JP2020107750A5 - - Google Patents
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- JP2020107750A5 JP2020107750A5 JP2018245652A JP2018245652A JP2020107750A5 JP 2020107750 A5 JP2020107750 A5 JP 2020107750A5 JP 2018245652 A JP2018245652 A JP 2018245652A JP 2018245652 A JP2018245652 A JP 2018245652A JP 2020107750 A5 JP2020107750 A5 JP 2020107750A5
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- JP
- Japan
- Prior art keywords
- semiconductor device
- contact region
- alternator
- base
- convex portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (10)
前記リード電極に接続された電子部品と、
前記電子部品を支持するベースと、を備え、
前記ベースは、前記ベースの一方の面に、前記電子部品が配置される台座部と、前記台座部の外周側に配置された円環状の外周凸部とが形成され、前記ベースの一方の面と反対側の面である底面に、外部部材の孔に半導体装置を挿入するための押圧治具が接触する治具接触領域が形成されている
ことを特徴とする半導体装置。 With the lead electrode
Electronic components connected to the lead electrode and
With a base that supports the electronic components,
In the base, a pedestal portion on which the electronic component is arranged and an annular outer peripheral convex portion arranged on the outer peripheral side of the pedestal portion are formed on one surface of the base, and one surface of the base is formed. and the bottom surface is a surface opposite to the semiconductor device, characterized in that the jig contact region pressing tool for inserting a semi-conductor device in a hole of the outer member is in contact is formed.
前記治具接触領域の外径は、前記台座部の直径以上であり、かつ、前記外周凸部の内径以下である
ことを特徴とする半導体装置。 In the semiconductor device according to claim 1,
A semiconductor device characterized in that the outer diameter of the jig contact region is equal to or larger than the diameter of the pedestal portion and equal to or smaller than the inner diameter of the outer peripheral convex portion.
前記治具接触領域は、前記底面に形成された底面凸部である
ことを特徴とする半導体装置。 In the semiconductor device according to claim 2,
A semiconductor device characterized in that the jig contact region is a bottom surface convex portion formed on the bottom surface.
前記治具接触領域は、円環状である
ことを特徴とする半導体装置。 In the semiconductor device according to claim 2,
A semiconductor device characterized in that the jig contact region is annular.
前記治具接触領域は、円環形底面凸部である
ことを特徴とする半導体装置。 In the semiconductor device according to claim 2,
A semiconductor device characterized in that the jig contact region is an annular bottom surface convex portion.
前記整流器は、放熱体に形成された嵌合孔に挿入された半導体装置を有し、前記半導体装置は、リード電極と、前記リード電極に接続された電子部品と、前記電子部品を支持するベースとを有し、前記ベースは、前記ベースの一方の面に、前記電子部品が配置される台座部と、前記台座部の外周側に配置された円環状の外周凸部とが形成され、前記ベースの一方の面と反対側の面である底面に、外部部材の孔に前記半導体装置を挿入するための押圧治具が接触する治具接触領域が形成されている
ことを特徴とするオルタネータ。 In an alternator including a rotor, a stator, and a rectifier,
The rectifier has a semiconductor device inserted into a fitting hole formed in a radiator, and the semiconductor device includes a lead electrode, an electronic component connected to the lead electrode, and a base that supports the electronic component. The base has a pedestal portion on which the electronic component is arranged and an annular outer peripheral convex portion arranged on the outer peripheral side of the pedestal portion on one surface of the base. An alternator characterized in that a jig contact region is formed on a bottom surface, which is a surface opposite to one surface of the base, in contact with a pressing jig for inserting the semiconductor device into a hole of an external member.
前記半導体装置の前記治具接触領域の外径は、前記台座部の直径以上であり、かつ、前記外周凸部の内径以下である
ことを特徴とするオルタネータ。 In the alternator according to claim 6,
An alternator characterized in that the outer diameter of the jig contact region of the semiconductor device is equal to or larger than the diameter of the pedestal portion and equal to or smaller than the inner diameter of the outer peripheral convex portion.
前記半導体装置の前記治具接触領域は、前記底面に形成された底面凸部である
ことを特徴とするオルタネータ。 In the alternator according to claim 7,
An alternator characterized in that the jig contact region of the semiconductor device is a bottom surface convex portion formed on the bottom surface.
前記半導体装置の前記治具接触領域は、円環状である
ことを特徴とするオルタネータ。 In the alternator according to claim 7,
An alternator characterized in that the jig contact region of the semiconductor device is annular.
前記半導体装置の前記治具接触領域は、円環形底面凸部である
ことを特徴とするオルタネータ。 In the alternator according to claim 7,
An alternator characterized in that the jig contact region of the semiconductor device is an annular bottom surface convex portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018245652A JP7231407B2 (en) | 2018-12-27 | 2018-12-27 | Semiconductor device and alternator using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018245652A JP7231407B2 (en) | 2018-12-27 | 2018-12-27 | Semiconductor device and alternator using it |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020107750A JP2020107750A (en) | 2020-07-09 |
| JP2020107750A5 true JP2020107750A5 (en) | 2021-11-25 |
| JP7231407B2 JP7231407B2 (en) | 2023-03-01 |
Family
ID=71449402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018245652A Active JP7231407B2 (en) | 2018-12-27 | 2018-12-27 | Semiconductor device and alternator using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7231407B2 (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19549202B4 (en) * | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Rectifier diode |
| JP4882434B2 (en) * | 2006-03-09 | 2012-02-22 | サンケン電気株式会社 | Semiconductor device |
| JP3140903U (en) * | 2007-12-13 | 2008-04-17 | サンケン電気株式会社 | Semiconductor device |
| JP3159090U (en) * | 2010-02-18 | 2010-05-06 | サンケン電気株式会社 | Semiconductor device |
| JP3159633U (en) * | 2010-03-10 | 2010-05-27 | サンケン電気株式会社 | Semiconductor device |
| JP2014090149A (en) * | 2012-10-31 | 2014-05-15 | Hitachi Ltd | Semiconductor device |
| JP6263014B2 (en) * | 2013-12-12 | 2018-01-17 | 株式会社日立製作所 | Semiconductor device, alternator and power conversion device using the same |
| JP6263108B2 (en) * | 2014-09-11 | 2018-01-17 | 株式会社日立製作所 | Semiconductor device, alternator and power conversion device using the same |
| JP6641161B2 (en) * | 2015-11-18 | 2020-02-05 | 株式会社 日立パワーデバイス | Semiconductor device and alternator using the same |
-
2018
- 2018-12-27 JP JP2018245652A patent/JP7231407B2/en active Active
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