure 111 is directed to the upper edge of the wavelength converting portion 120, the light L2 Is discharged to the outside through the second surface 122. That is, the ratio of the light emitted through the upper edge of the wavelength converter 120 does not decrease relatively, and the light emitted through the upper edge of the wavelength converter 120 passes through the inside of the wavelength converter 120 The longer the path is. Accordingly, in the light emitting surface corresponding to the upper surface of the wavelength conversion portion 120 of the light emitting device, the light emitting color in the peripheral region 120e of the light emitting surface is substantially similar to the light emitting color in the remaining portion of the light emitting surface . For example, when the light emitted from the light emitting structure 111 is blue light and the wavelength converting portion 120 includes a yellow phosphor, the light emission color in the peripheral region 120e of the light emitting surface of the light emitting structure 111 becomes the remaining portion It is possible to prevent a phenomenon in which a yellow color appears more strongly than a color of light emitted from the phosphor.

Therefore, according to this embodiment, uniform light emission characteristics can be provided over the light emitting surface of the light emitting device. Thus, it is possible to prevent the color coordinates of the light emitted from the light emitting device from being partially transformed into color coordinates different from the intended ones due to partial color deviation.

The bonding portion 130 may be positioned between the light emitting diode chip 110 and the wavelength converting portion 120 and may adhere the light emitting diode chip 110 and the wavelength converting portion 120. The bonding portion 130 may include an adhesive material, and may further include a phosphor. The adhesive material may be a general adhesive such as a polymer adhesive, a silicone adhesive, and the like.

The bonding portion 130 may be positioned between the light emitting diode chip 110 and the wavelength converting portion 120 to bond the light emitting diode chip 110 and the wavelength converting portion 120 together. Further, the bonding portion 130 may further cover at least a part of the side surface of the LED chip 110. When the area of the wavelength converter 120 is larger than the upper surface of the LED chip 110, the adhesive 130 formed on the side surface of the LED chip 110 may be inclined. At this time, the adhesive portion 130 may be formed in a shape that its width becomes narrower from the top downward due to its surface tension. The surface of the bonding portion 130 formed on the side surface of the light emitting diode chip 110 may include a flat surface and / or a concave surface.

A portion of the bonding portion 130 may be interposed between the LED chip 110 and the sidewall portion 140 when the bonding portion 130 is formed on the side surface of the LED chip 110. [ At this time, the side wall 140 covering the side surface of the light emitting diode chip 110 may be formed with an inclined surface corresponding to the inclined surface of the bonding portion 130 formed on the side surface of the LED chip 110. Accordingly, light emitted to the side surface of the LED chip 110 can be reflected by the inclined surface of the side wall 140, so that light extraction efficiency of the light emitting device can be improved. Light can be scattered by the bonding portion 130 interposed between the light emitting diode chip 110 and the side wall portion 140 or total reflection at the side portion of the light emitting diode chip 110 can be reduced, The luminous efficiency can be improved.

However, the present invention is not limited thereto, and the bonding portion 130 may extend to the lower surface of the LED chip 110, and further may contact the side surfaces of the first and second pad electrodes 113 and 115 It is possible.

The bonding portion 130 may further include a phosphor, and the phosphor may wavelength-convert the light emitted from the LED chip 110. Accordingly, in the light emitting device according to various embodiments, the light emitted from the light emitting diode chip 110 may be firstly wavelength-converted by the bonding portion 130, and then wavelength-converted by the wavelength conversion portion 120 . In this case, the wavelength of the wavelength-converted light emitted from the phosphor of the bonding portion 130 may be different from the wavelength of the wavelength-converted light by the wavelength converting portion 120, and the peak wavelength of the light converted by the phosphor of the bonding portion 130 May be longer than the peak wavelength of the light that has been wavelength-converted by the wavelength converter 120. For example, the phosphor of the bonding portion 130 may be a red phosphor, and the wavelength converting portion 120 may include at least one of a green phosphor, a cyan phosphor, and a yellow phosphor. Accordingly, the wavelength-converted light in the bonding portion 130 is wavelength-converted again by the wavelength converting portion 120, so that the light emitted from the light emitting device can be prevented from having unpredictable color coordinates.

According to the present embodiment, the light emitted from the LED chip 110 is firstly wavelength-converted by the phosphor 133 included in the bonding portion 130, and then wavelength-converted secondarily by the wavelength converter 120 . Accordingly, light emitted from the light emitting diode chip 110 is wavelength-converted in two steps, so that light having substantially uniform color coordinates can be emitted to a plurality of light emitting devices. That is, it is possible to reduce the color coordinate deviation between the plurality of light emitting devices. Further, the color coordinates of the light emitted from the light emitting device can be easily controlled by controlling the type and concentration of the phosphor included in the bonding portion 130. Particularly, even if the same wavelength conversion units are applied to a plurality of light emitting devices, the color coordinates of the light emitting devices can be easily adjusted by adjusting only the phosphors included in the bonding portion 130.

Particularly, when the wavelength converter 120 includes a single crystal or polycrystalline phosphor sheet (or plate), the single crystal or polycrystalline phosphor sheet (or plate) can not control the phosphor concentration or the like and is emitted from the wavelength converter 120 The color coordinates of the light are almost constant. At this time, the color coordinates of the light emitted from the light emitting device 10 can be easily adjusted by adjusting the type and concentration of the phosphor included in the bonding portion 130.

The side wall 140 may be positioned on the substrate 200 and may surround a side of the LED chip 110 and a part of the side of the wavelength conversion part 120. In addition, the side wall part 140 may contact at least a part of the side surface of the light-emitting diode chip 110 with a side surface of the wavelength conversion part 120. The side wall 140 can be in contact with at least a part of the first surface 121 of the wavelength conversion part 120 and at least a part of the second surface 121 is exposed without being covered with the side wall part 140. However, in some embodiments, when the bonding portion 130 completely covers the side surface of the LED chip 110, a bonding portion 130 is interposed between the side wall portion 140 and the LED chip 110, The side surface of the light emitting diode chip 110 may be in contact with the side wall portion 140 through the bonding portion 130. The side wall 140 is formed in contact with the light emitting diode chip 110 and the wavelength conversion unit 120 so that the light efficiency of the light emitting device can be improved by increasing the efficiency of light reflected by the side wall 140. In addition, the side surface of the side wall part 140 may be formed substantially parallel to the side surface of the substrate 200. Further, the side wall part 140 may further cover the upper surface and a part of the side surface of the first and second upper electrodes 221 and 231.

The sidewall portion 140 may include an insulating polymer material or ceramic, and may further include a filler capable of reflecting or scattering light. The sidewall portion 140 may have optical transparency, optical semipermeability, or light reflectivity. For example, the side wall portion 140 may include a silicone resin or a polymer resin such as an epoxy resin, a polyimide resin, a urethane resin, or the like. In this embodiment, the side wall part 140 may include a white silicone resin having light reflectivity.

The filler can be uniformly dispersed in the side wall portion 140. The filler is not limited as long as it is a material capable of reflecting or scattering light, and may be, for example, titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), zirconium oxide (ZrO 2 ) or the like. The sidewall portion 140 may include at least one of the fillers. By adjusting the type or concentration of the filler, the reflectivity of the side wall part 300, the degree of light scattering, and the like can be adjusted. In particular, if the side wall portion 140, including TiO 2, there can be improved heat transfer efficiency through the side wall portion 140 by the TiO 2 can be improved, the heat dissipation efficiency of the light emitting device. Particularly, the side wall 140 can be in contact with the first and second upper electrodes 221 and 231 so that heat transfer efficiency from the first and second upper electrodes 221 and 231 through the side wall 140 The heat radiation efficiency of the light emitting device can be improved.

Meanwhile, the upper surface 140u of the side wall part 140 may be formed to be generally flat. The wavelength conversion unit 120 of the present embodiment includes the second surface 122 at least partially exposed to the outside so that the top surface of the wavelength conversion unit 120 is positioned higher than the top surface 140u of the side wall unit 140 . However, the present invention is not limited thereto. As shown in FIG. 4, the upper surface 140ua of the side wall part 140 may be inclined. The upper surface 140ua of the sidewall portion 140 having an inclination may have a slope that decreases along the direction from the center of the light emitting device to the outside. In addition, the upper surface 140ua may include a curved surface. The upper surface 140ua of the sidewall 140 having such an inclination may be formed in the process of manufacturing the sidewall 140. [ When the sidewall 140 is formed through the application and curing of the sidewall 140, the portion of the sidewall 140 contacting the wavelength conversion portion 120 due to the surface tension in the coating process before curing Can be formed high. In addition, the portion contacting the wavelength conversion portion 120 may be formed higher due to a shrinkage phenomenon that may occur during the curing process of the side wall portion 140.

The upper surface 140ua of the side wall portion 140 is inclined downwardly in the lateral direction of the side wall portion 140 so that the upper surface 140ua of the side wall portion 140 is prevented from being deformed It is possible to prevent the light passing through the second surface 122 from being reflected by the side wall portion 140. [ Therefore, even if the sidewall portion 140 is relatively high due to process variations, it is possible to minimize the occurrence of color deviation on the light emitting surface of the light emitting device.

The structure of the light emitting device according to the above-described embodiments can be similarly applied to a case having a plurality of light emitting diode chips. 7 and 8 are a plan view and a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention. 8 is a cross-sectional view of a portion corresponding to line B-B 'in Fig. The light emitting device of this embodiment is substantially similar to the light emitting device described with reference to FIGS. 1 to 3, but differs in that it includes a plurality of light emitting diode chips 110. The light emitting device of this embodiment will be described mainly on the following differences.

7 to 8, the light emitting device includes a plurality of light emitting diode chips 110, a plurality of wavelength conversion units 120, and a side wall unit 140. Further, the light emitting device may further include a substrate 200, a bonding portion 130, and at least one protection element 150.

The light emitting device of this embodiment may include a first light emitting portion 110a and a second light emitting portion 110b including a plurality of light emitting diode chips 110. [ Light emitted from the first light emitting portion 110a and the second light emitting portion 110b may have different characteristics. For example, the light emitted from the first light emitting portion 110a has a relatively high color temperature and the light emitted from the second light emitting portion 110b has a relatively low color temperature, So that light of various color temperatures can be realized. As another example, the light emitted from the first light emitting portion 110a may have a specific color, and the light emitted from the second light emitting portion 110b may be formed as white light, . The plurality of light emitting diode chips 110 may be mutually electrically connected to each other, or independently electrically connected to each other. Further, the light emitting device may include three or more light emitting portions.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Variations and changes are possible.

Claims (20)

A substrate comprising a first upper electrode and a second upper electrode;
A light emitting diode chip disposed on the substrate and mounted on the first and second upper electrodes;
A wavelength converter disposed on the light emitting diode chip; And
A light emitting diode chip having a side surface and a side surface of the light emitting diode chip, the light emitting diode chip including a side surface of the light emitting diode chip and a side surface of the wavelength converting portion, And a side wall portion
And the distance between the first and second upper electrodes is 30 to 80 占 퐉.
The method according to claim 1,
Wherein at least one side surface of the wavelength conversion portion includes a first surface and a second surface located on the first surface, wherein an angle between the first surface and a bottom surface of the wavelength conversion portion is smaller than a surface of the second surface and the wavelength conversion portion Lt; / RTI >
And at least a part of the second surface is exposed.
The method of claim 2,
Wherein the second surface protrudes upward from the upper surface of the sidewall portion and the upper surface of the wavelength conversion portion is positioned higher than the upper surface of the sidewall portion.
The method of claim 2,
Wherein the first surface is formed perpendicular to a lower surface of the wavelength conversion portion, and the second surface is formed to have an acute angle with respect to a lower surface of the wavelength conversion portion.
The method of claim 2,
Wherein the wavelength conversion portion includes four side surfaces, and each of the four side surfaces includes the second surface.
The method of claim 2,
And the light emitting diode chip includes a first electrode pad and a second electrode pad formed at a lower portion thereof.
The method of claim 6,
Wherein the substrate further comprises a base,
Wherein the first and second upper electrodes are located on the base,
And the first and second electrode pads are electrically connected to the first and second upper electrodes, respectively.
The method of claim 6,
Wherein a distance between the first and second upper electrodes is equal to or smaller than a distance between the first and second electrode pads.
The method of claim 7,
Wherein:
A first lower electrode and a second lower electrode positioned under the base;
A first connection electrode electrically connecting the first upper electrode and the first lower electrode; And
And a second connection electrode electrically connecting the second upper electrode and the second lower electrode,
Wherein a distance between the first and second lower electrodes is larger than a distance between the first and second upper electrodes.
The method of claim 7,
And a bonding layer disposed between the first electrode pad and the first upper electrode and between the second electrode pad and the second upper electrode,
Wherein the bonding layer is formed by eutectic bonding.
The method according to claim 1,
Wherein the upper surface of the side wall portion includes an inclined surface that becomes lower toward the lateral direction of the side wall portion.
The method of claim 11,
Wherein the inclined surface includes a curved surface.
The method according to claim 1,
And a bonding portion positioned between the wavelength conversion portion and the light emitting diode chip.
14. The method of claim 13,
Wherein the adhesive portion is further extended to at least a part of a side surface of the light emitting diode chip,
And a bonding portion positioned on a side surface of the light emitting diode chip is interposed between the side wall portion and the light emitting diode chip.
15. The method of claim 14,
The portion of the bonding portion located on the side surface of the light emitting diode chip has an inclined side surface,
Wherein the inclined side surface of the adhesive portion includes a flat surface and / or a concave surface.
The method according to claim 1,
Wherein the side wall portion has a light reflective property.
18. The method of claim 16,
And the side wall portion comprises TiO 2 .
The method according to claim 1,
Wherein the wavelength converter has a horizontal area larger than a horizontal area of the light emitting diode chip.
The method according to claim 1,
Wherein the wavelength converter includes at least one of at least one green phosphor, at least one cyan phosphor, and at least one yellow phosphor.
The method of claim 19,
Wherein the bonding portion comprises at least one red phosphor.
KR1020150093623A 2015-06-30 2015-06-30 Light emitting device KR20170003229A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020188182A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device
JP2020188181A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device
JP2020188179A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020188182A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device
JP2020188181A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device
JP2020188179A (en) * 2019-05-16 2020-11-19 スタンレー電気株式会社 Light-emitting device

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