JP2020109863A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2020109863A JP2020109863A JP2020043437A JP2020043437A JP2020109863A JP 2020109863 A JP2020109863 A JP 2020109863A JP 2020043437 A JP2020043437 A JP 2020043437A JP 2020043437 A JP2020043437 A JP 2020043437A JP 2020109863 A JP2020109863 A JP 2020109863A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- RZXDTJIXPSCHCI-UHFFFAOYSA-N hexa-1,5-diene-2,5-diol Chemical compound OC(=C)CCC(O)=C RZXDTJIXPSCHCI-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
[項目1]
太陽電池であって、
複数のサブセルであって、前記複数のサブセルの各々は、個片化され、物理的に分離された半導体基板部分を含み、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士は、それらの間に溝を有する、複数のサブセルと、
モノリシック金属配線構造体であって、前記モノリシック金属配線構造体の一部分は前記複数のサブセルのサブセル同士を結合し、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝は、前記モノリシック金属配線構造体の一部分を露出させる、モノリシック金属配線構造体と、を備える、太陽電池。
[項目2]
前記太陽電池が、
前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に配置された封入材料を更に備える、項目1に記載の太陽電池。
[項目3]
前記サブセルの各々が、ほぼ同じ電圧特性およびほぼ同じ電流特性を有する、項目1に記載の太陽電池。
[項目4]
前記複数のサブセルが、複数の並列ダイオード、直列ダイオード、またはそれらの組み合わせである、項目1に記載の太陽電池。
[項目5]
前記太陽電池がバックコンタクト太陽電池であり、前記モノリシック金属配線構造体が、前記個片化され、物理的に分離された半導体基板部分の各々の、受光面と反対側の裏面上に配置されている、項目1に記載の太陽電池。
[項目6]
前記サブセルの各々によって発生される電流がほぼ同じである、項目5に記載の太陽電池。
[項目7]
前記サブセルの各々の前記受光面がテクスチャ化された表面である、項目5に記載の太陽電池。
[項目8]
前記個片化され、物理的に分離された半導体基板部分の各々が、バルク単結晶シリコン基板部分である、項目1に記載の太陽電池。
[項目9]
項目1に記載の太陽電池を複数備える、太陽光発電モジュール。
[項目10]
太陽電池ごとに、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に、前記太陽光発電(PV)モジュールの積層体の封入材料が配置されている、項目9に記載の太陽光発電モジュール。
[項目11]
太陽電池を製造する方法であって、
半導体基板の第1の表面上に金属配線構造体を形成する段階と、
前記半導体基板を前記半導体基板の反対側の第2の表面からスクライビングする段階と、を備え、前記スクライビングは、前記金属配線構造体の複数の部分で停止され、前記複数の部分を前記第2の表面から露出させる、方法。
[項目12]
前記半導体基板の前記第1の表面上に前記金属配線構造体を形成する段階が、前記半導体基板の前記第1の表面上に形成された金属箔をパターニングする段階を含む、項目11に記載の方法。
[項目13]
前記半導体基板の前記第1の表面上に前記金属配線構造体を形成する段階が、前記半導体基板の前記第1の表面の複数の部分上に1または複数の金属膜をめっきする段階を含む、項目11に記載の方法。
[項目14]
前記スクライビングする段階が、レーザを用いてスクライビングする段階を含む、項目11に記載の方法。
[項目15]
前記半導体基板をスクライビングする段階の前に、前記半導体基板の前記第2の表面をテクスチャ化する段階を更に備える、項目11に記載の方法。
[項目16]
前記スクライビングする段階が、複数のサブセルを形成する段階を含み、前記複数のサブセルの各々は、前記半導体基板の個片化され、物理的に分離された部分を含み、前記部分は、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間に溝を有し、前記金属配線構造体は前記複数のサブセルのサブセル同士を結合する、項目11に記載の方法。
[項目17]
前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に封入材料を形成する段階を更に備える、項目16に記載の方法。
[項目18]
前記複数のサブセルを形成する段階が、前記サブセルの各々を、ほぼ同じ電圧特性およびほぼ同じ電流特性を有するように形成する段階を含む、項目16に記載の方法。
[項目19]
前記複数のサブセルを形成する段階が、複数の並列ダイオード、直列ダイオード、またはそれらの組み合わせを形成する段階を含む、項目16に記載の方法。
[項目20]
前記半導体基板をスクライビングする段階の後に、前記太陽電池を太陽光発電(PV)モジュール積層体内に埋め込む段階を更に備え、前記PVモジュール積層体の封入材料が、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝を充填する、項目16に記載の方法。
[項目21]
項目11に記載の方法により製造された太陽電池。
[項目22]
第1の表面を有する半導体基板を含む太陽電池を製造する方法であって、
少なくとも2個のサブ太陽電池セルを物理的に隔離すべく、前記半導体基板を前記第1の表面までダイシングする段階の前に、前記半導体基板の前記第1の表面の直上において、前記太陽電池の前記少なくとも2個のサブ太陽電池セルの間に、それらの間の電気的セル間接続を提供するためのインターコネクトを形成する段階を備える、方法。
[項目23]
前記太陽電池の少なくとも2個のサブ太陽電池セルの間に前記インターコネクトを形成する段階が、
前記太陽電池の前記半導体基板の前記第1の表面上に金属配線構造体を形成する段階を更に含む、項目22に記載の方法。
[項目24]
前記半導体基板をダイシングする段階が、
前記半導体基板を前記半導体基板の反対側の第2の表面からスクライビングする段階を更に含む、項目23に記載の方法。
[項目25]
前記半導体基板をスクライビングする段階が、
前記金属配線構造体の複数の部分を前記第2の表面から露出させると、前記スクライビングを停止する段階を更に含む、項目24に記載の方法。
[項目26]
前記金属配線構造体の複数の部分を前記第2の表面から露出させると、前記スクライビングを停止する段階が、ポリマー層、金属層、および金属メッシュからなる群から選択される緩衝損傷層上で停止する段階を含む、項目24に記載の方法。
[項目27]
前記半導体基板をスクライビングする段階が、
前記金属配線構造体が前記少なくとも2個のサブ太陽電池セルの複数の部分を電気的に結合するように、前記少なくとも2個のサブ太陽電池セルの間に溝を形成する段階と、
前記溝内に封入材料を形成する段階と、を更に含む、項目24に記載の方法。
[項目28]
前記半導体基板をダイシングする段階が、
前記少なくとも2個のサブ太陽電池セルの各々において少なくとも1個のダイオードを形成する段階と、
前記少なくとも2個のサブ太陽電池セルの各々を、ほぼ同じ電圧特性およびほぼ同じ電流特性を有するように形成する段階と、を更に含む、項目22に記載の方法。
[項目29]
前記少なくとも2個のサブ太陽電池セルの各々において少なくとも1個のダイオードを形成する段階が、
前記少なくとも2個のサブ太陽電池セルの各々の前記少なくとも1個のダイオード内にP型ドーパント領域およびN型ドーパント領域を形成する段階と、
前記P型ドーパント領域への第1の金属接点を形成する段階と、
前記N型ドーパント領域への第2の金属接点を形成する段階と、を更に含む、項目28に記載の方法。
[項目30]
前記金属配線構造体を形成する段階が、
前記金属配線構造体の形成と実質的に同時に、前記半導体基板の前記第1の表面の複数の部分上に1または複数の金属膜をめっきする段階を更に含む、項目23に記載の方法。
[項目31]
前記金属配線構造体を形成する段階が、
前記半導体基板の前記第1の表面上に形成された金属箔をパターニングする段階を更に含む、項目23に記載の方法。
[項目32]
前記半導体基板をスクライビングする段階の前に、前記半導体基板の前記第2の表面をテクスチャ化する段階を更に含む、項目24に記載の方法。
Claims (32)
- 太陽電池であって、
複数のサブセルであって、前記複数のサブセルの各々は、個片化され、物理的に分離された半導体基板部分を含み、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士は、それらの間に溝を有する、複数のサブセルと、
モノリシック金属配線構造体であって、前記モノリシック金属配線構造体の一部分は前記複数のサブセルのサブセル同士を結合し、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝は、前記モノリシック金属配線構造体の一部分を露出させる、モノリシック金属配線構造体と、を備える、太陽電池。 - 前記太陽電池が、
前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に配置された封入材料を更に備える、請求項1に記載の太陽電池。 - 前記サブセルの各々が、ほぼ同じ電圧特性およびほぼ同じ電流特性を有する、請求項1に記載の太陽電池。
- 前記複数のサブセルが、複数の並列ダイオード、直列ダイオード、またはそれらの組み合わせである、請求項1に記載の太陽電池。
- 前記太陽電池がバックコンタクト太陽電池であり、前記モノリシック金属配線構造体が、前記個片化され、物理的に分離された半導体基板部分の各々の、受光面と反対側の裏面上に配置されている、請求項1に記載の太陽電池。
- 前記サブセルの各々によって発生される電流がほぼ同じである、請求項5に記載の太陽電池。
- 前記サブセルの各々の前記受光面がテクスチャ化された表面である、請求項5に記載の太陽電池。
- 前記個片化され、物理的に分離された半導体基板部分の各々が、バルク単結晶シリコン基板部分である、請求項1に記載の太陽電池。
- 請求項1に記載の太陽電池を複数備える、太陽光発電モジュール。
- 太陽電池ごとに、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に、前記太陽光発電(PV)モジュールの積層体の封入材料が配置されている、請求項9に記載の太陽光発電モジュール。
- 太陽電池を製造する方法であって、
半導体基板の第1の表面上に金属配線構造体を形成する段階と、
前記半導体基板を前記半導体基板の反対側の第2の表面からスクライビングする段階と、を備え、前記スクライビングは、前記金属配線構造体の複数の部分で停止され、前記複数の部分を前記第2の表面から露出させる、方法。 - 前記半導体基板の前記第1の表面上に前記金属配線構造体を形成する段階が、前記半導体基板の前記第1の表面上に形成された金属箔をパターニングする段階を含む、請求項11に記載の方法。
- 前記半導体基板の前記第1の表面上に前記金属配線構造体を形成する段階が、前記半導体基板の前記第1の表面の複数の部分上に1または複数の金属膜をめっきする段階を含む、請求項11に記載の方法。
- 前記スクライビングする段階が、レーザを用いてスクライビングする段階を含む、請求項11に記載の方法。
- 前記半導体基板をスクライビングする段階の前に、前記半導体基板の前記第2の表面をテクスチャ化する段階を更に備える、請求項11に記載の方法。
- 前記スクライビングする段階が、複数のサブセルを形成する段階を含み、前記複数のサブセルの各々は、前記半導体基板の個片化され、物理的に分離された部分を含み、前記部分は、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間に溝を有し、前記金属配線構造体は前記複数のサブセルのサブセル同士を結合する、請求項11に記載の方法。
- 前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝内に封入材料を形成する段階を更に備える、請求項16に記載の方法。
- 前記複数のサブセルを形成する段階が、前記サブセルの各々を、ほぼ同じ電圧特性およびほぼ同じ電流特性を有するように形成する段階を含む、請求項16に記載の方法。
- 前記複数のサブセルを形成する段階が、複数の並列ダイオード、直列ダイオード、またはそれらの組み合わせを形成する段階を含む、請求項16に記載の方法。
- 前記半導体基板をスクライビングする段階の後に、前記太陽電池を太陽光発電(PV)モジュール積層体内に埋め込む段階を更に備え、前記PVモジュール積層体の封入材料が、前記個片化され、物理的に分離された半導体基板部分の隣接する部分同士の間の前記溝を充填する、請求項16に記載の方法。
- 請求項11に記載の方法により製造された太陽電池。
- 第1の表面を有する半導体基板を含む太陽電池を製造する方法であって、
少なくとも2個のサブ太陽電池セルを物理的に隔離すべく、前記半導体基板を前記第1の表面までダイシングする段階の前に、前記半導体基板の前記第1の表面の直上において、前記太陽電池の前記少なくとも2個のサブ太陽電池セルの間に、それらの間の電気的セル間接続を提供するためのインターコネクトを形成する段階を備える、方法。 - 前記太陽電池の少なくとも2個のサブ太陽電池セルの間に前記インターコネクトを形成する段階が、
前記太陽電池の前記半導体基板の前記第1の表面上に金属配線構造体を形成する段階を更に含む、請求項22に記載の方法。 - 前記半導体基板をダイシングする段階が、
前記半導体基板を前記半導体基板の反対側の第2の表面からスクライビングする段階を更に含む、請求項23に記載の方法。 - 前記半導体基板をスクライビングする段階が、
前記金属配線構造体の複数の部分を前記第2の表面から露出させると、前記スクライビングを停止する段階を更に含む、請求項24に記載の方法。 - 前記金属配線構造体の複数の部分を前記第2の表面から露出させると、前記スクライビングを停止する段階が、ポリマー層、金属層、および金属メッシュからなる群から選択される緩衝損傷層上で停止する段階を含む、請求項24に記載の方法。
- 前記半導体基板をスクライビングする段階が、
前記金属配線構造体が前記少なくとも2個のサブ太陽電池セルの複数の部分を電気的に結合するように、前記少なくとも2個のサブ太陽電池セルの間に溝を形成する段階と、
前記溝内に封入材料を形成する段階と、を更に含む、請求項24に記載の方法。 - 前記半導体基板をダイシングする段階が、
前記少なくとも2個のサブ太陽電池セルの各々において少なくとも1個のダイオードを形成する段階と、
前記少なくとも2個のサブ太陽電池セルの各々を、ほぼ同じ電圧特性およびほぼ同じ電流特性を有するように形成する段階と、を更に含む、請求項22に記載の方法。 - 前記少なくとも2個のサブ太陽電池セルの各々において少なくとも1個のダイオードを形成する段階が、
前記少なくとも2個のサブ太陽電池セルの各々の前記少なくとも1個のダイオード内にP型ドーパント領域およびN型ドーパント領域を形成する段階と、
前記P型ドーパント領域への第1の金属接点を形成する段階と、
前記N型ドーパント領域への第2の金属接点を形成する段階と、を更に含む、請求項28に記載の方法。 - 前記金属配線構造体を形成する段階が、
前記金属配線構造体の形成と実質的に同時に、前記半導体基板の前記第1の表面の複数の部分上に1または複数の金属膜をめっきする段階を更に含む、請求項23に記載の方法。 - 前記金属配線構造体を形成する段階が、
前記半導体基板の前記第1の表面上に形成された金属箔をパターニングする段階を更に含む、請求項23に記載の方法。 - 前記半導体基板をスクライビングする段階の前に、前記半導体基板の前記第2の表面をテクスチャ化する段階を更に含む、請求項24に記載の方法。
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JP7078213B2 (ja) | 2022-05-31 |
KR20160140774A (ko) | 2016-12-07 |
JP2017509140A (ja) | 2017-03-30 |
BR112016022560A2 (pt) | 2017-08-15 |
CL2016002444A1 (es) | 2017-02-24 |
US20150280028A1 (en) | 2015-10-01 |
CN109103276B (zh) | 2023-03-24 |
MX2016012344A (es) | 2016-12-02 |
JP6736828B2 (ja) | 2020-08-05 |
CN106463555B (zh) | 2018-08-21 |
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US20200279967A1 (en) | 2020-09-03 |
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SG11201607956YA (en) | 2016-10-28 |
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