JP2020132890A - スパッタ装置 - Google Patents
スパッタ装置 Download PDFInfo
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- JP2020132890A JP2020132890A JP2019022969A JP2019022969A JP2020132890A JP 2020132890 A JP2020132890 A JP 2020132890A JP 2019022969 A JP2019022969 A JP 2019022969A JP 2019022969 A JP2019022969 A JP 2019022969A JP 2020132890 A JP2020132890 A JP 2020132890A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
図1を参照し、第1の実施形態のスパッタ装置について説明する。図1は、第1の実施形態のスパッタ装置を示す概略断面図である。
図4を参照し、第2の実施形態のスパッタ装置について説明する。図4は、第2の実施形態のスパッタ装置を示す概略断面図である。
112、212 処理容器
112i、212i ポート
124、224 ターゲット材
141、241 第1のシールド部材
142、242 第2のシールド部材
Claims (10)
- 減圧可能な処理容器の天井部に配置されたターゲット材と、
前記処理容器内にスパッタガスを導入するガス導入部と、
前記ターゲット材の周囲に配置され、前記ターゲット材の周囲への膜の堆積を防止する第1のシールド部材と、
前記処理容器内に前記天井部と間隔を空けて前記天井部の内壁を覆うように配置され、前記ターゲット材と対応する部分に開口を有する第2のシールド部材と、
を有する、
スパッタ装置。 - 前記ガス導入部は、前記ターゲット材から放出されるターゲット物質の死角となる位置に配置された吐出口を有する、
請求項1に記載のスパッタ装置。 - 前記ガス導入部は、前記ターゲット材から見たときに前記第2のシールド部材に隠れる位置に配置された吐出口を有する、
請求項2に記載のスパッタ装置。 - 前記ガス導入部は、鉛直方向に対して前記ターゲット材の方向に傾斜した方向にスパッタガスを導入する、
請求項2又は3に記載のスパッタ装置。 - 前記ガス導入部は、前記第1のシールド部材の内部に形成されたガス流路を有し、
前記ガス流路は、前記吐出口を介して前記第1のシールド部材と前記第2のシールド部材とにより形成される空間と連通する、
請求項2乃至4のいずれか一項に記載のスパッタ装置。 - 前記吐出口の開口径は、前記空間の高さよりも小さい、
請求項5に記載のスパッタ装置。 - 前記ガス流路は、一又は複数の屈曲部を有し、前記屈曲部の少なくとも1つは鋭角に屈曲する、
請求項5又は6に記載のスパッタ装置。 - 前記処理容器は、本体と、前記本体に着脱可能に取り付けられる蓋体と、を有し、
前記第1のシールド部材は、前記蓋体に設けられ、
前記第2のシールド部材は、前記本体に設けられる、
請求項1乃至7のいずれか一項に記載のスパッタ装置。 - 前記ターゲット材は、前記処理容器内に収容される基板に対して傾斜して配置される、
請求項1乃至8のいずれか一項に記載のスパッタ装置。 - 前記ターゲット材は、前記処理容器内に収容される基板に対して平行に配置される、
請求項1乃至8のいずれか一項に記載のスパッタ装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019022969A JP7257807B2 (ja) | 2019-02-12 | 2019-02-12 | スパッタ装置 |
TW109103145A TW202039899A (zh) | 2019-02-12 | 2020-02-03 | 濺鍍裝置 |
CN202010079656.2A CN111549323B (zh) | 2019-02-12 | 2020-02-04 | 溅射装置 |
KR1020200013656A KR102358937B1 (ko) | 2019-02-12 | 2020-02-05 | 스퍼터 장치 |
US16/783,282 US11149342B2 (en) | 2019-02-12 | 2020-02-06 | Sputtering apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019022969A JP7257807B2 (ja) | 2019-02-12 | 2019-02-12 | スパッタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020132890A true JP2020132890A (ja) | 2020-08-31 |
JP7257807B2 JP7257807B2 (ja) | 2023-04-14 |
Family
ID=71944561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019022969A Active JP7257807B2 (ja) | 2019-02-12 | 2019-02-12 | スパッタ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11149342B2 (ja) |
JP (1) | JP7257807B2 (ja) |
KR (1) | KR102358937B1 (ja) |
CN (1) | CN111549323B (ja) |
TW (1) | TW202039899A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11578402B2 (en) * | 2021-05-26 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Film forming apparatus and method for reducing arcing |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158416A (ja) * | 2007-12-27 | 2009-07-16 | Ulvac Japan Ltd | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン2次電池の製造方法 |
WO2013136387A1 (ja) * | 2012-03-14 | 2013-09-19 | キヤノンアネルバ株式会社 | スパッタ装置 |
WO2013145050A1 (ja) * | 2012-03-30 | 2013-10-03 | キヤノンアネルバ株式会社 | プラズマ処理装置および基板処理システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472259A (en) * | 1981-10-29 | 1984-09-18 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US6946054B2 (en) * | 2002-02-22 | 2005-09-20 | Tokyo Electron Limited | Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing |
US6853142B2 (en) | 2002-11-04 | 2005-02-08 | Zond, Inc. | Methods and apparatus for generating high-density plasma |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
JP5395255B2 (ja) | 2010-03-24 | 2014-01-22 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法およびスパッタリング方法 |
CN103924206B (zh) * | 2010-03-26 | 2017-01-04 | 佳能安内华股份有限公司 | 一种溅射设备 |
US9695502B2 (en) * | 2012-03-30 | 2017-07-04 | Applied Materials, Inc. | Process kit with plasma-limiting gap |
KR20150006459A (ko) * | 2013-02-05 | 2015-01-16 | 캐논 아네르바 가부시키가이샤 | 성막 장치 |
-
2019
- 2019-02-12 JP JP2019022969A patent/JP7257807B2/ja active Active
-
2020
- 2020-02-03 TW TW109103145A patent/TW202039899A/zh unknown
- 2020-02-04 CN CN202010079656.2A patent/CN111549323B/zh active Active
- 2020-02-05 KR KR1020200013656A patent/KR102358937B1/ko active IP Right Grant
- 2020-02-06 US US16/783,282 patent/US11149342B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158416A (ja) * | 2007-12-27 | 2009-07-16 | Ulvac Japan Ltd | 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン2次電池の製造方法 |
WO2013136387A1 (ja) * | 2012-03-14 | 2013-09-19 | キヤノンアネルバ株式会社 | スパッタ装置 |
WO2013145050A1 (ja) * | 2012-03-30 | 2013-10-03 | キヤノンアネルバ株式会社 | プラズマ処理装置および基板処理システム |
Also Published As
Publication number | Publication date |
---|---|
KR20200098406A (ko) | 2020-08-20 |
KR102358937B1 (ko) | 2022-02-04 |
CN111549323B (zh) | 2022-06-24 |
US11149342B2 (en) | 2021-10-19 |
JP7257807B2 (ja) | 2023-04-14 |
CN111549323A (zh) | 2020-08-18 |
US20200255935A1 (en) | 2020-08-13 |
TW202039899A (zh) | 2020-11-01 |
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