JP2020107628A - Dicing die bonding film and method for manufacturing semiconductor device using dicing die bonding film - Google Patents

Abstract

To provide a dicing die bonding film capable of reducing chip fly in dicing and residue in picking up.SOLUTION: There is provided a dicing die bonding film which includes a dicing film and a thermosetting conductive die bonding film provided on the dicing film. A cured product of the thermosetting conductive die bonding film has a thermal conductivity in a film thickness direction of 0.1-20 W/mK. The Young's modulus (MPa) of the dicing film at 25°C in the MD direction, the Young's modulus being measured according to JIS-K 7127, and the 180° peel adhesion strength X (cN/25 mm) of the dicing film with respect to the surface of a silicon mirror wafer, the peel adhesion strength being measured according to JIS Z 0237, satisfy a specific requirement.SELECTED DRAWING: Figure 1

Description

The present invention relates to a dicing die bonding film and a method for manufacturing a semiconductor device using the dicing die bonding film.

At present, various developments have been made on thermosetting die bonding films. As this type of technology, for example, the technology described in Patent Document 1 is known. Patent Document 1 describes a thermosetting die attach film containing an epoxy resin.

JP, 2011-82480, A

As a result of a study by the present inventors, it was found that the thermosetting die attach film described in Patent Document 1 described above has room for improvement in chip flying during dicing and residues during pickup.

Further, the present inventor further studied, especially in a dicing die bonding film including a thermosetting conductive die bonding film, chip flying during dicing, and it is difficult to reduce the residue at the time of pickup. I found that there is.

In the dicing die bonding film provided with the thermosetting conductive die bonding film, the present inventor can adjust the characteristics of the dicing film to fly the chip during the dicing, and to control the residue at the time of pickup. Heading out, the present invention has been completed.
That is, the present invention is a dicing die bonding film comprising a dicing film and a thermosetting conductive die bonding film provided on the dicing film,
The cured product of the thermosetting conductive die bonding film has a thermal conductivity of 0.1 to 20 W/mK in the film thickness direction,
Young's modulus Y (MPa) in the MD direction of the dicing film at 25° C., measured according to JIS K 7127,
The 180 degree peeling adhesive force X (cN/25 mm) of the dicing film with respect to the surface of the silicon mirror wafer, measured according to JIS Z 0237,
Provided is a dicing die bonding film that satisfies the following formula (1).
Formula (1) 300≦Y+0.5X≦600

Further, the present invention is a method for manufacturing a semiconductor device using the dicing die bonding film,
On the semiconductor substrate, a bonding step of bonding so that the semiconductor substrate and the thermosetting conductive die bonding film side of the dicing die bonding film face each other,
A dicing step of obtaining a plurality of semiconductor chips by dicing the semiconductor substrate to which the dicing die bonding film is attached,
A pickup step of picking up at least one of the plurality of semiconductor chips;
A method for manufacturing a semiconductor device is provided.

According to the present invention, it is possible to provide a dicing die bonding film capable of reducing chip flying during dicing and residues during pickup.

The sectional view of the dicing die bonding film of this embodiment is shown. The process sectional drawing of the manufacturing method of the semiconductor device using the dicing die-bonding film of this embodiment is shown.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same constituents will be referred to with the same numerals, and the description thereof will not be repeated. Moreover, the figure is a schematic view and does not match the actual dimensional ratio.
In the present specification, the notation “a to b” in the description of the numerical range means a or more and b or less, unless otherwise specified. For example, “1 to 5 mass%” means “1 mass% or more and 5 mass% or less”.
In the present specification, the term "electronic device" means a semiconductor chip, a semiconductor element, a printed wiring board, an electric circuit display device, an information communication terminal, a light emitting diode, a physical battery, a chemical battery, or the like to which an electronic technology is applied. , Device, final product, etc.
Hereinafter, embodiments of the present invention will be described in detail.

The outline of the dicing die bonding film of this embodiment will be described.

Conventionally, in the method of manufacturing a semiconductor device, as one of the steps of dividing a semiconductor wafer into semiconductor chips, a step of dicing a semiconductor wafer fixed to a dicing film into a plurality of semiconductor chips by dicing, and cutting A manufacturing method including a step of picking up the semiconductor chip from a dancing film and a step of die-bonding the picked-up semiconductor chip to an adherend such as a substrate is applied.

In recent years, instead of the dicing film, a dicing die bond film in which a die bond film is laminated on the dicing film may be used. In this case, in the dicing step, the semiconductor wafer is cut together with the die bond film, in the pickup step, the semiconductor chip with the die bond film is picked up, and in the die bond step, the semiconductor chip is die bonded to the adherend via the die bond film. It

The dicing die-bonding film is required to adhere well to the silicon wafer so as not to cause chip fly during dicing, but at the time of pickup, the die-bonding film and the dicing film are quickly peeled off, It is required that no residue of the dicing film remains on the film. However, it was difficult to obtain a dicing die bond film capable of reducing both chip fly and residue.

On the other hand, in recent years, the die bond film may be required to have properties such as electrical conductivity and thermal conductivity. There was a technology to give conductivity. In particular, when the resin composition forming the die bond film contains a filler in this way, it becomes difficult to adjust the mechanical properties of the dicing die bond film, and it is possible to reduce both chip fly and residue. It was difficult to obtain a die bond film.

The present inventor diligently studied, and by controlling the adhesive force X of the dicing film and the Young's modulus Y to have a specific relationship, that is, by satisfying the relationship represented by the following formula (1), The present invention has been accomplished by finding that it is possible to reduce both chip fly and residue.
Formula (1) 300≦Y+0.5X≦600

<Dicing die bonding film>
The configuration of the dicing die bonding film of this embodiment will be described below. The dicing die bonding film of this embodiment includes a dicing film and a thermosetting die bonding film provided on the dicing film. This dicing die bonding film can be used as a die attach film with a dicing sheet function as described above.

An example of the structure of the dicing die bonding film 100 of this embodiment will be described with reference to FIG. FIG. 1 shows a cross-sectional view of a dicing die bonding film 100 of this embodiment.

As shown in FIG. 1, the dicing die bonding film 100 of the present embodiment can be a sheet member including the dicing film 10 and the thermosetting conductive die bonding film 20 laminated on the dicing film 10. The dicing die bonding film 100 may be a roll shape that can be wound up, or may be a rectangular sheet-like shape. The surface of the thermosetting conductive die bonding film 20 in the dicing die bonding film 100 may be exposed or covered with a protective film (cover film 30), for example. As the protective film, a film having a known protective function can be used, but, for example, a PET film may be used. Such a dicing die bonding film 100 can be used after peeling off the cover film 30.

The dicing film of this embodiment preferably comprises a base material 11 and an adhesive layer 12.
The dicing die bonding film 100 of the present embodiment may have other functional layers than the dicing film 10, the thermosetting conductive die bonding film 20 and the cover film 30.

In a top view of the dicing die bonding film 100 of the present embodiment, one layer or two or more layers of the thermosetting conductive die bonding film 20 may be arranged on the plane of one dicing film 10. The thermosetting conductive die bonding films 20 may be arranged in a line along the longitudinal direction of the rectangular dicing film 10. The shape of the thermosetting conductive die bonding film 20 in a top view may be, for example, a circular shape. After the thermosetting conductive die bonding film 20 is formed on the dicing film 10, the thermosetting conductive die bonding film 20 is half-cut to obtain a thermosetting conductive die bonding film 20 having a desired shape. Is obtained. This half-cut may be performed before the cover film 30 is laminated on the thermosetting conductive die bonding film 20 or after the cover film 30 is laminated. The shape of the cover film 30 in a top view may be substantially the same as that of the thermosetting conductive die bonding film 20.

In a cross-sectional view of the dicing die bonding film 100 of this embodiment, a plurality of thermosetting conductive die bonding films 20 may be arranged on the surface of one dicing film 10. At this time, the thermosetting conductive die bonding films 20 are spaced apart from each other, and the cover film 30 is also spaced apart for each thermosetting conductive die bonding film 20. The outer edge of the cover film 30 may be formed to the outside of the outer edge of the thermosetting conductive die bonding film 20. Thereby, the peelability of the cover film 30 can be made favorable.

The dicing die bonding film of the present embodiment,
On the semiconductor substrate, a bonding step of bonding so that the semiconductor substrate and the thermosetting conductive die bonding film side of the dicing die bonding film face each other,
A dicing step of obtaining a plurality of semiconductor chips by dicing the semiconductor substrate to which the dicing die bonding film is attached,
A pickup step of picking up at least one of the plurality of semiconductor chips;
Can be applied to a method for manufacturing a semiconductor device having

An example of a method for manufacturing a semiconductor device using the dicing die bonding film 100 of this embodiment will be described with reference to FIG. FIG. 2 is a process sectional view of a method for manufacturing a semiconductor device using the dicing die bonding film 100 of this embodiment.

First, as shown in FIG. 2A, the thermosetting conductivity of the dicing die bonding film 100 obtained by peeling the cover film 30 from the surface of the thermosetting conductive die bonding film 20 on the back surface of the wafer 4 (silicon wafer). The adhesive die bonding film 20 is attached. The laminating step of the wafer 40 can be carried out, for example, under mild conditions of 60° C. or lower.

Next, the structure of the dicing film 10, the thermosetting conductive die bonding film 20 and the wafer 40 is fixed on a dicing device on a wafer ring or the like. Then, using the cutting means such as a dicing saw, the thermosetting conductive die bonding film 20 and the wafer 40 in the above structure are cut into individual pieces to obtain semiconductor chips as individual die 50. ..

Then, as shown in FIG. 2B, between the dicing film 10 and the thermosetting conductive die bonding film 20, the thermosetting conductive die bonding film 20 is fixedly left on the back surface of the semiconductor chip. Peel off. At this time, a radiation irradiation step or a heating step of decreasing the adhesive strength of the dicing film by curing by irradiation with radiation before peeling can be included. According to the dicing die bonding film of the present embodiment, it is possible to separate the dicing film 10 and the thermosetting conductive die bonding film 20 without including a heating step and a radiation irradiation step. According to the present invention, the dicing film 10 and the thermosetting conductive die-bonding film 20 can be separated from each other without including the heating step and the ultraviolet irradiation step. The die bonding film, especially the resin contained in the die bonding film can be prevented from being modified, and the range of choices of the resin that can be included in the die bonding film is widened, and the width and the design range of the die bonding film can be provided. The range of possible properties can be widened.

In this way, the die 50 (semiconductor chip) with the thermosetting conductive die bonding film 20 is picked up. The die 50 (semiconductor chip) can be die-bonded by laminating the die 50 on the metal lead frame or the substrate with the thermosetting conductive die-bonding film 20 interposed therebetween and heating and pressure bonding.

Subsequently, the thermosetting conductive die bonding film 20 is cured by heat treatment to firmly bond the semiconductor chip to the lead frame, the substrate, etc. via the thermosetting conductive die bonding film 20. The device can be obtained. The film adhesive of this embodiment can be used for processing a wafer having a large area size of 8 inches or more.

Hereinafter, each structure of the dicing die bonding film of this embodiment will be described in detail.
The dicing die bonding film of this embodiment includes a dicing film and a thermosetting die bonding film provided on the dicing film.

<Dicing film>
The dicing film according to the present embodiment,
Young's modulus Y (MPa) of the dicing film at 25° C. measured according to JIS K 7161,
The 180 degree peeling adhesive force X (cN/25 mm) of the dicing film with respect to the surface of the silicon mirror wafer, measured according to JIS Z 0237,
The following formula (1) is satisfied.
Formula (1) 300≦Y+0.5X≦600

The Young's modulus Y (MPa) of the dicing film is measured as follows, for example.
First, the dicing film is cut into a test width of 10 mm and a length of 120 mm to prepare a Young's modulus measurement sample. The Young's modulus of this Young's modulus measurement sample is measured based on JISK7161. The test equipment and test conditions are shown below.
Testing equipment: ORIONTEC, Tensilon universal testing machine (RTC-1250)
Test conditions: distance between chucks 80 mm, pulling speed 200 mm/min

Further, the 180 degree peeling adhesive strength X (cN/25 mm) of the dicing film from the surface of the silicon mirror wafer is measured as follows.
First, the silicon mirror wafer is wiped with a waste cloth containing toluene, a waste cloth containing methanol, and a waste cloth containing toluene.
From the dicing die bonding film, the exposed portion of the pressure-sensitive adhesive layer of the dicing film is cut out into 10 mm×10 mm to obtain a sample for measuring the adhesive force. The pressure-sensitive adhesive layer side of the pressure-sensitive adhesive strength measurement sample is bonded to a silicon mirror wafer at 60° C. and 0.5 MPa for 20 seconds, and then left for 24 hours. Then, the film was cut into a width of 10 mm to obtain a test piece.

After standing for 24 hours, the dicing film is peeled off and the adhesive strength is measured based on JIS Z0237. The peeling conditions are as follows: the angle θ between the surface of the adhesive layer and the surface of the silicon mirror wafer is 180°, the pulling speed is 300 mm/min, and the room temperature (23° C.).
The adhesive force of the dicing film can be measured, for example, by using the end of the dicing die bonding film at the exposed portion of the adhesive of the dicing film.

In the dicing die bonding film of the present embodiment, both the chip fly and the residue can be reduced when the adhesive force X of the dicing film and the Young's modulus Y satisfy the relationship represented by the above formula (1).

In the dicing die bonding film of the present embodiment, when the adhesive force X of the dicing film and the Young's modulus Y satisfy the relationship represented by the above formula (1), both chip fly and residue can be reduced. Although the mechanism is not clear, the present inventors have examined various characteristics of the dicing die bonding film and the relationship between chip fly and residue, and found that the characteristics of the dicing film side and the relationship between chip fly and residue I found sex. First, the inventors of the present invention have a problem that if the adhesive force X of the dicing film is too low, chip fly occurs during dicing, and if the adhesive force X of the dicing film is too high, residues increase or pick-up becomes difficult. Thought to occur. However, when focusing on only the adhesive force X of the dicing film and controlling it, there are cases where it is not possible to control both chip fly and generation of residue. The inventors of the present invention have conducted further studies and speculated that the Young's modulus of the dicing film affects the magnitude of vibration during dicing, and the magnitude of this vibration is related to chip fly, and the adhesive force X It was found that not only can each of the Young's modulus Y and the Young's modulus Y be controlled independently, but also chip fly and residue can be reduced when the adhesive force X and the Young's modulus Y have a specific relationship. It is a thing.

In the dicing film according to this embodiment, the tensile stress at 100% elongation at room temperature of 25° C. is preferably 1 to 30 MPa, more preferably 3 to 25 MPa, and further preferably 5 to 20 MPa. Particularly preferred. By setting the tensile stress at 100% elongation within the above numerical range, the wafer support during dicing and the workability of the pickup are improved.

The dicing film preferably comprises a base material and an adhesive layer. The adhesive layer has a function of adhering the dicing die bonding film and the dicing die bonding film side (dicing film side) of the wafer structure to a dicing jig such as a wafer ring during dicing. That is, it is preferable that the adhesive layer is formed on one side of the substrate and the die bonding film is formed on the other side.

In the present embodiment, the material and thickness of the dicing film, especially the base material of the dicing film, so that the dicing film satisfies the relationship expressed by the above formula (1) between the adhesive force X of the dicing film and the Young's modulus Y. It is necessary to appropriately select the material and thickness, and the type, amount and thickness of the adhesive layer and the compounding. Hereinafter, the base material and the pressure-sensitive adhesive layer constituting the dicing film according to this embodiment will be described.

<Substrate>

The base material is not particularly limited as long as it is known as a material used for a dicing film, and examples thereof include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene. Polyethylene, random copolymer polypropylene, block copolymer polypropylene, polypropylene such as homopolyprolene, polyolefin resin such as polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, ethylene-vinyl acetate copolymer, zinc ion crosslinked product , Ionomer such as sodium ion crosslinked product, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer Polymers, olefinic copolymers such as ethylene-hexene copolymers, polyester resins such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, polyurethane, polyimide, polyamide, polyether ether ketone Polyether ketone, polyether sulfone, polystyrene, fluororesin, silicone resin, cellulose resin, styrene thermoplastic elastomer, olefin thermoplastic elastomer such as polypropylene thermoplastic elastomer, acrylic resin, polyester thermoplastic elastomer, polyvinyl A thermoplastic resin such as isoprene or polycarbonate, or a mixture of these thermoplastic resins is used, and a polyolefin resin is preferable.

The thickness of the base material may be, for example, 5 to 150 μm, and preferably 20 to 130 μm.
If the thickness is too thin, the chips may be scattered during dicing, and if it is too thick, defective pickup may occur.
In this embodiment, the Young's modulus of the dicing film can be adjusted by appropriately selecting the material and thickness of the base material.

The base material is preferably subjected to a mold release treatment on the side where the die bonding film is formed. Examples of the releasing treatment include a treatment of coating the surface of the film with a releasing agent and a treatment of making fine irregularities on the film surface. Examples of the release agent include silicone-based, alkyd-based, and fluorine-based release agents, and the treatment with a silicone-based release agent is particularly preferable because of its excellent pick-up property after dicing.

<Adhesive layer>
The adhesive layer has a function of adhering and supporting the semiconductor wafer when dicing the semiconductor wafer. The adhesive layer having such a function is composed of a resin composition containing a base resin having adhesiveness as a main material.

As such a base resin, acrylic resin (adhesive), silicone resin (adhesive), polyester resin (adhesive), polyvinyl acetate resin (adhesive), polyvinyl ether resin (adhesive) Alternatively, known materials used as an adhesive layer component such as urethane resin (adhesive) may be mentioned, and among them, acrylic resin is preferably used. An acrylic resin is preferably used as a base resin because it has excellent heat resistance and can be obtained relatively easily and inexpensively.
The pressure-sensitive adhesive layer may have a thickness of, for example, 0.5 to 50 μm, and preferably 1 to 30 μm.
The adhesive strength of the dicing film can be adjusted by properly selecting the type and amount of the adhesive layer and the thickness thereof.

The acrylic resin refers to one having a polymer (homopolymer or copolymer) containing a (meth)acrylic acid ester as a monomer main component as a base polymer.

The (meth)acrylic acid ester is not particularly limited, and examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, and butyl (meth)acrylate. , Isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, (meth) Octyl acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, (meth ) Undecyl acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, (meth) (Meth)acrylic acid alkyl ester such as octadecyl acrylate, (meth)acrylic acid cycloalkyl ester such as (meth)acrylic acid cyclohexyl, (meth)acrylic acid aryl ester such as phenyl (meth)acrylate, etc. Among these, one kind or a combination of two or more kinds can be used. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate. Is preferred. The (meth)acrylic acid alkyl ester is particularly excellent in heat resistance and can be obtained relatively easily and inexpensively.

In addition, in this specification, a (meth)acrylic acid ester shall be used with the meaning including both an acrylic acid ester and a methacrylic acid ester.

As the acrylic resin, a resin containing a copolymerizable monomer is used, if necessary, as a monomer component constituting a polymer for the purpose of modifying cohesive strength, heat resistance and the like.

Such a copolymerizable monomer is not particularly limited, but examples thereof include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and (meth). Hydroxyl group-containing monomers such as 6-hydroxyhexyl acrylate, epoxy group-containing monomers such as glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid, etc. Carboxyl group-containing monomers, maleic anhydride, acid anhydride group-containing monomers such as itaconic anhydride, (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol( Amide monomers such as (meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acrylamide, aminoethyl (meth)acrylate, (meth)acrylic acid Amino group-containing monomers such as N,N-dimethylaminoethyl, t-butylaminoethyl (meth)acrylate, cyano group-containing monomers such as (meth)acrylonitrile, ethylene, propylene, isoprene, butadiene, isobutylene, etc. Olefin monomers, styrene, α-methylstyrene, styrene monomers such as vinyltoluene, vinyl acetate, vinyl ester monomers such as vinyl propionate, vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether, vinyl chloride, chloride Halogen atom-containing monomer such as vinylidene, methoxyethyl (meth)acrylate, alkoxy group-containing monomer such as ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-(meth) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholine, and one or more of these can be used in combination.

The content of these copolymerizable monomers is preferably 40% by mass or less, and more preferably 10% by mass or less, based on all the monomer components constituting the acrylic resin.

The copolymerizable monomer may be contained in the end of the main chain of the polymer constituting the acrylic resin, or may be contained in the main chain, and further, the end of the main chain and the main chain. It may be included in both the inside and the inside.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of cross-linking polymers and the like.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate. , Pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester ( Examples thereof include (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyldi(meth)acrylate, and hexyldi(meth)acrylate, and one or more of these can be used in combination.

Further, ethylene-vinyl acetate copolymer, vinyl acetate polymer and the like can also be used as the copolymerizable monomer component.

In addition, such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Further, the polymerization of these monomer components can be carried out using a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, a suspension polymerization method or the like.

As the acrylic resin obtained by polymerizing the monomer components described above, an acrylic resin having a carbon-carbon double bond in a side chain, a main chain, or an end of the main chain (“double It may be referred to as a "bond-introducing acrylic resin"). When the acrylic resin is a double bond-introducing acrylic resin, the resulting pressure-sensitive adhesive layer should function as the above-mentioned pressure-sensitive adhesive layer even if the addition of a curable resin described later is omitted. You can

Such a double bond-introducing acrylic resin has one carbon-carbon double bond in each side chain of 1/100 or more of the side chains in the polymer constituting the acrylic resin. A double bond-introducing acrylic resin (also referred to as “double bond side chain-introducing acrylic resin”) is preferable. Thus, introducing a carbon-carbon double bond into the side chain of an acrylic resin is advantageous from the viewpoint of molecular design. The double bond side chain-introducing acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

The adhesive layer, in addition to the base resin having adhesiveness, curable resin photopolymerization initiator cross-linking agent antistatic agent, tackifier, antioxidant, adhesion modifier, filler, colorant, flame retardant, softener At least one of an antioxidant, a plasticizer, a surfactant and the like may be contained.

(Thermosetting die bonding film)
The dicing die bonding film of this embodiment comprises a thermosetting conductive die bonding film.

The thermosetting conductive die bonding film according to the present embodiment has a thermal conductivity of 0.1 to 20 W/mK, preferably 0.3 to 15 W/mK in the film thickness direction of the cured product. It is particularly preferably 0.5 to 12 W/mK.
The thermal conductivity of the cured product in the film thickness direction can be measured using the laser flash method.

In addition, the thermosetting conductive die bonding film according to the present embodiment preferably has a volume resistance of the cured product of 5.0×10 ^{−3 to} 1.0×10 ⁻⁵ Ωcm, and 1.0× More preferably, it is 10 ^{−3 to} 8.0×10 ⁻⁵ Ωcm.

The thermosetting conductive die bonding film according to the present embodiment can be obtained by forming the thermosetting resin composition into a film. Further, the thermosetting conductive die bonding film according to the present embodiment can be formed of a thermosetting resin composition containing conductive particles and a thermosetting resin. With such a configuration, the thermosetting conductive die-bonding film according to the present embodiment can be a thermosetting conductive die-bonding film having both heat dissipation characteristics, conductivity, and mechanical characteristics. The thermosetting resin composition according to this embodiment will be described below.

(Thermosetting resin)
The thermosetting resin composition of the present embodiment may include a thermosetting resin. The thermosetting resin composition of this embodiment may include at least one of an acrylic resin and an epoxy resin. The thermosetting resin composition of this embodiment preferably contains at least an acrylic resin. By including these resins, a thermosetting conductive die bonding film having excellent curability and storability, and heat resistance, moisture resistance, and chemical resistance of the cured product can be obtained.

When the thermosetting resin includes an acrylic resin, the thermosetting resin may include a polyfunctional (meth)acrylate having a cyclic structure having two or more (meth)acryloyl groups. This polyfunctional (meth)acrylate can have an isocyanurate ring structure in which the substituent on the nitrogen is a (meth)acryloyl group. A monomer can be used as the polyfunctional (meth)acrylate.

The polyfunctional (meth)acrylate may include, for example, a compound represented by the following general formula (a1-1).

In the above formula (a1-1), R ¹ , R ² , and R ³ are each independently a hydrogen atom or an organic group having no aromatic ring, and at least two of R ¹ , R ² , and R ³ are ( An organic group having a (meth)acrylic group and not having an aromatic ring. As the organic group of R ¹ , R ² and R ³ , for example, a (meth)acryloyl group, a lactone modified (meth)acryloyl group, a polyalkylene glycol (meth)acryloyl group are preferable, and a (meth)acryloyl group and a lactone modified ( A (meth)acryloyl group is more preferable, and a (meth)acrylic group is particularly preferable.

At least two of R ¹ , R ² and R ³ are organic groups having a (meth)acrylic group and not an aromatic ring, and all of R ¹ , R ² and R ³ are (meth)acrylic groups. It is preferable that the organic group has an aromatic ring.

In addition, as the polyfunctional (meth)acrylate, for example, a trifunctional (meth)acrylate, which is an organic group having a (meth)acrylic group for each of R ¹ , R ² , and R ³ and having no aromatic ring, is used. be able to.

Examples of such a polyfunctional (meth)acrylate having a (meth)acrylic group as a substituent on the nitrogen of the isocyanurate ring include (tris(2-hydroxyethyl)isocyanurate triacrylate (ethoxylated isocyanuric acid triacrylate). ), di(2-acryloyloxyethyl) isocyanurate, ε-caprolactone-modified tris(2-acryloyloxyethyl) isocyanurate, and the like, but are not limited thereto and include 2-hydroxyethyl isocyanurate and isocyanuric acid. (Meth)acrylic acid or (meth)acrylic acid halide condensation reaction introduced compound (meth), hydroxyl group of 2-hydroxyethyl isocyanurate and polyalkylene glycol, polyester glycol at the end of the compound ( Examples thereof include compounds in which a (meth)acrylic group is introduced by a condensation reaction of (meth)acrylic acid or a (meth)acrylic acid halide.

Specific examples of the polyfunctional (meth)acrylate include tris(2-hydroxyethyl)isocyanurate triacrylate (ethoxylated isocyanuric acid triacrylate), pentaerythritol triacrylate hexamethylene diisocyanate urethane prepolymer, pentaerythritol triacrylate isophorone. Diisocyanate urethane prepolymer, dipentaerythritol pentaacrylate hexamethylene diisocyanate urethane prepolymer, ε-caprolactone modified tris(2-acryloyloxyethyl) isocyanurate, tris(2-acryloyloxyethyl) isocyanurate, di(2-acryloyloxyethyl) ) Isocyanurate can be used. Preferably, tris(2-hydroxyethyl)isocyanurate triacrylate (ethoxylated isocyanuric acid triacrylate) and ε-caprolactone-modified tris(2-acryloyloxyethyl)isocyanurate can be used. When these are used, the glass transition temperature can be increased.

In the present embodiment, the thermosetting resin may include other thermosetting resins in addition to the polyfunctional (meth)acrylate. As the other thermosetting resin, known ones can be used, and are not particularly limited, for example, curability and storage stability, heat resistance of the cured product, moisture resistance, from the viewpoint of excellent chemical resistance, Allyl resins can be used. This allyl resin and the above polyfunctional (meth)acrylate can be used in combination.

In the present specification, the (meth)acrylate resin may include a (meth)acrylate group-containing polymer and a (meth)acrylate monomer. Having a (meth)acrylic group means having one or more acrylic groups and/or having one or more methacrylic groups. Having a (meth)acryloyl group means having one or more acryloyl groups and/or having one or more methacryloyl groups.

As the above allyl resin, an allyl resin containing two or more allyl groups can be used. As the allyl resin containing two or more allyl groups, for example, diallyl phthalate resin can be used.

Examples of the diallyl phthalate resin are represented by diallyl phthalate resins such as diallyl orthophthalate prepolymers, diallyl isophthalate prepolymers and diallyl terephthalate prepolymers, which may be used alone or as a mixture of two or more kinds. This makes it possible to adjust the curability, increase the elastic modulus and strength of the film, and improve the releasability from the carrier film. The diallyl phthalate resin may be a prepolymer composed of a copolymer of two or more so-called diallyl phthalate monomers such as diallyl orthophthalate monomer, diallyl isophthalate monomer and diallyl terephthalate monomer. In this case, the hydrogen atom on the benzene ring may be replaced by a halogen atom such as chlorine or bromine, and the unsaturated bond present in the molecule may be a hydrogenated prepolymer in whole or in part. Shall be included. In this embodiment, a monomer can be used as the diallyl phthalate resin.

The lower limit of the content of the thermosetting resin is, for example, 5% by mass or more, preferably 8% by mass or more, and more preferably 10% by mass or more, based on the entire thermosetting resin composition. Is. Thereby, heat resistance and mechanical properties can be improved. On the other hand, the lower limit of the content of the thermosetting resin is, for example, 20% by mass or less, preferably 18% by mass or less, and more preferably 15% by mass, based on the entire thermosetting resin composition. It is not more than mass %. This makes it possible to balance the heat dissipation characteristics and the mechanical characteristics.

The lower limit of the content of the polyfunctional (meth)acrylate is, for example, 10% by mass or more, preferably 30% by mass or more, and more preferably 50% by mass or more, based on the entire thermosetting resin. Is. Thereby, in the cured product of the thermosetting resin composition, the adhesion strength to the semiconductor element can be enhanced before and after moisture absorption. On the other hand, the lower limit of the content of the thermosetting resin is, for example, 100% by mass or less, preferably 90% by mass or less, and more preferably 80% by mass with respect to the entire thermosetting resin. It may be the following. This makes it possible to balance various properties of the cured product such as curability.

When the thermosetting resin contains an epoxy resin, examples of the epoxy resin include glycidyl ether type, glycidyl amine type, glycidyl ester type, and cycloaliphatic type epoxy resins. Specific examples include trisphenol methane type epoxy resin; hydrogenated bisphenol A type liquid epoxy resin; bisphenol F type liquid epoxy resin such as bisphenol-F-diglycidyl ether; orthocresol novolac type epoxy resin. As the epoxy resin, one kind or a combination of two or more kinds among the above specific examples can be used.

In the present embodiment, the content based on the entire resin composition refers to the content based on the entire solid content of the resin composition excluding the solvent, when the solvent is included. The “solid content of the resin composition” refers to the non-volatile content in the resin composition, and refers to the balance after removing volatile components such as water and solvent.

(Conductive particles)
The thermosetting resin composition of the present embodiment may contain conductive particles.

As the conductive particles, known materials can be used as long as they are particulate materials having conductivity. For example, one or more metals selected from the group consisting of silver, copper, palladium and nickel can be used. It can include structured particles. These may be used alone or in combination of two or more.

The conductive particles may be, for example, metal particles made of a metal, or may be metal-coated resin particles obtained by coating resin particles with a metal. The conductive particles may contain a metal other than the above metals.

The lower limit value of the average particle diameter D ₅₀ of the conductive particles may be, for example, 0.1 μm or more, preferably 0.3 μm or more, and more preferably 0.5 μm or more. Thereby, the thermal conductivity and conductivity of the cured product can be improved. On the other hand, the upper limit value of the average particle diameter D ₅₀ of the conductive particles may be, for example, 25 μm or less, preferably 20 μm or less, and more preferably 10 μm or less. This makes it possible to enhance the base material releasability of the film-shaped thermosetting resin composition and the adhesion of the cured product to the semiconductor element.
The average particle size of the conductive particles can be measured by, for example, a laser diffraction scattering method, a dynamic light scattering method, or the like.

Examples of the shape of the conductive particles of this embodiment include flake shape and spherical shape.

The content of the conductive particles is, for example, preferably 50% by mass or more, and more preferably 60% by mass or more, based on the entire thermosetting resin composition. Thereby, the thermal conductivity and conductivity of the cured product can be improved. On the other hand, the upper limit of the content of the conductive particles is, for example, 88 mass% or less, preferably 83 mass% or less, and more preferably 80 mass% with respect to the entire thermosetting resin composition. It is as follows. This makes it possible to enhance the base material releasability of the film-shaped thermosetting resin composition and the adhesion of the cured product to the semiconductor element.

The thermosetting resin composition of the present embodiment may contain other inorganic particles or organic particles in addition to the conductive particles. At this time, the content of the conductive particles is, for example, 80% by mass or more, 90% by mass or more, 95% by mass or more, and 100% by mass or less, based on 100% by mass of the entire particles. But it's okay.

(Thermoplastic resin)
The thermosetting resin composition of the present embodiment may further include a thermoplastic resin.

Examples of the thermoplastic resin include (meth)acrylic resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene. Copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, poly It may contain one or more selected from vinyl acetate and nylon. Among these, the thermoplastic resin may include, for example, at least one selected from the group consisting of (meth)acrylic resins and polyimide resins. The thermoplastic resin may have an epoxy group, a (meth)acrylic group, a carboxyl group, and a phenolic hydroxyl group in its structure.

In the present specification, the "(meth)acrylic resin" means a polymer of (meth)acrylic acid; a polymer of a derivative of (meth)acrylic acid; a copolymerization of (meth)acrylic acid and other monomers. Or a copolymer of a derivative of (meth)acrylic acid and another monomer. Further, “(meth)acrylic acid” means “acrylic acid” or “methacrylic acid”. Moreover, the (meth)acrylic resin may have a functional group that reacts with the thermosetting resin, such as an epoxy group or a (meth)acrylic group.

The (meth)acrylic resin may include, for example, an acrylic ester copolymer. Examples of the acrylic acid ester copolymer include a copolymer containing at least one of acrylic acid, acrylic acid ester, methacrylic acid ester and acrylonitrile as a monomer component. Among these, an acrylate copolymer having a compound having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group or the like as a functional group is preferable. Thereby, the adhesiveness to the adherend such as a semiconductor element can be further improved.

Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxymethacrylate having a hydroxyl group, carboxymethacrylate having a carboxyl group, and acrylonitrile having a nitrile group.

The weight average molecular weight of the acrylic acid ester copolymer is not particularly limited, but is preferably 100,000 or more, and particularly preferably 150,000 or more and 1,000,000 or less. When the weight average molecular weight is within this range, the film forming properties of the adhesive film for a semiconductor can be improved.

The glass transition temperature of the acrylic acid ester copolymer is, for example, -20 to 120°C, more preferably -20 to 60°C, and particularly preferably -10 to 50°C. If the glass transition temperature is too low, the adhesive force of the film-like adhesive layer becomes strong, which may cause pick-up failure or lower workability. If the glass transition temperature is too high, chipping or cracks may occur, or the effect of improving low temperature adhesiveness may decrease.

Content of the said thermoplastic resin is 1 mass% or more and 20 mass% or less with respect to the whole thermosetting resin composition, Preferably it is 3 mass% or more and 15 mass% or less, More preferably, It is preferably 5% by mass or more and 10% by mass or less. This makes it possible to balance the adhesion of the cured product to the semiconductor element and other physical properties.

(Coupling agent)
The thermosetting resin composition of this embodiment may further include a coupling agent.

This can enhance the dispersibility of the conductive particles in the film-shaped thermosetting resin composition. Further, the adhesion between the film-shaped thermosetting resin composition and the adherend can be enhanced.

As the above-mentioned coupling agent, for example, various silane compounds such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, ureidosilane, vinylsilane and methacrylsilane, titanium compounds, aluminum chelates, aluminum/zirconium compounds, etc. are known. A coupling agent can be used. Among these, a coupling agent having a (meth)acrylic group such as methacrylsilane can be used. Thereby, the compatibility between the acrylic compound such as polyfunctional (meth)acrylate and the conductive particles can be increased.

The amount of the coupling agent is, for example, preferably 0.01% by mass or more and 10% by mass or less, more preferably 0.05% by mass or more and 5% by mass or less, based on the entire thermosetting resin composition. %, and more preferably 0.1% by mass or more and 2% by mass or less.

The thermosetting resin composition of the present embodiment may contain a peroxide as a polymerization initiator depending on the purpose. On the other hand, the thermosetting resin composition may not contain a polymerization initiator such as a peroxide. This makes it possible to suppress the curing reaction in the low temperature region and improve the adhesion of the cured product to the semiconductor element before and after moisture absorption.

Further, the thermosetting resin composition of the present embodiment can be configured not to include a monomer having an epoxy group. This makes it possible to suppress the curing reaction in the low temperature region, improve the adhesion of the cured product to the semiconductor element, and improve the base releasability.

Further, the thermosetting resin composition of the present embodiment can be configured not to include a curing accelerator. Examples of the curing accelerator include, as an epoxy-based composition component, for example, those capable of promoting the polymerization reaction of an epoxy compound. This makes it possible to suppress the curing reaction in the low temperature region, improve the adhesion of the cured product to the semiconductor element, and improve the base releasability.

The thermosetting resin composition of the present embodiment can include components other than the components described above. Other components include, for example, slip agents (leveling agents), dispersants, polymerization inhibitors, penetration promoters, wetting agents (moisturizers), fixing agents, antifungal agents, preservatives, antioxidants, chelating agents. , Thickeners and defoamers.

In the present embodiment, the thermosetting resin composition can be prepared by mixing or dispersing the above components. The method of mixing and dispersing each component is not particularly limited, and they can be mixed or dispersed by a conventionally known method. More specifically, for example, the above-mentioned thermosetting resin composition may be prepared in a liquid state by mixing the above components in a solvent or without a solvent. The solvent used at this time is inactive with respect to each component. Specifically, the solvent includes, for example, ketones such as acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, and diacetone alcohol (DAA); benzene, xylene, and Aromatic hydrocarbons such as toluene; alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol, and n-butyl alcohol; cellosolves such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, and ethyl cellosolve acetate; N -Methyl-2-pyrrolidone (NMP); tetrahydrofuran (THF); dimethylformamide (DMF); dibasic acid ester (DBE); ethyl 3-ethoxypropionate (EEP); and one selected from dimethyl carbonate (DMC) Or includes two or more. The content of the solvent can be such that the solid content concentration of the thermosetting resin composition is, for example, 10% by mass to 80% by mass.

In the present embodiment, the thermosetting resin composition in the form of a film can be used as the thermosetting conductive die bonding film in the dicing die bonding film including the thermosetting conductive die bonding film. The thermosetting conductive die bonding film can be obtained, for example, by applying a resin varnish of a thermosetting resin composition on a dicing film, drying it at a predetermined temperature, and volatilizing the solvent. The thermosetting conductive die bonding film can be in the B stage state (uncured state or semi-cured state) instead of the C stage state.

In the step of forming a thermosetting conductive die bonding film on the dicing film, for example, the thermosetting resin composition is dissolved and dispersed in a solvent to prepare a resin varnish, and various coater devices are used. Examples thereof include a method in which the resin varnish is applied to the carrier substrate and then dried, and a method in which the resin varnish is spray-coated onto the carrier substrate using a spray device and then dried. Among these, a method of coating the resin varnish on the carrier substrate using various coater devices such as a spin coater, a comma coater, and a die coater and then drying this is preferable.
The dicing die bonding film thus obtained can be used as a die attach film with a dicing sheet function in the manufacture of electronic devices as described above.
It should be noted that the present invention is not limited to the above-described embodiment, and modifications, improvements, etc. within the scope of achieving the object of the present invention are included in the present invention.

Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to the description of these examples.

[Preparation of thermosetting resin composition]
For each example and each comparative example, a varnish-like thermosetting resin composition (resin varnish 1) for forming a thermosetting die bonding film was prepared. Each component was dissolved in methyl ethyl ketone (MEK) at a solid content ratio shown in Table 1 to obtain a resin varnish having a nonvolatile content (resin solid content) of 59%.

The details of the components shown in Table 1 are as follows. Moreover, the compounding ratio of each component in Table 1 has shown the compounding ratio (mass part) of each component with respect to the whole solid of a thermosetting resin composition.

The details of the raw materials for each component in Table 1 are as follows.
(Conductive particles)
Silver particles 1: Silver powder (manufactured by Tokuriki Head Office Co., Ltd., TKR4A, flakes, average particle size (D ₅₀ ): 9 μm)
(Thermosetting resin)
Polyfunctional (meth)acrylate 1: Tris(2-hydroxyethyl)isocyanurate triacrylate represented by the following formula (SR-368 manufactured by Sartomer Co.)

Diallyl phthalate resin 1: Tricyclodecane dimethanol diacrylate represented by the following formula (DCP-A manufactured by Shin-Nakamura Chemical Co., Ltd.).

(Thermoplastic resin)
Thermoplastic resin 1: acrylic acid ester-based copolymer solution (manufactured by Nagase Chemtex, Teisan resin SG-P3, epoxy group-containing ethyl acrylate-butyl acrylate-acrylonitrile copolymer, specific gravity 0.85, weight average) (Molecular weight 850,000, epoxy value 210 eq./g, glass transition temperature 12° C., rubber content 15% by mass, solvent: methyl ethyl ketone)

(Coupling agent)
Coupling agent 1: 3-methacryloxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-503)

(Example 1)
<Base film for dicing film>
The following was used as a dicing film.
Sumitomo Bakelite Co., Ltd. adhesive tape for dicing tape process, N4605
(Dicing film base material: PO, thickness: 110 μm, adhesive layer material: acrylic resin, thickness: 10 μm)

<Production of dicing die bonding film>
A thermosetting conductive die-bonding film forming resin varnish 1 is applied to the pressure-sensitive adhesive layer side of the dicing film using a comma coater and dried at 70° C. for 10 minutes to obtain the dicing film and the thermosetting conductive material. A dicing die bonding film which is a laminate with the die bonding film was obtained. The thickness of the thermosetting conductive die bonding film in the dicing die bonding film was 25 μm.

Subsequently, a PET film was attached as a protective film (cover film) to the obtained thermosetting conductive die bonding film with a dicing film, and the dicing film and the thermosetting conductive die bonding film were half-cut to form a protective film. Was peeled off to obtain a dicing die bonding film in which the dicing film and the film adhesive layer were laminated in this order.

(Example 2)
A dicing die bonding film was obtained by laminating a dicing film and a film adhesive layer in this order in the same manner as in Example 1 except that the following dicing film was used.
Sumitomo Bakelite Co., Ltd. adhesive tape for dicing tape process, N6001
(Dicing film base material: PVC, thickness: 90 μm, adhesive layer material: acrylic resin, thickness: 10 μm)

(Example 3)
A dicing die bonding film was obtained by laminating a dicing film and a film adhesive layer in this order in the same manner as in Example 1 except that the following dicing film was used.
Sumitomo Bakelite Co., Ltd. Adhesive tape for dicing tape process, N6300
(Dicing film base material: PO, thickness: 85 μm, adhesive layer material: acrylic resin, thickness: 5 μm)

(Example 4)
A dicing die bonding film was obtained by laminating a dicing film and a film adhesive layer in this order in the same manner as in Example 1 except that the following dicing film was used.
Sumitomo Bakelite Co., Ltd. adhesive tape for dicing tape process, N8500
(Dicing film base material: PO, thickness: 90 μm adhesive layer material: acrylic resin, thickness: 10 μm)

(Comparative Example 1)
A dicing die bonding film was obtained by laminating a dicing film and a film adhesive layer in this order in the same manner as in Example 1 except that the following dicing film was used.
Sumitomo Bakelite Co., Ltd. dicing tape process adhesive tape, N8801
(Dicing film base material: PO, thickness: 85 μm adhesive layer material: acrylic resin, thickness: 10 μm)

(Comparative example 2)
A dicing die bonding film was obtained by laminating a dicing film and a film adhesive layer in this order in the same manner as in Example 1 except that the following dicing film was used.
Sumitomo Bakelite Co., Ltd. adhesive tape for dicing tape process, N8800
(Dicing film base material: PO, thickness: 85 μm adhesive layer material: acrylic resin, thickness: 10 μm)

(Manufacturing of semiconductor devices)
The die-bonding film of the obtained dicing die-bonding film of each of the examples and comparative examples was attached to the back surface of the wafer (size: 8 inches, thickness: 550 μm, silicon wafer) at 60° C., and the wafer with the dicing die-bonding film was attached. Got Thereafter, the wafer with the dicing die bonding film is diced (cut) into a size of 5 mm×5 mm square semiconductor element using a dicing saw at a spindle rotation speed of 30,000 rpm and a cutting speed of 50 mm/sec, and then dicing die bonding. The film was pushed up from the back surface of the film, peeled off between the dicing film and the thermosetting conductive die bonding film, and a semiconductor element to which the thermosetting conductive die bonding film was bonded was picked up. After that, the semiconductor element is pressure-bonded to the copper lead frame through the thermosetting conductive die bonding film at 100° C., 1 MPa for 1.0 second, die bonded, heated at 200° C. for 1 hour, and sealed with resin. Then, a semiconductor device was obtained.

The following evaluations were performed on the dicing film of each example and each comparative example, the laminate of the dicing film and the die bonding film, and the dicing die bonding film obtained in each example and each comparative example.

(Young's modulus of dicing film)
The dicing films of Examples and Comparative Examples were cut into a test width of 10 mm and a length of 120 mm, and the Young's modulus was measured based on JISK7161. For the measurement, a Tensilon universal tester (RTC-1250) manufactured by ORIONTEC was used, and the measurement conditions were a chuck distance of 80 mm and a pulling speed of 200 mm/min. The results are shown in Table 2.

(Measurement of adhesive force of a laminate of a dicing film and a die bonding film to a silicon mirror wafer)

The pressure-sensitive adhesive layer side of the 100 mm square dicing films of Examples and Comparative Examples was bonded to a wafer at 60° C. and 0.5 MPa for 20 seconds, and then left for 24 hours. Then, the film was cut into a width of 10 mm to obtain a test piece.

After standing for 24 hours, the laminate of the dicing film and the die bonding film was peeled off according to JIS Z0237 and the adhesive strength was measured. The peeling conditions were as follows: the angle θ between the surface of the adhesive layer and the surface of the silicon mirror wafer was 180°, the pulling speed was 300 mm/min, and room temperature (23° C.). The results are shown in Table 2.

(Thermal conductivity of the cured product of the thermosetting conductive die bonding film)
A sample was prepared by bonding silicon wafers on the upper and lower surfaces of the die bonding film. Then, the thermosetting conductive die bonding film was heat-treated at 175° C. for 30 minutes to obtain a cured product of the thermosetting conductive die bonding film. Then, the thermal conductivity in the thickness direction of the cured product of the thermosetting conductive die bonding film was measured using a laser flash method.
Specifically, from the thermal diffusion coefficient (α) measured by the laser flash method (half time method), the specific heat (Cp) measured by the DSC method, and the density (ρ) measured based on JIS-K-6911, the following formula Was used to calculate the thermal conductivity. The unit of thermal conductivity is W/(m·K). The measurement temperature is 25°C.
The thermal conductivity of the cured product of the thermosetting conductive die bonding film used in Examples and Comparative Examples was 1.2 W/mK.

(Volume resistivity)

A varnish-shaped thermosetting resin composition (resin varnish 1) for forming a thermosetting die-bonding film was applied on a glass epoxy resin substrate in a band shape of 1 cm width×10 cm length so that the thickness was 25 μm. In a nitrogen atmosphere having a residual oxygen concentration of less than 1000 ppm, the temperature was raised from 25° C. to 100° C. over 30 minutes, maintained at the temperature for 30 minutes, then increased to 200° C. over the period of 30 minutes, and then kept for 1 hour A cured product of the thermosetting conductive die bonding film was formed. The resistance value of the cured product of the obtained thermosetting conductive die bonding film was measured by the 4-terminal method, and the volume resistivity was calculated.
The thermosetting conductive die-bonding film used in Examples and Comparative Examples had a cured product volume resistivity of 4.4×10 ⁻⁴ Ω·cm.

(Tensile stress of dicing film)
The dicing film was cut into “dumbbell-shaped No. 3 type test pieces” according to JIS K6251 (2004) and used as test pieces.
The tensile stress of the obtained dumbbell-shaped No. 3 test piece at 100% elongation at room temperature of 25° C. was measured. The unit is MPa.
The tensile stress was evaluated in each of the MD direction and the TD direction of the dicing film. The results are shown in Table 2.

(Breaking strength of dicing film)
Using a dicing film, a crescent-type test piece was produced according to JIS K6252 (2001), and the tear strength of the obtained crescent-type test piece was measured. The unit is MPa.

(Dicing film breaking elongation)
Using a dicing film, a dumbbell-shaped No. 3 test piece was prepared according to JIS K6251 (2004), and the breaking elongation of the obtained dumbbell-shaped No. 3 test piece was measured. The breaking elongation was calculated by [movement distance between chucks (mm)]÷[distance between initial chucks (60 mm)]×100. The unit is %.

(Chip fly)
In the manufacturing process of the above semiconductor device, the presence or absence of chip fly when dicing under the above dicing conditions was observed and evaluated according to the following evaluation criteria. The evaluation results are shown in Table 2.
○ No chip jump was observed.
Δ Chip fly was observed, and the number was 0.2% or less.
× Chip fly was observed, and the number was more than 0.2%.

(Residue after pickup)
In the manufacturing process of the above semiconductor device, after the semiconductor element was picked up, it was observed whether or not the die bonding film remained on the dicing film, and the following evaluation criteria were evaluated.
◯: No dicing film remains on the die bond film after picking up Δ: The dicing film may remain on the die bond film after picking up, and the number was 0.2% or less.
X: The dicing film may remain on the die bond film after the pickup, and the number was more than 0.2%. The evaluation results are shown in Table 2.

Although the present invention has been specifically described based on the embodiments and examples, these are examples of the present invention, and various configurations other than the above can be adopted.

10 Dicing Film 11 Base Material 12 Adhesive Layer 20 Thermosetting Conductive Die Bonding Film 30 Cover Film 40 Wafer 50 Die 100 Dicing Die Bonding Film

Claims (7)

A dicing die bonding film comprising a dicing film and a thermosetting conductive die bonding film provided on the dicing film,
The cured product of the thermosetting conductive die bonding film has a thermal conductivity of 0.1 to 20 W/mK in the film thickness direction,
Young's modulus Y (MPa) of the dicing film at 25° C. measured according to JIS K 7161,
The 180 degree peeling adhesive force X (cN/25 mm) of the dicing film with respect to the surface of the silicon mirror wafer, measured according to JIS Z 0237,
A dicing die bonding film satisfying the following formula (1).
Formula (1) 300≦Y+0.5X≦600 The dicing die bonding film according to claim 1, wherein the tensile stress at 100% extension of the dicing film at 25°C is 1 to 30 MPa. The dicing die bonding film according to claim 1 or 2, wherein the thermosetting conductive die bonding film is formed of a thermosetting resin composition containing conductive particles and a thermosetting resin. The dicing die bonding film according to claim 1, wherein the thermosetting resin composition contains at least one of an acrylic resin and an epoxy resin. The dicing die bonding film according to claim 1, wherein the dicing film contains an acrylic resin. A method of manufacturing a semiconductor device using the dicing die bonding film according to claim 1,
On the semiconductor substrate, a bonding step of bonding so that the semiconductor substrate and the thermosetting conductive die bonding film side of the dicing die bonding film face each other,
A dicing step of obtaining a plurality of semiconductor chips by dicing the semiconductor substrate to which the dicing die bonding film is attached,
A pickup step of picking up at least one of the plurality of semiconductor chips;
A method of manufacturing a semiconductor device, comprising: The method of manufacturing a semiconductor device according to claim 6,
A method for manufacturing a semiconductor device, which does not have a radiation irradiation step of reducing the adhesive strength of the dicing film by curing by irradiation with radiation.

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