JP2020126989A - Semiconductor laser light source device - Google Patents

Abstract

To provide a semiconductor laser light source device having a plurality of semiconductor laser elements and capable of realizing both high density and high heat dissipation.SOLUTION: A semiconductor laser light source device includes a stem including a first through hole reaching a second surface from a first surface, a first heat sink at least a part of which is fitted in the first through hole and which is made of a material having a higher thermal conductivity than the stem, a plurality of submounts arranged in a second direction on the surface in a region exposed on the first surface side of the first through hole of the first heat sink, a plurality of semiconductor laser elements arranged on the respective surfaces of the submounts, and a bonding material interposed between the inner wall of the stem and the outer wall of the first heat sink in the first through hole. The first heat sink has a first region fixed to the stem by the bonding material at the position on the first surface side and a second region not fixed to the stem at the position on the second surface side.SELECTED DRAWING: Figure 5B

Description

The present invention relates to a semiconductor laser light source device.

Currently, a semiconductor laser light source device in which a semiconductor laser element is housed in a package called a CAN package is put into practical use (for example, see Patent Document 1). FIG. 23 is a drawing schematically showing the structure of a conventional CAN package type semiconductor laser light source device disclosed in Patent Document 1 described above.

As shown in FIG. 23, a conventional semiconductor laser light source device 100 includes a stem 101, a heat sink 102 formed to project on the surface of the stem 101, a submount 103 mounted on the surface of the heat sink 102, A semiconductor laser element 104 mounted on the surface of the submount 103 is provided. The power supply pin 105 is arranged so as to pass through a through hole provided in the stem 101, and supplies power to the semiconductor laser element 104 via the submount 103.

The cap 110 has a cylindrical shape and is fixed while being covered with the stem 101 for airtightness. The cap 110 is provided with a window 110a, and the light emitted from the semiconductor laser element 104 is extracted to the outside through the window 110a.

JP, 2017-130385, A

The power supply pin 105 is inserted into the through hole of the stem 101 via a low melting point glass as an insulating material. The cap 110 is generally fixed to the stem 101 by resistance welding.

From this point of view, the stem 101 is required to be a material that has a hardness that is high enough to withstand the pressure of resistance welding and that exhibits a thermal expansion coefficient close to that of low-melting glass. From this viewpoint, an iron alloy such as Fe (iron) or Kovar is generally used for the stem 101. However, since Fe is not a material having a sufficiently high thermal conductivity, the heat generated when the semiconductor laser element 104 emits light cannot be efficiently exhausted. From this point of view, as shown in FIG. 23, a heat sink 102 made of a material having a thermal conductivity higher than that of Fe is arranged separately from the stem 101, and a semiconductor laser device is provided on the surface of the heat sink 102 via a submount 103. 104 is attached.

The heat sink 102 is generally made of a material such as Cu (copper), which has a higher thermal conductivity than Fe and is available at a relatively low cost. The heat sink 102 and the stem 101 are joined via a metal brazing material such as silver brazing.

By the way, in recent years, the market demand for high-brightness semiconductor laser light source devices is increasing. The present inventors have studied increasing the brightness by arranging a plurality of semiconductor laser elements 104 in a conventional CAN package type semiconductor laser light source device 100 as shown in FIG.

However, the semiconductor laser light source device 100 configured by arranging the plurality of semiconductor laser elements 104 in a narrow range has a problem of heat exhaustion as compared with the conventional semiconductor laser light source device 100 including the single semiconductor laser element 104. Is important. As a result of earnest studies by the present inventors, when a plurality of semiconductor laser devices 104 are simply arranged with the structure of the conventional semiconductor laser light source device 100 as shown in FIG. However, it has been found that there is a risk that the output of the semiconductor laser element 104 may be reduced, the wavelength of the emitted light may be changed, or the life may be shortened.

In view of the above problems, it is an object of the present invention to provide a semiconductor laser light source device that includes a plurality of semiconductor laser elements and that can achieve both high density and high heat dissipation.

The semiconductor laser light source device according to the present invention,
A first surface, a second surface located in a first direction with respect to the first surface, and a first through hole that is formed in a partial region and reaches the second surface from the first surface, A stem made of metal material,
At least a part is arranged so as to fit in the first through hole, a first heat sink composed of a second metal material having a higher thermal conductivity than the first metal material,
On the surface of the first heat sink in the region exposed to the first surface side of the first through hole, a plurality of submounts arranged along a second direction orthogonal to the first direction, and
A plurality of semiconductor laser devices arranged on the respective surfaces of the plurality of submounts,
In the first through hole, having a bonding material interposed between the inner wall of the stem and the outer wall of the first heat sink,
The first heat sink has a first region fixed to the stem by the bonding material at a position on the first surface side, and a second region not fixed to the stem at a position on the second surface side. It is characterized by having.

For example, in the conventional CAN package type semiconductor laser light source device 100 as shown in FIG. 23, when considering arranging a plurality of semiconductor laser elements 104, it is necessary to enlarge the heat sink 102 in order to secure heat dissipation. There is. According to the earnest studies by the present inventors, it has been found that when the large heat sink 102 and the stem 101 are joined with a metal brazing material such as silver brazing, the heat sink 102 is likely to warp with the semiconductor laser element 104 side being convex. .. Here, for convenience of description, the direction in which the semiconductor laser device 104 is arranged as viewed from the stem 101 is called “up”, and the opposite direction is called “down”. When described in accordance with this name, the present inventors have made earnest studies and found that the heat sink 102 is likely to warp upwardly.

In order to secure further heat dissipation, air cooling such as fins is performed on the surface of the stem 101 opposite to the semiconductor laser device 104, that is, the lower surface, directly or through a base such as aluminum die casting. A method of arranging a cooling member including a member or a water cooling member such as a drain pipe can be considered. However, as described above, when the heat sink 102 is warped upward, the cooling member and the heat sink 102 cannot be brought into surface contact with each other, and high heat dissipation cannot be ensured.

On the other hand, according to the semiconductor laser light source device of the present invention, the first heat sink is fixed to the stem on the first surface side (upper side) by the bonding material, while on the second surface side (lower side). Not fixed to the stem. As a result, the stem tends to warp downward due to the step of joining the stem and the first heat sink. Thereby, when a cooling member such as an air cooling member or a water cooling member (corresponding to “second heat sink” in the present specification) is brought into contact with the second surface side of the stem, the stem along the downward convex shape is By pressing the stem from the first surface side toward the second surface side (downward), it becomes easy to bring the first heat sink into surface contact with the second heat sink. As a result, high heat dissipation can be secured. Details will be described later in the section “Detailed Description of the Invention”.

As the joining material, a metal brazing material such as silver brazing material, a metal eutectic solder material, a metal adhesive, or the like can be used.

The first heat sink may project outward from the first through hole more than the second surface in the first direction.

Since the first heat sink projects from the first through hole to the outside of the second surface, even if the first heat sink has an upwardly convex shape, a state where it does not contact the second heat sink is avoided. .. In particular, as described above, since the stem has a shape that is likely to warp downwardly, the first heat sink protruding further below the stem can be fixed by pressing the stem downward against the second heat sink. The shape is such that it is easy to come into surface contact with the second heat sink. As a result, high heat dissipation is secured.

The bonding material may be formed only in the region on the first surface side in the first through hole.

Thereby, the first heat sink has the first region fixed to the stem on the first surface side of the stem and the second region not fixed to the stem on the second surface side of the stem.

The semiconductor laser light source device,
A second heat sink arranged to contact the second region of the first heat sink;
It may have a pressing member for fixing the second heat sink and the stem.

The second heat sink can be a cooling member including an air cooling member such as fins or a water cooling member such as a drain pipe. The second heat sink may include the cooling member alone, or may include a base connected to the cooling member.

The plurality of submounts are arranged on a surface of the first heat sink that is non-parallel to the first surface,
The plurality of semiconductor laser elements may be arranged on the surfaces of the plurality of submounts so as to emit light in the first direction, respectively.

The semiconductor laser light source device has a mirror arranged on the surface of the first heat sink,
The plurality of submounts are arranged on a surface parallel to the first surface of the surfaces of the first heat sink,
The plurality of semiconductor laser elements are arranged on the surface of the plurality of submounts so as to emit light in a third direction orthogonal to both the first direction and the second direction,
The mirror may convert a traveling direction of light emitted from the plurality of semiconductor laser elements toward the third direction into the first direction.

The first metal material is one or more materials selected from the group consisting of iron and iron alloys,
The second metal material may be one or more materials selected from the group consisting of copper and copper alloys.

According to the semiconductor laser light source device of the present invention, a plurality of semiconductor laser elements are provided, and it is possible to realize both high density and high heat dissipation.

It is a perspective view which shows typically the structure of 1st embodiment of a semiconductor laser light source device. 2 is a view in which a cap and a mirror are omitted from FIG. 1. It is a schematic plan view showing the structure of the stem. FIG. 2 is a schematic plan view of the semiconductor laser light source device shown in FIG. 1 when viewed from the Z direction. It is the A1-A1 sectional view taken on the line in FIG. It is the A1-A1 sectional view taken on the line in FIG. It is sectional drawing which shows typically the structure of 1st embodiment of the semiconductor laser light source device containing a 2nd heat sink. 7 is a schematic view of the semiconductor laser light source device shown in FIG. 6 when viewed from the Z direction. It is drawing which illustrates typically the stress applied to a 1st heat sink and a stem at the time of a joining process. It is drawing which shows typically an example of the method of fixing a 1st heat sink and a stem with respect to a 2nd heat sink. FIG. 5 is a schematic plan view of another embodiment of the semiconductor laser light source device shown in FIG. 1 when viewed from the Z direction, which is shown in accordance with FIG. 4. It is a perspective view which shows typically the structure of 2nd embodiment of a semiconductor laser light source device. 12 is a view in which the cap is omitted from FIG. 11. FIG. 12 is a schematic plan view of the semiconductor laser light source device shown in FIG. 11 when viewed from the Z direction. It is the A1-A1 sectional view taken on the line in FIG. It is a perspective view which shows typically the structure of 3rd embodiment of a semiconductor laser light source device. 16 is a drawing in which the cap is omitted from FIG. 15. FIG. 16 is a schematic cross-sectional view of the semiconductor laser light source device shown in FIG. 15. It is sectional drawing which shows typically the structure of 3rd embodiment of the semiconductor laser light source device containing a 2nd heat sink. It is a perspective view which shows typically the structure of 4th embodiment of a semiconductor laser light source device. 20 is a drawing in which the cap is omitted from FIG. 19. 20 is a schematic cross-sectional view of the semiconductor laser light source device shown in FIG. 19. It is a top view which shows typically the structure of the stem with which the semiconductor laser light source device of another embodiment is equipped. It is drawing which shows typically the structure of the conventional CAN package type semiconductor laser light source device.

An embodiment of a semiconductor laser light source device according to the present invention will be described with reference to the drawings. The following drawings are shown schematically, and the dimensional ratios in the drawings do not always match the actual dimensional ratios. In addition, the dimensional ratios do not always match between the drawings.

[First embodiment]
A first embodiment of a semiconductor laser light source device according to the present invention will be described. FIG. 1 is a perspective view schematically showing the structure of the semiconductor laser light source device of this embodiment. It should be noted that FIG. 1 is illustrated in a state in which a part of a cap 10 to be described later is cut from the viewpoint of easy understanding.

In the following description, the XYZ coordinate system described in FIG. 1 and the like will be appropriately referred to.

As shown in FIG. 1, a semiconductor laser light source device 1 includes a plurality of semiconductor laser elements 2 arranged in the X direction, a submount 3 on which the semiconductor laser elements 2 are mounted, and a submount 3 on the surface. And a stem 5 connected to the first heat sink 4.

The semiconductor laser device 2 includes a substrate and multiple semiconductor layers stacked on the substrate, and emits laser light L2 having a wavelength determined according to the constituent material of the semiconductor layer. For example, when the semiconductor layer includes an active layer made of InGaP or InGaAlP, the semiconductor laser element 2 emits so-called red laser light L2 having a wavelength of 600 nm to 800 nm. However, in the present invention, the wavelength of the laser light L2 emitted from the semiconductor laser light source device 1 is not limited.

In the example of the present embodiment, as shown in FIG. 1, the semiconductor laser elements 2 are arranged so as to be aligned in the X direction on the XY plane. The semiconductor laser light source device 1 has a mirror 12 for converting the traveling direction of the laser light L2 emitted from each semiconductor laser element 2 in the Y direction into the Z direction. The laser light L2 whose traveling direction is changed by the mirror 12 is extracted to the outside of the semiconductor laser light source device 1 through the window 10a provided in the cap 10.

The cap 10 is provided for the purpose of protecting the semiconductor laser element 2 by making the inside airtight, and is joined to the stem 5 by a method such as resistance welding.

In this specification, the Z direction corresponds to the “first direction”, the X direction corresponds to the “second direction”, and the Y direction corresponds to the “third direction”.

The submount 3 is provided with, for example, an electrode wiring (not shown) on its surface to form an electrical connection for supplying power to the semiconductor laser element 2. The submount 3 also has a function of guiding the heat generated when the semiconductor laser element 2 emits light to the first heat sink 4 side. The material of the submount 3 is appropriately selected in consideration of heat dissipation, insulation, difference in linear expansion coefficient with the semiconductor laser element 2, and the like. As an example, the submount 3 is made of a material such as AlN, Al ₂ O ₃ , SiC, CuW.

In the present embodiment, each submount 3 is placed on a plane parallel to the XY plane of the first heat sink 4. 2 is a view in which the cap 10 and the mirror 12 are omitted from FIG. 1 for easy understanding.

The stem 5 has a first surface 5a and a second surface 5b at a position facing the first surface 5a in the Z direction. As shown in FIG. 3, the stem 5 has a first through hole 21 and a second through hole 22 penetrating in the Z direction from the first surface 5a to the second surface 5b. FIG. 3 is a schematic plan view of the stem 5 when viewed from the Z direction. As shown in FIG. 3, in the example of the present embodiment, the stem 5 has one first through hole 21 and two second through holes (22, 22).

As described above, in the stem 5, the cap 10 is joined to the first surface 5a by a method such as resistance welding. Therefore, the stem 5 is made of a material that can be resistance-welded, and is made of, for example, iron or an iron alloy.

In the present embodiment, the first through holes 21 are formed on the surface of the stem 5 at positions asymmetric with respect to the Y direction. That is, the stem 5 has a wide region (first portion 51) and a narrow region (second portion 52) at a position outside the first through hole 21 in the Y direction. Then, in the first portion 51 of the stem 5, second through holes 22 are formed at two positions separated in the X direction.

The first through hole 21 is a hole for fitting the first heat sink 4. As shown in FIGS. 1 and 2, the first heat sink 4 is arranged so as to be fitted in the first through hole 21 in the Z direction. In the present embodiment, the submount 3 and the semiconductor laser element 2 are placed on the surface of the first heat sink 4 exposed on the first surface 5a side of the stem 5 of the first through hole 21.

The first heat sink 4 has a function of discharging heat generated when the semiconductor laser element 2 emits light. Therefore, the first heat sink 4 is preferably made of a material having a high thermal conductivity. More specifically, the first heat sink 4 is made of a material having a higher thermal conductivity than the stem 5, and is made of, for example, copper or a copper alloy.

As shown in FIG. 2, in the present embodiment, the first heat sink 4 is arranged so as to project from the second surface 5b of the stem 5 by a length d4 in the Z direction.

The second through holes (22, 22) provided at two locations are holes for inserting the power supply pins 7. The power supply pin 7 is made of a conductive material such as an iron alloy such as Kovar. More specifically, a hollow (cylindrical) insulating member 13 such as low-melting glass is fitted into the second through hole 22, and the power supply pin 7 is inserted inside the insulating member 13. Thus, the insulation between the power supply pin 7 and the stem 5 is secured. The power supply pin 7 is electrically connected to a power supply substrate 15 described later at a position on the second surface 5b side of the stem 5, and electrically connected to the semiconductor laser element 2 at a position on the first surface 5a side. As a result, power is supplied from the power supply board 15 to the semiconductor laser element 2 via the power supply pin 7.

The first heat sink 4 and the stem 5 are joined by the joining material 6 in the first through hole 21. As the bonding material 6, a metal brazing material such as silver brazing material, a metal eutectic solder material, or a metal adhesive material can be used.

In the present embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 on the first surface 5a side of the stem 5, but is not joined to the stem 5 on the second surface 5b side. This point will be described with reference to FIGS. 4, 5A and 5B. FIG. 4 is a schematic plan view of the semiconductor laser light source device 1 shown in FIG. 1 when viewed from the Z direction. 5A and 5B are sectional views taken along the line A1-A1 in FIG. 4, but the notation is different for convenience of description. For easy understanding, the sizes of some members are exaggerated in FIGS. 5A and 5B.

As described above, the first heat sink 4 fitted in the first through hole 21 formed in the stem 5 is joined to the stem 5 by the joining material 6 in the first through hole 21. Further, the power supply pin 7 arranged so as to penetrate through the second through hole 22 is ensured to have insulation with the stem 5 by the insulating member 13 such as low melting point glass. In the example of the present embodiment, the Z-direction length d4 of the first heat sink 4 exposed on the second surface 5b side of the stem 5 is equal to the power supply pin exposed on the second surface 5b side of the stem 5. It is longer than the length d7 of 7.

As shown in FIGS. 5A and 5B, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 5B, the first heat sink 4 has a first region 4a fixed to the stem 5 by the bonding material 6 and a second region 4b not fixed to the stem 5 in the Z direction. Have.

FIG. 6 is a cross-sectional view schematically showing the structure of the semiconductor laser light source device 1, and further shows the second heat sink 31 and the power feeding substrate 15 as compared with FIGS. 5A and 5B. The power supply board 15 is a board on which a circuit element (not shown) for controlling power supply to the semiconductor laser element 2 is mounted. Note that FIG. 6 shows a wire 18 for electrically connecting the power feeding pin 7 and the semiconductor laser element 2.

As described above, the first heat sink 4 has a function of discharging heat generated by the semiconductor laser device 2. From the viewpoint of further enhancing the effect of exhausting heat, it is preferable to bring the first heat sink 4 into contact with the second heat sink 31 including an air cooling member or a water cooling member. Here, as described above, since the first heat sink 4 has the second region 4b that is not joined to the stem 5 in the Z direction, the first heat sink 4 and the stem 5 are joined together by using the joining material 6. Even if the first heat sink 4 is deformed, the surface contact with the second heat sink 31 can be easily ensured by passing through the heating and cooling steps at the time of joining. This point will be described later.

Further, according to the semiconductor laser light source device 1 of the present embodiment, the first heat sink 4 is arranged so as to further project from the power supply pin 7 in the Z direction. As a result, as shown in FIG. 6, the power supply board 15 can be arranged at a position between the second surface 5b of the stem 5 and the second heat sink 31.

FIG. 7 is a schematic plan view of the semiconductor laser light source device 1 including the power supply substrate 15 when viewed in the Z direction. As shown in FIGS. 6 and 7, the power supply board 15 is arranged on the second surface 5b side of the stem 5 so as to extend in the X direction. The power supply pin 7 is electrically connected to the power supply board 15 by a solder material 16, for example.

According to such a configuration, since the feeding pin 7 has a shorter projecting length in the Z direction than the first heat sink 4, the feeding pin 7 is directly provided without a base such as an aluminum die cast for disposing the feeding substrate 15. The first heat sink 4 can be brought into contact with the second heat sink 31. Since a base such as an aluminum die cast has a lower thermal conductivity than the second heat sink 31, this structure further enhances heat dissipation.

Furthermore, the first heat sink 4 has a shape having a certain extent in a direction parallel to the XY plane, and is fitted into the first through hole 21 while having this extent. This makes it possible to secure a large cross-sectional area of the first heat sink 4 used as the exhaust heat path, so that the exhaust heat efficiency is improved.

FIG. 8 is a diagram schematically illustrating the stress applied to the first heat sink 4 and the stem 5 through the step of joining the first heat sink 4 and the stem 5 using the joining material 6.

A bonding material 6 made of metal brazing or the like is provided on the inner wall of the first through hole 21 formed in the stem 5, and the first heat sink 4 is fitted inside the bonding material 6. After that, by being heated to a temperature higher than the melting point of the metal wax (for example, about 800° C.), the melted bonding material 6 adheres to the outer wall of the first heat sink 4 located in the first through hole 21. Then, the bonding material 6 is solidified by cooling to room temperature, whereby the first heat sink 4 and the stem 5 are fixed.

In FIG. 8, (a) is a drawing showing the state of the first heat sink 4 and the stem 5 before heating. Further, (b) is a drawing schematically showing the stress generated on the first heat sink 4 and the stem 5 in a state in which after heating, the temperature is cooled to room temperature. In FIG. 8B, the direction of force is indicated by the direction of the arrow, and the magnitude of the force is indicated by the length of the arrow.

By being heated, the first heat sink 4 and the stem 5 expand. Here, when the first heat sink 4 is made of Cu (copper) and the stem 5 is made of Fe (iron), the thermal expansion coefficient of the first heat sink 4 is larger than that of the stem 5. For this reason, at the time of cooling, a force that tends to contract more than the stem 5 acts on the first heat sink 4.

Here, as described above, the first heat sink 4 is fixed to the stem 5 with the bonding material 6 on the first surface 5a side of the stem 5. Therefore, the region (first region 4a) of the first heat sink 4 close to the first surface 5a side of the stem 5 is resisted by the stem 5 fixed by the bonding material 6 against the force of contracting. .. As a result, the first region 4a of the first heat sink 4 receives tensile stress (Sr1a, Sr2a) from the stem 5 toward the outside.

On the other hand, the first heat sink 4 is not fixed to the stem 5 with the bonding material 6 on the second surface 5b side of the stem 5. Therefore, the second region 4b of the first heat sink 4 receives the tensile stress from the stem 5 and the force (Sr3a, Sr4a) that tries to contract acts.

On the contrary, with respect to the stem 5, in a region near the first surface 5a, a force to shrink the first heat sink 4 acts, so that the stem 5 receives a tensile stress (Sr1b, Sr2b) toward the inside. On the other hand, in the region close to the second surface 5b, since the bonding material 6 is not fixed to the first heat sink 4, the force (Sr3b, Sr4b) that tries to contract without receiving the tensile stress from the first heat sink 4. Works. However, since the constituent material of the stem 5 has a lower thermal expansion coefficient than the constituent material of the first heat sink 4, the contracting force (Sr3b) of the stem 5 is larger than the contracting force (Sr3a, Sr4a) of the first heat sink 4. , Sr4b) is small.

That is, the first heat sink 4 has a force (Sr1a, Sr2a) that is pulled outward on the first surface 5a side of the stem 5, and contracts inward (Sr3a, Sr4a) on the second surface 5b side of the stem 5. ) Works. As a result, the first heat sink 4 is likely to warp in a shape in which the first surface 5a side of the stem 5, that is, the +Z direction is convex.

On the contrary, in the stem 5, stresses (Sr1b, Sr2b) that are pulled inward act on the first surface 5a side, and forces (Sr3b, Sr4b) that try to contract outward act on the second surface 5b side. As a result, the stem 5 tends to warp to the second surface 5b side, that is, the shape in which the −Z direction is convex.

As a result, as schematically shown in FIG. 9, the stem 5 curved in a convex shape in the −Z direction is pressed in the −Z direction via the pressing member 33 (external force P1), whereby the first heat sink 4 is pressed. Is easily brought into surface contact with the second heat sink 31. Thereby, the heat generated in the semiconductor laser element 2 can be efficiently discharged through the path Th2. FIG. 9 is a drawing schematically showing an example of a method of fixing the first heat sink 4 and the stem 5 to the second heat sink 31. However, for convenience of explanation, the shape such as the warp is extremely exaggerated.

As the pressing member 33, for example, aluminum, aluminum alloy, or iron alloy can be used. Further, when the warp of the stem 5 is large, a spacer 35 may be provided between the stem 5 and the second heat sink 31, as shown in FIG. For the spacer 35, for example, copper, copper alloy, aluminum, aluminum alloy, iron alloy can be used.

Further, as shown in FIG. 4, it is preferable that the semiconductor laser element 2 is arranged on the surface of the first heat sink 4 on the side closer to the first portion 51 of the stem 5. The first portion 51 having a longer length in the Y direction has a larger tensile stress generated during cooling than the second portion 52 having a shorter length in the Y direction than the first portion 51. That is, in FIG. 8, the stress Sr1a is larger than the stress Sr2a. As a result, after the cooling step, the side closer to the first portion 51 of the first heat sink 4 is further displaced in the −Z direction (the amount of warpage in the Z direction described above increases). Therefore, by disposing the semiconductor laser element 2 near such a region, the distance between the semiconductor laser element 2 and the second heat sink 31 is shortened, so that the side on which the semiconductor laser element 2 serving as a heat source is disposed is surely the second heat sink 31. And the heat exhaustion effect is further enhanced.

In the above embodiment, the structure in which the second through hole 22 is arranged at the same coordinate position as the semiconductor laser element 2 in the X direction has been described as an example. That is, the structure in which the power supply pin 7 penetrating the second through hole 22 is arranged at the same coordinate position as that of the semiconductor laser element 2 has been described as an example. However, as shown in FIG. 10, the power supply pin 7 (and the second through hole 22 into which the power supply pin 7 is inserted) is not necessarily arranged at the same coordinate position as the semiconductor laser element 2 in the X direction. I don't mind. The same applies to each of the following embodiments.

[Second embodiment]
The second embodiment of the semiconductor laser light source device according to the present invention will be described focusing on the points different from the first embodiment.

FIG. 11 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and is shown in a state in which a part of the cap 10 is cut, as in FIG. FIG. 12 is a drawing in which the cap 10 is omitted from FIG. 11. FIG. 13 is a schematic plan view of the semiconductor laser light source device 1 shown in FIG. 11 when viewed from the Z direction. 14 is a cross-sectional view taken along the line A2-A2 in FIG. 13, which is illustrated according to the notation method of FIG. 5B.

In the present embodiment, unlike the first embodiment, the semiconductor laser light source device 1 does not include the mirror 12. Each semiconductor laser element 2 and each submount 3 are arranged on the surface of the first heat sink 4 that is not parallel to the first surface 5a of the stem 5 (here, the surface parallel to the XZ plane). .. The semiconductor laser elements 2 and the submounts 3 are common to the first embodiment in that they are arranged in the X direction.

Each semiconductor laser element 2 is arranged so as to emit a laser beam L2 in the Z direction. As a result, the laser light L2 is extracted to the outside of the semiconductor laser light source device 1 via the window 10a provided in the cap 10.

As shown in FIG. 14, also in the present embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 14, the first heat sink 4 has a first region 4a fixed to the stem 5 by the bonding material 6 and a second region 4b not fixed to the stem 5 in the Z direction. Have. As a result, like the semiconductor laser light source device 1 of the first embodiment, the first heat sink 4 can be easily brought into surface contact with the second heat sink 31 (see FIG. 6), and the heat dissipation can be improved.

Further, similarly to the first embodiment, the Z-direction length d4 of the first heat sink 4 exposed on the second surface 5b side of the stem 5 is fed to the stem 5 on the second surface 5b side. The pin 7 may be longer than the length d7. According to this configuration, as described above with reference to FIG. 6, the first heat sink 4 is directly attached to the second heat sink 31 without using a base such as an aluminum die-cast for disposing the power supply board 15. Since they can be brought into contact with each other, the heat exhausting property is improved.

[Third embodiment]
The third embodiment of the semiconductor laser light source device according to the present invention will be described focusing on the points different from the above embodiments.

FIG. 15 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and is shown in a state in which a part of the cap 10 is cut, as in FIG. In the semiconductor laser light source device 1 of the present embodiment, the length by which the feeding pin 7 projects in the Z direction from the second surface 5b of the stem 5 is longer than the projecting length of the first heat sink 4 as compared with the first embodiment. Only the points differ.

16 is a drawing in which the cap 10 and the mirror 12 are omitted from FIG. The plan view of the semiconductor laser light source device 1 of the present embodiment is common to the plan view of the semiconductor laser light source device 1 of the first embodiment shown in FIG. FIG. 17 is a schematic plan view of the semiconductor laser light source device 1 of the present embodiment taken along the line A1-A1 in FIG. 4, and is shown according to the notation method of FIG. 5B. ..

In the semiconductor laser light source device 1 of the present embodiment, the length of the feeding pin 7 protruding from the second surface 5b side of the stem 5 in the Z direction is long. Therefore, as described above in the first and second embodiments, the power supply board 15 is located at a position between the end surface of the first heat sink 4 in the −Z direction and the second surface 5b of the stem 5 in the Z direction. Can not be placed. For this reason, in the semiconductor laser light source device 1, as shown in FIG. 18, for example, a base 37 made of aluminum die casting or the like for disposing the power supply board 15 is provided, and the power supply board 15 is attached to the base 37. be able to. The base 37 may be provided with a recess 37a for disposing the power supply pin 7 and the power supply board 15.

In such a configuration, the second heat sink 31 is arranged so as to come into contact with the −Z side surface of the base 37.

Also in this embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 17, the first heat sink 4 has a first region 4a fixed to the stem 5 by the bonding material 6 and a second region 4b not fixed to the stem 5 in the Z direction. Have. This facilitates the surface contact of the first heat sink 4 with the base 37. Since the base 37 has a lower thermal conductivity than the second heat sink 31, the heat dissipation property is lower than that of the semiconductor laser light source device 1 of the first embodiment. However, if the contact area between the first heat sink 4 and the base 37 is reduced, the heat exhausting property is further reduced. That is, even in the case where the feeding pin 7 has a long projecting length and the base 37 is provided as in the present embodiment, the first heat sink 4 has the stem 5 on the first surface 5a side, and the bonding material 6 is used. By fixing with respect to the stem 5 and not fixing with respect to the stem 5 without providing the bonding material 6 on the second surface 5b side of the stem 5, the heat exhausting property is enhanced.

[Fourth Embodiment]
The fourth embodiment of the semiconductor laser light source device according to the present invention will be described focusing on the points different from the above embodiments.

FIG. 19 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment, and is shown in the state where a part of the cap 10 is cut, similarly to FIG. In the semiconductor laser light source device 1 of the present embodiment, the length by which the power feeding pin 7 projects in the Z direction from the second surface 5b of the stem 5 is longer than the projecting length of the first heat sink 4 in comparison with the second embodiment. Only the points differ.

20 is a drawing in which the cap 10 is omitted from FIG. The plan view of the semiconductor laser light source device 1 of the present embodiment is the same as the plan view of the semiconductor laser light source device 1 of the second embodiment shown in FIG. FIG. 21 is a schematic plan view of the semiconductor laser light source device 1 according to the present embodiment taken along the line A2-A2 in FIG. 13, which is illustrated according to the notation method of FIG. 5B. ..

Also in the present embodiment, as in the third embodiment, since the length of the power supply pin 7 protruding from the second surface 5b side of the stem 5 in the Z direction is long, the power supply board 15 is provided in the same manner as in the third embodiment. It is possible to provide a base 37 made of aluminum die cast or the like for arrangement, and attach the power supply board 15 to the base 37.

Also in this embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 21, the first heat sink 4 has a first region 4a fixed to the stem 5 by the bonding material 6 and a second region 4b not fixed to the stem 5 in the Z direction. Have. As a result, the first heat sink 4 is easily brought into surface contact with the base 37, and the heat dissipation is improved.

[Another embodiment]
Hereinafter, another embodiment will be described.

<1> In the above embodiment, the configuration in which the bonding material 6 is provided only in the first through hole 21 on the first surface 5a side of the stem 5 has been described. However, in the configuration in which the first heat sink 4 largely protrudes in the Z direction with respect to the second surface 5b of the stem 5 as in the first embodiment and the second embodiment, regarding the protruding region, One heat sink 4 is not fixed to the stem 5. Therefore, in such a configuration, even if the bonding material 6 is provided in the first through-hole 21 in the Z direction as a whole, in the cooling step after heating, as shown in FIG. A stress similar to that described with reference to FIG.

That is, under such a configuration, as in the above-described embodiment, the stem 5 is convex on the −Z side and warps, so that the first heat sink 4 is easily brought into surface contact with the second heat sink 31, and the heat exhausting property is improved. Is improved.

<2> In the above embodiment, the first through hole 21 is described as being formed on the surface of the stem 5 at an asymmetric position in the Y direction. However, in the present invention, the first through hole 21 may be formed at a position symmetrical with respect to the Y direction on the surface of the stem 5. That is, the first portion 51 and the second portion 52 may have the same width in the Y direction. In this case, the two second through holes 22 may be provided on either side of the first portion 51 and the second portion 52.

<3> In the above embodiment, the two second through holes 22 are described as being provided outside the first through hole 21 in the Y direction. However, as shown in FIG. 22, the two second through holes 22 may be provided outside the first through hole 21 in the X direction.

<4> In the above embodiment, regarding the installation position of the semiconductor laser element 2 on the surface of the first heat sink 4, it is assumed that the position is close to the wide first portion 51 of the stem 5 in the Y direction. explained. However, in the present invention, the installation position of the semiconductor laser element 2 on the surface of the first heat sink 4 is not limited to the above contents. For example, in each of the above-described embodiments, the semiconductor laser element 2 is arranged on the surface of the first heat sink 4 at a position close to the second portion 52 of the stem 5 having a narrow width in the Y direction. It does not matter as a thing.

<5> In the first and second embodiments, the semiconductor laser light source device 1 is configured such that the power supply substrate 15 is provided on the second surface 5b side of the stem 5 and the first heat sink 4 is brought into direct contact with the second heat sink 31. It was described as being. However, also in these embodiments, as described in the third and fourth embodiments, the semiconductor laser light source device 1 includes the base 37 on which the power supply board 15 is installed, and the first heat sink 4 is the base. The configuration may be such that the second heat sink 31 is brought into contact with the table 37.

<6> In the above embodiment, the description has been made assuming that the second through holes 22 provided in the stem 5 are two places, but the second through holes 22 may be formed in three or more places.

<7> In the above embodiment, the case where the semiconductor laser elements 2 are arranged in a line in the X direction has been described, but they may be arranged in a matrix in the X direction and the Y direction.

1: semiconductor laser light source device 2: semiconductor laser element 3: submount 4: first heat sink 4a: first region of first heat sink 4b: second region of first heat sink 5: stem 5a: first surface of stem 5b: Second surface of stem 6: Bonding material 7: Power supply pin 10: Cap 10a: Window part 12: Mirror 13: Insulating member 15: Power supply board 16: Solder material 18: Wire 21: First through hole 22: Second through hole 31: Second heat sink 33: Pressing member 35: Spacer 37: Base 37a: Recess 51: Stem first part 52: Stem second part 100: Conventional semiconductor laser light source device 101: Stem 102: Heat sink 103: Submount 104: Semiconductor laser element 105: Power supply pin 110: Cap 110a: Window part L2: Laser light

JP, 2017-130365, A

Claims (7)

A first surface, a second surface located in a first direction with respect to the first surface, and a first through hole that is formed in a partial region and reaches the second surface from the first surface, A stem made of metal material,
At least a part is arranged so as to fit in the first through hole, a first heat sink composed of a second metal material having a higher thermal conductivity than the first metal material,
On the surface of the first heat sink, which is exposed on the side of the first surface of the first through hole, a plurality of sub-mounts are arranged along a second direction orthogonal to the first direction, and
A plurality of semiconductor laser devices arranged on the respective surfaces of the plurality of submounts,
In the first through hole, having a bonding material interposed between the inner wall of the stem and the outer wall of the first heat sink,
The first heat sink has a first region fixed to the stem by the bonding material at a position on the first surface side, and a second region not fixed to the stem at a position on the second surface side. A semiconductor laser light source device comprising: The semiconductor laser light source device according to claim 1, wherein the first heat sink protrudes outward from the first through hole with respect to the second surface in the first direction. The semiconductor laser light source device according to claim 1, wherein the bonding material is formed only in a region on the first surface side in the first through hole. A second heat sink arranged to contact the second region of the first heat sink;
The semiconductor laser light source device according to claim 1, further comprising a pressing member for fixing the second heat sink and the stem. The plurality of submounts are arranged on a surface of the first heat sink that is non-parallel to the first surface,
The plurality of semiconductor laser elements are arranged on the surfaces of the plurality of submounts so as to emit light in the first direction, respectively. The semiconductor laser light source device described. A mirror disposed on the surface of the first heat sink,
The plurality of submounts are arranged on a surface parallel to the first surface of the surfaces of the first heat sink,
The plurality of semiconductor laser elements are arranged on the surface of the plurality of submounts so as to emit light in a third direction orthogonal to both the first direction and the second direction,
5. The mirror according to claim 1, wherein the mirror converts a traveling direction of light emitted from the plurality of semiconductor laser elements toward the third direction into the first direction. The semiconductor laser light source device described in 1. The first metal material is one or more materials selected from the group consisting of iron and iron alloys,
7. The semiconductor laser light source device according to claim 1, wherein the second metal material is one or more kinds of materials selected from the group consisting of copper and copper alloys.

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