JP2020107719A - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
- Publication number
- JP2020107719A JP2020107719A JP2018244833A JP2018244833A JP2020107719A JP 2020107719 A JP2020107719 A JP 2020107719A JP 2018244833 A JP2018244833 A JP 2018244833A JP 2018244833 A JP2018244833 A JP 2018244833A JP 2020107719 A JP2020107719 A JP 2020107719A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- carrier
- load lock
- chamber
- lock chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
Description
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長装置において、
前記第1ロボットのハンドの先端に装着された第1ブレードは、前記キャリアを支持する第1凹部と、当該第1凹部の底面に前記ウェーハを支持する第2凹部とを有する気相成長装置である。
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられた気相成長装置において、
前記ロードロック室には、前記キャリア又は前記ウェーハを支持するホルダが設けられている気相成長装置である。
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長装置において、
前記反応室には、サセプタを支持して回転駆動部により回転するサポートシャフトと、前記サポートシャフトに対して昇降駆動部により昇降するリフトシャフトとが設けられ、
前記リフトシャフトには、キャリアリフトピンが装着可能な第1装着部と、ウェーハリフトピンが装着可能な第2装着部とが形成され、
前記サポートシャフトには、前記第1装着部に装着されたキャリアリフトピンが貫通可能な第1貫通孔と、前記第2装着部に装着されたウェーハリフトピンが貫通可能な第2貫通孔とが形成されている気相成長装置である。
11…反応炉
111…反応室
112…サセプタ
113…ガス供給装置
114…ゲートバルブ
115…キャリアリフトピン
116…サポートシャフト
1161…第1貫通孔
1162…第2貫通孔
117…リフトシャフト
1171…第1装着部
1172…第2装着部
118…ウェーハリフトピン
119a…回転駆動部
119b…昇降駆動部
12…ウェーハ移載室
121…第1ロボット
122…第1ロボットコントローラ
123…第1ブレード
124…第1凹部
125…第2凹部
13…ロードロック室
131…第1ドア
132…第2ドア
14…ファクトリインターフェース
141…第2ロボット
142…第2ロボットコントローラ
143…第2ブレード
144…第1凹部
15…ウェーハ収納容器
16…統括コントローラ
17…ホルダ
171…ホルダベース
172…第1ホルダ
173…第2ホルダ
174…ウェーハリフトピン
C…キャリア
C11…底面
C12…上面
C13…外周側壁面
C14…内周側壁面
WF…ウェーハ
Claims (3)
- ウェーハの外縁を支持するリング状のキャリアを備え、複数の当該キャリアを用いて、
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長装置において、
前記第1ロボットのハンドの先端に装着された第1ブレードは、
前記キャリアを支持する第1凹部と、
前記第1凹部の底面に形成された、前記ウェーハを支持可能な第2凹部と、を有する気相成長装置。 - ウェーハの外縁を支持するリング状のキャリアを備え、複数の当該キャリアを用いて、
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられた気相成長装置において、
前記ロードロック室には、前記キャリアを支持するとともに前記ウェーハを支持可能なホルダが設けられている気相成長装置。 - ウェーハの外縁を支持するリング状のキャリアを備え、複数の当該キャリアを用いて、
複数の処理前のウェーハを、ウェーハ収納容器から、ファクトリインターフェース、ロードロック室及びウェーハ移載室を介して反応室へ順次搬送するとともに、
複数の処理後のウェーハを、前記反応室から、前記ウェーハ移載室、前記ロードロック室及び前記ファクトリインターフェースを介して前記ウェーハ収納容器へ順次搬送する気相成長装置であって、
前記ロードロック室は、第1ドアを介して前記ファクトリインターフェースと連通するとともに、第2ドアを介して前記ウェーハ移載室と連通し、
前記ウェーハ移載室は、ゲートバルブを介して、前記ウェーハにCVD膜を形成する前記反応室と連通し、
前記ウェーハ移載室には、前記ロードロック室に搬送されてきた処理前のウェーハをキャリアに搭載された状態で前記反応室に投入するとともに、前記反応室において処理を終えた処理後のウェーハをキャリアに搭載された状態で前記反応室から取り出して前記ロードロック室に搬送する第1ロボットが設けられ、
前記ファクトリインターフェースには、処理前のウェーハをウェーハ収納容器から取り出し、前記ロードロック室にて待機するキャリアに搭載するとともに、前記ロードロック室に搬送されてきた、キャリアに搭載された処理後のウェーハを、ウェーハ収納容器に収納する第2ロボットが設けられ、
前記ロードロック室には、キャリアを支持するホルダが設けられた気相成長装置において、
前記反応室には、サセプタを支持して回転駆動部により回転するサポートシャフトと、前記サポートシャフトに対して昇降駆動部により昇降するリフトシャフトとが設けられ、
前記リフトシャフトには、キャリアリフトピンが装着可能な第1装着部と、ウェーハリフトピンが装着可能な第2装着部とが形成され、
前記サポートシャフトには、前記第1装着部に装着されたキャリアリフトピンが貫通可能な第1貫通孔と、前記第2装着部に装着されたウェーハリフトピンが貫通可能な第2貫通孔とが形成されている気相成長装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018244833A JP7003905B2 (ja) | 2018-12-27 | 2018-12-27 | 気相成長装置 |
PCT/JP2019/043260 WO2020137170A1 (ja) | 2018-12-27 | 2019-11-05 | 気相成長装置 |
US17/415,838 US20220064790A1 (en) | 2018-12-27 | 2019-11-05 | Vapor deposition device |
KR1020217022088A KR102649528B1 (ko) | 2018-12-27 | 2019-11-05 | 기상 성장 장치 |
DE112019006538.6T DE112019006538T5 (de) | 2018-12-27 | 2019-11-05 | Gasphasenabscheidungsvorrichtung |
CN201980086208.0A CN113439323B (zh) | 2018-12-27 | 2019-11-05 | 气相成长装置 |
KR1020237011940A KR20230051316A (ko) | 2018-12-27 | 2019-11-05 | 기상 성장 장치 |
KR1020237011939A KR20230053708A (ko) | 2018-12-27 | 2019-11-05 | 기상 성장 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018244833A JP7003905B2 (ja) | 2018-12-27 | 2018-12-27 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020107719A true JP2020107719A (ja) | 2020-07-09 |
JP7003905B2 JP7003905B2 (ja) | 2022-01-21 |
Family
ID=71126553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018244833A Active JP7003905B2 (ja) | 2018-12-27 | 2018-12-27 | 気相成長装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220064790A1 (ja) |
JP (1) | JP7003905B2 (ja) |
KR (3) | KR20230053708A (ja) |
CN (1) | CN113439323B (ja) |
DE (1) | DE112019006538T5 (ja) |
WO (1) | WO2020137170A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7188250B2 (ja) * | 2019-04-11 | 2022-12-13 | 株式会社Sumco | 気相成長装置及びこれに用いられるキャリア |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09157839A (ja) * | 1995-12-04 | 1997-06-17 | Hitachi Ltd | 薄膜形成装置 |
JPH09162258A (ja) * | 1995-12-07 | 1997-06-20 | Nec Corp | 半導体装置の製造装置およびこれを用いた半導体装置の製造方法 |
JP2003332250A (ja) * | 2002-03-15 | 2003-11-21 | Asm Internatl Nv | 炉内でウェハをバッチ処理するための方法および装置 |
JP2004040043A (ja) * | 2002-07-08 | 2004-02-05 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2011148629A1 (ja) * | 2010-05-27 | 2011-12-01 | パナソニック株式会社 | プラズマ処理装置 |
JP2012253348A (ja) * | 2011-05-31 | 2012-12-20 | Semes Co Ltd | 基板処理装置及び基板処理方法 |
US20180282900A1 (en) * | 2015-12-01 | 2018-10-04 | Siltronic Ag | Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04346247A (ja) * | 1991-05-23 | 1992-12-02 | Fujitsu Ltd | 半導体製造装置及びウェハ搬送アーム及びウェハ載置台 |
US5445486A (en) * | 1992-03-29 | 1995-08-29 | Tokyo Electron Sagami Limited | Substrate transferring apparatus |
CN1052566C (zh) * | 1993-11-05 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
WO2012009371A2 (en) * | 2010-07-12 | 2012-01-19 | Applied Materials, Inc. | Compartmentalized chamber |
US10692765B2 (en) * | 2014-11-07 | 2020-06-23 | Applied Materials, Inc. | Transfer arm for film frame substrate handling during plasma singulation of wafers |
WO2017066418A1 (en) | 2015-10-15 | 2017-04-20 | Applied Materials, Inc. | Substrate carrier system |
KR101804045B1 (ko) | 2016-03-23 | 2017-12-01 | 이동근 | 바-타입 이오나이저 |
-
2018
- 2018-12-27 JP JP2018244833A patent/JP7003905B2/ja active Active
-
2019
- 2019-11-05 KR KR1020237011939A patent/KR20230053708A/ko active IP Right Grant
- 2019-11-05 WO PCT/JP2019/043260 patent/WO2020137170A1/ja active Application Filing
- 2019-11-05 KR KR1020217022088A patent/KR102649528B1/ko active IP Right Grant
- 2019-11-05 KR KR1020237011940A patent/KR20230051316A/ko active IP Right Grant
- 2019-11-05 CN CN201980086208.0A patent/CN113439323B/zh active Active
- 2019-11-05 DE DE112019006538.6T patent/DE112019006538T5/de active Pending
- 2019-11-05 US US17/415,838 patent/US20220064790A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09157839A (ja) * | 1995-12-04 | 1997-06-17 | Hitachi Ltd | 薄膜形成装置 |
JPH09162258A (ja) * | 1995-12-07 | 1997-06-20 | Nec Corp | 半導体装置の製造装置およびこれを用いた半導体装置の製造方法 |
JP2003332250A (ja) * | 2002-03-15 | 2003-11-21 | Asm Internatl Nv | 炉内でウェハをバッチ処理するための方法および装置 |
JP2004040043A (ja) * | 2002-07-08 | 2004-02-05 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2011148629A1 (ja) * | 2010-05-27 | 2011-12-01 | パナソニック株式会社 | プラズマ処理装置 |
JP2012253348A (ja) * | 2011-05-31 | 2012-12-20 | Semes Co Ltd | 基板処理装置及び基板処理方法 |
US20180282900A1 (en) * | 2015-12-01 | 2018-10-04 | Siltronic Ag | Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer |
Also Published As
Publication number | Publication date |
---|---|
KR20210100719A (ko) | 2021-08-17 |
CN113439323A (zh) | 2021-09-24 |
WO2020137170A1 (ja) | 2020-07-02 |
CN113439323B (zh) | 2024-03-15 |
KR20230053708A (ko) | 2023-04-21 |
US20220064790A1 (en) | 2022-03-03 |
DE112019006538T5 (de) | 2021-09-23 |
JP7003905B2 (ja) | 2022-01-21 |
KR102649528B1 (ko) | 2024-03-20 |
KR20230051316A (ko) | 2023-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2020137169A1 (ja) | 気相成長装置 | |
KR102577157B1 (ko) | 기상 성장 방법 및 기상 성장 장치 | |
WO2020137170A1 (ja) | 気相成長装置 | |
JP7147551B2 (ja) | 気相成長装置及びこれに用いられるキャリア | |
JP7279630B2 (ja) | 気相成長装置 | |
JP7192756B2 (ja) | 気相成長装置及び気相成長方法 | |
JP7264038B2 (ja) | 気相成長装置及び気相成長処理方法 | |
KR102632333B1 (ko) | 기상 성장 장치 및 이에 이용되는 캐리어 | |
KR102522029B1 (ko) | 기상 성장 방법 및 기상 성장 장치 | |
JP7205458B2 (ja) | 気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211213 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7003905 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |